Showing 1–47 of 47 results for author: De Poortere, E P

Parallel Magnetic Field Tuning of Valley Splitting in AlAs Two-Dimensional Electrons

Authors: T. Gokmen, Medini Padmanabhan, O. Gunawan, Y. P. Shkolnikov, K. Vakili, E. P. De Poortere, M. Shayegan

Abstract: We demonstrate that, in a quasi-two-dimensional electron system confined to an AlAs quantum well and occupying two conduction-band minima (valleys), a parallel magnetic field can couple to the electrons' orbital motion and tune the energies of the two valleys by different amounts. The measured density imbalance between the two valleys, which is a measure of the valley susceptibility with respect… ▽ More We demonstrate that, in a quasi-two-dimensional electron system confined to an AlAs quantum well and occupying two conduction-band minima (valleys), a parallel magnetic field can couple to the electrons' orbital motion and tune the energies of the two valleys by different amounts. The measured density imbalance between the two valleys, which is a measure of the valley susceptibility with respect to parallel magnetic field, is enhanced compared to the predictions of non-interacting calculations, reflecting the role of electron-electron interaction. △ Less

Submitted 19 November, 2008; v1 submitted 19 November, 2008; originally announced November 2008.

Comments: 4+ pages, 4 figures, accepted for publication in Phys. Rev. B

Journal ref: Phys. Rev. B 78, 233306 (2008)

Anomalous giant piezoresistance in AlAs 2D electrons with anti-dot lattices

Authors: O. Gunawan, T. Gokmen, Y. P. Shkolnikov, E. P. De Poortere, M. Shayegan

Abstract: An AlAs two-dimensional electron system patterned with an anti-dot lattice exhibits a giant piezoresistance (GPR) effect, with a sign opposite to the piezoresistance observed in the unpatterned region. We trace the origin of this anomalous GPR to the non-uniform strain in the anti-dot lattice and the exclusion of electrons occupying the two conduction band valleys from different regions of the s… ▽ More An AlAs two-dimensional electron system patterned with an anti-dot lattice exhibits a giant piezoresistance (GPR) effect, with a sign opposite to the piezoresistance observed in the unpatterned region. We trace the origin of this anomalous GPR to the non-uniform strain in the anti-dot lattice and the exclusion of electrons occupying the two conduction band valleys from different regions of the sample. This is analogous to the well-known giant magnetoresistance (GMR) effect, with valley playing the role of spin and strain the role of magnetic field. △ Less

Submitted 2 July, 2007; originally announced July 2007.

Comments: 4 figures, submitted for publication

Journal ref: Physical Review Letter 100, 03660 (2008)

Valley polarization and susceptibility of composite fermions around nu=3/2

Authors: N. C. Bishop, M. Padmanabhan, K. Vakili, Y. P. Shkolnikov, E. P. De Poortere, M. Shayegan

Abstract: We report magnetotransport measurements of fractional quantum Hall states in an AlAs quantum well around Landau level filling factor nu = 3/2, demonstrating that the quasiparticles are composite Fermions (CFs) with a valley degree of freedom. By monitoring the valley level crossings for these states as a function of applied symmetry-breaking strain, we determine the CF valley susceptibility and… ▽ More We report magnetotransport measurements of fractional quantum Hall states in an AlAs quantum well around Landau level filling factor nu = 3/2, demonstrating that the quasiparticles are composite Fermions (CFs) with a valley degree of freedom. By monitoring the valley level crossings for these states as a function of applied symmetry-breaking strain, we determine the CF valley susceptibility and polarization. The data can be explained well by a simple Landau level fan diagram for CFs, and are in nearly quantitative agreement with the results reported for CF spin polarization. △ Less

Submitted 8 June, 2007; originally announced June 2007.

Comments: to appear in Phys. Rev. Lett

Anisotropic low-temperature piezoresistance in (311)A GaAs two-dimensional holes

Authors: B. Habib, J. Shabani, E. P. De Poortere, M. Shayegan, R. Winkler

Abstract: We report low-temperature resistance measurements in a modulation-doped, (311)A GaAs two-dimensional hole system as a function of applied in-plane strain. The data reveal a strong but anisotropic piezoresistance whose magnitude depends on the density as well as the direction along which the resistance is measured. At a density of $1.6\times10^{11}$ cm$^{-2}$ and for a strain of about… ▽ More We report low-temperature resistance measurements in a modulation-doped, (311)A GaAs two-dimensional hole system as a function of applied in-plane strain. The data reveal a strong but anisotropic piezoresistance whose magnitude depends on the density as well as the direction along which the resistance is measured. At a density of $1.6\times10^{11}$ cm$^{-2}$ and for a strain of about $2\times10^{-4}$ applied along [01$\bar{1}$], e.g., the resistance measured along this direction changes by nearly a factor of two while the resistance change in the [$\bar{2}$33] direction is less than 10% and has the opposite sign. Our accurate energy band calculations indicate a pronounced and anisotropic deformation of the heavy-hole dispersion with strain, qualitatively consistent with the experimental data. The extremely anisotropic magnitude of the piezoresistance, however, lacks a quantitative explanation. △ Less

Submitted 5 June, 2007; originally announced June 2007.

Comments: 4 pages. Submitted to Applied Physics Letters

Tuning of the spin-orbit interaction in two-dimensional GaAs holes via strain

Authors: B. Habib, J. Shabani, E. P. De Poortere, M. Shayegan, R. Winkler

Abstract: We report direct measurements of the spin-orbit interaction induced spin-splitting in a modulation-doped GaAs two-dimensional hole system as a function of anisotropic, in-plane strain. The change in spin-subband densities reveals a remarkably strong dependence of the spin-splitting on strain, with up to about 20% enhancement of the splitting upon the application of only about 2 x 10^{-4} strain.… ▽ More We report direct measurements of the spin-orbit interaction induced spin-splitting in a modulation-doped GaAs two-dimensional hole system as a function of anisotropic, in-plane strain. The change in spin-subband densities reveals a remarkably strong dependence of the spin-splitting on strain, with up to about 20% enhancement of the splitting upon the application of only about 2 x 10^{-4} strain. The results are in very good agreement with our numerical calculations of the strain-induced spin-splitting. △ Less

Submitted 4 October, 2006; originally announced October 2006.

Comments: 4 pages, 2 figures

Spin-valley phase diagram of the two-dimensional metal-insulator transition

Authors: O. Gunawan, T. Gokmen, K. Vakili, M. Padmanabhan, E. P. De Poortere, M. Shayegan

Abstract: Using symmetry breaking strain to tune the valley occupation of a two-dimensional (2D) electron system in an AlAs quantum well, together with an applied in-plane magnetic field to tune the spin polarization, we independently control the system's valley and spin degrees of freedom and map out a spin-valley phase diagram for the 2D metal-insulator transition. The insulating phase occurs in the qua… ▽ More Using symmetry breaking strain to tune the valley occupation of a two-dimensional (2D) electron system in an AlAs quantum well, together with an applied in-plane magnetic field to tune the spin polarization, we independently control the system's valley and spin degrees of freedom and map out a spin-valley phase diagram for the 2D metal-insulator transition. The insulating phase occurs in the quadrant where the system is both spin- and valley-polarized. This observation establishes the equivalent roles of spin and valley degrees of freedom in the 2D metal-insulator transition. △ Less

Submitted 19 September, 2006; originally announced September 2006.

