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A comprehensive study of the effect of thermally induced surface terminations on nanodiamonds electrical properties
Authors:
Sofia Sturari,
Veronica Varzi,
Pietro Aprà,
Adam Britel,
Nour-Hanne Amine,
Greta Andrini,
Emilio Corte,
Giulia Tomagra,
Lorenzo Mino,
Paolo Olivero,
Federico Picollo
Abstract:
Nanodiamonds (NDs) gained increasing attention in multiple research areas due to the possibility of tuning their physical and chemical features by functionalizing their surface. This has a crucial impact on their electrical properties, which are essential in applications such as the development of innovative sensors and in the biomedical field. The great interest in electrical conduction in NDs ha…
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Nanodiamonds (NDs) gained increasing attention in multiple research areas due to the possibility of tuning their physical and chemical features by functionalizing their surface. This has a crucial impact on their electrical properties, which are essential in applications such as the development of innovative sensors and in the biomedical field. The great interest in electrical conduction in NDs has driven the scientific community to its extensive investigation. The role of various functionalities has been considered and different conduction mechanisms have been proposed. In this work, we reported on a systematic study of the modification of the electrical properties of differently sized NDs, as a function of different thermal treatments in air, hydrogen or inert atmosphere. Samples were electrically characterized in controlled humidity conditions to consider the influence of water on conductivity. NDs electrical properties were interpreted in connection with their surface chemistry and structural features, probed with infrared and Raman spectroscopies. The presence of surface graphite, hydrogen terminations or water adsorbed on hydrophilic oxygen-containing functional groups rendered NDs more conductive. These moieties indeed enabled different conduction mechanisms, which were respectively graphite-mediated conduction, water-induced transfer do** and Grotthus mechanism in surface-adsorbed water. The effect of particles size on conductivity has also been evaluated and discussed. Our experimental findings shed light on the link between surface modifications and electrical properties of NDs, providing at the same time an interpretative key to understanding the effect of particles dimensions.
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Submitted 19 December, 2023;
originally announced December 2023.
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Efficient fabrication of high-density ensembles of color centers via ion implantation on a hot diamond substrate
Authors:
E. Nieto Hernandez,
G. Andrini,
A. Crnjac,
M. Brajkovic,
F. Picariello,
E. Corte,
V. Pugliese,
M. Matijević,
P. Aprà,
V. Varzi,
J. Forneris,
M. Genovese,
Z. Siketic,
M. Jaksic,
S. Ditalia Tchernij
Abstract:
Nitrogen-Vacancy (NV) centers in diamond are promising systems for quantum technologies, including quantum metrology and sensing. A promising strategy for the achievement of high sensitivity to external fields relies on the exploitation of large ensembles of NV centers, whose fabrication by ion implantation is upper limited by the amount of radiation damage introduced in the diamond lattice. In th…
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Nitrogen-Vacancy (NV) centers in diamond are promising systems for quantum technologies, including quantum metrology and sensing. A promising strategy for the achievement of high sensitivity to external fields relies on the exploitation of large ensembles of NV centers, whose fabrication by ion implantation is upper limited by the amount of radiation damage introduced in the diamond lattice. In this works we demonstrate an approach to increase the density of NV centers upon the high-fluence implantation of MeV N2+ ions on a hot target substrate (>550 °C). Our results show that, with respect to room-temperature implantation, the high-temperature process increases the vacancy density threshold required for the irreversible conversion of diamond to a graphitic phase, thus enabling to achieve higher density ensembles. Furthermore, the formation efficiency of color centers was investigated on diamond substrates implanted at varying temperatures with MeV N2+ and Mg+ ions revealing that the formation efficiency of both NV centers and magnesium-vacancy (MgV) centers increases with the implantation temperature.
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Submitted 30 October, 2023;
originally announced October 2023.
