Showing 1–1 of 1 results for author: Daibou, T
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MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height
Authors:
Hiroaki Sukegawa,
Yushi Kato,
Mohamed Belmoubarik,
P. -H. Cheng,
Tadaomi Daibou,
Naoharu Shimomura,
Yuuzo Kamiguchi,
Junichi Ito,
Hiroaki Yoda,
Tadakatsu Ohkubo,
Seiji Mitani,
Kazuhiro Hono
Abstract:
Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe(001) magnetic tunnel junctions (MTJs) were fabricated by magnetron sputtering. Tunnel magnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4 K) was observed, suggesting a TMR enhancement by the coherent tunneling effect in the MgGa2O4 barrier. The MgGa2O4 layer had a spinel structure and it showed good lattice matching with…
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Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe(001) magnetic tunnel junctions (MTJs) were fabricated by magnetron sputtering. Tunnel magnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4 K) was observed, suggesting a TMR enhancement by the coherent tunneling effect in the MgGa2O4 barrier. The MgGa2O4 layer had a spinel structure and it showed good lattice matching with the Fe layers owing to slight tetragonal lattice distortion of MgGa2O4. Barrier thickness dependence of the tunneling resistance and current-voltage characteristics revealed that the barrier height of the MgGa2O4 barrier is much lower than that in an MgAl2O4 barrier. This study demonstrates the potential of Ga-based spinel oxides for MTJ barriers having a large TMR ratio at a low resistance area product.
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Submitted 11 November, 2016;
originally announced November 2016.
