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Transport of orbital currents in systems with strong intervalley coupling: the case of Kekulé distorted graphene
Authors:
Tarik P. Cysne,
R. B. Muniz,
Tatiana G. Rappoport
Abstract:
We show that orbital currents can describe the transport of orbital magnetic moments of Bloch states in models where the formalism based on valley current is not applicable. As a case study, we consider Kekulé distorted graphene. We begin by analyzing the band structure in detail and obtain the orbital magnetic moment operator for this model within the framework of the modern theory of magnetism.…
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We show that orbital currents can describe the transport of orbital magnetic moments of Bloch states in models where the formalism based on valley current is not applicable. As a case study, we consider Kekulé distorted graphene. We begin by analyzing the band structure in detail and obtain the orbital magnetic moment operator for this model within the framework of the modern theory of magnetism. Despite the simultaneous presence of time-reversal and spatial-inversion symmetries, such operator may be defined, although its expectation value at a given energy is zero. Nevertheless, its presence can be exposed by the application of an external magnetic field. We then proceed to study the transport of these quantities. In the Kekulé-$O$ distorted graphene model, the strong coupling between different valleys prevents the definition of a bulk valley current. However, the formalism of the orbital Hall effect together with the non-Abelian description of the magnetic moment operator can be directly applied to describe its transport in these types of models. We show that the Kekulé-$O$ distorted graphene model exhibits an orbital Hall insulating plateau whose height is inversely proportional to the energy band gap produced by intervalley coupling. Our results strengthen the perspective of using the orbital Hall effect formalism as a preferable alternative to the valley Hall effect
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Submitted 18 April, 2024;
originally announced April 2024.
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Controlling the orbital Hall effect in gapped bilayer graphene in the terahertz regime
Authors:
Tarik P. Cysne,
W. J. M. Kort-Kamp,
Tatiana G. Rappoport
Abstract:
We study the orbital Hall effect (OHE) in the AC regime using bilayer graphene (BLG) as a prototypical material platform. While the unbiased BLG has gapless electronic spectra, applying a perpendicular electric field creates an energy band gap that can be continuously tuned from zero to high values. By exploiting this flexibility, we demonstrate the ability to control the behavior of AC orbital Ha…
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We study the orbital Hall effect (OHE) in the AC regime using bilayer graphene (BLG) as a prototypical material platform. While the unbiased BLG has gapless electronic spectra, applying a perpendicular electric field creates an energy band gap that can be continuously tuned from zero to high values. By exploiting this flexibility, we demonstrate the ability to control the behavior of AC orbital Hall conductivity. Particularly, we demonstrate that the orbital Hall conductivity at the neutrality point changes its signal at a critical frequency, the value of which is proportional to the perpendicular electric field. For BLG with narrow band gaps, the active frequency region for the AC OHE may extend to a few terahertz, which is experimentally accessible with current technologies. We also consider the introduction of a perpendicular magnetic field in the weak coupling regime using first-order perturbation theory to illustrate how the breaking of time-reversal symmetry enables the emergence of AC charge Hall effect in the charge-doped situation and modifies the AC orbital Hall conductivity. Our calculations suggest that BLG with narrow bandgaps is a practical candidate for investigating time-dependent orbital angular momentum transport.
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Submitted 28 May, 2024; v1 submitted 7 February, 2024;
originally announced February 2024.
