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Heteroatomic Andreev molecule in a superconducting island-double quantum dot hybrid
Authors:
Olivér Kürtössy,
Mihály Bodócs,
Cătălin Paşcu Moca,
Zoltán Scherübl,
Ella Nikodem,
Thomas Kanne,
Jesper Nygård,
Gergely Zaránd,
Péter Makk,
Szabolcs Csonka
Abstract:
Topological superconductors (SCs) hold great promise for fault-tolerant quantum hardware, however, their experimental realization is very challenging. Recently, superconducting artificial molecules (Andreev molecules) have opened new avenues to engineer topological superconducting materials. In this work, we demonstrate a heteroatomic Andreev molecule, where two normal artificial atoms realized by…
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Topological superconductors (SCs) hold great promise for fault-tolerant quantum hardware, however, their experimental realization is very challenging. Recently, superconducting artificial molecules (Andreev molecules) have opened new avenues to engineer topological superconducting materials. In this work, we demonstrate a heteroatomic Andreev molecule, where two normal artificial atoms realized by quantum dots (QDs) are coupled by a superconducting island (SCI). We show that the two normal atoms strongly hybridize and form a 3-electron-based molecular state. Our density matrix renormalization group (DMRG) calculations explain quantitatively the robust binding of electrons. The tunability of the structure allows us to drive a quantum phase transition from an antiferromagnetic Andreev molecular state to a heteroatomic Andreev molecule with ferromagnetically coupled QDs using simple electrical gating.
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Submitted 30 June, 2024;
originally announced July 2024.
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Determination of the current-phase relation of an InAs 2DEG Josephson junction with a microwave resonator
Authors:
Zoltán Scherübl,
Máté Sütő,
Dávid Kóti,
Endre Tóvári,
Csaba Horváth,
Tamás Kalmár,
Bence Vasas,
Martin Berke,
Magdhi Kirti,
Giorgio Biasiol,
Szabolcs Csonka,
Péter Makk,
Gergő Fülöp
Abstract:
Semiconductor-superconductor hybrid nanocircuits are of high interest due to their potential applications in quantum computing. Semiconductors with a strong spin-orbit coupling and large $g$-factor are particularly attractive since they are the basic building blocks of novel qubit architectures. However, for the engineering of these complex circuits, the building blocks must be characterized in de…
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Semiconductor-superconductor hybrid nanocircuits are of high interest due to their potential applications in quantum computing. Semiconductors with a strong spin-orbit coupling and large $g$-factor are particularly attractive since they are the basic building blocks of novel qubit architectures. However, for the engineering of these complex circuits, the building blocks must be characterized in detail. We have investigated a Josephson junction where the weak link is a two-dimensional electron gas (2DEG) hosted in an InAs/InGaAs heterostructure grown on a GaAs substrate. We employed the in-situ epitaxially grown Al layer as superconducting contacts to form an rf SQUID, and also to create a microwave resonator for sensing the Josephson inductance. We determined the gate-dependent current-phase relation, and observed supercurrent interference in out-of-plane magnetic fields. With the application of an in-plane magnetic field, we induced asymmetry in the interference pattern, which was found to be anisotropic in the device plane.
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Submitted 28 June, 2024;
originally announced June 2024.
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Self-heating effects and switching dynamics in graphene multiterminal Josephson junctions
Authors:
Máté Kedves,
Tamás Pápai,
Gergő Fülöp,
Kenji Watanabe,
Takashi Taniguchi,
Péter Makk,
Szabolcs Csonka
Abstract:
We experimentally investigate the electronic transport properties of a three-terminal graphene Josephson junction. We find that self-heating effects strongly influence the behaviour of this multiterminal Josephson junction (MTJJ) system. We show that existing simulation methods based on resistively and capacitively shunted Josephson junction networks can be significantly improved by taking into ac…
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We experimentally investigate the electronic transport properties of a three-terminal graphene Josephson junction. We find that self-heating effects strongly influence the behaviour of this multiterminal Josephson junction (MTJJ) system. We show that existing simulation methods based on resistively and capacitively shunted Josephson junction networks can be significantly improved by taking into account these heating effects. We also investigate the phase dynamics in our MTJJ by measuring its switching current distribution and find correlated switching events in different junctions. We show that the switching dynamics is governed by phase diffusion at low temperatures. Furthermore, we find that self-heating introduces additional dam** which results in overdamped I-V characteristics when normal and supercurrents coexist in the device.
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Submitted 12 February, 2024;
originally announced February 2024.
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Switching dynamics in Al/InAs nanowire-based gate-controlled superconducting switch
Authors:
Tosson Elalaily,
Martin Berke,
Ilari Lilja,
Alexander Savin,
Gergő Fülöp,
Lőrinc Kupás,
Thomas Kanne,
Jesper Nygård,
Péter Makk,
Pertti Hakonen,
Szabolcs Csonka
Abstract:
The observation of the gate-controlled supercurrent (GCS) effect in superconducting nanostructures increased the hopes for realizing a superconducting equivalent of semiconductor field-effect transistors. However, recent works attribute this effect to various leakage-based scenarios, giving rise to a debate on its origin. A proper understanding of the microscopic process underlying the GCS effect…
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The observation of the gate-controlled supercurrent (GCS) effect in superconducting nanostructures increased the hopes for realizing a superconducting equivalent of semiconductor field-effect transistors. However, recent works attribute this effect to various leakage-based scenarios, giving rise to a debate on its origin. A proper understanding of the microscopic process underlying the GCS effect and the relevant time scales would be beneficial to evaluate the possible applications. In this work, we observed gate-induced two-level fluctuations between the superconducting state and normal state in Al/InAs nanowires (NWs). Noise correlation measurements show a strong correlation with leakage current fluctuations. The time-domain measurements show that these fluctuations have Poissonian statistics. Our detailed analysis of the leakage current measurements reveals that it is consistent with the stress-induced leakage current (SILC), in which inelastic tunneling with phonon generation is the predominant transport mechanism. Our findings shed light on the microscopic origin of the GCS effect and give deeper insight into the switching dynamics of the superconducting NW under the influence of the strong gate voltage.
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Submitted 28 May, 2024; v1 submitted 24 December, 2023;
originally announced December 2023.
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Signature of pressure-induced topological phase transition in ZrTe$_5$
Authors:
Zoltán Kovács-Krausz,
Dániel Nagy,
Albin Márffy,
Bogdan Karpiak,
Zoltán Tajkov,
László Oroszlány,
János Koltai,
Péter Nemes-Incze,
Saroj P. Dash,
Péter Makk,
Szabolcs Csonka,
Endre Tóvári
Abstract:
The layered van der Waals material ZrTe$_5$ is known as a candidate topological insulator (TI), however its topological phase and the relation with other properties such as an apparent Dirac semimetallic state is still a subject of debate. We employ a semiclassical multicarrier transport (MCT) model to analyze the magnetotransport of ZrTe$_5$ nanodevices at hydrostatic pressures up to 2 GPa. The t…
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The layered van der Waals material ZrTe$_5$ is known as a candidate topological insulator (TI), however its topological phase and the relation with other properties such as an apparent Dirac semimetallic state is still a subject of debate. We employ a semiclassical multicarrier transport (MCT) model to analyze the magnetotransport of ZrTe$_5$ nanodevices at hydrostatic pressures up to 2 GPa. The temperature dependence of the MCT results between 10 and 300 K is assessed in the context of thermal activation, and we obtain the positions of conduction and valence band edges in the vicinity of the chemical potential. We find evidence of the closing and subsequent re-opening of the band gap with increasing pressure, which is consistent with a phase transition from weak to strong TI. This matches expectations from ab initio band structure calculations, as well as previous observations that CVT-grown ZrTe$_5$ is in a weak TI phase in ambient conditions.
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Submitted 15 December, 2023;
originally announced December 2023.
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Effects of fabrication routes and material parameters on the control of superconducting currents by gate voltage
Authors:
Leon Ruf,
Tosson Elalaily,
Claudio Puglia,
Yurii P. Ivanov,
Francois Joint,
Martin Berke,
Andrea Iorio,
Peter Makk,
Giorgio De Simoni,
Simone Gasparinetti,
Giorgio Divitini,
Szabolcs Csonka,
Francesco Giazotto,
Elke Scheer,
Angelo Di Bernardo
Abstract:
The control of a superconducting current via the application of a gate voltage has been recently demonstrated in a variety of superconducting devices. Although the mechanism underlying this gate-controlled supercurrent (GCS) effect remains under debate, the GCS effect has raised great interest for the development of the superconducting equivalent of conventional metaloxide semiconductor electronic…
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The control of a superconducting current via the application of a gate voltage has been recently demonstrated in a variety of superconducting devices. Although the mechanism underlying this gate-controlled supercurrent (GCS) effect remains under debate, the GCS effect has raised great interest for the development of the superconducting equivalent of conventional metaloxide semiconductor electronics. To date, however, the GCS effect has been mostly observed in superconducting devices made by additive patterning. Here, we show that devices made by subtractive patterning show a systematic absence of the GCS effect. Doing a microstructural analysis of these devices and comparing them to devices made by additive patterning, where we observe a GCS, we identify some material and physical parameters that are crucial for the observation of a GCS. We also show that some of the mechanisms proposed to explain the origin of the GCS effect are not universally relevant.
