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Pressure-induced superconductivity in a novel germanium allotrope
Authors:
Liangzi Deng,
Jianbo Zhang,
Yuki Sakai,
Zhongjia Tang,
Moein Adnani,
Rabin Dahal,
Alexander P. Litvinchuk,
James R. Chelikowsky,
Marvin L. Cohen,
Russell J. Hemley,
Arnold Guloy,
Yang Ding,
Ching-Wu Chu
Abstract:
High-pressure studies on elements play an essential role in superconductivity research, with implications for both fundamental science and applications. Here we report the experimental discovery of surprisingly low pressure driving a novel germanium allotrope into a superconducting state in comparison to that for alpha-Ge. Raman measurements revealed structural phase transitions and possible elect…
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High-pressure studies on elements play an essential role in superconductivity research, with implications for both fundamental science and applications. Here we report the experimental discovery of surprisingly low pressure driving a novel germanium allotrope into a superconducting state in comparison to that for alpha-Ge. Raman measurements revealed structural phase transitions and possible electronic topological transitions under pressure up to 58 GPa. Based on pressure-dependent resistivity measurements, superconductivity was induced above 2 GPa and the maximum Tc of 6.8 K was observed under 4.6 GPa. Interestingly, a superconductivity enhancement was discovered during decompression, indicating the possibility of maintaining pressure-induced superconductivity at ambient pressure with better superconducting performance. Density functional theory analysis further suggested that the electronic structure of Ge (oP32) is sensitive to its detailed geometry and revealed that disorder in the beta-tin structure leads to a higher Tc in comparison to the perfect beta-tin Ge.
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Submitted 17 January, 2024;
originally announced January 2024.
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Pressure-induced high-temperature superconductivity retained at ambient
Authors:
Liangzi Deng,
Trevor Bontke,
Rabin Dahal,
Yu Xie,
Bin Gao,
Xue Li,
Ketao Yin,
Melissa Gooch,
Donald Rolston,
Tong Chen,
Zheng Wu,
Yanming Ma,
Pengcheng Dai,
Ching-Wu Chu
Abstract:
To raise the superconducting-transition temperature (Tc) has been the driving force for the long, sustained effort in superconductivity research. Recent progress in hydrides with Tcs up to 287 K under 267 GPa has heralded a new era of room-temperature superconductivity (RTS) with immense technological promise. Indeed, RTS has lifted the temperature barrier for the ubiquitous application of superco…
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To raise the superconducting-transition temperature (Tc) has been the driving force for the long, sustained effort in superconductivity research. Recent progress in hydrides with Tcs up to 287 K under 267 GPa has heralded a new era of room-temperature superconductivity (RTS) with immense technological promise. Indeed, RTS has lifted the temperature barrier for the ubiquitous application of superconductivity. Unfortunately, formidable pressure is required to attain such high Tcs. The most effective relief to this impasse is to remove the pressure needed while retaining the pressure-induced Tc without pressure. Here we show such a possibility in the pure and doped high-temperature superconductor (HTS) FeSe by retaining, at ambient via pressure-quenching (PQ), its Tc up to 37 K (quadrupling that of a pristine FeSe) and other pressure-induced phases. We have also observed that some phases remain stable without pressure at up to 300 K and for at least 7 days. The observations are in qualitative agreement with our ab initio simulations using the solid-state nudged elastic band (SSNEB) method. We strongly believe that the PQ technique developed here can be adapted to the RTS hydrides and other materials of value with minimal effort.
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Submitted 12 April, 2021;
originally announced April 2021.
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Room-temperature skyrmion phase in bulk Cu2OSeO3 under high pressures
Authors:
Liangzi Deng,
Hung-Cheng Wu,
Alexander P. Litvinchuk,
Noah F. Q. Yuan,
Jey-Jau Lee,
Rabin Dahal,
Helmuth Berger,
Hung-Duen Yang,
Ching-Wu Chu
Abstract:
A skyrmion state in a non-centrosymmetric helimagnet displays topologically protected spin textures with profound technological implications for high density information storage, ultrafast spintronics, and effective microwave devices. Usually, its equilibrium state in a bulk helimagnet occurs only over a very restricted magnetic-field--temperature phase space and often in the low temperature regio…
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A skyrmion state in a non-centrosymmetric helimagnet displays topologically protected spin textures with profound technological implications for high density information storage, ultrafast spintronics, and effective microwave devices. Usually, its equilibrium state in a bulk helimagnet occurs only over a very restricted magnetic-field--temperature phase space and often in the low temperature region near the magnetic transition temperature Tc. We have expanded and enhanced the skyrmion phase region from the small range of 55-58.5 K to 5-300 K in single-crystalline Cu2OSeO3 by pressures up to 42.1 GPa through a series of phase transitions from the cubic P2(_1)3, through orthorhombic P2(_1)2(_1)2(_1) and monoclinic P2(_1), and finally to the triclinic P1 phase, using our newly developed ultrasensitive high-pressure magnetization technique. The results are in agreement with our Ginzburg-Landau free energy analyses, showing that pressures tend to stabilize the skyrmion states and at higher temperatures. The observations also indicate that the skyrmion state can be achieved at higher temperatures in various crystal symmetries, suggesting the insensitivity of skyrmions to the underlying crystal lattices and thus the possible more ubiquitous presence of skyrmions in helimagnets.
