Showing 1–11 of 11 results for author: Defo, R K

Computing Using Shallow NV-Center Charges in Diamond

Authors: Rodrick Kuate Defo, Steven L. Richardson

Abstract: The static electric dipole-dipole coupling between donor-acceptor pairs (DAPs) in wide-bandgap semiconductors has recently emerged as a means of realizing a quantum science platform through optically controllable, long-range interactions between defects in the solid state. In this work, we generalize DAPs to consider arbitrary dopant populations and demonstrate that the charge of the NV center in… ▽ More The static electric dipole-dipole coupling between donor-acceptor pairs (DAPs) in wide-bandgap semiconductors has recently emerged as a means of realizing a quantum science platform through optically controllable, long-range interactions between defects in the solid state. In this work, we generalize DAPs to consider arbitrary dopant populations and demonstrate that the charge of the NV center in diamond is well suited for quantum science. Explicitly, we leverage experimental results [see Z. Yuan et al., PRR 2, 033263 (2020)] to show that shallow NV centers can be efficiently initialized to a given relative population of the negative and neutral charge states and that modulating the surface termination would allow for control of the timescale over which the initialization and subsequent computations would occur. Furthermore, we argue that the observation of electroluminescence from the neutral charge state of the NV center [see N. Mizuochi et al., Nat. Photon. 6, 299 (2012)], but not from the negative charge state, implies the ability to interface with the NV center's charge in a manner analogous to the spin interface enabled by the spin-state dependent fluorescence of the NV center. △ Less

Submitted 4 May, 2024; v1 submitted 26 February, 2024; originally announced February 2024.

Suppressing electromagnetic local density of states via slow light in lossy quasi-1d gratings

Authors: Benjamin Strekha, Pengning Chao, Rodrick Kuate Defo, Sean Molesky, Alejandro W. Rodriguez

Abstract: We propose a spectral-averaging procedure that enables computation of bandwidth-integrated local density of states (LDOS) from a single scattering calculation, and exploit it to investigate the minimum extinction achievable from dipolar sources over finite bandwidths in structured media. Structure-agnostic extinction bounds are derived, providing analytical insights into scaling laws and fundament… ▽ More We propose a spectral-averaging procedure that enables computation of bandwidth-integrated local density of states (LDOS) from a single scattering calculation, and exploit it to investigate the minimum extinction achievable from dipolar sources over finite bandwidths in structured media. Structure-agnostic extinction bounds are derived, providing analytical insights into scaling laws and fundamental design tradeoffs with implications to bandwidth and material selection. We find that perfect LDOS suppression over a finite bandwidth $Δω$ is impossible. Inspired by limits which predict nontrivial $\sqrt{Δω}$ scaling in systems with material dissipation, we show that pseudogap edge states of quasi-1d bullseye gratings can -- by simultaneously minimizing material absorption and radiation -- yield arbitrarily close to perfect LDOS suppression in the limit of vanishing bandwidth. △ Less

Submitted 4 March, 2024; v1 submitted 27 September, 2023; originally announced September 2023.

Charge-State Stability of Color Centers in Wide-Bandgap Semiconductors

Authors: Rodrick Kuate Defo, Alejandro W. Rodriguez, Steven L. Richardson

Abstract: The NV$^-$ color center in diamond has been extensively investigated for quantum sensing, computation, and communication applications. Nonetheless, charge-state decay from the NV$^-$ to its neutral counterpart the NV$^0$ detrimentally affects the robustness of the NV$^-$ center and remains to be fully overcome. In this work, we provide an $ab~initio$ formalism for accurately estimating the rate of… ▽ More The NV$^-$ color center in diamond has been extensively investigated for quantum sensing, computation, and communication applications. Nonetheless, charge-state decay from the NV$^-$ to its neutral counterpart the NV$^0$ detrimentally affects the robustness of the NV$^-$ center and remains to be fully overcome. In this work, we provide an $ab~initio$ formalism for accurately estimating the rate of charge-state decay of color centers in wide-bandgap semiconductors. Our formalism employs density functional theory calculations in the context of thermal equilibrium. We illustrate the method using the transition of NV$^-$ to NV$^0$ in the presence of substitutional N [see Z. Yuan $et~al$., PRR 2, 033263 (2020)]. △ Less

Submitted 20 December, 2023; v1 submitted 29 July, 2023; originally announced July 2023.

