Showing 1–12 of 12 results for author: Cuenca, J

Superconducting boron doped nanocrystalline diamond microwave coplanar resonator

Authors: Jerome A. Cuenca, Thomas Brien, Soumen Mandal, Scott Manifold, Simon Doyle, Adrian Porch, Georgina M. Klemencic, Oliver A. Williams

Abstract: A superconducting boron doped nanocrystalline diamond (B-NCD) coplanar waveguide resonator (CPR) is presented for kinetic inductance ($L_k$) and penetration depth ($λ_{\rm{L}}$) measurements at microwave frequencies of 0.4 to 1.2 GHz and at temperatures below 3 K. Using a simplified effective medium CPR approach, this work demonstrates that thin granular B-NCD films ($t\approx $ 500 nm) on Si have… ▽ More A superconducting boron doped nanocrystalline diamond (B-NCD) coplanar waveguide resonator (CPR) is presented for kinetic inductance ($L_k$) and penetration depth ($λ_{\rm{L}}$) measurements at microwave frequencies of 0.4 to 1.2 GHz and at temperatures below 3 K. Using a simplified effective medium CPR approach, this work demonstrates that thin granular B-NCD films ($t\approx $ 500 nm) on Si have a large penetration depth ($λ_{\rm{L}}\approx 4.3$ to 4.4 $μ$m), and therefore an associated high kinetic inductance ($L_{k,\square} \approx $ 670 to 690 pH/$\square$). These values are much larger than those typically obtained for films on single crystal diamond which is likely due to the significant granularity of the nanocrystalline films. Based on the measured Q factors of the structure, the calculated surface resistance in this frequency range is found to be as low as $\approx$ 2 to 4 $μΩ$ at $T<2$ K, demonstrating the potential for granular B-NCD for high quality factor superconducting microwave resonators and highly sensitive kinetic inductance detectors. △ Less

Submitted 27 February, 2022; originally announced February 2022.

Comments: First draft

Microwave plasma modelling in clamshell chemical vapour deposition diamond reactors

Authors: Jerome A. Cuenca, Soumen Mandal, Evan L. H. Thomas, Oliver A. Williams

Abstract: A microwave plasma model of a chemical vapour deposition (CVD) reactor is presented for understanding spatial heteroepitaxial growth of polycrystalline diamond on Si. This work is based on the TM0(n>1)p clamshell style reactor (Seki Diamond/ASTEX SDS 6K, Carat CTS6U, ARDIS-100 style) whereby a simplified H_2 plasma model is used to show the radial variation in growth rate over small samples with d… ▽ More A microwave plasma model of a chemical vapour deposition (CVD) reactor is presented for understanding spatial heteroepitaxial growth of polycrystalline diamond on Si. This work is based on the TM0(n>1)p clamshell style reactor (Seki Diamond/ASTEX SDS 6K, Carat CTS6U, ARDIS-100 style) whereby a simplified H_2 plasma model is used to show the radial variation in growth rate over small samples with different sample holders. The model uses several steps: an electromagnetic (EM) eigenfrequency solution, a frequency-transient EM/plasma fluid solution and transient a heat transfer solution at low and high microwave power density. Experimental growths provide model validation with characterisation using Raman spectroscopy and scanning electron microscopy. This work demonstrates that shallow holders result in non-uniform diamond films, with a radial variation akin to the electron density and temperature distribution at the wafer surface. For the same process conditions, greater homogeneity is observed for taller holders, however, if the height is too extreme, the diamond quality reduces. From a modelling perspective, EM solutions are limited but useful for examining electric field focusing at the sample edges, resulting in accelerated diamond growth. For better accuracy, plasma fluid and heat transfer solutions are imperative for modelling spatial growth variation. △ Less

Submitted 22 November, 2021; v1 submitted 19 November, 2021; originally announced November 2021.

