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From many-body ab initio to effective excitonic models: a versatile map** approach including environmental embedding effects
Authors:
Mauricio Rodríguez-Mayorga,
Xavier Blase,
Ivan Duchemin,
Gabriele D'Avino
Abstract:
We present an original multi-state projective diabatization scheme based on the Green's function formalism that allows the systematic map** of many-body ab initio calculations onto effective excitonic models. This method inherits the ability of the Bethe-Salpeter equation to describe Frenkel molecular excitons and intermolecular charge-transfer states equally well, as well as the possibility for…
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We present an original multi-state projective diabatization scheme based on the Green's function formalism that allows the systematic map** of many-body ab initio calculations onto effective excitonic models. This method inherits the ability of the Bethe-Salpeter equation to describe Frenkel molecular excitons and intermolecular charge-transfer states equally well, as well as the possibility for an effective description of environmental effects in a QM/MM framework. The latter is found to be a crucial element in order to obtain accurate model parameters for condensed phases and to ensure their transferability to excitonic models for extended systems. The method is presented through a series of examples illustrating its quality, robustness, and internal consistency.
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Submitted 11 June, 2024;
originally announced June 2024.
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Microfluidic pressure-driven flow of a pair of deformable particles suspended in Newtonian and viscoelastic media: A numerical study
Authors:
Giancarlo Esposito,
Gaetano D'Avino,
Massimiliano Maria Villone
Abstract:
The manipulation and control of microparticles through non-intrusive methods is pivotal in biomedical applications such as cell sorting and cell focusing. Although several experimental and numerical studies have been dedicated to single suspended particles or clusters of rigid spheres, analogous cases with deformable particles have not been as thoroughly studied, especially when the suspending liq…
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The manipulation and control of microparticles through non-intrusive methods is pivotal in biomedical applications such as cell sorting and cell focusing. Although several experimental and numerical studies have been dedicated to single suspended particles or clusters of rigid spheres, analogous cases with deformable particles have not been as thoroughly studied, especially when the suspending liquid exhibits relevant viscoelastic properties. With the goal of expanding the current knowledge concerning these systems, we perform a computational study on the hydrodynamic interactions between two neutrally buoyant initially spherical elastic particles suspended in Newtonian and shear-thinning viscoelastic matrices subjected to pressure-driven flow in a cylindrical microchannel. Due to the well-known focusing mechanism induced by both particle deformability and fluid elasticity, the two particles are assumed to flow at the axis of the tube. The rheological behavior of the viscoelastic continuous phase is modelled via the Giesekus constitutive equation, whereas the particles are assumed to behave as Neo-Hookean solids. The problem is tackled by employing a mixed finite element method. The effects of particle deformability, fluid elasticity, confinement ratio, and initial interparticle separation distance on the pair dynamics are investigated. The main outcome of this study is a quantitative indication of the flow conditions and spatial configurations (initial distances) under which the particles will spontaneously form organized structures. Such results are helpful to design efficient microfluidic devices with the aim of promoting particle ordering.
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Submitted 19 December, 2023;
originally announced December 2023.
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On the Role of Charge Transfer Excitations in Non-Fullerene Acceptors for Organic Photovoltaics
Authors:
Samuele Giannini,
Daniel J. C. Sowood,
Jesus Cerda,
Siebe Frederix,
Jeannine Grune,
Giacomo Londi,
Thomas Marsh,
Pratyush Ghosh,
Ivan Duchemin,
Neil C. Greenham,
Koen Vandewal,
Gabriele D'Avino,
Alexander J. Gillett,
David Beljonne
Abstract:
Through the development of new non-fullerene electron acceptor (NFA) materials, such as Y6 and its molecular derivatives, the power conversion efficiencies of organic photovoltaics (OPVs) have now exceeded 19%. However, despite this rapid progress, our fundamental understanding of the unique optical and electronic properties of these Y-series NFAs is lacking, and this currently limits progress in…
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Through the development of new non-fullerene electron acceptor (NFA) materials, such as Y6 and its molecular derivatives, the power conversion efficiencies of organic photovoltaics (OPVs) have now exceeded 19%. However, despite this rapid progress, our fundamental understanding of the unique optical and electronic properties of these Y-series NFAs is lacking, and this currently limits progress in material design. In this work, we provide a detailed computational-experimental characterisation of the archetypal NFA, Y6. To explain the significant broadening and red shift of the absorption spectrum observed when moving from the solution phase to the solid state, we first rule out more typical causes, such as J-aggregation. Instead, by considering the role of charge transfer (CT) excitations and their mixing with Frenkel exciton (FE) states, we can computationally reproduce the experimental absorption spectra of Y6 with excellent accuracy. Using transient absorption spectroscopy, we provide evidence for this dense manifold of FE-CT hybrid electronic excitations in Y6 through the prominent sub-picosecond relaxation events following supra band gap excitation. Furthermore, through sub band gap excitation, we also find states with polaronic character in Y6 that are in a dynamic equilibrium with the FE-CT hybrid states. Magnetic resonance spectroscopies reveal that these polaronic states are polaron pairs, most likely located on neighbouring Y6 molecules, not free charge carriers, as has been previously suggested. Thus, this new understanding of how the solid-state packing motif directly controls the optical and electronic properties of Y-series NFAs opens the door to intelligently design NFA materials to further increase OPV performance.
