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Synthesis of epitaxial monolayer Janus SPtSe
Authors:
R. Sant,
M. Gay,
A. Marty,
S. Lisi,
R. Harrabi,
C. Vergnaud,
M. T. Dau,
X. Weng,
J. Coraux,
N. Gauthier,
O. Renault,
G. Renaud,
M. Jamet
Abstract:
Janus single-layer transition metal dichalcogenides, in which the two chalcogen layers have a different chemical nature, push chemical composition control beyond what is usually achievable with van der Waals heterostructures. Here we report such a novel Janus compound, SPtSe, which is predicted to exhibit strong Rashba spin-orbit coupling. We synthetized it by conversion of a single-layer of PtSe…
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Janus single-layer transition metal dichalcogenides, in which the two chalcogen layers have a different chemical nature, push chemical composition control beyond what is usually achievable with van der Waals heterostructures. Here we report such a novel Janus compound, SPtSe, which is predicted to exhibit strong Rashba spin-orbit coupling. We synthetized it by conversion of a single-layer of PtSe$_2$ on Pt(111) via sulphurization under H$_2$S atmosphere. Our in situ and operando structural analysis with grazing incidence synchrotron X-ray diffraction reveals the process by which the Janus alloy forms. The crystalline long-range order of the as-grown PtSe$_2$ monolayer is first lost due to thermal annealing. A subsequent recrystallization in presence of a source of sulphur yields a highly ordered SPtSe alloy, which is iso-structural to the pristine PtSe$_2$. The chemical composition is resolved, layer-by-layer, using angle-resolved X-ray photoelectron spectroscopy, demonstrating that Se-by-S substitution occurs selectively in the topmost chalcogen layer.
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Submitted 18 September, 2020;
originally announced September 2020.
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New approach for the molecular beam epitaxy growth of scalable single-crystalline WSe$_2$ monolayers
Authors:
Céline Vergnaud,
Minh-Tuan Dau,
Benjamin Grévin,
Christophe Licitra,
Alain Marty,
Hanako Okuno,
Matthieu Jamet
Abstract:
The search for high-quality transition metal dichalcogenides mono- and multi-layers grown on large areas is still a very active field of investigation nowadays. Here, we use molecular beam epitaxy to grow 15$\times$15 mm large WSe$_2$ on mica in the van der Waals regime. By screening one-step growth conditions, we find that very high temperature ($>$900$^{\circ}$C) and very low deposition rate (…
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The search for high-quality transition metal dichalcogenides mono- and multi-layers grown on large areas is still a very active field of investigation nowadays. Here, we use molecular beam epitaxy to grow 15$\times$15 mm large WSe$_2$ on mica in the van der Waals regime. By screening one-step growth conditions, we find that very high temperature ($>$900$^{\circ}$C) and very low deposition rate ($<$0.015 nm/min) are necessary to obtain high quality WSe$_2$ films. The domain size can be larger than 1 $μ$m and the in-plane rotational misorientation less than $\pm$0.5$^{\circ}$. The WSe$_2$ monolayer is also robust against air exposure, can be easily transferred over 1 cm$^2$ on SiN/SiO$_2$ and exhibits strong photoluminescence signal. Moreover, by combining grazing incidence x-ray diffraction and transmission electron microscopy, we could detect the presence of few misoriented grains. A two-dimensional model based on atomic coincidences between the WSe$_2$ and mica crystals allows us to explain the formation of these misoriented grains and gives suggestion to remove them and further improve the crystalline quality of WSe$_2$.
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Submitted 17 October, 2019;
originally announced October 2019.
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The valley Nernst effect in WSe$_2$
Authors:
Minh-Tuan Dau,
Céline Vergnaud,
Alain Marty,
Cyrille Beigné,
Serge Gambarelli,
Vincent Maurel,
Timothée Journot,
Bérangère Hyot,
Thomas Guillet,
Benjamin Grévin,
Hanako Okuno,
Matthieu Jamet
Abstract:
The Hall effect can be extended by inducing a temperature gradient in lieu of electric field that is known as the Nernst (-Ettingshausen) effect. The recently discovered spin Nernst effect in heavy metals continues to enrich the picture of Nernst effect-related phenomena. However, the collection would not be complete without mentioning the valley degree of freedom benchmarked by the observation of…
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The Hall effect can be extended by inducing a temperature gradient in lieu of electric field that is known as the Nernst (-Ettingshausen) effect. The recently discovered spin Nernst effect in heavy metals continues to enrich the picture of Nernst effect-related phenomena. However, the collection would not be complete without mentioning the valley degree of freedom benchmarked by the observation of the valley Hall effect. Here we show the experimental evidence of its missing counterpart, the valley Nernst effect. Using millimeter-sized WSe$_{2}$ mono-multi-layers and the ferromagnetic resonance-spin pum** technique, we are able to apply a temperature gradient by off-centering the sample in the radio frequency cavity and address a single valley through spin-valley coupling. The combination of a temperature gradient and the valley polarization leads to the valley Nernst effect in WSe$_{2}$ that we detect electrically at room temperature. The valley Nernst coefficient is in very good agreement with the predicted value.
