-
Photocurrents in bulk tellurium
Authors:
M. D. Moldavskaya,
L. E. Golub,
S. N. Danilov,
V. V. Bel'kov,
D. Weiss,
S. D. Ganichev
Abstract:
We report a comprehensive study of polarized infrared/terahertz photocurrents in bulk tellurium crystals. We observe different photocurrent contributions and show that, depending on the experimental conditions, they are caused by the trigonal photogalvanic effect, the transverse linear photon drag effect, and the magnetic field induced linear and circular photogalvanic effects. All observed photoc…
▽ More
We report a comprehensive study of polarized infrared/terahertz photocurrents in bulk tellurium crystals. We observe different photocurrent contributions and show that, depending on the experimental conditions, they are caused by the trigonal photogalvanic effect, the transverse linear photon drag effect, and the magnetic field induced linear and circular photogalvanic effects. All observed photocurrents have not been reported before and are well explained by the developed phenomenological and microscopic theory. We show that the effects can be unambiguously distinguished by studying the polarization, magnetic field, and radiation frequency dependence of the photocurrent. At frequencies around 30 THz, the photocurrents are shown to be caused by the direct optical transitions between subbands in the valence band. At lower frequencies of 1 to 3 THz, used in our experiment, these transitions become impossible and the detected photocurrents are caused by the indirect optical transitions (Drude-like radiation absorption).
△ Less
Submitted 6 December, 2023; v1 submitted 24 August, 2023;
originally announced August 2023.
-
Search for possible alpha-condensate states in $^{20}$Ne
Authors:
A. S. Demyanova,
A. N. Danilov,
S. A. Goncharov,
V. I. Starastsin,
T. I Leonova
Abstract:
The root mean square radii of $^{20}$Ne in the short-lived excited states were experimentally deduced for the first time from the analyses of $α$+$^{20}$Ne diffraction scattering. Differential cross sections of the elastic and inelastic $α$+$^{20}$Ne scattering in the incident energy range from a few MeV/nucleon up to 100 MeV/nucleon were analyzed by the modified diffraction model. No significant…
▽ More
The root mean square radii of $^{20}$Ne in the short-lived excited states were experimentally deduced for the first time from the analyses of $α$+$^{20}$Ne diffraction scattering. Differential cross sections of the elastic and inelastic $α$+$^{20}$Ne scattering in the incident energy range from a few MeV/nucleon up to 100 MeV/nucleon were analyzed by the modified diffraction model. No significant radius enhancement for the members of K$^π$ = 0$_{1}^{+}$ and K$^π$ = 2$^{-}$ bands in comparison with the ground state was observed. At the same time 20 % radius enhancement was obtained for the K$^π$ = 0$_{1}^{-}$ band members. Moreover, for the 0$_{2}^{+}$ state located above $α$-emission threshold increased radius was observed. This result can speak in favor of possible $α$-condensate structure of the 0$_{2}^{+}$ state and can be considered as a possible analog of the famous 7.65-MeV 0$_{2}^{+}$ Hoyle state of $^{12}$C.
△ Less
Submitted 19 June, 2022;
originally announced June 2022.
-
Highly superlinear photogalvanic effects in (Bi$_{0.3}$Sb$_{0.7}$)$_2$(Te$_{0.1}$Se$_{0.9}$)$_3$: Probing 3D topological insulator surface states at room temperature
Authors:
Sergey N. Danilov,
Leonid E. Golub,
Thomas Mayer,
Andreas Beer,
Stefan Binder,
Erwin Mönch,
Jan Minar,
Matthias Kronseder,
Christian. H. Back,
Dominique Bougeard,
Sergey D. Ganichev
Abstract:
We report on the observation of complex nonlinear intensity dependence of the circular and linear photogalvanic currents induced by infrared radiation in compensated (Bi$_{0.3}$Sb$_{0.7}$)$_2$(Te$_{0.1}$Se$_{0.9}$)$_3$ 3D topological insulators. The photocurrents are induced by direct optical transitions between topological surface and bulk states. We show that an increase of the radiation intensi…
▽ More
We report on the observation of complex nonlinear intensity dependence of the circular and linear photogalvanic currents induced by infrared radiation in compensated (Bi$_{0.3}$Sb$_{0.7}$)$_2$(Te$_{0.1}$Se$_{0.9}$)$_3$ 3D topological insulators. The photocurrents are induced by direct optical transitions between topological surface and bulk states. We show that an increase of the radiation intensity results first in a highly superlinear raise of the amplitude of both types of photocurrents, whereas at higher intensities the photocurrent saturates. Our analysis of the observed nonlinearities shows that the superlinear behavior of the photocurrents is caused by a heating of the electron gas, while the saturation is induced by a slow relaxation of the photoexcited carriers resulting in absorbance bleaching. The observed nonlinearities give access to the Fermi level position with respect to the Dirac point and the energy relaxation times of Dirac fermions providing an experimental room temperature probe for topological surface states.
△ Less
Submitted 3 August, 2021;
originally announced August 2021.
-
Spin-parity of the 13.35 MeV state and high-lying states around 20 MeV in excitation energy in $^{12}$C nucleus
Authors:
A. S. Demyanova,
V. I. Starastsin,
A. A. Ogloblin,
A. N. Danilov,
S. V. Dmitriev,
W. H. Trzaska,
P. Heikkinen,
T. L. Belyaeva,
S. A. Goncharov,
V. A. Maslov,
Yu. G. Sobolev,
Yu. B. Gurov,
N. Burtebaev,
D. Janseitov
Abstract:
Study of the $^{11}$B($^{3}$He,d)$^{12}$C reaction at incident $^{3}$He energy E$_{lab}$ = 25 MeV has been performed at the K-130 cyclotron at the University of Jyväskylä, Finland. Differential cross sections have been measured for the 13.35 MeV state and for the states with excitation energy around 20 MeV. The data were analyzed with the DWBA method. A tentative assignment, 4$^{-}$, is given for…
▽ More
Study of the $^{11}$B($^{3}$He,d)$^{12}$C reaction at incident $^{3}$He energy E$_{lab}$ = 25 MeV has been performed at the K-130 cyclotron at the University of Jyväskylä, Finland. Differential cross sections have been measured for the 13.35 MeV state and for the states with excitation energy around 20 MeV. The data were analyzed with the DWBA method. A tentative assignment, 4$^{-}$, is given for the state at 13.35 MeV. For the state at 20.98 MeV, the spin-parity 3$^{-}$ and the isospin T = 0 are assigned for the first time. Our model description of the broad state at 21.6 MeV is consistent with the previous assignments of isospin T = 0 and spin-parity of 2$^{+}$ and 3$^{-}$. The excited state at 22.4 MeV may have possible spin-parities of either 6$^{+}$ or 5$^{-}$. The collected statistics was insufficient to solve this question.
△ Less
Submitted 2 April, 2020;
originally announced April 2020.
-
States of $^{12}$N with enhanced radii
Authors:
A. S. Demyanova,
A. N. Danilov,
A. A. Ogloblin,
V. I. Starastsin,
S. V. Dmitriev,
W. H. Trzaska,
S. A. Goncharov,
T. L. Belyaeva,
V. A. Maslov,
Yu. G. Sobolev,
Yu. E. Penionzhkevich,
S. V. Khlebnikov,
G. P. Tyurin,
N. Burtebaev,
D. Janseitov,
Yu. B. Gurov,
J. Louko,
V. M. Sergeev
Abstract:
The differential cross sections of the $^{12}$C($^3$He,t)$^{12}$N reaction leading to formation of the 1$^+$ (ground state), 2$^+$(0.96 MeV), 2$^{-}$(1.19 MeV), and 1$^{-}$(1.80 MeV) states of $^{12}$N are measured at $E$($^3$He)=40 MeV. The analysis of the data is carried out within the modified diffraction model (MDM) and distorted wave Born approximation (DWBA). Enhanced $rms$ radii were obtain…
▽ More
The differential cross sections of the $^{12}$C($^3$He,t)$^{12}$N reaction leading to formation of the 1$^+$ (ground state), 2$^+$(0.96 MeV), 2$^{-}$(1.19 MeV), and 1$^{-}$(1.80 MeV) states of $^{12}$N are measured at $E$($^3$He)=40 MeV. The analysis of the data is carried out within the modified diffraction model (MDM) and distorted wave Born approximation (DWBA). Enhanced $rms$ radii were obtained for the ground, 2$^{-}$(1.19 MeV), and 1$^{-}$(1.80 MeV) states. We revealed that $^{12}$B, $^{12}$N, and $^{12}$C in the IAS with T=1, and spin-parities 2$^{-}$ and 1$^{-}$ have increased radii and exhibit properties of neutron and proton halo states.