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Submitted 2 March, 2024; v1 submitted 7 December, 2023;
originally announced December 2023.
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Electronic Polarization Effects in Core-Level Spectroscopy
Authors:
Iskander Mukatayev,
Gabriele D'Avino,
Benoit Sklenard,
Valerio Olevano,
**g Li
Abstract:
In X-ray photoelectron spectroscopy (XPS), the injected hole interacts with the electronic polarization cloud induced by the hole itself, ultimately resulting in a lower binding energy. Such polarization effect can shift the core-level energy by more than 1 eV, as shown here by embedded many-body perturbation theory for the paradigmatic case of noble gas clusters made of Ar, Kr, or Xe. The polariz…
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In X-ray photoelectron spectroscopy (XPS), the injected hole interacts with the electronic polarization cloud induced by the hole itself, ultimately resulting in a lower binding energy. Such polarization effect can shift the core-level energy by more than 1 eV, as shown here by embedded many-body perturbation theory for the paradigmatic case of noble gas clusters made of Ar, Kr, or Xe. The polarization energy is almost identical for the different core-orbitals of a given atom, but it strongly depends on the position of the ionized atom in the cluster. An analytical formula is derived from classical continuum electrostatics, providing an effective and accurate description of polarization effects, which permits to achieve an excellent agreement with available experiments on noble gas clusters at a modest computational cost. Electronic polarization provides a crucial contribution to core levels absolute energies and chemical shifts.
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Submitted 22 June, 2023;
originally announced June 2023.
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Sedimentation and migration dynamics of a spherical particle in an elastoviscoplastic fluid near a wall
Authors:
Alie Abbasi Yazdi,
Gaetano D'Avino
Abstract:
The sedimentation of a spherical particle in an elastoviscoplastic fluid in proximity of a flat wall is investigated by direct numerical simulations. The governing equations under inertialess conditions are solved by the finite element method with an Arbitrary Lagrangian-Eulerian formulation to manage the particle motion. The fluid is modeled with the Giesekus constitutive equation modified as pro…
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The sedimentation of a spherical particle in an elastoviscoplastic fluid in proximity of a flat wall is investigated by direct numerical simulations. The governing equations under inertialess conditions are solved by the finite element method with an Arbitrary Lagrangian-Eulerian formulation to manage the particle motion. The fluid is modeled with the Giesekus constitutive equation modified as proposed by Saramito (2007).
The sedimentation, migration, and angular velocities are computed as a function of the particle-wall distance for various Weissenberg and Bingham numbers. The presence of a yield stress reduces the settling velocity and reverses the migration direction as compared to the purely viscoelastic case. The effect of the confining wall on the yielded and unyielded regions around the particle is investigated. The reversed particle migration phenomenon observed in the elastoviscoplastic fluid is attributed to the different shear rate distribution around the particle due to the presence of the yielded region. The negative wake behind the particle is discussed and related to the axial component of the viscoelastic stress.
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Submitted 9 February, 2023;
originally announced February 2023.