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Submitted 10 April, 2020;
originally announced April 2020.
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Ultra-high Vacuum Deposition of Higher Manganese Silicide Mn4Si7 Thin Films
Authors:
Rajendra P Dulal,
Bishnu R Dahal,
Ian L Pegg,
John Philip
Abstract:
We have successfully grown one of the higher manganese silicides, Mn4Si7 thin films on silicon (100) substrates using an ultra-high vacuum deposition with a base pressure of 1x10-9 torr. The thickness of the film was varied from 65-100 nm. These films exhibit a tetragonal crystal structure and display paramagnetic behavior as predicted for the stoichiometric Mn4Si7 system. They have a resistivity…
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We have successfully grown one of the higher manganese silicides, Mn4Si7 thin films on silicon (100) substrates using an ultra-high vacuum deposition with a base pressure of 1x10-9 torr. The thickness of the film was varied from 65-100 nm. These films exhibit a tetragonal crystal structure and display paramagnetic behavior as predicted for the stoichiometric Mn4Si7 system. They have a resistivity of 3.321 x 10-5 ohm-m at room temperature and show a semi-metallic nature.
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Submitted 4 April, 2018;
originally announced April 2018.
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Solid-state neutron detectors based on thickness scalable hexagonal boron nitride
Authors:
Kawser Ahmed,
Rajendra Dahal,
Adam Weltz,
James J. -Q. Lu,
Yaron Danon,
Ishwara B. Bhat
Abstract:
This paper reports on the device processing and characterization of hexagonal boron nitride (hBN) based solid-state thermal neutron detectors, where hBN thickness varied from 2.5 to 15 microns. These natural hBN epilayers (with 19.9% B-10) were grown by a low pressure chemical vapor deposition process. Complete dry processing was adopted for the fabrication of these metal-semiconductor-metal (MSM)…
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This paper reports on the device processing and characterization of hexagonal boron nitride (hBN) based solid-state thermal neutron detectors, where hBN thickness varied from 2.5 to 15 microns. These natural hBN epilayers (with 19.9% B-10) were grown by a low pressure chemical vapor deposition process. Complete dry processing was adopted for the fabrication of these metal-semiconductor-metal (MSM) configuration detectors. These detectors showed intrinsic thermal neutron detection efficiency values of 0.86%, 2.4%, 3.15%, and 4.71% for natural hBN thickness values of 2.5, 7.5, 10, and 15 microns, respectively. Measured efficiencies are very close (more than 92%) to the theoretical maximum efficiencies for corresponding hBN thickness values for these detectors. This clearly shows the hBN thickness scalability of these detectors. A 15-micron thick hBN based MSM detector is expected to yield an efficiency of 21.4%, if enriched hBN (with ~100% B-10) is used instead of natural hBN. These results demonstrate that the fabrication of hBN thickness scalable highly efficient thermal neutron detectors is possible.
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Submitted 11 October, 2016;
originally announced October 2016.
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Metalorganic chemical vapor deposition of hexagonal boron nitride on (001) sapphire substrates for thermal neutron detector applications
Authors:
Kawser Ahmed,
Rajendra Dahal,
Adam Weltz,
James J. -Q. Lu,
Yaron Danon,
Ishwara B. Bhat
Abstract:
This paper reports on the growth and characterization of hexagonal boron nitride (hBN) and its use for solid-state thermal neutron detection. The hBN epilayers were grown by metalorganic chemical vapor deposition on sapphire substrates at a temperature of 1350 C. X-ray diffraction peak from the (002) hBN plane at a 2theta angle of 26.7 deg exhibited the c-lattice constant of 6.66 Å for these films…
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This paper reports on the growth and characterization of hexagonal boron nitride (hBN) and its use for solid-state thermal neutron detection. The hBN epilayers were grown by metalorganic chemical vapor deposition on sapphire substrates at a temperature of 1350 C. X-ray diffraction peak from the (002) hBN plane at a 2theta angle of 26.7 deg exhibited the c-lattice constant of 6.66 Å for these films. A strong peak corresponding to the high frequency Raman active mode of hBN was found for the films at 1370.5/cm. hBN-based solid-state neutron detectors were fabricated and tested with a metal-semiconductor-metal configuration with an electrode spacing of 1 mm and hBN thickness of 2.5 micron. Fabricated detectors showed strong response to deep UV light as well. An intrinsic thermal neutron detection efficiency of 0.86% was measured, which is close to the theoretically expected efficiency of 0.87%. These results demonstrate that epitaxial hBN films are promising for thermal neutron detection applications.