△ Less
Submitted 14 March, 2020;
originally announced March 2020.
-
Observation of anomalously strong penetration of terahertz electric field through terahertz-opaque gold films into a GaAs/AlGaAs quantum well
Authors:
S. D. Ganichev,
S. N. Danilov,
M. Kronseder,
D. Schuh,
I. Gronwald,
D. Bougeard,
E. L. Ivchenko,
A. Ya. Shul'man
Abstract:
We observe an anomalously high electric field of terahertz (THz) radiation acting on a two-dimensional electron gas (2DEG) placed beneath a thin gold film, which, however, is supposed to be opaque at THz frequencies. We show that the anomalously strong penetration of the THz electric field through a very high conductive gold film emerges if two conditions are fulfilled simultaneously: (i) the film…
▽ More
We observe an anomalously high electric field of terahertz (THz) radiation acting on a two-dimensional electron gas (2DEG) placed beneath a thin gold film, which, however, is supposed to be opaque at THz frequencies. We show that the anomalously strong penetration of the THz electric field through a very high conductive gold film emerges if two conditions are fulfilled simultaneously: (i) the film's thickness is less than the skin depth and (ii) the THz electric field is measured beneath the film at distances substantially smaller than the radiation wavelength. We demonstrate that under these conditions the strength of the field acting on a 2DEG is almost the same as it would be in the absence of the gold film. The effect is detected for macroscopically homogeneous perforation-free gold films illuminated by THz-laser radiation with a spot smaller than the film area. This eliminates the near-field of the edge diffraction as a possible cause of the anomalous penetration. The microscopic origin of the effect remains unexplained in its details, yet. The observed effect can be used for the development of THz devices based on two-dimensional materials requiring robust highly conducting top gates placed at less than nanometer distance from the electron gas location.
△ Less
Submitted 3 June, 2020; v1 submitted 16 February, 2020;
originally announced February 2020.
-
Time resolution and dynamic range of field effect transistor based terahertz detectors
Authors:
Przemyslaw Zagrajek,
Sergey N. Danilov,
Jacek Marczewski,
Michal Zaborowski,
Cezary Kolacinski,
Dariusz Obrebski,
Pawel Kopyt,
Bartlomiej Salski,
Dmytro But,
Wojciech Knap,
Sergey D. Ganichev
Abstract:
We studied time resolution and response power dependence of three terahertz detectors based on significantly different types of field effect transistors. We analyzed the photoresponse of custom-made Si junctionless FETs, Si MOSFETs and GaAs-based high electron mobility transistors detectors. Applying monochromatic radiation of high power, pulsed, line-tunable molecular THz laser, which operated at…
▽ More
We studied time resolution and response power dependence of three terahertz detectors based on significantly different types of field effect transistors. We analyzed the photoresponse of custom-made Si junctionless FETs, Si MOSFETs and GaAs-based high electron mobility transistors detectors. Applying monochromatic radiation of high power, pulsed, line-tunable molecular THz laser, which operated at frequencies in the range from 0.6-3.3 THz, we demonstrated that all these detectors have at least nanosecond response time. We showed that detectors yield a linear response in a wide range of radiation power. At high powers the response saturates varying with radiation power P as $U = R_0 P/(1+P/P_s)$, where $R_0$ is the low power responsivity, $P_s$ is the saturation power. We demonstrated that the linear part response decreases with radiation frequency increase as $R_0 \propto f^{-3}$, whereas the power at which signal saturates increases as $P_s \propto f^3$. We discussed the observed dependences in the framework of the Dyakonov-Shur mechanism and detector-antenna impedance matching. Our study showed that FET transistors can be used as ultrafast room temperature detectors of THz radiation and that their dynamic range extends over many orders of magnitude of power of incoming THz radiation. Therefore, when embedded with current driven read out electronics they are very well adopted for operation with high power pulsed sources.
△ Less
Submitted 21 May, 2019;
originally announced May 2019.
-
The SAGE Project: a Storage Centric Approach for Exascale Computing
Authors:
Sai Narasimhamurthy,
Nikita Danilov,
Sining Wu,
Ganesan Umanesan,
Steven Wei-der Chien,
Sergio Rivas-Gomez,
Ivy Bo Peng,
Erwin Laure,
Shaun de Witt,
Dirk Pleiter,
Stefano Markidis
Abstract:
SAGE (Percipient StorAGe for Exascale Data Centric Computing) is a European Commission funded project towards the era of Exascale computing. Its goal is to design and implement a Big Data/Extreme Computing (BDEC) capable infrastructure with associated software stack. The SAGE system follows a "storage centric" approach as it is capable of storing and processing large data volumes at the Exascale r…
▽ More
SAGE (Percipient StorAGe for Exascale Data Centric Computing) is a European Commission funded project towards the era of Exascale computing. Its goal is to design and implement a Big Data/Extreme Computing (BDEC) capable infrastructure with associated software stack. The SAGE system follows a "storage centric" approach as it is capable of storing and processing large data volumes at the Exascale regime.
SAGE addresses the convergence of Big Data Analysis and HPC in an era of next-generation data centric computing. This convergence is driven by the proliferation of massive data sources, such as large, dispersed scientific instruments and sensors where data needs to be processed, analyzed and integrated into simulations to derive scientific and innovative insights. A first prototype of the SAGE system has been been implemented and installed at the Julich Supercomputing Center. The SAGE storage system consists of multiple types of storage device technologies in a multi-tier I/O hierarchy, including flash, disk, and non-volatile memory technologies. The main SAGE software component is the Seagate Mero Object Storage that is accessible via the Clovis API and higher level interfaces. The SAGE project also includes scientific applications for the validation of the SAGE concepts.
The objective of this paper is to present the SAGE project concepts, the prototype of the SAGE platform and discuss the software architecture of the SAGE system.
△ Less
Submitted 6 July, 2018;
originally announced July 2018.
-
SAGE: Percipient Storage for Exascale Data Centric Computing
Authors:
Sai Narasimhamurthy,
Nikita Danilov,
Sining Wu,
Ganesan Umanesan,
Stefano Markidis,
Sergio Rivas-Gomez,
Ivy Bo Peng,
Erwin Laure,
Dirk Pleiter,
Shaun de Witt
Abstract:
We aim to implement a Big Data/Extreme Computing (BDEC) capable system infrastructure as we head towards the era of Exascale computing - termed SAGE (Percipient StorAGe for Exascale Data Centric Computing). The SAGE system will be capable of storing and processing immense volumes of data at the Exascale regime, and provide the capability for Exascale class applications to use such a storage infras…
▽ More
We aim to implement a Big Data/Extreme Computing (BDEC) capable system infrastructure as we head towards the era of Exascale computing - termed SAGE (Percipient StorAGe for Exascale Data Centric Computing). The SAGE system will be capable of storing and processing immense volumes of data at the Exascale regime, and provide the capability for Exascale class applications to use such a storage infrastructure. SAGE addresses the increasing overlaps between Big Data Analysis and HPC in an era of next-generation data centric computing that has developed due to the proliferation of massive data sources, such as large, dispersed scientific instruments and sensors, whose data needs to be processed, analyzed and integrated into simulations to derive scientific and innovative insights. Indeed, Exascale I/O, as a problem that has not been sufficiently dealt with for simulation codes, is appropriately addressed by the SAGE platform. The objective of this paper is to discuss the software architecture of the SAGE system and look at early results we have obtained employing some of its key methodologies, as the system continues to evolve.
