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Cryogenic Behavior of High-Permittivity Gate Dielectrics: The Impact of the Atomic Layer Deposition Temperature and the Lithography Pattering Method
Authors:
Alessandro Paghi,
Sebastiano Battisti,
Simone Tortorella,
Giorgio De Simoni,
Francesco Giazotto
Abstract:
Dielectrics featuring a high relative permittivity, i.e., high-k dielectrics, have become the standard insulators in gate architectures, enhancing the electrical performance of both room temperature and cryogenic electronics. This study delves into the cryogenic (3 K) performance of high-k dielectrics commonly used as gate insulators. We fabricated Al2O3 and HfO2 layers via Atomic Layer Deposition…
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Dielectrics featuring a high relative permittivity, i.e., high-k dielectrics, have become the standard insulators in gate architectures, enhancing the electrical performance of both room temperature and cryogenic electronics. This study delves into the cryogenic (3 K) performance of high-k dielectrics commonly used as gate insulators. We fabricated Al2O3 and HfO2 layers via Atomic Layer Deposition (ALD) and we extrapolated relative permittivity (k) and dielectric strength (EBD) from AC (100 Hz to 100 kHz) and DC measurements on metal-insulator-metal capacitors. Our findings reveal a strong dependence of HfO2 cryogenic performance on the ALD growth temperature, while the latter shows a negligible impact on Al2O3. We estimated a ~9 % and ~14 % reduction of the relative permittivity of HfO2 and Al2O3, respectively, from 300 K to 3 K. Additionally, we designed and fabricated Al2O3/HfO2 bilayers and we checked their properties at cryogenic temperatures. The study also investigates the impact of the patterning method, namely, UV or electron-beam lithography (acceleration voltage of 10, 20, or 30 kV), on the high-k dielectric properties.
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Submitted 5 July, 2024;
originally announced July 2024.
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Extremely weak sub-kelvin electron-phonon coupling in InAs On Insulator
Authors:
Sebastiano Battisti,
Giorgio De Simoni,
Alessandro Braggio,
Alessandro Paghi,
Lucia Sorba,
Francesco Giazotto
Abstract:
We are proposing a hybrid superconductor-semiconductor platform using indium arsenide (InAs) grown on an insulating layer of indium aluminum arsenide (InAlAs) heterostructure (InAsOI) as an ideal candidate for coherent caloritronic devices. These devices aim to heat or cool electrons out of equilibrium with respect to the phonon degree of freedom. However, their performances are usually limited by…
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We are proposing a hybrid superconductor-semiconductor platform using indium arsenide (InAs) grown on an insulating layer of indium aluminum arsenide (InAlAs) heterostructure (InAsOI) as an ideal candidate for coherent caloritronic devices. These devices aim to heat or cool electrons out of equilibrium with respect to the phonon degree of freedom. However, their performances are usually limited by the strength of the electron-phonon (e-ph) coupling and the associated power loss. Our work discusses the advantages of the InAsOI platform, which are based on the significantly low e-ph coupling measured compared to all-metallic state-of-the-art caloritronic devices. Our structure demonstrates values of the e-ph coupling constant up to two orders of magnitude smaller than typical values in metallic structures.
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Submitted 21 June, 2024;
originally announced June 2024.
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InAs on Insulator: A New Platform for Cryogenic Hybrid Superconducting Electronics
Authors:
Alessandro Paghi,
Giacomo Trupiano,
Giorgio De Simoni,
Omer Arif,
Lucia Sorba,
Francesco Giazotto
Abstract:
Superconducting circuits based on hybrid InAs Josephson Junctions (JJs) play a starring role in the design of fast and ultra-low power consumption solid-state quantum electronics and exploring novel physical phenomena. Conventionally, 3D substrates, 2D quantum wells (QWs), and 1D nanowires (NWs) made of InAs are employed to create superconductive circuits with hybrid JJs. Each platform has its adv…
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Superconducting circuits based on hybrid InAs Josephson Junctions (JJs) play a starring role in the design of fast and ultra-low power consumption solid-state quantum electronics and exploring novel physical phenomena. Conventionally, 3D substrates, 2D quantum wells (QWs), and 1D nanowires (NWs) made of InAs are employed to create superconductive circuits with hybrid JJs. Each platform has its advantages and disadvantages. Here, we proposed the InAs-on-insulator (InAsOI) as a groundbreaking platform for develo** superconducting electronics. An epilayer of semiconductive InAs with different electron densities was grown onto an InAlAs metamorphic buffer layer, efficiently used as a cryogenic insulator to decouple adjacent devices electrically. JJs with various lengths and widths were fabricated employing Al as a superconductor and InAs with different electron densities. We achieved a switching current density of 7.3 uA/um, a critical voltage of 50-to-80 uV, and a critical temperature equal to that of the superconductor used. For all the JJs, the switching current follows a characteristic Fraunhofer pattern with an out-of-plane magnetic field. These achievements enable the use of InAsOI to design and fabricate surface-exposed Josephson Field Effect Transistors with high critical current densities and superior gating properties.
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Submitted 13 May, 2024;
originally announced May 2024.
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Tunable Thermoelectric Superconducting Heat Pipe and Diode
Authors:
F. Antola,
A. Braggio,
G. De Simoni,
F. Giazotto
Abstract:
Efficient heat management at cryogenic temperatures is crucial for superconducting quantum technologies. In this study, we demonstrate the heat diode performance of a gap asymmetric superconducting tunnel junction. Our results show that the mechanism of bipolar thermoelectricity, which occurs when the hot side has the larger gap, boosts heat rectification. This improvement is consistent for a broa…
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Efficient heat management at cryogenic temperatures is crucial for superconducting quantum technologies. In this study, we demonstrate the heat diode performance of a gap asymmetric superconducting tunnel junction. Our results show that the mechanism of bipolar thermoelectricity, which occurs when the hot side has the larger gap, boosts heat rectification. This improvement is consistent for a broad range of thermal biases and for different values of the superconducting gaps. Additionally, we demonstrate that bipolar thermoelectricity can act as a heat pipe, reducing heat losses towards cold terminals and increasing overall efficiency up to $65\%$. Finally, we show that by adjusting the electrical load, it is possible to tune the heat pipe and diode performances.
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Submitted 29 March, 2024;
originally announced March 2024.
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Quasi-ideal feedback-loop supercurrent diode
Authors:
Giorgio De Simoni,
Francesco Giazotto
Abstract:
We suggest using a device called the Bootstrap Superconducting Quantum Interference Device (BS-SQUID) to break the reciprocity in charge transport. This device uses magnetic flux back-action to create a nonreciprocal current-voltage characteristic, which results in a supercurrent rectification coefficient of up to approximately 95\%. The BS-SQUID works as a quasi-ideal supercurrent diode (SD) and…
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We suggest using a device called the Bootstrap Superconducting Quantum Interference Device (BS-SQUID) to break the reciprocity in charge transport. This device uses magnetic flux back-action to create a nonreciprocal current-voltage characteristic, which results in a supercurrent rectification coefficient of up to approximately 95\%. The BS-SQUID works as a quasi-ideal supercurrent diode (SD) and maintains its efficiency up to about 40\% of its critical temperature. The external magnetic flux can be used to adjust or reverse the rectification polarity. Finally, we discuss the finite-voltage operation regime of the SD and present a possible application of our device as a half- and full-wave signal rectifier in the microwave regime.