Comments: 4 pages, 2 figures

Journal ref: Nature Physics 3, 388 - 391 (2007)

AlAs 2D electrons in an antidot lattice: Electron pinball with elliptical Fermi contours

Authors: O. Gunawan, E. P. De Poortere, M. Shayegan

Abstract: We report ballistic transport measurements in a two-dimensional electron system confined to an AlAs quantum well and patterned with square antidot lattices of period $a = $0.6, 0.8, 1.0 and 1.5 $μ$m. In this system two in-plane conduction-band valleys with elliptical Fermi contours are occupied. The low-field magneto-resistance traces exhibit peaks corresponding to the commensurability of the cy… ▽ More We report ballistic transport measurements in a two-dimensional electron system confined to an AlAs quantum well and patterned with square antidot lattices of period $a = $0.6, 0.8, 1.0 and 1.5 $μ$m. In this system two in-plane conduction-band valleys with elliptical Fermi contours are occupied. The low-field magneto-resistance traces exhibit peaks corresponding to the commensurability of the cyclotron orbits and the antidot lattice. From the dependence of the position of the peak associated with the smallest commensurate orbit on electron density and $a$, we deduce the ratio of the longitudinal and transverse effective masses $m_l/m_t=5.2\pm 0.4$, a fundamental parameter for the anisotropic conduction bands in AlAs. △ Less

Submitted 25 November, 2006; v1 submitted 5 September, 2006; originally announced September 2006.

Comments: 4 pages, 5 figures. Added simulation results and a remark highlighting the paper's relevance to "valleytronics"

Quantized conductance in an AlAs 2D electron system quantum point contact

Authors: O. Gunawan, B. Habib, E. P. De Poortere, M. Shayegan

Abstract: We report experimental results on a quantum point contact (QPC) device formed in a wide AlAs quantum well where the two-dimensional electrons occupy two in-plane valleys with elliptical Fermi contours. To probe the closely-spaced, one-dimensional electric subbands, we fabricated a point contact device defined by shallow-etching and a top gate that covers the entire device. The conductance versus… ▽ More We report experimental results on a quantum point contact (QPC) device formed in a wide AlAs quantum well where the two-dimensional electrons occupy two in-plane valleys with elliptical Fermi contours. To probe the closely-spaced, one-dimensional electric subbands, we fabricated a point contact device defined by shallow-etching and a top gate that covers the entire device. The conductance versus top gate bias trace shows a series of weak plateaus at integer multiples of $2e^2/h$, indicating a broken valley degeneracy in the QPC and implying the potential use of QPC as a simple "valley filter" device. A model is presented to describe the quantized energy levels and the role of the in-plane valleys in the transport. We also observe a well-developed conductance plateau near $0.7x2e^2/h$ which may reflect the strong electron-electron interaction in the system. △ Less

Submitted 11 June, 2006; originally announced June 2006.

Comments: 8 pages, 9 figures

Journal ref: Phys. Rev. B. 74, 155 436 (2006)

Two-dimensional electrons occupying multiple valleys in AlAs

Authors: M. Shayegan, E. P. De Poortere, O. Gunawan, Y. P. Shkolnikov, E. Tutuc, K. Vakili

Abstract: Two-dimensional electrons in AlAs quantum wells occupy multiple conduction-band minima at the X- points of the Brillouin zone. These valleys have large effective mass and g-factor compared to the stan-dard GaAs electrons, and are also highly anisotropic. With proper choice of well width and by applying symmetry-breaking strain in the plane, one can control the occupation of different valleys thu… ▽ More Two-dimensional electrons in AlAs quantum wells occupy multiple conduction-band minima at the X- points of the Brillouin zone. These valleys have large effective mass and g-factor compared to the stan-dard GaAs electrons, and are also highly anisotropic. With proper choice of well width and by applying symmetry-breaking strain in the plane, one can control the occupation of different valleys thus rendering a system with tuneable effective mass, g-factor, Fermi contour anisotropy, and valley degeneracy. Here we review some of the rich physics that this system has allowed us to explore. △ Less

Submitted 6 June, 2006; originally announced June 2006.

Comments: short review article, submitted for publication

Dependence of persistent gaps at Landau level crossings on relative spin

Authors: K. Vakili, T. Gokmen, O. Gunawan, Y. P. Shkolnikov, E. P. De Poortere, M. Shayegan

Abstract: We report measurements of the quantum Hall state energy gap at avoided crossings between Landau levels originating from different conduction band valleys in AlAs quantum wells. These gaps exhibit an approximately linear dependence on magnetic field over a wide range of fields and filling factors. More remarkably, we observe an unexpected dependence of the gap size on the relative spin orientatio… ▽ More We report measurements of the quantum Hall state energy gap at avoided crossings between Landau levels originating from different conduction band valleys in AlAs quantum wells. These gaps exhibit an approximately linear dependence on magnetic field over a wide range of fields and filling factors. More remarkably, we observe an unexpected dependence of the gap size on the relative spin orientation of the crossing levels, with parallel-spin crossings exhibiting larger gaps than antiparallel-spin crossings. △ Less

Submitted 2 June, 2006; originally announced June 2006.

Comments: 4 pages, 3 figures, submitted for publication

Journal ref: Phys. Rev. Lett. 97, 116803 (2006)

High-mobility AlAs quantum wells with out-of-plane valley occupation

Authors: K. Vakili, Y. P. Shkolnikov, E. Tutuc, E. P. De Poortere, M. Padmanabhan, M. Shayegan

Abstract: Employing state-of-the-art molecular beam epitaxy techniques to grow thin, modulation-doped AlAs quantum wells, we have achieved a low temperature mobility of 5.5 m$^2$/Vs with out-of-plane occupation, an order of magnitude improvement over previous studies. However, due to the narrow well width, mobilities are still limited by scattering due to interface roughness disorder. We demonstrate the s… ▽ More Employing state-of-the-art molecular beam epitaxy techniques to grow thin, modulation-doped AlAs quantum wells, we have achieved a low temperature mobility of 5.5 m$^2$/Vs with out-of-plane occupation, an order of magnitude improvement over previous studies. However, due to the narrow well width, mobilities are still limited by scattering due to interface roughness disorder. We demonstrate the successful implementation of a novel technique utilizing thermally-induced, biaxial, tensile strain that forces electrons to occupy the out-of-plane valley in thicker quantum wells, reducing interface roughness scattering and allowing us to achieve mobilities as high as 8.8 m$^2$/Vs. △ Less

Submitted 2 June, 2006; originally announced June 2006.

Comments: 3 pages, 3 figures, submitted for publication

Journal ref: Appl. Phys. Lett. 89, 172118 (2006).

Valley susceptibility of an interacting two-dimensional electron system

Authors: O. Gunawan, Y. P. Shkolnikov, K. Vakili, T. Gokmen, E. P. De Poortere, M. Shayegan

Abstract: We report direct measurements of the valley susceptibility, the change of valley population in response to applied symmetry-breaking strain, in an AlAs two-dimensional electron system. As the two-dimensional density is reduced, the valley susceptibility dramatically increases relative to its band value, reflecting the system's strong electron-electron interaction. The increase has a remarkable r… ▽ More We report direct measurements of the valley susceptibility, the change of valley population in response to applied symmetry-breaking strain, in an AlAs two-dimensional electron system. As the two-dimensional density is reduced, the valley susceptibility dramatically increases relative to its band value, reflecting the system's strong electron-electron interaction. The increase has a remarkable resemblance to the enhancement of the spin susceptibility and establishes the analogy between the spin and valley degrees of freedom. △ Less

Submitted 29 May, 2006; originally announced May 2006.