Theoretical Investigation of Charge Transfer Between Two Defects in a Wide-Bandgap Semiconductor

Authors: Rodrick Kuate Defo, Alejandro W. Rodriguez, Efthimios Kaxiras, Steven L. Richardson

Abstract: Charge traps in the semiconductor bulk (bulk charge traps) make it difficult to predict the electric field within wide-bandgap semiconductors. The issue is the daunting number of bulk charge-trap candidates which means the treatment of bulk charge traps is generally qualitative or uses generalized models that do not consider the trap's particular electronic structure. The electric field within a w… ▽ More Charge traps in the semiconductor bulk (bulk charge traps) make it difficult to predict the electric field within wide-bandgap semiconductors. The issue is the daunting number of bulk charge-trap candidates which means the treatment of bulk charge traps is generally qualitative or uses generalized models that do not consider the trap's particular electronic structure. The electric field within a wide-bandgap semiconductor is nonetheless a crucial quantity in determining the operation of semiconductor devices and the performance of solid-state single-photon emitters embedded within the semiconductor devices. In this work we accurately compute the average electric field measured at the location of N$V^-$ charged defects for the substitutional N (N$_\text{C}$) concentration of $n_{\text{N}_\text{C}} \approx 1.41\times10^{18}$ cm$^{-3}$ for the commonly used oxygen-terminated diamond (see [D. A. Broadway $et$ $al$., Nature Electronics 1, 502 (2018)]). We achieve this result by evaluating the leading-order contribution to the electric field far away from the surface, which comes from the N$_\text{C}$ defects that induce the ionization of the N$V^-$. Our results use density-functional theory (DFT) and the principle of band bending. Our work has the potential to aid both in the prediction of the functioning of semiconductor devices and in the prediction and correction of the spectral diffusion that often plagues the optical frequencies of solid-state single-photon emitters upon repeated photoexcitation measurements. Our results for the timescales involved in thermally driven charge transfer also have the potential to aid in investigations of charge dynamics. △ Less

Submitted 15 March, 2023; v1 submitted 14 December, 2022; originally announced December 2022.

Maximum Electromagnetic Local Density of States via Material Structuring

Authors: Pengning Chao, Rodrick Kuate Defo, Sean Molesky, Alejandro Rodriguez

Abstract: The electromagnetic local density of states (LDOS) is crucial to many aspects of photonics engineering, from enhancing emission of photon sources to radiative heat transfer and photovoltaics. We present a framework for evaluating upper bounds on LDOS in structured media that can handle arbitrary bandwidths and accounts for critical wave scattering effects with no heuristic approximations. The boun… ▽ More The electromagnetic local density of states (LDOS) is crucial to many aspects of photonics engineering, from enhancing emission of photon sources to radiative heat transfer and photovoltaics. We present a framework for evaluating upper bounds on LDOS in structured media that can handle arbitrary bandwidths and accounts for critical wave scattering effects with no heuristic approximations. The bounds are solely determined by the bandwidth, material susceptibility, and device footprint, with no assumptions on geometry. We derive an analytical expression for the maximum LDOS consistent with the conservation of energy across the entire design domain, which upon benchmarking with topology-optimized structures is shown to be nearly tight for large devices. Novel scaling laws for maximum LDOS enhancement are found: the bounds saturate to a finite value with increasing susceptibility and scale as the quartic root of the bandwidth for semi-infinite structures made of lossy materials, with direct implications on material selection and design applications. △ Less

Submitted 30 September, 2022; v1 submitted 18 September, 2022; originally announced September 2022.