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Submitted 7 December, 2023; v1 submitted 14 April, 2023;
originally announced April 2023.
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Strong nonlocal tuning of the current-phase relation of a quantum dot based Andreev molecule
Authors:
Mátyás Kocsis,
Zoltán Scherübl,
Gergő Fülöp,
Péter Makk,
Szabolcs Csonka
Abstract:
Multiple systems hosting Andreev molecular states have been proposed and studied, consisting of closely spaced Josephson junctions modeled as ballistic channels. We show that replacing the ballistic channels in the weak link of the Josephson junctions with quantum dots (QD), leads to a very exciting, rich phase diagram. It shows a strong nonlocal Josephson effect: as one junction is tuned the curr…
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Multiple systems hosting Andreev molecular states have been proposed and studied, consisting of closely spaced Josephson junctions modeled as ballistic channels. We show that replacing the ballistic channels in the weak link of the Josephson junctions with quantum dots (QD), leads to a very exciting, rich phase diagram. It shows a strong nonlocal Josephson effect: as one junction is tuned the current-phase relation of the other junction is modified. This architecture hosts $0 - π$ transitions and shows a tunable anomalous phase-shift $φ_0$ , nonlocally controlled in both cases, without relying on spin-orbit interaction or Zeeman fields. In addition significant superconducting diode effect can also be observed. The presented non-local current-phase relation can be used as a signature of the formation of an Andreev molecular state, as well as to introduce new ways to tune quantum architectures.
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Submitted 17 January, 2024; v1 submitted 26 March, 2023;
originally announced March 2023.
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Stabilizing the inverted phase of a WSe$_2$/BLG/WSe$_2$ heterostructure via hydrostatic pressure
Authors:
Máté Kedves,
Bálint Szentpéteri,
Albin Márffy,
Endre Tóvári,
Nikos Papadopoulos,
Prasanna K. Rout,
Kenji Watanabe,
Takashi Taniguchi,
Srijit Goswami,
Szabolcs Csonka,
Péter Makk
Abstract:
Bilayer graphene (BLG) was recently shown to host a band-inverted phase with unconventional topology emerging from the Ising-type spin--orbit interaction (SOI) induced by the proximity of transition metal dichalcogenides with large intrinsic SOI. Here, we report the stabilization of this band-inverted phase in BLG symmetrically encapsulated in tungsten-diselenide (WSe$_2$) via hydrostatic pressure…
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Bilayer graphene (BLG) was recently shown to host a band-inverted phase with unconventional topology emerging from the Ising-type spin--orbit interaction (SOI) induced by the proximity of transition metal dichalcogenides with large intrinsic SOI. Here, we report the stabilization of this band-inverted phase in BLG symmetrically encapsulated in tungsten-diselenide (WSe$_2$) via hydrostatic pressure. Our observations from low temperature transport measurements are consistent with a single particle model with induced Ising SOI of opposite sign on the two graphene layers. To confirm the strengthening of the inverted phase, we present thermal activation measurements and show that the SOI-induced band gap increases by more than 100% due to the applied pressure. Finally, the investigation of Landau level spectra reveals the dependence of the level-crossings on the applied magnetic field, which further confirms the enhancement of SOI with pressure.
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Submitted 22 March, 2023;
originally announced March 2023.
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Gate-control of superconducting current: mechanisms, parameters and technological potential
Authors:
Leon Ruf,
Claudio Puglia,
Tosson Elalaily,
Giorgio De Simoni,
Francois Joint,
Martin Berke,
Jennifer Koch,
Andrea Iorio,
Sara Khorshidian,
Peter Makk,
Simone Gasparinetti,
Szabolcs Csonka,
Wolfgang Belzig,
Mario Cuoco,
Francesco Giazotto,
Elke Scheer,
Angelo Di Bernardo
Abstract:
In conventional metal-oxide semiconductor (CMOS) electronics, the logic state of a device is set by a gate voltage (VG). The superconducting equivalent of such effect had remained unknown until it was recently shown that a VG can tune the superconducting current (supercurrent) flowing through a nanoconstriction in a superconductor. This gate-controlled supercurrent (GCS) effect can lead to superco…
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In conventional metal-oxide semiconductor (CMOS) electronics, the logic state of a device is set by a gate voltage (VG). The superconducting equivalent of such effect had remained unknown until it was recently shown that a VG can tune the superconducting current (supercurrent) flowing through a nanoconstriction in a superconductor. This gate-controlled supercurrent (GCS) effect can lead to superconducting logics like CMOS logics, but with lower energy dissipation. The physical mechanism underlying the GCS effect, however, remains under debate. In this review article, we illustrate the main mechanisms proposed for the GCS effect, and the material and device parameters that mostly affect it based on the evidence reported. We will come to the conclusion that different mechanisms are at play in the different studies reported so far. We then outline studies that can help answer open questions on the effect and achieve control over it, which is key for applications. We finally give insights into the impact that the GCS effect can have towards high-performance computing with low-energy dissipation and quantum technologies.
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Submitted 28 February, 2024; v1 submitted 27 February, 2023;
originally announced February 2023.
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Signatures of gate-driven out of equilibrium superconductivity in Ta/InAs nanowires
Authors:
Tosson Elalaily,
Martin Berke,
Máté Kedves,
Gergő Fülöp,
Zoltán Scherübl,
Thomas Kanne,
Jesper Nygård,
Péter Makk,
Szabolcs Csonka
Abstract:
Understanding the microscopic origin of the gate-controlled supercurrent (GCS) in superconducting nanobridges is crucial for engineering superconducting switches suitable for a variety of electronic applications. The origin of GCS is controversial, and various mechanisms have been proposed to explain it. In this work, we have investigated the GCS in a Ta layer deposited on the surface of InAs nano…
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Understanding the microscopic origin of the gate-controlled supercurrent (GCS) in superconducting nanobridges is crucial for engineering superconducting switches suitable for a variety of electronic applications. The origin of GCS is controversial, and various mechanisms have been proposed to explain it. In this work, we have investigated the GCS in a Ta layer deposited on the surface of InAs nanowires. Comparison between switching current distributions at opposite gate polarities and between the gate dependence of two opposite side gates with different nanowire$-$gate spacings shows that the GCS is determined by the power dissipated by the gate leakage. We also found a substantial difference between the influence of the gate and elevated bath temperature on the magnetic field dependence of the supercurrent. Detailed analysis of the switching dynamics at high gate voltages shows that the device is driven into the multiple phase slips regime by high-energy fluctuations arising from the leakage current.
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Submitted 30 October, 2022;
originally announced October 2022.
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Revealing the band structure of ZrTe$_5$ using Multicarrier Transport
Authors:
Zoltán Kovács-Krausz,
Endre Tóvári,
Dániel Nagy,
Albin Márffy,
Bogdan Karpiak,
Zoltán Tajkov,
László Oroszlány,
János Koltai,
Péter Nemes-Incze,
Saroj Dash,
Péter Makk,
Szabolcs Csonka
Abstract:
The layered material ZrTe$_5$ appears to exhibit several exotic behaviors which resulted in significant interest recently, although the exact properties are still highly debated. Among these we find a Dirac/Weyl semimetallic behavior, nontrivial spin textures revealed by low temperature transport, and a potential weak or strong topological phase. The anomalous behavior of resistivity has been rece…
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The layered material ZrTe$_5$ appears to exhibit several exotic behaviors which resulted in significant interest recently, although the exact properties are still highly debated. Among these we find a Dirac/Weyl semimetallic behavior, nontrivial spin textures revealed by low temperature transport, and a potential weak or strong topological phase. The anomalous behavior of resistivity has been recently elucidated as originating from band shifting in the electronic structure. Our work examines magnetotransport behavior in ZrTe$_5$ samples in the context of multicarrier transport. The results, in conjunction with ab-initio band structure calculations, indicate that many of the transport features of ZrTe$_5$ across the majority of the temperature range can be adequately explained by the semiclassical multicarrier transport model originating from a complex Fermi surface.
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Submitted 19 January, 2023; v1 submitted 14 September, 2022;
originally announced September 2022.
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Near-surface InAs 2DEG on a GaAs substrate: characterization and superconducting proximity effect
Authors:
Máté Sütő,
Tamás Prok,
Péter Makk,
Magdhi Kirti,
Giorgio Biasiol,
Szabolcs Csonka,
Endre Tóvári
Abstract:
We have studied a near-surface two-dimensional electron gas based on an InAs quantum well on a GaAs substrate. In devices without a dielectric layer we estimated large electron mobilities on the order of $10^5$ cm$^2$/Vs. We have observed quantized conductance in a quantum point contact, and determined the g-factor. Using samples with an epitaxial Al layer, we defined multiple Josephson junctions…
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We have studied a near-surface two-dimensional electron gas based on an InAs quantum well on a GaAs substrate. In devices without a dielectric layer we estimated large electron mobilities on the order of $10^5$ cm$^2$/Vs. We have observed quantized conductance in a quantum point contact, and determined the g-factor. Using samples with an epitaxial Al layer, we defined multiple Josephson junctions and found the critical current to be gate tunable. Based on multiple Andreev reflections the semiconductor-superconductor interface is transparent, with an induced gap of 125 $μ$eV. Our results demonstrate the viability of this platform for hybrid topological superconductor devices.
