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Electron transport in dual-gated three-layer MoS$_2$
Authors:
M. Masseroni,
T. Davatz,
R. Pisoni,
F. K. de Vries,
P. Rickhaus,
T. Taniguchi,
K. Watanabe,
V. Fal'ko,
T. Ihn,
K. Ensslin
Abstract:
The low-energy band structure of few-layer MoS$_2$ is relevant for a large variety of experiments ranging from optics to electronic transport. Its characterization remains challenging due to complex multi band behavior. We investigate the conduction band of dual-gated three-layer MoS$_2$ by means of magnetotransport experiments. The total carrier density is tuned by voltages applied between MoS…
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The low-energy band structure of few-layer MoS$_2$ is relevant for a large variety of experiments ranging from optics to electronic transport. Its characterization remains challenging due to complex multi band behavior. We investigate the conduction band of dual-gated three-layer MoS$_2$ by means of magnetotransport experiments. The total carrier density is tuned by voltages applied between MoS$_2$ and both top and bottom gate electrodes. For asymmetrically biased top and bottom gates, electrons accumulate in the layer closest to the positively biased electrode. In this way, the three-layer MoS$_2$ can be tuned to behave electronically like a monolayer. In contrast, applying a positive voltage on both gates leads to the occupation of all three layers. Our analysis of the Shubnikov--de Haas oscillations originating from different bands lets us attribute the corresponding carrier densities in the top and bottom layers. We find a twofold Landau level degeneracy for each band, suggesting that the minima of the conduction band lie at the $\pm K$ points of the first Brillouin zone. This is in contrast to band structure calculations for zero layer asymmetry, which report minima at the $Q$ points. Even though the interlayer tunnel coupling seems to leave the low-energy conduction band unaffected, we observe scattering of electrons between the outermost layers for zero layer asymmetry. The middle layer remains decoupled due to the spin-valley symmetry, which is inverted for neighboring layers. When the bands of the outermost layers are energetically in resonance, interlayer scattering takes place, leading to an enhanced resistance and to magneto-interband oscillations.
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Submitted 29 April, 2021; v1 submitted 18 April, 2021;
originally announced April 2021.
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Fully automated identification of 2D material samples
Authors:
Eliska Greplova,
Carolin Gold,
Benedikt Kratochwil,
Tim Davatz,
Riccardo Pisoni,
Annika Kurzmann,
Peter Rickhaus,
Mark H. Fischer,
Thomas Ihn,
Sebastian Huber
Abstract:
Thin nanomaterials are key constituents of modern quantum technologies and materials research. Identifying specimens of these materials with properties required for the development of state of the art quantum devices is usually a complex and lengthy human task. In this work we provide a neural-network driven solution that allows for accurate and efficient scanning, data-processing and sample ident…
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Thin nanomaterials are key constituents of modern quantum technologies and materials research. Identifying specimens of these materials with properties required for the development of state of the art quantum devices is usually a complex and lengthy human task. In this work we provide a neural-network driven solution that allows for accurate and efficient scanning, data-processing and sample identification of experimentally relevant two-dimensional materials. We show how to approach classification of imperfect imbalanced data sets using an iterative application of multiple noisy neural networks. We embed the trained classifier into a comprehensive solution for end-to-end automatized data processing and sample identification.
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Submitted 31 October, 2019;
originally announced November 2019.
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Absence of inter-layer tunnel coupling of $K$-valley electrons in bilayer MoS$_{2}$
Authors:
Riccardo Pisoni,
Tim Davatz,
Kenji Watanabe,
Takashi Taniguchi,
Thomas Ihn,
Klaus Ensslin
Abstract:
In Bernal stacked bilayer graphene interlayer coupling significantly affects the electronic bandstructure compared to monolayer graphene. Here we present magnetotransport experiments on high-quality $n$-doped bilayer MoS$_{2}$. By measuring the evolution of the Landau levels as a function of electron density and applied magnetic field we are able to investigate the occupation of conduction band st…
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In Bernal stacked bilayer graphene interlayer coupling significantly affects the electronic bandstructure compared to monolayer graphene. Here we present magnetotransport experiments on high-quality $n$-doped bilayer MoS$_{2}$. By measuring the evolution of the Landau levels as a function of electron density and applied magnetic field we are able to investigate the occupation of conduction band states, the interlayer coupling in pristine bilayer MoS$_{2}$, and how these effects are governed by electron-electron interactions. We find that the two layers of the bilayer MoS$_{2}$ behave as two independent electronic systems where a two-fold Landau level's degeneracy is observed for each MoS$_{2}$ layer. At the onset of the population of the bottom MoS$_{2}$ layer we observe a large negative compressibility caused by the exchange interaction. These observations, enabled by the high electronic quality of our samples, demonstrate weak interlayer tunnel coupling but strong interlayer electrostatic coupling in pristine bilayer MoS$_{2}$. The conclusions from the experiments may be relevant also to other transition metal dichalcogenide materials.
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Submitted 19 April, 2019;
originally announced April 2019.
