On the Jacquet functor of Symplectic groups
Authors:
Prem Dagar,
Mahendra Kumar Verma
Abstract:
Let $\F$ be a non-Archimedean local field.~Consider $\G_{n}:= \Sp_{2n}(\F)$ and let $\M:= \GL_l \times \G_{n-l}$ be a maximal Levi subgroup of $\G_{n}$.~This paper undertakes the computation of the Jacquet module of representations of $\G_{n}$ with respect to the maximal Levi subgroup, belonging to a particular class. Finally, we conclude that for a subclass of representations of $\G_{n},$ multipl…
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Let $\F$ be a non-Archimedean local field.~Consider $\G_{n}:= \Sp_{2n}(\F)$ and let $\M:= \GL_l \times \G_{n-l}$ be a maximal Levi subgroup of $\G_{n}$.~This paper undertakes the computation of the Jacquet module of representations of $\G_{n}$ with respect to the maximal Levi subgroup, belonging to a particular class. Finally, we conclude that for a subclass of representations of $\G_{n},$ multiplicity of the Jacquet module does not exceed 2.
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Submitted 10 May, 2024;
originally announced May 2024.
A note on Jacquet modules of general linear groups
Authors:
Prem Dagar,
Mahendra Kumar Verma
Abstract:
Let F be a non-Archimedean local field. Consider G_n:= GL_n(F) and let M:= G_l * G_{n-l} be a maximal Levi subgroup of G_n. In this article, we compute the semisimplified Jacquet module of representations of G_n with respect to the maximal Levi subgroup M, belonging to a particular category of representations. Utilizing our results, we prove that the Jacquet module is multiplicity-free for a speci…
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Let F be a non-Archimedean local field. Consider G_n:= GL_n(F) and let M:= G_l * G_{n-l} be a maximal Levi subgroup of G_n. In this article, we compute the semisimplified Jacquet module of representations of G_n with respect to the maximal Levi subgroup M, belonging to a particular category of representations. Utilizing our results, we prove that the Jacquet module is multiplicity-free for a specific subcategory of representations. Our findings are based on the Zelevinsky classification.
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Submitted 9 May, 2024;
originally announced May 2024.
Control of proton transport and hydrogenation in double-gated graphene
Authors:
J. Tong,
Y. Fu,
D. Domaretskiy,
F. Della Pia,
P. Dagar,
L. Powell,
D. Bahamon,
S. Huang,
B. Xin,
R. N. Costa Filho,
L. F. Vega,
I. V. Grigorieva,
F. M. Peeters,
A. Michaelides,
M. Lozada-Hidalgo
Abstract:
The basal plane of graphene can function as a selective barrier that is permeable to protons but impermeable to all ions and gases, stimulating its use in applications such as membranes, catalysis and isotope separation. Protons can chemically adsorb on graphene and hydrogenate it, inducing a conductor-insulator transition that has been explored intensively in graphene electronic devices. However,…
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The basal plane of graphene can function as a selective barrier that is permeable to protons but impermeable to all ions and gases, stimulating its use in applications such as membranes, catalysis and isotope separation. Protons can chemically adsorb on graphene and hydrogenate it, inducing a conductor-insulator transition that has been explored intensively in graphene electronic devices. However, both processes face energy barriers and various strategies have been proposed to accelerate proton transport, for example by introducing vacancies, incorporating catalytic metals or chemically functionalizing the lattice. However, these techniques can compromise other properties, such as ion selectivity or mechanical stability. Here we show that independent control of the electric field, E, at around 1 V nm-1, and charge-carrier density, n, at around 1 x 10^14 cm-2, in double-gated graphene allows the decoupling of proton transport from lattice hydrogenation and can thereby accelerate proton transport such that it approaches the limiting electrolyte current for our devices. Proton transport and hydrogenation can be driven selectively with precision and robustness, enabling proton-based logic and memory graphene devices that have on-off ratios spanning orders of magnitude. Our results show that field effects can accelerate and decouple electrochemical processes in double-gated 2D crystals and demonstrate the possibility of map** such processes as a function of E and n, which is a new technique for the study of 2D electrode-electrolyte interfaces.
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Submitted 25 April, 2024; v1 submitted 10 April, 2024;
originally announced April 2024.
