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Graphene magnetoresistance control by photoferroelectric substrate
Authors:
K. Maity,
J. -F. Dayen,
B. Doudin,
R. Gumeniuk,
B. Kundys
Abstract:
Ultralow dimensionality of 2D layers magnifies their sensitivity to adjacent charges enabling even postprocessing electric control of multifunctional structures. However, functionalizing 2D layers remains an important challenge for on-demand device property exploitation. Here we report that an electrical and even fully optical way to control and write modifications to the magnetoresistive response…
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Ultralow dimensionality of 2D layers magnifies their sensitivity to adjacent charges enabling even postprocessing electric control of multifunctional structures. However, functionalizing 2D layers remains an important challenge for on-demand device property exploitation. Here we report that an electrical and even fully optical way to control and write modifications to the magnetoresistive response of CVD-deposited graphene is achievable through the electrostatics of the photoferroelectric substrate. For electrical control, the ferroelectric polarization switch modifies graphene magnetoresistance by 67% due to a Fermi level shift with related modification in charge mobility. A similar function is also attained entirely by the bandgap light due to the substrate photovoltaic effect. Moreover, an all-optical way to imprint and recover graphene magnetoresistance by light is reported as well as magnetic control of graphene transconductance. These findings extend photoferroelectric control in 2D structures to new a magnetic dimension and advance wireless operation for sensors and field-effect transistors.
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Submitted 6 May, 2024;
originally announced May 2024.
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Single wavelength operating neuromorphic device based on a graphene-ferroelectric transistor
Authors:
K. Maity,
J. -F. Dayen,
B. Doudin,
R. Gumeniuk,
B. Kundys
Abstract:
As global data generation continues to rise, there is an increasing demand for revolutionary in-memory computing methodologies and efficient machine learning solutions. Despite recent progress in electrical and electro-optical simulations of machine learning devices, the all-optical nonthermal function remains challenging, with single wavelength operation still elusive. Here we report on an optica…
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As global data generation continues to rise, there is an increasing demand for revolutionary in-memory computing methodologies and efficient machine learning solutions. Despite recent progress in electrical and electro-optical simulations of machine learning devices, the all-optical nonthermal function remains challenging, with single wavelength operation still elusive. Here we report on an optical and monochromatic way of neuromorphic signal processing for brain-inspired functions, eliminating the need for electrical pulses. Multilevel synaptic potentiation-depression cycles are successfully achieved optically by leveraging photovoltaic charge generation and polarization within the photoferroelectric substrate interfaced with the graphene sensor. Furthermore, the demonstrated low-power prototype device is able to reproduce exact signal profile of brain tissues yet with more than two orders of magnitude faster response. The reported properties should trigger all-optical and low power artificial neuromorphic development based on photoferroelectric structures.
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Submitted 3 January, 2024;
originally announced January 2024.
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Reconfigurable Multifunctional van der Waals Ferroelectric Devices and Logic Circuits
Authors:
Ankita Ram,
Krishna Maity,
Cédric Marchand,
Aymen Mahmoudi,
Aseem Rajan Kshirsagar,
Mohamed Soliman,
Takashi Taniguchi,
Kenji Watanabe,
Bernard Doudin,
Abdelkarim Ouerghi,
Sven Reichardt,
Ian O'Connor,
Jean-Francois Dayen
Abstract:
In this work, we demonstrate the suitability of Reconfigurable Ferroelectric Field-Effect- Transistors (Re-FeFET) for designing non-volatile reconfigurable logic-in-memory circuits with multifunctional capabilities. Modulation of the energy landscape within a homojunction of a 2D tungsten diselenide (WSe$_2$) layer is achieved by independently controlling two split-gate electrodes made of a ferroe…
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In this work, we demonstrate the suitability of Reconfigurable Ferroelectric Field-Effect- Transistors (Re-FeFET) for designing non-volatile reconfigurable logic-in-memory circuits with multifunctional capabilities. Modulation of the energy landscape within a homojunction of a 2D tungsten diselenide (WSe$_2$) layer is achieved by independently controlling two split-gate electrodes made of a ferroelectric 2D copper indium thiophosphate (CuInP$_2$S$_6$) layer. Controlling the state encoded in the Program Gate enables switching between p, n and ambipolar FeFET operating modes. The transistors exhibit on-off ratios exceeding 10$^6$ and hysteresis windows of up to 10 V width. The homojunction can change from ohmic-like to diode behavior, with a large rectification ratio of 10$^4$. When programmed in the diode mode, the large built-in p-n junction electric field enables efficient separation of photogenerated carriers, making the device attractive for energy harvesting applications. The implementation of the Re-FeFET for reconfigurable logic functions shows how a circuit can be reconfigured to emulate either polymorphic ferroelectric NAND/AND logic-in-memory or electronic XNOR logic with long retention time exceeding 10$^4$ seconds. We also illustrate how a circuit design made of just two Re-FeFETs exhibits high logic expressivity with reconfigurability at runtime to implement several key non-volatile 2-input logic functions. Moreover, the Re-FeFET circuit demonstrates remarkable compactness, with an up to 80% reduction in transistor count compared to standard CMOS design. The 2D van de Waals Re-FeFET devices therefore exhibit groundbreaking potential for both More-than-Moore and beyond-Moore future of electronics, in particular for an energy-efficient implementation of in-memory computing and machine learning hardware, due to their multifunctionality and design compactness.
