-
First test beam measurement of the 4D resolution of an RSD 450 microns pitch pixel matrix connected to a FAST2 ASIC
Authors:
L. Menzio,
F. Siviero,
R. Arcidiacono,
N. Cartiglia,
M. Costa,
T. Croci,
M. Ferrero,
C. Hanna,
L. Lanteri,
S. Mazza,
R. Mulargiaa,
H-F W. Sadrozinski,
A. Seiden,
V. Sola,
R. Whitea,
M. Wilder
Abstract:
This paper reports on the spatial and temporal resolutions of an RSD 450 microns pitch pixels array measured at the DESY test beam facility. RSDs, Resistive Silicon Detectors, also known as AC-LGAD, achieve excellent position and temporal resolution by exploiting charge sharing among neighboring electrodes. The RSD matrix used in this study is part of the second FBK RSD production, RSD2, and it is…
▽ More
This paper reports on the spatial and temporal resolutions of an RSD 450 microns pitch pixels array measured at the DESY test beam facility. RSDs, Resistive Silicon Detectors, also known as AC-LGAD, achieve excellent position and temporal resolution by exploiting charge sharing among neighboring electrodes. The RSD matrix used in this study is part of the second FBK RSD production, RSD2, and it is composed of 450 microns pitch pixel with cross-shaped electrodes. A 7-pixel matrix was read out by the FAST2 ASIC, a 16-channel amplifier fully custom ASIC developed by INFN Torino using the 110 nm CMOS technology. The total area covered by the matrix is about 1.5 mm$^2$. The position resolution reached in this test is 15 microns, about 4\% of the pitch. The temporal resolution achieved in this work is 60 ps, dominated by the FAST2 resolution. The work also demonstrates that RSD sensors with cross-shaped electrodes achieve 100% fill factor and homogenous resolutions over the whole matrix surface, making them a suitable choice for 4D tracking applications.
△ Less
Submitted 17 February, 2024; v1 submitted 2 February, 2024;
originally announced February 2024.
-
Characterization of hydrogenated amorphous silicon sensors on polyimide flexible substrate
Authors:
M. Menichelli,
L. Antognini,
S. Aziz,
A. Bashiri,
M. Bizzarri,
L. Calcagnile,
M. Caprai,
D. Caputo,
A. P. Caricato,
R. Catalano,
D. Chilà,
G. A. P. Cirrone,
T. Croci,
G. Cuttone,
G. De Cesare,
S. Dunand,
M. Fabi,
L. Frontini,
C. Grimani,
M. Ionica,
K. Kanxheri,
M. Large,
V. Liberali,
N. Lovecchio,
M. Martino
, et al. (28 additional authors not shown)
Abstract:
Hydrogenated amorphous silicon (a-Si:H) is a material having an intrinsically high radiation hardness that can be deposited on flexible substrates like Polyimide. For these properties a-Si:H can be used for the production of flexible sensors. a-Si:H sensors can be successfully utilized in dosimetry, beam monitoring for particle physics (x-ray, electron, gamma-ray and proton detection) and radiothe…
▽ More
Hydrogenated amorphous silicon (a-Si:H) is a material having an intrinsically high radiation hardness that can be deposited on flexible substrates like Polyimide. For these properties a-Si:H can be used for the production of flexible sensors. a-Si:H sensors can be successfully utilized in dosimetry, beam monitoring for particle physics (x-ray, electron, gamma-ray and proton detection) and radiotherapy, radiation flux measurement for space applications (study of solar energetic particles and stellar events) and neutron flux measurements. In this paper we have studied the dosimetric x-ray response of n-i-p diodes deposited on Polyimide. We measured the linearity of the photocurrent response to x-rays versus dose-rate from which we have extracted the dosimetric x-ray sensitivity at various bias voltages. In particular low bias voltage operation has been studied to assess the high energy efficiency of these kind of sensor. A measurement of stability of x-ray response versus time has been shown. The effect of detectors annealing has been studied. Operation under bending at various bending radii is also shown.
