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Semiconductor-based electron flying qubits: Review on recent progress accelerated by numerical modelling
Authors:
Hermann Edlbauer,
Junliang Wang,
Thierry Crozes,
Pierre Perrier,
Seddik Ouacel,
Clément Geffroy,
Giorgos Georgiou,
Eleni Chatzikyriakou,
Antonio Lacerda-Santos,
Xavier Waintal,
D. Christian Glattli,
Preden Roulleau,
Jayshankar Nath,
Masaya Kataoka,
Janine Splettstoesser,
Matteo Acciai,
Maria Cecilia da Silva Figueira,
Kemal Öztas,
Alex Trellakis,
Thomas Grange,
Oleg M. Yevtushenko,
Stefan Birner,
Christopher Bäuerle
Abstract:
The progress of charge manipulation in semiconductor-based nanoscale devices opened up a novel route to realise a flying qubit with a single electron. In the present review, we introduce the concept of these electron flying qubits, discuss their most promising realisations and show how numerical simulations are applicable to accelerate experimental development cycles. Addressing the technological…
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The progress of charge manipulation in semiconductor-based nanoscale devices opened up a novel route to realise a flying qubit with a single electron. In the present review, we introduce the concept of these electron flying qubits, discuss their most promising realisations and show how numerical simulations are applicable to accelerate experimental development cycles. Addressing the technological challenges of flying qubits that are currently faced by academia and quantum enterprises, we underline the relevance of interdisciplinary cooperation to move emerging quantum industry forward. The review consists of two main sections:
Pathways towards the electron flying qubit: We address three routes of single-electron transport in GaAs-based devices focusing on surface acoustic waves, hot-electron emission from quantum dot pumps and Levitons. For each approach, we discuss latest experimental results and point out how numerical simulations facilitate engineering the electron flying qubit.
Numerical modelling of quantum devices: We review the full stack of numerical simulations needed for fabrication of the flying qubits. Choosing appropriate models, examples of basic quantum mechanical simulations are explained in detail. We discuss applications of open-source (KWANT) and the commercial (nextnano) platforms for modelling the flying qubits. The discussion points out the large relevance of software tools to design quantum devices tailored for efficient operation.
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Submitted 4 July, 2022;
originally announced July 2022.
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Performance of CVD diamond detectors for single ion beam-tagging applications in hadrontherapy monitoring
Authors:
Sébastien Curtoni,
Marie-Laure Gallin-Martel,
Sara Marcatili,
Latifa Abbassi,
Alexandre Bes,
Germain Bosson,
Johann Collot,
Thierry Crozes,
Denis Dauvergne,
Wout De Nolf,
Pierre Everaere,
Laurent Gallin-Martel,
Abderrahmane Ghimouz,
Ferid Haddad,
Christophe Hoarau,
Jean-Yves Hostachy,
Charbel Koumeir,
Ana Lacoste,
Vincent Métivier,
John Morse,
Jean-François Motte,
Jean-François Muraz,
Freddy Poirier,
Fatah Ellah Rarbi,
Olivier Rossetto
, et al. (4 additional authors not shown)
Abstract:
In the context of online ion range verification in particle therapy, the CLaRyS collaboration is develo** Prompt-Gamma (PG) detection systems. The originality in the CLaRyS approach is to use a beam-tagging hodoscope in coincidence with the gamma detectors to provide both temporal and spatial information of the incoming ions. The ion range sensitivity of such PG detection systems could be improv…
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In the context of online ion range verification in particle therapy, the CLaRyS collaboration is develo** Prompt-Gamma (PG) detection systems. The originality in the CLaRyS approach is to use a beam-tagging hodoscope in coincidence with the gamma detectors to provide both temporal and spatial information of the incoming ions. The ion range sensitivity of such PG detection systems could be improved by detecting single ions with a 100 ps ($σ$) time resolution, through a quality assurance procedure at low beam intensity at the beginning of the treatment session. This work presents the investigations led to assess the performance of Chemical Vapor Deposition (CVD) diamond detectors to fulfill these requirements. A $^{90}$Sr beta source, 68 MeV protons, 95 MeV/u carbon ions and a synchrotron X-ray pulsed beam were used to measure the time resolution, single ion detection efficiency and proton counting capability of various CVD diamond samples. An offline technique, based on double-sided readout with fast current preamplifiers and used to improve the signal-to-noise ratio, is also presented. The different tests highlighted Time-Of-Flight resolutions ranging from 13 ps ($σ$) to 250 ps ($σ$), depending on the experimental conditions. The single 68 MeV proton detection efficiency of various large area polycrystalline (pCVD) samples was measured to be $>$96% using coincidence measurements with a single-crystal reference detector. Single-crystal CVD (sCVD) diamond proved to be able to count a discrete number of simultaneous protons while it was not achievable with a polycrystalline sample. Considering the results of the present study, two diamond hodoscope demonstrators are under development: one based on sCVD, and one of larger size based on pCVD. They will be used for the purpose of single ion as well as ion bunches detection, either at reduced or clinical beam intensities.