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The impact of Rashba spin-orbit coupling in charge-ordered systems
Authors:
Rodrigo A. Fontenele,
Sebastião dos Anjos Sousa-Júnior,
Tarik P. Cysne,
Natanael C. Costa
Abstract:
We study the impact of the Rashba spin-orbit coupling (RSOC) on the stability of charge-density wave (CDW) in systems with large electron-phonon coupling (EPC). Here, the EPC is considered in the framework of the Holstein model at the half-filled square lattice. We start obtaining the phase diagram of the Rashba-Holstein model using the Hartree-Fock mean-field theory, and identifying the boundarie…
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We study the impact of the Rashba spin-orbit coupling (RSOC) on the stability of charge-density wave (CDW) in systems with large electron-phonon coupling (EPC). Here, the EPC is considered in the framework of the Holstein model at the half-filled square lattice. We start obtaining the phase diagram of the Rashba-Holstein model using the Hartree-Fock mean-field theory, and identifying the boundaries of the CDW and Rashba metal phases. As our main result, we notice that the RSOC disfavors the CDW phase, driving the system to a correlated Rashba metal. Proceeding, we employ a cluster perturbation theory (CPT) approach to investigate the phase diagram beyond the Hartree-Fock approximation. The quantum correlations captured by CPT indicate that the RSOC is even more detrimental to CDW than previously anticipated. That is, the Rashba metal region is observed to be expanded in comparison to the mean-field case. Additionally, we investigate pairing correlations, and the results further strengthen the identification of critical points.
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Submitted 20 November, 2023;
originally announced November 2023.
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Ultrathin films of black phosphorus as suitable platforms for unambiguous observation of the orbital Hall effect
Authors:
Tarik P. Cysne,
Marcio Costa,
Marco Buongiorno Nardelli,
R. B. Muniz,
Tatiana G. Rappoport
Abstract:
Phosphorene, a monolayer of black phosphorus, is a two-dimensional material that lacks a multivalley structure in the Brillouin zone and has negligible spin-orbit coupling. This makes it a promising candidate for investigating the orbital Hall effect independently of the valley or spin Hall effects. To model phosphorene, we utilized a DFT-derived tight-binding Hamiltonian, which is constructed wit…
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Phosphorene, a monolayer of black phosphorus, is a two-dimensional material that lacks a multivalley structure in the Brillouin zone and has negligible spin-orbit coupling. This makes it a promising candidate for investigating the orbital Hall effect independently of the valley or spin Hall effects. To model phosphorene, we utilized a DFT-derived tight-binding Hamiltonian, which is constructed with the pseudo atomic orbital projection method. For that purpose, we use the PAOFLOW code with a newly implemented internal basis that provides a fairly good description of the phosphorene conduction bands. By employing linear response theory, we show that phosphorene exhibits a sizable orbital Hall effect with strong anisotropy in the orbital Hall conductivity for the out-of-plane orbital angular momentum component. The magnitude and sign of the conductivity depend upon the in-plane direction of the applied electric field. These distinctive features enable the observation of the orbital Hall effect in this material unambiguously. The effects of strain and of a perpendicularly applied electric field on the phosphorene orbital-Hall response are also explored. We show that a supplementary electric field applied perpendicular to the phosphorene layer in its conductive regime gives rise to an induced in-plane orbital magnetization.
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Submitted 19 October, 2023; v1 submitted 7 July, 2023;
originally announced July 2023.
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Controlling electric and magnetic Purcell effects in phosphorene via strain engineering
Authors:
P. P. Abrantes,
W. J. M. Kort-Kamp,
F. S. S. Rosa,
C. Farina,
F. A. Pinheiro,
Tarik P. Cysne
Abstract:
We investigate the spontaneous emission lifetime of a quantum emitter near a substrate coated with phosphorene under the influence of uniaxial strain. We consider both electric dipole and magnetic dipole-mediated spontaneous transitions from the excited to the ground state. The modeling of phosphorene is performed by employing a tight-binding model that goes beyond the usual low-energy description…
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We investigate the spontaneous emission lifetime of a quantum emitter near a substrate coated with phosphorene under the influence of uniaxial strain. We consider both electric dipole and magnetic dipole-mediated spontaneous transitions from the excited to the ground state. The modeling of phosphorene is performed by employing a tight-binding model that goes beyond the usual low-energy description. We demonstrate that both electric and magnetic decay rates can be strongly tuned by the application of uniform strain, ranging from a near-total suppression of the Purcell effect to a remarkable enhancement of more than 1300% due to the high flexibility associated with the puckered lattice structure of phosphorene. We also unveil the use of strain as a mechanism to tailor the most probable decay pathways of the emitted quanta. Our results show that uniaxially strained phosphorene is an efficient and versatile material platform for the active control of light-matter interactions thanks to its extraordinary optomechanical properties.