Comments: EDIT1: Title changed

Surface zeta potential and diamond growth on gallium oxide single crystal

Authors: Soumen Mandal, Karsten Arts, Harm C. M. Knoops, Jerome Cuenca, Georgina Klemencic, Oliver A. Williams

Abstract: In this work a strategy to grow diamond on $β$-Ga$_2$O$_3$ has been presented. The $ζ$-potential of the $β$-Ga$_2$O$_3$ substrate was measured and it was found to be negative with an isoelectric point at pH $\sim$ 4.6. The substrates were seeded with mono-dispersed diamond solution for growth of diamond. The seeded substrates were etched when exposed to diamond growth plasma and globules of galliu… ▽ More In this work a strategy to grow diamond on $β$-Ga$_2$O$_3$ has been presented. The $ζ$-potential of the $β$-Ga$_2$O$_3$ substrate was measured and it was found to be negative with an isoelectric point at pH $\sim$ 4.6. The substrates were seeded with mono-dispersed diamond solution for growth of diamond. The seeded substrates were etched when exposed to diamond growth plasma and globules of gallium could be seen on the surface. To overcome the problem $\sim$100 nm of SiO$_2$ and Al$_2$O$_3$ were deposited using atomic layer deposition. The nanodiamond seeded SiO$_2$ layer was effective in protecting the $β$-Ga$_2$O$_3$ substrate and thin diamond layers could be grown. In contrast Al$_2$O$_3$ layers were damaged when exposed to diamond growth plasma. The thin diamond layers were characterised with scanning electron microscopy and Raman spectroscopy. Raman spectroscopy revealed the diamond layer to be under compressive stress of 1.3 -- 2.8GPa. △ Less

Submitted 2 April, 2021; originally announced April 2021.

Journal ref: Carbon, 181, 79 (2021)

Deterministic and statistical methods for the characterisation of poroelastic media from multi-observation sound absorption measurements

Authors: Jacques Cuenca, Peter Göransson, Laurent De Ryck, Timo Lähivaara

Abstract: This paper proposes a framework for the estimation of the transport and elastic properties of open-cell poroelastic media based on sound absorption measurements. The sought properties are the Biot-Johnson-Champoux-Allard model parameters, namely five transport parameters, two elastic properties and the mass density, as well as the sample thickness. The methodology relies on a multi-observation app… ▽ More This paper proposes a framework for the estimation of the transport and elastic properties of open-cell poroelastic media based on sound absorption measurements. The sought properties are the Biot-Johnson-Champoux-Allard model parameters, namely five transport parameters, two elastic properties and the mass density, as well as the sample thickness. The methodology relies on a multi-observation approach, consisting in combining multiple independent measurements into a single dataset, with the aim of over-determining the problem. In the present work, a poroelastic sample is placed in an impedance tube and tested in two loading conditions, namely in a rigid-backing configuration and coupled to a resonant expansion chamber. Given the non-monotonic nature of the experimental data, an incremental parameter estimation procedure is used in order to guide the model parameters towards the global solution without terminating at local minima. A statistical inversion approach is also discussed, providing refined point estimates, uncertainty ranges and parameter correlations. The methodology is applied to the characterisation of a sample of melamine foam and provides estimates of all nine parameters with compact uncertainty ranges. It is shown that the model parameters are retrieved with a lower uncertainty in the multi-observation case, as compared with a single-observation case. The method proposed here does not require prior knowledge of the thickness or any of the properties of the sample, and can be carried out with a standard two-microphone impedance tube. △ Less

Submitted 21 March, 2021; originally announced March 2021.

Thermal stress modelling of diamond on GaN/III-Nitride membranes

Authors: Jerome A. Cuenca, Matthew D. Smith, Daniel E. Field, Fabien C-P. Massabuau, Soumen Mandal, James Pomeroy, David J. Wallis, Rachel A. Oliver, Iain Thayne, Martin Kuball, Oliver A. Williams

Abstract: Diamond heat-spreaders for gallium nitride (GaN) devices currently depend upon a robust wafer bonding process. Bonding-free membrane methods demonstrate potential, however, chemical vapour deposition (CVD) of diamond directly onto a III-nitride (III-N) heterostructure membrane induces significant thermal stresses. In this work, these thermal stresses are investigated using an analytical approach,… ▽ More Diamond heat-spreaders for gallium nitride (GaN) devices currently depend upon a robust wafer bonding process. Bonding-free membrane methods demonstrate potential, however, chemical vapour deposition (CVD) of diamond directly onto a III-nitride (III-N) heterostructure membrane induces significant thermal stresses. In this work, these thermal stresses are investigated using an analytical approach, a numerical model and experimental validation. The thermal stresses are caused by the mismatch in the coefficient of thermal expansion (CTE) between the GaN/III-N stack, silicon (Si) and the diamond from room temperature to CVD growth temperatures. Simplified analytical wafer bow models underestimate the membrane bow for small sizes while numerical models replicate the stresses and bows with increased accuracy using temperature gradients. The largest tensile stress measured using Raman spectroscopy at room temperature was approximately 1.0 $\pm0.2$ GPa while surface profilometry shows membrane bows as large as \SI{58}{\micro\metre}. This large bow is caused by additional stresses from the Si frame in the initial heating phase which are held in place by the diamond and highlights challenges for any device fabrication using contact lithography. However, the bow can be reduced if the membrane is pre-stressed to become flat at CVD temperatures. In this way, a sufficient platform to grow diamond on GaN/III-N structures without wafer bonding can be realised. △ Less

