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HPRL -- International cooperation to identify and monitor priority nuclear data needs for nuclear applications
Authors:
E. Dupont,
M. Bossant,
R. Capote,
A. D. Carlson,
Y. Danon,
M. Fleming,
Z. Ge,
H. Harada,
O. Iwamoto,
N. Iwamoto,
A. Kimura,
A. J. Koning,
C. Massimi,
A. Negret,
G. Noguere,
A. Plompen,
V. Pronyaev,
G. Rimpault,
S. Simakov,
A. Stankovskiy,
W. Sun,
A. Trkov,
H. Wu,
K. Yokoyama
Abstract:
The OECD-NEA High Priority Request List (HPRL) is a point of reference to guide and stimulate the improvement of nuclear data for nuclear energy and other applications, and a tool to bridge the gap between data users and producers. The HPRL is application-driven and the requests are submitted by nuclear data users or representatives of the user's communities. A panel of international experts revie…
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The OECD-NEA High Priority Request List (HPRL) is a point of reference to guide and stimulate the improvement of nuclear data for nuclear energy and other applications, and a tool to bridge the gap between data users and producers. The HPRL is application-driven and the requests are submitted by nuclear data users or representatives of the user's communities. A panel of international experts reviews and monitors the requests in the framework of an Expert Group mandated by the NEA Nuclear Science Committee Working Party on International Nuclear Data Evaluation Cooperation (WPEC). After approval, individual requests are classified to three categories: high priority requests, general requests, and special purpose requests (e.g., dosimetry, standards). The HPRL is hosted by the NEA in the form of a relational database publicly available on the web. This paper provides an overview of HPRL entries, status and outlook. Examples of requests successfully completed are given and new requests are described with emphasis on updated nuclear data needs in the fields of nuclear energy, neutron standards and dosimetry.
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Submitted 14 April, 2020;
originally announced April 2020.
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Cadmium Resonance Parameters from Neutron Capture and Transmission Measurements at the RPI LINAC
Authors:
G. Leinweber,
D. P. Barry,
R. C. Block,
J. A. Burke,
K. E. Remley,
M. J. Rapp,
Y. Danon
Abstract:
Cadmium has been used historically as an important component of integral experiments because of its high thermal neutron absorption cross section. Correct interpretation of such experiments depends on accurate differential neutron cross section measurements. The 60 MeV electron accelerator at the Gaerttner LINAC Center was used to generate neutrons for neutron capture and total cross section measu…
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Cadmium has been used historically as an important component of integral experiments because of its high thermal neutron absorption cross section. Correct interpretation of such experiments depends on accurate differential neutron cross section measurements. The 60 MeV electron accelerator at the Gaerttner LINAC Center was used to generate neutrons for neutron capture and total cross section measurements of natural Cd. Measurements were performed in the thermal and epithermal resonance range with sample thicknesses ranging from 1 x 10-4 to 4 x 10-2 atoms per barn. A full resonance region analysis was performed in order to determine the thermal cross sections and resonance integrals of the cadmium isotopes. The Bayesian R-Matrix code SAMMY 8.0 was used to shape fit the data and extract the resonance parameters. Resonance parameter and cross section uncertainties were determined from their primary components: transmission background, capture normalization, experimental resolution function, burst width, sample thickness, and counting statistics. The experiments were analyzed for consistency within the measured capture and transmission using multiple sample thicknesses. Results are compared to previously published measurements and evaluated nuclear libraries. No major changes to the thermal cross section or the first resonance in Cd113 were identified from the consensus achieved from measurements and evaluations over the past decade.
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Submitted 10 January, 2018;
originally announced January 2018.