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Submitted 4 July, 2023;
originally announced July 2023.
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Orbital magnetoelectric effect in nanoribbons of transition metal dichalcogenides
Authors:
Tarik P. Cysne,
Filipe S. M. Guimarães,
Luis M. Canonico,
Marcio Costa,
Tatiana G. Rappoport,
R. B. Muniz
Abstract:
The orbital magnetoelectric effect (OME) generically refers to the appearance of an orbital magnetization induced by an applied electric field. Here, we show that nanoribbons of transition metal dichalcogenides (TMDs) with zigzag (ZZ) edges may exhibit a sizeable OME activated by an electric field applied along the ribbons' axis. We examine nanoribbons extracted from a monolayer (1L) and a bilayer…
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The orbital magnetoelectric effect (OME) generically refers to the appearance of an orbital magnetization induced by an applied electric field. Here, we show that nanoribbons of transition metal dichalcogenides (TMDs) with zigzag (ZZ) edges may exhibit a sizeable OME activated by an electric field applied along the ribbons' axis. We examine nanoribbons extracted from a monolayer (1L) and a bilayer (2L) of MoS$_2$ in the trigonal (H) structural phase. Transverse profiles of the induced orbital angular momentum accumulations are calculated to first order in the longitudinally applied electric field. Our results show that close to the nanoribbon's edge-state crossings energy, the orbital angular momentum accumulations take place mainly around the ribbons' edges. They have two contributions: one arising from the orbital Hall effect (OHE) and the other consists in the OME. The former is transversely anti-symmetric with respect to the principal axis of the nanoribbon, whereas the latter is symmetric, and hence responsible for the resultant orbital magnetization induced in the system. We found that the orbital accumulation originating from the OHE for the 1L-nanoribbon is approximately half that of a 2L-nanoribbon. Furthermore, while the OME can reach fairly high values in 1L-TMD nanoribbons, it vanishes in the 2L ones that preserve spatial inversion symmetry.The microscopic features that justify our findings are also discussed.
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Submitted 2 March, 2023; v1 submitted 19 September, 2022;
originally announced September 2022.
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Generation and control of non-local chiral currents in graphene superlattices by orbital Hall effect
Authors:
Juan Salvador-Sánchez,
Luis M. Canonico,
Ana Pérez-Rodríguez,
Tarik P. Cysne,
Yuriko Baba,
Vito Clericò,
Marc Vila,
Daniel Vaquero,
Juan Antonio Delgado-Notario,
José M. Caridad,
Kenji Watanabe,
Takashi Taniguchi,
Rafael A. Molina,
Francisco Domínguez-Adame,
Stephan Roche,
Enrique Diez,
Tatiana G. Rappoport,
Mario Amado
Abstract:
Graphene-based superlattices offer a new materials playground to exploit and control a higher number of electronic degrees of freedom, such as charge, spin, or valley for disruptive technologies. Recently, orbital effects, emerging in multivalley band structure lacking inversion symmetry, have been discussed as possible mechanisms for develo** orbitronics. Here, we report non-local transport mea…
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Graphene-based superlattices offer a new materials playground to exploit and control a higher number of electronic degrees of freedom, such as charge, spin, or valley for disruptive technologies. Recently, orbital effects, emerging in multivalley band structure lacking inversion symmetry, have been discussed as possible mechanisms for develo** orbitronics. Here, we report non-local transport measurements in small gap hBN/graphene/hBN moiré superlattices which reveal very strong magnetic field-induced chiral response which is stable up to room temperature. The measured sign dependence of the non-local signal with respect to the magnetic field orientation clearly indicates the manifestation of emerging orbital magnetic moments. The interpretation of experimental data is well supported by numerical simulations, and the reported phenomenon stands as a formidable way of in-situ manipulation of the transverse flow of orbital information, that could enable the design of orbitronic devices.
