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Instability of the topological surface state in Bi$_2$Se$_3$ upon deposition of gold
Authors:
A. Polyakov,
C. Tusche,
M. Ellguth,
E. D. Crozier,
K. Mohseni,
M. M. Otrokov,
X. Zubizarreta,
M. G. Vergniory,
M. Geilhufe,
E. V. Chulkov,
A. Ernst,
H. L. Meyerheim,
S. S. P. Parkin
Abstract:
Momentum resolved photoemission spectroscopy indicates the instability of the Dirac surface state upon deposition of gold on the (0001) surface of the topological insulator Bi$_2$Se$_3$. Based on the structure model derived from extended x-ray absorption fine structure experiments showing that gold atoms substitute bismuth atoms, first principles calculations provide evidence that a gap appears du…
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Momentum resolved photoemission spectroscopy indicates the instability of the Dirac surface state upon deposition of gold on the (0001) surface of the topological insulator Bi$_2$Se$_3$. Based on the structure model derived from extended x-ray absorption fine structure experiments showing that gold atoms substitute bismuth atoms, first principles calculations provide evidence that a gap appears due to hybridization of the surface state with gold d-states near the Fermi level. Our findings provide new insights into the mechanisms affecting the stability of the surface state.
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Submitted 10 September, 2018;
originally announced September 2018.
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Surfactant mediated growth of ferromagnetic Mn δ-doped Si
Authors:
S. Kahwaji,
R. A. Gordon,
E. D. Crozier,
S. Roorda,
M. D. Robertson,
J. Zhu,
T. L. Monchesky
Abstract:
We present an investigation of Mn δ-doped layers in Si(001) grown by molecular beam epitaxy. We discovered that a Pb surfactant has significant effect on the structural and magnetic properties of the submonolayer of Mn, which depends on the Si cap** layer growth temperature, T_Si, and the Mn coverage, θ_Mn. The results presented in this paper identify three regions in the growth-phase-diagram ch…
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We present an investigation of Mn δ-doped layers in Si(001) grown by molecular beam epitaxy. We discovered that a Pb surfactant has significant effect on the structural and magnetic properties of the submonolayer of Mn, which depends on the Si cap** layer growth temperature, T_Si, and the Mn coverage, θ_Mn. The results presented in this paper identify three regions in the growth-phase-diagram characterized by distinct magnetic behaviors and crystal structures. In one region, X-ray absorption fine structure (XAFS) and transmission electron microscopy (TEM) experiments indicate that MnSi nanocrystallites form with B2-like crystal type structures. At the optimal growth conditions, T_Si = 200 C and θ_Mn = 0.26 monolayer, a ferromagnetic phase develops with a Curie temperature T_C > 400 K and a saturation moment m_sat = 1.56 μ_B/Mn, whereas T_C drops to zero for a control sample prepared without Pb. For T_Si > 200 C, MnSi-B20 type precipitates form with a T_C ~ 170 K. Rutherford backscattering spectroscopy shows that the increase in the remanent magnetization in these two phases is possibly correlated with an increase in the Mn substitutional fraction, which suggests that a Si_{1-x}Mn_x dilute magnetic semiconductor may be forming in the matrix between the precipitates. Density functional calculations show that Pb changes the pathway by which the Mn atoms access the Si substitutional sites, Mn_Si. While the Pb increases the formation energy of Mn_Si at the Si surface, it enables substitutional incorporation by lowering the formation energy of Si vacancies by 0.92 eV.
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Submitted 28 January, 2013;
originally announced January 2013.
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Local environment of Nitrogen in GaN{y}As{1-y} epilayers on GaAs (001) studied using X-ray absorption near edge spectroscopy
Authors:
J. A. Gupta,
M. W. C. Dharma-wardana,
A. Jürgensen,
E. D. Crozier,
J. J. Rehr,
M. Prange
Abstract:
X-ray absorption near-edge spectroscopy (XANES) is used to study the N environment in bulk GaN and in GaN{y}As{1-y} epilayers on GaAs (001), for y \~5%. Density-functional optimized structures were used to predict XANES via multiple-scattering theory. We obtain striking agreement for pure GaN. An alloy model with nitrogen pairs on Ga accurately predicts the threshold energy, the width of the XAN…
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X-ray absorption near-edge spectroscopy (XANES) is used to study the N environment in bulk GaN and in GaN{y}As{1-y} epilayers on GaAs (001), for y \~5%. Density-functional optimized structures were used to predict XANES via multiple-scattering theory. We obtain striking agreement for pure GaN. An alloy model with nitrogen pairs on Ga accurately predicts the threshold energy, the width of the XANES ``white line'', and features above threshold, for the given X-ray polarization. The presence of N-pairs may point to a role for molecular N_2 in epitaxial growth kinetics.
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Submitted 20 October, 2004;
originally announced October 2004.