Comments: 5 pages, 2 figures

Journal ref: Phys. Rev. Lett. 97, 186 404 (2006).

Single-Walled Carbon Nanotubes as Shadow Masks for Nanogap Fabrication

Authors: E. P. De Poortere, L. M. Huang, M. Huang, S. J. Wind, S. O'Brien, J. Hone, H. L. Stormer

Abstract: We describe a technique for fabricating nanometer-scale gaps in Pt wires on insulating substrates, using individual single-walled carbon nanotubes as shadow masks during metal deposition. More than 80% of the devices display current-voltage dependencies characteristic of direct electron tunneling. Fits to the current-voltage data yield gap widths in the 0.8-2.3 nm range for these devices, dimens… ▽ More We describe a technique for fabricating nanometer-scale gaps in Pt wires on insulating substrates, using individual single-walled carbon nanotubes as shadow masks during metal deposition. More than 80% of the devices display current-voltage dependencies characteristic of direct electron tunneling. Fits to the current-voltage data yield gap widths in the 0.8-2.3 nm range for these devices, dimensions that are well suited for single-molecule transport measurements. △ Less

Submitted 11 April, 2006; originally announced April 2006.

Journal ref: Appl. Phys. Lett. 88, 143124 (2006)

Observation of Quantum Hall Valley Skyrmions

Authors: Y. P. Shkolnikov, S. Misra, N. C. Bishop, E. P. De Poortere, M. Shayegan

Abstract: We report measurements of the interaction-induced quantum Hall effect in a spin-polarized AlAs two-dimensional electron system where the electrons occupy two in-plane conduction band valleys. Via the application of in-plane strain, we tune the energies of these valleys and measure the energy gap of the quantum Hall state at filling factor $ν$ = 1. The gap has a finite value even at zero strain a… ▽ More We report measurements of the interaction-induced quantum Hall effect in a spin-polarized AlAs two-dimensional electron system where the electrons occupy two in-plane conduction band valleys. Via the application of in-plane strain, we tune the energies of these valleys and measure the energy gap of the quantum Hall state at filling factor $ν$ = 1. The gap has a finite value even at zero strain and, with strain, rises much faster than expected from a single-particle picture, suggesting that the lowest energy charged excitations at $ν=1$ are "valley Skyrmions". △ Less

Submitted 5 May, 2005; originally announced May 2005.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. Lett. 95, 066809 (2005)

Spin-dependent resistivity at transitions between integer quantum Hall states

Authors: K. Vakili, Y. P. Shkolnikov, E. Tutuc, N. C. Bishop, E. P. De Poortere, M. Shayegan

Abstract: The longitudinal resistivity at transitions between integer quantum Hall states in two-dimensional electrons confined to AlAs quantum wells is found to depend on the spin orientation of the partially-filled Landau level in which the Fermi energy resides. The resistivity can be enhanced by an order of magnitude as the spin orientation of this energy level is aligned with the majority spin. We dis… ▽ More The longitudinal resistivity at transitions between integer quantum Hall states in two-dimensional electrons confined to AlAs quantum wells is found to depend on the spin orientation of the partially-filled Landau level in which the Fermi energy resides. The resistivity can be enhanced by an order of magnitude as the spin orientation of this energy level is aligned with the majority spin. We discuss possible causes and suggest a new explanation for spike-like features observed at the edges of quantum Hall minima near Landau level crossings. △ Less

Submitted 7 January, 2005; originally announced January 2005.

Comments: 4+ pages, 3 figures

Journal ref: Phys. Rev. Lett. 94, 176402 (2005)

Thermopower of Interacting GaAs Bilayer Hole Systems in the Reentrant Insulating Phase near $ν=1$

Authors: S. Faniel, E. Tutuc, E. P. De Poortere, C. Gustin, A. Vlad, S. Melinte, M. Shayegan, V. Bayot

Abstract: We report thermopower measurements of interacting GaAs bilayer hole systems. When the carrier densities in the two layers are equal, these systems exhibit a reentrant insulating phase near the quantum Hall state at total filling factor $ν=1$. Our data show that as the temperature is decreased, the thermopower diverges in the insulating phase. This behavior indicates the opening of an energy gap… ▽ More We report thermopower measurements of interacting GaAs bilayer hole systems. When the carrier densities in the two layers are equal, these systems exhibit a reentrant insulating phase near the quantum Hall state at total filling factor $ν=1$. Our data show that as the temperature is decreased, the thermopower diverges in the insulating phase. This behavior indicates the opening of an energy gap at low temperature, consistent with the formation of a pinned Wigner solid. We extract an energy gap and a Wigner solid melting phase diagram. △ Less

Submitted 27 December, 2004; originally announced December 2004.

Comments: to be published in Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 94, 046802 (2005)

Giant low-temperature piezoresistance effect in AlAs two-dimensional electrons

Authors: Y. P. Shkolnikov, K. Vakili, E. P. De Poortere, M. Shayegan

Abstract: We present piezoresistance measurements in modulation doped AlAs quantum wells where the two-dimensional electron system occupies two conduction band valleys with elliptical Fermi contours. Our data demonstrate that, at low temperatures, the strain gauge factor (the fractional change in resistance divided by the sample's fractional length change) in this system exceeds 10,000. Moreover, in the p… ▽ More We present piezoresistance measurements in modulation doped AlAs quantum wells where the two-dimensional electron system occupies two conduction band valleys with elliptical Fermi contours. Our data demonstrate that, at low temperatures, the strain gauge factor (the fractional change in resistance divided by the sample's fractional length change) in this system exceeds 10,000. Moreover, in the presence of a moderate magnetic field perpendicular to the plane of the two-dimensional system, gauge factors up to 56,000 can be achieved. The piezoresistance data can be explained qualitatively by a simple model that takes into account intervalley charge transfer. △ Less

Submitted 29 November, 2004; originally announced November 2004.

Journal ref: Applied Physics Letters -- October 25, 2004 -- Volume 85, Issue 17, pp. 3766-3768

Low-temperature, in situ tunable, uniaxial stress measurements in semiconductors using a piezoelectric actuator

Authors: M. Shayegan, K. Karrai, Y. P. Shkolnikov, K. Vakili, E. P. De Poortere, S. Manus

Abstract: We demonstrate the use of a piezoelectric actuator to apply, at low temperatures, uniaxial stress in the plane of a two-dimensional electron system confined to a modulation-doped AlAs quantum well. Via the application of stress, which can be tuned in situ and continuously, we control the energies and occupations of the conduction-band minima and the electronic properties of the electron system.… ▽ More We demonstrate the use of a piezoelectric actuator to apply, at low temperatures, uniaxial stress in the plane of a two-dimensional electron system confined to a modulation-doped AlAs quantum well. Via the application of stress, which can be tuned in situ and continuously, we control the energies and occupations of the conduction-band minima and the electronic properties of the electron system. We also report measurements of the longitudinal and transverse strain versus bias for the actuator at 300, 77, and 4.2 K. A pronounced hysteresis is observed at 300 and 77 K, while at 4.2 K, strain is nearly linear and shows very little hysteresis with the applied bias. △ Less

Submitted 29 November, 2004; originally announced November 2004.

