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Infrared Nanoimaging of Hydrogenated Perovskite Nickelate Synaptic Devices
Authors:
Sampath Gamage,
Sukriti Manna,
Marc Zajac,
Steven Hancock,
Qi Wang,
Sarabpreet Singh,
Mahdi Ghafariasl,
Kun Yao,
Tom Tiwald,
Tae Joon Park,
David P. Landau,
Haidan Wen,
Subramanian Sankaranarayanan,
Pierre Darancet,
Shriram Ramanathan,
Yohannes Abate
Abstract:
Solid-state devices made from correlated oxides such as perovskite nickelates are promising for neuromorphic computing by mimicking biological synaptic function. However, comprehending dopant action at the nanoscale poses a formidable challenge to understanding the elementary mechanisms involved. Here, we perform operando infrared nanoimaging of hydrogen-doped correlated perovskite, neodymium nick…
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Solid-state devices made from correlated oxides such as perovskite nickelates are promising for neuromorphic computing by mimicking biological synaptic function. However, comprehending dopant action at the nanoscale poses a formidable challenge to understanding the elementary mechanisms involved. Here, we perform operando infrared nanoimaging of hydrogen-doped correlated perovskite, neodymium nickel oxide (H-NdNiO3) devices and reveal how an applied field perturbs dopant distribution at the nanoscale. This perturbation leads to stripe phases of varying conductivity perpendicular to the applied field, which define the macroscale electrical characteristics of the devices. Hyperspectral nano-FTIR imaging in conjunction with density functional theory calculations unveil a real-space map of multiple vibrational states of H-NNO associated with OH stretching modes and their dependence on the dopant concentration. Moreover, the localization of excess charges induces an out-of-plane lattice expansion in NNO which was confirmed by in-situ - x-ray diffraction and creates a strain that acts as a barrier against further diffusion. Our results and the techniques presented here hold great potential to the rapidly growing field of memristors and neuromorphic devices wherein nanoscale ion motion is fundamentally responsible for function.
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Submitted 29 August, 2023;
originally announced September 2023.
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Excitation protocols for non-linear phononics in bismuth and antimony
Authors:
Anubhab Haldar,
Zhengjie Huang,
Xuedan Ma,
Pierre Darancet,
Sahar Sharifzadeh
Abstract:
We study the optical generation and control of coherent phonons in elemental bismuth (Bi) and antimony (Sb) using a classical equation of motion informed by first-principles calculations of the potential energy surface and the frequency-dependent macroscopic dielectric function along the zone-centered optical phonons coordinates. Using this approach, we demonstrate that phonons with the largest op…
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We study the optical generation and control of coherent phonons in elemental bismuth (Bi) and antimony (Sb) using a classical equation of motion informed by first-principles calculations of the potential energy surface and the frequency-dependent macroscopic dielectric function along the zone-centered optical phonons coordinates. Using this approach, we demonstrate that phonons with the largest optomechanical couplings, also have the strongest degree of anharmonicity among the zone-centered modes, a result of the broken symmetry structural ground state of Bi and Sb. We show how this anharmonicity, explaining the light-induced phonon softening observed in experiments, prevents the application of standard phonon-amplification and annihilation protocols. We introduce a simple linearization protocol that extends the use of such protocols to the case of anharmonic phonons in broken symmetry materials, and demonstrate its efficiency at high displacement amplitudes. Our formalism and results provide a path for improving optical control in non-linear phononics.
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Submitted 20 November, 2023; v1 submitted 21 July, 2023;
originally announced July 2023.
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A Continuous Action Space Tree search for INverse desiGn (CASTING) Framework for Materials Discovery
Authors:
Suvo Banik,
Troy Loefller,
Sukriti Manna,
Srilok Srinivasan,
Pierre Darancet,
Henry Chan,
Alexander Hexemer,
Subramanian KRS Sankaranarayanan
Abstract:
Fast and accurate prediction of optimal crystal structure, topology, and microstructures is important for accelerating the design and discovery of new materials. A challenge lies in the exorbitantly large structural and compositional space presented by the various elements and their combinations. Speed, accuracy, and scalability are three desirables for any inverse design tool to sample efficientl…
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Fast and accurate prediction of optimal crystal structure, topology, and microstructures is important for accelerating the design and discovery of new materials. A challenge lies in the exorbitantly large structural and compositional space presented by the various elements and their combinations. Speed, accuracy, and scalability are three desirables for any inverse design tool to sample efficiently across such a vast space. While traditional global optimization approaches (e.g., evolutionary algorithm, random sampling based) have demonstrated the ability to predict new crystal structures that can be used as super-hard materials, semiconductors, and photovoltaic materials to name a few, it is highly desirable to develop approaches that converge faster to the solution, have better solution quality, and are scalable to high dimensionality. Reinforcement learning (RL) approaches are emerging as powerful design tools capable of addressing these issues but primarily operate in discrete action space. In this work, we introduce CASTING, which is an RL-based scalable framework for crystal structure, topology, and potentially microstructure prediction. CASTING employs an RL-based continuous search space decision tree (MCTS -Monte Carlo Tree Search) algorithm with three important modifications (i) a modified rewards scheme for improved search space exploration (ii) a 'windowing' or 'funneling' scheme for improved exploitation and (iii) adaptive sampling during playouts for efficient and scalable search. Using a set of representative examples ranging from metals such as Ag to covalent systems such as C and multicomponent systems (graphane, boron nitride, and complex correlated oxides), we demonstrate the accuracy, the speed of convergence, and the scalability of CASTING to discover new metastable crystal structures and phases that meet the target objective.
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Submitted 22 December, 2022;
originally announced December 2022.
