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Vector beam generation from standing hollow GaN nanowire lasers on sapphire substrate
Authors:
Masato Takiguchi,
Sylvain Sergent,
Benjamin Damilano,
Stephane Vezian,
Sebastien Chenot,
Nicole Yazigi,
Peter Heidt,
Tai Tsuchizawa,
Taiki Yoda,
Hisashi Sumikura,
Akihiko Shinya,
Masaya Notomi
Abstract:
We fabricated GaN based hollow nanowires standing upright on a sapphire substrate by the sublimation method and found that they exhibit laser oscillation at room temperature. These very long, hollow, nano-sized structures cannot be fabricated by other means. Furthermore, we determined the condition under which the fundamental mode is azimuthally polarized by investigating the dispersion of the hol…
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We fabricated GaN based hollow nanowires standing upright on a sapphire substrate by the sublimation method and found that they exhibit laser oscillation at room temperature. These very long, hollow, nano-sized structures cannot be fabricated by other means. Furthermore, we determined the condition under which the fundamental mode is azimuthally polarized by investigating the dispersion of the hollow structure. Examination of the measured emission properties indicates that the hollow nanowire operates as a topological, vector-beam, light source.
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Submitted 14 November, 2023;
originally announced November 2023.
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Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: influence on indirect exciton diffusion
Authors:
Benjamin Damilano,
Rémi Aristégui,
Henryk Teisseyre,
Stéphane Vézian,
Vincent Guigoz,
Aimeric Courville,
Ileana Florea,
Philippe Vennéguès,
Michal Bockowski,
Thierry Guillet,
Maria Vladimirova
Abstract:
GaN/AlxGa1-xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The quantum well thickness was set in the 6-8 nm range to favor the photoluminescence emission of indirect excitons. Indeed, such excitons are known to be spatially indirect, due to the presence of the internal electric field which spatially separates the electron and hole wave functions. T…
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GaN/AlxGa1-xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The quantum well thickness was set in the 6-8 nm range to favor the photoluminescence emission of indirect excitons. Indeed, such excitons are known to be spatially indirect, due to the presence of the internal electric field which spatially separates the electron and hole wave functions. The growth conditions were optimized in view of minimizing the photoluminescence peak broadening. In particular, the impact of growth temperature (up to 900°C) on the surface morphology, structural and photoluminescence properties was studied. The diffusion of indirect excitons on the scale of tens of microns was measured with a micro-photoluminescence setup equipped with a spatially resolved detection. A dedicated model and its analysis allow us to extract from these measurements the exciton diffusion constant and to conclude on the optimum growth conditions for the GaN/AlxGa1-xN quantum well structures suited for studies of quantum collective effects in indirect exciton liquids.
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Submitted 20 October, 2023;
originally announced October 2023.
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Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layered graphene and nickel/gold films
Authors:
R. Aristegui,
P. Lefebvre,
C. Brimont,
T. Guillet,
M. Vladimirova,
I. Paradisanos,
C. Robert,
X. Marie,
B. Urbaszek,
S. Chenot,
Y. Cordier,
B. Damilano
Abstract:
Excitons hosted by GaN/(Al,Ga)N quantum wells (QWs) are spatially indirect due to the giant built-in electric field that separates electrons and holes along the growth direction. This electric field, and thus exciton energy, can be reduced by depositing metallic layers on the sample surface. Using spatially-resolved micro-photoluminescence spectroscopy we compare the effects of two different mater…
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Excitons hosted by GaN/(Al,Ga)N quantum wells (QWs) are spatially indirect due to the giant built-in electric field that separates electrons and holes along the growth direction. This electric field, and thus exciton energy, can be reduced by depositing metallic layers on the sample surface. Using spatially-resolved micro-photoluminescence spectroscopy we compare the effects of two different materials, Nickel/Gold (NiAu) and few-layered graphene (FLG), on the potential landscape experienced by the excitons. We are able to (i) determine the potential barriers imposed on QW excitons by deposition of FLG and NiAu to be $14$ and $82$~meV, respectively, and (ii) to evidence their impact on the exciton transport at appropriate densities. Optical losses and inhomogeneous broadening induced by deposition of NiAu and FLG layers are similar, and their joined implementation constitute a promising tool for electrostatic modulation of IX densities even in the absence of any applied electric bias.