Comments: 2 figures

Journal ref: Applied Physics Letters, Vol. 83, No. 25, pp. 5235-5237, 22 December 2003

Spin Polarization Dependence of the Coulomb Drag at Large $r_{s}$

Authors: R. Pillarisetty, H. Noh, E. Tutuc, E. P. De Poortere, D. C. Tsui, M. Shayegan

Abstract: We find that the temperature dependence of the drag resistivity ($ρ_{D}$) between two dilute two-dimensional hole systems exhibits an unusual dependence upon spin polarization. Near the apparent metal-insulator transition, the temperature dependence of the drag, given by $T^α$, weakens with the application of a parallel magnetic field ($B_{||}$), with $α$ saturating at half its zero field value… ▽ More We find that the temperature dependence of the drag resistivity ($ρ_{D}$) between two dilute two-dimensional hole systems exhibits an unusual dependence upon spin polarization. Near the apparent metal-insulator transition, the temperature dependence of the drag, given by $T^α$, weakens with the application of a parallel magnetic field ($B_{||}$), with $α$ saturating at half its zero field value for $B_{||} > B^{*}$, where $B^{*}$ is the polarization field. Furthermore, we find that $α$ is roughly 2 at the parallel field induced metal-insulator transition, and that the temperature dependence of $ρ_{D}/T^{2}$ at different $B_{||}$ looks strikingly similar to that found in the single layer resistivity. In contrast, at higher densities, far from the zero field transition, the temperature dependence of the drag is roughly independent of spin polarization, with $α$ remaining close to 2, as expected from a simple Fermi liquid picture. △ Less

Submitted 1 July, 2004; originally announced July 2004.

Comments: 4 pages, 5 figures

Spin susceptibility of two-dimensional electrons in narrow AlAs quantum wells

Authors: K. Vakili, Y. P. Shkolnikov, E. Tutuc, E. P. De Poortere, M. Shayegan

Abstract: We report measurements of the spin susceptibility in dilute two-dimensional electrons confined to a 45$Å$ wide AlAs quantum well. The electrons in this well occupy an out-of-plane conduction-band valley, rendering a system similar to two-dimensional electrons in Si-MOSFETs but with only one valley occupied. We observe an enhancement of the spin susceptibility over the band value that increases a… ▽ More We report measurements of the spin susceptibility in dilute two-dimensional electrons confined to a 45$Å$ wide AlAs quantum well. The electrons in this well occupy an out-of-plane conduction-band valley, rendering a system similar to two-dimensional electrons in Si-MOSFETs but with only one valley occupied. We observe an enhancement of the spin susceptibility over the band value that increases as the density is decreased, following closely the prediction of quantum Monte Carlo calculations and continuing at finite values through the metal-insulator transition. △ Less

Submitted 16 March, 2004; v1 submitted 6 March, 2004; originally announced March 2004.

Comments: 4+ pages, 4 figures. Dotted line added to Fig. 4(a) to clarify the QMC calculation

Journal ref: Phys. Rev. Lett. 92, 226401 (2004)

Dependence of spin susceptibility of a two-dimensional electron system on the valley degree of freedom

Authors: Y. P. Shkolnikov, K. Vakili, E. P. De Poortere, M. Shayegan

Abstract: We report measurements of the spin susceptibility, $χ\propto g_v g^*m^*$, in an AlAs two-dimensional electron system where, via the application of in-plane stress, we transfer electrons from one conduction-band valley to another ($g_v$ is the valley degeneracy, and $m^*$ and $g^*$ are the electron effective mass and g-factor). At a given density, when the two valleys are equally populated (… ▽ More We report measurements of the spin susceptibility, $χ\propto g_v g^*m^*$, in an AlAs two-dimensional electron system where, via the application of in-plane stress, we transfer electrons from one conduction-band valley to another ($g_v$ is the valley degeneracy, and $m^*$ and $g^*$ are the electron effective mass and g-factor). At a given density, when the two valleys are equally populated ($g_v=2$), the measured $g^*m^*$ is smaller than when only one valley is occupied ($g_v=1$). This observation counters the common assumption that a two-valley two-dimensional system is effectively more dilute than a single-valley system because of its smaller Fermi energy. △ Less

Submitted 15 February, 2004; originally announced February 2004.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. Lett. 92, 246804 (2004)

Coulomb Drag near the metal-insulator transition in two-dimensions

Authors: R. Pillarisetty, H. Noh, E. Tutuc, E. P. De Poortere, K. Lai, D. C. Tsui, M. Shayegan

Abstract: We studied the drag resistivity between dilute two-dimensional hole systems, near the apparent metal-insulator transition. We find the deviations from the $T^{2}$ dependence of the drag to be independent of layer spacing and correlated with the metalliclike behavior in the single layer resistivity, suggesting they both arise from the same origin. In addition, layer spacing dependence measurement… ▽ More We studied the drag resistivity between dilute two-dimensional hole systems, near the apparent metal-insulator transition. We find the deviations from the $T^{2}$ dependence of the drag to be independent of layer spacing and correlated with the metalliclike behavior in the single layer resistivity, suggesting they both arise from the same origin. In addition, layer spacing dependence measurements suggest that while the screening properties of the system remain relatively independent of temperature, they weaken significantly as the carrier density is reduced. Finally, we demonstrate that the drag itself significantly enhances the metallic $T$ dependence in the single layer resistivity. △ Less

Submitted 6 December, 2004; v1 submitted 13 February, 2004; originally announced February 2004.

Comments: 6 pages, 5 figures; revisions to text, to appear in Phys. Rev. B

Ballistic transport in AlAs two-dimensional electrons

Authors: O. Gunawan, Y. P. Shkolnikov, E. P. De Poortere, E. Tutuc, M. Shayegan

Abstract: We report the observation of commensurability oscillations in an AlAs two-dimensional electron system where two conduction-band valleys with elliptical in-plane Fermi contours are occupied. The Fourier power spectrum of the oscillations shows two frequency components consistent with those expected for the Fermi contours of the two valleys. From an analysis of the spectra we deduce… ▽ More We report the observation of commensurability oscillations in an AlAs two-dimensional electron system where two conduction-band valleys with elliptical in-plane Fermi contours are occupied. The Fourier power spectrum of the oscillations shows two frequency components consistent with those expected for the Fermi contours of the two valleys. From an analysis of the spectra we deduce $m_l/m_t=5.2\pm0.5$ for the ratio of the longitudinal and transverse electron effective masses. △ Less

Submitted 9 February, 2004; originally announced February 2004.