△ Less
Submitted 1 May, 2018;
originally announced May 2018.
-
Infrared/Terahertz Spectra of the Photogalvanic Effect in (Bi,Sb)Te based Three Dimensional Topological Insulators
Authors:
H. Plank,
J. Pernul,
S. Gebert,
S. N. Danilov,
J. König-Otto,
S. Winnerl,
M. Lanius,
J. Kampmeier,
G. Mussler,
I. Aguilera,
D. Grützmacher,
S. D. Ganichev
Abstract:
We report on the systematic study of infrared/terahertz spectra of photocurrents in (Bi,Sb)Te based three dimensional topological insulators. We demonstrate that in a wide range of frequencies, ranging from fractions up to tens of terahertz, the photocurrent is caused by the linear photogalvanic effect (LPGE) excited in the surface states. The photocurrent spectra reveal that at low frequencies th…
▽ More
We report on the systematic study of infrared/terahertz spectra of photocurrents in (Bi,Sb)Te based three dimensional topological insulators. We demonstrate that in a wide range of frequencies, ranging from fractions up to tens of terahertz, the photocurrent is caused by the linear photogalvanic effect (LPGE) excited in the surface states. The photocurrent spectra reveal that at low frequencies the LPGE emerges due to free carrier Drude-like absorption. The spectra allow to determine the room temperature carrier mobilities in the surface states despite the presents of thermally activate residual impurities in the material bulk. In a number of samples we observed an enhancement of the linear photogalvanic effect at frequencies between 30÷60 THz, which is attributed to the excitation of electrons from helical surface to bulk conduction band states. Under this condition and applying oblique incidence we also observed the circular photogalvanic effect driven by the radiation helicity.
△ Less
Submitted 30 November, 2017;
originally announced November 2017.
-
High-frequency rectification in graphene lateral p-n junctions
Authors:
Yu. B. Vasilyev,
G. Yu. Vasileva,
S. Novikov,
S. A. Tarasenko,
S. N. Danilov,
S. D. Ganichev
Abstract:
We observe a dc electric current in response to terahertz radiation in lateral inter-digitated double-comb graphene p-n junctions. The junctions were fabricated by selective ultraviolet irradiation inducing p-type do** in intrinsic n-type epitaxial monolayer graphene. The photocurrent exhibits a strong polarization dependence and is explained by electric rectification in p-n junctions.
We observe a dc electric current in response to terahertz radiation in lateral inter-digitated double-comb graphene p-n junctions. The junctions were fabricated by selective ultraviolet irradiation inducing p-type do** in intrinsic n-type epitaxial monolayer graphene. The photocurrent exhibits a strong polarization dependence and is explained by electric rectification in p-n junctions.
△ Less
Submitted 10 November, 2017;
originally announced November 2017.
-
Determination of hole g-factor in InAs/InGaAs/InAlAs quantum wells by magneto-photoluminescence studies
Authors:
Ya. V. Terent'ev,
S. N. Danilov,
M. V. Durnev,
J. Loher,
D. Schuh,
D. Bougeard,
S. V. Ivanov,
S. D. Ganichev
Abstract:
Circularly-polarized magneto-photoluminescence (magneto-PL) technique has been applied to investigate Zeeman effect in InAs/InGaAs/InAlAs quantum wells (QWs) in Faraday geometry. Structures with different thickness of the QW barriers have been studied in magnetic field parallel and tilted with respect to the sample normal. Effective electron-hole g-factor has been found by measurement of splitting…
▽ More
Circularly-polarized magneto-photoluminescence (magneto-PL) technique has been applied to investigate Zeeman effect in InAs/InGaAs/InAlAs quantum wells (QWs) in Faraday geometry. Structures with different thickness of the QW barriers have been studied in magnetic field parallel and tilted with respect to the sample normal. Effective electron-hole g-factor has been found by measurement of splitting of polarized magneto-PL lines. Lande factors of electrons have been calculated using the 14-band kp method and g-factor of holes was determined by subtracting the calculated contribution of the electrons from the effective electron-hole g-factor. Anisotropy of the hole g-factor has been studied applying tilted magnetic field.
△ Less
Submitted 11 October, 2016;
originally announced October 2016.
-
Opto-Electronic Characterization of Three Dimensional Topological Insulators
Authors:
Helene Plank,
Sergey N. Danilov,
Vasily V. Bel'kov,
Vadim A. Shalygin,
Jörn Kampmeier,
Martin Lanius,
Gregor Mussler,
Detlev Grützmacher,
Sergey D. Ganichev
Abstract:
We demonstrate that the terahertz/infrared radiation induced photogalvanic effect, which is sensitive to the surface symmetry and scattering details, can be applied to study the high frequency conductivity of the surface states in (Bi1-xSbx)2Te3 based three dimensional (3D) topological insulators (TI). In particular, measuring the polarization dependence of the photogalvanic current and scanning w…
▽ More
We demonstrate that the terahertz/infrared radiation induced photogalvanic effect, which is sensitive to the surface symmetry and scattering details, can be applied to study the high frequency conductivity of the surface states in (Bi1-xSbx)2Te3 based three dimensional (3D) topological insulators (TI). In particular, measuring the polarization dependence of the photogalvanic current and scanning with a micrometre sized beam spot across the sample, provides access to (i) topographical inhomogeneity's in the electronic properties of the surface states and (ii) the local domain orientation. An important advantage of the proposed method is that it can be applied to study TIs at room temperature and even in materials with a high electron density of bulk carriers.
△ Less
Submitted 12 July, 2016;
originally announced July 2016.
-
Circular photon drag effect in bulk tellurium
Authors:
V. A. Shalygin,
M. D. Moldavskaya,
S. N. Danilov,
I. I. Farbshtein,
L. E. Golub
Abstract:
The circular photon drag effect is observed in a bulk semiconductor. The photocurrent caused by a transfer of both translational and angular momenta of light to charge carriers is detected in tellurium in the mid-infrared frequency range. Dependencies of the photocurrent on the light polarization and on the incidence angle agree with the symmetry analysis of the circular photon drag effect. Micros…
▽ More
The circular photon drag effect is observed in a bulk semiconductor. The photocurrent caused by a transfer of both translational and angular momenta of light to charge carriers is detected in tellurium in the mid-infrared frequency range. Dependencies of the photocurrent on the light polarization and on the incidence angle agree with the symmetry analysis of the circular photon drag effect. Microscopic models of the effect are developed for both intra- and inter-subband optical absorption in the valence band of tellurium. The shift contribution to the circular photon drag current is calculated. An observed decrease of the circular photon drag current with increase of the photon energy is explained by the theory for inter-subband optical transitions. Theoretical estimates of the circular photon drag current agree with the experimental data.
△ Less
Submitted 14 October, 2015;
originally announced October 2015.
-
Magnetooptical Study of Zeeman Effect in Mn modulation-doped InAs/InGaAs/InAlAs Quantum Well Structures
Authors:
Ya. V. Terent'ev,
S. N. Danilov,
H. Plank,
J. Loher,
D. Schuh,
D. Bougeard,
D. Weiss,
M. V. Durnev,
S. A. Tarasenko,
I. V. Rozhansky,
S. V. Ivanov,
D. R. Yakovlev,
S. D. Ganichev
Abstract:
We report on a magneto-photoluminescence (PL) study of Mn modulation-doped InAs/InGaAs/InAlAs quantum wells. Two PL lines corresponding to the radiative recombination of photoelectrons with free and bound-on-Mn holes have been observed. In the presence of a magnetic field applied in the Faraday geometry both lines split into two circularly polarized components. While temperature and magnetic field…
▽ More
We report on a magneto-photoluminescence (PL) study of Mn modulation-doped InAs/InGaAs/InAlAs quantum wells. Two PL lines corresponding to the radiative recombination of photoelectrons with free and bound-on-Mn holes have been observed. In the presence of a magnetic field applied in the Faraday geometry both lines split into two circularly polarized components. While temperature and magnetic field dependences of the splitting are well described by the Brillouin function, providing an evidence for exchange interaction with spin polarized manganese ions, the value of the splitting exceeds the expected value of the giant Zeeman splitting by two orders of magnitude for a given Mn density. Possible reasons of this striking observation are discussed.