Submitted 18 February, 2021; originally announced February 2021.

Journal ref: Carbon 174, 647-661 (2021)

Search for Coherent Elastic Scattering of Solar $^8$B Neutrinos in the XENON1T Dark Matter Experiment

Authors: E. Aprile, J. Aalbers, F. Agostini, S. Ahmed Maouloud, M. Alfonsi, L. Althueser, F. D. Amaro, S. Andaloro, V. C. Antochi, E. Angelino, J. R. Angevaare, F. Arneodo, L. Baudis, B. Bauermeister, L. Bellagamba, M. L. Benabderrahmane, A. Brown, E. Brown, S. Bruenner, G. Bruno, R. Budnik, C. Capelli, J. M. R. Cardoso, D. Cichon, B. Cimmino , et al. (113 additional authors not shown)

Abstract: We report on a search for nuclear recoil signals from solar $^8$B neutrinos elastically scattering off xenon nuclei in XENON1T data, lowering the energy threshold from 2.6 keV to 1.6 keV. We develop a variety of novel techniques to limit the resulting increase in backgrounds near the threshold. No significant $^8$B neutrino-like excess is found in an exposure of 0.6 t $\times$ y. For the first tim… ▽ More We report on a search for nuclear recoil signals from solar $^8$B neutrinos elastically scattering off xenon nuclei in XENON1T data, lowering the energy threshold from 2.6 keV to 1.6 keV. We develop a variety of novel techniques to limit the resulting increase in backgrounds near the threshold. No significant $^8$B neutrino-like excess is found in an exposure of 0.6 t $\times$ y. For the first time, we use the non-detection of solar neutrinos to constrain the light yield from 1-2 keV nuclear recoils in liquid xenon, as well as non-standard neutrino-quark interactions. Finally, we improve upon world-leading constraints on dark matter-nucleus interactions for dark matter masses between 3 GeV/c$^2$ and 11 GeV/c$^2$ by as much as an order of magnitude. △ Less

Submitted 15 March, 2021; v1 submitted 4 December, 2020; originally announced December 2020.

Journal ref: Phys. Rev. Lett. 126, 091301 (2021)

Search for inelastic scattering of WIMP dark matter in XENON1T

Authors: XENON Collaboration, E. Aprile, J. Aalbers, F. Agostini, M. Alfonsi, L. Althueser, F. D. Amaro, S. Andaloro, E. Angelino, J. R. Angevaare, V. C. Antochi, F. Arneodo, L. Baudis, B. Bauermeister, L. Bellagamba, M. L. Benabderrahmane, A. Brown, E. Brown, S. Bruenner, G. Bruno, R. Budnik, C. Capelli, J. M. R. Cardoso, D. Cichon, B. Cimmino , et al. (116 additional authors not shown)

Abstract: We report the results of a search for the inelastic scattering of weakly interacting massive particles (WIMPs) in the XENON1T dark matter experiment. Scattering off $^{129}$Xe is the most sensitive probe of inelastic WIMP interactions, with a signature of a 39.6 keV de-excitation photon detected simultaneously with the nuclear recoil. Using an exposure of 0.89 tonne-years, we find no evidence of i… ▽ More We report the results of a search for the inelastic scattering of weakly interacting massive particles (WIMPs) in the XENON1T dark matter experiment. Scattering off $^{129}$Xe is the most sensitive probe of inelastic WIMP interactions, with a signature of a 39.6 keV de-excitation photon detected simultaneously with the nuclear recoil. Using an exposure of 0.89 tonne-years, we find no evidence of inelastic WIMP scattering with a significance of more than 2$σ$. A profile-likelihood ratio analysis is used to set upper limits on the cross-section of WIMP-nucleus interactions. We exclude new parameter space for WIMPs heavier than 100 GeV/c${}^2$, with the strongest upper limit of $3.3 \times 10^{-39}$ cm${}^2$ for 130 GeV/c${}^2$ WIMPs at 90\% confidence level. △ Less

Submitted 26 February, 2021; v1 submitted 20 November, 2020; originally announced November 2020.