Comments: Corrected minor typos throughout paper; corrected mislabel of inverse designs in Figure 1; added full Supplementary Information; added acknowledgments

Physical limits on electromagnetic response

Authors: Pengning Chao, Benjamin Strekha, Rodrick Kuate Defo, Sean Molesky, Alejandro W. Rodriguez

Abstract: Photonic devices play an increasingly important role in advancing physics and engineering, and while improvements in nanofabrication and computational methods have driven dramatic progress in expanding the range of achievable optical characteristics, they have also greatly increased design complexity. These developments have led to heightened relevance for the study of fundamental limits on optica… ▽ More Photonic devices play an increasingly important role in advancing physics and engineering, and while improvements in nanofabrication and computational methods have driven dramatic progress in expanding the range of achievable optical characteristics, they have also greatly increased design complexity. These developments have led to heightened relevance for the study of fundamental limits on optical response. Here, we review recent progress in our understanding of these limits with special focus on an emerging theoretical framework that combines computational optimization with conservation laws to yield physical limits capturing all relevant wave effects. Results pertaining to canonical electromagnetic problems such as thermal emission, scattering cross sections, Purcell enhancement, and power routing are presented. Finally, we identify areas for additional research, including conceptual extensions and efficient numerical schemes for handling large-scale problems. △ Less

Submitted 12 September, 2021; originally announced September 2021.

Comments: 22 pages, 8 figures

Calculating the Hyperfine Tensors for Group-IV Impurity-Vacancy Centers in Diamond: A Hybrid Density-Functional Theory Approach

Authors: Rodrick Kuate Defo, Efthimios Kaxiras, Steven L. Richardson

Abstract: The hyperfine interaction is an important probe for understanding the structure and symmetry of defects in a semiconductor. Density-functional theory has shown that it can provide useful first-principles predictions for both the hyperfine tensor and the hyperfine constants that arise from it. Recently there has been great interest in using group-IV impurity-vacancy color centers X$V^-$ (where X =… ▽ More The hyperfine interaction is an important probe for understanding the structure and symmetry of defects in a semiconductor. Density-functional theory has shown that it can provide useful first-principles predictions for both the hyperfine tensor and the hyperfine constants that arise from it. Recently there has been great interest in using group-IV impurity-vacancy color centers X$V^-$ (where X = Si, Ge, Sn, or Pb and $V$ is a carbon vacancy) for important applications in quantum computing and quantum information science. In this paper, we have calculated the hyperfine tensors for these X$V^-$ color centers using the HSE06 screened Hartree-Fock hybrid exchange-correlation functional with the inclusion of core electron spin polarization. We have compared our results to calculations which only use the PBE exchange-correlation functional without the inclusion of core electron spin polarization and we have found our results are in very good agreement with available experimental results. Finally, we have theoretically shown that these X$V^-$ color centers exhibit a Jahn-Teller distortion which explains the observed anisotropic distribution of the hyperfine constants among the neighboring $^{13}$C nuclear spins. △ Less

Submitted 30 May, 2021; originally announced May 2021.

Journal ref: Phys. Rev. B 104, 075158 (2021)

Methods to Accelerate High-Throughput Screening of Atomic Qubit Candidates in van der Waals Materials