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Submitted 17 March, 2023; v1 submitted 22 June, 2022;
originally announced June 2022.
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Parallel InAs nanowires for Cooper pair splitters with Coulomb repulsion
Authors:
Olivér Kürtössy,
Zoltán Scherübl,
Gergő Fülöp,
István Endre Lukács,
Thomas Kanne,
Jesper Nygård,
Péter Makk,
Szabolcs Csonka
Abstract:
Hybrid nanostructures consisting of two parallel InAs nanowires connected by an epitaxially grown superconductor (SC) shell recently became available. Due to the defect-free SC-semiconductor interface and the two quasi-one-dimensional channels being close by, these novel platforms can be utilized to spatially separate entangled pairs of electrons by using quantum dots (QD) in the so-called Cooper…
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Hybrid nanostructures consisting of two parallel InAs nanowires connected by an epitaxially grown superconductor (SC) shell recently became available. Due to the defect-free SC-semiconductor interface and the two quasi-one-dimensional channels being close by, these novel platforms can be utilized to spatially separate entangled pairs of electrons by using quantum dots (QD) in the so-called Cooper pair splitting (CPS) process. The minimized distance between the QDs overcomes the limitations of single-wire-based geometries and can boost the splitting efficiency. Here we investigate CPS in such a device, for the first time, where strong inter-dot Coulomb repulsion is also present and studied thoroughly. We analyze theoretically the slight reduction of the CPS efficiency imposed by the Coulomb interaction and compare it to the experiments. Despite the competition between crossed Andreev reflection (CAR) and inter-wire capacitance, a significant CPS signal is observed indicating the dominance of the superconducting coupling. Our results demonstrate that the application of parallel InAs nanowires with epitaxial SC is a promising route for the realization of parafermionic states relying on enhanced CAR between the wires.
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Submitted 27 March, 2022;
originally announced March 2022.
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From Cooper pair splitting to the non-local spectroscopy of a Shiba state
Authors:
Zoltán Scherübl,
Gergő Fülöp,
Jörg Gramich,
András Pályi,
Christian Schönenberger,
Jesper Nygård,
Szabolcs Csonka
Abstract:
Cooper pair splitting (CPS) is a way to create spatially separated, entangled electron pairs. To this day, CPS is often identified in experiments as a spatial current correlation. However, such correlations can arise even in the absence of CPS, when a quantum dot is strongly coupled to the superconductor, and a subgap Shiba state is formed. Here, we present a detailed experimental characterization…
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Cooper pair splitting (CPS) is a way to create spatially separated, entangled electron pairs. To this day, CPS is often identified in experiments as a spatial current correlation. However, such correlations can arise even in the absence of CPS, when a quantum dot is strongly coupled to the superconductor, and a subgap Shiba state is formed. Here, we present a detailed experimental characterization of those spatial current correlations, as the tunnel barrier strength between the quantum dot and the neighboring normal electrode is tuned. The correlation of the non-local signal and the barrier strength reveals a competition between CPS and the non-local probing of the Shiba state. We describe our experiment with a simple transport model, and obtain the tunnel couplings of our device by fitting the model's prediction to the measured conductance correlation curve. Furthermore, we use our theory to extract the contribution of CPS to the non-local signal.
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Submitted 27 August, 2021;
originally announced August 2021.
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Tailoring the band structure of twisted double bilayer graphene with pressure
Authors:
Bálint Szentpéteri,
Peter Rickhaus,
Folkert K. de Vries,
Albin Márffy,
Bálint Fülöp,
Endre Tóvári,
Kenji Watanabe,
Takashi Taniguchi,
Andor Kormányos,
Szabolcs Csonka,
Péter Makk
Abstract:
Twisted two-dimensional structures open new possibilities in band structure engineering. At magic twist angles, flat bands emerge, which give a new drive to the field of strongly correlated physics. In twisted double bilayer graphene dual gating allows changing the Fermi level and hence the electron density and also allows tuning the interlayer potential, giving further control over band gaps. Her…
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Twisted two-dimensional structures open new possibilities in band structure engineering. At magic twist angles, flat bands emerge, which give a new drive to the field of strongly correlated physics. In twisted double bilayer graphene dual gating allows changing the Fermi level and hence the electron density and also allows tuning the interlayer potential, giving further control over band gaps. Here, we demonstrate that by applying hydrostatic pressure, an additional control of the band structure becomes possible due to the change of tunnel couplings between the layers. We find that the flat bands and the gaps separating them can be drastically changed by pressures up to 2 GPa, in good agreement with our theoretical simulations. Furthermore, our measurements suggest that in finite magnetic field due to pressure a topologically non-trivial band gap opens at the charge neutrality point at zero displacement field.
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Submitted 30 October, 2021; v1 submitted 17 August, 2021;
originally announced August 2021.
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Gate-controlled supercurrent in epitaxial Al/InAs nanowires
Authors:
Tosson Elalaily,
Olivér Kürtössy,
Zoltán Scherübl,
Martin Berke,
Gergő Fülöp,
István Endre Lukács,
Thomas Kanne,
Jesper Nygård,
Kenji Watanabe,
Takashi Taniguchi,
Péter Makk,
Szabolcs Csonka
Abstract:
Gate-controlled supercurrent (GCS) in superconductor nanobridges has recently attracted attention as a means to create superconducting field effect transistors. Despite the clear advantage for applications with low power consumption and high switching speeds, the microscopic mechanism of the field effect is still under debate. In this work, we realize GCS for the first time in an epitaxial superco…
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Gate-controlled supercurrent (GCS) in superconductor nanobridges has recently attracted attention as a means to create superconducting field effect transistors. Despite the clear advantage for applications with low power consumption and high switching speeds, the microscopic mechanism of the field effect is still under debate. In this work, we realize GCS for the first time in an epitaxial superconductor, which is created as a shell on an InAs nanowire. We show that the supercurrent in the epitaxial Al layer can be switched to the normal state by applying $\simeq\pm$ 23$\,$V on a bottom gate insulated from the nanowire by a crystalline hBN layer. Our extensive study on the temperature and magnetic field dependencies of GCS suggests that hot electron injection alone cannot explain our experimental findings.
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Submitted 21 June, 2021; v1 submitted 11 June, 2021;
originally announced June 2021.
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Large voltage-tunable spin valve based on a double quantum dot
Authors:
Patrycja Tulewicz,
Kacper Wrzesniewski,
Szabolcs Csonka,
Ireneusz Weymann
Abstract:
We study the spin-dependent transport properties of a spin valve based on a double quantum dot. Each quantum dot is assumed to be strongly coupled to its own ferromagnetic lead, while the coupling between the dots is relatively weak. The current flowing through the system is determined within the perturbation theory in the hop** between the dots, whereas the spectrum of a quantum dot-ferromagnet…
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We study the spin-dependent transport properties of a spin valve based on a double quantum dot. Each quantum dot is assumed to be strongly coupled to its own ferromagnetic lead, while the coupling between the dots is relatively weak. The current flowing through the system is determined within the perturbation theory in the hop** between the dots, whereas the spectrum of a quantum dot-ferromagnetic lead subsystem is determined by means of the numerical renormalization group method. The spin-dependent charge fluctuations between ferromagnets and quantum dots generate an effective exchange field, which splits the double dot levels. Such field can be controlled, separately for each quantum dot, by the gate voltages or by changing the magnetic configuration of external leads. We demonstrate that the considered double quantum dot spin valve setup exhibits enhanced magnetoresistive properties, including both normal and inverse tunnel magnetoresistance. We also show that this system allows for the generation of highly spin-polarized currents, which can be controlled by purely electrical means. The considered double quantum dot with ferromagnetic contacts can thus serve as an efficient voltage-tunable spin valve characterized by high output parameters.
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Submitted 30 March, 2021;
originally announced March 2021.
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Transport measurements on van der Waals heterostructures under pressure
Authors:
Bálint Fülöp,
Albin Márffy,
Endre Tóvári,
Máté Kedves,
Simon Zihlmann,
David Indolese,
Zoltán Kovács-Krausz,
Kenji Watanabe,
Takashi Taniguchi,
Christian Schönenberger,
István Kézsmárki,
Péter Makk,
Szabolcs Csonka
Abstract:
The interlayer coupling, which has a strong influence on the properties of van der Waals heterostructures, strongly depends on the interlayer distance. Although considerable theoretical interest has been demonstrated, experiments exploiting a variable interlayer coupling on nanocircuits are scarce due to the experimental difficulties. Here, we demonstrate a novel method to tune the interlayer coup…
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The interlayer coupling, which has a strong influence on the properties of van der Waals heterostructures, strongly depends on the interlayer distance. Although considerable theoretical interest has been demonstrated, experiments exploiting a variable interlayer coupling on nanocircuits are scarce due to the experimental difficulties. Here, we demonstrate a novel method to tune the interlayer coupling using hydrostatic pressure by incorporating van der Waals heterostructure based nanocircuits in piston-cylinder hydrostatic pressure cells with a dedicated sample holder design. This technique opens the way to conduct transport measurements on nanodevices under pressure using up to 12 contacts without constraints on the sample at fabrication level. Using transport measurements, we demonstrate that hexagonal boron nitride cap** layer provides a good protection of van der Waals heterostructures from the influence of the pressure medium, and we show experimental evidence of the influence of pressure on the interlayer coupling using weak localization measurements on a TMDC/graphene heterostructure.
