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New insights into the origin of the first sharp diffraction peak in amorphous silica from an analysis of chemical and radial ordering
Authors:
Parthapratim Biswas,
Devilal Dahal,
Stephen R. Elliott
Abstract:
The structural origin of the first sharp diffraction peak (FSDP) in amorphous silica is studied by analyzing chemical and radial ordering of silicon (Si) and oxygen (O) atoms in binary amorphous networks. The study shows that the chemical order involving Si--O and O--O pairs play a major role in the formation of the FSDP in amorphous silica. This is supplemented by small contributions arising from…
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The structural origin of the first sharp diffraction peak (FSDP) in amorphous silica is studied by analyzing chemical and radial ordering of silicon (Si) and oxygen (O) atoms in binary amorphous networks. The study shows that the chemical order involving Si--O and O--O pairs play a major role in the formation of the FSDP in amorphous silica. This is supplemented by small contributions arising from the relatively weak Si--Si correlations in the Fourier space. A shell-by-shell analysis of the radial correlations between Si--Si, Si--O and O--O atoms in the network reveals that the position and the intensity of the FSDP are largely determined by atomic pair correlations originating from the first two/three radial shells on a length scale of about 5--8 Å, whereas the fine structure of the intensity curve in the vicinity of the FSDP is perturbatively modified by atomic correlations arising from the radial shells beyond 8 Å. The study leads to a simple mathematical relationship between the position of the radial peaks ($r_k$) in the partial pair-correlation functions and the diffraction peaks ($Q_k$) that can be used to obtain approximate positions of the FSDP and the principal peak. The results are complemented by numerical calculations and an accurate semi-analytical expression for the diffraction intensity obtained from the partial pair-correlation functions of amorphous silica for a given radial shell.
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Submitted 23 March, 2024; v1 submitted 15 March, 2024;
originally announced March 2024.
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Ab initio studies of the impact of the Debye-Waller factor on the structural and dynamical properties of amorphous semiconductors: The case of $a$-Si
Authors:
Devilal Dahal,
Raymond Atta-Fynn,
Stephen R. Elliott,
Parthapratim Biswas
Abstract:
This paper presents a first-principles study of the Debye-Waller factor and the Debye temperature for amorphous silicon ($a$-Si) from lattice-dynamical calculations and direct molecular-dynamics simulations using density-functional theory (DFT). The effects of temperature and structural disorder on the intensity of the diffraction maxima and the vibrational mean-square displacement (MSD) of Si ato…
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This paper presents a first-principles study of the Debye-Waller factor and the Debye temperature for amorphous silicon ($a$-Si) from lattice-dynamical calculations and direct molecular-dynamics simulations using density-functional theory (DFT). The effects of temperature and structural disorder on the intensity of the diffraction maxima and the vibrational mean-square displacement (MSD) of Si atoms are studied in the harmonic approximation, with particular emphasis on the bond-length disorder, the presence of coordination defects, and microvoids in $a$-Si networks. It has been observed that the MSDs associated with tetrahedrally-bonded Si atoms are considerably lower than their dangling-bond counterparts -- originating from isolated and vacancy-induced clustered defects -- and those on the surface of microvoids, leading to an asymmetric non-gaussian tail in the distribution of atomic displacements. An examination of the effect of anharmonicity on the MSD at high temperatures using direct $ab$ $initio$ molecular-dynamics simulations (without the harmonic approximation) suggests that the vibrational motion in $a$-Si is practically unaffected by anharmonic effects at temperatures below 400 K, as far as the present DFT calculations are concerned. The Debye temperature of $a$-Si is found to be in the range of 488--541 K from specific-heat and MSD calculations using first-principles lattice-dynamical calculations in the harmonic approximation, which matches closely with the experimental value of 487--528 K obtained from specific-heat measurements of $a$-Si at low temperatures.
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Submitted 15 July, 2023;
originally announced July 2023.