△ Less
Submitted 30 September, 2023;
originally announced October 2023.
-
A Hydrogenated amorphous silicon detector for Space Weather Applications
Authors:
Catia Grimani,
Michele Fabi,
Federico Sabbatini,
Mattia Villani,
Lucio Calcagnile,
Anna Paola Caricato,
Roberto Catalano,
Giuseppe Antonio Pablo Cirrone,
Tommaso Croci,
Giacomo Cuttone,
Sylvain Dunand,
Luca Frontini,
Maria Ionica,
Keida Kanxheri,
Matthew Large,
Valentino Liberali,
Maurizio Martino,
Giuseppe Maruccio,
Giovanni Mazza,
Mauro Menichelli,
Anna Grazia Monteduro,
Arianna Morozzi,
Francesco Moscatelli,
Stefania Pallotta,
Daniele Passeri
, et al. (13 additional authors not shown)
Abstract:
The characteristics of a hydrogenated amorphous silicon (a-Si:H) detector are presented here for monitoring in space solar flares and the evolution of large energetic proton events up to hundreds of MeV. The a-Si:H presents an excellent radiation hardness and finds application in harsh radiation environments for medical purposes, for particle beam characterization and in space weather science and…
▽ More
The characteristics of a hydrogenated amorphous silicon (a-Si:H) detector are presented here for monitoring in space solar flares and the evolution of large energetic proton events up to hundreds of MeV. The a-Si:H presents an excellent radiation hardness and finds application in harsh radiation environments for medical purposes, for particle beam characterization and in space weather science and applications. The critical flux detection threshold for solar X rays, soft gamma rays, electrons and protons is discussed in detail.
△ Less
Submitted 1 September, 2023; v1 submitted 1 February, 2023;
originally announced February 2023.
-
Resistive Read-out in Thin Silicon Sensors with Internal Gain
Authors:
N. Cartiglia,
F. Moscatelli,
R. Arcidiacono,
P. Asenov,
M. Costa,
T. Croci,
M. Ferrero,
A. Fondacci,
L. Lanteri,
L. Menzio,
A. Morozzi,
R. Mulargia,
D. Passeri,
F. Siviero,
V. Sola,
M. Tornago
Abstract:
Two design innovations, low-gain avalanche (Low-Gain Avalance Diode, LGAD) and resistive read-out (Resistive Silicon Detector, RSD), have brought strong performance improvements to silicon sensors. Large signals, due to the added gain mechanism, lead to improved temporal precision, while charge sharing, introduced by resistive read-out, allows for achieving excellent spatial resolution even with l…
▽ More
Two design innovations, low-gain avalanche (Low-Gain Avalance Diode, LGAD) and resistive read-out (Resistive Silicon Detector, RSD), have brought strong performance improvements to silicon sensors. Large signals, due to the added gain mechanism, lead to improved temporal precision, while charge sharing, introduced by resistive read-out, allows for achieving excellent spatial resolution even with large pixels. LGAD- and RSD- based silicon sensors are now adopted, or considered, in several future experiments and are the basis for almost every next 4D-trackers. New results obtained with sensors belonging to the second FBK production of RSD (RSD2) demonstrate how a combined resolution of 30 ps and 30 \microns can be obtained with pixels as large as $1 \times 1 $ mm$^2$.
△ Less
Submitted 7 January, 2023;
originally announced January 2023.