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Submitted 26 March, 2021;
originally announced March 2021.
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Andreev molecule in parallel InAs nanowires
Authors:
Olivér Kürtössy,
Zoltán Scherübl,
Gergő Fülöp,
István Endre Lukács,
Thomas Kanne,
Jesper Nygård,
Péter Makk,
Szabolcs Csonka
Abstract:
Coupling individual atoms via tunneling fundamentally changes the state of matter: electrons bound to atomic cores become delocalized resulting in a change from an insulating to a metallic state, as it is well known from the canonical example of solids. A chain of atoms could lead to more exotic states if the tunneling takes place via the superconducting vacuum and can induce topologically protect…
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Coupling individual atoms via tunneling fundamentally changes the state of matter: electrons bound to atomic cores become delocalized resulting in a change from an insulating to a metallic state, as it is well known from the canonical example of solids. A chain of atoms could lead to more exotic states if the tunneling takes place via the superconducting vacuum and can induce topologically protected excitations like Majorana or parafermions. Toward the realization of such artificial chains, coupling a single atom to the superconducting vacuum is well studied, but the hybridization of two sites via the superconductor was not yet reported. The peculiar vacuum of the BCS condensate opens the way to annihilate or generate two electrons from the bulk resulting in a so-called Andreev molecular state. By employing parallel nanowires with an Al superconductor shell, two artificial atoms were created at a minimal distance with an epitaxial superconducting link between. Hybridization via the BCS vacuum was observed between the two artificial atoms for the first time, as a demonstration of an Andreev molecular state.
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Submitted 29 March, 2021; v1 submitted 25 March, 2021;
originally announced March 2021.
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Double nanowires for hybrid quantum devices
Authors:
Thomas Kanne,
Dags Olsteins,
Mikelis Marnauza,
Alexandros Vekris,
Juan Carlos Estrada Saldana,
Sara Loric,
Rasmus D. Schlosser,
Daniel Ross,
Szabolcs Csonka,
Kasper Grove-Rasmussen,
Jesper Nygård
Abstract:
Parallel one-dimensional semiconductor channels connected by a superconducting strip constitute the core platform in several recent quantum device proposals that rely e.g. on Andreev processes or topological effects. In order to realize these proposals, the actual material systems must have high crystalline purity and the coupling between the different elements should be controllable in terms of t…
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Parallel one-dimensional semiconductor channels connected by a superconducting strip constitute the core platform in several recent quantum device proposals that rely e.g. on Andreev processes or topological effects. In order to realize these proposals, the actual material systems must have high crystalline purity and the coupling between the different elements should be controllable in terms of their interfaces and geometry. We present a strategy for synthesizing double InAs nanowires by the vapor-liquid-solid mechanism using III-V molecular beam epitaxy. A superconducting layer is deposited onto nanowires without breaking vacuum, ensuring pristine interfaces between the superconductor and the two semiconductor nanowires. The method allows for a high yield of merged as well as separate parallel nanowires, with full or half-shell superconductor coatings. We demonstrate their utility in complex quantum devices by electron transport measurements.
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Submitted 25 March, 2021;
originally announced March 2021.
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Boosting proximity spin orbit coupling in graphene/WSe$_2$ heterostructures via hydrostatic pressure
Authors:
Bálint Fülöp,
Albin Márffy,
Simon Zihlmann,
Martin Gmitra,
Endre Tóvári,
Bálint Szentpéteri,
Máté Kedves,
Kenji Watanabe,
Takashi Taniguchi,
Jaroslav Fabian,
Christian Schönenberger,
Péter Makk,
Szabolcs Csonka
Abstract:
Van der Waals heterostructures composed of multiple few layer crystals allow the engineering of novel materials with predefined properties. As an example, coupling graphene weakly to materials with large spin orbit coupling (SOC) allows to engineer a sizeable SOC in graphene via proximity effects. The strength of the proximity effect depends on the overlap of the atomic orbitals, therefore, changi…
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Van der Waals heterostructures composed of multiple few layer crystals allow the engineering of novel materials with predefined properties. As an example, coupling graphene weakly to materials with large spin orbit coupling (SOC) allows to engineer a sizeable SOC in graphene via proximity effects. The strength of the proximity effect depends on the overlap of the atomic orbitals, therefore, changing the interlayer distance via hydrostatic pressure can be utilized to enhance the interlayer coupling between the layers. In this work, we report measurements on a graphene/WSe$_2$ heterostructure exposed to increasing hydrostatic pressure. A clear transition from weak localization to weak anti-localization is visible as the pressure increases, demonstrating the increase of induced SOC in graphene.
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Submitted 24 March, 2021;
originally announced March 2021.
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Robust quantum point contact operation of narrow graphene constrictions patterned by AFM cleavage lithography
Authors:
Péter Kun,
Bálint Fülöp,
Gergely Dobrik,
Péter Nemes-Incze,
István Endre Lukács,
Szabolcs Csonka,
Chanyong Hwang,
Levente Tapasztó
Abstract:
Detecting conductance quantization in graphene nanostructures turned out more challenging than expected. The observation of well-defined conductance plateaus through graphene nanoconstrictions so far has only been accessible in the highest quality suspended or h-BN encapsulated devices. However, reaching low conductance quanta in zero magnetic field, is a delicate task even with such ultra-high mo…
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Detecting conductance quantization in graphene nanostructures turned out more challenging than expected. The observation of well-defined conductance plateaus through graphene nanoconstrictions so far has only been accessible in the highest quality suspended or h-BN encapsulated devices. However, reaching low conductance quanta in zero magnetic field, is a delicate task even with such ultra-high mobility devices. Here, we demonstrate a simple AFM-based nanopatterning technique for defining graphene constrictions with high precision (down to 10 nm width) and reduced edge-roughness (+/- 1 nm). The patterning process is based on the in-plane mechanical cleavage of graphene by the AFM tip, along its high symmetry crystallographic directions. As-defined, narrow graphene constrictions with improved edge quality enable an unprecedentedly robust QPC operation, allowing the observation of conductance quantization even on standard $SiO_2/Si$ substrates, down to low conductance quanta. Conductance plateaus, were observed at $ne^2/h$, evenly spaced by $2e^2/h$ (corresponding to n = 3, 5, 7, 9, 11) in the absence of an external magnetic field, while spaced by $e^2/h$ (n = 1, 2, 3, 4, 5, 6) in 8T magnetic field.
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Submitted 8 October, 2020;
originally announced October 2020.
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Electrically Controlled Spin Injection from Giant Rashba Spin-Orbit Conductor BiTeBr
Authors:
Zoltán Kovács-Krausz,
Anamul Md Hoque,
Péter Makk,
Bálint Szentpéteri,
Mátyás Kocsis,
Bálint Fülöp,
Michael Vasilievich Yakushev,
Tatyana Vladimirovna Kuznetsova,
Oleg Evgenevich Tereshchenko,
Konstantin Aleksandrovich Kokh,
István Endre Lukács,
Takashi Taniguchi,
Kenji Watanabe,
Saroj Prasad Dash,
Szabolcs Csonka
Abstract:
Ferromagnetic materials are the widely used source of spin-polarized electrons in spintronic devices, which are controlled by external magnetic fields or spin-transfer torque methods. However, with increasing demand for smaller and faster spintronic components, utilization of spin-orbit phenomena provides promising alternatives. New materials with unique spin textures are highly desirable since al…
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Ferromagnetic materials are the widely used source of spin-polarized electrons in spintronic devices, which are controlled by external magnetic fields or spin-transfer torque methods. However, with increasing demand for smaller and faster spintronic components, utilization of spin-orbit phenomena provides promising alternatives. New materials with unique spin textures are highly desirable since all-electric creation and control of spin polarization is expected, where the strength, as well as an arbitrary orientation of the polarization, can be defined without the use of a magnetic field. In this work, we use a novel spin-orbit crystal BiTeBr for this purpose. Owning to its giant Rashba spin splitting, bulk spin polarization is created at room temperature by an electric current. Integrating BiTeBr crystal into graphene-based spin valve devices, we demonstrate for the first time that it acts as a current-controlled spin injector, opening new avenues for future spintronic applications in integrated circuits.
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Submitted 31 August, 2020;
originally announced August 2020.