Comments: 9 pages, 4 figures

Journal ref: Phys. Rev. D 103, 063028 (2021)

Thick adherent diamond films on AlN with low thermal barrier resistance

Authors: Soumen Mandal, Jerome Cuenca, Fabien Massabuau, Chao Yuan, Henry Bland, James W. Pomeroy, David Wallis, Tim Batten, David Morgan, Rachel Oliver, Martin Kuball, Oliver A. Williams

Abstract: Growth of $>$100 $μ$m thick diamond layer adherent on aluminium nitride is presented in this work. While thick films failed to adhere on untreated AlN films, hydrogen/nitrogen plasma treated AlN films retained the thick diamond layers. Clear differences in zeta potential measurement confirms the surface modification due to hydrogen/nitrogen plasma treatment. Areal Raman maps showed an increase in… ▽ More Growth of $>$100 $μ$m thick diamond layer adherent on aluminium nitride is presented in this work. While thick films failed to adhere on untreated AlN films, hydrogen/nitrogen plasma treated AlN films retained the thick diamond layers. Clear differences in zeta potential measurement confirms the surface modification due to hydrogen/nitrogen plasma treatment. Areal Raman maps showed an increase in non-diamond carbon in the initial layers of diamond grown on pre-treated AlN. The presence of non-diamond carbon has minimal effect on the interface between diamond and AlN. The surfaces studied with x-ray photoelectron spectroscopy (XPS) revealed a clear distinction between pre-treated and untreated samples. The surface aluminium goes from nitrogen rich environment to an oxygen rich environment after pre-treatment. Cross section transmission electron microscopy shows a clean interface between diamond and AlN. Thermal barrier resistance between diamond and AlN was found to be in the range of 16 m$^2$K/GW which is a large improvement on the current state-of-the-art. △ Less

Submitted 4 July, 2019; originally announced July 2019.

Dielectric spectroscopy of hydrogenated hexagonal boron nitride ceramics

Authors: Jerome A. Cuenca, Soumen Mandal, Malcolm Snowball, Adrian Porch, Oliver A. Williams

Abstract: Hexagonal boron nitride (h-BN) is a critical material for 2D electronic devices for graphene and has attracted a considerable amount of attention owing to its structural similarity and semiconducting property. However, modifying its wide-band gap is a challenge. Hydrogenation is a potential method of altering the electrical properties, although is seldom experimentally measured. Here, the complex… ▽ More Hexagonal boron nitride (h-BN) is a critical material for 2D electronic devices for graphene and has attracted a considerable amount of attention owing to its structural similarity and semiconducting property. However, modifying its wide-band gap is a challenge. Hydrogenation is a potential method of altering the electrical properties, although is seldom experimentally measured. Here, the complex permittivity of h-BN after various hydrogen treatments have been investigated. For untreated h-BN, a frequency independent dielectric constant was measured ($\sim4.2 \pm0.2$) and an immeasurably low dielectric loss, demonstrating the ideal dielectric nature of h-BN across the $10^3$ to $10^{10}$ Hz range. However, after atomic H-plasma treatment in a microwave chemical vapour deposition (CVD) reactor, the complex permittivity amplifies dramatically, introducing dielectric dispersion through Debye-type dielectric relaxations ($\varepsilon_{\textrm{s}}\approx20\pm2$, $\varepsilon_{\infty}\approx4.2\pm0.2$) and a percolating long range conductivity ($\sim0.32$ mS/m). Annealing in molecular hydrogen at similar CVD temperatures showed minimal effect. Raman spectroscopy also detected minimal change in all samples, implying the increase is not due to other phases. This leads to the experimental conclusion that hydrogenation, through atomic H-plasma treatment, results in a moderate increase in room temperature electrical conductivity, an associated finite dielectric loss factor. The potential as a tunable wide-band gap semiconductor is highlighted however for insulating dielectric substrate applications, microwave CVD may destroy these desirable properties. △ Less

Submitted 11 November, 2019; v1 submitted 14 June, 2019; originally announced June 2019.