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Structural order promotes efficient separation of delocalized charges at molecular heterojunctions
Authors:
Xiangkun Jia,
Lorenzo Soprani,
Giacomo Londi,
Seyed Mehrdad Hosseini,
Felix Talnack,
Stefan Mannsfeld,
Safa Shoaee,
Dieter Neher,
Sebastian Reineke,
Luca Muccioli,
Gabriele D'Avino,
Koen Vandewal,
David Beljonne,
Donato Spoltore X. Jia,
S. Reineke,
L. Soprani,
L. Muccioli,
G. Londi,
D. Beljonne,
S. M. Hosseini,
S. Shoaee,
D. Neher,
F. Talnack,
S. Mannsfeld,
G. D'Avino
, et al. (2 additional authors not shown)
Abstract:
The energetic landscape at the interface between electron donating and accepting molecular materials favors efficient conversion of intermolecular charge-transfer states (CTS) into free charge carriers in high-performance organic solar cells. Here, we elucidate how interfacial energetics, charge generation and radiative recombination are affected by structural ordering. We experimentally determine…
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The energetic landscape at the interface between electron donating and accepting molecular materials favors efficient conversion of intermolecular charge-transfer states (CTS) into free charge carriers in high-performance organic solar cells. Here, we elucidate how interfacial energetics, charge generation and radiative recombination are affected by structural ordering. We experimentally determine the CTS binding energy of a series of model, small molecule donor-acceptor blends, where the used acceptors (B2PYMPM, B3PYMPM and B4PYMPM) differ only in the nitrogen position of their lateral pyridine rings. We find that the formation of an ordered, face-on molecular packing in B4PYMPM is beneficial to efficient, field-independent charge separation, leading to fill factors over 70% in photovoltaic devices. This is rationalized by a comprehensive computational protocol showing that, compared to the more amorphous and isotropically oriented B2PYMPM, the higher order of the B4PYMPM molecules provides more delocalized CTS. Furthermore, we find no correlation between the quantum efficiency of radiative free charge carrier recombination and the bound or unbound nature of the CTS. This work highlights the importance of structural ordering at donor-acceptor interfaces for efficient free carrier generation and shows that more ordering and less bound CT states do not preclude efficient radiative recombination.
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Submitted 10 November, 2022;
originally announced November 2022.
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Universal polarization energies for defects in monolayer, surface and bulk hexagonal boron nitride : A finite-size fragments GW approach
Authors:
David Amblard,
Gabriele D'Avino,
Ivan Duchemin,
Xavier Blase
Abstract:
We study defect energy levels in hexagonal boron-nitride with varying number of layers using a fragment many-body $GW$ formalism, taking as examples the paradigmatic carbon-dimer and $C_BV_N$ defects. We show that a single layer can be fragmented in polarizable finite-size areas reproducing faithfully the effect of the dielectric environment, dramatically facilitating the study at the many-body le…
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We study defect energy levels in hexagonal boron-nitride with varying number of layers using a fragment many-body $GW$ formalism, taking as examples the paradigmatic carbon-dimer and $C_BV_N$ defects. We show that a single layer can be fragmented in polarizable finite-size areas reproducing faithfully the effect of the dielectric environment, dramatically facilitating the study at the many-body level of point defects in the dilute limit. The evolution of defect energy levels from the monolayer to a $n$-layer system due to increased screening, labeled polarization energies, follow a simple $({ΔP}/n + P_{\infty})$ behavior. The coefficients $ΔP$ and $P_{\infty}$ are found to be close-to-universal, with opposite signs for holes and electrons, characterizing mainly the host and the position of the defect (surface or bulk), but hardly the defect type. Our results rationalize the evolution of defect energy levels with layers number, allowing to safely extrapolate results obtained for the monolayer to few-layers, surface or bulk \textit{h}-BN. The present many-body fragment approach further opens the door to studying disordered 2D layers.
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Submitted 11 October, 2022; v1 submitted 25 April, 2022;
originally announced April 2022.
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Do**-induced dielectric catastrophe prompts free-carrier release in organic semiconductors
Authors:
Massimiliano Comin,
Simone Fratini,
Xavier Blase,
Gabriele D'Avino
Abstract:
The control over material properties attainable through molecular do** is essential to many technological applications of organic semiconductors, such as OLED or thermoelectrics. These excitonic semiconductors typically reach the degenerate limit only at impurity concentrations of 5-10\%, a phenomenon that has been put in relation to the strong Coulomb binding between charge carriers and ionized…
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The control over material properties attainable through molecular do** is essential to many technological applications of organic semiconductors, such as OLED or thermoelectrics. These excitonic semiconductors typically reach the degenerate limit only at impurity concentrations of 5-10\%, a phenomenon that has been put in relation to the strong Coulomb binding between charge carriers and ionized dopants, and whose comprehension remained elusive so far. This study proposes a general mechanism for the release of carriers at finite do** in terms of collective screening phenomena. A multiscale model for the dielectric properties of doped organic semiconductor is set up by combining first principles and microelectrostatic calculations. Our results predict a large nonlinear enhancement of the dielectric constant (ten-fold at 8\% load) as the system approaches a dielectric instability (catastrophe) upon increasing do**. This can be attributed to the presence of highly polarizable host-dopant complexes, plus a nontrivial leading contribution from dipolar interactions in the disordered and heterogeneous system. The enhanced screening in the material drastically reduces the (free) energy barriers for electron-hole separation, rationalizing the possibility for thermal charge release. The proposed mechanism is consistent with conductivity data and sets the basis for achieving higher conductivities at lower do** loads.
