Showing 1–9 of 9 results for author: Dash, G

System-level Impact of Non-Ideal Program-Time of Charge Trap Flash (CTF) on Deep Neural Network

Authors: S. Shrivastava, A. Biswas, S. Chakrabarty, G. Dash, V. Saraswat, U. Ganguly

Abstract: Learning of deep neural networks (DNN) using Resistive Processing Unit (RPU) architecture is energy-efficient as it utilizes dedicated neuromorphic hardware and stochastic computation of weight updates for in-memory computing. Charge Trap Flash (CTF) devices can implement RPU-based weight updates in DNNs. However, prior work has shown that the weight updates (V_T) in CTF-based RPU are impacted by… ▽ More Learning of deep neural networks (DNN) using Resistive Processing Unit (RPU) architecture is energy-efficient as it utilizes dedicated neuromorphic hardware and stochastic computation of weight updates for in-memory computing. Charge Trap Flash (CTF) devices can implement RPU-based weight updates in DNNs. However, prior work has shown that the weight updates (V_T) in CTF-based RPU are impacted by the non-ideal program time of CTF. The non-ideal program time is affected by two factors of CTF. Firstly, the effects of the number of input pulses (N) or pulse width (pw), and secondly, the gap between successive update pulses (t_gap) used for the stochastic computation of weight updates. Therefore, the impact of this non-ideal program time must be studied for neural network training simulations. In this study, Firstly, we propose a pulse-train design compensation technique to reduce the total error caused by non-ideal program time of CTF and stochastic variance of a network. Secondly, we simulate RPU-based DNN with non-ideal program time of CTF on MNIST and Fashion-MNIST datasets. We find that for larger N (~1000), learning performance approaches the ideal (software-level) training level and, therefore, is not much impacted by the choice of t_gap used to implement RPU-based weight updates. However, for lower N (<500), learning performance depends on T_gap of the pulses. Finally, we also performed an ablation study to isolate the causal factor of the improved learning performance. We conclude that the lower noise level in the weight updates is the most likely significant factor to improve the learning performance of DNN. Thus, our study attempts to compensate for the error caused by non-ideal program time and standardize the pulse length (N) and pulse gap (t_gap) specifications for CTF-based RPUs for accurate system-level on-chip training. △ Less

Submitted 15 February, 2024; originally announced February 2024.

Radiation Hardness of MALTA2 Monolithic CMOS Sensors on Czochralski Substrates

Authors: Milou van Rijnbach, Dumitru Vlad Berlea, Valerio Dao, Martin Gaži, Phil Allport, Ignacio Asensi Tortajada, Prafulla Behera, Daniela Bortoletto, Craig Buttar, Florian Dachs, Ganapati Dash, Dominik Dobrijević, Lucian Fasselt, Leyre Flores Sanz de Acedo, Andrea Gabrielli, Vicente González, Giuliano Gustavino, Pranati Jana, Heinz Pernegger, Petra Riedler, Heidi Sandaker, Carlos Solans Sánchez, Walter Snoeys, Tomislav Suligoj, Marcos Vázquez Núñez , et al. (4 additional authors not shown)

Abstract: MALTA2 is the latest full-scale prototype of the MALTA family of Depleted Monolithic Active Pixel Sensors (DMAPS) produced in Tower Semiconductor 180 nm CMOS technology. In order to comply with the requirements of High Energy Physics (HEP) experiments, various process modifications and front-end changes have been implemented to achieve low power consumption, reduce Random Telegraph Signal (RTS) no… ▽ More MALTA2 is the latest full-scale prototype of the MALTA family of Depleted Monolithic Active Pixel Sensors (DMAPS) produced in Tower Semiconductor 180 nm CMOS technology. In order to comply with the requirements of High Energy Physics (HEP) experiments, various process modifications and front-end changes have been implemented to achieve low power consumption, reduce Random Telegraph Signal (RTS) noise, and optimise the charge collection geometry. Compared to its predecessors, MALTA2 targets the use of a high-resistivity, thick Czochralski (Cz) substrates in order to demonstrate radiation hardness in terms of detection efficiency and timing resolution up to 3E15 1 MeV neq/cm2 with backside metallisation to achieve good propagation of the bias voltage. This manuscript shows the results that were obtained with non-irradiated and irradiated MALTA2 samples on Cz substrates from the CERN SPS test beam campaign from 2021-2023 using the MALTA telescope. △ Less