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Submitted 23 August, 2021; v1 submitted 11 May, 2021;
originally announced May 2021.
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Radio-frequency stress-induced modulation of CdTe/ZnTe quantum dots
Authors:
V. Tiwari,
K. Makita,
M. Arino,
M. Morita,
T. Crozes,
E. Bellet-Amalric,
S. Kuroda,
H. Boukari,
L. Besombes
Abstract:
We demonstrate radio-frequency tuning of the energy of individual CdTe/ZnTe quantum dots (QDs) by Surface Acoustic Waves (SAWs). Despite the very weak piezoelectric coefficient of ZnTe, SAW in the GHz range can be launched on a ZnTe surface using interdigitated transducers deposited on a c-axis oriented ZnO layer grown on ZnTe containing CdTe QDs. The photoluminescence (PL) of individual QDs is us…
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We demonstrate radio-frequency tuning of the energy of individual CdTe/ZnTe quantum dots (QDs) by Surface Acoustic Waves (SAWs). Despite the very weak piezoelectric coefficient of ZnTe, SAW in the GHz range can be launched on a ZnTe surface using interdigitated transducers deposited on a c-axis oriented ZnO layer grown on ZnTe containing CdTe QDs. The photoluminescence (PL) of individual QDs is used as a nanometer-scale sensor of the acoustic strain field. The energy of QDs is modulated by SAW in the GHz range and leads to characteristic broadening of time-integrated PL spectra. The dynamic modulation of the QD PL energy can also be detected in the time domain using phase-locked time domain spectroscopy. This technique is in particular used for monitoring complex local acoustic fields resulting from the superposition of two or more SAW pulses in a cavity. Under magnetic field, the dynamic spectral tuning of a single QD by SAW can be used to generate single photons with alternating circular polarization controlled in the GHz range.
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Submitted 27 May, 2020;
originally announced May 2020.
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On-chip thermometry for microwave optomechanics implemented in a nuclear demagnetization cryostat
Authors:
X. Zhou,
D. Cattiaux,
R. R. Gazizulin,
A. Luck,
O. Maillet,
T. Crozes,
J-F. Motte,
O. Bourgeois,
A. Fefferman,
E. Collin
Abstract:
We report on microwave optomechanics measurements performed on a nuclear adiabatic demagnetization cryostat, whose temperature is determined by accurate thermometry from below 500$~μ$K to about 1$~$Kelvin. We describe a method for accessing the on-chip temperature, building on the blue-detuned parametric instability and a standard microwave setup. The capabilities and sensitivity of both the exper…
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We report on microwave optomechanics measurements performed on a nuclear adiabatic demagnetization cryostat, whose temperature is determined by accurate thermometry from below 500$~μ$K to about 1$~$Kelvin. We describe a method for accessing the on-chip temperature, building on the blue-detuned parametric instability and a standard microwave setup. The capabilities and sensitivity of both the experimental arrangement and the developed technique are demonstrated with a very weakly coupled silicon-nitride doubly-clamped beam mode of about 4$~$MHz and a niobium on-chip cavity resonating around 6$~$GHz. We report on an unstable intrinsic driving force in the coupled microwave-mechanical system acting on the mechanics that appears below typically 100$~$mK. The origin of this phenomenon remains unknown, and deserves theoretical input. It prevents us from performing reliable experiments below typically 10-30$~$mK; however no evidence of thermal decoupling is observed, and we propose that the same features should be present in all devices sharing the microwave technology, at different levels of strengths. We further demonstrate empirically how most of the unstable feature can be annihilated, and speculate how the mechanism could be linked to atomic-scale two level systems. The described microwave/microkelvin facility is part of the EMP platform, and shall be used for further experiments within and below the millikelvin range.