△ Less
Submitted 21 February, 2015;
originally announced February 2015.
-
Room temperature high frequency transport of Dirac fermions in epitaxially grown Sb_2Te_3 based topological insulators
Authors:
P. Olbrich,
L. E. Golub,
T. Herrmann,
S. N. Danilov,
H. Plank,
V. V. Bel'kov,
G. Mussler,
Ch. Weyrich,
C. M. Schneider,
J. Kampmeier,
D. Grützmacher,
L. Plucinski,
M. Eschbach,
S. D. Ganichev
Abstract:
We report on the observation of photogalvanic effects in epitaxially grown Sb_2Te_3 three-dimensional (3D) topological insulators (TI). We show that asymmetric scattering of Dirac electrons driven back and forth by the terahertz electric field results in a dc electric current. Due to the "symmetry filtration" the dc current is generated in the surface electrons only and provides an opto-electronic…
▽ More
We report on the observation of photogalvanic effects in epitaxially grown Sb_2Te_3 three-dimensional (3D) topological insulators (TI). We show that asymmetric scattering of Dirac electrons driven back and forth by the terahertz electric field results in a dc electric current. Due to the "symmetry filtration" the dc current is generated in the surface electrons only and provides an opto-electronic access to probe the electric transport in TI, surface domains orientation and details of electron scattering even in 3D TI at room temperature where conventional surface electron transport is usually hindered by the high carrier density in the bulk.
△ Less
Submitted 28 February, 2014;
originally announced February 2014.
-
Magneto-Photoluminescence of InAs/InGaAs/InAlAs quantum well structures
Authors:
Ya. V. Terent'ev,
S. N. Danilov,
J. Loher,
D. Schuh,
D. Bougeard,
D. Weiss,
M. V. Durnev,
S. A. Tarasenko,
M. S. Mukhin,
S. V. Ivanov,
S. D. Ganichev
Abstract:
Photoluminescence (PL) and highly circularly-polarized magneto-PL (up to 50% at 6 T) from two-step bandgap InAs/InGaAs/InAlAs quantum wells (QWs) are studied. Bright PL is observed up to room temperature, indicating a high quantum efficiency of the radiative recombination in these QW. The sign of the circular polarization indicates that it stems from the spin polarization of heavy holes caused by…
▽ More
Photoluminescence (PL) and highly circularly-polarized magneto-PL (up to 50% at 6 T) from two-step bandgap InAs/InGaAs/InAlAs quantum wells (QWs) are studied. Bright PL is observed up to room temperature, indicating a high quantum efficiency of the radiative recombination in these QW. The sign of the circular polarization indicates that it stems from the spin polarization of heavy holes caused by the Zeeman effect. Although in magnetic field the PL line are strongly circularly polarized, no energy shift between the counter-polarized PL lines was observed. The results suggest that the electron and the hole g-factor to be of the same sign and close magnitudes.
△ Less
Submitted 30 January, 2014; v1 submitted 29 January, 2014;
originally announced January 2014.
-
Probing of electromagnetic fields on atomic scale by photoelectric phenomena in graphene
Authors:
Peter Olbrich,
Christoph Drexler,
Leonid E. Golub,
Sergey N. Danilov,
Vadim A. Shalygin,
Rositza Yakimova,
Samuel Lara-Avila,
Sergey Kubatkin,
Britta Redlich,
Rupert Huber,
Sergey D. Ganichev
Abstract:
We report on the observation of the reststrahl band assisted photocurrents in epitaxial graphene on SiC excited by infrared radiation. The peculiar spectral dependence for frequencies lying within the reststrahl band of the SiC substrate provides a direct and noninvasive way to probe the electric field magnitude at atomic distances from the material's surface. Furthermore our results reveal that n…
▽ More
We report on the observation of the reststrahl band assisted photocurrents in epitaxial graphene on SiC excited by infrared radiation. The peculiar spectral dependence for frequencies lying within the reststrahl band of the SiC substrate provides a direct and noninvasive way to probe the electric field magnitude at atomic distances from the material's surface. Furthermore our results reveal that nonlinear optical and optoelectronic phenomena in 2D crystals and other atomic scale structures can be giantly enhanced by a proper combination of the spectral range and substrate material.
△ Less
Submitted 1 August, 2013;
originally announced August 2013.
-
Helicity-dependent photocurrents in graphene layers excited by mid-infrared radiation of a CO$_2$-laser
Authors:
Chongyun Jiang,
V. A. Shalygin,
V. Yu. Panevin,
S. N. Danilov,
M. M. Glazov,
R. Yakimova,
S. Lara-Avila,
S. Kubatkin,
S. D. Ganichev
Abstract:
We report the study of the helicity driven photocurrents in graphene excited by mid-infrared light of a CO$_2$-laser. Illuminating an unbiased monolayer sheet of graphene with circularly polarized radiation generates -- under oblique incidence -- an electric current perpendicular to the plane of incidence, whose sign is reversed by switching the radiation helicity. We show that the current is caus…
▽ More
We report the study of the helicity driven photocurrents in graphene excited by mid-infrared light of a CO$_2$-laser. Illuminating an unbiased monolayer sheet of graphene with circularly polarized radiation generates -- under oblique incidence -- an electric current perpendicular to the plane of incidence, whose sign is reversed by switching the radiation helicity. We show that the current is caused by the interplay of the circular $ac$ Hall effect and the circular photogalvanic effect. Studying the frequency dependence of the current in graphene layers grown on the SiC substrate we observe that the current exhibits a resonance at frequencies matching the longitudinal optical phonon in SiC.
△ Less
Submitted 31 May, 2011;
originally announced May 2011.
-
Circular photogalvanic effect in HgTe/CdHgTe quantum well structures
Authors:
B. Wittmann,
S. N. Danilov,
V. V. Bel'kov,
S. A. Tarasenko,
E. G. Novik,
H. Buhmann,
C. Brüne,
L. W. Molenkamp,
Z. D. Kvon,
N. N. Mikhailov,
S. A. Dvoretsky,
N. Q. Vinh,
A. F. G. van der Meer,
B. Murdin,
S. D. Ganichev
Abstract:
We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz (THz) radiation in the QWs structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state an…
▽ More
We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz (THz) radiation in the QWs structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state and crystallographic orientation of the substrate in a simple way that can be understood from a phenomenological theory. The observed dependences of the photocurrent on the radiation wavelength and temperature are discussed.
△ Less
Submitted 12 February, 2010;
originally announced February 2010.
-
Characterization of a Nd-loaded organic liquid scintillator for neutrinoless double beta decay search of 150-Nd with a 10-ton scale detector
Authors:
I. Barabanov,
L. Bezrukov,
C. Cattadori,
N. Danilov,
A. Di Vacri,
A. Ianni,
S. Nisi,
F. Ortica,
A. Romani,
C. Salvo,
O. Smirnov,
E. Yanovich
Abstract:
Several liters of an organic liquid scintillator (LS) loaded with Nd have been made. We report on performances of this scintillator in terms of optical properties, radiopurity and light yield for a Nd concentration of 6.5 g/l. A possible application to search for the 150Nd neutrinoless double beta decay with a 10-ton scale LS detector is discussed together with further improvements.
Several liters of an organic liquid scintillator (LS) loaded with Nd have been made. We report on performances of this scintillator in terms of optical properties, radiopurity and light yield for a Nd concentration of 6.5 g/l. A possible application to search for the 150Nd neutrinoless double beta decay with a 10-ton scale LS detector is discussed together with further improvements.
△ Less
Submitted 11 September, 2009;
originally announced September 2009.