Submitted 25 August, 2023; originally announced August 2023.

Non-Ideal Program-Time Conservation in Charge Trap Flash for Deep Learning

Authors: Shalini Shrivastava, Vivek Saraswat, Gayatri Dash, Samyak Chakrabarty, Udayan Ganguly

Abstract: Training deep neural networks (DNNs) is computationally intensive but arrays of non-volatile memories like Charge Trap Flash (CTF) can accelerate DNN operations using in-memory computing. Specifically, the Resistive Processing Unit (RPU) architecture uses the voltage-threshold program by stochastic encoded pulse trains and analog memory features to accelerate vector-vector outer product and weight… ▽ More Training deep neural networks (DNNs) is computationally intensive but arrays of non-volatile memories like Charge Trap Flash (CTF) can accelerate DNN operations using in-memory computing. Specifically, the Resistive Processing Unit (RPU) architecture uses the voltage-threshold program by stochastic encoded pulse trains and analog memory features to accelerate vector-vector outer product and weight update for the gradient descent algorithms. Although CTF, offering high precision, has been regarded as an excellent choice for implementing RPU, the accumulation of charge due to the applied stochastic pulse trains is ultimately of critical significance in determining the final weight update. In this paper, we report the non-ideal program-time conservation in CTF through pulsing input measurements. We experimentally measure the effect of pulse width and pulse gap, kee** the total ON-time of the input pulse train constant, and report three non-idealities: (1) Cumulative V_T shift reduces when total ON-time is fragmented into a larger number of shorter pulses, (2) Cumulative V_T shift drops abruptly for pulse widths < 2 μs, (3) Cumulative V_T shift depends on the gap between consecutive pulses and the V_T shift reduction gets recovered for smaller gaps. We present an explanation based on a transient tunneling field enhancement due to blocking oxide trap-charge dynamics to explain these non-idealities. Identifying and modeling the responsible mechanisms and predicting their system-level effects during learning is critical. This non-ideal accumulation is expected to affect algorithms and architectures relying on devices for implementing mathematically equivalent functions for in-memory computing-based acceleration. △ Less

Submitted 12 July, 2023; originally announced July 2023.

Report number: Semiconductor Science Technology 38 105008

Journal ref: Published 6 September 2023 IOP Publishing Ltd

Floquet Exceptional Topological Insulator

Authors: Gaurab Kumar Dash, Subhajyoti Bid, Manisha Thakurathi

Abstract: We propose a novel way of modulating exceptional topology by implementing Floquet engineering in non-hermitian (NH) systems. We introduce Floquet exceptional topological insulator which results from shining light on a conventional three-dimensional NH topological insulator. Lightmatter interaction facilitates the quantum phases of matter to exhibit a novel phenomenon, where, the point gaps in the… ▽ More We propose a novel way of modulating exceptional topology by implementing Floquet engineering in non-hermitian (NH) systems. We introduce Floquet exceptional topological insulator which results from shining light on a conventional three-dimensional NH topological insulator. Lightmatter interaction facilitates the quantum phases of matter to exhibit a novel phenomenon, where, the point gaps in the bulk host surface states. These distinct surface states either fill the point gap in the complex eigenspectrum or exhibit exceptional points in the presence of a magnetic field. We also highlight the existence of a quantum anomaly generated by photo-induced modulation. The existence of the Floquet biorthogonal Chern number and spectral winding number show that the momentum slices exhibit NH skin effect, even though the system as a whole does not. We also employ wave-dynamics evolution to illustrate the NH surface skin effect. △ Less

Submitted 30 January, 2023; originally announced January 2023.