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Submitted 22 February, 2024;
originally announced February 2024.
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Demonstration of high-impedance superconducting NbRe Dayem bridges
Authors:
S. Battisti,
J. Koch,
A. Paghi,
L. Ruf,
A. Gulian,
S. Teknowijoyo,
C. Cirillo,
Z. Makhdoumi Kakhaki,
C. Attanasio,
E. Scheer,
A. Di Bernardo,
G. De Simoni,
F. Giazotto
Abstract:
Here we demonstrate superconducting Dayem-bridge weak-links made of different stoichiometric compositions of NbRe. Our devices possess a relatively high critical temperature, normal-state resistance, and kinetic inductance. In particular, the high kinetic inductance makes this material a good alternative to more conventional niobium-based superconductors (e.g., NbN or NbTiN) for the realization of…
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Here we demonstrate superconducting Dayem-bridge weak-links made of different stoichiometric compositions of NbRe. Our devices possess a relatively high critical temperature, normal-state resistance, and kinetic inductance. In particular, the high kinetic inductance makes this material a good alternative to more conventional niobium-based superconductors (e.g., NbN or NbTiN) for the realization of superinductors and high-quality factor resonators, whereas the high normal-state resistance yields a large output voltage in superconducting switches and logic elements realized upon this compound. Moreover, out-of-plane critical magnetic fields exceeding 2 T ensure that possible applications requiring high magnetic fields can also be envisaged. Altogether, these features make this material appealing for a number of applications in the framework of quantum technologies.
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Submitted 15 May, 2024; v1 submitted 7 December, 2023;
originally announced December 2023.
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Gate-controlled supercurrent effect in dry-etched Dayem bridges of non-centrosymmetric niobium rhenium
Authors:
Jennifer Koch,
Carla Cirillo,
Sebastiano Battisti,
Leon Ruf,
Zahra Makhdoumi Kakhaki,
Alessandro Paghi,
Armen Gulian,
Serafim Teknowijoyo,
Giorgio De Simoni,
Francesco Giazotto,
Carmine Attanasio,
Elke Scheer,
Angelo Di Bernardo
Abstract:
The application of a gate voltage to control the superconducting current flowing through a nanoscale superconducting constriction, named as gate-controlled supercurrent (GCS), has raised great interest for fundamental and technological reasons. To gain a deeper understanding of this effect and develop superconducting technologies based on it, the material and physical parameters crucial for GCS mu…
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The application of a gate voltage to control the superconducting current flowing through a nanoscale superconducting constriction, named as gate-controlled supercurrent (GCS), has raised great interest for fundamental and technological reasons. To gain a deeper understanding of this effect and develop superconducting technologies based on it, the material and physical parameters crucial for GCS must be identified. Top-down fabrication protocols should be also optimized to increase device scalability, although studies suggest that top-down fabricated devices are more resilient to show GCS. Here, we investigate gated superconducting nanobridges made with a top-down fabrication process from thin films of the non-centrosymmetric superconductor NbRe. Unlike other devices previously reported, our NbRe devices systematically exhibit GCS, when made in specific conditions, which paves the way for higher device scalability. Our results also suggest that surface properties of NbRe nanobridges and their modification during fabrication are key for GCS.
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Submitted 7 December, 2023;
originally announced December 2023.
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Estimation of the FR4 Microwave Dielectric Properties at Cryogenic Temperature for Quantum-Chip-Interface PCBs Design
Authors:
A. Paghi,
G. Trupiano,
C. Puglia,
H. Burgaud,
G. De Simoni,
A. Greco,
F. Giazotto
Abstract:
Ad-hoc interface PCBs are today the standard connection between cryogenic cabling and quantum chips. Besides low-loss and low-temperature-dependent-dielectric-permittivity materials, FR4 provides a low-cost solution for fabrication of cryogenic PCBs. Here, we report on an effective way to evaluate the dielectric performance of a FR4 laminate used as substrate for cryogenic microwave PCBs. We desig…
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Ad-hoc interface PCBs are today the standard connection between cryogenic cabling and quantum chips. Besides low-loss and low-temperature-dependent-dielectric-permittivity materials, FR4 provides a low-cost solution for fabrication of cryogenic PCBs. Here, we report on an effective way to evaluate the dielectric performance of a FR4 laminate used as substrate for cryogenic microwave PCBs. We designed a coplanar waveguide λ/2 open-circuit series resonator and we fabricated the PCB using a low-cost manufacturing process. Such a geometry allows to exploit the resonance peak of the resonator to measure the variation of the complex dielectric permittivity as a function of the temperature. Resonance peak frequency and magnitude were used as sensing parameters for the real part of dielectric permittivity and dielectric loss tangent, respectively. We estimated a 9 % reduction of the real part of the dielectric permittivity and a 70 % reduction of the dielectric loss tangent in the temperature range from 300 to 4 K. The proposed approach can be immediately extended to the detection of cryogenic temperature-dependent dielectric performance of any kind on substrate.
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Submitted 2 October, 2023;
originally announced October 2023.
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Circuit-theoretic phenomenological model of an electrostatic gate-controlled bi-SQUID
Authors:
Thomas X. Kong,
Jace Cruddas,
Jonathan Marenkovic,
Wesley Tang,
Giorgio De Simoni,
Francesco Giazotto,
Giuseppe C. Tettamanzi
Abstract:
A numerical model based on a lumped circuit element approximation for a bi-superconducting quantum interference device (bi-SQUID) operating in the presence of an external magnetic field is presented in this paper. Included in the model is the novel ability to capture the resultant behaviour of the device when a strong electric field is applied to its Josephson junctions by utilising gate electrode…
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A numerical model based on a lumped circuit element approximation for a bi-superconducting quantum interference device (bi-SQUID) operating in the presence of an external magnetic field is presented in this paper. Included in the model is the novel ability to capture the resultant behaviour of the device when a strong electric field is applied to its Josephson junctions by utilising gate electrodes. The model is used to simulate an all-metallic SNS (Al-Cu-Al) bi-SQUID, where good agreement is observed between the simulated results and the experimental data. The results discussed in this work suggest that the primary consequences of the superconducting field effect induced by the gating of the Josephson junctions are accounted for in our minimal model; namely, the suppression of the junctions super-current. Although based on a simplified semi-empirical model, our results may guide the search for a microscopic origin of this effect by providing a means to model the voltage response of gated SQUIDs. Also, the possible applications of this effect regarding the operation of SQUIDs as ultra-high precision sensors, where the performance of such devices can be improved via careful tuning of the applied gate voltages, are discussed at the end of the paper.
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Submitted 13 May, 2024; v1 submitted 3 September, 2023;
originally announced September 2023.
