Large-area van der Waals epitaxy and magnetic characterization of Fe$_3$GeTe$_2$ films on graphene
Authors:
J. Marcelo J. Lopes,
Dietmar Czubak,
Eugenio Zallo,
Adriana I. Figueroa,
Charles Guillemard,
Manuel Valvidares,
Juan Rubio Zuazo,
Jesús López-Sanchéz,
Sergio O. Valenzuela,
Michael Hanke,
Manfred Ramsteiner
Abstract:
Scalable fabrication of magnetic 2D materials and heterostructures constitutes a crucial step for scaling down current spintronic devices and the development of novel spintronic applications. Here, we report on van der Waals (vdW) epitaxy of the layered magnetic metal Fe$_3$GeTe$_2$ - a 2D crystal with highly tunable properties and a high prospect for room temperature ferromagnetism - directly on…
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Scalable fabrication of magnetic 2D materials and heterostructures constitutes a crucial step for scaling down current spintronic devices and the development of novel spintronic applications. Here, we report on van der Waals (vdW) epitaxy of the layered magnetic metal Fe$_3$GeTe$_2$ - a 2D crystal with highly tunable properties and a high prospect for room temperature ferromagnetism - directly on graphene by employing molecular beam epitaxy. Morphological and structural characterization confirmed the realization of large-area, continuous Fe$_3$GeTe$_2$/graphene heterostructure films with stable interfaces and good crystalline quality. Furthermore, magneto-transport and X-ray magnetic circular dichroism investigations confirmed a robust out-of-plane ferromagnetism in the layers, comparable to state-of-the-art exfoliated flakes from bulk crystals. These results are highly relevant for further research on wafer-scale growth of vdW heterostructures combining Fe$_3$GeTe$_2$ with other layered crystals such as transition metal dichalcogenides for the realization of multifunctional, atomically thin devices.
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Submitted 19 April, 2021;
originally announced April 2021.
Electronic and magnetic properties of $α$-FeGe$_2$ films embedded in vertical spin valve devices
Authors:
Dietmar Czubak,
Samuel Gaucher,
Lars Oppermann,
Jens Herfort,
Klaus Zollner,
Jaroslav Fabian,
Holger T. Grahn,
Manfred Ramsteiner
Abstract:
We studied metastable $α$-FeGe$_2$, a novel layered tetragonal material, embedded as a spacer layer in spin valve structures with ferromagnetic Fe$_3$Si and Co$_2$FeSi electrodes. For both types of electrodes, spin valve operation is demonstrated with a metallic transport behavior of the $α$-FeGe$_2$ spacer layer. The spin valve signals are found to increase both with temperature and spacer thickn…
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We studied metastable $α$-FeGe$_2$, a novel layered tetragonal material, embedded as a spacer layer in spin valve structures with ferromagnetic Fe$_3$Si and Co$_2$FeSi electrodes. For both types of electrodes, spin valve operation is demonstrated with a metallic transport behavior of the $α$-FeGe$_2$ spacer layer. The spin valve signals are found to increase both with temperature and spacer thickness, which is discussed in terms of a decreasing magnetic coupling strength between the ferromagnetic bottom and top electrodes. The temperature-dependent resistances of the spin valve structures exhibit characteristic features, which are explained by ferromagnetic phase transitions between 55 and 110~K. The metallic transport characteristics as well as the low-temperature ferromagnetism are found to be consistent with the results of first-principles calculations.
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Submitted 27 October, 2020; v1 submitted 9 October, 2020;
originally announced October 2020.
