Efficient fabrication of high-density ensembles of color centers via ion implantation on a hot diamond substrate
Authors:
E. Nieto Hernandez,
G. Andrini,
A. Crnjac,
M. Brajkovic,
F. Picariello,
E. Corte,
V. Pugliese,
M. Matijević,
P. Aprà,
V. Varzi,
J. Forneris,
M. Genovese,
Z. Siketic,
M. Jaksic,
S. Ditalia Tchernij
Abstract:
Nitrogen-Vacancy (NV) centers in diamond are promising systems for quantum technologies, including quantum metrology and sensing. A promising strategy for the achievement of high sensitivity to external fields relies on the exploitation of large ensembles of NV centers, whose fabrication by ion implantation is upper limited by the amount of radiation damage introduced in the diamond lattice. In th…
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Nitrogen-Vacancy (NV) centers in diamond are promising systems for quantum technologies, including quantum metrology and sensing. A promising strategy for the achievement of high sensitivity to external fields relies on the exploitation of large ensembles of NV centers, whose fabrication by ion implantation is upper limited by the amount of radiation damage introduced in the diamond lattice. In this works we demonstrate an approach to increase the density of NV centers upon the high-fluence implantation of MeV N2+ ions on a hot target substrate (>550 °C). Our results show that, with respect to room-temperature implantation, the high-temperature process increases the vacancy density threshold required for the irreversible conversion of diamond to a graphitic phase, thus enabling to achieve higher density ensembles. Furthermore, the formation efficiency of color centers was investigated on diamond substrates implanted at varying temperatures with MeV N2+ and Mg+ ions revealing that the formation efficiency of both NV centers and magnesium-vacancy (MgV) centers increases with the implantation temperature.
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Submitted 30 October, 2023;
originally announced October 2023.
Fluorine-based color centers in diamond
Authors:
S. Ditalia Tchernij,
T. Lühmann,
E. Corte,
F. Sardi,
F. Picollo,
P. Traina,
M. Brajkovic,
A. Crnjac,
S. Pezzagna,
I. P. Degiovanni,
E. Moreva,
P. Aprà,
P. Olivero,
Z. Siketić,
J. Meijer,
M. Genovese,
J. Forneris
Abstract:
We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission line at 558 nm and of intense bands in the 600 - 750 nm spectral range. Characterization at liquid He temperature reveals the presence of a structured s…
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We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission line at 558 nm and of intense bands in the 600 - 750 nm spectral range. Characterization at liquid He temperature reveals the presence of a structured set of lines in the 600 - 670 nm spectral range. We discuss the dependence of the emission properties of F-related optical centers on different experimental parameters such as the operating temperature and the excitation wavelength. The correlation of the emission intensity with F implantation fluence, and the exclusive observation of the afore-mentioned spectral features in F-implanted and annealed samples provides a strong indication that the observed emission features are related to a stable F-containing defective complex in the diamond lattice.
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Submitted 9 December, 2020; v1 submitted 28 September, 2020;
originally announced September 2020.