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Bipolar thermoelectric superconducting single-electron transistor
Authors:
Sebastiano Battisti,
Giorgio De Simoni,
Luca Chirolli,
Alessandro Braggio,
Francesco Giazotto
Abstract:
Thermoelectric effects in normal metals and superconductors are usually very small due to the presence of electron-hole symmetry. Here, we show that superconducting junctions brought out of equilibrium manifest a sizable bipolar thermoelectric effect that stems from a strong violation of the detailed balance. To fully control the effect, we consider a thermally biased SIS'IS junction where the cap…
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Thermoelectric effects in normal metals and superconductors are usually very small due to the presence of electron-hole symmetry. Here, we show that superconducting junctions brought out of equilibrium manifest a sizable bipolar thermoelectric effect that stems from a strong violation of the detailed balance. To fully control the effect, we consider a thermally biased SIS'IS junction where the capacitance of the central S' region is small enough to establish a Coulomb blockade regime. By exploiting charging effects we are able to tune the Seebeck voltage, the thermocurrent, and thereby the power output of this structure, via an external gate. We then analyse the main figures of merit of bipolar thermoelectricity and we prospect for possible applications.
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Submitted 23 May, 2023;
originally announced May 2023.
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Effects of fabrication routes and material parameters on the control of superconducting currents by gate voltage
Authors:
Leon Ruf,
Tosson Elalaily,
Claudio Puglia,
Yurii P. Ivanov,
Francois Joint,
Martin Berke,
Andrea Iorio,
Peter Makk,
Giorgio De Simoni,
Simone Gasparinetti,
Giorgio Divitini,
Szabolcs Csonka,
Francesco Giazotto,
Elke Scheer,
Angelo Di Bernardo
Abstract:
The control of a superconducting current via the application of a gate voltage has been recently demonstrated in a variety of superconducting devices. Although the mechanism underlying this gate-controlled supercurrent (GCS) effect remains under debate, the GCS effect has raised great interest for the development of the superconducting equivalent of conventional metaloxide semiconductor electronic…
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The control of a superconducting current via the application of a gate voltage has been recently demonstrated in a variety of superconducting devices. Although the mechanism underlying this gate-controlled supercurrent (GCS) effect remains under debate, the GCS effect has raised great interest for the development of the superconducting equivalent of conventional metaloxide semiconductor electronics. To date, however, the GCS effect has been mostly observed in superconducting devices made by additive patterning. Here, we show that devices made by subtractive patterning show a systematic absence of the GCS effect. Doing a microstructural analysis of these devices and comparing them to devices made by additive patterning, where we observe a GCS, we identify some material and physical parameters that are crucial for the observation of a GCS. We also show that some of the mechanisms proposed to explain the origin of the GCS effect are not universally relevant.
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Submitted 7 December, 2023; v1 submitted 14 April, 2023;
originally announced April 2023.
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Gate-control of superconducting current: mechanisms, parameters and technological potential
Authors:
Leon Ruf,
Claudio Puglia,
Tosson Elalaily,
Giorgio De Simoni,
Francois Joint,
Martin Berke,
Jennifer Koch,
Andrea Iorio,
Sara Khorshidian,
Peter Makk,
Simone Gasparinetti,
Szabolcs Csonka,
Wolfgang Belzig,
Mario Cuoco,
Francesco Giazotto,
Elke Scheer,
Angelo Di Bernardo
Abstract:
In conventional metal-oxide semiconductor (CMOS) electronics, the logic state of a device is set by a gate voltage (VG). The superconducting equivalent of such effect had remained unknown until it was recently shown that a VG can tune the superconducting current (supercurrent) flowing through a nanoconstriction in a superconductor. This gate-controlled supercurrent (GCS) effect can lead to superco…
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In conventional metal-oxide semiconductor (CMOS) electronics, the logic state of a device is set by a gate voltage (VG). The superconducting equivalent of such effect had remained unknown until it was recently shown that a VG can tune the superconducting current (supercurrent) flowing through a nanoconstriction in a superconductor. This gate-controlled supercurrent (GCS) effect can lead to superconducting logics like CMOS logics, but with lower energy dissipation. The physical mechanism underlying the GCS effect, however, remains under debate. In this review article, we illustrate the main mechanisms proposed for the GCS effect, and the material and device parameters that mostly affect it based on the evidence reported. We will come to the conclusion that different mechanisms are at play in the different studies reported so far. We then outline studies that can help answer open questions on the effect and achieve control over it, which is key for applications. We finally give insights into the impact that the GCS effect can have towards high-performance computing with low-energy dissipation and quantum technologies.
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Submitted 28 February, 2024; v1 submitted 27 February, 2023;
originally announced February 2023.
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A gate- and flux-controlled supercurrent diode
Authors:
Federico Paolucci,
Giorgio De Simoni,
Francesco Giazotto
Abstract:
Non-reciprocal charge transport in supercurrent diodes (SDs) polarized growing interest in the last few years for its potential applications in superconducting electronics (SCE). So far, SD effects have been reported in complex hybrid superconductor/semiconductor structures or metallic systems subject to moderate magnetic fields, thus showing a limited potentiality for practical applications in SC…
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Non-reciprocal charge transport in supercurrent diodes (SDs) polarized growing interest in the last few years for its potential applications in superconducting electronics (SCE). So far, SD effects have been reported in complex hybrid superconductor/semiconductor structures or metallic systems subject to moderate magnetic fields, thus showing a limited potentiality for practical applications in SCE. Here, we report the design and the realization of a monolithic SD by exploiting a Dayem bridge-based superconducting quantum interference device (SQUID). Our structure allows reaching rectification efficiencies ($η$) up to about 6%. Moreover, the absolute value and the polarity of $η$ can be selected on demand by the modulation of an external magnetic flux or by a gate voltage, thereby guaranteeing high versatility and improved switching speed. Furthermore, our SD operates in a wide range of temperatures up to about the 70% of the superconducting critical temperature of the titanium film composing the interferometer. Our SD can find extended applications in SCE by operating in synergy with widespread superconducting technologies, such as nanocryotrons, rapid single flux quanta (RSFQs) and memories.
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Submitted 22 November, 2022;
originally announced November 2022.
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Ultra linear magnetic flux-to-voltage conversion in superconducting quantum interference proximity transistors
Authors:
Giorgio De Simoni,
Francesco Giazotto
Abstract:
Superconducting interferometers are quantum devices able to transduce a magnetic flux into an electrical output with excellent sensitivity, integrability and power consumption. Yet, their voltage response is intrinsically non-linear, a limitation which is conventionally circumvented through the introduction of compensation inductances or by the construction of complex device arrays. Here we propos…
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Superconducting interferometers are quantum devices able to transduce a magnetic flux into an electrical output with excellent sensitivity, integrability and power consumption. Yet, their voltage response is intrinsically non-linear, a limitation which is conventionally circumvented through the introduction of compensation inductances or by the construction of complex device arrays. Here we propose an intrinsically-linear flux-to-voltage mesoscopic transducer, called bi-SQUIPT, based on the superconducting quantum interference proximity transistor as fundamental building block. The bi-SQUIPT provides a voltage-noise spectral density as low as $\sim10^{-16}$ V/Hz$^{1/2}$ and, more interestingly, under a proper operation parameter selection, exhibits a spur-free dynamic range as large as $\sim60$ dB, a value on par with that obtained with state-of-the-art SQUID-based linear flux-to-voltage superconducting transducers. Furthermore, thanks to its peculiar measurement configuration, the bi-SQUIPT is tolerant to imperfections and non-idealities in general. For the above reasons, we believe that the bi-SQUIPT could provide a relevant step-beyond in the field of low-dissipation and low-noise current amplification with a special emphasis on applications in cryogenic quantum electronics.