-
Nonlinear magneto-gyrotropic photogalvanic effect
Authors:
H. Diehl,
V. A. Shalygin,
L. E. Golub,
S. A. Tarasenko,
S. N. Danilov,
V. V. Bel'kov,
E. G. Novik,
H. Buhmann,
C. Brüne,
E. L. Ivchenko,
S. D. Ganichev
Abstract:
We report on the observation of nonlinear magneto-gyrotropic photogalvanic effect in HgTe/HgCdTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz radiation in the heterostructures is shown to cause a dc electric current in the presence of an in-plane magnetic field. A cubic in magnetic field component of the photocurrent is obs…
▽ More
We report on the observation of nonlinear magneto-gyrotropic photogalvanic effect in HgTe/HgCdTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz radiation in the heterostructures is shown to cause a dc electric current in the presence of an in-plane magnetic field. A cubic in magnetic field component of the photocurrent is observed in quantum wells with the inverted band structure only. The experimental data are discussed in terms of both the phenomenological theory and microscopic models.
△ Less
Submitted 20 May, 2009;
originally announced May 2009.
-
Fast detector of the ellipticity of infrared and terahertz radiation based on HgTe quantum well structures
Authors:
S. N. Danilov,
B. Wittmann,
P. Olbrich,
W. Eder,
W. Prettl,
L. E. Golub,
E. V. Beregulin,
Z. D. Kvon,
N. N. Mikhailov,
S. A. Dvoretsky,
V. A. Shalygin,
N. Q. Vinh,
A. F. G. van der Meer,
B. Murdin,
S. D. Ganichev
Abstract:
We report a fast, room temperature detection scheme for the polarization ellipticity of laser radiation, with a bandwidth that stretches from the infrared to the terahertz range. The device consists of two elements, one in front of the other, that detect the polarization ellipticity and the azimuthal angle of the ellipse. The elements respectively utilise the circular photogalvanic effect in a n…
▽ More
We report a fast, room temperature detection scheme for the polarization ellipticity of laser radiation, with a bandwidth that stretches from the infrared to the terahertz range. The device consists of two elements, one in front of the other, that detect the polarization ellipticity and the azimuthal angle of the ellipse. The elements respectively utilise the circular photogalvanic effect in a narrow gap semiconductor and the linear photogalvanic effect in a bulk piezoelectric semiconductor. For the former we characterized both a HgTe quantum well and bulk Te, and for the latter, bulk GaAs. In contrast with optical methods our device is an easy to handle all-electric approach, which we demonstrated by applying a large number of different lasers from low power, continuous wave systems to high power, pulsed sources.
△ Less
Submitted 7 October, 2008;
originally announced October 2008.
-
Resonant circular photogalvanic effect in GaN/AlGaN heterojunctions
Authors:
B. Wittmann,
L. E. Golub,
S. N. Danilov,
J. Karch,
C. Reitmaier,
Z. D. Kvon,
N. Q. Vinh,
A. F. G. van der Meer,
B. Murdin,
S. D. Ganichev
Abstract:
The resonant circular photogalvanic effect is observed in wurtzite (0001)-oriented GaN low-dimensional structures excited by infrared radiation. The current is induced by angular momentum transfer of photons to the photoexcited electrons at resonant inter-subband optical transitions in a GaN/AlGaN heterojunction. The signal reverses upon the reversal of the radiation helicity or, at fixed helici…
▽ More
The resonant circular photogalvanic effect is observed in wurtzite (0001)-oriented GaN low-dimensional structures excited by infrared radiation. The current is induced by angular momentum transfer of photons to the photoexcited electrons at resonant inter-subband optical transitions in a GaN/AlGaN heterojunction. The signal reverses upon the reversal of the radiation helicity or, at fixed helicity, when the propagation direction of the photons is reversed. Making use of the tunability of the free-electron laser FELIX we demonstrate that the current direction changes by swee** the photon energy through the intersubband resonance condition, in agreement with theoretical considerations.
△ Less
Submitted 16 September, 2008;
originally announced September 2008.
-
Quantum ratchet effects induced by terahertz radiation in GaN-based two-dimensional structures
Authors:
W. Weber,
L. E. Golub,
S. N. Danilov,
J. Karch,
C. Reitmaier,
B. Wittmann,
V. V. Bel'kov,
E. L. Ivchenko,
Z. D. Kvon,
N. Q. Vinh,
A. F. G. van der Meer,
B. Murdin,
S. D. Ganichev
Abstract:
Photogalvanic effects are observed and investigated in wurtzite (0001)-oriented GaN/AlGaN low-dimensional structures excited by terahertz radiation. The structures are shown to represent linear quantum ratchets. Experimental and theoretical analysis exhibits that the observed photocurrents are related to the lack of an inversion center in the GaN-based heterojunctions.
Photogalvanic effects are observed and investigated in wurtzite (0001)-oriented GaN/AlGaN low-dimensional structures excited by terahertz radiation. The structures are shown to represent linear quantum ratchets. Experimental and theoretical analysis exhibits that the observed photocurrents are related to the lack of an inversion center in the GaN-based heterojunctions.
△ Less
Submitted 7 May, 2008; v1 submitted 2 April, 2008;
originally announced April 2008.
-
Performances and stability of a 2.4 ton Gd organic liquid scintillator target for antineutrino detection
Authors:
I. R. Barabanov,
L. B. Bezrukov,
C. Cattadori,
N. A. Danilov,
A. Di Vacri,
Yu. S. Krilov,
L. Ioannucci,
E. A. Yanovich,
M. Aglietta,
A. Bonardi,
G. Bruno,
W. Fulgione,
E. Kemp,
A. S. Malguin,
A. Porta,
M. Selvi
Abstract:
In this work we report the performances and the chemical and physical properties of a (2 x 1.2) ton organic liquid scintillator target doped with Gd up to ~0.1%, and the results of a 2 year long stability survey. In particular we have monitored the amount of both Gd and primary fluor actually in solution, the optical and fluorescent properties of the Gd-doped liquid scintillator (GdLS) and its p…
▽ More
In this work we report the performances and the chemical and physical properties of a (2 x 1.2) ton organic liquid scintillator target doped with Gd up to ~0.1%, and the results of a 2 year long stability survey. In particular we have monitored the amount of both Gd and primary fluor actually in solution, the optical and fluorescent properties of the Gd-doped liquid scintillator (GdLS) and its performances as a neutron detector, namely neutron capture efficiency and average capture time. The experimental survey is ongoing, the target being continuously monitored. After two years from the do** time the performances of the Gd-doped liquid scintillator do not show any hint of degradation and instability; this conclusion comes both from the laboratory measurements and from the "in-tank" measurements. This is the largest stable Gd-doped organic liquid scintillator target ever produced and continuously operated for a long period.
△ Less
Submitted 11 March, 2008;
originally announced March 2008.
-
Characterization and performances of new indium loaded organic liquid scintillators, based on novel indium carboxilate compounds
Authors:
I. Barabanov,
L. Bezrukov,
C. Cattadori,
N. Danilov,
A. Di Vacri,
N. Ferrari,
V. Kornoukhov,
Y. S. Krylov,
N. Nesterova,
S. Nisi,
E. Yanovich
Abstract:
A novel formulation to dope organic liquid scintillators (OLS) with indium at concentrations up to 10% is presented: it is based on specific indium carboxylate compounds adequately synthesized. The produced In-OLS has been characterized: it has light yield 8500 ph/MeV at indium concentration 5.5% and light attenuation length of 2,5 m at wavelength of 430 nm. The scintillator properties were stab…
▽ More
A novel formulation to dope organic liquid scintillators (OLS) with indium at concentrations up to 10% is presented: it is based on specific indium carboxylate compounds adequately synthesized. The produced In-OLS has been characterized: it has light yield 8500 ph/MeV at indium concentration 5.5% and light attenuation length of 2,5 m at wavelength of 430 nm. The scintillator properties were stable during all time of investigation (~ 1 years). The produced In-OLS is compared to other In-OLS formulations and shows superior performances. The developed methodic to metal dope OLS can be easily extended to other metals as Gd, Nd, Cd.
△ Less
Submitted 12 November, 2007;
originally announced November 2007.