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Submitted 7 June, 2023;
originally announced June 2023.
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Electrical control of excitons in GaN/(Al,Ga)N quantum wells
Authors:
R. Aristegui,
F. Chiaruttini,
B. Jouault,
P. Lefebvre,
C. Brimont,
T. Guillet,
M. Vladimirova,
S. Chenot,
Y. Cordier,
B. Damilano
Abstract:
A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant densities of indirect excitons can accumulate in electrostatic traps imprinted in the quantum well plane by a thin metal layer deposited on top of the heterostructure. By jointly measuring spatially-resolved photolumines…
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A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant densities of indirect excitons can accumulate in electrostatic traps imprinted in the quantum well plane by a thin metal layer deposited on top of the heterostructure. By jointly measuring spatially-resolved photoluminescence and photo-induced current, we demonstrate that exciton density in the trap can be controlled via an external electric bias, which is capable of altering the trap depth. Application of a negative bias deepens the trap** potential, but does not lead to any additional accumulation of excitons in the trap. This is due to exciton dissociation instigated by the lateral electric field at the electrode edges. The resulting carrier losses are detected as an increased photo-current and reduced photoluminescence intensity. By contrast, application of a positive bias washes out the electrode-induced trap** potential. Thus, excitons get released from the trap and recover free propagation in the plane that we reveal by spatially-resolved photoluminescence.
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Submitted 25 March, 2022;
originally announced March 2022.
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Revealing topological phase in Pancharatnam-Berry metasurfaces using mesoscopic electrodynamics
Authors:
Zhanjie Gao,
Sandeep Golla,
Rajath Sawant,
Vladimir Osipov,
Gauthier Briere,
Stephane Vezian,
Benjamin Damilano,
Patrice Genevet,
Konstantin E. Dorfman
Abstract:
Relying on the local orientation of nanostructures, Pancharatnam-Berry metasurfaces are currently enabling a new generation of polarization-sensitive optical devices. A systematical mesoscopic description of topological metasurfaces is developed, providing a deeper understanding of the physical mechanisms leading to the polarization-dependent breaking of translational symmetry in contrast with pro…
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Relying on the local orientation of nanostructures, Pancharatnam-Berry metasurfaces are currently enabling a new generation of polarization-sensitive optical devices. A systematical mesoscopic description of topological metasurfaces is developed, providing a deeper understanding of the physical mechanisms leading to the polarization-dependent breaking of translational symmetry in contrast with propagation phase effects. These theoretical results, along with interferometric experiments, contribute to the development of a solid theoretical framework for arbitrary polarization-dependent metasurfaces.
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Submitted 26 February, 2021;
originally announced February 2021.