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Plasmon dam** rates in Coulomb-coupled two-dimensional layers in a heterostructure
Authors:
Dipendra Dahal,
Godfrey Gumbs,
Andrii Iurov,
Chin-Sen Ting
Abstract:
The Coulomb excitations of charge density oscillation are calculated for a double-layer heterostructure. Specifically, we consider two-dimensional (2D) layers of silicene and graphene on a substrate. From the obtained surface response function, we calculated the plasmon dispersion relations which demonstrate the way in which the Coulomb coupling renormalizes the plasmon frequencies. Additionally,…
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The Coulomb excitations of charge density oscillation are calculated for a double-layer heterostructure. Specifically, we consider two-dimensional (2D) layers of silicene and graphene on a substrate. From the obtained surface response function, we calculated the plasmon dispersion relations which demonstrate the way in which the Coulomb coupling renormalizes the plasmon frequencies. Additionally, we present a novel result for the dam** rates of the plasmons in this Coulomb coupled heterostructure and compare these results as the separation between layers is varied.
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Submitted 29 April, 2022;
originally announced May 2022.
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Extended-range order in tetrahedral amorphous semiconductors: The case of amorphous silicon
Authors:
Devilal Dahal,
Stephen R. Elliott,
Parthapratim Biswas
Abstract:
This paper reports the presence of extended-range ordering in the atomic pair-correlation function of amorphous silicon ($a$-Si) using ultra-large atomistic models obtained from Monte Carlo and molecular-dynamics simulations. The extended-range order manifests itself in the form of radial oscillations, on the length scale of 20-40 angstrom, which are examined by directly analyzing the radial distr…
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This paper reports the presence of extended-range ordering in the atomic pair-correlation function of amorphous silicon ($a$-Si) using ultra-large atomistic models obtained from Monte Carlo and molecular-dynamics simulations. The extended-range order manifests itself in the form of radial oscillations, on the length scale of 20-40 angstrom, which are examined by directly analyzing the radial distribution of atoms in distant coordination shells and comparing the same with those from a class of partially-ordered networks of Si atoms and disordered configurations of crystalline silicon from an information-theoretic point of view. The study suggests that the extended-range radial oscillations principally originate from the propagation of radial ordering from the first few atomic shells to a distance of up to 40 angstrom. The effect of these oscillations on the first sharp diffraction peak (FSDP) in the structure factor is addressed by obtaining a semi-analytical expression for the static structure factor of $a$-Si, and calculating an estimate of the error of the intensity of the FSDP associated with the truncation of radial information from distant shells. The results indicate that the extended-range oscillations do not have any noticeable effects on the position and intensity of the FSDP, which are primarily determined by the medium-range atomic correlations of up to a length of 20 angstrom in amorphous silicon.
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Submitted 26 February, 2022;
originally announced February 2022.
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Finite-temperature plasmons, dam** and collective behavior for $α-\mathcal{T}_3$ model
Authors:
Andrii Iurov,
Liubov Zhemchuzhna,
Godfrey Gumbs,
Danhong Huang,
Dipendra Dahal,
Yonatan Abranyos
Abstract:
We have conducted a thorough theoretical and numerical investigation of the electronic susceptibility, polarizability, plasmons, their dam** rates, as well as the static screening in pseudospin-1 Dirac cone materials with a flat band, or for a general $α- \mathcal{T}_3$ model, at finite temperatures. This includes calculating the polarization function, plasmon dispersions and their dam** rates…
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We have conducted a thorough theoretical and numerical investigation of the electronic susceptibility, polarizability, plasmons, their dam** rates, as well as the static screening in pseudospin-1 Dirac cone materials with a flat band, or for a general $α- \mathcal{T}_3$ model, at finite temperatures. This includes calculating the polarization function, plasmon dispersions and their dam** rates at arbitrary temperatures and obtaining analytical approximations the long wavelength limit, low and high temperatures. We demonstrate that the integral transformation of the polarization function cannot be used directly for a dice lattice revealing some fundamental properties and important applicability limits of the flat band dispersions model. At $k_B T \ll E_F$, the largest temperature-induced change of the polarization function and plasmons comes from the mismatch between the chemical potential and the Fermi energy. We have also obtained a series of closed-form semi-analytical expressions for the static limit of the polarization function of an arbitrary $α- \mathcal{T}_3$ material at any temperature with exact analytical formulas for the high, low and zero temperature limits which is of tremendous importance for all types of transport and screening calculations for the flat band Dirac materials.
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Submitted 3 February, 2022;
originally announced February 2022.
