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High-order nonlinear terahertz probing of the two-band superconductor MgB$_2$: Third- and fifth-order harmonic generation
Authors:
C. Reinhoffer,
P. Pilch,
A. Reinold,
P. Derendorf,
S. Kovalev,
J. -C. Deinert,
I. Ilyakov,
A. Ponomaryov,
Min Chen,
Tie-Quan Xu,
Yue Wang,
Zi-Zhao Gan,
De-Sheng Wu,
Jian-Lin Luo,
S. Germanskiy,
E. A. Mashkovich,
P. H. M. van Loosdrecht,
I. M. Eremin,
Zhe Wang
Abstract:
We report on high-order harmonic generation in the two-band superconductor MgB$_2$ driven by intense terahertz electromagnetic pulses. Third- and fifth-order harmonics are resolved in time domain and investigated as a function of temperature and in applied magnetic fields crossing the superconducting phase boundary. The high-order harmonics in the superconducting phase reflects nonequilibrium dyna…
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We report on high-order harmonic generation in the two-band superconductor MgB$_2$ driven by intense terahertz electromagnetic pulses. Third- and fifth-order harmonics are resolved in time domain and investigated as a function of temperature and in applied magnetic fields crossing the superconducting phase boundary. The high-order harmonics in the superconducting phase reflects nonequilibrium dynamics of the superconducting order parameter in MgB$_2$, which is probed via nonlinear coupling to the terahertz field. The observed temperature and field dependence of the nonlinear response allows to establish the superconducting phase diagram.
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Submitted 16 December, 2022; v1 submitted 25 July, 2022;
originally announced July 2022.
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Terahertz signatures of ultrafast Dirac fermion relaxation at the surface of topological insulators at room temperature
Authors:
S. Kovalev,
K. -J. Tielrooij,
J. -C. Deinert,
I. Ilyakov,
N. Awari,
M. Chen,
A. Ponomaryov,
M. Bawatna,
T. V. A. G. de Oliveira,
L. M. Eng,
K. A. Kuznetsov,
G. Kh. Kitaeva,
P. I. Kuznetsov,
H. A. Hafez,
D. Turchinovich,
M. Gensch
Abstract:
Topologically-protected surface states present rich physics and promising spintronic, optoelectronic and photonic applications that require a proper understanding of their ultrafast carrier dynamics. Here, we investigate these dynamics in topological insulators (TIs) of the bismuth and antimony chalcogenide family, where we isolate the response of Dirac fermions at the surface from the response of…
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Topologically-protected surface states present rich physics and promising spintronic, optoelectronic and photonic applications that require a proper understanding of their ultrafast carrier dynamics. Here, we investigate these dynamics in topological insulators (TIs) of the bismuth and antimony chalcogenide family, where we isolate the response of Dirac fermions at the surface from the response of bulk carriers by combining photoexcitation with below-bandgap terahertz (THz) photons with TI samples with varying Fermi level, including one sample with the Fermi level located within the bandgap. We identify distinctly faster relaxation of charge carriers in the topologically-protected Dirac surface states (few hundred femtoseconds), compared to bulk carriers (few picoseconds). In agreement with such fast cooling dynamics, we observe THz harmonic generation without any saturation effects for increasing incident fields, unlike graphene which exhibits strong saturation. This opens up promising avenues for increased THz nonlinear conversion efficiencies, and high-bandwidth optoelectronic and spintronic information and communication applications.
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Submitted 1 March, 2021; v1 submitted 6 June, 2020;
originally announced June 2020.
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Uncovering the (un-)occupied electronic structure of a buried hybrid interface
Authors:
S. Vempati,
J. -C. Deinert,
L. Gierster,
L. Bogner,
C. Richter,
N. Mutz,
S. Blumstengel,
A. Zykov,
S. Kowarik,
Y. Garmshausen,
J. Hildebrandt,
S. Hecht,
J. Stähler
Abstract:
The energy level alignment at organic/inorganic (o/i) semiconductor interfaces is crucial for any light-emitting or -harvesting functionality. Essential is the access to both occupied and unoccupied electronic states directly at the interface, which is often deeply buried underneath thick organic films and challenging to characterize. We use several complementary experimental techniques to determi…
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The energy level alignment at organic/inorganic (o/i) semiconductor interfaces is crucial for any light-emitting or -harvesting functionality. Essential is the access to both occupied and unoccupied electronic states directly at the interface, which is often deeply buried underneath thick organic films and challenging to characterize. We use several complementary experimental techniques to determine the electronic structure of p-quinquephenyl pyridine (5P-Py) adsorbed on ZnO(10-10). The parent anchoring group, pyridine, significantly lowers the work function by up to 2.9 eV and causes an occupied in-gap state (IGS) directly below the Fermi level $E_\text{F}$. Adsorption of upright-standing 5P-Py also leads to a strong work function reduction of up to 2.1 eV and to a similar IGS. The latter is then used as an initial state for the transient population of three normally unoccupied molecular levels through optical excitation and, due to its localization right at the o/i interface, provides interfacial sensitivity, even for thick 5P-Py films. We observe two final states above the vacuum level and one bound state at around 2 eV above $E_\text{F}$, which we attribute to the 5P-Py LUMO. By the separate study of anchoring group and organic dye combined with the exploitation of the occupied IGS for selective interfacial photoexcitation this work provides a new pathway for characterizing the electronic structure at buried o/i interfaces.