Authors: R. Kuate Defo, H. Nguyen, M. J. H. Ku, T. D. Rhone

Abstract: The discovery of atom-like spin emitters associated with defects in two-dimensional (2D) wide-bandgap (WBG) semiconductors presents new opportunities for highly tunable and versatile qubits. So far, the study of such spin emitters has focused on defects in hexagonal boron nitride (hBN). However, hBN necessarily contains a high density of nuclear spins, which are expected to create a strong incoher… ▽ More The discovery of atom-like spin emitters associated with defects in two-dimensional (2D) wide-bandgap (WBG) semiconductors presents new opportunities for highly tunable and versatile qubits. So far, the study of such spin emitters has focused on defects in hexagonal boron nitride (hBN). However, hBN necessarily contains a high density of nuclear spins, which are expected to create a strong incoherent spin-bath that leads to poor coherence properties of spins hosted in the material. Therefore, identification of new qubit candidates in other 2DWBG materials is necessary. Given time demands of $ab~initio$ methods, new approaches for rapid screening and calculation of identifying properties of suitable atom-like qubits are required. In this work, we present two new methods for rapid estimation of the zero-phonon line (ZPL), a key property of atomic qubits in WBG materials. First, this ZPL is calculated by exploiting Janak's theorem. For finite changes in occupation, we provide the leading-order estimate of the correction to the ZPL obtained using Janak's theorem, which is more rapid than the standard method ($Δ$SCF). Next, we also demonstrate an approach to converging excited states that is faster for systems with small strain than the standard approach used in the $Δ$SCF method. We illustrate these methods using the case of the singly negatively charged calcium vacancy in SiS$_2$, which we are the first to propose as a qubit candidate. This work has the potential to assist in accelerating the high-throughput search for quantum defects in materials, with applications in quantum sensing and quantum computing. △ Less

Submitted 11 June, 2021; v1 submitted 2 December, 2020; originally announced December 2020.

Enhanced cavity coupling to silicon monovacancies in 4-H Silicon Carbide using below bandgap laser irradiation and low temperature thermal annealing

Authors: Mena N. Gadalla, Andrew S. Greenspon, Rodrick Kuate Defo, Xingyu Zhang, Evelyn L. Hu

Abstract: The negatively charged silicon monovacancy $V_{Si}^-$ in 4H-silicon carbide (SiC) is a spin-active point defect that has the potential to act as a qubit or quantum memory in solid-state quantum computation applications. Photonic crystal cavities (PCCs) can augment the optical emission of the $V_{Si}^-$, yet fine-tuning the defect-cavity interaction remains challenging. We report on two post-fabric… ▽ More The negatively charged silicon monovacancy $V_{Si}^-$ in 4H-silicon carbide (SiC) is a spin-active point defect that has the potential to act as a qubit or quantum memory in solid-state quantum computation applications. Photonic crystal cavities (PCCs) can augment the optical emission of the $V_{Si}^-$, yet fine-tuning the defect-cavity interaction remains challenging. We report on two post-fabrication processes that result in enhancement of the $V_1^{'}$ optical emission from our 1-dimensional PCCs, indicating improved coupling between the ensemble of silicon vacancies and the PCC. One process involves below bandgap illumination at 785 nm and 532 nm wavelengths and above bandgap illumination at 325 nm, carried out at times ranging from a few minutes to several hours. The other process is thermal annealing at $100^o C$, carried out over 20 minutes. Every process except above bandgap irradiation improves the defect-cavity coupling, manifested in augmented Purcell factor enhancement of the $V_1^{'}$ zero phonon line at 77K. The below bandgap laser process is attributed to a modification of charge states, changing the relative ratio of $V_{Si}^0$ (dark state) to $V_{Si}^-$ (bright state), while the thermal annealing process may be explained by diffusion of carbon interstitials, $C_i$, that subsequently recombine with other defects to create additional $V_{Si}^-$s. Above bandgap radiation is proposed to initially convert $V_{Si}^{0}$ to $V_{Si}^-$, but also may lead to diffusion of $V_{Si}^-$ away from the probe area, resulting in an irreversible reduction of the optical signal. Observations of the PCC spectra allow insights into defect modifications and interactions within a controlled, designated volume and indicate pathways to improve defect-cavity interactions. △ Less

Submitted 23 September, 2020; v1 submitted 25 August, 2020; originally announced August 2020.