Comments: 18 pages, 12 figures

Journal ref: Phys. Rev. B 109, 035418 (2024)

Non-Hermitian higher-Order Weyl semimetal with surface diabolic points

Authors: Subhajyoti Bid, Gaurab Kumar Dash, Manisha Thakurathi

Abstract: Higher-order topology in non-Hermitian (NH) systems has recently become one of the most promising and rapidly develo** fields in condensed matter physics. Many distinct phases that were not present in the Hermitian equivalents are shown in these systems. In this work, we examine how higher-order Weyl semimetals are impacted by NH perturbation. We identify a new type of topological semimetal, i.e… ▽ More Higher-order topology in non-Hermitian (NH) systems has recently become one of the most promising and rapidly develo** fields in condensed matter physics. Many distinct phases that were not present in the Hermitian equivalents are shown in these systems. In this work, we examine how higher-order Weyl semimetals are impacted by NH perturbation. We identify a new type of topological semimetal, i.e., non-Hermitian higher-order Weyl semimetal (NHHOWS) with surface diabolic points. We demonstrate that in such an NHHOWS, new exceptional points inside the bulk can be created and annihilated, therefore allowing us to manipulate their number. At the boundary, these exceptional points are connected through unique surface states with diabolic points and hinge states. For specific system parameters, the surface of NHHOWS behaves as a Dirac phase with linear dispersion or a Luttinger phase with a quadratic dispersion, thus paving a way for Dirac-Luttinger switching. Finally, we employ the biorthogonal technique to reinstate the standard bulk boundary correspondence for NH systems and compute the topological invariants. The obtained quantized biorthogonal Chern number and quadruple moment topologically protect the unique surface and hinge states, respectively. △ Less

Submitted 14 December, 2022; originally announced December 2022.

Comments: 16 pages, 11 figures

Journal ref: Phys. Rev. B 107, 165120 (2023)

Visible-blind ZnMgO Colloidal Quantum Dot Downconverters expand Silicon CMOS Sensors Spectral Coverage into Ultraviolet and enable UV Band Discrimination

Authors: Avijit Saha, a Gaurav Kumar, a Santanu Pradhan, a Gauttam Dash, b Ranjani Viswanathab, Gerasimos Konstantatos

Abstract: Selective spectral detection of ultraviolet (UV) radiation is highly important across numerous fields from health and safety to industrial and environmental monitoring applications. Herein, we report a non-toxic, visible-blind, inorganic quantum dot (QD)-based sensing scheme that expands the spectral coverage of Silicon CMOS sensors into the UV, enabling efficient UV detection without affecting th… ▽ More Selective spectral detection of ultraviolet (UV) radiation is highly important across numerous fields from health and safety to industrial and environmental monitoring applications. Herein, we report a non-toxic, visible-blind, inorganic quantum dot (QD)-based sensing scheme that expands the spectral coverage of Silicon CMOS sensors into the UV, enabling efficient UV detection without affecting the sensor performance in the visible and UV-band discrimination. The reported scheme employs zinc magnesium oxide (ZnMgO) QDs with compositionally tunable absorption across UV and high photoluminescence quantum yield (PLQY) in the visible. The efficient luminescence and large stokes shift of these QDs have been exploited herein to act as an efficient downconverting material that enhances the UV sensitivity of Si-photodetector (Si-PD). A Si-PD integrated with the QDs results in a nine-fold improvement in photoresponsivity from 0.83 mA/W to 7.5 mA/W at 260 nm. Leveraging the tunability of these QDs we further report on a simple UV band identification scheme, using two distinct band gap ZnMgO QDs stacked in a tandem architecture whose spectral emission color depends on the UV-band excitation light. The downconverting stack enables facile discrimination of UV light using a standard CMOS image sensor (camera) or by the naked eye and avoids the use of complex optics. △ Less

Submitted 25 March, 2022; originally announced March 2022.