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Submitted 2 November, 2018;
originally announced November 2018.
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Magnetic field dependence of antiferromagnetic resonance in NiO
Authors:
Zhe Wang,
S. Kovalev,
N. Awari,
Min Chen,
S. Germanskiy,
B. Green,
J. -C. Deinert,
T. Kampfrath,
J. Milano,
M. Gensch
Abstract:
We report on measurements of magnetic field and temperature dependence of antiferromagnetic resonances in the prototypical antiferromagnet NiO. The frequencies of the magnetic resonances in the vicinity of 1 THz have been determined in the time-domain via time-resolved Faraday measurements after selective excitation by narrow-band superradiant terahertz (THz) pulses at temperatures down to 3K and…
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We report on measurements of magnetic field and temperature dependence of antiferromagnetic resonances in the prototypical antiferromagnet NiO. The frequencies of the magnetic resonances in the vicinity of 1 THz have been determined in the time-domain via time-resolved Faraday measurements after selective excitation by narrow-band superradiant terahertz (THz) pulses at temperatures down to 3K and in magnetic fields up to 10 T. The measurements reveal two antiferromagnetic resonance modes, which can be distinguished by their characteristic magnetic field dependencies. The nature of the two modes is discussed by comparison to an eight-sublattice antiferromagnetic model, which includes superexchange between the next-nearest-neighbor Ni spins, magnetic dipolar interactions, cubic magneto-crystalline anisotropy, and Zeeman interaction with the external magnetic field. Our study indicates that a two-sublattice model is insufficient for the description of spin dynamics in NiO, while the magnetic-dipolar interactions and magneto-crystalline anisotropy play important roles.
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Submitted 20 June, 2018;
originally announced June 2018.
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Local Aspects of Hydrogen-Induced Metallization of the ZnO(10$\mathbf{\overline{1}}$0) Surface
Authors:
J. -C. Deinert,
O. T. Hofmann,
M. Meyer,
P. Rinke,
J. Stähler
Abstract:
This study combines surface-sensitive photoemission experiments with density functional theory (DFT) to give a microscopic description of H adsorption-induced modifications of the ZnO(10${\overline{1}}$0) surface electronic structure. We find a complex adsorption behavior caused by a strong coverage dependence of the H adsorption energies: Initially, O--H bond formation is energetically favorable…
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This study combines surface-sensitive photoemission experiments with density functional theory (DFT) to give a microscopic description of H adsorption-induced modifications of the ZnO(10${\overline{1}}$0) surface electronic structure. We find a complex adsorption behavior caused by a strong coverage dependence of the H adsorption energies: Initially, O--H bond formation is energetically favorable and H acting as an electron donor leads to the formation of a charge accumulation layer and to surface metallization. The increase of the number of O--H bonds leads to a reversal in adsorption energies such that Zn--H bonds become favored at sites close to existing O--H bonds, which results in a gradual extenuation of the metallization. The corresponding surface potential changes are localized within a few nanometers both laterally and normal to the surface. This localized character is experimentally corroborated by using sub-surface bound excitons at the ZnO(10${\overline{1}}$0) surface as a local probe. The pronounced and comparably localized effect of small amounts of hydrogen at this surface strongly suggests metallic character of ZnO surfaces under technologically relevant conditions and may, thus, be of high importance for energy level alignment at ZnO-based junctions in general.
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Submitted 22 June, 2015; v1 submitted 17 February, 2015;
originally announced February 2015.
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Ultrafast exciton formation at the ZnO(10${\overline{\textbf{1}}}$0) surface
Authors:
J. -C. Deinert,
D. Wegkamp,
M. Meyer,
C. Richter,
M. Wolf,
J. Stähler
Abstract:
We study the ultrafast quasiparticle dynamics in and below the ZnO conduction band using femtosecond time-resolved two-photon photoelectron spectroscopy. Above band gap excitation causes hot electron relaxation by electron-phonon scattering down to the Fermi level $E_\text{F}$ followed by ultrafast (200 fs) formation of a surface exciton (SX). Transient screening of the Coulomb interaction reduces…
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We study the ultrafast quasiparticle dynamics in and below the ZnO conduction band using femtosecond time-resolved two-photon photoelectron spectroscopy. Above band gap excitation causes hot electron relaxation by electron-phonon scattering down to the Fermi level $E_\text{F}$ followed by ultrafast (200 fs) formation of a surface exciton (SX). Transient screening of the Coulomb interaction reduces the SX formation probability at high excitation densities near the Mott limit. Located just below the surface, the SX are stable with regard to hydrogen-induced work function modifications and thus the ideal prerequisite for resonant energy transfer applications.
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Submitted 30 September, 2014;
originally announced September 2014.
