-
Grain Boundary Loops in Graphene
Authors:
Eric Cockayne,
Gregory M. Rutter,
Nathan P. Guisinger,
Jason N. Crain,
Phillip N. First,
Joseph A. Stroscio
Abstract:
Topological defects can affect the physical properties of graphene in unexpected ways. Harnessing their influence may lead to enhanced control of both material strength and electrical properties. Here we present a new class of topological defects in graphene composed of a rotating sequence of dislocations that close on themselves, forming grain boundary loops that either conserve the number of ato…
▽ More
Topological defects can affect the physical properties of graphene in unexpected ways. Harnessing their influence may lead to enhanced control of both material strength and electrical properties. Here we present a new class of topological defects in graphene composed of a rotating sequence of dislocations that close on themselves, forming grain boundary loops that either conserve the number of atoms in the hexagonal lattice or accommodate vacancy/interstitial reconstruction, while leaving no unsatisfied bonds. One grain boundary loop is observed as a "flower" pattern in scanning tunneling microscopy (STM) studies of epitaxial graphene grown on SiC(0001). We show that the flower defect has the lowest energy per dislocation core of any known topological defect in graphene, providing a natural explanation for its growth via the coalescence of mobile dislocations.
△ Less
Submitted 4 March, 2011; v1 submitted 20 August, 2010;
originally announced August 2010.
-
Imaging the interface of epitaxial graphene with silicon carbide via scanning tunneling microscopy
Authors:
G. M. Rutter,
N. P. Guisinger,
J. N. Crain,
E. A. A. Jarvis,
M. D. Stiles,
T. Li,
P. N. First,
J. A. Stroscio
Abstract:
Graphene grown epitaxially on SiC has been proposed as a material for carbon-based electronics. Understanding the interface between graphene and the SiC substrate will be important for future applications. We report the ability to image the interface structure beneath single-layer graphene using scanning tunneling microscopy. Such imaging is possible because the graphene appears transparent at e…
▽ More
Graphene grown epitaxially on SiC has been proposed as a material for carbon-based electronics. Understanding the interface between graphene and the SiC substrate will be important for future applications. We report the ability to image the interface structure beneath single-layer graphene using scanning tunneling microscopy. Such imaging is possible because the graphene appears transparent at energies of 1 eV above or below the Fermi energy. Our analysis of calculations based on density functional theory shows how this transparency arises from the electronic structure of a graphene layer on a SiC substrate.
△ Less
Submitted 19 November, 2007; v1 submitted 15 November, 2007;
originally announced November 2007.
-
Gd disilicide nanowires attached to Si(111) steps
Authors:
J. L. McChesney,
A. Kirakosian,
R. Bennewitza,
J. N. Crain,
J. -L. Lin,
F. J. Himpsel
Abstract:
Self-assembled electronic devices, such as quantum dots or switchable molecules, need self-assembled nanowires as connections. We explore the growth of conducting Gd disilicide nanowires at step arrays on Si(111). Atomically smooth wires with large aspect ratios are formed at low coverage and high growth rate (length >1 micron, width 10nm, height 0.6nm). They grow parallel to the steps in the [-…
▽ More
Self-assembled electronic devices, such as quantum dots or switchable molecules, need self-assembled nanowires as connections. We explore the growth of conducting Gd disilicide nanowires at step arrays on Si(111). Atomically smooth wires with large aspect ratios are formed at low coverage and high growth rate (length >1 micron, width 10nm, height 0.6nm). They grow parallel to the steps in the [-1 1 0 ] direction, which is consistent with a lattice match of 0.8% with the a-axis of the hexagonal silicide, together with a large mismatch in all other directions. This mechanism is similar to that observed previously on Si(100). In contrast to Si(100), the wires are always attached to step edges on Si(111) and can thus be grown selectively on regular step arrays.
△ Less
Submitted 29 July, 2002; v1 submitted 2 May, 2002;
originally announced May 2002.
-
Fermi Surfaces of Surface States on Si(111) + Ag, Au
Authors:
J. N. Crain,
K. N. Altmann,
Ch. Bromberger,
F. J. Himpsel
Abstract:
Metallic surface states on semiconducting substrates provide an opportunity to study low-dimensional electrons decoupled from the bulk. Angle resolved photoemission is used to determine the Fermi surface, group velocity, and effective mass for surface states on Si(111)sqrt3xsqrt3-Ag, Si(111)sqrt3x sqrt3-Au, and Si(111)sqrt21xsqrt21-(Ag+Au). For Si(111)sqrt3xsqrt3-Ag the Fermi surface consists of…
▽ More
Metallic surface states on semiconducting substrates provide an opportunity to study low-dimensional electrons decoupled from the bulk. Angle resolved photoemission is used to determine the Fermi surface, group velocity, and effective mass for surface states on Si(111)sqrt3xsqrt3-Ag, Si(111)sqrt3x sqrt3-Au, and Si(111)sqrt21xsqrt21-(Ag+Au). For Si(111)sqrt3xsqrt3-Ag the Fermi surface consists of small electron pockets populated by electrons from a few percent excess Ag. For Si(111)sqrt21xsqrt21-(Ag+Au) the added Au forms a new, metallic band. The sqrt21xsqrt21 superlattice leads to an intricate surface umklapp pattern and to minigaps of 110 meV, giving an interaction potential of 55 meV for the sqrt21xsqrt21 superlattice.
△ Less
Submitted 1 May, 2002;
originally announced May 2002.
-
Atomic Scale Memory at a Silicon Surface
Authors:
R. Bennewitz,
J. N. Crain,
A. Kirakosian,
J. -L. Lin,
J. L. McChesney,
D. Y. Petrovykh,
F. J. Himpsel
Abstract:
The limits of pushing storage density to the atomic scale are explored with a memory that stores a bit by the presence or absence of one silicon atom. These atoms are positioned at lattice sites along self-assembled tracks with a pitch of 5 atom rows. The writing process involves removal of Si atoms with the tip of a scanning tunneling microscope. The memory can be reformatted by controlled depo…
▽ More
The limits of pushing storage density to the atomic scale are explored with a memory that stores a bit by the presence or absence of one silicon atom. These atoms are positioned at lattice sites along self-assembled tracks with a pitch of 5 atom rows. The writing process involves removal of Si atoms with the tip of a scanning tunneling microscope. The memory can be reformatted by controlled deposition of silicon. The constraints on speed and reliability are compared with data storage in magnetic hard disks and DNA.
△ Less
Submitted 20 June, 2002; v1 submitted 11 April, 2002;
originally announced April 2002.