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Submitted 8 September, 2016;
originally announced September 2016.
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Effects of sapphire nitridation and growth temperature on the epitaxial growth of hexagonal boron nitride on sapphire
Authors:
Kawser Ahmed,
Rajendra Dahal,
Adam Weltz,
James J. -Q. Lu,
Yaron Danon,
Ishwara B. Bhat
Abstract:
This paper reports on the epitaxial growth of hexagonal boron nitride (hBN) films on sapphire substrates in a cold wall chemical vapor deposition (CVD) system where different sapphire nitridation and hBN growth temperatures were employed. A thin and amorphous nitridated layer was formed at a low temperature (850 C), which enabled subsequent epitaxial hBN growth at 1350 C. The influences of the sap…
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This paper reports on the epitaxial growth of hexagonal boron nitride (hBN) films on sapphire substrates in a cold wall chemical vapor deposition (CVD) system where different sapphire nitridation and hBN growth temperatures were employed. A thin and amorphous nitridated layer was formed at a low temperature (850 C), which enabled subsequent epitaxial hBN growth at 1350 C. The influences of the sapphire nitridation temperature and the growth temperature on the film quality were analyzed by X-ray diffraction (XRD) measurements. Higher than optimum nitridation and growth temperatures improve the crystalline quality of the nitridated layer, but does not favor the epitaxial growth of hBN. hBN films grown at the optimum conditions exhibit the c-lattice constant of 6.66 Å from the XRD θ-2θ scan, and the characteristic in plane stretching vibration at 1370.5/cm from Raman spectroscopy. X-ray photoelectron spectroscopy analysis confirmed the formation of stoichiometric hBN films with excellent uniformity.
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Submitted 3 September, 2016;
originally announced September 2016.
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Minimal physical requirements for crystal growth self-poisoning
Authors:
Stephen Whitelam,
Yuba Raj Dahal,
Jeremy D. Schmit
Abstract:
Self-poisoning is a kinetic trap that can impair or prevent crystal growth in a wide variety of physical settings. Here we use dynamic mean-field theory and computer simulation to argue that poisoning is ubiquitous because its emergence requires only the notion that a molecule can bind in two (or more) ways to a crystal; that those ways are not energetically equivalent; and that the associated bin…
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Self-poisoning is a kinetic trap that can impair or prevent crystal growth in a wide variety of physical settings. Here we use dynamic mean-field theory and computer simulation to argue that poisoning is ubiquitous because its emergence requires only the notion that a molecule can bind in two (or more) ways to a crystal; that those ways are not energetically equivalent; and that the associated binding events occur with sufficiently unequal probability. If these conditions are met then the steady-state growth rate is in general a non-monotonic function of the thermodynamic driving force for crystal growth, which is the characteristic of poisoning. Our results also indicate that relatively small changes of system parameters could be used to induce recovery from poisoning.
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Submitted 4 January, 2016; v1 submitted 19 October, 2015;
originally announced October 2015.
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Centers and characters of Jacobi group-invariant differential operator algebras
Authors:
Charles H. Conley,
Rabin Dahal
Abstract:
We study the algebras of differential operators invariant with respect to the scalar slash actions of real Jacobi groups of arbitrary rank. These algebras are non-commutative and are generated by their elements of orders 2 and 3. We prove that their centers are polynomial in one variable and are generated by the Casimir operator. For slash actions with invertible indices we also compute the charac…
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We study the algebras of differential operators invariant with respect to the scalar slash actions of real Jacobi groups of arbitrary rank. These algebras are non-commutative and are generated by their elements of orders 2 and 3. We prove that their centers are polynomial in one variable and are generated by the Casimir operator. For slash actions with invertible indices we also compute the characters of the IDO algebras: in rank exceeding 1 there are two, and in rank 1 there are in general five. In rank 1 we compute in addition all irreducible admissible representations of the IDO algebras.
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Submitted 27 February, 2014;
originally announced February 2014.