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Submitted 9 June, 2022;
originally announced June 2022.
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Connecting Higher-Order Topology with the Orbital Hall Effect in Monolayers of Transition Metal Dichalcogenides
Authors:
Marcio Costa,
Bruno Focassio,
Tarik P. Cysne,
Luis M. Canonico,
Gabriel R. Schleder,
Roberto B. Muniz,
Adalberto Fazzio,
Tatiana G. Rappoport
Abstract:
Monolayers of transition metal dichalcogenides (TMDs) in the 2H structural phase have been recently classified as higher-order topological insulators (HOTI), protected by $C_3$ rotation symmetry. In addition, theoretical calculations show an orbital Hall plateau in the insulating gap of TMDs, characterized by an orbital Chern number. We explore the correlation between these two phenomena in TMD mo…
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Monolayers of transition metal dichalcogenides (TMDs) in the 2H structural phase have been recently classified as higher-order topological insulators (HOTI), protected by $C_3$ rotation symmetry. In addition, theoretical calculations show an orbital Hall plateau in the insulating gap of TMDs, characterized by an orbital Chern number. We explore the correlation between these two phenomena in TMD monolayers in two structural phases: the noncentrosymmetric 2H and the centrosymmetric 1T. Using density functional theory, we confirm the characteristics of 2H-TMDs and reveal that 1T-TMDs are identified by a $\mathbb{Z}_4$ topological invariant. As a result, when cut along appropriate directions, they host conducting edge-states, which cross their bulk energy-band gaps and can transport orbital angular momentum. Our linear response calculations thus indicate that the HOTI phase is accompanied by an orbital Hall effect. Using general symmetry arguments, we establish a connection between the two phenomena with potential implications for spin-orbitronics.
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Submitted 6 March, 2023; v1 submitted 2 May, 2022;
originally announced May 2022.
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Orbital Hall effect in bilayer transition metal dichalcogenides: From the intra-atomic approximation to the Bloch states orbital magnetic moment approach
Authors:
Tarik P. Cysne,
Sayantika Bhowal,
Giovanni Vignale,
Tatiana G. Rappoport
Abstract:
Using an effective Dirac model, we study the orbital Hall effect (OHE) in bilayers of transition metal dichalcogenides with 2H stacking (2H-TMD). We use first-order perturbation theory in the interlayer coupling of the bilayer system to obtain analytical expressions for the orbital Hall conductivity in the linear response regime. We use two distinct descriptions of the orbital angular momentum (OA…
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Using an effective Dirac model, we study the orbital Hall effect (OHE) in bilayers of transition metal dichalcogenides with 2H stacking (2H-TMD). We use first-order perturbation theory in the interlayer coupling of the bilayer system to obtain analytical expressions for the orbital Hall conductivity in the linear response regime. We use two distinct descriptions of the orbital angular momentum (OAM) operator: The first one is the intra-atomic approximation that considers only the intrasite contribution to the OAM [Cysne et al. Phys. Rev. Lett. 126, 056601 (2021)]. The second one uses the Berry-phase formula of the orbital (valley) magnetic moment to describe the OAM operator [Bhowal and Vignale, Phys. Rev. B 103, 195309 (2021)]. This approach includes both intersite and intrasite contributions to the OAM. Our results suggest that the two approaches agree qualitatively in describing the OHE in bilayers of 2H-TMDs, although they present some quantitative differences. We also show that interlayer coupling plays an essential role in understanding the OHE in the unbiased bilayer of 2H-TMD. This coupling causes the Bloch states to become bonding (antibonding) combinations of states of individual layers, demanding the consideration of the non-Abelian structure of the orbital magnetic moment to the occurrence of OHE. As we discuss throughout the work, the emerging picture of transport of OAM in the unbiased bilayer of 2H-TMDs based on OHE is very different from the usual picture based on the valley Hall effect, shedding new lights on previous experimental results. We also discuss the effect of the inclusion of a gate-voltage bias in the bilayer system. Our work gives support to recent theoretical predictions on OHE in two-dimensional materials.