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Probing nanoscale thermal transport with cathodoluminescence thermometry
Authors:
Kelly W. Mauser,
Magdalena Solà-Garcia,
Matthias Liebtrau,
Benjamin Damilano,
Pierre-Marie Coulon,
Stéphane Vézian,
Philip Shields,
Sophie Meuret,
Albert Polman
Abstract:
Thermal properties have an outsized impact on efficiency and sensitivity of devices with nanoscale structures, such as in integrated electronic circuits. A number of thermal conductivity measurements for semiconductor nanostructures exist, but are hindered by the diffraction limit of light, the need for transducer layers, the slow-scan rate of probes, ultra-thin sample requirements, or extensive f…
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Thermal properties have an outsized impact on efficiency and sensitivity of devices with nanoscale structures, such as in integrated electronic circuits. A number of thermal conductivity measurements for semiconductor nanostructures exist, but are hindered by the diffraction limit of light, the need for transducer layers, the slow-scan rate of probes, ultra-thin sample requirements, or extensive fabrication. Here, we overcome these limitations by extracting temperature from measurements of bandgap cathodoluminescence in GaN nanowires with spatial resolution limited by the electron cascade, and use this to determine thermal conductivities in the range of 19-68 W/m*K in three new ways. The electron beam acts simultaneously as a temperature probe and as a controlled delta-function-like heat source to measure thermal conductivities using steady-state methods, and we introduce a frequency-domain method using pulsed electron beam excitation. The different thermal conductivity measurements we explore agree within error where comparable. Our results provide novel methods of measuring thermal properties that allow for rapid, in-situ, high-resolution measurements of integrated circuits and semiconductor nanodevices, and open the door for electron-beam based nanoscale phonon transport studies.
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Submitted 29 December, 2020;
originally announced December 2020.
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Complexity of dipolar exciton Mott transition in GaN/(AlGa)N nanostructures
Authors:
F. Chiaruttini,
T. Guillet,
C. Brimont,
D. Scalbert,
S. Cronenberger,
B. Jouault,
P. Lefebvre,
B. Damilano,
M. Vladimirova
Abstract:
The Mott transition from a dipolar excitonic liquid to an electron-hole plasma is demonstrated in a wide GaN/(Al,Ga)N quantum well at $T=7$K by means of spatially-resolved magneto-photoluminescence spectroscopy. Increasing optical excitation density we drive the system from the excitonic state, characterized by a diamagnetic behavior and thus a quadratic energy dependence on the magnetic field, to…
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The Mott transition from a dipolar excitonic liquid to an electron-hole plasma is demonstrated in a wide GaN/(Al,Ga)N quantum well at $T=7$K by means of spatially-resolved magneto-photoluminescence spectroscopy. Increasing optical excitation density we drive the system from the excitonic state, characterized by a diamagnetic behavior and thus a quadratic energy dependence on the magnetic field, to the unbound electron-hole state, characterized by a linear shift of the emission energy with the magnetic field. The complexity of the system requires to take into account both the density-dependence of the exciton binding energy and the exciton-exciton interaction and correlation energy that are of the same order of magnitude. We estimate the carrier density at Mott transition as $n_\mathrm{Mott}\approx 2\times 10^{11}$cm$^{-2}$ and address the role played by excitonic correlations in this process. Our results strongly rely on the spatial resolution of the photoluminescence and the assessment of the carrier transport. We show, that in contrast to GaAs/(Al,Ga)As systems, where transport of dipolar magnetoexcitons is strongly quenched by the magnetic field due to exciton mass enhancement, in GaN/(Al,Ga)N the band parameters are such that the transport is preserved up to $9$T.
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Submitted 16 October, 2020;
originally announced October 2020.
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Analysis of low-threshold optically pumped III-nitride microdisk lasers
Authors:
Farsane Tabataba-Vakili,
Christelle Brimont,
Blandine Alloing,
Benjamin Damilano,
Laetitia Doyennette,
Thierry Guillet,
Moustafa El Kurdi,
Sébastien Chenot,
Virginie Brändli,
Eric Frayssinet,
Jean-Yves Duboz,
Fabrice Semond,
Bruno Gayral,
Philippe Boucaud
Abstract:
Low-threshold lasing under pulsed optical pum** is demonstrated at room temperature for III-nitride microdisks with InGaN/GaN quantum wells on Si in the blue spectral range. Thresholds in the range of 18 kW/cm2 have been achieved along with narrow linewidths of 0.07 nm and a large peak to background dynamic of 300. We compare this threshold range with the one that can be calculated using a rate…
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Low-threshold lasing under pulsed optical pum** is demonstrated at room temperature for III-nitride microdisks with InGaN/GaN quantum wells on Si in the blue spectral range. Thresholds in the range of 18 kW/cm2 have been achieved along with narrow linewidths of 0.07 nm and a large peak to background dynamic of 300. We compare this threshold range with the one that can be calculated using a rate equation model. We show that thresholds in the few kW/cm2 range constitute the best that can be achieved with III-nitride quantum wells at room temperature. The sensitivity of lasing on the fabrication process is also discussed.
