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Enhanced Eshelby Twist on Thin Wurtzite InP Nanowires and Measurement of Local Crystal Rotation
Authors:
L. H. G. Tizei,
A. J. Craven,
L. F. Zagonel,
M. Tencé,
O. Stéphan,
T. Chiaramonte,
M. A. Cotta,
D. Ugarte
Abstract:
We have performed a detailed study of the lattice distortions of InP wurtzite nanowires containing an axial screw dislocation. Eshelby predicted that this kind of system should show a crystal rotation due to the dislocation induced torque. We have measured the twisting rate and the dislocation Burgers vector on individual wires, revealing that nanowires with a 10-nm radius have a twist up to 100%…
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We have performed a detailed study of the lattice distortions of InP wurtzite nanowires containing an axial screw dislocation. Eshelby predicted that this kind of system should show a crystal rotation due to the dislocation induced torque. We have measured the twisting rate and the dislocation Burgers vector on individual wires, revealing that nanowires with a 10-nm radius have a twist up to 100% larger than estimated from elasticity theory. The strain induced by the deformation has a Mexican-hat-like geometry, which may create a tube-like potential well for carriers.
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Submitted 11 September, 2014;
originally announced September 2014.
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Characterization of Fe-N nano crystals and nitrogen-containing inclusions in (Ga,Fe)N thin films using transmission electron microscopy
Authors:
A. Kovacs,
B. Schaffer,
M. S. Moreno,
J. R. **schek,
A. J. Craven,
T. Dietl,
A. Bonanni,
R. E. Dunin-Borkowski
Abstract:
Nanometric inclusions filled with nitrogen, located adjacent to FenN (n = 3 or 4) nanocrystals within (Ga,Fe)N layers, are identified and characterized using scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS). High-resolution STEM images reveal a truncation of the Fe-N nanocrystals at their boundaries with the nitrogen-containing inclusion. A controlled e…
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Nanometric inclusions filled with nitrogen, located adjacent to FenN (n = 3 or 4) nanocrystals within (Ga,Fe)N layers, are identified and characterized using scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS). High-resolution STEM images reveal a truncation of the Fe-N nanocrystals at their boundaries with the nitrogen-containing inclusion. A controlled electron beam hole drilling experiment is used to release nitrogen gas from an inclusion in situ in the electron microscope. The density of nitrogen in an individual inclusion is measured to be 1.4 +- 0.3 g/cm3. These observations provide an explanation for the location of surplus nitrogen in the (Ga,Fe)N layers, which is liberated by the nucleation of FenN (n> 1) nanocrystals during growth.
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Submitted 30 July, 2013;
originally announced July 2013.
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On the effect of short-range magnetic ordering on electron energy-loss spectra in spinels
Authors:
D. W. McComb,
A. J. Craven,
L. Chioncel,
A. I. Lichtenstein,
F. T. Docherty
Abstract:
The energy-loss near-edge structure (ELNES) at the oxygen $K$ edge in two $AB_2O_4$ spinels (A=Mg, B=Al,Cr) is reported. In $MgAl_2O_4$ the experimental data is successfully modelled within the LDA framework. In the case of $MgCr_2O_4$ spin-polarisation, in the form of antiferromagnetic ordering on the Cr sub-lattice, must be included despite the fact that the measurements were performed at appr…
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The energy-loss near-edge structure (ELNES) at the oxygen $K$ edge in two $AB_2O_4$ spinels (A=Mg, B=Al,Cr) is reported. In $MgAl_2O_4$ the experimental data is successfully modelled within the LDA framework. In the case of $MgCr_2O_4$ spin-polarisation, in the form of antiferromagnetic ordering on the Cr sub-lattice, must be included despite the fact that the measurements were performed at approximately 30 times above $T_N$. A model in which dynamic short-range antiferromagnetic ordering is present at room temperature is proposed to explain the results of the experiments and calculations.
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Submitted 14 January, 2004;
originally announced January 2004.