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Solid-state neutron detectors based on thickness scalable hexagonal boron nitride
Authors:
Kawser Ahmed,
Rajendra Dahal,
Adam Weltz,
James J. -Q. Lu,
Yaron Danon,
Ishwara B. Bhat
Abstract:
This paper reports on the device processing and characterization of hexagonal boron nitride (hBN) based solid-state thermal neutron detectors, where hBN thickness varied from 2.5 to 15 microns. These natural hBN epilayers (with 19.9% B-10) were grown by a low pressure chemical vapor deposition process. Complete dry processing was adopted for the fabrication of these metal-semiconductor-metal (MSM)…
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This paper reports on the device processing and characterization of hexagonal boron nitride (hBN) based solid-state thermal neutron detectors, where hBN thickness varied from 2.5 to 15 microns. These natural hBN epilayers (with 19.9% B-10) were grown by a low pressure chemical vapor deposition process. Complete dry processing was adopted for the fabrication of these metal-semiconductor-metal (MSM) configuration detectors. These detectors showed intrinsic thermal neutron detection efficiency values of 0.86%, 2.4%, 3.15%, and 4.71% for natural hBN thickness values of 2.5, 7.5, 10, and 15 microns, respectively. Measured efficiencies are very close (more than 92%) to the theoretical maximum efficiencies for corresponding hBN thickness values for these detectors. This clearly shows the hBN thickness scalability of these detectors. A 15-micron thick hBN based MSM detector is expected to yield an efficiency of 21.4%, if enriched hBN (with ~100% B-10) is used instead of natural hBN. These results demonstrate that the fabrication of hBN thickness scalable highly efficient thermal neutron detectors is possible.
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Submitted 11 October, 2016;
originally announced October 2016.
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Metalorganic chemical vapor deposition of hexagonal boron nitride on (001) sapphire substrates for thermal neutron detector applications
Authors:
Kawser Ahmed,
Rajendra Dahal,
Adam Weltz,
James J. -Q. Lu,
Yaron Danon,
Ishwara B. Bhat
Abstract:
This paper reports on the growth and characterization of hexagonal boron nitride (hBN) and its use for solid-state thermal neutron detection. The hBN epilayers were grown by metalorganic chemical vapor deposition on sapphire substrates at a temperature of 1350 C. X-ray diffraction peak from the (002) hBN plane at a 2theta angle of 26.7 deg exhibited the c-lattice constant of 6.66 Å for these films…
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This paper reports on the growth and characterization of hexagonal boron nitride (hBN) and its use for solid-state thermal neutron detection. The hBN epilayers were grown by metalorganic chemical vapor deposition on sapphire substrates at a temperature of 1350 C. X-ray diffraction peak from the (002) hBN plane at a 2theta angle of 26.7 deg exhibited the c-lattice constant of 6.66 Å for these films. A strong peak corresponding to the high frequency Raman active mode of hBN was found for the films at 1370.5/cm. hBN-based solid-state neutron detectors were fabricated and tested with a metal-semiconductor-metal configuration with an electrode spacing of 1 mm and hBN thickness of 2.5 micron. Fabricated detectors showed strong response to deep UV light as well. An intrinsic thermal neutron detection efficiency of 0.86% was measured, which is close to the theoretically expected efficiency of 0.87%. These results demonstrate that epitaxial hBN films are promising for thermal neutron detection applications.
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Submitted 8 September, 2016;
originally announced September 2016.
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Effects of sapphire nitridation and growth temperature on the epitaxial growth of hexagonal boron nitride on sapphire
Authors:
Kawser Ahmed,
Rajendra Dahal,
Adam Weltz,
James J. -Q. Lu,
Yaron Danon,
Ishwara B. Bhat
Abstract:
This paper reports on the epitaxial growth of hexagonal boron nitride (hBN) films on sapphire substrates in a cold wall chemical vapor deposition (CVD) system where different sapphire nitridation and hBN growth temperatures were employed. A thin and amorphous nitridated layer was formed at a low temperature (850 C), which enabled subsequent epitaxial hBN growth at 1350 C. The influences of the sap…
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This paper reports on the epitaxial growth of hexagonal boron nitride (hBN) films on sapphire substrates in a cold wall chemical vapor deposition (CVD) system where different sapphire nitridation and hBN growth temperatures were employed. A thin and amorphous nitridated layer was formed at a low temperature (850 C), which enabled subsequent epitaxial hBN growth at 1350 C. The influences of the sapphire nitridation temperature and the growth temperature on the film quality were analyzed by X-ray diffraction (XRD) measurements. Higher than optimum nitridation and growth temperatures improve the crystalline quality of the nitridated layer, but does not favor the epitaxial growth of hBN. hBN films grown at the optimum conditions exhibit the c-lattice constant of 6.66 Å from the XRD θ-2θ scan, and the characteristic in plane stretching vibration at 1370.5/cm from Raman spectroscopy. X-ray photoelectron spectroscopy analysis confirmed the formation of stoichiometric hBN films with excellent uniformity.
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Submitted 3 September, 2016;
originally announced September 2016.
