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Effect of gamma radiation on electrical properties of diffusive memristor devices
Authors:
D. P. Pattnaik,
C. Andrews,
M. D. Cropper,
A. Balanov,
S. Saveliev,
P. Borisov
Abstract:
Diffusive memristors continue to receive tremendous interest due to their ability to emulate biological neurons and thus aid the development of bio-inspired computation technology. A major issue with the diffusive memristor is the inability to reliably control the formation of the conduction filaments which affects both the device functionality and reproducibility of regimes after each application…
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Diffusive memristors continue to receive tremendous interest due to their ability to emulate biological neurons and thus aid the development of bio-inspired computation technology. A major issue with the diffusive memristor is the inability to reliably control the formation of the conduction filaments which affects both the device functionality and reproducibility of regimes after each application of voltage. Here we investigate the effect of gamma radiation on the electrical properties of the diffusive memristors based on metallic nanoparticles in dielectric matrix. Our experiments show that after exposing to radiation, the memristors demonstrate much sharper (and less noisy) hysteresis in the current-voltage characteristics while preserving the same low- and high-resistive states as in the pristine samples. Additionally, the radiation lowers both threshold and hold voltages that correspond to onset of low- and high- resistive states, respectively. The proposed mechanism involves radiation-induced defects in the silica matrix which help to establish dominant pathways for nanoparticles to form conduction filaments. Our findings suggest an efficient way to enhance working characteristics of diffusive memristors and to improve their reproducibility.
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Submitted 22 March, 2023;
originally announced March 2023.
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Temperature control of diffusive memristor hysteresis and artificial neuron spiking
Authors:
D. P Pattnaik,
Y. Ushakov,
Z. Zhou,
P. Borisov,
M. D Cropper,
U. W. Wijayantha,
A. G. Balanov,
S. E Savel'ev
Abstract:
Memristive devices are promising elements for energy-efficient neuromorphic computing and future artificial intelligence systems. For diffusive memristors, the device state switching occurs because of the sequential formation and disappearance of conduction pillars between device terminals due to the drift and diffusion of Ag nanoparticles in the dielectric matrix. This process is governed by the…
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Memristive devices are promising elements for energy-efficient neuromorphic computing and future artificial intelligence systems. For diffusive memristors, the device state switching occurs because of the sequential formation and disappearance of conduction pillars between device terminals due to the drift and diffusion of Ag nanoparticles in the dielectric matrix. This process is governed by the application of the voltage to the device contacts. Here, both in experiment and in theory we demonstrate that varying temperature offers an efficient control of memristor states and charges transport in the device. We found out that by raising and lowering the device temperature, one can reset the memristor state as well as change the residual time the memristor stays in high and low resistive states when the current spiking is generated in the memristive circuit at a constant applied voltage. Our theoretical model demonstrates a good qualitative agreement with the experiments and helps to explain the effects reported.
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Submitted 11 February, 2022;
originally announced February 2022.
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Spin Seebeck effect and magnon diffusion length in $\rm{\mathbf{Fe}}_{\mathbf{3}}\rm{\mathbf{O}}_{\mathbf{4}}$
Authors:
G. Venkat,
C. D. W. Cox,
D. Voneshen,
A. J. Caruana,
A. Piovano,
M. D. Cropper,
K. Morrison
Abstract:
The determination of the magnon diffusion length (MDL) is important for increasing the efficiency of spin Seebeck effect (SSE) based devices utilising non-metallic magnets. We extract the MDL at $50$ and $300\,\rm{K}$ in an $\rm{Fe}_{3}\rm{O}_{4}$ single crystal from the magnon dispersion obtained using inelastic neutron scattering (INS) and find them to be equal within error. We then measure the…
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The determination of the magnon diffusion length (MDL) is important for increasing the efficiency of spin Seebeck effect (SSE) based devices utilising non-metallic magnets. We extract the MDL at $50$ and $300\,\rm{K}$ in an $\rm{Fe}_{3}\rm{O}_{4}$ single crystal from the magnon dispersion obtained using inelastic neutron scattering (INS) and find them to be equal within error. We then measure the heat flux normalised SSE responses and in-plane magnetization of $\rm{Fe}_{3}\rm{O}_{4}$ thin films and normalise by the static magnetization contribution to the SSE before determining the MDLs from a fit of the thickness dependence. We find that the MDLs determined in this way are smaller than that measured from INS which maybe due to differences in magnon propagation between bulk and thin film $\rm{Fe}_{3}\rm{O}_{4}$.
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Submitted 11 January, 2020;
originally announced January 2020.