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Submitted 13 July, 2021;
originally announced July 2021.
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Analysis of external and internal disorder to understand band-like transport in n-type organic semiconductors
Authors:
Marc-Antoine Stoeckel,
Yoann Olivier,
Marco Gobbi,
Dmytro Dudenko,
Vincent Lemaur,
Mohamed Zbiri,
Anne A. Y. Guilbert,
Gabriele D'Avino,
Fabiola Liscio,
Andrea Migliori,
Luca Ortolani,
Nicola Demitri,
Xin **,
Young-Gyun Jeong,
Andrea Liscio,
Marco-Vittorio Nardi,
Luca Pasquali,
Luca Razzari,
David Beljonne,
Paolo Samori,
Emanuele Orgiu
Abstract:
Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both internal and external (i.e. related to the interactions with the dielectric layer), especially for n-type materials. Internal dynamic disorder stems from large thermal fluctuations both in intermolecular transfer integrals and (molecular) site energies in weakly interacting van der Waals…
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Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both internal and external (i.e. related to the interactions with the dielectric layer), especially for n-type materials. Internal dynamic disorder stems from large thermal fluctuations both in intermolecular transfer integrals and (molecular) site energies in weakly interacting van der Waals solids and sources transient localization of the charge carriers. The molecular vibrations that drive transient localization typically operate at low-frequency (< a-few-hundred cm-1), which renders it difficult to assess them experimentally. Hitherto, this has prevented the identification of clear molecular design rules to control and reduce dynamic disorder. In addition, the disorder can also be external, being controlled by the gate insulator dielectric properties. Here we report on a comprehensive study of charge transport in two closely related n-type molecular organic semiconductors using a combination of temperature-dependent inelastic neutron scattering and photoelectron spectroscopy corroborated by electrical measurements, theory and simulations. We provide unambiguous evidence that ad hoc molecular design enables to free the electron charge carriers from both internal and external disorder to ultimately reach band-like electron transport.
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Submitted 11 May, 2021;
originally announced May 2021.
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Structural and dynamic disorder, not ionic trap**, controls charge transport in highly doped conducting polymers
Authors:
Ian E. Jacobs,
Gabriele D'Avino,
Vincent Lemaur,
Yue Lin,
Yuxuan Huang,
Chen Chen,
Thomas Harrelson,
William Wood,
Leszek J. Spalek,
Tarig Mustafa,
Christopher A. O'Keefe,
Xinglong Ren,
Dimitrios Simatos,
Dion Tjhe,
Martin Statz,
Joseph Strzalka,
**-Kyun Lee,
Iain McCulloch,
Simone Fratini,
David Beljonne,
Henning Sirringhaus
Abstract:
Doped organic semiconductors are critical to emerging device applications, including thermoelectrics, bioelectronics, and neuromorphic computing devices. It is commonly assumed that low conductivities in these materials result primarily from charge trap** by the Coulomb potentials of the dopant counter-ions. Here, we present a combined experimental and theoretical study rebutting this belief. Us…
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Doped organic semiconductors are critical to emerging device applications, including thermoelectrics, bioelectronics, and neuromorphic computing devices. It is commonly assumed that low conductivities in these materials result primarily from charge trap** by the Coulomb potentials of the dopant counter-ions. Here, we present a combined experimental and theoretical study rebutting this belief. Using a newly developed do** technique, we find the conductivity of several classes of high-mobility conjugated polymers to be strongly correlated with paracrystalline disorder but poorly correlated with ionic size, suggesting that Coulomb traps do not limit transport. A general model for interacting electrons in highly doped polymers is proposed and carefully parameterized against atomistic calculations, enabling the calculation of electrical conductivity within the framework of transient localisation theory. Theoretical calculations are in excellent agreement with experimental data, providing insights into the disordered-limited nature of charge transport and suggesting new strategies to further improve conductivities.