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Submitted 17 October, 2019;
originally announced October 2019.
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Structural properties of Co$_{2}$TiSi films on GaAs(001)
Authors:
B Jenichen,
J Herfort,
M Hanke,
U Jahn,
X Kong,
M T Dau,
A Trampert,
H Kirmse,
S C Erwin
Abstract:
Co$_{2}$TiSi films were grown by molecular beam epitaxy on GaAs(001) and analyzed using reflection high-energy electron diffraction, and electron microscopy. In addition, X-ray diffraction was combined with lattice parameter calculations by density functional theory comparing the \textit{L$2_1$} and \textit{B}2 structures and considering the influence of non--stoichiometry. Columnar growth is foun…
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Co$_{2}$TiSi films were grown by molecular beam epitaxy on GaAs(001) and analyzed using reflection high-energy electron diffraction, and electron microscopy. In addition, X-ray diffraction was combined with lattice parameter calculations by density functional theory comparing the \textit{L$2_1$} and \textit{B}2 structures and considering the influence of non--stoichiometry. Columnar growth is found and attributed to inhomogeneous epitaxial strain from non-random alloying. In films with thicknesses up to 13~nm these columns may be the origin of perpendicular magnetization with the easy axis perpendicular to the sample surface. We found \textit{L$2_1$} and \textit{B}2 ordered regions, however the [Co]/[Ti]--ratio is changing in dependence of the position in the film. The resulting columnar structure is leading to anisotropic \textit{B}2--ordering with the best order parallel to the axes of the columns.
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Submitted 11 July, 2019;
originally announced July 2019.
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Van der Waals epitaxy of Mn-doped MoSe$_2$ on mica
Authors:
M. T. Dau,
C. Vergnaud,
M. Gay,
C. J. Alvarez,
A. Marty,
C. Beigné,
D. Jalabert,
J. -F. Jacquot,
O. Renault,
H. Okuno,
M. Jamet
Abstract:
The magnetic order associated with the degree of freedom of spin in two-dimensional (2D) materials is subjected to intense investigation because of its potential application in 2D spintronics and valley-related magnetic phenomena. We report here a bottom-up strategy using molecular beam epitaxy to grow and dope large-area (cm$^2$) few-layer MoSe$_2$ with Mn as a magnetic dopant. High-quality Mn-do…
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The magnetic order associated with the degree of freedom of spin in two-dimensional (2D) materials is subjected to intense investigation because of its potential application in 2D spintronics and valley-related magnetic phenomena. We report here a bottom-up strategy using molecular beam epitaxy to grow and dope large-area (cm$^2$) few-layer MoSe$_2$ with Mn as a magnetic dopant. High-quality Mn-doped MoSe$_2$ layers are obtained for Mn content of less than 5 % (atomic). When increasing the Mn content above 5 % we observe a clear transition from layer-by-layer to cluster growth. Magnetic measurements involving a transfer process of the cm$^2$-large doped layers on 100-micron-thick silicon substrate, show plausible proof of high-temperature ferromagnetism of 1 % and 10 % Mn-doped MoSe$_2$. Although we could not point to a correlation between magnetic and electrical properties, we demonstrate that the transfer process described in this report permits to achieve conventional electrical and magnetic measurements on the doped layers transferred on any substrate. Therefore, this study provides a promising route to characterize stable ferromagnetic 2D layers, which is broadening the current start-of-the-art of 2D materials-based applications.
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Submitted 11 June, 2019;
originally announced June 2019.