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Submitted 10 September, 2020;
originally announced September 2020.
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Monolithic integration of ultraviolet microdisk lasers into photonic circuits in a III-nitride-on-silicon platform
Authors:
Farsane Tabataba-Vakili,
Blandine Alloing,
Benjamin Damilano,
Hassen Souissi,
Christelle Brimont,
Laetitia Doyennette,
Thierry Guillet,
Xavier Checoury,
Moustafa El Kurdi,
Sébastien Chenot,
Eric Frayssinet,
Jean-Yves Duboz,
Fabrice Semond,
Bruno Gayral,
Philippe Boucaud
Abstract:
Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride on silicon platform with gallium nitride (GaN) as the main waveguiding layer. The photonic circuits consist of a microdisk and a pulley waveguide terminated by out-coupling gratings. We measure quality factors up to 3500 under continuous-wave excitation. Lasing is observed from 374 nm to 399 nm un…
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Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride on silicon platform with gallium nitride (GaN) as the main waveguiding layer. The photonic circuits consist of a microdisk and a pulley waveguide terminated by out-coupling gratings. We measure quality factors up to 3500 under continuous-wave excitation. Lasing is observed from 374 nm to 399 nm under pulsed excitation, achieving low threshold energies of $0.14 ~\text{mJ/cm}^2$ per pulse (threshold peak powers of $35 ~\text{kW/cm}^2$). A large peak to background dynamic of around 200 is observed at the out-coupling grating for small gaps of 50 nm between the disk and waveguide. These devices operate at the limit of what can be achieved with GaN in terms of operation wavelength.
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Submitted 28 July, 2020; v1 submitted 24 June, 2020;
originally announced June 2020.
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Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon
Authors:
Farsane Tabataba-Vakili,
Laetitia Doyennette,
Christelle Brimont,
Thierry Guillet,
Stéphanie Rennesson,
Benjamin Damilano,
Eric Frayssinet,
Jean-Yves Duboz,
Xavier Checoury,
Sébastien Sauvage,
Moustafa El Kurdi,
Fabrice Semond,
Bruno Gayral,
Philippe Boucaud
Abstract:
On-chip microlaser sources in the blue constitute an important building block for complex integrated photonic circuits on silicon. We have developed photonic circuits operating in the blue spectral range based on microdisks and bus waveguides in III-nitride on silicon. We report on the interplay between microdisk-waveguide coupling and its optical properties. We observe critical coupling and phase…
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On-chip microlaser sources in the blue constitute an important building block for complex integrated photonic circuits on silicon. We have developed photonic circuits operating in the blue spectral range based on microdisks and bus waveguides in III-nitride on silicon. We report on the interplay between microdisk-waveguide coupling and its optical properties. We observe critical coupling and phase matching, i.e. the most efficient energy transfer scheme, for very short gap sizes and thin waveguides (g = 45 nm and w = 170 nm) in the spontaneous emission regime. Whispering gallery mode lasing is demonstrated for a wide range of parameters with a strong dependence of the threshold on the loaded quality factor. We show the dependence and high sensitivity of the output signal on the coupling. Lastly, we observe the impact of processing on the tuning of mode resonances due to the very short coupling distances. Such small footprint on-chip integrated microlasers providing maximum energy transfer into a photonic circuit have important potential applications for visible-light communication and lab-on-chip bio-sensors.
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Submitted 2 December, 2019; v1 submitted 21 October, 2019;
originally announced October 2019.