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Submitted 17 May, 2022; v1 submitted 10 January, 2022;
originally announced January 2022.
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Probing topological phase transitions via quantum reflection in the graphene family materials
Authors:
P. P. Abrantes,
Tarik P. Cysne,
D. Szilard,
F. S. S. Rosa,
F. A. Pinheiro,
C. Farina
Abstract:
We theoretically investigate the quantum reflection of different atoms by two-dimensional (2D) materials of the graphene family (silicene, germanene, and stanene), subjected to an external electric field and circularly polarized light. By using Lifshitz theory to compute the Casimir-Polder potential, which ensures that our predictions apply to all regimes of atom-2D surface distances, we demonstra…
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We theoretically investigate the quantum reflection of different atoms by two-dimensional (2D) materials of the graphene family (silicene, germanene, and stanene), subjected to an external electric field and circularly polarized light. By using Lifshitz theory to compute the Casimir-Polder potential, which ensures that our predictions apply to all regimes of atom-2D surface distances, we demonstrate that the quantum reflection probability exhibits distinctive, unambiguous signatures of topological phase transitions that occur in 2D materials. We also show that the quantum reflection probability can be highly tunable by these external agents, depending on the atom-surface combination, reaching a variation of 40% for Rubidium in the presence of a stanene sheet. Our findings attest that not only dispersive forces play a crucial role in quantum reflection, but also that the topological phase transitions of the graphene family materials can be comprehensively and efficiently probed via atom-surface interactions at the nanoscale.
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Submitted 5 August, 2021; v1 submitted 12 May, 2021;
originally announced May 2021.
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Orbital magnetoelectric effect in zigzag nanoribbons of p-band systems
Authors:
Tarik P. Cysne,
Filipe S. M. Guimarães,
Luis M. Canonico,
Tatiana G. Rappoport,
R. B. Muniz
Abstract:
Profiles of the spin and orbital angular momentum accumulations induced by a longitudinally applied electric field are explored in nanoribbons of $p$-band systems with a honeycomb lattice. We show that nanoribbons with zigzag borders can exhibit orbital magnetoelectric effects. More specifically, we have found that purely orbital magnetization oriented perpendicularly to the ribbon may be induced…
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Profiles of the spin and orbital angular momentum accumulations induced by a longitudinally applied electric field are explored in nanoribbons of $p$-band systems with a honeycomb lattice. We show that nanoribbons with zigzag borders can exhibit orbital magnetoelectric effects. More specifically, we have found that purely orbital magnetization oriented perpendicularly to the ribbon may be induced in these systems by means of the external electric field, when sublattice symmetry is broken. The effect is rather general and may occur in other multi-orbital materials.
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Submitted 30 September, 2021; v1 submitted 13 January, 2021;
originally announced January 2021.