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In situ tuning of symmetry-breaking induced non-reciprocity in giant-Rashba semiconductor BiTeBr
Authors:
Mátyás Kocsis,
Oleksandr Zheliuk,
Péter Makk,
Endre Tóvári,
Péter Kun,
Oleg Evgenevich Tereshchenko,
Konstantin Aleksandrovich Kokh,
Takashi Taniguchi,
Kenji Watanabe,
Justin Ye,
Szabolcs Csonka
Abstract:
Non-reciprocal transport, where the left to right flowing current differs from the right to left flowing one, is an unexpected phenomenon in bulk crystals. BiTeBr is a non-centrosymmetric material, with a giant Rashba spin-orbit coupling which presents this unusual effect when placed in an in-plane magnetic field. It has been shown that this effect depends strongly on the carrier density, however,…
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Non-reciprocal transport, where the left to right flowing current differs from the right to left flowing one, is an unexpected phenomenon in bulk crystals. BiTeBr is a non-centrosymmetric material, with a giant Rashba spin-orbit coupling which presents this unusual effect when placed in an in-plane magnetic field. It has been shown that this effect depends strongly on the carrier density, however, in-situ tuning has not yet been demonstrated. We developed a method where thin BiTeBr flakes are gate tuned via ionic-liquid gating through a thin protective hBN layer. Tuning the carrier density allows a more than \SI{400}{\percent} variation of the non-reciprocal response. Our study serves as a milestone on how a few-atomic-layer-thin van der Waals protection layer allows ionic gating of chemically sensitive, exotic nanocrystals.
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Submitted 17 August, 2020; v1 submitted 13 August, 2020;
originally announced August 2020.
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Probing proximity induced superconductivity in InAs nanowire using built-in barriers
Authors:
Tosson Elalaily,
Olivér Kürtössy,
Valentina Zannier,
Zoltán Scherübl,
István Endre Lukács,
Pawan Srivastava,
Francesca Rossi,
Lucia Sorba,
Szabolcs Csonka,
Péter Makk
Abstract:
Bound states in superconductor-nanowire hybrid devices play a central role, carrying informationon the ground states properties (Shiba or Andreev states) or on the topological properties of thesystem (Majorana states). The spectroscopy of such bound states relies on the formation of well-defined tunnel barriers, usually defined by gate electrodes, which results in smooth tunnel barriers.Here we us…
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Bound states in superconductor-nanowire hybrid devices play a central role, carrying informationon the ground states properties (Shiba or Andreev states) or on the topological properties of thesystem (Majorana states). The spectroscopy of such bound states relies on the formation of well-defined tunnel barriers, usually defined by gate electrodes, which results in smooth tunnel barriers.Here we used thin InP segments embedded into InAs nanowire during the growth process to forma sharp built-in tunnel barrier. Gate dependence and thermal activation measurements have beenused to confirm the presence and estimate the height of this barrier. By coupling these wires tosuperconducting electrodes we have investigated the gate voltage dependence of the induced gap inthe nanowire segment, which we could understand using a simple model based on Andreev boundstates. Our results show that these built-in barriers are promising as future spectroscopic tools
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Submitted 25 January, 2020;
originally announced January 2020.
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Magnetic degeneracy points in interacting two-spin systems: geometrical patterns, topological charge distributions, and their stability
Authors:
György Frank,
Zoltán Scherübl,
Szabolcs Csonka,
Gergely Zaránd,
András Pályi
Abstract:
Spectral degeneracies of quantum magnets are often described as diabolical points or magnetic Weyl points, which carry topological charge. Here, we study a simple, yet experimentally relevant quantum magnet: two localized interacting electrons subject to spin-orbit coupling. In this setting, the degeneracies are not necessarily isolated points, but can also form a line or a surface. We identify te…
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Spectral degeneracies of quantum magnets are often described as diabolical points or magnetic Weyl points, which carry topological charge. Here, we study a simple, yet experimentally relevant quantum magnet: two localized interacting electrons subject to spin-orbit coupling. In this setting, the degeneracies are not necessarily isolated points, but can also form a line or a surface. We identify ten different possible geometrical patterns formed by these degeneracy points, and study their stability under small perturbations of the Hamiltonian. Stable structures are found to depend on the relative sign of the determinants of the two $g$-tensors, $\cal S$. Both for ${\cal S}=+1$ and ${\cal S}=-1$, two stable configurations are found, and three out of these four configurations are formed by pairs of Weyl points. These stable regions are separated by a surface of almost stable configurations, with a structure akin to co-dimension one bifurcations.
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Submitted 7 October, 2019;
originally announced October 2019.
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Large spatial extension of the zero-energy Yu-Shiba-Rusinov state in magnetic field
Authors:
Zoltán Scherübl,
Gergő Fülöp,
Cătălin Paşcu Moca,
Jörg Gramich,
Andreas Baumgartner,
Péter Makk,
Tosson Elalaily,
Christian Schönenberger,
Jesper Nygård,
Gergely Zaránd,
Szabolcs Csonka
Abstract:
Various promising qubit concepts have been put forward recently based on engineered superconductor (SC) subgap states like Andreev bound states, Majorana zero modes or the Yu-Shiba-Rusinov (Shiba) states. The coupling of these subgap states via a SC strongly depends on their spatial extension and is an essential next step for future quantum technologies. Here we investigate the spatial extension o…
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Various promising qubit concepts have been put forward recently based on engineered superconductor (SC) subgap states like Andreev bound states, Majorana zero modes or the Yu-Shiba-Rusinov (Shiba) states. The coupling of these subgap states via a SC strongly depends on their spatial extension and is an essential next step for future quantum technologies. Here we investigate the spatial extension of a Shiba state in a semiconductor quantum dot coupled to a SC for the first time. With detailed transport measurements and numerical renormalization group calculations we find a remarkable more than 50 nm extension of the zero energy Shiba state, much larger than the one observed in very recent scanning tunneling microscopy (STM) measurements. Moreover, we demonstrate that its spatial extension increases substantially in magnetic field.
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Submitted 13 January, 2020; v1 submitted 20 June, 2019;
originally announced June 2019.
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Transport signatures of an Andreev molecule in a quantum dot -- superconductor -- quantum dot setup
Authors:
Zoltán Scherübl,
András Pályi,
Szabolcs Csonka
Abstract:
Hybrid devices combining quantum dots with superconductors are important building blocks of conventional and topological quantum-information experiments. A requirement for the success of such experiments is to understand the various tunneling-induced non-local interaction mechanisms, namely, crossed Andreev reflection, elastic cotunneling, and direct interdot tunneling, that are present in the dev…
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Hybrid devices combining quantum dots with superconductors are important building blocks of conventional and topological quantum-information experiments. A requirement for the success of such experiments is to understand the various tunneling-induced non-local interaction mechanisms, namely, crossed Andreev reflection, elastic cotunneling, and direct interdot tunneling, that are present in the device. Here, we provide a theoretical study of a simple device which consists of two quantum dots and a superconductor tunnel-coupled to the dots, often called a Cooper-pair splitter. We study the three special cases where one of the three non-local mechanisms dominates, and calculate measurable ground-state properties, as well as the zero-bias and finite-bias differential conductance characterizing electron transport through this device. We describe how each non-local mechanism controls the measurable quantities, and thereby find experimental fingerprints that allow one to identify and quantify the dominant non-local mechanism using experimental data. Finally, we study the triplet blockade effect and the associated negative differential conductance in the Cooper-pair splitter, and show that they can arise regardless of the nature of the dominant non-local coupling mechanism. Our results should facilitate the characterization of hybrid devices, and their optimization for various quantum-information-related experiments and applications.
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Submitted 8 October, 2018; v1 submitted 4 October, 2018;
originally announced October 2018.
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Observation of spin-orbit coupling induced Weyl points and topologically protected Kondo effect in a two-electron double quantum dot
Authors:
Zoltán Scherübl,
András Pályi,
György Frank,
István Lukács,
Gergő Fülöp,
Bálint Fülöp,
Jesper Nygård,
Kenji Watanabe,
Takashi Taniguchi,
Gergely Zaránd,
Szabolcs Csonka
Abstract:
Recent years have brought an explosion of activities in the research of topological aspects of condensed-matter systems. Topologically non-trivial phases of matter are typically accompanied by protected surface states or exotic degenerate excitations such as Majorana end states or Haldane's localized spinons. Topologically protected degeneracies can, however, also appear in the bulk. An intriguing…
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Recent years have brought an explosion of activities in the research of topological aspects of condensed-matter systems. Topologically non-trivial phases of matter are typically accompanied by protected surface states or exotic degenerate excitations such as Majorana end states or Haldane's localized spinons. Topologically protected degeneracies can, however, also appear in the bulk. An intriguing example is provided by Weyl semimetals, where topologically protected electronic band degeneracies and exotic surface states emerge even in the absence of interactions. Here we demonstrate experimentally and theoretically that Weyl degeneracies appear naturally in an interacting quantum dot system, for specific values of the external magnetic field. These magnetic Weyl points are robust against spin-orbit coupling unavoidably present in most quantum dot devices. Our transport experiments through an InAs double dot device placed in magnetic field reveal the presence of a pair of Weyl points, exhibiting a robust ground state degeneracy and a corresponding protected Kondo effect.
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Submitted 17 April, 2018;
originally announced April 2018.