-
All-electric detectors of the polarization state of terahertz laser radiation (extended version)
Authors:
S. D. Ganichev,
W. Weber,
J. Kiermaier,
S. N. Danilov,
D. Schuh,
W. Wegscheider,
Ch. Gerl,
W. Prettl,
D. Bougeard,
G. Abstreiter
Abstract:
Two types of room temperature detectors of terahertz laser radiation have been developed which allow in an all-electric manner to determine the plane of polarization of linearly polarized radiation and the ellipticity of elliptically polarized radiation, respectively. The operation of the detectors is based on photogalvanic effects in semiconductor quantum well structures of low symmetry. The ph…
▽ More
Two types of room temperature detectors of terahertz laser radiation have been developed which allow in an all-electric manner to determine the plane of polarization of linearly polarized radiation and the ellipticity of elliptically polarized radiation, respectively. The operation of the detectors is based on photogalvanic effects in semiconductor quantum well structures of low symmetry. The photogalvanic effects have sub-nanosecond time constants at room temperature making a high time resolution of the polarization detectors possible.
△ Less
Submitted 6 May, 2008; v1 submitted 28 September, 2007;
originally announced September 2007.
-
Magneto-gyrotropic photogalvanic effects in GaN/AlGaN two-dimensional systems
Authors:
W. Weber,
S. Seidl,
S. N. Danilov,
W. Prettl,
V. V. Bel'kov,
L. E. Golub,
E. L. Ivchenko,
Z. D. Kvon,
Hyun-Ick Cho,
Jung-Hee Lee,
S. D. Ganichev
Abstract:
The magneto-gyrotropic photogalvanic and spin-galvanic effects are observed in (0001)-oriented GaN/AlGaN heterojunctions excited by terahertz radiation. We show that free-carrier absorption of linearly or circularly polarized terahertz radiation in low-dimensional structures causes an electric photocurrent in the presence of an in-plane magnetic field. Microscopic mechanisms of these photocurren…
▽ More
The magneto-gyrotropic photogalvanic and spin-galvanic effects are observed in (0001)-oriented GaN/AlGaN heterojunctions excited by terahertz radiation. We show that free-carrier absorption of linearly or circularly polarized terahertz radiation in low-dimensional structures causes an electric photocurrent in the presence of an in-plane magnetic field. Microscopic mechanisms of these photocurrents based on spin-related phenomena are discussed. Properties of the magneto-gyrotropic and spin-galvanic effects specific for hexagonal heterostructures are analyzed.
△ Less
Submitted 27 September, 2007;
originally announced September 2007.
-
Cyclotron resonance photoconductivity of a two-dimensional electron gas in HgTe quantum wells
Authors:
Ze-Don Kvon,
Sergey N. Danilov,
Nikolay N. Mikhailov,
Sergey A. Dvoretsky,
Wilhelm Prettl,
Sergey D. Ganichev
Abstract:
Far-infrared cyclotron resonance photoconductivity (CRP) is investigated in HgTe quantum wells (QWs) of various widths grown on (013) oriented GaAs substrates. It is shown that CRP is caused by the heating of two-dimensional electron gas (2DEG). From the resonance magnetic field strength effective masses and their dependence on the carrier concentration is obtained. We found that the effective m…
▽ More
Far-infrared cyclotron resonance photoconductivity (CRP) is investigated in HgTe quantum wells (QWs) of various widths grown on (013) oriented GaAs substrates. It is shown that CRP is caused by the heating of two-dimensional electron gas (2DEG). From the resonance magnetic field strength effective masses and their dependence on the carrier concentration is obtained. We found that the effective mass in each sample slightly increases from the value (0.0260 \pm 0.0005)m_0 at N_s = 2.2x10^11 cm^(-2) to (0.0335 \pm 0.0005)m_0 at N_s = 9.6x10^11 cm^(-2). Compared to determination of effective masses by the temperature dependence of magnitudes of the Shubnikov-de Haas (SdH) oscillations used so far in this material our measurements demonstrate that the CRP provides a more accurate (about few percents) tool. Combining optical methods with transport measurements we found that the transport time substantially exceeds the cyclotron resonance lifetime as well as the quantum lifetime which is the shortest.
△ Less
Submitted 16 August, 2007;
originally announced August 2007.
-
Photogalvanic effects in HgTe quantum wells
Authors:
B. Wittmann,
R. Ravash,
H. Diehl,
S. N. Danilov,
Z. D. Kvon,
S. A. Tarasenko,
E. L. Ivchenko,
N. N. Mikhailov,
S. A. Dvoretsky,
W. Prettl,
S. D. Ganichev
Abstract:
We report on the observation of the terahertz radiation induced circular (CPGE) and linear (LPGE) photogalvanic effects in HgTe quantum wells. The current response is well described by the phenomenological theory of CPGE and LPGE.
We report on the observation of the terahertz radiation induced circular (CPGE) and linear (LPGE) photogalvanic effects in HgTe quantum wells. The current response is well described by the phenomenological theory of CPGE and LPGE.
△ Less
Submitted 16 August, 2007;
originally announced August 2007.
-
Magneto-gyrotropic photogalvanic effects due to inter-subband absorption in quantum wells
Authors:
H. Diehl,
V. A. Shalygin,
S. N. Danilov,
S. A. Tarasenko,
V. V. Bel'kov,
D. Schuh,
W. Wegscheider,
W. Prettl,
S. D. Ganichev
Abstract:
We report on the observation of the magneto-photogalvanic effect (MPGE) due to inter-subband transitions in (001)-oriented GaAs quantum wells. This effect is related to the gyrotropic properties of the structures. It is shown that inter-subband absorption of linearly polarized radiation may lead to spin-related as well as spin independent photocurrents if an external magnetic field is applied in…
▽ More
We report on the observation of the magneto-photogalvanic effect (MPGE) due to inter-subband transitions in (001)-oriented GaAs quantum wells. This effect is related to the gyrotropic properties of the structures. It is shown that inter-subband absorption of linearly polarized radiation may lead to spin-related as well as spin independent photocurrents if an external magnetic field is applied in the plane of the quantum well. The experimental results are analyzed in terms of the phenomenological theory and microscopic models of MPGE based on either asymmetric optical excitation or asymmetric relaxation of carriers in k-space. We observed resonant photocurrents not only at oblique incidence of radiation but also at normal incidence demonstrating that conventionally applied selection rules for the inter-subband optical transitions are not rigorous.
△ Less
Submitted 1 August, 2007;
originally announced August 2007.
-
Subnanosecond Ellipticity Detector for Laser Radiation (second version, extended)
Authors:
S. D. Ganichev,
W. Weber,
J. Kiermaier,
S. N. Danilov,
P. Olbrich,
D. Schuh,
W. Wegscheider,
D. Bougeard,
G. Abstreiter,
W. Prettl
Abstract:
Two types of room temperature detectors of terahertz laser radiation have been developed which allow in an all-electric manner to determine the plane of polarization of linearly polarized radiation and the Stokes parameters of elliptically polarized radiation, respectively. The operation of the detectors is based on photogalvanic effects in semiconductor quantum well structures of low symmetry.…
▽ More
Two types of room temperature detectors of terahertz laser radiation have been developed which allow in an all-electric manner to determine the plane of polarization of linearly polarized radiation and the Stokes parameters of elliptically polarized radiation, respectively. The operation of the detectors is based on photogalvanic effects in semiconductor quantum well structures of low symmetry. The photogalvanic effects have nanoseconds time constants at room temperature making a high time resolution of the polarization detectors possible.
△ Less
Submitted 18 March, 2008; v1 submitted 31 July, 2007;
originally announced July 2007.