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Interplay of broken symmetry and delocalized excitations in the insulating state of 1$T$-TaS$_2$
Authors:
Xun Jia,
Anubhab Haldar,
Jungho Kim,
Yilin Wang,
Gilberto Fabbris,
Karl Ludwig,
Stefanos Kourtis,
Mary Upton,
Yu Liu,
Wenjian Lu,
Xuan Luo,
Yu-** Sun,
Diego Casa,
Sahar Sharifzadeh,
Pierre T. Darancet,
Yue Cao
Abstract:
Coexistence of localized and extended excitations is central to the macroscopic properties of correlated materials. For 5d transition metal compounds, electron correlations alone generally do not lead to a metal-insulator (Mott) transition, with insulating behavior usually resulting from their coupling with magnetic ordering and/or structural distortions. 1$T$-TaS$_2$ is a prototypical example of…
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Coexistence of localized and extended excitations is central to the macroscopic properties of correlated materials. For 5d transition metal compounds, electron correlations alone generally do not lead to a metal-insulator (Mott) transition, with insulating behavior usually resulting from their coupling with magnetic ordering and/or structural distortions. 1$T$-TaS$_2$ is a prototypical example of such correlated insulating behavior, with a high-symmetry metallic phase transforming into a distorted, charge density wave (CDW) insulating state at low temperatures. The relevance of the localized electron physics at play in 3d compounds to these 5d transition metal compounds remains an open question. We resolved this standing controversy in 1$T$-TaS$_2$ combining resonant inelastic X-ray spectroscopy and first-principles calculations. We observed five electronic excitations arising from the interband transitions of the Ta 5d orbitals and the S 3p ligand state, with none of the excitations on the order of the Mott gap. These excitations cannot be explained within the framework of standard multiplet calculations that assume a localized wavefunction, but instead, are captured by a band theory framework accounting for the low symmetry of the crystal field in the CDW state. Our findings suggest that the electronic property of 1$T$-TaS$_2$ is dominated by both plasmonic quasiparticles and inter-band transitions associated with a Drude-type response, with no resonance associated with a putative Mott transition. Our discovery provides new insights into the electron localization and the onset of insulating behavior in 5d transition metal materials.
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Submitted 12 October, 2022; v1 submitted 3 October, 2022;
originally announced October 2022.
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Analytical Theory of Near-Field Electrostatic Effects in Two-Dimensional Materials and van der Waals Heterojunctions
Authors:
Qunfei Zhou,
Michele Kotiuga,
Pierre Darancet
Abstract:
We derive and validate a quantitative analytical model of the near-field electrostatic effects in the vicinity (>=3Å) of two-dimensional (2D) materials. In solving the Poisson equation of a near-planar point charge ansatz for the electronic density of a 2D material, our formula quantitatively captures the out-of-plane decay and the in-plane modulation of density functional theory (DFT)-calculated…
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We derive and validate a quantitative analytical model of the near-field electrostatic effects in the vicinity (>=3Å) of two-dimensional (2D) materials. In solving the Poisson equation of a near-planar point charge ansatz for the electronic density of a 2D material, our formula quantitatively captures the out-of-plane decay and the in-plane modulation of density functional theory (DFT)-calculated potentials. We provide a method for quickly constructing the electronic density ansatz, and apply it to the case of hexagonal monolayers (BN, AlN, GaN) and monochalcogenides (GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbS, PbSe, PbTe) and their flexural and polar distortions. We demonstrate how our model can be straightforwardly applied to predict material-/angle-specific moiré potentials arising in twisted superlattices with periodicities beyond the reach of DFT calculations.
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Submitted 9 May, 2022;
originally announced May 2022.
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Engineering the Electronic Structure of Two-Dimensional Materials with Near-Field Electrostatic Effects of Self-Assembled Organic Layers
Authors:
Qunfei Zhou,
Bukuru Anaclet,
Trevor Steiner,
Michele Kotiuga,
Pierre Darancet
Abstract:
We compute the electronic structure of two-dimensional (2D) materials decorated with self-assembled organic monolayers using density functional theory. We find that 2D materials are strongly impacted by near-field electrostatic effects resulting from high multipoles of the organic layer electronic density. We show that this effect can lead to significant (~0.5V) modulation of the in-plane potentia…
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We compute the electronic structure of two-dimensional (2D) materials decorated with self-assembled organic monolayers using density functional theory. We find that 2D materials are strongly impacted by near-field electrostatic effects resulting from high multipoles of the organic layer electronic density. We show that this effect can lead to significant (~0.5V) modulation of the in-plane potential experienced by electrons in 2D materials within ~4Åfrom the molecular layer, with a transition between near- and far-field depending on the lateral extent of the molecules. We develop a theory of this effect, showing that the electrostatic potential of the molecular layer can be approximated by a discretized planar charge density derived from the molecular structure and multipoles. Solving this model computationally and analytically, we propose implementations of this effect to generate novel electronic properties for electrons in 2D materials, such as band gap opening and anisotropic group velocity modulation for monolayer graphene from experimentally achievable molecular assemblies.
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Submitted 21 September, 2021;
originally announced September 2021.
