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Rashba-like spin textures in Graphene promoted by ferromagnet-mediated Electronic-Hybridization with heavy metal
Authors:
Beatriz Muñiz Cano,
Adrían Gudín,
Jaime Sánchez-Barriga,
Oliver J. Clark,
Alberto Anadón,
Jose Manuel Díez,
Pablo Olleros-Rodríguez,
Fernando Ajejas,
Iciar Arnay,
Matteo Jugovac,
Julien Rault,
Patrick Le Févre,
François Bertran,
Donya Mazhjoo,
Gustav Bihlmayer,
Stefan Blügel,
Rodolfo Miranda,
Julio Camarero,
Miguel Angel Valbuena,
Paolo Perna
Abstract:
Epitaxial graphene/ferromagnetic metal (Gr/FM) heterostructures deposited onto heavy metals (HM) have been proposed for the realization of novel spintronic devices because of their perpendicular magnetic anisotropy and sizeable Dzyaloshinskii-Moriya interaction (DMI), allowing for both enhanced thermal stability and stabilization of chiral spin textures. However, establishing routes towards this g…
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Epitaxial graphene/ferromagnetic metal (Gr/FM) heterostructures deposited onto heavy metals (HM) have been proposed for the realization of novel spintronic devices because of their perpendicular magnetic anisotropy and sizeable Dzyaloshinskii-Moriya interaction (DMI), allowing for both enhanced thermal stability and stabilization of chiral spin textures. However, establishing routes towards this goal requires the fundamental understanding of the microscopic origin of their unusual properties. Here, we elucidate the nature of the induced spin-orbit coupling (SOC) at Gr/Co interfaces on Ir. Through spin- and angle-resolved photoemission along with density functional theory, we show that the interaction of the HM with the C atomic layer via hybridization with the FM is the source of strong SOC in the Gr layer. Furthermore, our studies on ultrathin Co films underneath Gr reveal an energy splitting of $\sim$\,100 meV (negligible) for in-plane (out-of-plane) spin polarized Gr $π$ bands, consistent with a Rashba-SOC at the Gr/Co interface, which is either the fingerprint or the origin of the DMI. This mechanism vanishes at large Co thicknesses, where neither in-plane nor out-of-plane spin-orbit splitting is observed, indicating that Gr $π$ states are electronically decoupled from the HM. The present findings are important for future applications of Gr-based heterostructures in spintronic devices.
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Submitted 1 May, 2023; v1 submitted 9 June, 2022;
originally announced June 2022.
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Origin of the Large Perpendicular Magnetic Anisotropy in Nanometer-thick Epitaxial Graphene/Co/Heavy Metal Heterostructures
Authors:
M. Blanco-Rey,
P. Perna,
A. Gudin,
J. M. Diez,
A. Anadon Leticia de Melo Costa,
Manuel Valvidares,
Pierluigi Gargiani,
Alejandra Guedeja-Marron,
Mariona Cabero,
M. Varela,
C. Garcia-Fernandez,
M. M. Otrokov,
J. Camarero,
R. Miranda,
A. Arnau,
J. I. Cerda
Abstract:
A combination of theoretical modelling and experiments reveals the origin of the large perpendicular magnetic anisotropy (PMA) that appears in nanometer-thick epitaxial Co films intercalated between graphene (Gr) and a heavy metal (HM) substrate, as a function of the Co thickness. High quality epitaxial Gr/Co\n/HM(111) (HM=Pt,Ir) heterostructures are grown by intercalation below graphene, which ac…
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A combination of theoretical modelling and experiments reveals the origin of the large perpendicular magnetic anisotropy (PMA) that appears in nanometer-thick epitaxial Co films intercalated between graphene (Gr) and a heavy metal (HM) substrate, as a function of the Co thickness. High quality epitaxial Gr/Co\n/HM(111) (HM=Pt,Ir) heterostructures are grown by intercalation below graphene, which acts as a surfactant that kinetically stabilizes the pseudomorphic growth of highly perfect Co face-centered tetragonal ($fct$) films, with a reduced number of stacking faults as the only structural defect observable by high resolution scanning transmission electron microscopy (HR-STEM). Magneto-optic Kerr effect (MOKE) measurements show that such heterostructures present PMA up to large Co critical thicknesses of about 4~nm (20~ML) and 2~nm (10~ML) for Pt and Ir substrates, respectively, while X-ray magnetic circular dichroism (XMCD) measurements show an inverse power law of the anistropy of the orbital moment with Co thickness, reflecting its interfacial nature, that changes sign at about the same critical values. First principles calculations show that, regardless of the presence of graphene, ideal Co $fct$ films on HM buffers do not sustain PMAs beyond around 6~MLs due to the in-plane contribution of the inner bulk-like Co layers. The large experimental critical thicknesses sustaining PMA can only be retrieved by the inclusion of structural defects that promote a local $hcp$ stacking such as twin boundaries or stacking faults. Remarkably, a layer resolved analysis of the orbital momentum anisotropy reproduces its interfacial nature, and reveals that the Gr/Co interface contribution is comparable to that of the Co/Pt(Ir).
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Submitted 11 December, 2020;
originally announced December 2020.