-
Pure spin currents induced by spin-dependent scattering processes in SiGe quantum well structures
Authors:
S. D. Ganichev,
S. N. Danilov,
V. V. Bel'kov,
S. Giglberger,
S. A. Tarasenko,
E. L. Ivchenko,
D. Weiss,
W. Jantsch,
F. Schaeffler,
D. Gruber,
W. Prettl
Abstract:
We show that spin-dependent electron-phonon interaction in the energy relaxation of a two-dimensional electron gas results in equal and oppositely directed currents in the spin-up and spin-down subbands yielding a pure spin current. In our experiments on SiGe heterostructures the pure spin current is converted into an electric current applying a magnetic field that lifts the cancellation of the…
▽ More
We show that spin-dependent electron-phonon interaction in the energy relaxation of a two-dimensional electron gas results in equal and oppositely directed currents in the spin-up and spin-down subbands yielding a pure spin current. In our experiments on SiGe heterostructures the pure spin current is converted into an electric current applying a magnetic field that lifts the cancellation of the two partial charge flows. A microscopic theory of this effect, taking account of the asymmetry of the relaxation process, is developed being in a good agreement with the experimental data.
△ Less
Submitted 26 October, 2006;
originally announced October 2006.
-
Spin photocurrents and circular photon drag effect in (110)-grown quantum well structures
Authors:
V. A. Shalygin,
H. Diehl,
Ch. Hoffmann,
S. N. Danilov,
T. Herrle,
S. A. Tarasenko,
D. Schuh,
Ch. Gerl,
W. Wegscheider,
W. Prettl,
S. D. Ganichev
Abstract:
We report on the study of spin photocurrents in (110)-grown quantum well structures. Investigated effects comprise the circular photogalvanic effect and so far not observed circular photon drag effect. The experimental data can be described by an analytical expression derived from a phenomenological theory. A microscopic model of the circular photon drag effect is developed demonstrating that th…
▽ More
We report on the study of spin photocurrents in (110)-grown quantum well structures. Investigated effects comprise the circular photogalvanic effect and so far not observed circular photon drag effect. The experimental data can be described by an analytical expression derived from a phenomenological theory. A microscopic model of the circular photon drag effect is developed demonstrating that the generated current has spin dependent origin.
△ Less
Submitted 20 October, 2006;
originally announced October 2006.
-
Rashba and Dresselhaus Spin-Splittings in Semiconductor Quantum Wells Measured by Spin Photocurrents
Authors:
S. Giglberger,
L. E. Golub,
V. V. Bel'kov,
S. N. Danilov,
D. Schuh,
Ch. Gerl,
F. Rohlfing,
J. Stahl,
W. Wegscheider,
D. Weiss,
W. Prettl,
S. D. Ganichev
Abstract:
The spin-galvanic effect and the circular photogalvanic effect induced by terahertz radiation are applied to determine the relative strengths of Rashba and Dresselhaus band spin-splitting in (001)-grown GaAs and InAs based two dimensional electron systems. We observed that shifting the $δ$-do** plane from one side of the quantum well to the other results in a change of sign of the photocurrent…
▽ More
The spin-galvanic effect and the circular photogalvanic effect induced by terahertz radiation are applied to determine the relative strengths of Rashba and Dresselhaus band spin-splitting in (001)-grown GaAs and InAs based two dimensional electron systems. We observed that shifting the $δ$-do** plane from one side of the quantum well to the other results in a change of sign of the photocurrent caused by Rashba spin-splitting while the sign of the Dresselhaus term induced photocurrent remains. The measurements give the necessary feedback for technologists looking for structures with equal Rashba and Dresselhaus spin-splittings or perfectly symmetric structures with zero Rashba constant.
△ Less
Submitted 2 October, 2006; v1 submitted 22 September, 2006;
originally announced September 2006.
-
Zero-bias spin separation
Authors:
Sergey D. Ganichev,
Vasily V. Bel'kov,
Sergey A. Tarasenko,
Sergey N. Danilov,
Stephan Giglberger,
Christoph Hoffmann,
Eougenious L. Ivchenko,
Dieter Weiss,
Werner Wegscheider,
Christian Gerl,
Dieter Schuh,
Joachim Stahl,
Joan De Boeck,
Gustaaf Borghs,
Wilhelm Prettl
Abstract:
Spin-orbit coupling provides a versatile tool to generate and to manipulate the spin degree of freedom in low-dimensional semiconductor structures. The spin Hall effect, where an electrical current drives a transverse spin current and causes a nonequilibrium spin accumulation observed near the sample boundary, the spin-galvanic effect, where a nonequilibrium spin polarization drives an electric…
▽ More
Spin-orbit coupling provides a versatile tool to generate and to manipulate the spin degree of freedom in low-dimensional semiconductor structures. The spin Hall effect, where an electrical current drives a transverse spin current and causes a nonequilibrium spin accumulation observed near the sample boundary, the spin-galvanic effect, where a nonequilibrium spin polarization drives an electric current, or the reverse process, in which an electrical current generates a nonequilibrium spin polarization, are all consequences of spin-orbit coupling. In order to observe a spin Hall effect a bias driven current is an essential prerequisite. The spin separation is caused via spin-orbit coupling either by Mott scattering (extrinsic spin Hall effect) or by Rashba or Dresselhaus spin splitting of the band structure (intrinsic spin Hall effect). Here we provide evidence for an elementary effect causing spin separation which is fundamentally different from that of the spin Hall effect. In contrast to the spin Hall effect it does not require an electric current to flow: It is spin separation achieved by spin-dependent scattering of electrons in media with suitable symmetry. We show that by free carrier (Drude) absorption of terahertz radiation spin separation is achieved in a wide range of temperatures from liquid helium up to room temperature. Moreover the experimental results give evidence that simple electron gas heating by any means is already sufficient to yield spin separation due to spin-dependent energy relaxation processes of nonequilibrium carriers.
△ Less
Submitted 24 May, 2006; v1 submitted 23 May, 2006;
originally announced May 2006.
-
Demonstration of Rashba spin splitting in GaN-based heterostructures
Authors:
W. Weber,
S. D. Ganichev,
Z. D. Kvon,
V. V. Bel'kov,
L. E. Golub,
S. N. Danilov,
D. Weiss,
W. Prettl,
Hyun-Ick Cho,
Jung-Hee Lee
Abstract:
The circular photogalvanic effect (CPGE), induced by infrared radiation, has been observed in (0001)-oriented GaN quantum well (QW) structures. The photocurrent changes sign upon reversing the radiation helicity demonstrating the existence of spin-splitting of the conduction band in k-space in this type of materials. The observation suggests the presence of a sizeable Rashba type of spin-splitti…
▽ More
The circular photogalvanic effect (CPGE), induced by infrared radiation, has been observed in (0001)-oriented GaN quantum well (QW) structures. The photocurrent changes sign upon reversing the radiation helicity demonstrating the existence of spin-splitting of the conduction band in k-space in this type of materials. The observation suggests the presence of a sizeable Rashba type of spin-splitting, caused by the built-in asymmetry at the AlGaN/GaN interface.
△ Less
Submitted 8 September, 2005;
originally announced September 2005.
-
Magneto-Gyrotropic Photogalvanic Effects in Semiconductor Quantum Wells
Authors:
V. V. Bel'kov,
S. D. Ganichev,
E. L. Ivchenko,
S. A. Tarasenko,
W. Weber,
S. Giglberger,
M. Olteanu,
H. -P. Tranitz,
S. N. Danilov,
Petra Schneider,
W. Wegscheider,
D. Weiss,
W. Prettl
Abstract:
We show that free-carrier (Drude) absorption of both polarized and unpolarized terahertz radiation in quantum well (QW) structures causes an electric photocurrent in the presence of an in-plane magnetic field. Experimental and theoretical analysis evidences that the observed photocurrents are spin-dependent and related to the gyrotropy of the QWs. Microscopic models for the photogalvanic effects…
▽ More
We show that free-carrier (Drude) absorption of both polarized and unpolarized terahertz radiation in quantum well (QW) structures causes an electric photocurrent in the presence of an in-plane magnetic field. Experimental and theoretical analysis evidences that the observed photocurrents are spin-dependent and related to the gyrotropy of the QWs. Microscopic models for the photogalvanic effects in QWs based on asymmetry of photoexcitation and relaxation processes are proposed. In most of the investigated structures the observed magneto-induced photocurrents are caused by spin-dependent relaxation of non-equilibrium carriers.