Comments: 5 pages, 4 figures, submitted for publication

A Laterally Modulated 2D Electron System in the Extreme Quantum Limit

Authors: Sorin Melinte, Mona Berciu, C. Zhou, E. Tutuc, S. J. Papadakis, C. Harrison, E. P. De Poortere, Mingshaw Wu, P. M. Chaikin, M. Shayegan, R. N. Bhatt, R. A. Register

Abstract: We report on magnetotransport of a two-dimensional electron system (2DES), located 32 nm below the surface, with a surface superlattice gate structure of periodicity 39 nm imposing a periodic modulation of its potential. For low Landau level fillings $ν$, the diagonal resistivity displays a rich pattern of fluctuations, even though the disorder dominates over the periodic modulation. Theoretical… ▽ More We report on magnetotransport of a two-dimensional electron system (2DES), located 32 nm below the surface, with a surface superlattice gate structure of periodicity 39 nm imposing a periodic modulation of its potential. For low Landau level fillings $ν$, the diagonal resistivity displays a rich pattern of fluctuations, even though the disorder dominates over the periodic modulation. Theoretical arguments based on the combined effects of the long-wavelength, strong disorder and the short-wavelength, weak periodic modulation present in the 2DES qualitatively explain the data. △ Less

Submitted 17 November, 2003; originally announced November 2003.

Comments: 4 pages, 5 figures. to appear in Phys. Rev. Lett

A Hybrid Al(0.10)Ga(0.90)As/AlAs Bilayer Electron System

Authors: E. P. De Poortere, M. Shayegan

Abstract: We have fabricated a device composed of two closely coupled two-dimensional electron systems, one of which resides within an AlAs quantum well (QW) at the X point of the Brillouin zone (BZ), while the other is contained at the $Γ$ point of the BZ in the alloy Al_{0.10}Ga_{0.90}As, grown directly below the AlAs QW. The electronic properties of these two systems are strongly asymmetric: the respec… ▽ More We have fabricated a device composed of two closely coupled two-dimensional electron systems, one of which resides within an AlAs quantum well (QW) at the X point of the Brillouin zone (BZ), while the other is contained at the $Γ$ point of the BZ in the alloy Al_{0.10}Ga_{0.90}As, grown directly below the AlAs QW. The electronic properties of these two systems are strongly asymmetric: the respective cyclotron masses in the AlAs and the Al_{0.10}Ga_{0.90}As layers, measured in units of the free electron mass, are 0.46 and 0.07, while the effective electron g-factors are approximately 8.5 and 0. With the help of front and back gates, we can confine mobile carriers to either or both of the two QWs, as confirmed by magnetotransport measurements. △ Less

Submitted 20 October, 2003; v1 submitted 17 October, 2003; originally announced October 2003.

Comments: 4 pages, 3 figures

Realization of an Interacting Two-Valley AlAs Bilayer System

Authors: K. Vakili, Y. P. Shkolnikov, E. Tutuc, E. P. De Poortere, M. Shayegan

Abstract: By using different widths for two AlAs quantum wells comprising a bilayer system, we force the X-point conduction-band electrons in the two layers to occupy valleys with different Fermi contours, electron effective masses, and g-factors. Since the occupied valleys are at different X-points of the Brillouin zone, the interlayer tunneling is negligibly small despite the close electron layer spacin… ▽ More By using different widths for two AlAs quantum wells comprising a bilayer system, we force the X-point conduction-band electrons in the two layers to occupy valleys with different Fermi contours, electron effective masses, and g-factors. Since the occupied valleys are at different X-points of the Brillouin zone, the interlayer tunneling is negligibly small despite the close electron layer spacing. We demonstrate the realization of this system via magneto-transport measurements and the observation of a phase-coherent, bilayer $ν$=1 quantum Hall state flanked by a reentrant insulating phase. △ Less

Submitted 16 September, 2003; originally announced September 2003.

Comments: 5 pages

Journal ref: Phys. Rev. Lett. 92, 186404 (2004)

Layer charge instability in unbalanced bilayer systems in the quantum Hall regime

Authors: E. Tutuc, R. Pillarisetty, S. Melinte, E. P. De Poortere, M. Shayegan

Abstract: Measurements in GaAs hole bilayers with unequal layer densities reveal a pronounced magneto-resistance hysteresis at the magnetic field positions where either the majority or minority layer is at Landau level filling factor one. At a fixed field in the hysteretic regions, the resistance exhibits an unusual time dependence, consisting of random, bidirectional jumps followed by slow relaxations. T… ▽ More Measurements in GaAs hole bilayers with unequal layer densities reveal a pronounced magneto-resistance hysteresis at the magnetic field positions where either the majority or minority layer is at Landau level filling factor one. At a fixed field in the hysteretic regions, the resistance exhibits an unusual time dependence, consisting of random, bidirectional jumps followed by slow relaxations. These anomalies are apparently caused by instabilities in the charge distribution of the two layers. △ Less

Submitted 5 June, 2003; originally announced June 2003.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B 68, 201308 (2003)

Critical Resistance of the Quantum Hall Ferromagnet in AlAs 2D Electrons

Authors: E. P. De Poortere, E. Tutuc, M. Shayegan

Abstract: Magnetic transitions in AlAs two-dimensional electrons give rise to sharp resistance spikes within the quantum Hall effect. Such spikes are likely caused by carrier scattering at magnetic domain walls below the Curie temperature. We report a critical behavior in the temperature dependence of the spike width and amplitude, from which we deduce the Curie temperature of the quantum Hall ferromagnet… ▽ More Magnetic transitions in AlAs two-dimensional electrons give rise to sharp resistance spikes within the quantum Hall effect. Such spikes are likely caused by carrier scattering at magnetic domain walls below the Curie temperature. We report a critical behavior in the temperature dependence of the spike width and amplitude, from which we deduce the Curie temperature of the quantum Hall ferromagnet. Our data also reveal that the Curie temperature increases monotonically with carrier density. △ Less

Submitted 23 September, 2003; v1 submitted 23 April, 2003; originally announced April 2003.

Comments: Added a figure & minor corrections to text; to appear in Phys. Rev. Lett

Field-Effect Persistent Photoconductivity

Authors: E. P. De Poortere, Y. P. Shkolnikov, M. Shayegan

Abstract: We report a persistent increase or decrease in the two-dimensional electron density of AlAs or GaAs quantum wells flanked by AlGaAs barriers, brought about by illuminating the samples at T ~ 4 K while simultaneously applying a voltage bias between a back gate and the two-dimensional electron gas. Control of the final carrier density is achieved by tuning the back gate bias during illumination. F… ▽ More We report a persistent increase or decrease in the two-dimensional electron density of AlAs or GaAs quantum wells flanked by AlGaAs barriers, brought about by illuminating the samples at T ~ 4 K while simultaneously applying a voltage bias between a back gate and the two-dimensional electron gas. Control of the final carrier density is achieved by tuning the back gate bias during illumination. Furthermore, the strength of the persistent photoconductivity depends on the Al mole fraction in the back Al_{x}Ga_{1-x}As barrier, and is largest at $x \simeq 0.4$. △ Less

Submitted 22 February, 2003; v1 submitted 20 February, 2003; originally announced February 2003.

Comments: Submitted to Phys. Rev. B

In-Plane Magnetodrag between Dilute Two-Dimensional Systems

Authors: R. Pillarisetty, Hwayong Noh, E. Tutuc, E. P. De Poortere, D. C. Tsui, M. Shayegan

Abstract: We performed in-plane magnetodrag measurements on dilute double layer two-dimensional hole systems, at in-plane magnetic fields that suppress the apparent metallic behavior, and to fields well above those required to fully spin polarize the system. When compared to the single layer magnetoresistance, the magnetodrag exhibits exactly the same qualitative behavior. In addition, we have found that… ▽ More We performed in-plane magnetodrag measurements on dilute double layer two-dimensional hole systems, at in-plane magnetic fields that suppress the apparent metallic behavior, and to fields well above those required to fully spin polarize the system. When compared to the single layer magnetoresistance, the magnetodrag exhibits exactly the same qualitative behavior. In addition, we have found that the enhancement to the drag from the in-plane field exhibits a strong maximum when both layer densities are matched. △ Less

Submitted 20 May, 2003; v1 submitted 14 January, 2003; originally announced January 2003.