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III-nitride on silicon electrically injected microrings for nanophotonic circuits
Authors:
Farsane Tabataba-Vakili,
Stéphanie Rennesson,
Benjamin Damilano,
Eric Frayssinet,
Jean-Yves Duboz,
Fabrice Semond,
Iannis Roland,
Bruno Paulillo,
Raffaele Colombelli,
Moustafa El Kurdi,
Xavier Checoury,
Sébastien Sauvage,
Laetitia Doyennette,
Christelle Brimont,
Thierry Guillet,
Bruno Gayral,
Philippe Boucaud
Abstract:
Nanophotonic circuits using group III-nitrides on silicon are still lacking one key component: efficient electrical injection. In this paper we demonstrate an electrical injection scheme using a metal microbridge contact in thin III-nitride on silicon mushroom-type microrings that is compatible with integrated nanophotonic circuits with the goal of achieving electrically injected lasing. Using a c…
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Nanophotonic circuits using group III-nitrides on silicon are still lacking one key component: efficient electrical injection. In this paper we demonstrate an electrical injection scheme using a metal microbridge contact in thin III-nitride on silicon mushroom-type microrings that is compatible with integrated nanophotonic circuits with the goal of achieving electrically injected lasing. Using a central buried n-contact to bypass the insulating buffer layers, we are able to underetch the microring, which is essential for maintaining vertical confinement in a thin disk. We demonstrate direct current room-temperature electroluminescence with 440 mW/cm$^2$ output power density at 20 mA from such microrings with diameters of 30 to 50 $μ$m. The first steps towards achieving an integrated photonic circuit are demonstrated.
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Submitted 5 April, 2019;
originally announced April 2019.
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Blue Microlasers Integrated on a Photonic Platform on Silicon
Authors:
Farsane Tabataba-Vakili,
Laetitia Doyennette,
Christelle Brimont,
Thierry Guillet,
Stéphanie Rennesson,
Eric Frayssinet,
Benjamin Damilano,
Jean-Yves Duboz,
Fabrice Semond,
Iannis Roland,
Moustafa El Kurdi,
Xavier Checoury,
Sébastien Sauvage,
Bruno Gayral,
Philippe Boucaud
Abstract:
The main interest of group-III-nitride nanophotonic circuits is the integration of active structures and laser sources. A photonic platform of group-III-nitride microdisk lasers integrated on silicon and emitting in the blue spectral range is demonstrated. The active microdisks are side-coupled to suspended bus waveguides, and the coupled emission is guided and outcoupled to free space using grati…
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The main interest of group-III-nitride nanophotonic circuits is the integration of active structures and laser sources. A photonic platform of group-III-nitride microdisk lasers integrated on silicon and emitting in the blue spectral range is demonstrated. The active microdisks are side-coupled to suspended bus waveguides, and the coupled emission is guided and outcoupled to free space using grating couplers. A small gap size of less than 100 nm between the disk and the waveguide is required in the blue spectral range for optimal evanescent coupling. To avoid reabsorption of the microdisk emission in the waveguide, the quantum wells are etched away from the waveguide. Under continuous-wave excitation, loaded quality factors greater than 2000 are observed for the whispering gallery modes for devices with small gaps and large waveguide bending angles. Under pulsed excitation conditions, lasing is evidenced for 3 $μ$m diameter microdisks integrated in a full photonic circuit. We thus present a first demonstration of a III-nitride microlaser coupled to a nanophotonic circuit.
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Submitted 5 April, 2019;
originally announced April 2019.
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Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics
Authors:
F. Chiaruttini,
T. Guillet,
C. Brimont,
B. Jouault,
P. Lefebvre,
S. Chenot,
Y. Cordier,
B. Damilano,
M. Vladimirova
Abstract:
Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of dipolar excitons. We demonstrate the in-plane confinement and cooling of these excitons, when trapped in the electrostatic potential created by semitransparent electrodes of various shapes deposited on the…
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Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of dipolar excitons. We demonstrate the in-plane confinement and cooling of these excitons, when trapped in the electrostatic potential created by semitransparent electrodes of various shapes deposited on the sample surface. This result is a prerequisite for the electrical control of the exciton densities and fluxes, as well for studies of the complex phase diagram of these dipolar bosons at low temperature.