△ Less
Submitted 8 February, 2005;
originally announced February 2005.
-
Letter of Intent for Double-CHOOZ: a Search for the Mixing Angle Theta13
Authors:
F. Ardellier,
I. Barabanov,
J. C. Barriere,
M. Bauer,
L. Bezrukov,
C. Buck,
C. Cattadori,
B. Courty,
M. Cribier,
F. Dalnoki-Veress,
N. Danilov,
H. de Kerret,
A. Di Vacri,
A. Etenko,
M. Fallot,
Ch. Grieb,
M. Goeger,
A. Guertin,
T. Kirchner,
Y. S. Krylov,
D. Kryn,
C. Hagner,
W. Hampel,
F. X. Hartmann,
P. Huber
, et al. (27 additional authors not shown)
Abstract:
Tremendous progress has been achieved in neutrino oscillation physics during the last few years. However, the smallness of the $\t13$ neutrino mixing angle still remains enigmatic. The current best constraint comes from the CHOOZ reactor neutrino experiment $\s2t13 < 0.2$ (at 90% C.L., for $\adm2=2.0 10^{-3} \text{eV}^2$). We propose a new experiment on the same site, Double-CHOOZ, to explore th…
▽ More
Tremendous progress has been achieved in neutrino oscillation physics during the last few years. However, the smallness of the $\t13$ neutrino mixing angle still remains enigmatic. The current best constraint comes from the CHOOZ reactor neutrino experiment $\s2t13 < 0.2$ (at 90% C.L., for $\adm2=2.0 10^{-3} \text{eV}^2$). We propose a new experiment on the same site, Double-CHOOZ, to explore the range of $\s2t13$ from 0.2 to 0.03, within three years of data taking. The improvement of the CHOOZ result requires an increase in the statistics, a reduction of the systematic error below one percent, and a careful control of the cosmic ray induced background. Therefore, Double-CHOOZ will use two identical detectors, one at $\sim$150 m and another at 1.05 km distance from the nuclear cores. The plan is to start data taking with two detectors in 2008, and to reach a sensitivity of 0.05 in 2009, and 0.03 in 2011.
△ Less
Submitted 14 May, 2004;
originally announced May 2004.
-
Can an electric current orient spins in quantum wells?
Authors:
S. D. Ganichev,
S. N. Danilov,
Petra Schneider,
V. V. Bel'kov,
L. E. Golub,
W. Wegscheider,
D. Weiss,
W. Prettl
Abstract:
A longstanding theoretical prediction is the orientation of spins by an electrical current flowing through low-dimensional carrier systems of sufficiently low crystallographic symmetry. Here we show by means of terahertz transmission experiments through two-dimensional hole systems a growing spin orientation with an increasing current at room temperature.
A longstanding theoretical prediction is the orientation of spins by an electrical current flowing through low-dimensional carrier systems of sufficiently low crystallographic symmetry. Here we show by means of terahertz transmission experiments through two-dimensional hole systems a growing spin orientation with an increasing current at room temperature.
△ Less
Submitted 25 March, 2004;
originally announced March 2004.
-
Spin relaxation times of 2D holes from spin sensitive bleaching of inter-subband absorption
Authors:
Petra Schneider,
J. Kainz,
S. D. Ganichev,
V. V. Bel'kov,
S. N. Danilov,
M. M. Glazov,
L. E. Golub,
U. Roessler,
W. Wegscheider,
D. Weiss,
D. Schuh,
W. Prettl
Abstract:
We present spin relaxation times of 2D holes obtained by means of spin sensitive bleaching of the absorption of infrared radiation in p-type GaAs/AlGaAs quantum wells (QWs). It is shown that the saturation of inter-subband absorption of circularly polarized radiation is mainly controlled by the spin relaxation time of the holes. The saturation behavior has been determined for different QW widths…
▽ More
We present spin relaxation times of 2D holes obtained by means of spin sensitive bleaching of the absorption of infrared radiation in p-type GaAs/AlGaAs quantum wells (QWs). It is shown that the saturation of inter-subband absorption of circularly polarized radiation is mainly controlled by the spin relaxation time of the holes. The saturation behavior has been determined for different QW widths and in a wide temperature range with the result that the saturation intensity substantially decreases with narrowing of the QWs. Spin relaxation times are derived from the measured saturation intensities by making use of calculated (linear) absorption coefficients for direct inter-subband transitions. It is shown that spin relaxation is due to the D'yakonov-Perel' mechanism governed by hole-hole scattering. The problem of selection rules is addressed.
△ Less
Submitted 24 February, 2004;
originally announced February 2004.
-
Magnetic field effect on tunnel ionization of deep impurities by terahertz radiation
Authors:
S. D. Ganichev,
S. N. Danilov,
M. Sollinger,
J. Zimmermann,
A. S. Moskalenko,
V. I. Perel,
I. N. Yassievich,
C. Back,
W. Prettl
Abstract:
A suppression of tunnelling ionization of deep impurities in terahertz frequency electric fields by a magnetic field is observed. It is shown that the ionization probability at external magnetic field, B, oriented perpendicular to the electric field of terahertz radiation, E, is substantially smaller than that at B || E. The effect occurs at low temperatures and high magnetic fields.
A suppression of tunnelling ionization of deep impurities in terahertz frequency electric fields by a magnetic field is observed. It is shown that the ionization probability at external magnetic field, B, oriented perpendicular to the electric field of terahertz radiation, E, is substantially smaller than that at B || E. The effect occurs at low temperatures and high magnetic fields.
△ Less
Submitted 19 August, 2003;
originally announced August 2003.
-
Spin sensitive bleaching and monopolar spin orientation in quantum wells
Authors:
S. D. Ganichev,
S. N. Danilov,
V. V. Bel'kov,
E. L. Ivchenko,
M. Bichler,
W. Wegscheider,
D. Weiss,
W. Prettl
Abstract:
Spin sensitive bleaching of the absorption of far-infrared radiation has been observed in $p$-type GaAs/AlGaAs quantum well structures. The absorption of circularly polarized radiation saturates at lower intensities than that of linearly polarized light due to monopolar spin orientation in the first heavy hole subband. Spin relaxation times of holes in $p$-type material in the range of tens of p…
▽ More
Spin sensitive bleaching of the absorption of far-infrared radiation has been observed in $p$-type GaAs/AlGaAs quantum well structures. The absorption of circularly polarized radiation saturates at lower intensities than that of linearly polarized light due to monopolar spin orientation in the first heavy hole subband. Spin relaxation times of holes in $p$-type material in the range of tens of ps were derived from the intensity dependence of the absorption.
△ Less
Submitted 27 July, 2001; v1 submitted 23 July, 2001;
originally announced July 2001.
-
Rare-earth loaded liquid scintillator (for LENS experiment)
Authors:
I. R. Barabanov,
V. I. Beresnev,
V. N. Kornoukhov,
E. A. Yanovich,
G. T. Zatsepin,
N. A. Danilov,
G. V. Korpusov,
G. V. Kostikova,
Y. S. Krylov,
V. V. Yakshin
Abstract:
Rare-earth (Yb/Gd) complexes with neutral organophosphorus ligands are briefly discussed for their application in liquid scintillation technique. To evaluate the principle feasibility of a high rare-earth loaded scintillator, the ytterbium chloride complexes with tri-isoamylphosphine oxides were synthesized. Relative scintillation efficiency (RSE) for two Yb concentrations (78 and 88 g/L) was me…
▽ More
Rare-earth (Yb/Gd) complexes with neutral organophosphorus ligands are briefly discussed for their application in liquid scintillation technique. To evaluate the principle feasibility of a high rare-earth loaded scintillator, the ytterbium chloride complexes with tri-isoamylphosphine oxides were synthesized. Relative scintillation efficiency (RSE) for two Yb concentrations (78 and 88 g/L) was measured by means of the internal conversion electron exitation from Cs-137. The results obtained were 50 and 40% respectively.
△ Less
Submitted 11 August, 1999; v1 submitted 4 August, 1999;
originally announced August 1999.