-
Development of thin hydrogenated amorphous silicon detectors on a flexible substrate
Authors:
M. Menichelli,
M. Bizzarri,
L. Calcagnile,
M. Caprai,
A. P. Caricato,
R. Catalano,
G. A. P. Cirrone,
T. Croci,
G. Cuttone,
S. Dunand,
M. Fabi,
L. Frontini,
B. Gianfelici,
C. Grimani,
M. Ionica,
K. Kanxheri,
M. Large,
V. Liberali,
M. Martino,
G. Maruccio,
G. Mazza,
A. G. Monteduro,
A. Morozzi,
F. Moscatelli,
S. Pallotta
, et al. (18 additional authors not shown)
Abstract:
The HASPIDE (Hydrogenated Amorphous Silicon PIxels DEtectors) project aims at the development of thin hydrogenated amorphous silicon (a-Si:H) detectors on flexible substrates (mostly Polyimide) for beam monitoring, neutron detection and space applications. Since a-Si:H is a material with superior radiation hardness, the benefit for the above-mentioned applications can be appreciated mostly in radi…
▽ More
The HASPIDE (Hydrogenated Amorphous Silicon PIxels DEtectors) project aims at the development of thin hydrogenated amorphous silicon (a-Si:H) detectors on flexible substrates (mostly Polyimide) for beam monitoring, neutron detection and space applications. Since a-Si:H is a material with superior radiation hardness, the benefit for the above-mentioned applications can be appreciated mostly in radiation harsh environments. Furthermore, the possibility to deposit this material on flexible substrates like Polyimide (PI), polyethylene naphthalate (PEN) or polyethylene terephthalate (PET) facilitates the usage of these detectors in medical dosimetry, beam flux and beam profile measurements. Particularly interesting is its use when positioned directly on the flange of the vacuum-to-air separation interface in a beam line, as well as other applications where a thin self-standing radiation flux detector is envisaged. In this paper, the HASPIDE project will be described and some preliminary results on PI and glass substrates will be reported.
△ Less
Submitted 30 November, 2022;
originally announced November 2022.
-
A Compensated Design of the LGAD Gain Layer
Authors:
Valentina Sola,
Roberta Arcidiacono,
Patrick Asenov,
Giacomo Borghi,
Maurizio Boscardin,
Nicolò Cartiglia,
Matteo Centis Vignali,
Tommaso Croci,
Marco Ferrero,
Alessandro Fondacci,
Giulia Gioachin,
Simona Giordanengo,
Leonardo Lantieri,
Marco Mandurrino,
Luca Menzio,
Vincenzo Monaco,
Arianna Morozzi,
Francesco Moscatelli,
Daniele Passeri,
Nadia Pastrone,
Giovanni Paternoster,
Federico Siviero,
Amedeo Staiano,
Marta Tornago
Abstract:
In this contribution, we present an innovative design of the Low-Gain Avalanche Diode (LGAD) gain layer, the p$^+$ implant responsible for the local and controlled signal multiplication. In the standard LGAD design, the gain layer is obtained by implanting $\sim$ 5E16/cm$^3$ atoms of an acceptor material, typically Boron or Gallium, in the region below the n$^{++}$ electrode. In our design, we aim…
▽ More
In this contribution, we present an innovative design of the Low-Gain Avalanche Diode (LGAD) gain layer, the p$^+$ implant responsible for the local and controlled signal multiplication. In the standard LGAD design, the gain layer is obtained by implanting $\sim$ 5E16/cm$^3$ atoms of an acceptor material, typically Boron or Gallium, in the region below the n$^{++}$ electrode. In our design, we aim at designing a gain layer resulting from the overlap of a p$^+$ and an n$^+$ implants: the difference between acceptor and donor do** will result in an effective concentration of about 5E16/cm$^3$, similar to standard LGADs. At present, the gain mechanism of LGAD sensors under irradiation is maintained up to a fluence of $\sim$ 1-2E15/cm$^2$, and then it is lost due to the acceptor removal mechanism. The new design will be more resilient to radiation, as both acceptor and donor atoms will undergo removal with irradiation, but their difference will maintain constant. The compensated design will empower the 4D tracking ability typical of the LGAD sensors well above 1E16/cm$^2$.
△ Less
Submitted 1 September, 2022;
originally announced September 2022.