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Disentangling orbital and valley Hall effects in bilayers of transition metal dichalcogenides
Authors:
Tarik P. Cysne,
Marcio Costa,
Luis M. Canonico,
M. Buongiorno Nardelli,
R. B. Muniz,
Tatiana G. Rappoport
Abstract:
It has been recently shown that monolayers of transition metal dichalcogenides (TMDs) in the 2H structural phase exhibit relatively large orbital Hall conductivity plateaus within their energy band gaps, where their spin Hall conductivities vanish. However, since the valley Hall effect (VHE) in these systems also generates a transverse flow of orbital angular momentum it becomes experimentally cha…
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It has been recently shown that monolayers of transition metal dichalcogenides (TMDs) in the 2H structural phase exhibit relatively large orbital Hall conductivity plateaus within their energy band gaps, where their spin Hall conductivities vanish. However, since the valley Hall effect (VHE) in these systems also generates a transverse flow of orbital angular momentum it becomes experimentally challenging to distinguish between the two effects in these materials. The VHE requires inversion symmetry breaking to occur, which takes place in the TMD monolayers, but not in the bilayers. We show that a bilayer of 2H-MoS$_2$ is an orbital Hall insulator that exhibits a sizeable OHE in the absence of both spin and valley Hall effects. This phase can be characterised by an orbital Chern number that assumes the value $\mathcal{C}_{L}=2$ for the 2H-MoS$_2$ bilayer and $\mathcal{C}_{L}=1$ for the monolayer, confirming the topological nature of these orbital-Hall insulator systems. Our results are based on density functional theory (DFT) and low-energy effective model calculations and strongly suggest that bilayers of TMDs are highly suitable platforms for direct observation of the orbital Hall insulating phase in two-dimensional materials. Implications of our findings for attempts to observe the VHE in TMD bilayers are also discussed.
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Submitted 5 February, 2021; v1 submitted 15 October, 2020;
originally announced October 2020.
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Orbital Hall Insulating Phase in Transition Metal Dichalcogenide Monolayers
Authors:
Luis M. Canonico,
Tarik P. Cysne,
Alejandro Molina-Sanchez,
R. B. Muniz,
Tatiana G. Rappoport
Abstract:
We show that H-phase transition metal dichalcogenides (TMDs) monolayers such as MoS$_2$ and WSe$_2$, are orbital Hall insulators. They present very large orbital Hall conductivity plateaus in their semiconducting gap, where the spin Hall conductivity vanishes. Our results open the possibility of using TMDs for orbital current injection and orbital torque transfers that surpass their spin-counterpa…
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We show that H-phase transition metal dichalcogenides (TMDs) monolayers such as MoS$_2$ and WSe$_2$, are orbital Hall insulators. They present very large orbital Hall conductivity plateaus in their semiconducting gap, where the spin Hall conductivity vanishes. Our results open the possibility of using TMDs for orbital current injection and orbital torque transfers that surpass their spin-counterparts in spin-orbitronics devices. The orbital Hall effect (OHE) in TMD monolayers occurs even in the absence of spin-orbit coupling. It can be linked to exotic momentum-space Dresselhaus-like orbital textures, analogous to the spin-momentum locking in 2D Dirac fermions that arise from a combination of orbital attributes and lattice symmetry.
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Submitted 30 April, 2020; v1 submitted 10 January, 2020;
originally announced January 2020.
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Two-dimensional orbital Hall insulators
Authors:
Luis M. Canonico,
Tarik P. Cysne,
Tatiana G. Rappoport,
R. B. Muniz
Abstract:
The orbital-Hall effect (OHE), similarly to the spin-Hall effect (SHE), refers to the creation of a transverse flow of orbital angular momentum that is induced by a longitudinally applied electric field. For systems in which the spin-orbit coupling (SOC) is sizeable, the orbital and spin angular momentum degrees of freedom are coupled, and an interrelationship between charge, spin and orbital angu…
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The orbital-Hall effect (OHE), similarly to the spin-Hall effect (SHE), refers to the creation of a transverse flow of orbital angular momentum that is induced by a longitudinally applied electric field. For systems in which the spin-orbit coupling (SOC) is sizeable, the orbital and spin angular momentum degrees of freedom are coupled, and an interrelationship between charge, spin and orbital angular momentum excitations is naturally established. The OHE has been explored mostly in metallic systems, where it can be quite strong. However, several of its features remain unexplored in two-dimensional (2D) materials. Here, we investigate the role of orbital textures for the OHE displayed by multi-orbital 2D materials. We predict the appearance of a rather large orbital Hall effect in these systems both in their metallic and insulating phases. In some cases, the orbital Hall currents are larger than the spin Hall ones, and their use as information carriers widens the development possibilities of novel spin-orbitronic devices.