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Submitted 1 July, 2022;
originally announced July 2022.
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Ultra-Highly Linear Magnetic Flux-to-Voltage response in Proximity-based Mesoscopic bi-SQUIDs
Authors:
Giorgio De Simoni,
Lorenzo Cassola,
Nadia Ligato,
Giuseppe C. Tettamanzi,
Francesco Giazotto
Abstract:
Superconducting double-loop interferometers (bi-SQUIDs) have been introduced to produce magnetic flux sensors specifically designed to exhibit ultra-highly linear voltage response as a function of the magnetic flux. These devices are very important for the quantum sensing and for signal processing of signals oscillating at the radio-frequencies range of the electromagnetic spectrum. Here, we repor…
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Superconducting double-loop interferometers (bi-SQUIDs) have been introduced to produce magnetic flux sensors specifically designed to exhibit ultra-highly linear voltage response as a function of the magnetic flux. These devices are very important for the quantum sensing and for signal processing of signals oscillating at the radio-frequencies range of the electromagnetic spectrum. Here, we report an Al double-loop bi-SQUIDs based on proximitized mesoscopic Cu Josephson junctions. Such a scheme provides an alternative fabrication approach to conventional tunnel junction-based interferometers, where the junction characteristics and, consequently, the magnetic flux-to-voltage and magnetic flux-to-critical current device response can be largely and easily tailored by the geometry of the metallic weak-links. We discuss the performance of such sensors by showing a full characterization of the device switching current and voltage drop \textit{vs.} magnetic flux for temperatures of operation ranging from 30 mK to $\sim 1$ K. The figure of merit of the transfer function and of the total harmonic distortion are also discussed. The latter provides an estimate of the linearity of the flux-to-voltage device response, which obtained values as large as 45 dB. Such a result let us foresee a performance already on pair with that achieved in conventional tunnel junction-based bi-SQUIDs arrays composed of hundreds of interferometers.
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Submitted 17 December, 2021;
originally announced December 2021.
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Electrostatic field-driven supercurrent suppression in ionic-gated metallic Josephson nanotransistors
Authors:
Federico Paolucci,
Francesco Crisà,
Giorgio De Simoni,
Lennart Bours,
Claudio Puglia,
Elia Strambini,
Stefano Roddaro,
Francesco Giazotto
Abstract:
Recent experiments have shown the possibility to tune the electron transport properties of metallic nanosized superconductors through a gate voltage. These results renewed the longstanding debate on the interaction between intense electrostatic fields and superconductivity. Indeed, different works suggested competing mechanisms as the cause of the effect: unconventional electric field-effect or qu…
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Recent experiments have shown the possibility to tune the electron transport properties of metallic nanosized superconductors through a gate voltage. These results renewed the longstanding debate on the interaction between intense electrostatic fields and superconductivity. Indeed, different works suggested competing mechanisms as the cause of the effect: unconventional electric field-effect or quasiparticle injection. By realizing ionic-gated Josephson field-effect nanotransistors (IJoFETs), we provide the conclusive evidence of electrostatic field-driven control of the supercurrent in metallic nanosized superconductors. Our Nb IJoFETs show bipolar giant suppression of the superconducting critical current up to $\sim45\%$ with negligible variation of both the critical temperature and the normal-state resistance, in a setup where both overheating and charge injection are impossible. The microscopic explanation of these results calls upon a novel theory able to describe the non-trivial interaction of static electric fields with conventional superconductivity.
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Submitted 5 July, 2021; v1 submitted 2 July, 2021;
originally announced July 2021.
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Gate-control of the current-flux relation of a Josephson quantum interferometer based on proximitized metallic nanojuntions
Authors:
Giorgio De Simoni,
Sebastiano Battisti,
Nadia Ligato,
Maria Teresa Mercaldo,
Mario Cuoco,
Francesco Giazotto
Abstract:
We demonstrate an Al superconducting quantum interference device in which the Josephson junctions are implemented through gate-controlled proximitized Cu mesoscopic weak-links. The latter behave analogously to genuine superconducting metals in terms of the response to electrostatic gating, and provide a good performance in terms of current-modulation visibility. We show that, through the applicati…
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We demonstrate an Al superconducting quantum interference device in which the Josephson junctions are implemented through gate-controlled proximitized Cu mesoscopic weak-links. The latter behave analogously to genuine superconducting metals in terms of the response to electrostatic gating, and provide a good performance in terms of current-modulation visibility. We show that, through the application of a static gate voltage, we are able to modify the interferometer current-flux relation in a fashion which seems compatible with the introduction of $π$-channels within the gated weak-link. Our results suggest that the microscopic mechanism at the origin of the suppression of the switching current in the interferometer is apparently phase coherent, resulting in an overall dam** of the superconducting phase rigidity. We finally tackle the performance of the interferometer in terms of responsivity to magnetic flux variations in the dissipative regime, and discuss the practical relevance of gated proximity-based all-metallic SQUIDs for magnetometry at the nanoscale.
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Submitted 8 June, 2021; v1 submitted 7 June, 2021;
originally announced June 2021.
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Phase slips dynamics in gated Ti and V all-metallic supercurrent nano-transistors: a review
Authors:
Claudio Puglia,
Giorgio De Simoni,
Francesco Giazotto
Abstract:
The effect of electrostatic gating on metallic elemental superconductors was recently demonstrated in terms of modulation of the switching current and control of the current phase relation in superconducting quantum interferometers. The latter suggests the existence of a direct connection between the macroscopic quantum phase in a superconductor and the applied gate voltage. The measurement of the…
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The effect of electrostatic gating on metallic elemental superconductors was recently demonstrated in terms of modulation of the switching current and control of the current phase relation in superconducting quantum interferometers. The latter suggests the existence of a direct connection between the macroscopic quantum phase in a superconductor and the applied gate voltage. The measurement of the switching current cumulative probability distributions (SCCPD) is a convenient and powerful tool to analyze such relation. In particular, the comparison between the conventional Kurkijarvi-Fulton-Dunkleberger model and the gate-driven distributions give useful insights into the microscopic origin of the gating effect. In this review, we summarize the main results obtained in the analysis of the phase slip events in elemental gated superconducting weak-links in a wide range of temperatures between 20 mK and 3.5 K. Such a large temperature range demonstrates both that the gating effect is robust as the temperature increases, and that fluctuations induced by the electric field are not negligible in a wide temperature range.
