Identifying regions of importance in wall-bounded turbulence through explainable deep learning
Authors:
Andres Cremades,
Sergio Hoyas,
Rahul Deshpande,
Pedro Quintero,
Martin Lellep,
Will Junghoon Lee,
Jason Monty,
Nicholas Hutchins,
Moritz Linkmann,
Ivan Marusic,
Ricardo Vinuesa
Abstract:
Despite its great scientific and technological importance, wall-bounded turbulence is an unresolved problem in classical physics that requires new perspectives to be tackled. One of the key strategies has been to study interactions among the energy-containing coherent structures in the flow. Such interactions are explored in this study for the first time using an explainable deep-learning method.…
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Despite its great scientific and technological importance, wall-bounded turbulence is an unresolved problem in classical physics that requires new perspectives to be tackled. One of the key strategies has been to study interactions among the energy-containing coherent structures in the flow. Such interactions are explored in this study for the first time using an explainable deep-learning method. The instantaneous velocity field obtained from a turbulent channel flow simulation is used to predict the velocity field in time through a U-net architecture. Based on the predicted flow, we assess the importance of each structure for this prediction using the game-theoretic algorithm of SHapley Additive exPlanations (SHAP). This work provides results in agreement with previous observations in the literature and extends them by revealing that the most important structures in the flow are not necessarily the ones with the highest contribution to the Reynolds shear stress. We also apply the method to an experimental database, where we can identify completely new structures based on their importance score. This framework has the potential to shed light on numerous fundamental phenomena of wall-bounded turbulence, including novel strategies for flow control.
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Submitted 19 February, 2024; v1 submitted 2 February, 2023;
originally announced February 2023.
Strain modulation of Si vacancy emission from SiC micro- and nanoparticles
Authors:
G. C. Vásquez,
M. E. Bathen,
A. Galeckas,
C. Bazioti,
K. M. Johansen,
D. Maestre,
A. Cremades,
Ø. Prytz,
A. M. Moe,
A. Yu. Kuznetsov,
L. Vines
Abstract:
Single-photon emitting point defects in semiconductors have emerged as strong candidates for future quantum technology devices. In the present work, we exploit crystalline particles to investigate relevant defect localizations, emission shifting and waveguiding. Specifically, emission from 6H-SiC micro- and nanoparticles ranging from 100 nm to 5 $μ$m in size is collected using cathodoluminescence…
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Single-photon emitting point defects in semiconductors have emerged as strong candidates for future quantum technology devices. In the present work, we exploit crystalline particles to investigate relevant defect localizations, emission shifting and waveguiding. Specifically, emission from 6H-SiC micro- and nanoparticles ranging from 100 nm to 5 $μ$m in size is collected using cathodoluminescence (CL), and we monitor signals attributed to the Si vacancy (V$_{\textrm{Si}}$) as a function of its location. Clear shifts in the emission wavelength are found for emitters localized in the particle center and at the edges. By comparing spatial CL maps with strain analysis carried out in transmission electron microscopy, we attribute the emission shifts to compressive strain of 2-3% along the particle a-direction. Thus, embedding V$_{\textrm{Si}}$ qubit defects within SiC nanoparticles offers an interesting and versatile opportunity to tune single-photon emission energies, while simultaneously ensuring ease of addressability via a self-assembled SiC nanoparticle matrix.
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Submitted 5 November, 2020;
originally announced November 2020.