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Application of Common Spatial Patterns in Gravitational Waves Detection
Authors:
Damodar Dahal
Abstract:
Common Spatial Patterns (CSP) is a feature extraction algorithm widely used in Brain-Computer Interface (BCI) Systems for detecting Event-Related Potentials (ERPs) in multi-channel magneto/electroencephalography (MEG/EEG) time series data. In this article, we develop and apply a CSP algorithm to the problem of identifying whether a given epoch of multi-detector Gravitational Wave (GW) strains cont…
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Common Spatial Patterns (CSP) is a feature extraction algorithm widely used in Brain-Computer Interface (BCI) Systems for detecting Event-Related Potentials (ERPs) in multi-channel magneto/electroencephalography (MEG/EEG) time series data. In this article, we develop and apply a CSP algorithm to the problem of identifying whether a given epoch of multi-detector Gravitational Wave (GW) strains contains coalescenses. Paired with Signal Processing techniques and a Logistic Regression classifier, we find that our pipeline is correctly able to detect 76 out of 82 confident events from Gravitational Wave Transient Catalog, using H1 and L1 strains, with a classification score of $93.72 \pm 0.04\%$ using $10 \times 5$ cross validation. The false negative events were: GW170817-v3, GW191219 163120-v1, GW200115 042309-v2, GW200210 092254-v1, GW200220 061928-v1, and GW200322 091133-v1.
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Submitted 11 January, 2022;
originally announced January 2022.
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Adjustable propagating plasmons in $α-\mathcal{T}_3$ lattice-based armchair nanoribbons
Authors:
Andrii Iurov,
Liubov Zhemchuzhna,
Paula Fekete,
Godfrey Gumbs,
Danhong Huang,
Farhana Anwar,
Dipendra Dahal,
Nicholas Weekes
Abstract:
We have obtained and analyzed the electronic states, polarization function and the plasmon excitations for $α- \mathcal{T}_3$-based nanoribbons with armchair termination. The calculated plasmon dispersions strongly depend on the number of the atomic rows across the ribbon, and the presence of the energy gap between the valence and conduction bands which is also determined by the nanoribbon geometr…
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We have obtained and analyzed the electronic states, polarization function and the plasmon excitations for $α- \mathcal{T}_3$-based nanoribbons with armchair termination. The calculated plasmon dispersions strongly depend on the number of the atomic rows across the ribbon, and the presence of the energy gap between the valence and conduction bands which is also determined by the nanoribbon geometry. The bandgap was proven to have the strongest effect on both the plasmon dispersions and their Landau dam**. We have also demonstrated that for a small electron do** the plasmon dispersions do not depend on the relative hop** parameter $α$ of the considered $α- \mathcal{T}_3$ material in the long-wave limit and investigated the conditions when $α$ becomes an important factor which strongly affects the plasmons. We believe that our new uncovered electronic and collective properties of nano-size $α- \mathcal{T}_3$ribbons will find their applications in the field of modern electronics and nanodevices.
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Submitted 20 June, 2021;
originally announced June 2021.
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On the origin and the structure of the first sharp diffraction peak of amorphous silicon
Authors:
Devilal Dahal,
Hiroka Warren,
Parthapratim Biswas
Abstract:
The structure of the first sharp diffraction peak (FSDP) of amorphous silicon (${\it a}$-Si) near 2 Angstrom$^{-1}$ is addressed with particular emphasis on the position, intensity, and width of the diffraction curve. By studying a number of continuous random network (CRN) models of ${\it a}$-Si, it is shown that the position and the intensity of the FSDP are primarily determined by radial atomic…
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The structure of the first sharp diffraction peak (FSDP) of amorphous silicon (${\it a}$-Si) near 2 Angstrom$^{-1}$ is addressed with particular emphasis on the position, intensity, and width of the diffraction curve. By studying a number of continuous random network (CRN) models of ${\it a}$-Si, it is shown that the position and the intensity of the FSDP are primarily determined by radial atomic correlations in the amorphous network on the length scale of 15 Angstroms. A shell-by-shell analysis of the contribution from different radial shells reveals that the key contributions to the FSDP originate from the second and fourth radial shells in the network, which are accompanied by a background contribution from the first shell and small residual corrections from the distant radial shells. The results from numerical calculations are complemented by a phenomenological discussion of the relationship between the peaks in the structure factor in the wavevector space and the reduced pair-correlation function in the real space. An approximate functional relation between the position of the FSDP and the average second-neighbor distance of Si atoms in the amorphous network is derived, which is corroborated by numerical calculations.