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Submitted 21 February, 2021;
originally announced February 2021.
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Gate control of superconductivity in mesoscopic all-metallic devices
Authors:
Claudio Puglia,
Giorgio De Simoni,
Francesco Giazotto
Abstract:
It was recently demonstrated the possibility to tune, through the application of a control gate voltage, the superconducting properties of mesoscopic devices based on Bardeen-Cooper-Schrieffer metals. In spite of the several experimental evidence obtained on different materials and geometries, a description of the microscopic mechanism at the basis of such unconventional effect has not been provid…
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It was recently demonstrated the possibility to tune, through the application of a control gate voltage, the superconducting properties of mesoscopic devices based on Bardeen-Cooper-Schrieffer metals. In spite of the several experimental evidence obtained on different materials and geometries, a description of the microscopic mechanism at the basis of such unconventional effect has not been provided yet. This work discusses the technological potential of gate control of superconductivity in metallic superconductors and revises the experimental results which provide information regarding a possible thermal origin of the effect: in the first place, we review experiments performed on high critical temperature elemental superconductors (niobium and vanadium) and show how devices based on these materials can be exploited to realize basic electronic tools such as, e. g., a half-wave rectifier. In a second part, we discuss the origin of the gating effect by showing the gate-driven suppression of the supercurrent in a suspended titanium wire and by providing a comparison between thermal and electric switching current probability distributions. Furthermore, we discuss the cold field-emission of electrons from the gate by means of finite element simulations and compare the results with experimental data. Finally, the presented data provide a strong indication regarding the unlikelihood of thermal origin of the gating effect.
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Submitted 2 February, 2021; v1 submitted 30 January, 2021;
originally announced February 2021.
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Gate-controlled Suspended Titanium Nanobridge Supercurrent Transistor
Authors:
M. Rocci,
G. De Simoni,
C. Puglia,
D. Degli Esposti,
E. Strambini,
V. Zannier,
L. Sorba,
F. Giazotto
Abstract:
In a family of experiments carried on all-metallic supercurrent nano-transistors a surprising gating effect has been recently shown. These include the full suppression of the critical supercurrent, the increase of quasiparticle population, the manipulation of the superconducting phase, and the broadening of the switching current distributions. Aside from the high potential for future applications,…
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In a family of experiments carried on all-metallic supercurrent nano-transistors a surprising gating effect has been recently shown. These include the full suppression of the critical supercurrent, the increase of quasiparticle population, the manipulation of the superconducting phase, and the broadening of the switching current distributions. Aside from the high potential for future applications, these findings raised fundamental questions on the origin of these phenomena. To date, two complementary hypotheses are under debate: an electrostatically-triggered orbital polarization at the superconductor surface, or the injection of highly-energetic quasiparticles extracted from the gate. Here, we tackle this crucial issue via a fully suspended gate-controlled Ti nano-transistor. Our geometry allows to eliminate any direct injection of quasiparticles through the substrate thereby making cold electron field emission through the vacuum the only possible charge transport mechanism. With the aid of a fully numerical 3D model in combination with the observed phenomenology and thermal considerations we can rule out, with any realistic likelihood, the occurrence of cold electron field emission. Excluding these two trivial phenomena is pivotal in light of understanding the microscopic nature of gating effect in superconducting nanostructures, which represents an unsolved puzzle in contemporary superconductivity. Yet, from the technological point of view, our suspended fabrication technique provides the enabling technology to implement a variety of applications and fundamental studies combining, for instance, superconductivity with nano-mechanics.
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Submitted 23 January, 2021; v1 submitted 12 June, 2020;
originally announced June 2020.
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Vanadium gate-controlled Josephson half-wave nanorectifier
Authors:
C. Puglia,
G. De Simoni,
N. Ligato,
F. Giazotto
Abstract:
Recently, the possibility to tune the critical current of conventional metallic superconductors via electrostatic gating was shown in wires, Josephson weak-links and superconductor-normal metal-superconductor junctions. Here we exploit such a technique to demonstrate a gate-controlled vanadium-based Dayem nano-bridge operated as a \emph{half-wave} rectifier at $3$ K. Our devices exploit the gate-d…
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Recently, the possibility to tune the critical current of conventional metallic superconductors via electrostatic gating was shown in wires, Josephson weak-links and superconductor-normal metal-superconductor junctions. Here we exploit such a technique to demonstrate a gate-controlled vanadium-based Dayem nano-bridge operated as a \emph{half-wave} rectifier at $3$ K. Our devices exploit the gate-driven modulation of the critical current of the Josephson junction, and the resulting steep variation of its normal-state resistance, to convert an AC signal applied to the gate electrode into a DC one across the junction. All-metallic superconducting gated rectifiers could provide the enabling technology to realize tunable photon detectors and diodes useful for superconducting electronics circuitry.
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Submitted 12 May, 2020;
originally announced May 2020.
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Niobium Dayem nano-bridge Josephson field-effect transistors
Authors:
Giorgio De Simoni,
Claudio Puglia,
Francesco Giazotto
Abstract:
We report on the first realization of Nb-based \textit{all-metallic} gated Dayem nano-bridge field-effect transistors (Nb-FETs). These Josephson devices operate up to a temperature of $\sim 3$ K, and exhibit full suppression of the supercurrent thanks to the application of a control gate voltage. The dependence of the kinetic inductance and of the transconductance on gate voltage promises a perfor…
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We report on the first realization of Nb-based \textit{all-metallic} gated Dayem nano-bridge field-effect transistors (Nb-FETs). These Josephson devices operate up to a temperature of $\sim 3$ K, and exhibit full suppression of the supercurrent thanks to the application of a control gate voltage. The dependence of the kinetic inductance and of the transconductance on gate voltage promises a performance already on par with so far realized metallic Josephson transistors, and let to foresee the implementation of a superconducting digital logic based on Nb-FETs. We conclude by showing the practical realization of a scheme implementing an all-metallic gate-tunable \emph{half-wave} rectifier to be used either for superconducting electronics or for photon detection applications.
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Submitted 20 April, 2020;
originally announced April 2020.
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Electrostatic control of phase slips in Ti Josephson nanotransistors
Authors:
C. Puglia,
G. De Simoni,
F. Giazotto
Abstract:
The investigation of the switching current probability distribution of a Josephson junction is a conventional tool to gain information on the phase slips dynamics as a function of the temperature. Here we adopt this well-established technique to probe the impact of an external static electric field on the occurrence of phase slips in gated all-metallic titanium (Ti) Josephson weak links. We show,…
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The investigation of the switching current probability distribution of a Josephson junction is a conventional tool to gain information on the phase slips dynamics as a function of the temperature. Here we adopt this well-established technique to probe the impact of an external static electric field on the occurrence of phase slips in gated all-metallic titanium (Ti) Josephson weak links. We show, in a temperature range between 20 mK and 420 mK, that the evolution of the phase slips dynamics as a function of the electrostatic field starkly differs from that observed as a function of the temperature. This fact demonstrates, on the one hand, that the electric field suppression of the critical current is not simply related to a conventional thermal-like quasiparticle overheating in the weak-link region. On the other hand, our results may open the way to operate an electrostatic-driven manipulation of phase slips in metallic Josephson nanojunctions, which can be pivotal for the control of decoherence in superconducting nanostructures.