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Submitted 23 September, 2021; v1 submitted 5 January, 2021;
originally announced January 2021.
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Intriguing relaxor ferroelectricity in a polar CT crystal at the neutral-ionic interface
Authors:
J. K. H. Fischer,
G. D'Avino,
M. Masino,
F. Mezzadri,
P. Lunkenheimer,
Z. G. Soos,
A. Girlando
Abstract:
We investigated the mixed-stack charge-transfer crystal, N,N'-dimethylphenazine-TCNQ (M$_2$P-TCNQ), which is polar at room temperature and just at the neutral-to-ionic interface (ionicity $ρ\approx 0.5$). We detect the typical dielectric signature of a relaxor ferroelectric and an asymmetric positive-up-negative-down behavior. While relaxor ferroelectricity is usually ascribed to disorder in the c…
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We investigated the mixed-stack charge-transfer crystal, N,N'-dimethylphenazine-TCNQ (M$_2$P-TCNQ), which is polar at room temperature and just at the neutral-to-ionic interface (ionicity $ρ\approx 0.5$). We detect the typical dielectric signature of a relaxor ferroelectric and an asymmetric positive-up-negative-down behavior. While relaxor ferroelectricity is usually ascribed to disorder in the crystal, we find no evidence for structural disorder in the investigated crystals. To elucidate the origin of M$_2$P-TCNQ's dielectric properties we perform parallel structural and spectroscopic measurements, associated with theoretical modeling and quantum-mechanical calculations. Our combined effort points to a highly polarizable electronic system that is strongly coupled to lattice vibrations. The found indications for polarization reversal imply flip** of the bent conformation of the M$_2$P molecule with an associated energy barrier of a few tens of an eV, broadly consistent with an Arrhenius fit of the dielectric relaxation times. While the polarization is mostly of electronic origin, its possible reversal implies slow collective motions that are affected by solid-state intermolecular interactions.
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Submitted 3 September, 2020;
originally announced September 2020.
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Chasing the killer phonon mode for the rational design of low disorder, high mobility molecular semiconductors
Authors:
Guillaume Schweicher,
Gabriele D'Avino,
Michael T. Ruggiero,
David J. Harkin,
Katharina Broch,
Deepak Venkateshvaran,
Guoming Liu,
Audrey Richard,
Christian Ruzie,
Jeff Armstrong,
Alan R. Kennedy,
Kenneth Shankland,
Kazuo Takimiya,
Yves H. Geerts,
J. Axel Zeitler,
Simone Fratini,
Henning Sirringhaus
Abstract:
Molecular vibrations play a critical role in the charge transport properties of weakly van der Waals bonded organic semiconductors. To understand which specific phonon modes contribute most strongly to the electron-phonon coupling and ensuing thermal energetic disorder in some of the most widely studied high mobility molecular semiconductors, state-of-the-art quantum mechanical simulations of the…
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Molecular vibrations play a critical role in the charge transport properties of weakly van der Waals bonded organic semiconductors. To understand which specific phonon modes contribute most strongly to the electron-phonon coupling and ensuing thermal energetic disorder in some of the most widely studied high mobility molecular semiconductors, state-of-the-art quantum mechanical simulations of the vibrational modes and the ensuing electron phonon coupling constants are combined with experimental measurements of the low-frequency vibrations using inelastic neutron scattering and terahertz time-domain spectroscopy. In this way, the long-axis sliding motion is identified as a killer phonon mode, which in some molecules contributes more than 80% to the total thermal disorder. Based on this insight, a way to rationalize mobility trends between different materials and derive important molecular design guidelines for new high mobility molecular semiconductors is suggested.
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Submitted 12 September, 2019; v1 submitted 26 March, 2019;
originally announced March 2019.
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Accurate description of charged excitations in molecular solids from embedded many-body perturbation theory
Authors:
**g Li,
Gabriele D'Avino,
Ivan Duchemin,
David Beljonne,
Xavier Blase
Abstract:
We present a novel hybrid quantum/classical (QM/MM) approach to the calculation of charged excitations in molecular solids based on the many-body Green's function $GW$ formalism. Molecules described at the $GW$ level are embedded into the crystalline environment modeled with an accurate classical polarizable scheme. This allows the calculation of electron addition and removal energies in the bulk…
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We present a novel hybrid quantum/classical (QM/MM) approach to the calculation of charged excitations in molecular solids based on the many-body Green's function $GW$ formalism. Molecules described at the $GW$ level are embedded into the crystalline environment modeled with an accurate classical polarizable scheme. This allows the calculation of electron addition and removal energies in the bulk and at crystal surfaces where charged excitations are probed in photoelectron experiments. By considering the paradigmatic case of pentacene and perfluoropentacene crystals, we discuss the different contributions from intermolecular interactions to electronic energy levels, distinguishing between polarization, which is accounted for combining quantum and classical polarizabilities, and crystal field effects, that can impact energy levels by up to $\pm0.6$ eV. After introducing band dispersion, we achieve quantitative agreement (within 0.2 eV) on the ionization potential and electron affinity measured at pentacene and perfluoropentacene crystal surfaces characterized by standing molecules.