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Submitted 23 October, 2023;
originally announced October 2023.
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Room-Temperature Anomalous Hall Effect in Graphene in Interfacial Magnetic Proximity with EuO Grown by Topotactic Reduction
Authors:
Satakshi Pandey,
Simon Hettler,
Raul Arenal,
Corinne Bouillet,
Aditi Raman Moghe,
Stephane Berciaud,
Jerome Robert,
Jean Francois Dayen,
David Halley
Abstract:
We show that thin layers of EuO, a ferromagnetic insulator, can be achieved by topotactic reduction under titanium of a Eu2O3 film deposited on top of a graphene template. The reduction process leads to the formation of a 7-nm thick EuO smooth layer, without noticeable structural changes in the underlying chemical vapor deposited (CVD) graphene. The obtained EuO films exhibit ferromagnetism, with…
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We show that thin layers of EuO, a ferromagnetic insulator, can be achieved by topotactic reduction under titanium of a Eu2O3 film deposited on top of a graphene template. The reduction process leads to the formation of a 7-nm thick EuO smooth layer, without noticeable structural changes in the underlying chemical vapor deposited (CVD) graphene. The obtained EuO films exhibit ferromagnetism, with a Curie temperature that decreases with the initially deposited Eu2O3 layer thickness. By adjusting the thickness of the Eu2O3 layer below 7 nm, we promote the formation of EuO at the very graphene interface: the EuO/graphene heterostructure demonstrates the anomalous Hall effect (AHE), which is a fingerprint of proximity-induced spin polarization in graphene. The AHE signal moreover persists above Tc up to 350K due to a robust super-paramagnetic phase in EuO. This original high-temperature magnetic phase is attributed to magnetic polarons in EuO: we propose that the high strain in our EuO films grown on graphene stabilizes the magnetic polarons up to room temperature. This effect is different from the case of bulk EuO in which polarons vanish in the vicinity of the Curie temperature Tc= 69K.
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Submitted 2 September, 2023;
originally announced September 2023.