Superconducting boron doped nanocrystalline diamond on boron nitride ceramics

Authors: Soumen Mandal, Henry A. Bland, Jerome A. Cuenca, Malcolm Snowball, Oliver A. Williams

Abstract: In this work we have demonstrated the growth of nanocrystalline diamond on boron nitride ceramic. We measured the zeta potential of the ceramics to select the diamond seeds. Diamond was then grown on the seeded ceramics using a microwave chemical vapour deposition system. A clear difference was found between the samples which were seeded with nanodiamond and the ones not seeded before growth. Rama… ▽ More In this work we have demonstrated the growth of nanocrystalline diamond on boron nitride ceramic. We measured the zeta potential of the ceramics to select the diamond seeds. Diamond was then grown on the seeded ceramics using a microwave chemical vapour deposition system. A clear difference was found between the samples which were seeded with nanodiamond and the ones not seeded before growth. Raman spectroscopy confirmed the excellent quality of the diamond film. Dielectric measurements showed an increase in the dielectric constant of the material after diamond growth. The diamond was also doped with boron to make it superconducting. The film had a transition temperature close to 3.4K. Similar strategies can be applied for growth of diamond on other types of ceramics. △ Less

Submitted 8 May, 2019; originally announced May 2019.

Journal ref: Nanoscale, 11, 10266 (2019)

Parameter estimation in modelling frequency response of coupled systems using a stepwise approach

Authors: Peter Göransson, Jacques Cuenca, Timo Lähivaara

Abstract: This paper studies the problem of parameter estimation in resonant, acoustic fluid-structure interaction problems over a wide frequency range. Problems with multiple resonances are known to be subjected to local minima, which represents a major challenge in the field of parameter identification. We propose a stepwise approach consisting in subdividing the frequency spectrum such that the solution… ▽ More This paper studies the problem of parameter estimation in resonant, acoustic fluid-structure interaction problems over a wide frequency range. Problems with multiple resonances are known to be subjected to local minima, which represents a major challenge in the field of parameter identification. We propose a stepwise approach consisting in subdividing the frequency spectrum such that the solution to a low-frequency subproblem serves as the starting point for the immediately higher frequency range. In the current work, two different inversion frameworks are used. The first approach is a gradient-based deterministic procedure that seeks the model parameters by minimising a cost function in the least squares sense and the second approach is a Bayesian inversion framework. The latter provides a potential way to assess the validity of the least squares estimate. In addition, it presents several advantages by providing invaluable information on the uncertainty and correlation between the estimated parameters. The methodology is illustrated on synthetic measurements with known design variables and controlled noise levels. The model problem is deliberately kept simple to allow for extensive numerical experiments to be conducted in order to investigate the nature of the local minima in full spectrum analyses and to assess the potential of the proposed method to overcome these. Numerical experiments suggest that the proposed methods may present an efficient approach to find material parameters and their uncertainty estimates with acceptable accuracy. △ Less

Submitted 15 August, 2018; originally announced August 2018.

Obtaining the coefficients of a Vector Autoregression Model through minimization of parameter criteria

Authors: Alfonso L. Castaño, Javier Cuenca, Domingo Giménez, Jose J. López-Espín, Alberto Pérez-Bernabeu

Abstract: VAR models are a type of multi-equation model that have been widely applied in econometrics. With the arrival of Big Data, huge amounts of data are being collected in numerous fields, making feasible the application of these kind of statistical models. Tools exist to tackle this problem, but the large amount of data, along with the availability of computational techniques and high performance syst… ▽ More VAR models are a type of multi-equation model that have been widely applied in econometrics. With the arrival of Big Data, huge amounts of data are being collected in numerous fields, making feasible the application of these kind of statistical models. Tools exist to tackle this problem, but the large amount of data, along with the availability of computational techniques and high performance systems, advise an in-depth analysis of the computational aspects of VAR, so large models can be solved efficiently with today's computational systems. This work aims to solve a VAR model by obtaining the coefficients through heuristic and metaheuristic algorithms, minimizing one parameter criterion, and also to compare with those coefficients obtained by OLS. Furthermore, we consider different approaches to reduce the time required to find the model like using matrix decompositions (QR or LQ), exploiting matrix structure, using high performance linear algebra subroutines (BLAS and LAPACK) or parallel metaheuristics. △ Less

Submitted 26 November, 2017; originally announced November 2017.

Comments: International Workshop on Optimization and Learning: Challenges and Applications, Alicante (Spain)