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Submitted 1 January, 2021; v1 submitted 30 October, 2020;
originally announced October 2020.
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Magnetoplasmons for the $α$-T$_3$ model with filled Landau levels
Authors:
Antonios Balassis,
Dipendra Dahal,
Godfrey Gumbs,
Andrii Iurov,
Danhong Huang,
Oleksiy Roslyak
Abstract:
Using the $α$-T$_3$ model, we carried out analytical and numerical calculations for the static and dynamic polarization functions in the presence of a perpendicular magnetic field. These results were employed to determine the longitudinal dielectric function and the magnetoplasmon dispersion relation. The magnetic field splits the continuous valence, conduction and flat energy subband into discret…
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Using the $α$-T$_3$ model, we carried out analytical and numerical calculations for the static and dynamic polarization functions in the presence of a perpendicular magnetic field. These results were employed to determine the longitudinal dielectric function and the magnetoplasmon dispersion relation. The magnetic field splits the continuous valence, conduction and flat energy subband into discrete Landau levels which present significant effects on the polarization function and magnetoplasmon dispersion. We present results for a doped layer in the integer quantum Hall regime for fixed hop** parameter $α$ and various magnetic fields as well as chosen magnetic field and different $α$ in the random phase approximation.
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Submitted 25 July, 2020; v1 submitted 10 May, 2019;
originally announced May 2019.
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Quantum-statistical theory for laser-tuned transport and optical conductivities of dressed electrons in $α-\mc{T}_3$ materials
Authors:
Andrii Iurov,
Liubov Zhemchuzhna,
Dipendra Dahal,
Godfrey Gumbs,
Danhong Huang
Abstract:
In the presence of external off-resonance and circularly-polarized irradiation, we have derived a many-body formalism and performed a detailed numerical analysis for both the conduction and optical currents in $α-\mc{T}_3$ lattices. The calculated complex many-body dielectric function, as well as conductivities of displacement and transport currents, display strong dependence on the lattice-struct…
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In the presence of external off-resonance and circularly-polarized irradiation, we have derived a many-body formalism and performed a detailed numerical analysis for both the conduction and optical currents in $α-\mc{T}_3$ lattices. The calculated complex many-body dielectric function, as well as conductivities of displacement and transport currents, display strong dependence on the lattice-structure parameter $α$, especially approaching the graphene limit with $α\to 0$. Unique features in dispersion and dam** of plasmon modes are observed with different $α$ values, which are further accompanied by a reduced transport conductivity under irradiation. The discovery in this paper can be used for designing novel multi-functional nanoelectronic and nanoplasmonic devices.
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Submitted 19 August, 2019; v1 submitted 5 May, 2019;
originally announced May 2019.
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Polarizability and impurity screening for phosphorene
Authors:
Po Hsin Shih,
Thi Nga Do,
Godfrey Gumbs,
Dipendra Dahal
Abstract:
Using a tight-binding Hamiltonian for phosphorene, we have calculated the real part of the polarizability and the corresponding dielectric function, Re$[ε(\textbf{q},ω)]$, at zero temperature (T = 0) with free carrier density $10^{13}$/ $cm^2$. We present results showing the real part of dielectric function in different directions of the transferred momentum $\bf{q}$. When $q$ is larger than a par…
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Using a tight-binding Hamiltonian for phosphorene, we have calculated the real part of the polarizability and the corresponding dielectric function, Re$[ε(\textbf{q},ω)]$, at zero temperature (T = 0) with free carrier density $10^{13}$/ $cm^2$. We present results showing the real part of dielectric function in different directions of the transferred momentum $\bf{q}$. When $q$ is larger than a particular value which is twice the Fermi momentum $k_F$, Re$[ε(\textbf{q},ω)]$ becomes strongly dependent on the direction of $\bf{q}$. We also discuss the case at room temperature (T = 300K). These results which are similar to those previously reported by other authors are then employed to determine the static shielding of an impurity in the vicinity of phosphorene.