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Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In$_{2}$Se$_{3}$
Authors:
Geoffroy Kremer,
Aymen Mahmoudi,
Adel M'Foukh,
Meryem Bouaziz,
Mehrdad Rahimi,
Maria Luisa Della Rocca,
Patrick Le Fèvre,
Jean-Francois Dayen,
François Bertran,
Sylvia Matzen,
Marco Pala,
Julien Chaste,
Fabrice Oehler,
Abdelkarim Ouerghi
Abstract:
Two-dimensional (2D) ferroelectric (FE) materials are promising compounds for next-generation nonvolatile memories, due to their low energy consumption and high endurance. Among them, α-In$_{2}$Se$_{3}$ has drawn particular attention due to its in- and out-of-plane ferroelectricity, whose robustness has been demonstrated down to the monolayer limit. This is a relatively uncommon behavior since mos…
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Two-dimensional (2D) ferroelectric (FE) materials are promising compounds for next-generation nonvolatile memories, due to their low energy consumption and high endurance. Among them, α-In$_{2}$Se$_{3}$ has drawn particular attention due to its in- and out-of-plane ferroelectricity, whose robustness has been demonstrated down to the monolayer limit. This is a relatively uncommon behavior since most bulk FE materials lose their ferroelectric character at the 2D limit due to depolarization field. Using angle resolved photoemission spectroscopy (ARPES), we unveil another unusual 2D phenomena appearing in 2H α-In$_{2}$Se$_{3}$ single crystals, the occurrence of a highly metallic two-dimensional electron gas (2DEG) at the surface of vacuum-cleaved crystals. This 2DEG exhibits two confined states which correspond to an electron density of approximatively 10$^{13}$ electrons/cm$^{3}$, also confirmed by thermoelectric measurements. Combination of ARPES and density functional theory (DFT) calculations reveals a direct band gap of energy equal to 1.3 +/- 0.1 eV, with the bottom of the conduction band localized at the center of the Brillouin zone, just below the Fermi level. Such strong n-type do** further supports the quantum confinement of electrons and the formation of the 2DEG.
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Submitted 9 August, 2023;
originally announced August 2023.
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Photovoltaic-ferroelectric materials for the realization of all-optical devices
Authors:
A. Makhort,
R. Gumeniuk,
J. -F. Dayen,
P. Dunne,
U. Burkhardt,
M. Viret,
B. Doudin,
B. Kundys
Abstract:
Following how the electrical transistor revolutionized the field of electronics,the realization of an optical transistor in which the flow of light is controlled optically should open the long-sought era of optical computing and new data processing possibilities. However, such function requires photons to influence each other, an effect which is unnatural in free space. Here it is shown that a fer…
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Following how the electrical transistor revolutionized the field of electronics,the realization of an optical transistor in which the flow of light is controlled optically should open the long-sought era of optical computing and new data processing possibilities. However, such function requires photons to influence each other, an effect which is unnatural in free space. Here it is shown that a ferroelectric and photovoltaic crystal gated optically at the onset of its bandgap energy can act as a photonic transistor. The light-induced charge generation and distribution processes alter the internal electric field and therefore impact the optical transmission with a memory effect and pronounced nonlinearity. The latter results in an optical computing possibility, which does not need to operate coherently. These findings advance efficient room temperature optical transistors, memristors, modulators and all-optical logic circuits.
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Submitted 12 March, 2022;
originally announced March 2022.
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Tuning a sign of magnetoelectric coupling in paramagnetic NH2(CH3)2Al1-xCrx(SO4)*6H2O crystals by metal ion substitution
Authors:
V. Kapustianyk,
Yu. Eliyashevskyy,
Z. Czapla,
V. Rudyk,
R. Serkiz,
N. Ostapenko,
I. Hirnyk,
J. -F. Dayen,
M. Bobnar,
R. Gumeniuk,
B. Kundys
Abstract:
Hybrid organometallic systems offer a wide range of functionalities, including magnetoelectric interactions. However, the ability to design on-demand ME coupling remains challenging despite a variety of host-guest configurations and ME phases coexistence possibilities. Here, we report the effect of metal-ion substitution on the magnetic and electric properties in the paramagnetic ferroelectric DMA…
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Hybrid organometallic systems offer a wide range of functionalities, including magnetoelectric interactions. However, the ability to design on-demand ME coupling remains challenging despite a variety of host-guest configurations and ME phases coexistence possibilities. Here, we report the effect of metal-ion substitution on the magnetic and electric properties in the paramagnetic ferroelectric DMAAS crystals. Doing so we are able to induce and even tune a sign of the ME interactions in the paramagnetic ferroelectric state. Both studied samples with 6.5% and 20% of Cr become paramagnetic, contrary to the initial diamagnetic compound. Due to the isomorphous substitution with Cr the ferroelectric phase transition temperature increases nonlinearly, with the shift being larger for the sample with Cr content of 6.5%. A magnetic field applied along the polar c axis increases ferroelectricity for this sample and shifts Tc to higher values, while inverse effects are observed for sample containing 20% of Cr. The ME coupling coefficient of 1.7ns/m found for a crystal with 20% of Cr is among the highest reported up to now. The observed sign change of ME coupling coefficient with a small change in Cr content paves the way for ME coupling engineering.