Comments: 4 pages, 3 figures; minor corrections. Accepted in Phys. Rev. Lett

Role of finite layer thickness in spin-polarization of GaAs 2D electrons in strong parallel magnetic fields

Authors: E. Tutuc, S. Melinte, E. P. De Poortere, M. Shayegan, R. Winkler

Abstract: We report measurements and calculations of the spin-polarization, induced by a parallel magnetic field, of interacting, dilute, two-dimensional electron systems confined to GaAs/AlGaAs heterostructures. The results reveal the crucial role the non-zero electron layer thickness plays: it causes a deformation of the energy surface in the presence of a parallel field, leading to enhanced values for… ▽ More We report measurements and calculations of the spin-polarization, induced by a parallel magnetic field, of interacting, dilute, two-dimensional electron systems confined to GaAs/AlGaAs heterostructures. The results reveal the crucial role the non-zero electron layer thickness plays: it causes a deformation of the energy surface in the presence of a parallel field, leading to enhanced values for the effective mass and g-factor and a non-linear spin-polarization with field. △ Less

Submitted 27 January, 2003; v1 submitted 3 January, 2003; originally announced January 2003.

Comments: 4 pages, 4 figures, Fig. 4 has been replaced from the previous version, minor changes in the text

Journal ref: Phys. Rev. B 67, 241309 (2003)

Role of density imbalance in an interacting bilayer hole system

Authors: E. Tutuc, S. Melinte, E. P. De Poortere, R. Pillarisetty, M. Shayegan

Abstract: We study interacting GaAs hole bilayers in the limit of zero tunneling. When the layers have equal densities, we observe a phase coherent bilayer quantum Hall (QH) state at total filling factor $ν=1$, flanked by insulating phases at nearby fillings which suggest the formation of a pinned, bilayer Wigner crystal. As we transfer charge from one layer to another, the insulating phases disappear whi… ▽ More We study interacting GaAs hole bilayers in the limit of zero tunneling. When the layers have equal densities, we observe a phase coherent bilayer quantum Hall (QH) state at total filling factor $ν=1$, flanked by insulating phases at nearby fillings which suggest the formation of a pinned, bilayer Wigner crystal. As we transfer charge from one layer to another, the insulating phases disappear while, surprisingly, the $ν=1$ QH state becomes stronger. Concomitantly, a pronounced hysteresis develops in the longitudinal magnetoresistance at higher fillings, indicative of a first-order quantum phase transition. △ Less

Submitted 5 June, 2003; v1 submitted 27 September, 2002; originally announced September 2002.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. Lett. 91, 076802 (2003)

Magnetic Field Induced Spin Polarization of AlAs Two-dimensional Electrons

Authors: E. P. De Poortere, E. Tutuc, Y. P. Shkolnikov, K. Vakili, M. Shayegan

Abstract: Two-dimensional (2D) electrons in an in-plane magnetic field become fully spin polarized above a field B_P, which we can determine from the in-plane magnetoresistance. We perform such measurements in modulation-doped AlAs electron systems, and find that the field B_P increases approximately linearly with 2D electron density. These results imply that the product |g*|m*, where g* is the effective… ▽ More Two-dimensional (2D) electrons in an in-plane magnetic field become fully spin polarized above a field B_P, which we can determine from the in-plane magnetoresistance. We perform such measurements in modulation-doped AlAs electron systems, and find that the field B_P increases approximately linearly with 2D electron density. These results imply that the product |g*|m*, where g* is the effective g-factor and m* the effective mass, is a constant essentially independent of density. While the deduced |g*|m* is enhanced relative to its band value by a factor of ~ 4, we see no indication of its divergence as 2D density approaches zero. These observations are at odds with results obtained in Si-MOSFETs, but qualitatively confirm spin polarization studies of 2D GaAs carriers. △ Less

Submitted 22 August, 2002; originally announced August 2002.

Comments: 4 pages, 5 figures

Valley splitting of AlAs two-dimensional electrons in a perpendicular magnetic field

Authors: Y. P. Shkolnikov, E. P. De Poortere, E. Tutuc, M. Shayegan

Abstract: By measuring the angles at which the Landau levels overlap in tilted magnetic fields (the coincidence method), we determine the splitting of the conduction-band valleys in high-mobility two-dimensional (2D) electrons confined to AlAs quantum wells. The data reveal that, while the valleys are nearly degenerate in the absence of magnetic field, they split as a function of perpendicular magnetic fi… ▽ More By measuring the angles at which the Landau levels overlap in tilted magnetic fields (the coincidence method), we determine the splitting of the conduction-band valleys in high-mobility two-dimensional (2D) electrons confined to AlAs quantum wells. The data reveal that, while the valleys are nearly degenerate in the absence of magnetic field, they split as a function of perpendicular magnetic field. The splitting appears to depend primarily on the magnitude of the perpendicular component of the magnetic field, suggesting electron-electron interaction as its origin. △ Less

Submitted 17 July, 2002; originally announced July 2002.

Comments: Revtex4: 4 pages, 4 figures. Submitted for publication

Journal ref: Phys. Rev. Lett. 89, 226805 (2002)

Spin polarization and transition from metallic to insulating behavior in 2D systems

Authors: E. Tutuc, E. P. De Poortere, S. J. Papadakis, M. Shayegan

Abstract: We have made quantitative measurements of the spin polarization of two-dimensional (2D) GaAs (100) electrons and GaAs (311)A holes, as a function of an in-plane magnetic field. The functional form of the in-plane magnetoresistance is shown to be intimately related to the spin polarization. Moreover, for three different 2D systems, namely GaAs (100) electrons, GaAs (311)A holes, and AlAs (411)B e… ▽ More We have made quantitative measurements of the spin polarization of two-dimensional (2D) GaAs (100) electrons and GaAs (311)A holes, as a function of an in-plane magnetic field. The functional form of the in-plane magnetoresistance is shown to be intimately related to the spin polarization. Moreover, for three different 2D systems, namely GaAs (100) electrons, GaAs (311)A holes, and AlAs (411)B electrons, the temperature dependence of the in-plane magnetoresistance reveals that their behavior turns from metallic to insulating before they are fully spin polarized. △ Less

Submitted 11 April, 2002; originally announced April 2002.

Comments: 3 pages, 3 figures; presented at the MSS10 conference, to be published in Physica E

Aharonov-Bohm Oscillations with Spin: Evidence for Berry's Phase

Authors: Jeng-Bang Yau, E. P. De Poortere, M. Shayegan

Abstract: We report a study of the Aharonov-Bohm effect, the oscillations of the resistance of a mesoscopic ring as a function of a perpendicular magnetic field, in a GaAs two-dimensional hole system with a strong spin-orbit interaction. The Fourier spectra of the oscillations reveal extra structure near the main peak whose frequency corresponds to the magnetic flux enclosed by the ring. A comparison of t… ▽ More We report a study of the Aharonov-Bohm effect, the oscillations of the resistance of a mesoscopic ring as a function of a perpendicular magnetic field, in a GaAs two-dimensional hole system with a strong spin-orbit interaction. The Fourier spectra of the oscillations reveal extra structure near the main peak whose frequency corresponds to the magnetic flux enclosed by the ring. A comparison of the experimental data with results of simulations demonstrates that the origin of the extra structure is the geometric (Berry) phase acquired by the carrier spin as it travels around the ring. △ Less

Submitted 27 February, 2002; originally announced February 2002.