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Submitted 8 September, 2018;
originally announced September 2018.
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Role played by strain on Plasmons, screening and energy loss in Graphene/substrate contacts
Authors:
Dipendra Dahal,
Godfrey Gumbs,
Danhong Huang
Abstract:
The combined effect due to mechanical strain, coupling to the plasmons in a doped conducting substrate, the plasmon-phonon scattering in conjunction with the role played by encapsulation of a secondary two-dimensional (2D) layer is investigated both theoretically and numerically. The calculations are based on the random-phase approximation (RPA) for the surface response function which yields the p…
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The combined effect due to mechanical strain, coupling to the plasmons in a doped conducting substrate, the plasmon-phonon scattering in conjunction with the role played by encapsulation of a secondary two-dimensional (2D) layer is investigated both theoretically and numerically. The calculations are based on the random-phase approximation (RPA) for the surface response function which yields the plasmon dispersion equation that is applicable in the presence or absence of an applied uniaxial strain. We present results showing the dependence of the frequency of the charge density oscillations on the strain modulus and direction of the wave vector in the Brillouin zone. The shielding of a dilute distribution of charges as well as the rate of loss of energy for im**ing charges is investigated for this hybrid layered structure.
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Submitted 21 May, 2018; v1 submitted 9 May, 2018;
originally announced May 2018.
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Adatom Do**-Enriched Geometric and Electronic Properties of Pristine Graphene: a Method to Modify the Band Gap
Authors:
Ngoc Thanh Thuy Tran,
Dipendra Dahal,
Godfrey Gumbs,
Ming-Fa Lin
Abstract:
We have investigated the way in which the concentration and distribution of adatoms affect the geometric and electronic properties of graphene. Our calculations were based on the use of first principle under the density functional theory which reveal various types of $π$-bonding. The energy band structure of this doped graphene material may be explored experimentally by employing angle-resolved ph…
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We have investigated the way in which the concentration and distribution of adatoms affect the geometric and electronic properties of graphene. Our calculations were based on the use of first principle under the density functional theory which reveal various types of $π$-bonding. The energy band structure of this doped graphene material may be explored experimentally by employing angle-resolved photo-emission spectroscopy (ARPES) for electronic band structure measurements and scanning tunneling spectroscopy (STS) for the density-of-states (DOS) both of which have been calculated and reported in this paper. Our calculations show that such adatom do** is responsible for the destruction or appearance of the Dirac cone structure.
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Submitted 7 March, 2017;
originally announced March 2017.
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Effect of Energy Band Gap in Graphene on Negative Refraction through the Veselago Lens and Electron Conductance
Authors:
Dipendra Dahal,
Godfrey Gumbs
Abstract:
A remarkable property of intrinsic graphene is that upon do**, electrons and holes travel through the monolayer thick material with constant velocity which does not depend on energy up to about $0.3$ eV (Dirac fermions), as though the electrons and holes are massless particles and antiparticles which move at the Fermi velocity $v_F$. Consequently, there is Klein tunneling at a $p-n$ junction, in…
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A remarkable property of intrinsic graphene is that upon do**, electrons and holes travel through the monolayer thick material with constant velocity which does not depend on energy up to about $0.3$ eV (Dirac fermions), as though the electrons and holes are massless particles and antiparticles which move at the Fermi velocity $v_F$. Consequently, there is Klein tunneling at a $p-n$ junction, in which there is no backscattering at normal incidence of massless Dirac fermions. However, this process yielding perfect transmission at normal incidence is expected to be affected when the group velocity of the charge carriers is energy dependent and there is non-zero effective mass for the target particle. We investigate how away from normal incidence the combined effect of incident electron energy $ε$ and band gap parameter $Δ$ can determine whether a $p-n$ junction would allow focusing of an electron beam by behaving like a Veselago lens with negative refractive index. We demonstrate that there is a specific region in $ε-Δ$ space where the index of refraction is negative, i.e., where monolayer graphene behaves as a metamaterial. Outside this region, the refractive index may be positive or there may be no refraction at all. We compute the ballistic conductance across a $p-n$ junction as a function of $Δ$ and $ε$ and compare our results with those for a single electrostatic potential barrier and multiple barriers.
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Submitted 13 July, 2016;
originally announced July 2016.