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Submitted 8 February, 2019;
originally announced February 2019.
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AlN interlayer to improve the epitaxial growth of SmN on GaN (0001)
Authors:
Stéphane Vézian,
Benjamin Damilano,
Franck Natali,
Mohamed Al Khalfioui,
Jean Massies
Abstract:
An in situ study of the epitaxial growth of SmN thin films on Ga-polar GaN (0001)templates by molecular beam epitaxy is reported. Using X-ray photoelectron spectroscopy we found that Ga segregates at the surface during the first stages of growth. We showed that the problem related to Ga surface segregation can be simply suppressed by growing a few monolayers of AlN before starting the SmN growth.…
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An in situ study of the epitaxial growth of SmN thin films on Ga-polar GaN (0001)templates by molecular beam epitaxy is reported. Using X-ray photoelectron spectroscopy we found that Ga segregates at the surface during the first stages of growth. We showed that the problem related to Ga surface segregation can be simply suppressed by growing a few monolayers of AlN before starting the SmN growth. This results in a significant improvement of the crystallinity of SmN thin films assessed by X-ray diffraction.
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Submitted 7 April, 2016;
originally announced April 2016.
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Highly resistive epitaxial Mg-doped GdN thin films
Authors:
C. -M. Lee,
H. Warring,
S. Vézian,
B. Damilano,
S. Granville,
M. Al Khalfioui,
Y. Cordier,
H. J. Trodahl,
B. J. Ruck,
F. Natali
Abstract:
We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional do** with magnesium. Mg-doped GdN layers with resistivities of 1000 Ω.cm and carrier concentrations of 10E16 cm-3 are obtained for films with Mg concentrations up to 5 x 10E19 atoms/cm3. X-ray diffraction rocking curves indicate that Mg-doped GdN films have crystalline quality very similar to undoped GdN fi…
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We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional do** with magnesium. Mg-doped GdN layers with resistivities of 1000 Ω.cm and carrier concentrations of 10E16 cm-3 are obtained for films with Mg concentrations up to 5 x 10E19 atoms/cm3. X-ray diffraction rocking curves indicate that Mg-doped GdN films have crystalline quality very similar to undoped GdN films, showing that the Mg do** did not affect the structural properties of the films. A decrease of the Curie temperature with decreasing the electron density is observed, supporting a recently suggested magnetic polaron scenario [F. Natali et al., Phys. Rev. B 87, 035202 (2013)].
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Submitted 29 October, 2014;
originally announced October 2014.
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The role of magnetic polarons in ferromagnetic GdN
Authors:
Franck Natali,
Ben Ruck,
Joe Trodahl,
Do Le Binh,
Stephane Vezian,
Benjamin Damilano,
Yvon Cordier,
Fabrice Semond,
Claire Meyer
Abstract:
We report an interplay between magnetism and charge transport in the ferromagnetic semiconductor GdN, pointing to the formation of magnetic polarons centred on nitrogen vacancies. The scenario goes some way to resolving a long-standing disagreement between the measured and predicted Curie temperature in GdN. It further constitutes an extension of concepts that relate closely to the behaviour of fe…
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We report an interplay between magnetism and charge transport in the ferromagnetic semiconductor GdN, pointing to the formation of magnetic polarons centred on nitrogen vacancies. The scenario goes some way to resolving a long-standing disagreement between the measured and predicted Curie temperature in GdN. It further constitutes an extension of concepts that relate closely to the behaviour of ferromagnetic semiconductors generally, and EuO in particular.
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Submitted 12 October, 2012;
originally announced October 2012.