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Submitted 5 January, 2018;
originally announced January 2018.
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Correlated electron-hole mechanism for molecular do** in organic semiconductors
Authors:
**g Li,
Gabriele D'Avino,
Anton Pershin,
Denis Jacquemin,
Ivan Duchemin,
David Beljonne,
Xavier Blase
Abstract:
The electronic and optical properties of the paradigmatic F4TCNQ-doped pentacene in the low-do** limit are investigated by a combination of state-of-the-art many-body \emph{ab initio} methods accounting for environmental screening effects, and a carefully parametrized model Hamiltonian. We demonstrate that while the acceptor level lies very deep in the gap, the inclusion of electron-hole interac…
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The electronic and optical properties of the paradigmatic F4TCNQ-doped pentacene in the low-do** limit are investigated by a combination of state-of-the-art many-body \emph{ab initio} methods accounting for environmental screening effects, and a carefully parametrized model Hamiltonian. We demonstrate that while the acceptor level lies very deep in the gap, the inclusion of electron-hole interactions strongly stabilizes dopant-semiconductor charge transfer states and, together with spin statistics and structural relaxation effects, rationalize the possibility for room-temperature dopant ionization. Our findings reconcile available experimental data, shedding light on the partial vs. full charge transfer scenario discussed in the literature, and question the relevance of the standard classification in shallow or deep impurity levels prevailing for inorganic semiconductors.
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Submitted 29 June, 2017; v1 submitted 6 June, 2017;
originally announced June 2017.
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On the room temperature ferroelectricity of hydrogen-bonded charge transfer crystals
Authors:
Gabriele D'Avino,
Matthieu J. Verstraete
Abstract:
We present a theoretical investigation of the anomalous ferroelectricity of mixed-stack charge transfer molecular crystals, based on the Peierls-Hubbard model, and first principles calculations for its parameterization. This approach is first validated by reproducing the temperature-induced transition and the electronic polarization of TTF-CA, and then applied to a novel series of hydrogen-bonded…
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We present a theoretical investigation of the anomalous ferroelectricity of mixed-stack charge transfer molecular crystals, based on the Peierls-Hubbard model, and first principles calculations for its parameterization. This approach is first validated by reproducing the temperature-induced transition and the electronic polarization of TTF-CA, and then applied to a novel series of hydrogen-bonded crystals, for which room temperature ferroelectricity has recently been claimed. Our analysis shows that the hydrogen-bonded systems present a very low degree of charge transfer and hence support a very small polarization. A critical re-examination of experimental data supports our findings, shedding doubts on the ferroelectricity of these systems. More generally, our modelling allows the rationalization of general features of the ferroelectric transition in charge transfer crystals, and suggests design principles for materials optimization.
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Submitted 28 September, 2014;
originally announced September 2014.
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Anomalous dispersion of optical phonons at the neutral-ionic transition: Evidence from diffuse X-ray scattering
Authors:
Gabriele D'Avino,
Alberto Girlando,
Anna Painelli,
Marie-Hélène Lemée-Cailleau,
Zoltán G. Soos
Abstract:
Diffuse X-ray data for mixed stack organic charge-transfer crystals approaching the neutral-ionic phase transition can be quantitatively explained as due to the softening of the optical phonon branch. The interpretation is fully consistent with vibrational spectra, and underlines the importance of electron-phonon coupling in low-dimensional systems with delocalized electrons.
Diffuse X-ray data for mixed stack organic charge-transfer crystals approaching the neutral-ionic phase transition can be quantitatively explained as due to the softening of the optical phonon branch. The interpretation is fully consistent with vibrational spectra, and underlines the importance of electron-phonon coupling in low-dimensional systems with delocalized electrons.
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Submitted 25 August, 2007;
originally announced August 2007.
