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Interfacial ferroelectricity in marginally twisted 2D semiconductors
Authors:
Astrid Weston,
Eli G Castanon,
Vladimir Enaldiev,
Fabio Ferreira,
Shubhadeep Bhattacharjee,
Shuigang Xu,
Hector Corte-Leon,
Zefei Wu,
Nickolas Clark,
Alex Summerfield,
Teruo Hashimoto,
Yunze Gao,
Wendong Wang,
Matthew Hamer,
Harriet Read,
Laura Fumagalli,
Andrey V Kretinin,
Sarah J. Haigh,
Olga Kazakova,
A. K. Geim,
Vladimir I. Fal'ko,
Roman Gorbachev
Abstract:
Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of two 2D crysta…
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Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of two 2D crystals, enables ferroelectric domains with alternating out-of-plane polarisation arranged into a twist-controlled network. The latter can be moved by applying out-of-plane electrical fields, as visualized in situ using channelling contrast electron microscopy. The interfacial charge transfer for the observed ferroelectric domains is quantified using Kelvin probe force microscopy and agrees well with theoretical calculations. The movement of domain walls and their bending rigidity also agrees well with our modelling results. Furthermore, we demonstrate proof-of-principle field-effect transistors, where the channel resistance exhibits a pronounced hysteresis governed by pinning of ferroelectric domain walls. Our results show a potential venue towards room temperature electronic and optoelectronic semiconductor devices with built-in ferroelectric memory functions.
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Submitted 14 August, 2021;
originally announced August 2021.
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Thermoelectric signature of individual skyrmions
Authors:
Alexander Fernández Scarioni,
Craig Barton,
Héctor Corte-León,
Sibylle Sievers,
Xiukun Hu,
Fernando Ajejas,
William Legrand,
Nicolas Reyren,
Vincent Cros,
Olga Kazakova,
Hans W. Schumacher
Abstract:
We experimentally study the thermoelectrical signature of individual skyrmions in chiral Pt/Co/Ru multilayers. Using a combination of controlled nucleation, single skyrmion annihilation, and magnetic field dependent measurements the thermoelectric signature of individual skyrmions is characterized. The observed signature is explained by the anomalous Nernst effect of the skyrmions spin structure.…
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We experimentally study the thermoelectrical signature of individual skyrmions in chiral Pt/Co/Ru multilayers. Using a combination of controlled nucleation, single skyrmion annihilation, and magnetic field dependent measurements the thermoelectric signature of individual skyrmions is characterized. The observed signature is explained by the anomalous Nernst effect of the skyrmions spin structure. Possible topological contributions to the observed thermoelectrical signature are discussed. Such thermoelectrical characterization allows for non-invasive detection and counting of skyrmions and enables fundamental studies of topological thermoelectric effects on the nano scale
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Submitted 17 April, 2020; v1 submitted 28 January, 2020;
originally announced January 2020.
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Individual skyrmion manipulation by local magnetic field gradients
Authors:
Arianna Casiraghi,
Héctor Corte-León,
Mehran Vafaee,
Felipe Garcia-Sanchez,
Gianfranco Durin,
Massimo Pasquale,
Gerhard Jakob,
Mathias Kläui,
Olga Kazakova
Abstract:
Magnetic skyrmions are topologically protected spin textures, stabilised in systems with strong Dzyaloshinskii-Moriya interaction (DMI). Several studies have shown that electrical currents can move skyrmions efficiently through spin-orbit torques. While promising for technological applications, current-driven skyrmion motion is intrinsically collective and accompanied by undesired heating effects.…
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Magnetic skyrmions are topologically protected spin textures, stabilised in systems with strong Dzyaloshinskii-Moriya interaction (DMI). Several studies have shown that electrical currents can move skyrmions efficiently through spin-orbit torques. While promising for technological applications, current-driven skyrmion motion is intrinsically collective and accompanied by undesired heating effects. Here we demonstrate a new approach to control individual skyrmion positions precisely, which relies on the magnetic interaction between sample and a magnetic force microscopy (MFM) probe. We investigate perpendicularly magnetised X/CoFeB/MgO multilayers, where for X = W or Pt the DMI is sufficiently strong to allow for skyrmion nucleation in an applied field. We show that these skyrmions can be manipulated individually through the local field gradient generated by the scanning MFM probe with an unprecedented level of accuracy. Furthermore, we show that the probe stray field can assist skyrmion nucleation. Our proof-of-concepts results offer current-free paradigms to efficient individual skyrmion control.
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Submitted 1 March, 2019;
originally announced March 2019.