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Direct determination of Spin-Orbit torque by using dc current-voltage characteristics
Authors:
R. Guerrero,
A. Anadon,
A. Gudin,
J. M. Diez,
P. Olleros-Rodriguez,
M. Muñoz,
R. Miranda,
J. Camarero,
P. Perna
Abstract:
Spin polarized currents are employed to efficiently manipulate the magnetization of ferromagnetic ultrathin films by exerting a torque on it. If the spin currents are generated by means of the spin-orbit interaction between a ferromagnetic and a non-magnetic layer, the effect is known as spin-orbit torque (SOT), and is quantified by measuring the effective fields produced by a charge current injec…
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Spin polarized currents are employed to efficiently manipulate the magnetization of ferromagnetic ultrathin films by exerting a torque on it. If the spin currents are generated by means of the spin-orbit interaction between a ferromagnetic and a non-magnetic layer, the effect is known as spin-orbit torque (SOT), and is quantified by measuring the effective fields produced by a charge current injected into the device. In this work, we present a new experimental technique to quantify directly the SOT based on the measurement of non-linearities of the dc current-voltage (IV) characteristics in Hall bar devices employing a simple instrumentation. Through the analysis of the IV curves, the technique provides directly the linearity of the effective fields with current, the detection of the current range in which the thermal effects can be relevant, the appearance of misalignments artefacts when the symmetry relations of SOT are not fulfilled, and the conditions for the validity of the single domain approximations, which are not considered in switching current and second harmonic generation state-of-the-art experiments. We have studied the SOT induced antidam** and field-like torques in Ta/Co/Pt asymmetric stacks with perpendicular magnetic anisotropy.
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Submitted 6 April, 2020;
originally announced April 2020.
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Experimental evidence of spin-orbit torque from metallic interfaces
Authors:
A. Anadón,
R. Guerrero,
J. A. Jover-Galtier,
A. Gudín,
J. M. Díez,
P. Olleros-Rodríguez,
R. Miranda,
J. Camarero,
P. Perna
Abstract:
Spin currents can modify the magnetic state of ferromagnetic ultrathin films through spin-orbit torque. They may be generated by means of spin-orbit interaction by either bulk or interfacial phenomena. Electrical transport measurements reveal a six-fold increase of the spin-orbit torque accompanied by a drastic reduction of the spin Hall magnetoresistance upon the introduction of a Cu interlayer i…
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Spin currents can modify the magnetic state of ferromagnetic ultrathin films through spin-orbit torque. They may be generated by means of spin-orbit interaction by either bulk or interfacial phenomena. Electrical transport measurements reveal a six-fold increase of the spin-orbit torque accompanied by a drastic reduction of the spin Hall magnetoresistance upon the introduction of a Cu interlayer in a Pt/Cu/Co/Pt structure with perpendicular magnetic anisotropy. We analyze the dependence of the spin Hall magnetoresistance with the thickness of the interlayer in the frame of a drift diffusion model that provides information on the expected spin currents and spin accumulations in the system. The results demonstrate that the major responsible of both effects is spin memory loss at the interface. The enhancement of the spin-orbit torque when introducing an interlayer opens the possibility to design more effient spintronic devices based on materials that are cheap and abundant such as copper.
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Submitted 17 March, 2020;
originally announced March 2020.
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Thermally Activated Processes for Ferromagnet Intercalation in Graphene-Heavy Metal Interfaces
Authors:
F. Ajejas,
A. Anadón,
A. Gudin,
J. M. Diez,
C. G. Ayani,
P. Olleros,
L. de Melo Costa,
C. Navío,
A. Gutierrez,
F. Calleja,
A. L. Vázquez de Parga,
R. Miranda,
J. Camarero,
P. Perna
Abstract:
The development of graphene (Gr) spintronics requires the ability to engineer epitaxial Gr heterostructures with interfaces of high quality, in which the intrinsic properties of Gr are modified through proximity with a ferromagnet to allow for efficient room temperature spin manipulation or the stabilization of new magnetic textures. These heterostructures can be prepared in a controlled way by in…
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The development of graphene (Gr) spintronics requires the ability to engineer epitaxial Gr heterostructures with interfaces of high quality, in which the intrinsic properties of Gr are modified through proximity with a ferromagnet to allow for efficient room temperature spin manipulation or the stabilization of new magnetic textures. These heterostructures can be prepared in a controlled way by intercalation through graphene of different metals. Using photoelectron spectroscopy (XPS) and Scanning Tunneling Microscopy (STM), we achieve a nanoscale control of thermal activated intercalation of homogeneous ferromagnetic (FM) layer underneath epitaxial Gr grown onto (111)-oriented heavy metal (HM) buffers deposited in turn onto insulating oxide surfaces. XPS and STM demonstrate that Co atoms evaporated on top of Gr arrange in 3D clusters, and, upon thermal annealing, penetrate through and diffuse below Gr in a 2D fashion. The complete intercalation of the metal occurs at specific temperatures depending on the type of metallic buffer. The activation energy and the optimum temperature for the intercalation processes are determined. We describe a reliable method to fabricate and characterize in-situ high quality Gr-FM/HM heterostructures enabling the realization of novel spin-orbitronic devices that exploits the extraordinary properties of Gr.
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Submitted 19 November, 2019; v1 submitted 18 November, 2019;
originally announced November 2019.