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Range-Separated Hybrid Functionals for Mixed-Dimensional Heterojunctions: Application to Phthalocyanines/MoS2
Authors:
Qunfei Zhou,
Zhen-Fei Liu,
Tobin J. Marks,
Pierre Darancet
Abstract:
We analyze the electronic structure and level alignment of transition-metal phthalocyanine (MPc) molecules adsorbed on two-dimensional MoS$_2$ employing density functional theory (DFT) calculations. We develop a procedure for multi-objective optimal tuning of parameters of range-separated hybrid functionals in these mixed-dimensional systems. Using this procedure, which leads to the asymptotically…
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We analyze the electronic structure and level alignment of transition-metal phthalocyanine (MPc) molecules adsorbed on two-dimensional MoS$_2$ employing density functional theory (DFT) calculations. We develop a procedure for multi-objective optimal tuning of parameters of range-separated hybrid functionals in these mixed-dimensional systems. Using this procedure, which leads to the asymptotically-correct exchange-correlation potential between molecule and two-dimensional material, we obtain electronic structures consistent with experimental photoemission results for both energy level alignment and electronic bandgaps, representing a significant advance compared to standard DFT methods. We elucidate the MoS$_2$ valence resonance with the transition-metal phthalocyanine non-frontier 3$d$ orbitals and its dependence on the transition metal atomic number. Based on our calculations, we derive parameter-free, model self-energy corrections that quantitatively accounts for the effects of the heterogeneous dielectric environment on the electronic structure of these mixed-dimensional heterojunctions.
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Submitted 25 October, 2021; v1 submitted 18 July, 2021;
originally announced July 2021.
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Giant Optomechanical Coupling in the Charge Density Wave State of Tantalum Disulfide
Authors:
Anubhab Haldar,
Cristian L. Cortes,
Stephen K. Gray,
Sahar Sharifzadeh,
Pierre Darancet
Abstract:
We study the coupling of light and the structural order parameter in the charge density wave (CDW) state of the layered transition-metal dichalcogenide, Tantalum Disulfide ($1T-\mathrm{TaS_2}$). Using time-dependent density functional theory calculations of the dielectric properties along the distortions coordinates, we show that $1T-\mathrm{TaS_2}$ displays very large change in its dielectric fun…
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We study the coupling of light and the structural order parameter in the charge density wave (CDW) state of the layered transition-metal dichalcogenide, Tantalum Disulfide ($1T-\mathrm{TaS_2}$). Using time-dependent density functional theory calculations of the dielectric properties along the distortions coordinates, we show that $1T-\mathrm{TaS_2}$ displays very large change in its dielectric function along the amplitude (Higgs) mode due to the coupling of the periodic lattice distortion with an in-plane metal-insulator transition, leading to optomechanical coupling coefficients two orders of magnitude larger than the ones of diamond and ErFeO$_3$. In addition, we derive an effective model of the light-induced dynamics, which is in quantitative agreement with experimental observations in $1T-\mathrm{TaS_2}$. We show that light-induced dynamics of the structural order parameter in $1T-\mathrm{TaS_2}$ can be deterministically controlled to engineer large third-order non-linear optical susceptibilities. Our findings suggest that CDW materials are promising active materials for non-linear optics.
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Submitted 31 May, 2021; v1 submitted 18 May, 2021;
originally announced May 2021.
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Manipulating topology in tailored artificial graphene nanoribbons
Authors:
Daniel J. Trainer,
Srilok Srinivasan,
Brandon L. Fisher,
Yuan Zhang,
Constance R. Pfeiffer,
Saw-Wai Hla,
Pierre Darancet,
Nathan P. Guisinger
Abstract:
Topological phases of matter give rise to exotic physics that can be leveraged for next generation quantum computation and spintronic devices. Thus, the search for topological phases and the quantum states that they exhibit have become the subject of a massive research effort in condensed matter physics. Topologically protected states have been produced in a variety of systems, including artificia…
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Topological phases of matter give rise to exotic physics that can be leveraged for next generation quantum computation and spintronic devices. Thus, the search for topological phases and the quantum states that they exhibit have become the subject of a massive research effort in condensed matter physics. Topologically protected states have been produced in a variety of systems, including artificial lattices, graphene nanoribbons (GNRs) and bismuth bilayers. Despite these advances, the real-time manipulation of individual topological states and their relative coupling, a necessary feature for the realization of topological qubits, remains elusive. Guided by first-principles calculations, we spatially manipulate robust, zero-dimensional topological states by altering the topological invariants of quasi-one-dimensional artificial graphene nanostructures. This is achieved by positioning carbon monoxide molecules on a copper surface to confine its surface state electrons into artificial atoms positioned to emulate the low-energy electronic structure of graphene derivatives. Ultimately, we demonstrate control over the coupling between adjacent topological states that are finely engineered and simulate complex Hamiltonians. Our atomic synthesis gives access to an infinite range of nanoribbon geometries, including those beyond the current reach of synthetic chemistry, and thus provides an ideal platform for the design and study of novel topological and quantum states of matter.
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Submitted 22 April, 2021;
originally announced April 2021.
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Non-Abelian Stokes theorem and quantized Berry flux
Authors:
Alexander C. Tyner,
Shouvik Sur,
Qunfei Zhou,
Danilo Puggioni,
Pierre Darancet,
James M. Rondinelli,
Pallab Goswami
Abstract:
Band topology of anomalous quantum Hall insulators can be precisely addressed by computing Chern numbers of constituent non-degenerate bands that describe quantized, Abelian Berry flux through two-dimensional Brillouin zone. Can Chern numbers be defined for $SU(2)$ Berry connection of two-fold degenerate bands of materials preserving space-inversion ($\mathcal{P}$) and time-reversal (…
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Band topology of anomalous quantum Hall insulators can be precisely addressed by computing Chern numbers of constituent non-degenerate bands that describe quantized, Abelian Berry flux through two-dimensional Brillouin zone. Can Chern numbers be defined for $SU(2)$ Berry connection of two-fold degenerate bands of materials preserving space-inversion ($\mathcal{P}$) and time-reversal ($\mathcal{T}$) symmetries or combined $\mathcal{PT}$ symmetry, without detailed knowledge of underlying basis? We affirmatively answer this question by employing a non-Abelian generalization of Stokes' theorem and describe a manifestly gauge-invariant method for computing magnitudes of quantized $SU(2)$ Berry flux (spin-Chern number) from eigenvalues of Wilson loops. The power of this method is elucidated by performing $\mathbb{N}$-classification of \emph{ab initio} band structures of three-dimensional, Dirac materials. Our work outlines a unified framework for addressing first-order and higher-order topology of insulators and semimetals, without relying on detailed symmetry data.