Comments: 21 pages, 8 figures

How carbon vacancies can affect the properties of group IV color centers in diamond: A study of thermodynamics and kinetics

Authors: Rodrick Kuate Defo, Efthimios Kaxiras, Steven L. Richardson

Abstract: Recently there has been much interest in using Group IV elements from the Periodic Table to fabricate and study X$V$ color centers in diamond where X = Si, Ge, Sn, or Pb and $V$ is a carbon vacancy. These Group IV color centers have a number of interesting spin and optical properties which could potentially make them better candidates than N$V^-$ centers for important applications in quantum compu… ▽ More Recently there has been much interest in using Group IV elements from the Periodic Table to fabricate and study X$V$ color centers in diamond where X = Si, Ge, Sn, or Pb and $V$ is a carbon vacancy. These Group IV color centers have a number of interesting spin and optical properties which could potentially make them better candidates than N$V^-$ centers for important applications in quantum computing and quantum information processing. Unfortunately, the very same ion implantation process that is required to create these X$V$ color centers in diamond necessarily also produces many carbon vacancies ($V_{\rm C}$) which can form complexes with these color centers ($V_{\rm C}-$X$V$) that can dramatically affect the properties of the isolated X$V$ color centers. The main focus of this work is to use density-functional theory (DFT) to study the thermodynamics and kinetics of the formation of these $V_{\rm C}-$X$V$ complexes and to suggest experimental ways to impede this process such as varying the Fermi level of the host diamond material through chemical do** or applying an external electrical bias. We also include a discussion of how the simple presence of many $V_{\rm C}$ can negatively impact the spin coherence times ($T_2$) of Group IV color centers through the presence of acoustic phonons. △ Less

Submitted 24 March, 2020; v1 submitted 26 May, 2019; originally announced May 2019.

Comments: 19 pages, 7 figures

Journal ref: Journal of Applied Physics 126, 195103 (2019)

\textit{Ab-initio} Tight-Binding Hamiltonian for Transition Metal Dichalcogenides

Authors: Shiang Fang, Rodrick Kuate Defo, Sharmila N. Shirodkar, Simon Lieu, Georgios A. Tritsaris, Efthimios Kaxiras

Abstract: We present an accurate \textit{ab-initio} tight-binding hamiltonian for the transition-metal dichalcogenides, MoS$_2$, MoSe$_2$, WS$_2$, WSe$_2$, with a minimal basis (the \textit{d} orbitals for the metal atoms and \textit{p} orbitals for the chalcogen atoms) based on a transformation of the Kohn-Sham density function theory (DFT) hamiltonian to a basis of maximally localized Wannier functions (M… ▽ More We present an accurate \textit{ab-initio} tight-binding hamiltonian for the transition-metal dichalcogenides, MoS$_2$, MoSe$_2$, WS$_2$, WSe$_2$, with a minimal basis (the \textit{d} orbitals for the metal atoms and \textit{p} orbitals for the chalcogen atoms) based on a transformation of the Kohn-Sham density function theory (DFT) hamiltonian to a basis of maximally localized Wannier functions (MLWF). The truncated tight-binding hamiltonian (TBH), with only on-site, first and partial second neighbor interactions, including spin-orbit coupling, provides a simple physical picture and the symmetry of the main band-structure features. Interlayer interactions between adjacent layers are modeled by transferable hop** terms between the chalcogen \textit{p} orbitals. The full-range tight-binding hamiltonian (FTBH) can be reduced to hybrid-orbital k $\cdot$ p effective hamiltonians near the band extrema that captures important low-energy excitations. These \textit{ab-initio} hamiltonians can serve as the starting point for applications to interacting many-body physics including optical transitions and Berry curvature of bands, of which we give some examples. △ Less

Submitted 31 October, 2015; v1 submitted 29 June, 2015; originally announced June 2015.

Comments: 16 pages, 10 figures

Journal ref: Phys. Rev. B 92, 205108 (2015)