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Exfoliation of single layer BiTeI flakes
Authors:
Bálint Fülöp,
Zoltán Tajkov,
János Pető,
Péter Kun,
János Koltai,
László Oroszlány,
Endre Tóvári,
Hiroshi Murakawa,
Yoshinori Tokura,
Sándor Bordács,
Levente Tapasztó,
Szabolcs Csonka
Abstract:
Spin orbit interaction can be strongly boosted when a heavy element is embedded into an inversion asymmetric crystal field. A simple structure to realize this concept in a 2D crystal contains three atomic layers, a middle one built up from heavy elements generating strong atomic spin-orbit interaction and two neighboring atomic layers with different electron negativity. BiTeI is a promising candid…
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Spin orbit interaction can be strongly boosted when a heavy element is embedded into an inversion asymmetric crystal field. A simple structure to realize this concept in a 2D crystal contains three atomic layers, a middle one built up from heavy elements generating strong atomic spin-orbit interaction and two neighboring atomic layers with different electron negativity. BiTeI is a promising candidate for such a 2D crystal, since it contains heavy Bi layer between Te and I layers. Recently the bulk form of BiTeI attracted considerable attention due to its giant Rashba interaction, however, 2D form of this crystal was not yet created. In this work we report the first exfoliation of single layer BiTeI using a recently developed exfoliation technique on stripped gold. Our combined scanning probe studies and first principles calculations show that SL BiTeI flakes with sizes of 100 $μ$m were achieved which are stable at ambient conditions. The giant Rashba splitting and spin-momentum locking of this new member of 2D crystals open the way towards novel spintronic applications and synthetic topological heterostructures.
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Submitted 27 September, 2017;
originally announced September 2017.
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Gate-controlled conductance enhancement from quantum Hall channels along graphene p-n junctions
Authors:
Endre Tóvári,
Péter Makk,
Ming-Hao Liu,
Peter Rickhaus,
Zoltán Kovács-Krausz,
Klaus Richter,
Christian Schönenberger,
Szabolcs Csonka
Abstract:
The formation of quantum Hall channels inside the bulk of graphene is studied using various contact and gate geometries. p-n junctions are created along the longitudinal direction of samples, and enhanced conductance is observed in the case of bipolar do** due to new conducting channels forming in the bulk, whose position, propagating direction and, in one geometry, coupling to electrodes are de…
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The formation of quantum Hall channels inside the bulk of graphene is studied using various contact and gate geometries. p-n junctions are created along the longitudinal direction of samples, and enhanced conductance is observed in the case of bipolar do** due to new conducting channels forming in the bulk, whose position, propagating direction and, in one geometry, coupling to electrodes are determined by the gate-controlled filling factor across the device. This effect could be exploited to probe the behavior and interaction of quantum Hall channels protected against uncontrolled scattering at the edges.
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Submitted 26 June, 2016;
originally announced June 2016.
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Pulling Platinum Atomic Chains by Carbon Monoxide Molecules
Authors:
Péter Makk,
Zoltán Balogh,
Szabolcs Csonka,
András Halbritter
Abstract:
The interaction of carbon monoxide molecules with atomic-scale platinum nanojunctions is investigated by low temperature mechanically controllable break junction experiments. Combining plateaus' length analysis, two dimensional conductance-displacement histograms and conditional correlation analysis a comprehensive microscopic picture is proposed about the formation and evolution of Pt-CO-Pt singl…
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The interaction of carbon monoxide molecules with atomic-scale platinum nanojunctions is investigated by low temperature mechanically controllable break junction experiments. Combining plateaus' length analysis, two dimensional conductance-displacement histograms and conditional correlation analysis a comprehensive microscopic picture is proposed about the formation and evolution of Pt-CO-Pt single-molecule configurations. Our analysis implies that before pure Pt monoatomic chains would be formed a CO molecule infiltrates the junction, first in a configuration being perpendicular to the contact axis. This molecular junction is strong enough to pull a monoatomic platinum chain with the molecule being incorporated in the chain. Along the chain formation the molecule can either stay in the perpendicular configuration, or rotate to a parallel configuration. The evolution of the single-molecule configurations along the junction displacement shows quantitative agreement with theoretical predictions, justifying the interpretation in terms of perpendicular and parallel molecular alignment. Our analysis demonstrates that the combination of two dimensional conductance-displacement histograms with conditional correlation analysis is a useful tool to separately analyze fundamentally different types of junction trajectories in single molecule break junction experiments.
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Submitted 18 January, 2016;
originally announced January 2016.
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Electrical tuning of Rashba spin-orbit interaction in multigated InAs nanowires
Authors:
Zoltán Scherübl,
Gergő Fülöp,
Morten Hannibal Madsen,
Jesper Nygård,
Szabolcs Csonka
Abstract:
Indium arsenide (InAs) nanowires (NWs) are a promising platform to fabricate quantum electronic devices, among others they have strong spin-orbit interaction (SOI). The controlled tuning of the SOI is desired in spin based quantum devices. In this study we investigate the possibility of tuning the SOI by electrostatic field, which is generated by a back gate and two side gates placed on the opposi…
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Indium arsenide (InAs) nanowires (NWs) are a promising platform to fabricate quantum electronic devices, among others they have strong spin-orbit interaction (SOI). The controlled tuning of the SOI is desired in spin based quantum devices. In this study we investigate the possibility of tuning the SOI by electrostatic field, which is generated by a back gate and two side gates placed on the opposite sides of the NW. The strength of the SOI is analyzed by weak anti-localization effect. We demonstrate that the strength of SOI can be strongly tuned by a factor of 2 with the electric field across the NW, while the average electron density is kept constant. Furthermore a simple electrostatic model is introduced to calculate the expected change of SOI. Good agreement is found between the experimental results and the estimated Rashba type SOI generated by the gate-induced electric field.
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Submitted 8 January, 2016;
originally announced January 2016.
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Signatures of single quantum dots in graphene nanoribbons within the quantum Hall regime
Authors:
E. Tóvári,
P. Makk,
P. Rickhaus,
C. Schönenberger,
S. Csonka
Abstract:
We report on the observation of periodic conductance oscillations near quantum Hall plateaus in suspended graphene nanoribbons. They are attributed to single quantum dots that form in the narrowest part of the ribbon, in the valleys and hills of a disorder potential. In a wide flake with two gates, a double-dot system's signature has been observed. Electrostatic confinement is enabled in single-la…
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We report on the observation of periodic conductance oscillations near quantum Hall plateaus in suspended graphene nanoribbons. They are attributed to single quantum dots that form in the narrowest part of the ribbon, in the valleys and hills of a disorder potential. In a wide flake with two gates, a double-dot system's signature has been observed. Electrostatic confinement is enabled in single-layer graphene due to the gaps that form between Landau levels, suggesting a way to create gate-defined quantum dots that can be accessed with quantum Hall edge states.
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Submitted 7 January, 2016;
originally announced January 2016.
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Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts
Authors:
G. Fülöp,
S. d'Hollosy,
L. Hofstetter,
A. Baumgartner,
J. Nygård,
C. Schönenberger,
S. Csonka
Abstract:
Advanced synthesis of semiconductor nanowires (NWs) enables their application in diverse fields, notably in chemical and electrical sensing, photovoltaics, or quantum electronic devices. In particular, Indium Arsenide (InAs) NWs are an ideal platform for quantum devices, e.g. they may host topological Majorana states. While the synthesis has been continously perfected, only few techniques were dev…
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Advanced synthesis of semiconductor nanowires (NWs) enables their application in diverse fields, notably in chemical and electrical sensing, photovoltaics, or quantum electronic devices. In particular, Indium Arsenide (InAs) NWs are an ideal platform for quantum devices, e.g. they may host topological Majorana states. While the synthesis has been continously perfected, only few techniques were developed to tailor individual NWs after growth. Here we present three wet chemical etch methods for the post-growth morphological engineering of InAs NWs on the sub-100 nm scale. The first two methods allow the formation of self-aligned electrical contacts to etched NWs, while the third method results in conical shaped NW profiles ideal for creating smooth electrical potential gradients and shallow barriers. Low temperature experiments show that NWs with etched segments have stable transport characteristics and can serve as building blocks of quantum electronic devices. As an example we report the formation of a single electrically stable quantum dot between two etched NW segments.
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Submitted 7 January, 2016;
originally announced January 2016.
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Point contacts in encapsulated graphene
Authors:
Clevin Handschin,
Balint Fülöp,
Péter Makk,
Sofya Blanter,
Markus Weiss,
K. Watanabe,
T. Taniguchi,
Szabolcs Csonka,
Christian Schönenberger
Abstract:
We present a novel method to establish inner point contacts on hexagonal boron nitride (hBN) encapsulated graphene heterostructures with dimensions as small as 100 nm by pre-patterning the top-hBN in a separate step prior to dry-stacking. 2 and 4-terminal field effect measurements between different lead combinations are in qualitative agreement with an electrostatic model assuming pointlike contac…
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We present a novel method to establish inner point contacts on hexagonal boron nitride (hBN) encapsulated graphene heterostructures with dimensions as small as 100 nm by pre-patterning the top-hBN in a separate step prior to dry-stacking. 2 and 4-terminal field effect measurements between different lead combinations are in qualitative agreement with an electrostatic model assuming pointlike contacts. The measured contact resistances are 0.5-1.5 k$Ω$ per contact, which is quite low for such small contacts. By applying a perpendicular magnetic fields, an insulating behaviour in the quantum Hall regime was observed, as expected for inner contacts. The fabricated contacts are compatible with high mobility graphene structures and open up the field for the realization of several electron optical proposals.