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Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe$_2$ few-layers on SiO$_2$/Si
Authors:
C. Vergnaud,
M. Gay,
C. Alvarez,
M. -T. Dau,
F. Pierre,
D. Jalabert,
C. Licitra,
A. Marty,
C. Beigné,
B. Grévin,
O. Renault,
H. Okuno,
M. Jamet
Abstract:
Large-area growth of continuous transition metal dichalcogenides (TMDCs) layers is a prerequisite to transfer their exceptional electronic and optical properties into practical devices. It still represents an open issue nowadays. Electric and magnetic do** of TMDC layers to develop basic devices such as p-n junctions or diluted magnetic semiconductors for spintronic applications are also an impo…
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Large-area growth of continuous transition metal dichalcogenides (TMDCs) layers is a prerequisite to transfer their exceptional electronic and optical properties into practical devices. It still represents an open issue nowadays. Electric and magnetic do** of TMDC layers to develop basic devices such as p-n junctions or diluted magnetic semiconductors for spintronic applications are also an important field of investigation. Here, we have developed two different techniques to grow MoSe$_2$ mono- and multi-layers on SiO$_2$/Si substrates over large areas. First, we co-deposited Mo and Se atoms on SiO$_2$/Si by molecular beam epitaxy in the van der Waals regime to obtain continuous MoSe$_2$ monolayers over 1 cm$^2$. To grow MoSe$_2$ multilayers, we then used the van der Waals solid phase epitaxy which consists in depositing an amorphous Se/Mo bilayer on top of a co-deposited MoSe$_2$ monolayer which serves as a van der Waals growth template. By annealing, we obtained continuous MoSe$_2$ multilayers over 1 cm$^2$. Moreover, by inserting a thin layer of Mn in the stack, we could demonstrate the incorporation of up to 10 \% of Mn in MoSe$_2$ bilayers.
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Submitted 7 June, 2019;
originally announced June 2019.
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Magnetotransport in Bi$_2$Se$_3$ thin films epitaxially grown on Ge(111)
Authors:
T. Guillet,
A. Marty,
C. Beigné,
C. Vergnaud,
M. -T. Dau,
P. Noël,
J. Frigerio,
G. Isella,
M. Jamet
Abstract:
Topological insulators (TIs) like Bi$_2$Se$_3$ are a class of material with topologically protected surface states in which spin-momentum locking may enable spin-polarized and defect-tolerant transport. In this work, we achieved the epitaxial growth of Bi$_2$Se$_3$ thin films on germanium, which is a key material for microelectronics. Germanium also exhibits interesting properties with respect to…
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Topological insulators (TIs) like Bi$_2$Se$_3$ are a class of material with topologically protected surface states in which spin-momentum locking may enable spin-polarized and defect-tolerant transport. In this work, we achieved the epitaxial growth of Bi$_2$Se$_3$ thin films on germanium, which is a key material for microelectronics. Germanium also exhibits interesting properties with respect to the electron spin such as a spin diffusion length of several micrometers at room temperature. By growing Bi$_2$Se$_3$ on germanium, we aim at combining the long spin diffusion length of Ge with the spin-momentum locking at the surface of Bi$_2$Se$_3$. We first performed a thorough structural analysis of Bi$_2$Se$_3$ films using electron and x-ray diffraction as well as atomic force microscopy. Then, magnetotransport measurements at low temperature showed the signature of weak antilocalization as a result of two-dimensional transport in the topologically protected surface states of Bi$_2$Se$_3$. Interestingly, the magnetotransport measurements also point out that the conduction channel can be tuned between the Bi$_2$Se$_3$ film and the Ge layer underneath by means of the bias voltage or the applied magnetic field. This result suggests that the Bi$_2$Se$_3$/Ge junction is a promising candidate for tuning spin-related phenomena at interfaces between TIs and semiconductors.
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Submitted 2 August, 2018;
originally announced August 2018.
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Tuning spin-charge interconversion with quantum confinement in ultrathin Bi/Ge(111) films
Authors:
C. Zucchetti,
M. -T Dau,
F. Bottegoni,
C. Vergnaud,
T. Guillet,
A. Marty,
C. Beigné,
S. Gambarelli,
A. Picone,
A. Calloni,
G. Bussetti,
A. Brambilla,
L. Duò,
F. Ciccacci,
P. K. Das,
J. Fujii,
I. Vobornik,
M. Finazzi,
M. Jamet
Abstract:
Spin-charge interconversion (SCI) phenomena have attracted a growing interest in the field of spintronics as means to detect spin currents or manipulate the magnetization of ferromagnets. The key ingredients to exploit these assets are a large conversion efficiency, the scalability down to the nanometer scale and the integrability with opto-electronic and spintronic devices. Here we show that, whe…
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Spin-charge interconversion (SCI) phenomena have attracted a growing interest in the field of spintronics as means to detect spin currents or manipulate the magnetization of ferromagnets. The key ingredients to exploit these assets are a large conversion efficiency, the scalability down to the nanometer scale and the integrability with opto-electronic and spintronic devices. Here we show that, when an ultrathin Bi film is epitaxially grown on top of a Ge(111) substrate, quantum size effects arising in nanometric Bi islands drastically boost the SCI efficiency, even at room temperature. Using x-ray diffraction (XRD), scanning tunneling microscopy (STM) and spin- and angle-resolved photoemission (S-ARPES) we obtain a clear picture of the film morphology, crystallography and electronic structure. We then exploit the Rashba-Edelstein effect (REE) and inverse Rashba-Edelstein effect (IREE) to directly quantify the SCI efficiency using optical and electrical spin injection.