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Submitted 29 September, 2022; v1 submitted 11 February, 2021;
originally announced February 2021.
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Inverse Design of a Graphene-Based Quantum Transducer via Neuroevolution
Authors:
Kevin Ryczko,
Pierre Darancet,
Isaac Tamblyn
Abstract:
We introduce an inverse design framework based on artificial neural networks, genetic algorithms, and tight-binding calculations, capable to optimize the very large configuration space of nanoelectronic devices. Our non-linear optimization procedure operates on trial Hamiltonians through superoperators controlling growth policies of regions of distinct do**. We demonstrate that our algorithm opt…
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We introduce an inverse design framework based on artificial neural networks, genetic algorithms, and tight-binding calculations, capable to optimize the very large configuration space of nanoelectronic devices. Our non-linear optimization procedure operates on trial Hamiltonians through superoperators controlling growth policies of regions of distinct do**. We demonstrate that our algorithm optimizes the do** of graphene-based three-terminal devices for valleytronics applications, monotonously converging to synthesizable devices with high merit functions in a few thousand evaluations (out of $\simeq 2^{3800}$ possible configurations). The best-performing device allowed for a terminal-specific separation of valley currents with $\simeq 96$\% ($\simeq 94\%)$ $K$ ($K'$) valley purity. Importantly, the devices found through our non-linear optimization procedure have both higher merit function and higher robustness to defects than the ones obtained through geometry optimization.
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Submitted 24 February, 2021; v1 submitted 14 July, 2020;
originally announced July 2020.
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Monolayer and bilayer perfluoropentacene on Cu(111)
Authors:
S. Smalley,
P. Darancet,
J. R. Guest,
J. A. Smerdon
Abstract:
Perfluoropentacene (PFP), an $n$-type organic semiconductor, is deposited at monolayer and bilayer coverage on Cu(111). Scanning tunneling microscopy at various bias voltages is used to investigate the geometric and electronic structure of the layer. The appearances of the first layer and second layer differ, probably because of perturbation to the first layer electronic structure by the substrate…
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Perfluoropentacene (PFP), an $n$-type organic semiconductor, is deposited at monolayer and bilayer coverage on Cu(111). Scanning tunneling microscopy at various bias voltages is used to investigate the geometric and electronic structure of the layer. The appearances of the first layer and second layer differ, probably because of perturbation to the first layer electronic structure by the substrate. This has been previously observed for pentacene (Pn), the isostructural $p$-type organic semiconductor. The PFP film has a unit cell of (4 -3,3 4) relative to the substrate, which is larger than that of Pn/Cu(111), representing a half-integer increment in each direction.
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Submitted 21 April, 2020;
originally announced April 2020.
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Machine Learning the Metastable Phase Diagram of Materials
Authors:
Srilok Srinivasan,
Rohit Batra,
Duan Luo,
Troy Loeffler,
Sukriti Manna,
Henry Chan,
Liuxiang Yang,
Wenge Yang,
Jianguo Wen,
Pierre Darancet,
Subramanian Sankaranarayanan
Abstract:
Phase diagrams are an invaluable tool for material synthesis and provide information on the phases of the material at any given thermodynamic condition. Conventional phase diagram generation involves experimentation to provide an initial estimate of thermodynamically accessible phases, followed by use of phenomenological models to interpolate between the available experimental data points and extr…
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Phase diagrams are an invaluable tool for material synthesis and provide information on the phases of the material at any given thermodynamic condition. Conventional phase diagram generation involves experimentation to provide an initial estimate of thermodynamically accessible phases, followed by use of phenomenological models to interpolate between the available experimental data points and extrapolate to inaccessible regions. Such an approach, combined with first-principles calculations and data-mining techniques, has led to exhaustive thermodynamic databases albeit at distinct thermodynamic equilibria. In contrast, materials during their synthesis, operation, or processing, may not reach their thermodynamic equilibrium state but, instead, remain trapped in a local free energy minimum, that may exhibit desirable properties. Map** these metastable phases and their thermodynamic behavior is highly desirable but currently lacking. Here, we introduce an automated workflow that integrates first principles physics and atomistic simulations with machine learning (ML), and high-performance computing to allow rapid exploration of the metastable phases of a given elemental composition. Using a representative material, carbon, with a vast number of metastable phases without parent in equilibrium, we demonstrate automatic map** of hundreds of metastable states ranging from near equilibrium to those far-from-equilibrium. Moreover, we incorporate the free energy calculations into a neural-network-based learning of the equations of state that allows for construction of metastable phase diagrams. High temperature high pressure experiments using a diamond anvil cell on graphite sample coupled with high-resolution transmission electron microscopy are used to validate our metastable phase predictions. Our introduced approach is general and broadly applicable to single and multi-component systems.
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Submitted 29 November, 2021; v1 submitted 18 April, 2020;
originally announced April 2020.
