Tracing Dirac points of topological surface states by ferromagnetic resonance
Authors:
Laura Pietanesi,
Magdalena Marganska,
Thomas Mayer,
Michael Barth,
Lin Chen,
Ji Zou,
Adrian Weindl,
Alexander Liebig,
Rebeca Díaz-Pardo,
Dhavala Suri,
Florian Schmid,
Franz J. Gießibl,
Klaus Richter,
Yaroslav Tserkovnyak,
Matthias Kronseder,
Christian H. Back
Abstract:
Ferromagnetic resonance is used to reveal features of the buried electronic band structure at interfaces between ferromagnetic metals and topological insulators. By monitoring the evolution of magnetic dam**, the application of this method to a hybrid structure consisting of a ferromagnetic layer and a 3D topological insulator reveals a clear fingerprint of the Dirac point and exhibits additiona…
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Ferromagnetic resonance is used to reveal features of the buried electronic band structure at interfaces between ferromagnetic metals and topological insulators. By monitoring the evolution of magnetic dam**, the application of this method to a hybrid structure consisting of a ferromagnetic layer and a 3D topological insulator reveals a clear fingerprint of the Dirac point and exhibits additional features of the interfacial band structure not otherwise observable. The underlying spin-pum** mechanism is discussed in the framework of dissipation of angular momentum by topological surface states (TSSs). Tuning of the Fermi level within the TSS was verified both by varying the stoichiometry of the topological insulator layer and by electrostatic backgating and the dam** values obtained in both cases show a remarkable agreement. The high energy resolution of this method additionally allows us to resolve the energetic shift of the local Dirac points generated by local variations of the electrostatic potential. Calculations based on the chiral tunneling process naturally occurring in TSS agree well with the experimental results.
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Submitted 7 March, 2024; v1 submitted 6 March, 2024;
originally announced March 2024.
Transport properties of band engineered p-n heterostructures of epitaxial Bi$_2$Se$_3$/(Bi$_{1-x}$Sb$_x$)$_2$(Te$_{1-y}$Se$_y$)$_3$ topological insulators
Authors:
T. Mayer,
H. Werner,
F. Schmid,
R. Diaz-Pardo,
J. Fujii,
I. Vobornik,
C. H. Back,
M. Kronseder,
D. Bougeard
Abstract:
The challenge of parasitic bulk do** in Bi-based 3D topological insulator materials is still omnipresent, especially when preparing samples by molecular beam epitaxy (MBE). Here, we present a heterostructure approach for epitaxial BSTS growth. A thin n-type Bi$_2$Se$_3$ (BS) layer is used as an epitaxial and electrostatic seed which drastically improves the crystalline and electronic quality and…
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The challenge of parasitic bulk do** in Bi-based 3D topological insulator materials is still omnipresent, especially when preparing samples by molecular beam epitaxy (MBE). Here, we present a heterostructure approach for epitaxial BSTS growth. A thin n-type Bi$_2$Se$_3$ (BS) layer is used as an epitaxial and electrostatic seed which drastically improves the crystalline and electronic quality and reproducibility of the sample properties. In heterostructures of BS with p-type (Bi$_{1-x}$Sb$_x$)$_2$(Te$_{1-y}$Se$_y$)$_3$ (BSTS) we demonstrate intrinsic band bending effects to tune the electronic properties solely by adjusting the thickness of the respective layer. The analysis of weak anti-localization features in the magnetoconductance indicates a separation of top and bottom conduction layers with increasing BSTS thickness. By temperature- and gate-dependent transport measurements, we show that the thin BS seed layer can be completely depleted within the heterostructure and demonstrate electrostatic tuning of the bands via a back-gate throughout the whole sample thickness.
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Submitted 20 January, 2021; v1 submitted 13 October, 2020;
originally announced October 2020.