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Submitted 4 May, 2018;
originally announced May 2018.
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In-Datacenter Performance Analysis of a Tensor Processing Unit
Authors:
Norman P. Jouppi,
Cliff Young,
Nishant Patil,
David Patterson,
Gaurav Agrawal,
Raminder Bajwa,
Sarah Bates,
Suresh Bhatia,
Nan Boden,
Al Borchers,
Rick Boyle,
Pierre-luc Cantin,
Clifford Chao,
Chris Clark,
Jeremy Coriell,
Mike Daley,
Matt Dau,
Jeffrey Dean,
Ben Gelb,
Tara Vazir Ghaemmaghami,
Rajendra Gottipati,
William Gulland,
Robert Hagmann,
C. Richard Ho,
Doug Hogberg
, et al. (50 additional authors not shown)
Abstract:
Many architects believe that major improvements in cost-energy-performance must now come from domain-specific hardware. This paper evaluates a custom ASIC---called a Tensor Processing Unit (TPU)---deployed in datacenters since 2015 that accelerates the inference phase of neural networks (NN). The heart of the TPU is a 65,536 8-bit MAC matrix multiply unit that offers a peak throughput of 92 TeraOp…
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Many architects believe that major improvements in cost-energy-performance must now come from domain-specific hardware. This paper evaluates a custom ASIC---called a Tensor Processing Unit (TPU)---deployed in datacenters since 2015 that accelerates the inference phase of neural networks (NN). The heart of the TPU is a 65,536 8-bit MAC matrix multiply unit that offers a peak throughput of 92 TeraOps/second (TOPS) and a large (28 MiB) software-managed on-chip memory. The TPU's deterministic execution model is a better match to the 99th-percentile response-time requirement of our NN applications than are the time-varying optimizations of CPUs and GPUs (caches, out-of-order execution, multithreading, multiprocessing, prefetching, ...) that help average throughput more than guaranteed latency. The lack of such features helps explain why, despite having myriad MACs and a big memory, the TPU is relatively small and low power. We compare the TPU to a server-class Intel Haswell CPU and an Nvidia K80 GPU, which are contemporaries deployed in the same datacenters. Our workload, written in the high-level TensorFlow framework, uses production NN applications (MLPs, CNNs, and LSTMs) that represent 95% of our datacenters' NN inference demand. Despite low utilization for some applications, the TPU is on average about 15X - 30X faster than its contemporary GPU or CPU, with TOPS/Watt about 30X - 80X higher. Moreover, using the GPU's GDDR5 memory in the TPU would triple achieved TOPS and raise TOPS/Watt to nearly 70X the GPU and 200X the CPU.
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Submitted 16 April, 2017;
originally announced April 2017.
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Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance
Authors:
M. T. Dau,
C. Vergnaud,
A. Marty,
F. Rortais,
C. Beigné,
H. Boukari,
E. Bellet-Amalric,
V. Guigoz,
O. Renault,
C. Alvarez,
H. Okuno,
P. Pochet,
M. Jamet
Abstract:
Molecular beam epitaxy technique has been used to deposit a single layer and a bilayer of MoSe 2 on sapphire. Extensive characterizations including in-situ and ex-situ measurements show that the layered MoSe 2 grows in a scalable manner on the substrate and reveals characteristics of a stoichiometric 2H-phase. The layered MoSe 2 exhibits polycrystalline features with domains separated by defects a…
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Molecular beam epitaxy technique has been used to deposit a single layer and a bilayer of MoSe 2 on sapphire. Extensive characterizations including in-situ and ex-situ measurements show that the layered MoSe 2 grows in a scalable manner on the substrate and reveals characteristics of a stoichiometric 2H-phase. The layered MoSe 2 exhibits polycrystalline features with domains separated by defects and boundaries. Temperature and magnetic field dependent resistivity measurements unveil a carrier hop** character described within two-dimensional variable range hop** mechanism. Moreover, a negative magnetoresistance was observed, stressing a fascinating feature of the charge transport under the application of a magnetic field in the layered MoSe 2 system. This negative magnetoresistance observed at millimeter-scale is similar to that observed recently at room temperature inWS2 flakes at a micrometer scale [Zhang et al., Appl. Phys. Lett. 108, 153114 (2016)]. This scalability highlights the fact that the underlying physical mechanism is intrinsic to these two-dimensional materials and occurs at very short scale.
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Submitted 16 February, 2017;
originally announced February 2017.