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Submitted 14 September, 2015;
originally announced September 2015.
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Magnetic field tuning and quantum interference in a Cooper pair splitter
Authors:
G. Fülöp,
F. Domínguez,
S. d'Hollosy,
A. Baumgartner,
P. Makk,
M. H. Madsen,
V. A. Guzenko,
J. Nygård,
C. Schönenberger,
A. Levy Yeyati,
S. Csonka
Abstract:
Cooper pair splitting (CPS) is a process in which the electrons of naturally occurring spin-singlet pairs in a superconductor are spatially separated using two quantum dots. Here we investigate the evolution of the conductance correlations in an InAs CPS device in the presence of an external magnetic field. In our experiments the gate dependence of the signal that depends on both quantum dots cont…
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Cooper pair splitting (CPS) is a process in which the electrons of naturally occurring spin-singlet pairs in a superconductor are spatially separated using two quantum dots. Here we investigate the evolution of the conductance correlations in an InAs CPS device in the presence of an external magnetic field. In our experiments the gate dependence of the signal that depends on both quantum dots continuously evolves from a slightly asymmetric Lorentzian to a strongly asymmetric Fano-type resonance with increasing field. These experiments can be understood in a simple three - site model, which shows that the nonlocal CPS leads to symmetric line shapes, while the local transport processes can exhibit an asymmetric shape due to quantum interference. These findings demonstrate that the electrons from a Cooper pair splitter can propagate coherently after their emission from the superconductor and how a magnetic field can be used to optimize the performance of a CPS device. In addition, the model calculations suggest that the estimate of the CPS efficiency in the experiments is a lower bound for the actual efficiency.
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Submitted 17 July, 2015; v1 submitted 3 July, 2015;
originally announced July 2015.
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Local electrical tuning of the nonlocal signals in a Cooper pair splitter
Authors:
G. Fülöp,
S. d'Hollosy,
A. Baumgartner,
P. Makk,
V. A. Guzenko,
M. H. Madsen,
J. Nygård,
C. Schönenberger,
S. Csonka
Abstract:
A Cooper pair splitter consists of a central superconducting contact, S, from which electrons are injected into two parallel, spatially separated quantum dots (QDs). This geometry and electron interactions can lead to correlated electrical currents due to the spatial separation of spin-singlet Cooper pairs from S. We present experiments on such a device with a series of bottom gates, which allows…
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A Cooper pair splitter consists of a central superconducting contact, S, from which electrons are injected into two parallel, spatially separated quantum dots (QDs). This geometry and electron interactions can lead to correlated electrical currents due to the spatial separation of spin-singlet Cooper pairs from S. We present experiments on such a device with a series of bottom gates, which allows for spatially resolved tuning of the tunnel couplings between the QDs and the electrical contacts and between the QDs. Our main findings are gate-induced transitions between positive conductance correlation in the QDs due to Cooper pair splitting and negative correlations due to QD dynamics. Using a semi-classical rate equation model we show that the experimental findings are consistent with in-situ electrical tuning of the local and nonlocal quantum transport processes. In particular, we illustrate how the competition between Cooper pair splitting and local processes can be optimized in such hybrid nanostructures.
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Submitted 2 September, 2014;
originally announced September 2014.
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Emergence of bound states in ballistic magnetotransport of graphene antidots
Authors:
P. Rakyta,
E. Tóvári,
M. Csontos,
Sz. Csonka,
A. Csordás,
J. Cserti
Abstract:
An experimental method for detection of bound states around an antidot formed from a hole in a graphene sheet is proposed by measuring the ballistic two terminal conductances. In particularly, we consider the effect of bound states formed by magnetic field on the two terminal conductance and show that one can observe Breit-Wigner like resonances in the conductance as a function of the Fermi level…
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An experimental method for detection of bound states around an antidot formed from a hole in a graphene sheet is proposed by measuring the ballistic two terminal conductances. In particularly, we consider the effect of bound states formed by magnetic field on the two terminal conductance and show that one can observe Breit-Wigner like resonances in the conductance as a function of the Fermi level close to the energies of the bound states. In addition, we develop a new numerical method in which the computational effort is proportional to the linear dimensions, instead of the area of the scattering region beeing typical for the existing numerical recursive Green's function method.
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Submitted 25 September, 2014; v1 submitted 7 August, 2014;
originally announced August 2014.
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Probing individual split Cooper-pairs using the spin qubit toolkit
Authors:
Zoltán Scherübl,
András Pályi,
Szabolcs Csonka
Abstract:
A superconductor is a natural source of spin-entangled spatially separated electron pairs. Although the first Cooper-pair splitter devices have been realized recently, an experimental confirmation of the spin state and the entanglement of the emitted electron pairs is lacking up to now. In this paper a method is proposed to confirm the spin-singlet character of individual split Cooper pairs. Two q…
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A superconductor is a natural source of spin-entangled spatially separated electron pairs. Although the first Cooper-pair splitter devices have been realized recently, an experimental confirmation of the spin state and the entanglement of the emitted electron pairs is lacking up to now. In this paper a method is proposed to confirm the spin-singlet character of individual split Cooper pairs. Two quantum dots (QDs), each of them holding one spin-prepared electron, serve as the detector of the spin state of a single Cooper pair that is forced to split when it tunnels out from the superconductor to the QDs. The number of charges on the QDs, measured at the end of the procedure, carries information on the spin state of the extracted Cooper pair. The method relies on the experimentally established toolkit of QD-based spin qubits: resonant spin manipulation, Pauli blockade, and charge measurement.
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Submitted 7 May, 2014;
originally announced May 2014.
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Kondo effect and spin-active scattering in ferromagnet-superconductor junctions
Authors:
H. Soller,
L. Hofstetter,
S. Csonka,
A. Levy Yeyati,
C. Schönenberger,
A. Komnik
Abstract:
We study the interplay of superconducting and ferromagnetic correlations on charge transport in different geometries with a focus on both a quantum point contact as well as a quantum dot in the even and the odd state with and without spin-active scattering at the interface. In order to obtain a complete picture of the charge transport we calculate the full counting statistics in all cases and comp…
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We study the interplay of superconducting and ferromagnetic correlations on charge transport in different geometries with a focus on both a quantum point contact as well as a quantum dot in the even and the odd state with and without spin-active scattering at the interface. In order to obtain a complete picture of the charge transport we calculate the full counting statistics in all cases and compare the results with experimental data. We show that spin-active scattering is an essential ingredient in the description of quantum point contacts. This holds also for quantum dots in an even charge state whereas it is strongly suppressed in a typical Kondo situation. We explain this feature by the strong asymmetry of the hybridisations with the quantum dot and show how Kondo peak splitting in a magnetic field can be used for spin filtering. For the quantum dot in the even state spin-active scattering allows for an explanation of the experimentally observed mini-gap feature.
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Submitted 30 April, 2012;
originally announced April 2012.
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Electrically controlled quantum dot based spin current injector
Authors:
Szabolcs Csonka,
Ireneusz Weymann,
Gergely Zarand
Abstract:
We present a proposal for a fully electrically controllable quantum dot based spin current injector. The device consists of a quantum dot that is strongly coupled to a ferromagnetic electrode on one side and weakly coupled to a nonmagnetic electrode on the other side. The presence of ferromagnetic electrode results in an exchange field that splits the dot level. We show that this exchange-induced…
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We present a proposal for a fully electrically controllable quantum dot based spin current injector. The device consists of a quantum dot that is strongly coupled to a ferromagnetic electrode on one side and weakly coupled to a nonmagnetic electrode on the other side. The presence of ferromagnetic electrode results in an exchange field that splits the dot level. We show that this exchange-induced splitting can lead to almost full spin polarization of the current flowing through the device. Moreover, we also demonstrate that the sign of the polarization can be changed by the gate or the bias voltage within a switching time in the nanosecond range. Thus the proposed device can operate as an electrically controlled, fast switchable spin current source, which can be realized in various state-of-the-art nanostructures.
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Submitted 11 April, 2012;
originally announced April 2012.
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Finite bias Cooper pair splitting
Authors:
L. Hofstetter,
S. Csonka,
A. Baumgartner,
Fülöp,
S. d'Hollosy,
J. Nygård,
C. Schönenberger
Abstract:
In a device with a superconductor coupled to two parallel quantum dots (QDs) the electrical tunability of the QD levels can be used to exploit non-classical current correlations due to the splitting of Cooper pairs. We experimentally investigate the effect of a finite potential difference across one quantum dot on the conductance through the other completely grounded QD in a Cooper pair splitter f…
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In a device with a superconductor coupled to two parallel quantum dots (QDs) the electrical tunability of the QD levels can be used to exploit non-classical current correlations due to the splitting of Cooper pairs. We experimentally investigate the effect of a finite potential difference across one quantum dot on the conductance through the other completely grounded QD in a Cooper pair splitter fabricated on an InAs nanowire. We demonstrate that the electrical transport through the device can be tuned by electrical means to be dominated either by Cooper pair splitting (CPS), or by elastic co-tunneling (EC). The basic experimental findings can be understood by considering the energy dependent density of states in a QD. The reported experiments add bias-dependent spectroscopy to the investigative tools necessary to develop CPS-based sources of entangled electrons in solid-state devices.