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Quantum paraelastic two-dimensional materials
Authors:
Tyler B. Bishop,
Erin E. Farmer,
Afsana Sharmin,
Alejandro Pacheco-Sanjuan,
Pierre Darancet,
Salvador Barraza-Lopez
Abstract:
We study the elastic energy landscape of two-dimensional tin oxide (SnO) monolayers and demonstrate a transition temperature of $T_c=8.5\pm 1.8$ K using ab-initio molecular dynamics (MD), that is close to the value of the elastic energy barrier $J$ derived from $T=0$ K density functional theory calculations. The power spectra of the velocity autocorrelation throughout the MD evolution permits iden…
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We study the elastic energy landscape of two-dimensional tin oxide (SnO) monolayers and demonstrate a transition temperature of $T_c=8.5\pm 1.8$ K using ab-initio molecular dynamics (MD), that is close to the value of the elastic energy barrier $J$ derived from $T=0$ K density functional theory calculations. The power spectra of the velocity autocorrelation throughout the MD evolution permits identifying soft phonon modes likely responsible for the structural transformation. The mean atomic displacements obtained from a Bose-Einstein occupation of the phonon modes suggest the existence of a quantum paraelastic phase that could be tuned with charge do**: SnO monolayers could be 2D quantum paraelastic materials with a charge-tunable quantum phase transition.
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Submitted 12 December, 2018;
originally announced December 2018.
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Anisotropic structural dynamics of monolayer crystals revealed by femtosecond surface x-ray scattering
Authors:
I-Cheng Tung,
Aravind Krishnamoorthy,
Sridhar Sadasivam,
Hua Zhou,
Qi Zhang,
Kyle L. Seyler,
Genevieve Clark,
Ehren M. Mannebach,
Clara Nyby,
Friederike Ernst,
Diling Zhu,
James M. Glownia,
Michael E. Kozina,
Sanghoon Song,
Silke Nelson,
Hiroyuki Kumazoe,
Fuyuki Shimojo,
Rajiv K. Kalia,
Priya Vashishta,
Pierre Darancet,
Tony F. Heinz,
Aiichiro Nakano,
Xiaodong Xu,
Aaron M. Lindenberg,
Haidan Wen
Abstract:
X-ray scattering is one of the primary tools to determine crystallographic configuration with atomic accuracy. However, the measurement of ultrafast structural dynamics in monolayer crystals remains a long-standing challenge due to a significant reduction of diffraction volume and complexity of data analysis, prohibiting the application of ultrafast x-ray scattering to study nonequilibrium structu…
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X-ray scattering is one of the primary tools to determine crystallographic configuration with atomic accuracy. However, the measurement of ultrafast structural dynamics in monolayer crystals remains a long-standing challenge due to a significant reduction of diffraction volume and complexity of data analysis, prohibiting the application of ultrafast x-ray scattering to study nonequilibrium structural properties at the two-dimensional limit. Here, we demonstrate femtosecond surface x-ray diffraction in combination with crystallographic model-refinement calculations to quantify the ultrafast structural dynamics of monolayer WSe$_2$ crystals supported on a substrate. We found the absorbed optical photon energy is preferably coupled to the in-plane lattice vibrations within 2 picoseconds while the out-of-plane lattice vibration amplitude remains unchanged during the first 10 picoseconds. The model-assisted fitting suggests an asymmetric intralayer spacing change upon excitation. The observed nonequilibrium anisotropic structural dynamics in two-dimensional materials agrees with first-principles nonadiabatic modeling in both real and momentum space, marking the distinct structural dynamics of monolayer crystals from their bulk counterparts. The demonstrated methods unlock the benefit of surface sensitive x-ray scattering to quantitatively measure ultrafast structural dynamics in atomically thin materials and across interfaces.
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Submitted 28 November, 2018;
originally announced November 2018.
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Theory of Thermal Relaxation of Electrons in Semiconductors
Authors:
Sridhar Sadasivam,
Maria K. Y. Chan,
Pierre Darancet
Abstract:
We compute the transient dynamics of phonons in contact with high energy "hot" charge carriers in 12 polar and non-polar semiconductors, using a first-principles Boltzmann transport framework. For most materials, we find that the decay in electronic temperature departs significantly from a single-exponential model at times ranging from 1 ps to 15 ps after electronic excitation, a phenomenon concom…
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We compute the transient dynamics of phonons in contact with high energy "hot" charge carriers in 12 polar and non-polar semiconductors, using a first-principles Boltzmann transport framework. For most materials, we find that the decay in electronic temperature departs significantly from a single-exponential model at times ranging from 1 ps to 15 ps after electronic excitation, a phenomenon concomitant with the appearance of non-thermal vibrational modes. We demonstrate that these effects result from the slow thermalization within the phonon subsystem, caused by the large heterogeneity in the timescales of electron-phonon and phonon-phonon interactions in these materials. We propose a generalized 2-temperature model accounting for the phonon thermalization as a limiting step of electron-phonon thermalization, which captures the full thermal relaxation of hot electrons and holes in semiconductors. A direct consequence of our findings is that, for semiconductors, information about the spectral distribution of electron-phonon and phonon-phonon coupling can be extracted from the multi-exponential behavior of the electronic temperature.
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Submitted 1 September, 2017;
originally announced September 2017.
