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First Principle Study of Alkaline Metal Intercalation in Twisted Bilayer Graphene
Authors:
N K R Perera,
K M Abeywickrama,
W W P De Silva
Abstract:
The intercalant alkaline metals, Ca, Sr, & Ba, are sources of a periodic perturbation on the bilayer graphene, which leads to the formation of an N-type semiconductors. The twist angle between graphene layers applies disorder to the intercalated bilayer graphene to tune the bandgap. The twisted bilayer graphene structures of C8MC8 (M: Ca, Sr, Ba) were studied for the Energy band diagrams, Density…
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The intercalant alkaline metals, Ca, Sr, & Ba, are sources of a periodic perturbation on the bilayer graphene, which leads to the formation of an N-type semiconductors. The twist angle between graphene layers applies disorder to the intercalated bilayer graphene to tune the bandgap. The twisted bilayer graphene structures of C8MC8 (M: Ca, Sr, Ba) were studied for the Energy band diagrams, Density of States, transport properties of Seebeck coefficient, Hall coefficient, Thermal conductivity, and Electrical conductivity using Quantum-Espresso and BoltzTrap software. The bandgap enhances with respect to an increase in twist angle to values of technological requirements to implement in real applications. The peak of the Seebeck coefficient & Hall Effect increase, and Thermal Conductivity & Electrical Conductivity decrease for different twist angles. Therefore, C8MC8 has a significant impact of the twist angle, hence gives possible tailoring of material properties.
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Submitted 2 September, 2021;
originally announced September 2021.
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Effects of Interfacial Distance and Electric Field on Graphene-Silicene Hybrid Structures
Authors:
K M Abeywickrama,
P K D D P Pitigala,
W W P De Silva
Abstract:
Graphene is a two-dimensional (2D) semimetal with high mobility in charge carriers due to the existence of Dirac points. Silicene is another promising material, with properties analog to graphene. Many silicon (Si) based electronic devices can be integrated via graphene-silicene (Gra/si) hybrid structures. These electronic applications are mostly based on the ability to tune the bandgap via electr…
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Graphene is a two-dimensional (2D) semimetal with high mobility in charge carriers due to the existence of Dirac points. Silicene is another promising material, with properties analog to graphene. Many silicon (Si) based electronic devices can be integrated via graphene-silicene (Gra/si) hybrid structures. These electronic applications are mostly based on the ability to tune the bandgap via electronic structure deformation that is expected to be achieved by multilayer stacking, applying a transverse external electric field (EF), and altering interfacial distance. In this work, we investigate the band structure, density of states (DOS) distribution, and the bandgap with respect to interfacial distance and transverse external EF for the unit cells of bilayer graphene, monolayer silicene, and hybrid Si2C6. First principle calculations were carried using Quantum espresso software based on the Density Functional Theory (DFT).
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Submitted 2 September, 2021;
originally announced September 2021.
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Drive Quantum Matter
Authors:
Gayanath W. Fernando,
R. Matthias Geilhufe,
Adil-Gerai Kussow,
W. Wasanthi P. De Silva
Abstract:
Single- and many-electron calculations and related dynamics are presented for a dimer and small Hubbard clusters. Floquet-Bloch picture for a periodic dimer is discussed with regard to the time dependence of the Peierls gap and the expectation of the current operator. In driven Fermi-Hubbard clusters, the time dependence of Charge Gaps and phase separation along with charge pairing at various clus…
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Single- and many-electron calculations and related dynamics are presented for a dimer and small Hubbard clusters. Floquet-Bloch picture for a periodic dimer is discussed with regard to the time dependence of the Peierls gap and the expectation of the current operator. In driven Fermi-Hubbard clusters, the time dependence of Charge Gaps and phase separation along with charge pairing at various cluster sizes indicate the presence and absence of paired electron states. We examine the effect of electromagnetic time dependent external perturbations on Hubbard many-electron systems in our search of for precursors to superconducting states and time crystals. Two principally different kinds of electromagnetic excitations are analyzed:(1) Recently demonstrated dynamic modulation of Hubbard parameters due to excitation of certain phonon modes within the far-infrared domain, and (2) Hubbard Hamiltonian, with fixed parameters in an electromagnetic field, resonant with transitions between the ground state and high-energy excited states as possible precursors to superconductivity, within visible-near-infrared domains.
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Submitted 20 April, 2021; v1 submitted 15 March, 2021;
originally announced March 2021.