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Submitted 12 May, 2011;
originally announced May 2011.
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Regular atomic narrowing of Ni, Fe and V nanowires resolved by 2D correlation analysis
Authors:
A. Halbritter,
P. Makk,
Sz. Mackowiak,
Sz. Csonka,
M. Wawrzyniak,
J. Martinek
Abstract:
We present a novel statistical method for the study of stable atomic configurations in breaking nanowires based on the 2D cross-correlation analysis of conductance versus electrode separation traces. Applying this method, we can clearly resolve the typical evolutions of the conductance staircase in some transition metal nanojunctions (Ni, Fe, V) up to high conductance values. In these metals our a…
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We present a novel statistical method for the study of stable atomic configurations in breaking nanowires based on the 2D cross-correlation analysis of conductance versus electrode separation traces. Applying this method, we can clearly resolve the typical evolutions of the conductance staircase in some transition metal nanojunctions (Ni, Fe, V) up to high conductance values. In these metals our analysis demonstrates a very well ordered atomic narrowing of the nanowire, indicating a very regular, stepwise decrease of the number of atoms in the minimal cross section of the junction, in contrast to the majority of the metals. All these features are hidden in traditional conductance histograms.
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Submitted 8 June, 2011; v1 submitted 9 June, 2010;
originally announced June 2010.
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Ferromagnetic proximity effect in F-QDot-S device
Authors:
L. Hofstetter,
S. Csonka,
A. Geresdi,
M. Aagesen,
J. Nygard,
C. Schonenberger
Abstract:
Ferromagnetic proximity effect is studied in InAs nanowire (NW) based quantum dots (QD) strongly coupled to a ferromagnetic (F) and a superconducting (S) lead. The influence of the F lead is detected through the splitting of the spin-1/2 Kondo resonance. We show that the F lead induces a local exchange field on the QD, which has varying amplitude and a sign depending on the charge states. The inte…
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Ferromagnetic proximity effect is studied in InAs nanowire (NW) based quantum dots (QD) strongly coupled to a ferromagnetic (F) and a superconducting (S) lead. The influence of the F lead is detected through the splitting of the spin-1/2 Kondo resonance. We show that the F lead induces a local exchange field on the QD, which has varying amplitude and a sign depending on the charge states. The interplay of the F and S correlations generates an exchange field related supgap feature. This novel mini-gap allows now the visualization of the exchange field also in even charge states
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Submitted 2 November, 2010; v1 submitted 16 October, 2009;
originally announced October 2009.
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Unexpected finite-bias visibility dependence in an electronic Mach Zehnder interferometer
Authors:
E. Bieri,
M. Weiss,
O. Goktas,
M. Hauser,
S. Csonka,
S. Oberholzer,
C. Schonenberger
Abstract:
We use an electronic Mach-Zehnder interferometer to explore the non-equilibrium coherence of the electron waves within the edge-states that form in the integral quantum Hall effect. The visibility of the interference as a function of bias-voltage and transmission probabilities of the mirrors, which are realized by quantum point-contacts, reveal an unexpected asymmetry at finite bias when the tra…
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We use an electronic Mach-Zehnder interferometer to explore the non-equilibrium coherence of the electron waves within the edge-states that form in the integral quantum Hall effect. The visibility of the interference as a function of bias-voltage and transmission probabilities of the mirrors, which are realized by quantum point-contacts, reveal an unexpected asymmetry at finite bias when the transmission probability $T$ of the mirror at the input of the interferometer is varied between 0 and 100%, while the transmission probability of the other mirror at the output is kept fixed. This can lead to the surprising result of an increasing magnitude of interference with increasing bias-voltage for certain values of $T$. A detailed analysis for various transmission probabilities and different directions of the magnetic field demonstrates that this effect is not related to the transmission characteristics of a single quantum point contact, but is an inherent property of the Mach-Zehnder interferometer with edge-states.
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Submitted 14 December, 2008;
originally announced December 2008.
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Giant fluctuations and gate control of the g-factor in InAs Nanowire Quantum Dots
Authors:
S. Csonka,
L. Hofstetter,
F. Freitag,
S. Oberholzer,
T. S. Jespersen,
M. Aagesen,
J. Nygard,
C. Schonenberger
Abstract:
We study the g-factor of discrete electron states in InAs nanowire based quantum dots. The g values are determined from the magnetic field splitting of the zero bias anomaly due to the spin 1/2-Kondo effect. Unlike to previous studies based on 2DEG quantum dots, the g-factors of neighboring electron states show a surprisingly large fluctuation: g can scatter between 2 and 18. Furthermore electri…
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We study the g-factor of discrete electron states in InAs nanowire based quantum dots. The g values are determined from the magnetic field splitting of the zero bias anomaly due to the spin 1/2-Kondo effect. Unlike to previous studies based on 2DEG quantum dots, the g-factors of neighboring electron states show a surprisingly large fluctuation: g can scatter between 2 and 18. Furthermore electric gate tunability of the g-factor is demonstrated.
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Submitted 12 August, 2008; v1 submitted 11 August, 2008;
originally announced August 2008.
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Interaction of hydrogen molecules with superconducting nanojunctions
Authors:
P. Makk,
Sz. Csonka,
A. Halbritter
Abstract:
In this paper the interaction of hydrogen molecules with atomic-sized superconducting nanojunctions is studied. It is demonstrated by conductance histogram measurements that the superconductors niobium, tantalum and aluminum show a strong interaction with hydrogen, whereas for lead a slight interaction is observed, and for tin and indium no significant interaction is detectable. For Nb, Ta and P…
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In this paper the interaction of hydrogen molecules with atomic-sized superconducting nanojunctions is studied. It is demonstrated by conductance histogram measurements that the superconductors niobium, tantalum and aluminum show a strong interaction with hydrogen, whereas for lead a slight interaction is observed, and for tin and indium no significant interaction is detectable. For Nb, Ta and Pb subgap method is applied to determine the transmission eigenvalues of the nanojunctions in hydrogen environment. It is shown, that in Nb and Ta the mechanical behavior of the junction is spectacularly influenced by hydrogen reflected by extremely long conductance traces, but the electronic properties based on the transmission eigenvalues are similar to those of pure junctions. Evidences for the formation of a single-molecule bridge between the electrodes -- as in recently studied platinum hydrogen system -- were not found.
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Submitted 10 February, 2008;
originally announced February 2008.
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Nanoscale spin-polarization in dilute magnetic semiconductor (In,Mn)Sb
Authors:
A. Geresdi,
A. Halbritter,
M. Csontos,
Sz. Csonka,
G. Mihaly,
T. Wojtowicz,
X. Liu,
B. Janko,
J. K. Furdyna
Abstract:
Results of point contact Andreev reflection (PCAR) experiments on (In,Mn)Sb are presented and analyzed in terms of current models of charge conversion at a superconductor-ferromagnet interface. We investigate the influence of surface transparency, and study the crossover from ballistic to diffusive transport regime as contact size is varied. Application of a Nb tip to a (In,Mn)Sb sample with Cur…
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Results of point contact Andreev reflection (PCAR) experiments on (In,Mn)Sb are presented and analyzed in terms of current models of charge conversion at a superconductor-ferromagnet interface. We investigate the influence of surface transparency, and study the crossover from ballistic to diffusive transport regime as contact size is varied. Application of a Nb tip to a (In,Mn)Sb sample with Curie temperature Tc of 5.4 K allowed the determination of spin-polarization when the ferromagnetic phase transition temperature is crossed. We find a striking difference between the temperature dependence of the local spin polarization and of the macroscopic magnetization, and demonstrate that nanoscale clusters with magnetization close to the saturated value are present even well above the magnetic phase transition temperature.
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Submitted 9 January, 2008;
originally announced January 2008.
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Huge negative differential conductance in Au-H2 molecular nanojunctions
Authors:
A. Halbritter,
P. Makk,
Sz. Csonka,
G. Mihaly
Abstract:
Experimental results showing huge negative differential conductance in gold-hydrogen molecular nanojunctions are presented. The results are analyzed in terms of two-level system (TLS) models: it is shown that a simple TLS model cannot produce peaklike structures in the differential conductance curves, whereas an asymmetrically coupled TLS model gives perfect fit to the data. Our analysis implies…
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Experimental results showing huge negative differential conductance in gold-hydrogen molecular nanojunctions are presented. The results are analyzed in terms of two-level system (TLS) models: it is shown that a simple TLS model cannot produce peaklike structures in the differential conductance curves, whereas an asymmetrically coupled TLS model gives perfect fit to the data. Our analysis implies that the excitation of a bound molecule to a large number of energetically similar loosely bound states is responsible for the peaklike structures. Recent experimental studies showing related features are discussed within the framework of our model.
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Submitted 19 February, 2008; v1 submitted 14 June, 2007;
originally announced June 2007.