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Spatially-resolved, substrate-induced rectification in C$_{60}$ bilayers on copper
Authors:
Joe Smerdon,
Pierre Darancet,
Jeffrey Guest
Abstract:
We demonstrate rectification ratios ($RR$) of $\gtrsim$1000 at biases of 1.3~V in bilayers of \buck deposited on copper. Using scanning tunneling spectroscopy and first-principles calculations, we show that the strong coupling between \buck and the Cu(111) surface leads to the metallization of the bottom \buck layer, while the molecular orbitals of the top \buck are essentially unaffected. Due to…
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We demonstrate rectification ratios ($RR$) of $\gtrsim$1000 at biases of 1.3~V in bilayers of \buck deposited on copper. Using scanning tunneling spectroscopy and first-principles calculations, we show that the strong coupling between \buck and the Cu(111) surface leads to the metallization of the bottom \buck layer, while the molecular orbitals of the top \buck are essentially unaffected. Due to this substrate-induced symmetry breaking and to a tunneling transport mechanism, the system behaves as a hole-blocking layer, with a spatial dependence of the onset voltage on intra-layer coordination. Together with previous observations of strong electron-blocking character of pentacene/\buck bilayers on Cu(111), this work further demonstrates the potential of strongly-hybridized, \buck-coated electrodes to harness the electrical functionality of molecular components.
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Submitted 1 March, 2017;
originally announced March 2017.
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Large spatially-resolved rectification in a donor-acceptor molecular heterojunction
Authors:
Joseph A. Smerdon,
Noel C. Giebink,
Nathan P. Guisinger,
Pierre Darancet,
Jeffrey R. Guest
Abstract:
We demonstrate that rectification ratios (RR) of >250 (>1000) at biases of 0.5 V (1.2 V) are achievable at the two-molecule limit for donor-acceptor bilayers of pentacene on fullerene on Cu using scanning tunneling spectroscopy and microscopy. Using first-principles calculations, we show that the system behaves as a molecular Schottky diode with a tunneling transport mechanism from semiconducting…
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We demonstrate that rectification ratios (RR) of >250 (>1000) at biases of 0.5 V (1.2 V) are achievable at the two-molecule limit for donor-acceptor bilayers of pentacene on fullerene on Cu using scanning tunneling spectroscopy and microscopy. Using first-principles calculations, we show that the system behaves as a molecular Schottky diode with a tunneling transport mechanism from semiconducting pentacene to Cu-hybridized metallic fullerene. Low-bias RRs vary by two orders-of-magnitude at the edge of these molecular heterojunctions due to increased Stark shifts and confinement effects.
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Submitted 21 March, 2016;
originally announced March 2016.
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Adsorption-Induced Solvent-Based Electrostatic Gating of Charge Transport through Molecular Junctions
Authors:
Michele Kotiuga,
Pierre Darancet,
Carlos R. Arroyo,
Latha Venkataraman,
Jeffrey B. Neaton
Abstract:
Recent experiments have shown that transport properties of molecular-scale devices can be reversibly altered by the surrounding solvent. Here, we use a combination of first-principles calculations and experiment to explain this change in transport properties through a shift in the local electrostatic potential at the junction caused by nearby conducting and solvent molecules chemically bound to th…
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Recent experiments have shown that transport properties of molecular-scale devices can be reversibly altered by the surrounding solvent. Here, we use a combination of first-principles calculations and experiment to explain this change in transport properties through a shift in the local electrostatic potential at the junction caused by nearby conducting and solvent molecules chemically bound to the electrodes. This effect is found to alter the conductance of bipyridine - gold junctions by more than 50%. Moreover, we develop a general electrostatic model that quantitatively predicts the relationship between conductance and the binding energies and dipoles of the solvent and conducting molecules. Our work shows that solvent induced effects are a viable route for controlling charge and energy transport at molecular-scale interfaces.
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Submitted 6 October, 2014;
originally announced October 2014.
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Three Dimensional Metallic and Two Dimensional Insulating Behavior in Tantalum Dichalcogenides
Authors:
Pierre Darancet,
Andrew J. Millis,
Chris A. Marianetti
Abstract:
Using density functional theory with added on-site interactions (DFT+U), we study the electronic structure of bulk, monolayer, and bilayer of the layered transition-metal dichalcogenide $1T-TaS_2$. We show that a two-dimensional spin--$\frac{1}{2}$ Mott-phase exists for the monolayer in the charge-density wave state (CDW) and that such a phase is systematically destroyed by packing of the distorte…
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Using density functional theory with added on-site interactions (DFT+U), we study the electronic structure of bulk, monolayer, and bilayer of the layered transition-metal dichalcogenide $1T-TaS_2$. We show that a two-dimensional spin--$\frac{1}{2}$ Mott-phase exists for the monolayer in the charge-density wave state (CDW) and that such a phase is systematically destroyed by packing of the distorted layers leading to a one dimensional metal for bulk, CDW-distorted TaS$_2$. The latter finding is in contrast with previous DMFT predictions --disagreement we explain by the weak effective interaction felt by the electrons in the CDW state. Experimental observations of insulating behavior may arise from disorder due to stacking faults.
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Submitted 31 December, 2013;
originally announced January 2014.
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Quantitative Current-Voltage Characteristics in Molecular Junctions from First Principles
Authors:
Pierre Darancet,
Jonathan R. Widawsky,
Hyoung Joon Choi,
Latha Venkataraman,
Jeffrey B. Neaton
Abstract:
Using self-energy-corrected density functional theory (DFT) and a coherent scattering-state approach, we explain current-voltage (IV) measurements of four pyridine-Au and amine-Au linked molecular junctions with quantitative accuracy. Parameter-free many-electron self-energy corrections to DFT Kohn-Sham eigenvalues are demonstrated to lead to excellent agreement with experiments at finite bias, im…
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Using self-energy-corrected density functional theory (DFT) and a coherent scattering-state approach, we explain current-voltage (IV) measurements of four pyridine-Au and amine-Au linked molecular junctions with quantitative accuracy. Parameter-free many-electron self-energy corrections to DFT Kohn-Sham eigenvalues are demonstrated to lead to excellent agreement with experiments at finite bias, improving upon order-of-magnitude errors in currents obtained with standard DFT approaches. We further propose an approximate route for prediction of quantitative IV characteristics for both symmetric and asymmetric molecular junctions based on linear response theory and knowledge of the Stark shifts of junction resonance energies. Our work demonstrates that a quantitative, computationally inexpensive description of coherent transport in molecular junctions is readily achievable, enabling new understanding and control of charge transport properties of molecular-scale interfaces at large bias voltages.