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Efficient activation of telecom emitters in silicon upon ns pulsed laser annealing
Authors:
G. Andrini,
G. Zanelli,
S. Ditalia Tchernij,
E. Corte,
E. Nieto Hernandez,
A. Verna,
M. Cocuzza,
E. Bernardi,
S. Virzì,
P. Traina,
I. P. Degiovanni,
M. Genovese,
P. Olivero,
J. Forneris
Abstract:
The recent demonstration of optically active telecom emitters makes silicon a compelling candidate for solid state quantum photonic platforms. Particularly fabrication of the G center has been demonstrated in carbon-rich silicon upon conventional thermal annealing. However, the high-yield controlled fabrication of these emitters at the wafer-scale still requires the identification of a suitable th…
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The recent demonstration of optically active telecom emitters makes silicon a compelling candidate for solid state quantum photonic platforms. Particularly fabrication of the G center has been demonstrated in carbon-rich silicon upon conventional thermal annealing. However, the high-yield controlled fabrication of these emitters at the wafer-scale still requires the identification of a suitable thermodynamic pathway enabling its activation following ion implantation. Here we demonstrate the efficient activation of G centers in high-purity silicon substrates upon ns pulsed laser annealing. The proposed method enables the non-invasive, localized activation of G centers by the supply of short non-stationary pulses, thus overcoming the limitations of conventional rapid thermal annealing related to the structural metastability of the emitters. A finite-element analysis highlights the strong non-stationarity of the technique, offering radically different defect-engineering capabilities with respect to conventional longer thermal treatments, paving the way to the direct and controlled fabrication of emitters embedded in integrated photonic circuits and waveguides.
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Submitted 10 April, 2024; v1 submitted 20 April, 2023;
originally announced April 2023.
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Magnesium-vacancy optical centers in diamond
Authors:
Emilio Corte,
Greta Andrini,
Elena Nieto Hernández,
Vanna Pugliese,
Ângelo Costa,
Goele Magchiels,
Janni Moens,
Shandirai Malven Tunhuma,
Renan Villarreal,
Lino M. C. Pereira,
André Vantomme,
João Guilherme Correia,
Ettore Bernardi,
Paolo Traina,
Ivo Pietro Degiovanni,
Ekaterina Moreva,
Marco Genovese,
Sviatoslav Ditalia Tchernij,
Paolo Olivero,
Ulrich Wahl,
Jacopo Forneris
Abstract:
We provide the first systematic characterization of the structural and photoluminescence properties of optically active defect centers fabricated upon implantation of 30-100 keV Mg+ ions in artificial diamond. The structural configurations of Mg-related defects were studied by the emission channeling technique for 27Mg implantations performed both at room-temperature and 800 °C, which allowed the…
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We provide the first systematic characterization of the structural and photoluminescence properties of optically active defect centers fabricated upon implantation of 30-100 keV Mg+ ions in artificial diamond. The structural configurations of Mg-related defects were studied by the emission channeling technique for 27Mg implantations performed both at room-temperature and 800 °C, which allowed the identification of a major fraction of Mg atoms (~30-42%) in sites which are compatible with the split-vacancy structure of the MgV complex. A smaller fraction of Mg atoms (~13-17%) was found on substitutional sites. The photoluminescence emission was investigated both at the ensemble and individual defect level in a temperature range comprised between 5 K and 300 K, offering a detailed picture of the MgV-related emission properties and revealing the occurrence of previously unreported spectral features. The optical excitability of the MgV center was also studied as a function of the optical excitation wavelength enabling to identify the optimal conditions for photostable and intense emission. The results are discussed in the context of the preliminary experimental data and the theoretical models available in the literature, with appealing perspectives for the utilization of the tunable properties of the MgV center for quantum information processing applications.
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Submitted 17 June, 2022;
originally announced June 2022.