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Calibration of multi-layered probes with low/high magnetic moments
Authors:
Vishal Panchal,
Hector Corte-Leon,
Boris Gribkov,
Luis Alfredo Rodriguez,
Etienne Snoeck,
Alessandra Manzin,
Enrico Simonetto,
Silvia Vock,
Volker Neu,
Olga Kazakova
Abstract:
We present a comprehensive method for visualisation and quantification of the magnetic stray field of magnetic force microscopy (MFM) probes, applied to the particular case of custom-made multi-layered probes with controllable high/low magnetic moment states. The probes consist of two decoupled magnetic layers separated by a non-magnetic interlayer, which results in four stable magnetic states: +/…
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We present a comprehensive method for visualisation and quantification of the magnetic stray field of magnetic force microscopy (MFM) probes, applied to the particular case of custom-made multi-layered probes with controllable high/low magnetic moment states. The probes consist of two decoupled magnetic layers separated by a non-magnetic interlayer, which results in four stable magnetic states: +/-ferromagnetic (FM) and +/-antiferromagnetic (A-FM). Direct visualisation of the stray field surrounding the probe apex using electron holography convincingly demonstrates a striking difference in the spatial distribution and strength of the magnetic flux in FM and A-FM states. In situ MFM studies of reference samples are used to determine the probe switching fields and spatial resolution. Furthermore, quantitative values of the probe magnetic moments are obtained by determining their real space tip transfer function (RSTTF). We also map the local Hall voltage in graphene Hall nanosensors induced by the probes in different states. The measured transport properties of nanosensors and RSTTF outcomes are introduced as an input in a numerical model of Hall devices to verify the probe magnetic moments. The modelling results fully match the experimental measurements, outlining an all-inclusive method for the calibration of complex magnetic probes with a controllable low/high magnetic moment.
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Submitted 25 April, 2018;
originally announced April 2018.
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Current Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applications
Authors:
Hanan Mohammed,
Hector Corte-León,
Yurii P. Ivanov,
Sergei Lopatin,
Julian A. Moreno,
Andrey Chuvilin,
Akshaykumar Salimath,
Aurelien Manchon,
Olga Kazakova,
Jurgen Kosel
Abstract:
A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of cobalt and nickel. The material interfaces acting as domain wall pinning sites, are utilized in combination with current pulses, to control the position of the domai…
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A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of cobalt and nickel. The material interfaces acting as domain wall pinning sites, are utilized in combination with current pulses, to control the position of the domain wall, which is monitored using magnetoresistance measurements. Magnetic force microscopy results further confirm the occurrence of current assisted domain wall depinning. Data bits are therefore shifted along the nanowire by sequentially pinning and depinning a domain wall between successive interfaces, a requirement necessary for race-track type memory devices. We demonstrate that the direction, amplitude and duration of the applied current pulses determine the propagation of the domain wall across pinning sites. These results demonstrate a multi-bit cylindrical nanowire device, utilizing current assisted data manipulation. The prospect of sequential pinning and depinning in these nanowires allows the bit density to increase by several Tbs, depending on the number of segments within these nanowires.
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Submitted 18 April, 2018;
originally announced April 2018.
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Magnetic Force Microscopy Imaging Using Geometrically Constrained Nano-Domain Walls
Authors:
Héctor Corte-León,
Luis Alfredo Rodríguez,
Matteo Pancaldi,
David Cox,
Etienne Snoeck,
Vladimir Antonov,
Paolo Vavassori,
Olga Kazakova
Abstract:
Domain wall probes (DW-probes) were custom-made by modifying standard commercial magnetic force microscopy (MFM) probes using focused ion beam lithography. Excess of magnetic coating from the probes was milled out, leaving a V-shaped nanostructure on one face of the probe apex. Owing to the nanostructure's shape anisotropy, such probe has four possible magnetic states depending on the direction of…
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Domain wall probes (DW-probes) were custom-made by modifying standard commercial magnetic force microscopy (MFM) probes using focused ion beam lithography. Excess of magnetic coating from the probes was milled out, leaving a V-shaped nanostructure on one face of the probe apex. Owing to the nanostructure's shape anisotropy, such probe has four possible magnetic states depending on the direction of the magnetization along each arm of the V-shape. Two states of opposite polarity are characterised by the presence of a geometrically constrained DW, pinned at the corner of the V-shape nanostructure. In the other two states, the magnetization curls around the corner with opposite chirality. Electron holography studies, supported by numerical simulations, demonstrate that a strong stray field emanates from the pinned DW, whilst a much weaker stray field is generated by the curling configurations. Using in situ MFM, we show that the magnetization states of the DW-probe can be easily controlled by applying an external magnetic field, thereby demonstrating that this type of probe can be used as a switchable tool with a low or high stray field intensity. We demonstrate that DW-probes enable acquiring magnetic images with a negligible interference with the sample magnetization, similar to that of commercial low moment probes, but with a higher magnetic contrast. In addition, the DW-probe in the curl state provides complementary information about the in-plane component of the sample's magnetization, which is not achievable by standard methods and provides additional information about the stray fields, e.g. as when imaging DWs.
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Submitted 12 April, 2018;
originally announced April 2018.