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Submitted 20 April, 2022; v1 submitted 12 March, 2019;
originally announced March 2019.
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Network of thermoelectric nanogenerators for low power energy harvesting
Authors:
Dimitri Tainoff,
Anaïs Proudhom,
Céline Tur,
Thierry Crozes,
Sébastien Dufresnes,
Sylvain Dumont,
Daniel Bourgault,
Olivier Bourgeois
Abstract:
We report the design, elaboration and measurements of an innovative planar thermoelectric (TE) devices made of a large array of small mechanically suspended nanogenerators (nanoTEG). The miniaturized TE generators based on SiN membranes are arranged in series and/or in parallel depending on the expected final resistance adapted to the one of the load. The microstructuration allows, at the same tim…
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We report the design, elaboration and measurements of an innovative planar thermoelectric (TE) devices made of a large array of small mechanically suspended nanogenerators (nanoTEG). The miniaturized TE generators based on SiN membranes are arranged in series and/or in parallel depending on the expected final resistance adapted to the one of the load. The microstructuration allows, at the same time, a high thermal insulation of the membrane from the silicon frame and high thermal coupling to its environment (surrounding air, radiations). We show a ratio of 60% between the measured effective temperature of the membrane, (and hence of the TE junctions), and the available temperature of the heat source (air). The thermal gradient generated across the TE junction reaches a value as high as 60 kelvin per mm. Energy harvesting with this planar TE module is demonstrated through the collected voltage on the TE junctions when a temperature gradient is applied, showing a harvested power on the order of 0.3 $μ$Watt for a 1 cm 2 chip for an effective temperature gradient of 10 K. The optimization of nanoTEGs performances will increase the power harvested significantly and permit to send a signal by a regular communication protocol and feed basic functions like temperature measurement or airflow sensing.
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Submitted 21 November, 2018;
originally announced November 2018.
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Slippage and boundary layer probed in an almost-ideal gas by a nano-mechanical oscillator
Authors:
M. Defoort,
K. J. Lulla,
T. Crozes,
O. Maillet,
O. Bourgeois,
E. Collin
Abstract:
We have measured the interaction between $^4$He gas at 4.2$~$K and a high-quality nano-electro-mechanical string device for its first 3 symmetric modes (resonating at 2.2$~$MHz, 6.7$~$MHz and 11$~$MHz with quality factor $Q > 0.1$ million) over almost 6 orders of magnitude in pressure. This fluid can be viewed as the best experimental implementation of an almost-ideal monoatomic and inert gas whic…
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We have measured the interaction between $^4$He gas at 4.2$~$K and a high-quality nano-electro-mechanical string device for its first 3 symmetric modes (resonating at 2.2$~$MHz, 6.7$~$MHz and 11$~$MHz with quality factor $Q > 0.1$ million) over almost 6 orders of magnitude in pressure. This fluid can be viewed as the best experimental implementation of an almost-ideal monoatomic and inert gas which properties are tabulated. The experiment ranges from high pressure where the flow is of laminar Stokes-type presenting slippage, down to very low pressures where the flow is molecular. In the molecular regime, when the mean-free-path is of the order of the distance between the suspended nano-mechanical probe and the bottom of the trench we resolve for the first time the signature of the boundary (Knudsen) layer onto the measured dissipation. Our results are discussed in the framework of the most recent theories investigating boundary effects in fluids (both analytic approaches and Monte-Carlo DSMC simulations).
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Submitted 8 December, 2015;
originally announced December 2015.