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Submitted 30 November, 2012;
originally announced December 2012.
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Quantitative Molecular Orbital Energies within a $G_0W_0$ Approximation
Authors:
Sahar Sharifzadeh,
Isaac Tamblyn,
Peter Doak,
Pierre T. Darancet,
Jeffrey B. Neaton
Abstract:
Using many-body perturbation theory within the $G_0W_0$ approximation, we explore routes for computing the ionization potential (IP), electron affinity (EA), and fundamental gap of three gas-phase molecules -- benzene, thiophene, and (1,4) diamino-benzene -- and compare with experiments. We examine the dependence of the IP on the number of unoccupied states used to build the dielectric function an…
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Using many-body perturbation theory within the $G_0W_0$ approximation, we explore routes for computing the ionization potential (IP), electron affinity (EA), and fundamental gap of three gas-phase molecules -- benzene, thiophene, and (1,4) diamino-benzene -- and compare with experiments. We examine the dependence of the IP on the number of unoccupied states used to build the dielectric function and the self energy, as well as the dielectric function plane-wave cutoff. We find that with an effective completion strategy for approximating the unoccupied subspace, and a converged dielectric function kinetic energy cutoff, the computed IPs and EAs are in excellent quantitative agreement with available experiment (within 0.2 eV), indicating that a one-shot $G_0W_0$ approach can be very accurate for calculating addition/removal energies of small organic molecules. Our results indicate that a sufficient dielectric function kinetic energy cutoff may be the limiting step for a wide application of $G_0W_0$ to larger organic systems.
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Submitted 2 April, 2012;
originally announced April 2012.
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Simultaneous Determination of Conductance and Thermopower of Single Molecule Junctions
Authors:
J. R. Widawsky,
P. Darancet,
J. B. Neaton,
L. Venkataraman
Abstract:
We report the first concurrent determination of conductance (G) and thermopower (S) of single-molecule junctions via direct measurement of electrical and thermoelectric currents using a scanning tunneling microscope-based break-junction technique. We explore several amine-Au and pyridine-Au linked molecules that are predicted to conduct through either the highest occupied molecular orbital (HOMO)…
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We report the first concurrent determination of conductance (G) and thermopower (S) of single-molecule junctions via direct measurement of electrical and thermoelectric currents using a scanning tunneling microscope-based break-junction technique. We explore several amine-Au and pyridine-Au linked molecules that are predicted to conduct through either the highest occupied molecular orbital (HOMO) or the lowest unoccupied molecular orbital (LUMO), respectively. We find that the Seebeck coefficient is negative for pyridine-Au linked LUMO-conducting junctions and positive for amine-Au linked HOMO-conducting junctions. Within the accessible temperature gradients (<30 K), we do not observe a strong dependence of the junction Seebeck coefficient on temperature. From histograms of 1000's of junctions, we use the most probable Seebeck coefficient to determine a power factor, GS^2, for each junction studied, and find that GS^2 increases with G. Finally, we find that conductance and Seebeck coefficient values are in good quantitative agreement with our self-energy corrected density functional theory calculations.
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Submitted 9 January, 2012;
originally announced January 2012.
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Electronic energy level alignment at metal-molecule interfaces with a GW approach
Authors:
Isaac Tamblyn,
Pierre Darancet,
Su Ying Quek,
Stanimir A. Bonev,
Jeffrey B. Neaton
Abstract:
Using density functional theory and many-body perturbation theory within a GW approximation, we calculate the electronic structure of a metal-molecule interface consisting of benzene diamine (BDA) adsorbed on Au(111). Through direct comparison with photoemission data, we show that a conventional G$_0$W$_0$ approach can underestimate the energy of the adsorbed molecular resonance relative to the Au…
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Using density functional theory and many-body perturbation theory within a GW approximation, we calculate the electronic structure of a metal-molecule interface consisting of benzene diamine (BDA) adsorbed on Au(111). Through direct comparison with photoemission data, we show that a conventional G$_0$W$_0$ approach can underestimate the energy of the adsorbed molecular resonance relative to the Au Fermi level by up to 0.8 eV. The source of this discrepancy is twofold: a 0.7 eV underestimate of the gas phase ionization energy (IE), and a 0.2 eV overestimate of the Au work function. Refinements to self-energy calculations within the GW framework that account for deviations in both the Au work function and BDA gas-phase IE can result in an interfacial electronic level alignment in quantitative agreement with experiment.
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Submitted 10 November, 2011;
originally announced November 2011.
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Quantum transport through resistive nanocontacts: Effective one-dimensional theory and conductance formulas for non-ballistic leads
Authors:
Pierre Darancet,
Valerio Olevano,
Didier Mayou
Abstract:
We introduce a new quantum transport formalism based on a map of a real 3-dimensional lead-conductor-lead system into an effective 1-dimensional system. The resulting effective 1D theory is an in principle exact formalism to calculate the conductance. Besides being more efficient than the principal layers approach, it naturally leads to a 5-partitioned workbench (instead of 3) where each part of t…
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We introduce a new quantum transport formalism based on a map of a real 3-dimensional lead-conductor-lead system into an effective 1-dimensional system. The resulting effective 1D theory is an in principle exact formalism to calculate the conductance. Besides being more efficient than the principal layers approach, it naturally leads to a 5-partitioned workbench (instead of 3) where each part of the device (the true central device, the ballistic and the non-ballistic leads) is explicitely treated, allowing better physical insight into the contact resistance mechanisms. Independently, we derive a generalized Fisher-Lee formula and a generalized Meir-Wingreen formula for the correlated and uncorrelated conductance and current of the system where the initial restrictions to ballistic leads are generalized to the case of resistive contacts. We present an application to graphene nanoribbons.