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Submitted 2 March, 2020; v1 submitted 2 August, 2019;
originally announced August 2019.
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Tuning quantum reflection in graphene with an external magnetic field
Authors:
Marcius Silvestre,
Tarik P. Cysne,
Daniela Szilard,
Felipe A. Pinheiro,
Carlos Farina
Abstract:
We theoretically demonstrate that an external magnetic field can be used to control quantum reflection of matter waves in graphene due to its extraordinary magneto-optical properties. We calculate the quantum reflection probabilities in graphene for three experimentally relevant atomic species (He, Na, and Rb) using the full Casimir-Polder potential computed by Lifshitz formula valid at all distan…
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We theoretically demonstrate that an external magnetic field can be used to control quantum reflection of matter waves in graphene due to its extraordinary magneto-optical properties. We calculate the quantum reflection probabilities in graphene for three experimentally relevant atomic species (He, Na, and Rb) using the full Casimir-Polder potential computed by Lifshitz formula valid at all distance regimes, going beyond the traditional approach to quantum reflection, based on power law potentials, which are known to be valid only in the short distance (non-retarded van der Waals) or in the large distance (retarded) regimes. We predict the energy range for which quantum reflection is more likely to occur as a function of the magnetic field, and show that the quantum reflection probabilities exhibit discontinuities that reflect the structure of Landau levels in graphene. Altogether our findings suggest an alternative way to control quantum reflection at the nanoscale, and pave the way for the design of alternative, magnetically tuned reflective diffraction elements for matter waves.
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Submitted 5 September, 2019; v1 submitted 24 June, 2019;
originally announced June 2019.
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Crystal-field effects in graphene with interface-induced spin-orbit coupling
Authors:
Tarik P. Cysne,
Aires Ferreira,
Tatiana G. Rappoport
Abstract:
We consider theoretically the influence of crystalline fields on the electronic structure of graphene placed on a layered material with reduced symmetry and large spin-orbit coupling (SOC). We use a perturbative procedure combined with the Slater-Koster method to derive the low-energy effective Hamiltonian around the $K$ points and estimate the magnitude of the effective couplings. Two simple mode…
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We consider theoretically the influence of crystalline fields on the electronic structure of graphene placed on a layered material with reduced symmetry and large spin-orbit coupling (SOC). We use a perturbative procedure combined with the Slater-Koster method to derive the low-energy effective Hamiltonian around the $K$ points and estimate the magnitude of the effective couplings. Two simple models for the envisaged graphene-substrate hybrid bilayer are considered, in which the relevant atomic orbitals hybridize with either top or hollow sites of the graphene honeycomb lattice. In both cases, the interlayer coupling to a crystal-field-split substrate is found to generate highly anisotropic proximity spin-orbit interactions, including in-plane 'spin-valley' coupling. Interestingly, when an anisotropic intrinsic-type SOC becomes sizeable, the bilayer system is effectively a quantum spin Hall insulator characterized by in-plane helical edge states robust against Bychkov-Rashba effect. Finally, we discuss the type of substrate required to achieve anisotropic proximity-induced SOC and suggest possible candidates to further explore crystal field effects in graphene-based heterostructures.
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Submitted 9 April, 2018;
originally announced April 2018.
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Quantum Hall Effect in Graphene with Interface-Induced Spin-Orbit Coupling
Authors:
Tarik P. Cysne,
Jose H. Garcia,
Alexandre R. Rocha,
Tatiana G. Rappoport
Abstract:
We consider an effective model for graphene with interface-induced spin-orbit coupling and calculate the quantum Hall effect in the low-energy limit. We perform a systematic analysis of the contribution of the different terms of the effective Hamiltonian to the quantum Hall effect (QHE). By analysing the spin-splitting of the quantum Hall states as a function of magnetic field and gate-voltage, we…
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We consider an effective model for graphene with interface-induced spin-orbit coupling and calculate the quantum Hall effect in the low-energy limit. We perform a systematic analysis of the contribution of the different terms of the effective Hamiltonian to the quantum Hall effect (QHE). By analysing the spin-splitting of the quantum Hall states as a function of magnetic field and gate-voltage, we obtain different scaling laws that can be used to characterise the spin-orbit coupling in experiments. Furthermore, we employ a real-space quantum transport approach to calculate the quantum Hall conductivity and investigate the robustness of the QHE to disorder introduced by hydrogen impurities. For that purpose, we combine first-principles calculations and a genetic algorithm strategy to obtain a graphene-only Hamiltonian that models the impurity.
