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Impact of a $MoS_2$ monolayer on the nanoscale thermoelastic response of silicon heterostructures
Authors:
Davide Soranzio,
Denny Puntel,
Manuel Tuniz,
Paulina E. Majchrzak,
Alessandra Milloch,
Nicholas M. Olsen,
Wibke Bronsch,
Bjarke S. Jessen,
Danny Fainozzi,
Jacopo S. Pelli Cresi,
Dario De Angelis,
Laura Foglia,
Riccardo Mincigrucci,
Xiaoyang Zhu,
Cory R. Dean,
Søren Ulstrup,
Francesco Banfi,
Claudio Giannetti,
Fulvio Parmigiani,
Filippo Bencivenga,
Federico Cilento
Abstract:
Understanding the thermoelastic response of a nanostructure is crucial for the choice of materials and interfaces in electronic devices with improved and tailored transport properties, at the length scales of the present technology. Here we show how the deposition of a $MoS_2$ monolayer can strongly modify the nanoscale thermoelastic dynamics of silicon substrates close to their interface. We achi…
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Understanding the thermoelastic response of a nanostructure is crucial for the choice of materials and interfaces in electronic devices with improved and tailored transport properties, at the length scales of the present technology. Here we show how the deposition of a $MoS_2$ monolayer can strongly modify the nanoscale thermoelastic dynamics of silicon substrates close to their interface. We achieve this result by creating a transient grating with extreme ultraviolet light, using ultrashort free-electron laser pulses, whose $\approx$84 nm period is comparable to the size of elements typically used in nanodevices, such as electric contacts and nanowires. The thermoelastic response, featured by coherent acoustic waves and an incoherent relaxation, is tangibly modified by the presence of monolayer $MoS_2$. Namely, we observed a major reduction of the amplitude of the surface mode, which is almost suppressed, while the longitudinal mode is basically unperturbed, aside from a faster decay of the acoustic modulations. We interpret this behavior as a selective modification of the surface elasticity and we discuss the conditions to observe such effect, which might be of immediate relevance for the design of Si-based nanoscale devices.
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Submitted 29 March, 2024; v1 submitted 28 March, 2024;
originally announced March 2024.
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FEL stochastic spectroscopy revealing silicon bond softening dynamics
Authors:
Dario De Angelis,
Emiliano Principi,
Filippo Bencivenga,
Daniele Fausti,
Laura Foglia,
Yishay Klein,
Michele Manfredda,
Riccardo Mincigrucci,
Angela Montanaro,
Emanuele Pedersoli,
Jacopo Stefano Pelli Cresi,
Giovanni Perosa,
Kevin C. Prince,
Elia Razzoli,
Sharon Shwartz,
Alberto Simoncig,
Simone Spampinati,
Cristian Svetina,
Jakub Szlachetko,
Alok Tripathi,
Ivan A. Vartanyants,
Marco Zangrando,
Flavio Capotondi
Abstract:
Time-resolved X-ray Emission/Absorption Spectroscopy (Tr-XES/XAS) is an informative experimental tool sensitive to electronic dynamics in materials, widely exploited in diverse research fields. Typically, Tr-XES/XAS requires X-ray pulses with both a narrow bandwidth and sub-picosecond pulse duration, a combination that in principle finds its optimum with Fourier transform-limited pulses. In this w…
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Time-resolved X-ray Emission/Absorption Spectroscopy (Tr-XES/XAS) is an informative experimental tool sensitive to electronic dynamics in materials, widely exploited in diverse research fields. Typically, Tr-XES/XAS requires X-ray pulses with both a narrow bandwidth and sub-picosecond pulse duration, a combination that in principle finds its optimum with Fourier transform-limited pulses. In this work, we explore an alternative xperimental approach, capable of simultaneously retrieving information about unoccupied (XAS) and occupied (XES) states from the stochastic fluctuations of broadband extreme ultraviolet pulses of a free-electron laser. We used this method, in combination with singular value decomposition and Tikhonov regularization procedures, to determine the XAS/XES response from a crystalline silicon sample at the L2,3-edge, with an energy resolution of a few tens of meV. Finally, we combined this spectroscopic method with a pump-probe approach to measure structural and electronic dynamics of a silicon membrane. Tr-XAS/XES data obtained after photoexcitation with an optical laser pulse at 390 nm allowed us to observe perturbations of the band structure, which are compatible with the formation of the predicted precursor state of a non-thermal solid-liquid phase transition associated with a bond softening phenomenon.
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Submitted 9 May, 2023;
originally announced May 2023.