Comments: To be published in Physical Review Letters

Journal ref: Physical Review Letters 88, 146801 (2002)

Frictional Drag between Two Dilute Two-Dimensional Hole Layers

Authors: R. Pillarisetty, Hwayong Noh, D. C. Tsui, E. P. De Poortere, E. Tutuc, M. Shayegan

Abstract: We report drag measurements on dilute double layer two-dimensional hole systems in the regime of r_s=19~39. We observed a strong enhancement of the drag over the simple Boltzmann calculations of Coulomb interaction, and deviations from the T^2 dependence which cannot be explained by phonon-mediated, plasmon-enhanced, or disorder-related processes. We suggest that this deviation results from inte… ▽ More We report drag measurements on dilute double layer two-dimensional hole systems in the regime of r_s=19~39. We observed a strong enhancement of the drag over the simple Boltzmann calculations of Coulomb interaction, and deviations from the T^2 dependence which cannot be explained by phonon-mediated, plasmon-enhanced, or disorder-related processes. We suggest that this deviation results from interaction effects in the dilute regime. △ Less

Submitted 22 May, 2002; v1 submitted 5 February, 2002; originally announced February 2002.

Comments: 4 pages, 3 figures, accepted in Phys. Rev. Lett. Added single layer transport data

Journal ref: Phys. Rev. Lett. 89, 016805 (2002)

Low-field magnetoresistance in GaAs 2D holes

Authors: S. J. Papadakis, E. P. De Poortere, H. C. Manoharan, J. B. Yau, M. Shayegan, S. A. Lyon

Abstract: We report low-field magnetotransport data in two-dimensional hole systems in GaAs/AlGaAs heterostructures and quantum wells, in a large density range, $2.5 \times 10^{10} \leq p \leq 4.0 \times 10^{11}$ cm$^{-2}$, with primary focus on samples grown on (311)A GaAs substrates. At high densities, $p \gtrsim 1 \times 10^{11}$ cm$^{-2}$, we observe a remarkably strong positive magnetoresistance. It… ▽ More We report low-field magnetotransport data in two-dimensional hole systems in GaAs/AlGaAs heterostructures and quantum wells, in a large density range, $2.5 \times 10^{10} \leq p \leq 4.0 \times 10^{11}$ cm$^{-2}$, with primary focus on samples grown on (311)A GaAs substrates. At high densities, $p \gtrsim 1 \times 10^{11}$ cm$^{-2}$, we observe a remarkably strong positive magnetoresistance. It appears in samples with an anisotropic in-plane mobility and predominantly along the low-mobility direction, and is strongly dependent on the perpendicular electric field and the resulting spin-orbit interaction induced spin-subband population difference. A careful examination of the data reveals that the magnetoresistance must result from a combination of factors including the presence of two spin-subbands, a corrugated quantum well interface which leads to the mobility anisotropy, and possibly weak anti-localization. None of these factors can alone account for the observed positive magnetoresistance. We also present the evolution of the data with density: the magnitude of the positive magnetoresistance decreases with decreasing density until, at the lowest density studied ($p = 2.5 \times 10^{10}$ cm$^{-2}$), it vanishes and is replaced by a weak negative magnetoresistance. △ Less

Submitted 26 January, 2002; originally announced January 2002.

Comments: 8 pages, 8 figures

Journal ref: Phys. Rev. B 65, 245312 (2002)

Resistance Spikes at Transitions between Quantum Hall Ferromagnets

Authors: E. P. De Poortere, E. Tutuc, S. J. Papadakis, M. Shayegan

Abstract: We report a new manifestation of first-order magnetic transitions in two-dimensional electron systems. This phenomenon occurs in aluminum arsenide quantum wells with sufficiently low carrier densities and appears as a set of hysteretic spikes in the resistance of a sample placed in crossed parallel and perpendicular magnetic fields, each spike occurring at the transition between states with diff… ▽ More We report a new manifestation of first-order magnetic transitions in two-dimensional electron systems. This phenomenon occurs in aluminum arsenide quantum wells with sufficiently low carrier densities and appears as a set of hysteretic spikes in the resistance of a sample placed in crossed parallel and perpendicular magnetic fields, each spike occurring at the transition between states with different partial magnetizations. Our experiments thus indicate that the presence of magnetic domains at the transition starkly increases dissipation, an effect also suspected in other ferromagnetic materials. Analysis of the positions of the transition spikes allows us to deduce the change in exchange-correlation energy across the magnetic transition, which in turn will help improve our understanding of metallic ferromagnetism. △ Less

Submitted 19 December, 2000; originally announced December 2000.

Comments: 6 pages, 3 figures

Journal ref: Science 290, 1546 (2000)

In-plane magnetic field-induced spin polarization and transition to insulating behavior in two-dimensional hole systems

Authors: E. Tutuc, E. P. De Poortere, S. J. Papadakis, M. Shayegan

Abstract: Using a novel technique, we make quantitative measurements of the spin polarization of dilute (3.4 to 6.8*10^{10} cm^{-2}) GaAs (311)A two-dimensional holes as a function of an in-plane magnetic field. As the field is increased the system gradually becomes spin polarized, with the degree of spin polarization depending on the orientation of the field relative to the crystal axes. Moreover, the be… ▽ More Using a novel technique, we make quantitative measurements of the spin polarization of dilute (3.4 to 6.8*10^{10} cm^{-2}) GaAs (311)A two-dimensional holes as a function of an in-plane magnetic field. As the field is increased the system gradually becomes spin polarized, with the degree of spin polarization depending on the orientation of the field relative to the crystal axes. Moreover, the behavior of the system turns from metallic to insulating \textit{before} it is fully spin polarized. The minority-spin population at the transition is ~8*10^{9} cm^{-2}, close to the density below which the system makes a transition to an insulating state in the absence of a magnetic field. △ Less

Submitted 7 December, 2000; originally announced December 2000.

Comments: 4 pages with figures

Journal ref: Phys. Rev. Lett. 86, 2858 (2001)

Confinement symmetry, mobility anisotropy, and metallic behavior in (311)A GaAs 2D holes

Authors: S. J. Papadakis, E. P. De Poortere, M. Shayegan

Abstract: We study two dimensional hole systems confined to GaAs quantum wells grown on the (311)A surface of GaAs substrates. Such samples exhibit an in-plane mobility anisotropy. At constant 2D hole density, we vary the symmetry of the quantum well potential and measure the temperature dependence of the resistivity along two different current directions, in a regime where the samples exhibit metallic be… ▽ More We study two dimensional hole systems confined to GaAs quantum wells grown on the (311)A surface of GaAs substrates. Such samples exhibit an in-plane mobility anisotropy. At constant 2D hole density, we vary the symmetry of the quantum well potential and measure the temperature dependence of the resistivity along two different current directions, in a regime where the samples exhibit metallic behavior. The symmetry has a significant and non-trivial effect on the metallic behavior. Moreover, differences between the temperature-dependence of the resistivity along the two mobility directions point to specific scattering mechanisms being important in the expression of the metallic behavior. △ Less

Submitted 2 August, 2000; originally announced August 2000.