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Submitted 4 May, 2020; v1 submitted 30 October, 2019;
originally announced October 2019.
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Field-Effect Control of Metallic Superconducting Systems
Authors:
Federico Paolucci,
Giorgio De Simoni,
Paolo Solinas,
Elia Strambini,
Claudio Puglia,
Nadia Ligato,
Francesco Giazotto
Abstract:
Despite metals are believed to be insensitive to field-effect and conventional Bardeen-Cooper-Schrieffer (BCS) theories predict the electric field to be ineffective on conventional superconductors, a number of gating experiments showed the possibility of modulating the conductivity of metallic thin films and the critical temperature of conventional superconductors. All these experimental features…
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Despite metals are believed to be insensitive to field-effect and conventional Bardeen-Cooper-Schrieffer (BCS) theories predict the electric field to be ineffective on conventional superconductors, a number of gating experiments showed the possibility of modulating the conductivity of metallic thin films and the critical temperature of conventional superconductors. All these experimental features have been explained by simple charge accumulation/depletion. In 2018, electric field control of supercurrent in conventional metallic superconductors has been demonstrated in a range of electric fields where the induced variation of charge carrier concentration in metals is negligibly small. In fact, no changes of normal state resistance and superconducting critical temperature were reported. Here, we review the experimental results obtained in the realization of field-effect metallic superconducting devices exploiting this unexplained phenomenon. We will start by presenting the seminal results on superconducting BCS wires and nano-constriction Josephson junctions (Dayem bridges) made of different materials, such as titanium, aluminum and vanadium. Then, we show the mastering of the Josephson supercurrent in superconductor-normal metal-superconductor proximity transistors suggesting that the presence of induced superconducting correlations are enough to see this unconventional field-effect. Later, we present the control of the interference pattern in a superconducting quantum interference device indicating the coupling of the electric field with thesuperconducting phase. Among the possible applications of the presented phenomenology, we conclude this review by proposing some devices that may represent a breakthrough in superconducting quantum and classical computation.
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Submitted 7 January, 2020; v1 submitted 27 September, 2019;
originally announced September 2019.
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Field-Effect Controllable Metallic Josephson Interferometer
Authors:
Federico Paolucci,
Francesco Vischi,
Giorgio De Simoni,
Claudio Guarcello,
Paolo Solinas,
Francesco Giazotto
Abstract:
Gate-tunable Josephson junctions (JJs) are the backbone of superconducting classical and quantum computation. Typically, these systems exploit low charge concentration materials, and present technological diffculties limiting their scalability. Surprisingly, electric field modulation of supercurrent in metallic wires and JJs has been recently demonstrated. Here, we report the realization of titani…
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Gate-tunable Josephson junctions (JJs) are the backbone of superconducting classical and quantum computation. Typically, these systems exploit low charge concentration materials, and present technological diffculties limiting their scalability. Surprisingly, electric field modulation of supercurrent in metallic wires and JJs has been recently demonstrated. Here, we report the realization of titanium-based monolithic interferometers which allow tuning both JJs independently via voltage bias applied to capacitively-coupled electrodes. Our experiments demonstrate full control of the amplitude of the switching current (IS) and of the superconducting phase across the single JJ in a wide range of temperatures. Astoundingly, by gate-biasing a single junction the maximum achievable total IS suppresses down to values much lower than the critical current of a single JJ. A theoretical model including gate-induced phase fluctuations on a single junction accounts for our experimental findings. This class of quantum interferometers could represent a breakthrough for several applications such as digital electronics, quantum computing, sensitive magnetometry and single-photon detection.
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Submitted 23 September, 2019; v1 submitted 17 April, 2019;
originally announced April 2019.
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Josephson Field-Effect Transistors Based on All-Metallic Al/Cu/Al Proximity Nanojunctions
Authors:
Giorgio De Simoni,
Federico Paolucci,
Claudio Puglia,
Francesco Giazotto
Abstract:
We demonstrate the first \textit{all-metallic} mesoscopic superconductor-normal metal-superconductor (SNS) field-effect controlled Josephson transistors (SNS-FETs) and show their full characterization from the critical temperature $T_c$ down to 50 mK in the presence of both electric and magnetic field. The ability of a static electric field -applied by mean of a lateral gate electrode- to suppress…
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We demonstrate the first \textit{all-metallic} mesoscopic superconductor-normal metal-superconductor (SNS) field-effect controlled Josephson transistors (SNS-FETs) and show their full characterization from the critical temperature $T_c$ down to 50 mK in the presence of both electric and magnetic field. The ability of a static electric field -applied by mean of a lateral gate electrode- to suppress the critical current $I_s$ in a proximity-induced superconductor is proven for both positive and negative gate voltage values. $I_s$ suppression reached typically about one third of its initial value, saturating at high gate voltages. The transconductance of our SNS-FETs obtains values as high as 100 nA/V at 100 mK. On the fundamental physics side, our results suggest that the mechanism at the basis of the observed phenomenon is quite general and does not rely on the existence of a true pairing potential, but rather the presence of superconducting correlations is enough for the effect to occur. On the technological side, our findings widen the family of materials available for the implementation of all-metallic field-effect transistors to \textit{synthetic} proximity-induced superconductors.
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Submitted 21 June, 2019; v1 submitted 8 March, 2019;
originally announced March 2019.
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Magnetotransport Experiments on Fully Metallic Superconducting Dayem Bridge Field-Effect Transistors
Authors:
Federico Paolucci,
Giorgio De Simoni,
Paolo Solinas,
Elia Strambini,
Nadia Ligato,
Pauli Virtanen,
Alessandro Braggio,
Francesco Giazotto
Abstract:
In the last 60 years conventional solid and electrolyte gating allowed sizable modulations of the surface carrier concentration in metallic superconductors resulting in tuning their conductivity and changing their critical temperature. Recent conventional gating experiments on superconducting metal nano-structures showed full suppression of the critical current without variations of the normal sta…
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In the last 60 years conventional solid and electrolyte gating allowed sizable modulations of the surface carrier concentration in metallic superconductors resulting in tuning their conductivity and changing their critical temperature. Recent conventional gating experiments on superconducting metal nano-structures showed full suppression of the critical current without variations of the normal state resistance and the critical temperature. These results still miss a microscopic explanation. In this article, we show a complete set of gating experiments on Ti-based superconducting Dayem bridges and a suggested classical thermodynamic model which seems to account for several of our experimental findings. In particular, zero-bias resistance and critical current IC measurements highlight the following: the suppression of IC with both polarities of gate voltage, the surface nature of the effect, the critical temperature independence from the electric field and the gate-induced growth of a sub-gap dissipative component. In addition, the temperature dependence of the Josephson critical current seems to show the transition from the ballistic Kulik-Omelyanchuck behavior to the Ambegaokar-Baratoff tunnel-like characteristic by increasing the electric field. Furthermore, the IC suppression persists in the presence of sizeable perpendicular-to-plane magnetic fields. We propose a classical thermodynamic model able to describe some of the experimental observations of the present and previous works. Above all, the model grabs the bipolar electric field induced suppression of IC and the emergence of a sub-gap dissipative component near full suppression of the supercurrent. Finally, applications employing the discussed effect are proposed.