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Effect of Temperature and Do** on Plasmon Excitations for an Encapsulated Double-Layer Graphene Heterostructure
Authors:
Godfrey Gumbs,
Dipendra Dahal,
Antonios Balassis
Abstract:
We perform a comprehensive analysis of the spectrum of graphene plasmons which arise when a pair of sheets are confined between conducting materials. The associated enhanced local fields may be employed in the manipulation of light on the nanoscale by adjusting the separation between the graphene layers, the energy band gap as well as the concentration of charge carriers in the conducting media su…
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We perform a comprehensive analysis of the spectrum of graphene plasmons which arise when a pair of sheets are confined between conducting materials. The associated enhanced local fields may be employed in the manipulation of light on the nanoscale by adjusting the separation between the graphene layers, the energy band gap as well as the concentration of charge carriers in the conducting media surrounding the two-dimensional (2D) layers. We present a theoretical formalism, based on the calculation of the surface response function, for determining the plasmon spectrum of an encapsulated pair of 2D layers and apply it to graphene. We solve the coupled equations involving the continuity of the electric potential and discontinuity of the electric field at the interfaces separating the constituents of the hybrid structure. We have compared the plasmon modes for encapsulated gapped and gapless graphene. The associated nonlocal graphene plasmon spectrum coupled to the "sandwich" system show a linear acoustic plasmon mode as well as a low-frequency mode corresponding to in-phase oscillations of the adjacent 2D charge densities. These calculations are relevant to the study of energy transfer via plasmon excitations when graphene is confined by a pair of thick conducting materials.
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Submitted 1 September, 2017; v1 submitted 19 May, 2016;
originally announced May 2016.
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Plasmon Excitations for Encapsulated Graphene
Authors:
Godfrey Gumbs,
Norman J. M. Horing,
Andrii Iurov,
Dipendra Dahal
Abstract:
We have developed an analytical formulation to calculate the plasmon dispersion relation for a two-dimensional layer which is encapsulated within a narrow spatial gap between two bulk half-space plasmas. This is based on a solution of the inverse dielectric function integral equation within the random-phase approximation (RPA). We take into account the nonlocality of the plasmon dispersion relatio…
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We have developed an analytical formulation to calculate the plasmon dispersion relation for a two-dimensional layer which is encapsulated within a narrow spatial gap between two bulk half-space plasmas. This is based on a solution of the inverse dielectric function integral equation within the random-phase approximation (RPA). We take into account the nonlocality of the plasmon dispersion relation for both gapped and gapless graphene as the sandwiched two-dimensional (2D) semiconductor plasma. The associated nonlocal graphene plasmon spectrum coupled to the "sandwich" system is exhibited in density plots, which show a linear mode and a pair of depolarization modes shifted from the bulk plasma frequency.
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Submitted 29 March, 2016; v1 submitted 6 January, 2016;
originally announced January 2016.
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Thermal smearing of the magneto-Kohn anomaly for Dirac materials and comparison with the two-dimensional electron liquid
Authors:
Godfrey Gumbs,
Antonios Balassis,
Dipendra Dahal,
M. L. Glasser
Abstract:
We compute and compare the effects due to a uniform perpendicular magnetic field as well as temperature on the static polarization functions for monolayer graphene (MLG), associated with the Dirac point, with that for the two-dimensional electron liquid (2DEL) with the use of comprehensive numerical calculations. Previous results for the 2DEL are discussed and, in particular, we point out a flaw i…
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We compute and compare the effects due to a uniform perpendicular magnetic field as well as temperature on the static polarization functions for monolayer graphene (MLG), associated with the Dirac point, with that for the two-dimensional electron liquid (2DEL) with the use of comprehensive numerical calculations. Previous results for the 2DEL are discussed and, in particular, we point out a flaw in a reported analytic derivation which was carried out to exhibit the smearing of the Fermi surface for 2DEL. The relevance of our study to the Kohn anomaly in low-dimensional structures and the Friedel oscillations for the screening of the potential for a dilute distribution of impurities is reported. Our results show substantial differences due to screening for the 2DEL and MLG which have not been given adequate attention previously.
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Submitted 28 March, 2016; v1 submitted 30 December, 2015;
originally announced December 2015.