Comments: 4 pages with figs

Journal ref: Phys. Rev. B 62, 15375 (2000)

Spin-splitting in GaAs 2D holes

Authors: S. J. Papadakis, E. P. De Poortere, M. Shayegan, R. Winkler

Abstract: We present quantitative measurements and calculations of the spin-orbit induced zero-magnetic-field spin-splitting in two-dimensional (2D) hole systems in modulation-doped GaAs (311)A quantum wells. The results show that the splitting is large and tunable. In particular, via a combination of back- and front-gate biases, we can tune the splitting while kee** the 2D hole density constant. The da… ▽ More We present quantitative measurements and calculations of the spin-orbit induced zero-magnetic-field spin-splitting in two-dimensional (2D) hole systems in modulation-doped GaAs (311)A quantum wells. The results show that the splitting is large and tunable. In particular, via a combination of back- and front-gate biases, we can tune the splitting while kee** the 2D hole density constant. The data also reveal a surprising result regarding the magnetoresistance (Shubnikov-de Haas) oscillations in a 2D system with spin-split energy bands: the frequencies of the oscillations are {\it not} simply related to the population of the spin-subbands. Next we concentrate on the metallic-like behavior observed in these 2D holes and its relation to spin-splitting. The data indicate that the metallic behavior is more pronounced when two spin-subbands with unequal populations are occupied. Our measurements of the magnetoresistance of these 2D hole systems with an in-plane magnetic field corroborate this conclusion: while the system is metallic at zero magnetic field, it turns insulating when one of the spin-subbands is depopulated at high magnetic field. △ Less

Submitted 30 June, 2000; originally announced June 2000.

Comments: To be published in Physica E, as part of the proceedings of the 11th International Winterschool on New Developments in Solid State Physics held in Mauterndorf, Austria, February, 2000

Journal ref: Physica E 9, 31 (2001)

Highly anisotropic g-factor of two-dimensional hole systems

Authors: R. Winkler, S. J. Papadakis, E. P. De Poortere, M. Shayegan

Abstract: Coupling the spin degree of freedom to the anisotropic orbital motion of two-dimensional (2D) hole systems gives rise to a highly anisotropic Zeeman splitting with respect to different orientations of an in-plane magnetic field B relative to the crystal axes. This mechanism has no analogue in the bulk band structure. We obtain good, qualitative agreement between theory and experimental data, tak… ▽ More Coupling the spin degree of freedom to the anisotropic orbital motion of two-dimensional (2D) hole systems gives rise to a highly anisotropic Zeeman splitting with respect to different orientations of an in-plane magnetic field B relative to the crystal axes. This mechanism has no analogue in the bulk band structure. We obtain good, qualitative agreement between theory and experimental data, taken in GaAs 2D hole systems grown on (113) substrates, showing the anisotropic depopulation of the upper spin subband as a function of in-plane B. △ Less

Submitted 28 May, 2000; originally announced May 2000.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. Lett. 85, 4574 (2000)

Anisotropic magnetoresistance of GaAs two-dimensional holes

Authors: S. J. Papadakis, E. P. De Poortere, M. Shayegan, R. Winkler

Abstract: Experiments on high-quality GaAs (311)A two-dimensional holes at low temperatures reveal a remarkable dependence of the magnetoresistance, measured with an in-plane magnetic field ($B$), on the direction of $B$ relative to both the crystal axes and the current direction. The magnetoresistance features, and in particular the value of $B$ above which the resistivity exhibits an insulating behavior… ▽ More Experiments on high-quality GaAs (311)A two-dimensional holes at low temperatures reveal a remarkable dependence of the magnetoresistance, measured with an in-plane magnetic field ($B$), on the direction of $B$ relative to both the crystal axes and the current direction. The magnetoresistance features, and in particular the value of $B$ above which the resistivity exhibits an insulating behavior, depend on the orientation of $B$. To explain the data, the anisotropic band structure of the holes and a re-population of the spin-subbands in the presence of $B$, as well as the coupling of the orbital motion to $B$, need to be taken into account. △ Less

Submitted 21 May, 2000; v1 submitted 16 November, 1999; originally announced November 1999.

Comments: 4 pages, 5 figures. To appear in PRL 84

Journal ref: Phys. Rev. Lett 84, 5592 (2000)

Anomalous magneto-oscillations in two-dimensional systems

Authors: R. Winkler, S. J. Papadakis, E. P. De Poortere, M. Shayegan

Abstract: The frequencies of Shubnikov-de Haas oscillations have long been used to measure the unequal population of spin-split two-dimensional subbands in inversion asymmetric systems. We report self-consistent numerical calculations and experimental results which indicate that these oscillations are not simply related to the zero-magnetic-field spin-subband densities. The frequencies of Shubnikov-de Haas oscillations have long been used to measure the unequal population of spin-split two-dimensional subbands in inversion asymmetric systems. We report self-consistent numerical calculations and experimental results which indicate that these oscillations are not simply related to the zero-magnetic-field spin-subband densities. △ Less

Submitted 1 October, 1999; v1 submitted 14 September, 1999; originally announced September 1999.

Comments: 4 pages, 3 figures; changed content (clarifications)

Report number: tfkp-99-2

Journal ref: Phys. Rev. Lett. 84, 713 (2000)

The Effect of Spin Splitting on the Metallic Behavior of a Two-Dimensional System

Authors: S. J. Papadakis, E. P. De Poortere, H. C. Manoharan, M. Shayegan, R. Winkler

Abstract: Experiments on a constant-density two-dimensional hole system in a GaAs quantum well reveal that the metallic behavior observed in the zero-magnetic-field temperature dependence of the resistivity depends on the symmetry of the confinement potential and the resulting spin-splitting of the valence band. Experiments on a constant-density two-dimensional hole system in a GaAs quantum well reveal that the metallic behavior observed in the zero-magnetic-field temperature dependence of the resistivity depends on the symmetry of the confinement potential and the resulting spin-splitting of the valence band. △ Less

Submitted 30 March, 1999; originally announced March 1999.

Journal ref: SCIENCE 283, 2056 (1999)

Anomalous spin-splitting of two-dimensional electrons in an AlAs Quantum Well

Authors: S. J. Papadakis, E. P. De Poortere, M. Shayegan

Abstract: We measure the effective Lande g-factor of high-mobility two-dimensional electrons in a modulation-doped AlAs quantum well by tilting the sample in a magnetic field and monitoring the evolution of the magnetoresistance oscillations. The data reveal that |g| = 9.0, which is much enhanced with respect to the reported bulk value of 1.9. Surprisingly, in a large range of magnetic field and Landau le… ▽ More We measure the effective Lande g-factor of high-mobility two-dimensional electrons in a modulation-doped AlAs quantum well by tilting the sample in a magnetic field and monitoring the evolution of the magnetoresistance oscillations. The data reveal that |g| = 9.0, which is much enhanced with respect to the reported bulk value of 1.9. Surprisingly, in a large range of magnetic field and Landau level fillings, the value of the enhanced g-factor appears to be constant. △ Less

Submitted 14 August, 1998; originally announced August 1998.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. B 59, R12743 (1999)