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Submitted 17 December, 2018; v1 submitted 1 August, 2018;
originally announced August 2018.
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A superconducting absolute spin valve
Authors:
G. De Simoni,
E. Strambini,
J. S. Moodera,
F. S. Bergeret,
F. Giazotto
Abstract:
A superconductor with a spin-split excitation spectrum behaves as an ideal ferromagnetic spin-injector in a tunneling junction. It was theoretical predicted that the combination of two such spin-split superconductors with independently tunable magnetizations, may be used as an ideal $absolute$ spin-valve. Here we report on the first switchable superconducting spin-valve based on two EuS/Al bilayer…
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A superconductor with a spin-split excitation spectrum behaves as an ideal ferromagnetic spin-injector in a tunneling junction. It was theoretical predicted that the combination of two such spin-split superconductors with independently tunable magnetizations, may be used as an ideal $absolute$ spin-valve. Here we report on the first switchable superconducting spin-valve based on two EuS/Al bilayers coupled through an aluminum oxide tunnel barrier. The spin-valve shows a relative resistance change between the parallel and antiparallel configuration of the EuS layers up to 900% that demonstrates a highly spin-polarized currents through the junction. Our device may be pivotal for realization of thermoelectric radiation detectors, logical element for a memory cell in cryogenics superconductor-based computers and superconducting spintronics in general.
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Submitted 8 June, 2018;
originally announced June 2018.
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Ultra-efficient superconducting Dayem bridge field-effect transistor
Authors:
Federico Paolucci,
Giorgio De Simoni,
Elia Strambini,
Paolo Solinas,
Francesco Giazotto
Abstract:
Superconducting field-effect transitor (SuFET) and Josephson field-effect transistor (JoFET) technologies take advantage of electric field induced control of charge carrier concentration in order to modulate the channel superconducting properties. Despite field-effect is believed to be unaffective for superconducting metals, recent experiments showed electric field dependent modulation of the crit…
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Superconducting field-effect transitor (SuFET) and Josephson field-effect transistor (JoFET) technologies take advantage of electric field induced control of charge carrier concentration in order to modulate the channel superconducting properties. Despite field-effect is believed to be unaffective for superconducting metals, recent experiments showed electric field dependent modulation of the critical current (IC) in a fully metallic transistor. Yet, the grounding mechanism of this phenomenon is not completely understood. Here, we show the experimental realization of Ti-based Dayem bridge field-effect transistors (DB-FETs) able to control IC of the superconducting channel. Our easy fabrication process DB-FETs show symmetric full suppression of IC for an applied critical gate voltage as low as VCG~+-8V at temperatures reaching about the 85% of the record critical temperature TC~550mK for titanium. The gate-independent TC and normal state resistance (RN) coupled with the increase of resistance in the supercoducting state (RS) for gate voltages close to the critical value (VCG) suggest the creation of field-effect induced metallic puddles in the superconducting sea. Our devices show extremely high values of transconductance (gMAXm~15uA/V at VG~+-6.5V) and variations of Josephson kinetic inductance (LK) with VG of two orders of magnitude. Therefore, the DB-FET appears as an ideal candidate for the realization of superconducting electronics, superconducting qubits, tunable interferometers as well as photon detectors.
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Submitted 13 March, 2018;
originally announced March 2018.
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Metallic supercurrent field-effect transistor
Authors:
G. De Simoni,
F. Paolucci,
P. Solinas,
E. Strambini,
F. Giazotto
Abstract:
In their original formulation of superconductivity, the London brothers predicted the exponential suppression of an $electrostatic$ field inside a superconductor over the so-called London penetration depth, $λ_L$. Despite a few experiments indicating hints of perturbation induced by electrostatic fields, no clue has been provided so far on the possibility to manipulate metallic superconductors via…
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In their original formulation of superconductivity, the London brothers predicted the exponential suppression of an $electrostatic$ field inside a superconductor over the so-called London penetration depth, $λ_L$. Despite a few experiments indicating hints of perturbation induced by electrostatic fields, no clue has been provided so far on the possibility to manipulate metallic superconductors via field-effect. Here we report field-effect control of the supercurrent in $all$-metallic transistors made of different Bardeen-Cooper-Schrieffer (BCS) superconducting thin films. At low temperature, our field-effect transistors (FETs) show a monotonic decay of the critical current under increasing electrostatic field up to total quenching for gate voltage values as large as $\pm 40$V in titanium-based devices. This $bipolar$ field effect persists up to $\sim 85\%$ of the critical temperature ($\sim 0.41$K), and in the presence of sizable magnetic fields. A similar behavior was observed in aluminum thin film FETs. A phenomenological theory accounts for our observations, and points towards the interpretation in terms of an electric-field-induced perturbation propagating inside the superconducting film. In our understanding, this affects the pairing potential and quenches the supercurrent. These results could represent a groundbreaking asset for the realization of an $all$-metallic superconducting field-effect electronics and leading-edge quantum information architectures.
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Submitted 5 June, 2018; v1 submitted 6 October, 2017;
originally announced October 2017.
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Revealing the magnetic proximity effect in EuS/Al bilayers through superconducting tunneling spectroscopy
Authors:
E. Strambini,
V. N. Golovach,
G. De Simoni,
J. S. Moodera,
F. S. Bergeret,
F. Giazotto
Abstract:
A ferromagnetic insulator attached to a superconductor is known to induce an exchange splitting of the Bardeen-Cooper-Schrieffer (BCS) singularity by a magnitude proportional to the magnetization, and penetrating into the superconductor to a depth comparable with the superconducting coherence length. We study this long-range magnetic proximity effect in EuS/Al bilayers and find that the exchange s…
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A ferromagnetic insulator attached to a superconductor is known to induce an exchange splitting of the Bardeen-Cooper-Schrieffer (BCS) singularity by a magnitude proportional to the magnetization, and penetrating into the superconductor to a depth comparable with the superconducting coherence length. We study this long-range magnetic proximity effect in EuS/Al bilayers and find that the exchange splitting of the BCS peaks is present already in the unpolarized state of the ferromagnetic insulator (EuS), and is being further enhanced when magnetizing the sample by a magnetic field. The measurement data taken at the lowest temperatures feature a high contrast which has allowed us to relate the line shape of the split BCS conductance peaks to the characteristic magnetic domain structure of the EuS layer in the unpolarized state. These results pave the way to engineering triplet superconducting correlations at domain walls in EuS/Al bilayers. Furthermore, the hard gap and clear splitting observed in our tunneling spectroscopy measurements indicate that EuS/Al bilayers are excellent candidates for substituting strong magnetic fields in experiments studying Majorana bound states.