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MicroSQUID Force microscopy in a dilution refrigerator
Authors:
Danny Hykel,
Zhao-Sheng Wang,
Pauline Castellazzi,
Thierry Crozes,
Gorky Shaw,
Klaus Hasselbach,
K. F. Schuster
Abstract:
We present a new generation of a scanning MicroSQUID microscope operating in an inverted dilution refrigerator. The MicroSQUIDs have a size of 1.21$ \ μ$m\textsuperscript{2} and a magnetic flux sensitivity of 120 $μΦ_{0} / \sqrt{\textrm{Hz}}$ and thus a field sensitivity of %$550^{-6} \ Φ_{0} / \sqrt{\textrm{Hz}}$ 550$ \ μ\textrm{G}/ \sqrt{\textrm{Hz}}$. The scan range at low temperatures is about…
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We present a new generation of a scanning MicroSQUID microscope operating in an inverted dilution refrigerator. The MicroSQUIDs have a size of 1.21$ \ μ$m\textsuperscript{2} and a magnetic flux sensitivity of 120 $μΦ_{0} / \sqrt{\textrm{Hz}}$ and thus a field sensitivity of %$550^{-6} \ Φ_{0} / \sqrt{\textrm{Hz}}$ 550$ \ μ\textrm{G}/ \sqrt{\textrm{Hz}}$. The scan range at low temperatures is about 80 $μ$m and a coarse displacement of 5 mm in x and y direction has been implemented. The MicroSQUID-to-sample distance is regulated using a tuning fork based force detection. A MicroSQUID-to-sample distance of 420 nm has been obtained. The reliable knowledge of this distance is necessary to obtain a trustworthy estimate of the absolute value of the superconducting penetration depth. An outlook will be given on the ongoing direction of development.
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Submitted 23 March, 2014;
originally announced March 2014.
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Transverse conductivity in the sliding CDW state of NbSe_3
Authors:
A. A. Sinchenko,
P. Monceau,
T. Crozes
Abstract:
The dynamical properties of longitudinal and transverse conduction of NbSe$_3$ single-crystals have been simultaneously studied when the current is applied along the b axis (chain direction). In the vicinity of the threshold electric field for CDW sliding, the transverse conduction sharply decreases. When a rf field is applied, voltage Shapiro steps for longitudinal transport are observed as usual…
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The dynamical properties of longitudinal and transverse conduction of NbSe$_3$ single-crystals have been simultaneously studied when the current is applied along the b axis (chain direction). In the vicinity of the threshold electric field for CDW sliding, the transverse conduction sharply decreases. When a rf field is applied, voltage Shapiro steps for longitudinal transport are observed as usual, but also current Shapiro steps in the transverse direction. The possible mechanisms of this effect are discussed.
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Submitted 24 January, 2012;
originally announced January 2012.
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Fabrication of stable and reproducible sub-micron tunnel junctions
Authors:
I. M. Pop,
T. Fournier,
T. Crozes,
F. Lecocq,
I. Matei,
B. Pannetier,
O. Buisson,
W. Guichard
Abstract:
We have performed a detailed study of the time stability and reproducibility of sub-micron $Al/AlO_{x}/Al$ tunnel junctions, fabricated using standard double angle shadow evaporations. We have found that by aggressively cleaning the substrate before the evaporations, thus preventing any contamination of the junction, we obtained perfectly stable oxide barriers. We also present measurements on larg…
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We have performed a detailed study of the time stability and reproducibility of sub-micron $Al/AlO_{x}/Al$ tunnel junctions, fabricated using standard double angle shadow evaporations. We have found that by aggressively cleaning the substrate before the evaporations, thus preventing any contamination of the junction, we obtained perfectly stable oxide barriers. We also present measurements on large ensembles of junctions which prove the reproducibility of the fabrication process. The measured tunnel resistance variance in large ensembles of identically fabricated junctions is in the range of only a few percents. Finally, we have studied the effect of different thermal treatments on the junction barrier. This is especially important for multiple step fabrication processes which imply annealing the junction.
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Submitted 31 May, 2011;
originally announced May 2011.
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Persistence of superconductivity in niobium ultrathin films grown on R-Plane Sapphire
Authors:
Cécile Delacour,
Luc Ortega,
Marc Faucher,
Thierry Crozes,
Thierry Fournier,
Bernard Pannetier,
Vincent Bouchiat
Abstract:
We report on a combined structural and electronic analysis of niobium ultrathin films (from 2 to 10 nm) deposited in ultra-high vacuum on atomically flat R-plane sapphire wafers. A textured polycrystalline morphology is observed for the thinnest films showing that hetero-epitaxy is not achieved under a thickness of 3.3nm, which almost coincides with the first measurement of a superconducting state…
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We report on a combined structural and electronic analysis of niobium ultrathin films (from 2 to 10 nm) deposited in ultra-high vacuum on atomically flat R-plane sapphire wafers. A textured polycrystalline morphology is observed for the thinnest films showing that hetero-epitaxy is not achieved under a thickness of 3.3nm, which almost coincides with the first measurement of a superconducting state. The superconducting critical temperature rise takes place on a very narrow thickness range, of the order of a single monolayer (ML). The thinnest superconducting sample (3 nm/9ML) has an offset critical temperature above 4.2K and can be processed by standard nanofabrication techniques to generate air- and time-stable superconducting nanostructures, useful for quantum devices.