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Ultrafast dynamics in (TaSe$_4$)$_2$I triggered by valence and core-level excitation
Authors:
Wibke Bronsch,
Manuel Tuniz,
Giuseppe Crupi,
Michela De Col,
Denny Puntel,
Davide Soranzio,
Alessandro Giammarino,
Michele Perlangeli,
Helmuth Berger,
Dario De Angelis,
Danny Fainozzi,
Ettore Paltanin,
Stefano Pelli Cresi,
Gabor Kurdi,
Laura Foglia,
Riccardo Mincigrucci,
Fulvio Parmigiani,
Filippo Bencivenga,
Federico Cilento
Abstract:
In this work, we study the out-of-equilibrium dynamics of the paradigmatic quasi-one-dimensional material (TaSe$_4$)$_2$I, that exhibits a transition into an incommensurate CDW phase when cooled just below room temperature, namely at T$_{\rm{CDW}} $= 263 K. We make use of both optical laser and free-electron laser (FEL) based time-resolved spectroscopies in order to study the effect of a selective…
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In this work, we study the out-of-equilibrium dynamics of the paradigmatic quasi-one-dimensional material (TaSe$_4$)$_2$I, that exhibits a transition into an incommensurate CDW phase when cooled just below room temperature, namely at T$_{\rm{CDW}} $= 263 K. We make use of both optical laser and free-electron laser (FEL) based time-resolved spectroscopies in order to study the effect of a selective excitation on the normal-state and on the CDW phases, by probing the near-infrared/visible optical properties both along and perpendicularly to the direction of the CDW, where the system is metallic and insulating, respectively. Excitation of the core-levels by ultrashort X-ray FEL pulses at 47 eV and 119 eV induces reflectivity transients resembling those recorded when only exciting the valence band of the compound - by near-infrared pulses at 1.55 eV - in the case of the insulating sub-system. Conversely, the metallic sub-system displays a relaxation dynamics which depends on the energy of photo-excitation. Moreover, excitation of the CDW amplitude mode is recorded only for excitation at low-photon-energy. This fact suggests that the coupling of light to ordered states of matter can predominantly be achieved when directly injecting delocalized carriers in the valence band, rather than localized excitations in the core levels. On a complementary side, table-top experiments allow us to prove the quasi-unidirectional nature of the CDW phase in (TaSe$_4$)$_2$I, whose fingerprints are detected along its $c$-axis only. Our results provide new insights on the symmetry of the ordered phase of (TaSe$_4$)$_2$I perturbed by a selective excitation, and suggest a novel approach based on complementary table-top and FEL spectroscopies for the study of complex materials.
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Submitted 7 February, 2022;
originally announced February 2022.
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Stoichiometric Bi2Se3 Topological Insulator Ultra-Thin Films Obtained Through a New Fabrication Process for Optoelectronic Applications
Authors:
Matteo Salvato,
Mattia Scagliotti,
Maurizio De Crescenzi,
Paola Castrucci,
Fabio De Matteis,
Michele Crivellari,
Stefano Pelli Cresi,
Daniele Catone,
Thilo Bauch,
Floriana Lombardi
Abstract:
A new fabrication process is developed for growing Bi2Se3 topological insulators in the form of nanowires/nanobelts and ultra-thin films. It consists of two consecutive procedures: first Bi2Se3 nanowires/nanobelts are deposited by standard catalyst free vapour-solid deposition on different substrates positioned inside a quartz tube. Then, the Bi2Se3, stuck on the inner surface of the quartz tube,…
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A new fabrication process is developed for growing Bi2Se3 topological insulators in the form of nanowires/nanobelts and ultra-thin films. It consists of two consecutive procedures: first Bi2Se3 nanowires/nanobelts are deposited by standard catalyst free vapour-solid deposition on different substrates positioned inside a quartz tube. Then, the Bi2Se3, stuck on the inner surface of the quartz tube, is re-evaporated and deposited in the form of ultra-thin films on new substrates at temperature below 100 °C, which is of relevance for flexible electronic applications. The method is new, quick, very inexpensive, easy to control and allows obtaining films with different thickness down to one quintuple layer (QL) during the same procedure. The composition and the crystal structure of both the nanowires/nanobelts and the thin films is analysed by different optical, electronic and structural techniques. For the films, scanning tunnelling spectroscopy shows that the Fermi level is positioned in the middle of the energy bandgap as a consequence of the achieved correct stoichiometry. Ultra-thin films, with thickness in the range 1-10 QLs deposited on n-doped Si substrates, show good rectified properties suitable for their use as photodetectors in the ultra violet-visible-near infrared wavelength range
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Submitted 13 December, 2020;
originally announced December 2020.
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Ultrafast optical spectroscopy of semiconducting and plasmonic nanostructures and their hybrids
Authors:
Daniele Catone,
Lorenzo Di Mario,
Faustino Martelli,
Patrick O'Keeffe,
Alessandra Paladini,
Jacopo Stefano Pelli Cresi,
Aswathi K. Sivan,
Lin Tian,
Francesco Toschi,
Stefano Turchini
Abstract:
The knowledge of the carrier dynamics in nanostructures is of fundamental importance for the development of (opto)electronic devices. This is true for semiconducting nanostructures as well as for plasmonic nanoparticles (NPs). Indeed, improvement of photocatalytic efficiencies by combining semiconductor and plasmonic nanostructures is one of the reasons why their ultrafast dynamics are intensively…
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The knowledge of the carrier dynamics in nanostructures is of fundamental importance for the development of (opto)electronic devices. This is true for semiconducting nanostructures as well as for plasmonic nanoparticles (NPs). Indeed, improvement of photocatalytic efficiencies by combining semiconductor and plasmonic nanostructures is one of the reasons why their ultrafast dynamics are intensively studied. In this work, we will review our activity on ultrafast spectroscopy in nanostructures carried out in the recently established EuroFEL Support Laboratory. We have investigated the dynamical plasmonic responses of metal NPs both in solution and in 2D and 3D arrays on surfaces, with particular attention being paid to the effects of the nanoparticle shape and to the conversion of absorbed light into heat on a nano-localized scale. We will summarize the results obtained on the carrier dynamics in nanostructured perovskites with emphasis on the hot-carrier dynamics and in semiconductor nanosystems such as ZnSe and Si nanowires, with particular attention to the band-gap bleaching dynamics. Subsequently, the study of semiconductor-metal NP hybrids, such as CeO$_2$-Ag NPs, ZnSe-Ag NPs and ZnSe-Au NPs, allows the discussion of interaction mechanisms such as charge carrier transfer and F{ö}rster interaction. Finally, we assess an alternative method for the sensitization of wide band gap semiconductors to visible light by discussing the relationship between the carrier dynamics of TiO$_2$ NPs and V-doped TiO$_2$ NPs and their catalytic properties.
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Submitted 18 September, 2020; v1 submitted 10 August, 2020;
originally announced August 2020.