Electrical Parameters for Planar Transport in Graphene and 2-D Materials

Authors: Gananath Dash

Abstract: Classical electrodynamics has been revisited with a view to recast the electrical parameters for planar transport in 2-dimensional (2-D) materials like graphene. In this attempt a new line integral, named transverse line integral, with extensive applications in 2-D, is defined. Since the existing divergence theorem in not applicable in 2-D, we introduced a new divergence theorem. A new definition… ▽ More Classical electrodynamics has been revisited with a view to recast the electrical parameters for planar transport in 2-dimensional (2-D) materials like graphene. In this attempt a new line integral, named transverse line integral, with extensive applications in 2-D, is defined. Since the existing divergence theorem in not applicable in 2-D, we introduced a new divergence theorem. A new definition for the in-plane flux of any 2-D vector is introduced. A new vector named electric vector potential is defined and Gauss law is modified in terms of the 2-D flux of the new vector. The new Gauss law in presence of dielectric is obtained and a new electric displacement vector is defined for the 2-D materials. The conduction and displacement current densities in 2-D are defined. Resistance and resistivity in 2-D materials are discussed. The continuity equation for planar transport is derived. △ Less

Submitted 19 September, 2018; originally announced September 2018.

Comments: 27 pages, 7 Figures, 1 Appendix, 1 Table, 9 references

Phase transitions on the surface of a carbon nanotube

Authors: Zenghui Wang, Jiang Wei, Peter Morse, J. Gregory Dash, Oscar E. Vilches, David H. Cobden

Abstract: A suspended carbon nanotube can act as a nanoscale resonator with remarkable electromechanical properties and the ability to detect adsorption on its surface at the level of single atoms. Understanding adsorption on nanotubes and other graphitic materials is key to many sensing and storage applications. Here we show that nanotube resonators offer a powerful new means of investigating fundamental… ▽ More A suspended carbon nanotube can act as a nanoscale resonator with remarkable electromechanical properties and the ability to detect adsorption on its surface at the level of single atoms. Understanding adsorption on nanotubes and other graphitic materials is key to many sensing and storage applications. Here we show that nanotube resonators offer a powerful new means of investigating fundamental aspects of adsorption on carbon, including the collective behaviour of adsorbed matter and its coupling to the substrate electrons. By monitoring the vibrational resonance frequency in the presence of noble gases, we observe the formation of monolayers on the cylindrical surface and phase transitions within these monolayers, and simultaneous modification of the electrical conductance. The monolayer observations also demonstrate the possibility of studying the fundamental behaviour of matter in cylindrical geometry. △ Less

Submitted 3 September, 2009; originally announced September 2009.

Comments: Unpublished; 7 pages with 4 figures plus 3 pages of supplementary material

Journal ref: Science 372 552 (2010)

Classical rotational inertia of solid helium 4

Authors: J. G. Dash, J. S. Wettlaufer

Abstract: The observation of reduced rotational inertia in a cell containing solid helium 4 has been interpreted as evidence for superfluidity of the solid. An alternative explanation is slippage of the solid at the container wall due to grain boundary premelting between the solid and dense adsorbed layers at the container wall. We calculate the range of film thickness and the viscous drag, and find that… ▽ More The observation of reduced rotational inertia in a cell containing solid helium 4 has been interpreted as evidence for superfluidity of the solid. An alternative explanation is slippage of the solid at the container wall due to grain boundary premelting between the solid and dense adsorbed layers at the container wall. We calculate the range of film thickness and the viscous drag, and find that the slippage can account for the observations. △ Less

Submitted 30 December, 2004; originally announced December 2004.

Comments: 4 pages, 1 figure