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Submitted 29 December, 2017;
originally announced December 2017.
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Conductance oscillations in graphene/nanoclusters hybrid material: towards large area single electron devices
Authors:
Florian Godel,
Louis Donald Notemgnou Mouafo,
Guillaume Froehlicher,
Bernard Doudin,
Stephane Berciaud,
Yves Henry,
Jean-Francois Dayen,
David Halley
Abstract:
Large assemblies of self-organized aluminum nanoclusters embedded in an oxide layer are formed on graphene templates and used to build tunnel-junction devices. Unexpectedly, single-electron-transport behavior with well-defined Coulomb oscillations is observed for a record junction area containing millions of metal islands. Such hybrid materials offer new prospects for single-electron electronics.
Large assemblies of self-organized aluminum nanoclusters embedded in an oxide layer are formed on graphene templates and used to build tunnel-junction devices. Unexpectedly, single-electron-transport behavior with well-defined Coulomb oscillations is observed for a record junction area containing millions of metal islands. Such hybrid materials offer new prospects for single-electron electronics.
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Submitted 28 February, 2017;
originally announced March 2017.
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Voltage-controlled inversion of tunnel magnetoresistance in epitaxial Nickel/Graphene/MgO/Cobalt junctions
Authors:
F. Godel,
M. Venkata Kamalakar,
B. Doudin,
Y. Henry,
D. Halley,
J. -F. Dayen
Abstract:
We report on the fabrication and characterization of vertical spin-valve structures using a thick epitaxial MgO barrier as spacer layer and a graphene-passivated Ni film as bottom ferromagnetic electrode. The devices show robust and scalable tunnel magnetoresistance, with several changes of sign upon varying the applied bias voltage. These findings are explained by a model of phonon-assisted trans…
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We report on the fabrication and characterization of vertical spin-valve structures using a thick epitaxial MgO barrier as spacer layer and a graphene-passivated Ni film as bottom ferromagnetic electrode. The devices show robust and scalable tunnel magnetoresistance, with several changes of sign upon varying the applied bias voltage. These findings are explained by a model of phonon-assisted transport mechanisms that relies on the peculiarity of the band structure and spin density of states at the hybrid graphene|Ni interface.
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Submitted 7 October, 2014;
originally announced October 2014.
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Conductivity in organic semiconductors hybridized with the vacuum field
Authors:
E. Orgiu,
J. George,
J. A. Hutchison,
E. Devaux,
J. F. Dayen,
B. Doudin,
F. Stellacci,
C. Genet,
J. Schachenmayer,
C. Genes,
G. Pupillo,
P. Samori,
T. W. Ebbesen
Abstract:
Organic semiconductors have generated considerable interest for their potential for creating inexpensive and flexible devices easily processed on a large scale [1-11]. However technological applications are currently limited by the low mobility of the charge carriers associated with the disorder in these materials [5-8]. Much effort over the past decades has therefore been focused on optimizing th…
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Organic semiconductors have generated considerable interest for their potential for creating inexpensive and flexible devices easily processed on a large scale [1-11]. However technological applications are currently limited by the low mobility of the charge carriers associated with the disorder in these materials [5-8]. Much effort over the past decades has therefore been focused on optimizing the organisation of the material or the devices to improve carrier mobility. Here we take a radically different path to solving this problem, namely by injecting carriers into states that are hybridized to the vacuum electromagnetic field. These are coherent states that can extend over as many as 10^5 molecules and should thereby favour conductivity in such materials. To test this idea, organic semiconductors were strongly coupled to the vacuum electromagnetic field on plasmonic structures to form polaritonic states with large Rabi splittings ca. 0.7 eV. Conductivity experiments show that indeed the current does increase by an order of magnitude at resonance in the coupled state, reflecting mostly a change in field-effect mobility as revealed when the structure is gated in a transistor configuration. A theoretical quantum model is presented that confirms the delocalization of the wave-functions of the hybridized states and the consequences on the conductivity. While this is a proof-of-principle study, in practice conductivity mediated by light-matter hybridized states is easy to implement and we therefore expect that it will be used to improve organic devices. More broadly our findings illustrate the potential of engineering the vacuum electromagnetic environment to modify and to improve properties of materials.