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Submitted 11 March, 2010; v1 submitted 4 March, 2009;
originally announced March 2009.
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Coherent electronic transport through graphene constrictions: sub-wavelength regime and optical analogies
Authors:
Pierre Darancet,
Valerio Olevano,
Didier Mayou
Abstract:
Graphene two-dimensional nature combined with today lithography allows to achieve nanoelectronics devices smaller than the Dirac electrons wavelength. Here we show that in these graphene subwavelength nanodevices the electronic quantum transport properties present deep analogies with classical phenomena of subwavelength optics. By introducing the concept of electronic diffraction barrier to repr…
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Graphene two-dimensional nature combined with today lithography allows to achieve nanoelectronics devices smaller than the Dirac electrons wavelength. Here we show that in these graphene subwavelength nanodevices the electronic quantum transport properties present deep analogies with classical phenomena of subwavelength optics. By introducing the concept of electronic diffraction barrier to represent the effect of constrictions, we can easily describe the rich transport physics in a wealth of nanodevices: from Bethe and Kirchhoff diffraction in graphene slits, to Fabry-Perot interference oscillations in nanoribbons. The same concept applies to graphene quantum dots and gives new insigth into recent experiments on these systems.
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Submitted 6 October, 2008;
originally announced October 2008.
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Graphene nanodevices: bridging nanoelectronics and subwavelength optics
Authors:
Pierre Darancet,
Valerio Olevano,
Didier Mayou
Abstract:
The unconventional properties of graphene, with a massless Dirac band dispersion and large coherence properties, have raised a large interest for applications in nanoelectronics. In this work, we emphasize that graphene two dimensional character combined with current standard lithography processes allow to achieve devices smaller than the Dirac electrons wavelength. In this regime, we demonstrat…
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The unconventional properties of graphene, with a massless Dirac band dispersion and large coherence properties, have raised a large interest for applications in nanoelectronics. In this work, we emphasize that graphene two dimensional character combined with current standard lithography processes allow to achieve devices smaller than the Dirac electrons wavelength. In this regime, we demonstrate that the electronic properties present deep analogies with subwavelength optics phenomena. We describe the rich transport physics in graphene-based nanodevices through optical analogies: From the Bethe and Kirchhoff-like diffraction patterns in the conductance of graphene slits to the Fabry-Perot oscillations of the conductance in nanoribbons. We introduce the concept of {\it electronic diffraction barriers}, which transmission cancels at the Dirac point. This gives central insight in the properties of Graphene subwavelength devices including nanoelectronics standard systems, such as quantum dots. As an application we propose a new type of quantum dots, namely functionalized subwavelength quantum dots, which could be used as molecular spin valves.
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Submitted 26 August, 2008;
originally announced August 2008.
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Quenching of quantum Hall effect and the role of undoped planes in multilayered epitaxial graphene
Authors:
Pierre Darancet,
Nicolas Wipf,
Claire Berger,
Walt de Heer,
Didier Mayou
Abstract:
We propose a mechanism for the quenching of the Shubnikov de Haas oscillations and the quantum Hall effect observed in epitaxial graphene. Experimental data show that the scattering time of the conduction electron is magnetic field dependent and of the order of the cyclotron orbit period, \textit{i.e.} can be much smaller than the zero field scattering time. Our scenario involves the extraordina…
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We propose a mechanism for the quenching of the Shubnikov de Haas oscillations and the quantum Hall effect observed in epitaxial graphene. Experimental data show that the scattering time of the conduction electron is magnetic field dependent and of the order of the cyclotron orbit period, \textit{i.e.} can be much smaller than the zero field scattering time. Our scenario involves the extraordinary graphene $n=0$ Landau level of the uncharged layers that produces a high density of states at the Fermi level. We find that the coupling between this $n=0$ Landau level and the conducting states of the doped plane leads to a scattering mechanism having the right magnitude to explain the experimental data.
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Submitted 13 May, 2008; v1 submitted 6 November, 2007;
originally announced November 2007.
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Ab initio GW electron-electron interaction effects in Quantum Transport
Authors:
Pierre Darancet,
Andrea Ferretti,
Didier Mayou,
Valerio Olevano
Abstract:
We present an ab initio approach to electronic transport in nanoscale systems which includes electronic correlations through the GW approximation. With respect to Landauer approaches based on density-functional theory (DFT), we introduce a physical quasiparticle electronic-structure into a non-equilibrium Green's function theory framework. We use an equilibrium non-selfconsistent $G^0W^0$ self-e…
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We present an ab initio approach to electronic transport in nanoscale systems which includes electronic correlations through the GW approximation. With respect to Landauer approaches based on density-functional theory (DFT), we introduce a physical quasiparticle electronic-structure into a non-equilibrium Green's function theory framework. We use an equilibrium non-selfconsistent $G^0W^0$ self-energy considering both full non-hermiticity and dynamical effects. The method is applied to a real system, a gold mono-atomic chain. With respect to DFT results, the conductance profile is modified and reduced by to the introduction of diffusion and loss-of-coherence effects. The linear response conductance characteristic appear to be in agreement with experimental results.
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Submitted 15 November, 2006;
originally announced November 2006.