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Submitted 21 November, 2017; v1 submitted 13 November, 2017;
originally announced November 2017.
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Numerical calculation of the Casimir-Polder interaction between a graphene sheet with vacancies and an atom
Authors:
T. P. Cysne,
T. G. Rappoport,
Aires Ferreira,
J. V. Lopes,
N. M. R. Peres
Abstract:
In this work the Casimir{Polder interaction energy between a rubidium atom and a disordered graphene sheet is investigated beyond the Dirac cone approximation by means of accurate real-space calculations. As a model of defected graphene, we consider a tight-binding model of Π-electrons on a honeycomb lattice with a small concentration of point defects. The optical response of the graphene sheet is…
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In this work the Casimir{Polder interaction energy between a rubidium atom and a disordered graphene sheet is investigated beyond the Dirac cone approximation by means of accurate real-space calculations. As a model of defected graphene, we consider a tight-binding model of Π-electrons on a honeycomb lattice with a small concentration of point defects. The optical response of the graphene sheet is evaluated with full spectral resolution by means of exact Chebyshev polynomial expansions of the Kubo formula in large lattices with in excess of ten million atoms. At low temperatures, the optical response of defected graphene is found to display two qualitatively distinct behavior with a clear transition around non-zero Fermi energy, μ~μ*. In the vicinity of the Dirac point, the imaginary part of optical conductivity is negative for low frequencies while the real part is strongly suppressed. On the other hand, for high do**, it has the same features found in the Drude model within the Dirac cone approximation, namely, a Drude peak at small frequencies and a change of sign in the imaginary part above the interband threshold ω> 2μ. These characteristics translate into a non-monotonic behavior of the Casimir{Polder interaction energy with very small variation with do** in the vicinity of the neutrality point while having the same form of the interaction calculated with Drude's model at high electronic density.
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Submitted 7 December, 2016; v1 submitted 15 August, 2016;
originally announced August 2016.
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Magnetic quantum phase transitions of the antiferromagnetic J_{1}-J_{2} Heisenberg model
Authors:
T. P. Cysne,
M. B. Silva Neto
Abstract:
We obtain the complete phase diagram of the antiferromagnetic $J_{1}$-$J_{2}$ model, $0\leq α= J_2/J1 \leq 1$, within the framework of the $O(N)$ nonlinear sigma model. We find two magnetically ordered phases, one with N\' eel order, for $α\leq 0.4$, and another with collinear order, for $α\geq 0.6$, separated by a nonmagnetic region, for $0.4\leq α\leq 0.6$, where a gapped spin liquid is found. T…
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We obtain the complete phase diagram of the antiferromagnetic $J_{1}$-$J_{2}$ model, $0\leq α= J_2/J1 \leq 1$, within the framework of the $O(N)$ nonlinear sigma model. We find two magnetically ordered phases, one with N\' eel order, for $α\leq 0.4$, and another with collinear order, for $α\geq 0.6$, separated by a nonmagnetic region, for $0.4\leq α\leq 0.6$, where a gapped spin liquid is found. The transition at $α=0.4$ is of the second order while the one at $α=0.6$ is of the first order and the spin gaps cross at $α=0.5$. Our results are exact at $N\rightarrow\infty$ and agree with numerical results from different methods.
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Submitted 5 June, 2015; v1 submitted 6 April, 2015;
originally announced April 2015.