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Submitted 26 May, 2015; v1 submitted 5 September, 2014;
originally announced September 2014.
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Side-gated transport in FIB-fabricated multilayered graphene nanoribbons
Authors:
Jean-Francois Dayen,
Ather Mahmood,
Dmitry S. Golubev,
Isabelle Roch-Jeune,
Philippe Salles,
Erik Dujardin
Abstract:
In this Letter, we present the patterning, exfoliation and micromanipulation of thin graphitic discs which are subsequently connected and patterned into sub-100nm wide ribbons with a resist-free process using Focused Ion Beam (FIB) lithography and deposition. The electronic transport properties of the double side-gated nanoribbons are then investigated down to 40 K and interpreted with a simple…
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In this Letter, we present the patterning, exfoliation and micromanipulation of thin graphitic discs which are subsequently connected and patterned into sub-100nm wide ribbons with a resist-free process using Focused Ion Beam (FIB) lithography and deposition. The electronic transport properties of the double side-gated nanoribbons are then investigated down to 40 K and interpreted with a simple model of 1D array of tunnelling junctions.
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Submitted 26 January, 2008; v1 submitted 14 December, 2007;
originally announced December 2007.
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Anisotropic Magneto-Thermopower: the Contribution of Interband Relaxation
Authors:
J. -E. Wegrowe,
Q. Anh Nguyen,
M. Al-Barki,
J. -F. Dayen,
T. L. Wade,
H. -J. Drouhin
Abstract:
Spin injection in metallic normal/ferromagnetic junctions is investigated taking into account the anisotropic magnetoresistance (AMR) occurring in the ferromagnetic layer. It is shown, on the basis of a generalized two channel model, that there is an interface resistance contribution due to anisotropic scattering, beyond spin accumulation and giant magnetoresistance (GMR). The corresponding expr…
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Spin injection in metallic normal/ferromagnetic junctions is investigated taking into account the anisotropic magnetoresistance (AMR) occurring in the ferromagnetic layer. It is shown, on the basis of a generalized two channel model, that there is an interface resistance contribution due to anisotropic scattering, beyond spin accumulation and giant magnetoresistance (GMR). The corresponding expression of the thermopower is derived and compared with the expression for the thermopower produced by the GMR. First measurements of anisotropic magnetothermopower are presented in electrodeposited Ni nanowires contacted with Ni, Au and Cu. The results of this study show that while the giant magnetoresistance and corresponding thermopower demonstrates the role of spin-flip scattering, the observed anisotropic magnetothermopower indicates interband s-d relaxation mechanisms.
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Submitted 26 October, 2005; v1 submitted 8 August, 2005;
originally announced August 2005.
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Conductance in multiwall carbon nanotubes and semiconductor nanowires : evidence of a universal tunneling barrier
Authors:
J. -F. Dayen,
X. Hoffer,
T. L. Wade,
M. Konczykowski,
J. -E. Wegrowe
Abstract:
Electronic transport in multiwall carbon nanotubes and semiconductor nanowires was compared. In both cases, the non ohmic behavior of the conductance, the so-called zero bias anomaly, shows a temperature dependence that scales with the voltage dependence. This robust scaling law describes the conductance $G(V,T)$ by a single coefficient $α$. A universal behavior as a function of $α$ is found for…
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Electronic transport in multiwall carbon nanotubes and semiconductor nanowires was compared. In both cases, the non ohmic behavior of the conductance, the so-called zero bias anomaly, shows a temperature dependence that scales with the voltage dependence. This robust scaling law describes the conductance $G(V,T)$ by a single coefficient $α$. A universal behavior as a function of $α$ is found for all samples. Magnetoconductance measurements furthermore show that the conduction regime is weak localization. The observed behavior can be understood in terms of the coulomb blockade theory, providing that a unique tunnel resistance on the order of 2000 $Ω$ and a Thouless energy of about 40 meV exists for all samples.
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Submitted 13 December, 2004;
originally announced December 2004.