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Spectral emission dependence of tin-vacancy centers in diamond from thermal processing and chemical functionalization
Authors:
Emilio Corte,
Selene Sachero,
Sviatoslav Ditalia Tchernij,
Tobias Lühmann,
Sébastien Pezzagna,
Paolo Traina,
Ivo Pietro Degiovanni,
Ekaterina Moreva,
Paolo Olivero,
Jan Meijer,
Marco Genovese,
Jacopo Forneris
Abstract:
We report a systematic photoluminescence (PL) investigation of the spectral emission properties of individual optical defects fabricated in diamond upon ion implantation and annealing. Three spectral lines at 620 nm, 631 nm, and 647 nm are identified and attributed to the SnV center due to their occurrence in the PL spectra of the very same single-photon emitting defects. We show that the relative…
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We report a systematic photoluminescence (PL) investigation of the spectral emission properties of individual optical defects fabricated in diamond upon ion implantation and annealing. Three spectral lines at 620 nm, 631 nm, and 647 nm are identified and attributed to the SnV center due to their occurrence in the PL spectra of the very same single-photon emitting defects. We show that the relative occurrence of the three spectral features can be modified by oxidizing the sample surface following thermal annealing. We finally report the relevant emission properties of each class of individual emitters, including the excited state emission lifetime and the emission intensity saturation parameters.
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Submitted 14 June, 2021;
originally announced June 2021.
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Spectral features of Pb-related color centers in diamond
Authors:
Sviatoslav Ditalia Tchernij,
Emilio Corte,
Tobias Lühmann,
Paolo Traina,
Sébastien Pezzagna,
Ivo Pietro Degiovanni,
Georgios Provatas,
Ekaterina Moreva,
Jan Meijer,
Paolo Olivero,
Marco Genovese,
Jacopo Forneris
Abstract:
We report on the systematic characterization of the optical properties of diamond color centers based on Pb impurities. An ensemble photoluminescence analysis of their spectral emission was performed at different excitation wavelengths in the 405-520 nm range and at different temperatures in the 4-300 K range. The series of observed spectral features consist of different emission lines associated…
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We report on the systematic characterization of the optical properties of diamond color centers based on Pb impurities. An ensemble photoluminescence analysis of their spectral emission was performed at different excitation wavelengths in the 405-520 nm range and at different temperatures in the 4-300 K range. The series of observed spectral features consist of different emission lines associated with Pb-related defects. Finally, a room-temperature investigation of single-photon emitters under 490.5 nm laser excitation is reported, revealing different spectral signatures with respect to those already reported under 514 nm excitation. This work represents a substantial progress with respect to previous studies on Pb-related color centers, both in the attribution of an articulated series of spectral features and in the understanding of the formation process of this type of defect, thus clarifying the potential of this system for high-impact applications in quantum technologies.
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Submitted 2 June, 2021;
originally announced June 2021.
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Fluorine-based color centers in diamond
Authors:
S. Ditalia Tchernij,
T. Lühmann,
E. Corte,
F. Sardi,
F. Picollo,
P. Traina,
M. Brajkovic,
A. Crnjac,
S. Pezzagna,
I. P. Degiovanni,
E. Moreva,
P. Aprà,
P. Olivero,
Z. Siketić,
J. Meijer,
M. Genovese,
J. Forneris
Abstract:
We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission line at 558 nm and of intense bands in the 600 - 750 nm spectral range. Characterization at liquid He temperature reveals the presence of a structured s…
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We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission line at 558 nm and of intense bands in the 600 - 750 nm spectral range. Characterization at liquid He temperature reveals the presence of a structured set of lines in the 600 - 670 nm spectral range. We discuss the dependence of the emission properties of F-related optical centers on different experimental parameters such as the operating temperature and the excitation wavelength. The correlation of the emission intensity with F implantation fluence, and the exclusive observation of the afore-mentioned spectral features in F-implanted and annealed samples provides a strong indication that the observed emission features are related to a stable F-containing defective complex in the diamond lattice.
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Submitted 9 December, 2020; v1 submitted 28 September, 2020;
originally announced September 2020.