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Submitted 22 May, 2017; v1 submitted 13 May, 2017;
originally announced May 2017.
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Lasing in planar semiconductor diodes
Authors:
Giorgio De Simoni,
Lukas Mahler,
Vincenzo Piazza,
Alessandro Tredicucci,
Christine A. Nicoll,
Harvey E. Beere,
David A. Ritchie,
Fabio Beltram
Abstract:
We present a planar laser diode based on a simple fabrication scheme compatible with virtually any geometry accessible by standard semiconductor lithography technique. We show that our lasers exhibit ~1 GHz -3dB-modulation-bandwidth already in this prototypical implementation. Directions for a significant speed increase are discussed.
We present a planar laser diode based on a simple fabrication scheme compatible with virtually any geometry accessible by standard semiconductor lithography technique. We show that our lasers exhibit ~1 GHz -3dB-modulation-bandwidth already in this prototypical implementation. Directions for a significant speed increase are discussed.
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Submitted 7 November, 2011;
originally announced November 2011.
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Anti-bunched photons from a lateral light-emitting diode
Authors:
Tommaso Lunghi,
Giorgio De Simoni,
Vincenzo Piazza,
Christine A. Nicoll,
Harvey E. Beere,
David A. Ritchie,
Fabio Beltram
Abstract:
We demonstrate anti-bunched emission from a lateral-light emitting diode. Sub-Poissonian emission statistic, with a g$^{(2)}$(0)=0.7, is achieved at cryogenic temperature in the pulsed low-current regime, by exploiting electron injection through shallow impurities located in the diode depletion region. Thanks to its simple fabrication scheme and to its modulation bandwidth in the GHz range, we bel…
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We demonstrate anti-bunched emission from a lateral-light emitting diode. Sub-Poissonian emission statistic, with a g$^{(2)}$(0)=0.7, is achieved at cryogenic temperature in the pulsed low-current regime, by exploiting electron injection through shallow impurities located in the diode depletion region. Thanks to its simple fabrication scheme and to its modulation bandwidth in the GHz range, we believe our devices are an appealing substitute for highly-attenuated lasers in existing quantum-key-distribution systems. Our devices outperform strongly-attenuated lasers in terms of multi-photon emission events and can therefore lead to a significant security improvement in existing quantum key distribution systems.
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Submitted 22 September, 2011;
originally announced September 2011.
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Delocalized-localized transition in a semiconductor two-dimensional honeycomb lattice
Authors:
G. De Simoni,
A. Singha,
M. Gibertini,
B. Karmakar,
M. Polini,
V. Piazza,
L. N. Pfeiffer,
K. W. West,
F. Beltram,
V. Pellegrini
Abstract:
We report the magneto-transport properties of a two-dimensional electron gas in a modulation-doped AlGaAs/GaAs heterostructure subjected to a lateral potential with honeycomb geometry. Periodic oscillations of the magneto-resistance and a delocalized-localized transition are shown by applying a gate voltage. We argue that electrons in such artificial-graphene lattices offer a promising approach fo…
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We report the magneto-transport properties of a two-dimensional electron gas in a modulation-doped AlGaAs/GaAs heterostructure subjected to a lateral potential with honeycomb geometry. Periodic oscillations of the magneto-resistance and a delocalized-localized transition are shown by applying a gate voltage. We argue that electrons in such artificial-graphene lattices offer a promising approach for the simulation of quantum phases dictated by Coulomb interactions.
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Submitted 19 July, 2010;
originally announced July 2010.
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Acoustoelectric luminescence from a field-effect n-i-p lateral junction
Authors:
Giorgio De Simoni,
Vincenzo Piazza,
Lucia Sorba,
Giorgio Biasiol,
Fabio Beltram
Abstract:
A surface-acoustic-wave (SAW) driven light-emitting-diode structure that can implement a single-photon-source for quantum-cryptography applications is demonstrated. Our lateral n-i-p junction is realized starting from an undoped GaAs/AlGaAs quantum well by gating. It incorporates interdigitated transducers for SAW generation and lateral gates for current control. We demonstrate acoustoelectric t…
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A surface-acoustic-wave (SAW) driven light-emitting-diode structure that can implement a single-photon-source for quantum-cryptography applications is demonstrated. Our lateral n-i-p junction is realized starting from an undoped GaAs/AlGaAs quantum well by gating. It incorporates interdigitated transducers for SAW generation and lateral gates for current control. We demonstrate acoustoelectric transport and SAW-driven electroluminescence. The acoustoelectric current can be controlled down to complete pinch-off by means of the lateral gates.
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Submitted 6 March, 2009;
originally announced March 2009.
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Acoustic charge transport in n-i-n three terminal device
Authors:
Marco Cecchini,
Giorgio De Simoni,
Vincenzo Piazza,
Fabio Beltram,
H. E. Beere,
D. A. Ritchie
Abstract:
We present an unconventional approach to realize acoustic charge transport devices that takes advantage from an original input region geometry in place of standard Ohmic input contacts. Our scheme is based on a n-i-n lateral junction as electron injector, an etched intrinsic channel, a standard Ohmic output contact and a pair of in-plane gates. We show that surface acoustic waves are able to pic…
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We present an unconventional approach to realize acoustic charge transport devices that takes advantage from an original input region geometry in place of standard Ohmic input contacts. Our scheme is based on a n-i-n lateral junction as electron injector, an etched intrinsic channel, a standard Ohmic output contact and a pair of in-plane gates. We show that surface acoustic waves are able to pick up electrons from a current flowing through the n-i-n junction and steer them toward the output contact. Acoustic charge transport was studied as a function of the injector current and bias, the SAW power and at various temperatures. The possibility to modulate the acoustoelectric current by means of lateral in-plane gates is also discussed. The main advantage of our approach relies on the possibility to drive the n-i-n injector by means of both voltage or current sources, thus allowing to sample and process voltage and current signals as well.
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Submitted 25 October, 2005;
originally announced October 2005.
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Surface-acoustic-wave driven planar light-emitting device
Authors:
Marco Cecchini,
Giorgio De Simoni,
Vincenzo Piazza,
Fabio Beltram,
H. E. Beere,
D. A. Ritchie
Abstract:
Electroluminescence emission controlled by means of surface acoustic waves (SAWs) in planar light-emitting diodes (pLEDs) is demonstrated. Interdigital transducers for SAW generation were integrated onto pLEDs fabricated following the scheme which we have recently developed. Current-voltage, light-voltage and photoluminescence characteristics are presented at cryogenic temperatures. We argue tha…
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Electroluminescence emission controlled by means of surface acoustic waves (SAWs) in planar light-emitting diodes (pLEDs) is demonstrated. Interdigital transducers for SAW generation were integrated onto pLEDs fabricated following the scheme which we have recently developed. Current-voltage, light-voltage and photoluminescence characteristics are presented at cryogenic temperatures. We argue that this scheme represents a valuable building block for advanced optoelectronic architectures.
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Submitted 15 March, 2004;
originally announced March 2004.