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Submitted 2 February, 2011;
originally announced February 2011.
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Novel E-beam lithography technique for in-situ junction fabrication: the controlled undercut
Authors:
Florent Lecocq,
Cécile Naud,
Ioan M. Pop,
Zhi-Hui Peng,
Iulian Matei,
Thierry Crozes,
Thierry Fournier,
Wiebke Guichard,
Olivier Buisson
Abstract:
We present a novel shadow evaporation technique for the realization of junctions and capacitors. The design by E-beam lithography of strongly asymmetric undercuts on a bilayer resist enables in-situ fabrication of junctions and capacitors without the use of the well-known suspended bridge[1]. The absence of bridges increases the mechanical robustness of the resist mask as well as the accessible ra…
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We present a novel shadow evaporation technique for the realization of junctions and capacitors. The design by E-beam lithography of strongly asymmetric undercuts on a bilayer resist enables in-situ fabrication of junctions and capacitors without the use of the well-known suspended bridge[1]. The absence of bridges increases the mechanical robustness of the resist mask as well as the accessible range of the junction size, from 0.01 to more than 10000 micron square. We have fabricated Al/AlOx/Al Josephson junctions, phase qubit and capacitors using a 100kV E- beam writer. Although this high voltage enables a precise control of the undercut, implementation using a conventional 20kV E-beam is also discussed. The phase qubit coherence times, extracted from spectroscopy resonance width, Rabi and Ramsey oscillations decay and energy relaxation measurements, are longer than the ones obtained in our previous samples realized by standard techniques. These results demonstrate the high quality of the junction obtained by this controlled undercut technique.
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Submitted 2 February, 2011; v1 submitted 24 January, 2011;
originally announced January 2011.
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Spin-Valve Effect of the Spin Accumulation Resistance in a Double Ferromagnet - Superconductor Junction
Authors:
Pengshun S. Luo,
Thierry Crozes,
Bruno Gilles,
Sukumar Rajauria,
Bernard Pannetier,
Hervé Courtois
Abstract:
We have measured the transport properties of Ferromagnet - Superconductor nanostructures, where two superconducting aluminum (Al) electrodes are connected through two ferromagnetic iron (Fe) ellipsoids in parallel. We find that, below the superconducting critical temperature of Al, the resistance depends on the relative alignment of the ferromagnets' magnetization. This spin-valve effect is anal…
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We have measured the transport properties of Ferromagnet - Superconductor nanostructures, where two superconducting aluminum (Al) electrodes are connected through two ferromagnetic iron (Fe) ellipsoids in parallel. We find that, below the superconducting critical temperature of Al, the resistance depends on the relative alignment of the ferromagnets' magnetization. This spin-valve effect is analyzed in terms of spin accumulation in the superconducting electrode submitted to inverse proximity effect.
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Submitted 3 May, 2009; v1 submitted 26 November, 2008;
originally announced November 2008.
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A thermostable trilayer resist for niobium lift-off
Authors:
P. Dubos,
P. Charlat,
Th. Crozes,
P. Paniez,
B. Pannetier
Abstract:
We have developped a novel lift-off process for fabrication of high quality superconducting submicron niobium structures. The process makes use of a thermostable polymer with a high transition temperature T_{g}= 235 C and an excellent chemical stability. The superconducting critical temperature of 100 nm wide niobium lines is above 7 K. An example of shadow evaporation of a Nb-Cu submicron hybri…
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We have developped a novel lift-off process for fabrication of high quality superconducting submicron niobium structures. The process makes use of a thermostable polymer with a high transition temperature T_{g}= 235 C and an excellent chemical stability. The superconducting critical temperature of 100 nm wide niobium lines is above 7 K. An example of shadow evaporation of a Nb-Cu submicron hybrid structure is given. A potential application of this process is the fabrication of very small single electron devices using refratory metals.
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Submitted 3 September, 1999;
originally announced September 1999.
