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First results on monolithic CMOS detector with internal gain
Authors:
U. Follo,
G. Gioachin,
C. Ferrero,
M. Mandurrino,
M. Bregant,
S. Bufalino,
F. Carnesecchi,
D. Cavazza,
M. Colocci,
T. Corradino,
M. Da Rocha Rolo,
G. Di Nicolantonio,
S. Durando,
G. Margutti,
M. Mignone,
R. Nania,
L. Pancheri,
A. Rivetti,
B. Sabiu,
G. G. A. de Souza,
S. Strazzi,
R. Wheadon
Abstract:
In this paper we report on a set of characterisations carried out on the first monolithic LGAD prototype integrated in a customised 110 nm CMOS process having a depleted active volume thickness of 48 $μ$m. This prototype is formed by a pixel array where each pixel has a total size of 100 $μ$m $\times$ 250 $μ$m and includes a high-speed front-end amplifier. After describing the sensor and the elect…
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In this paper we report on a set of characterisations carried out on the first monolithic LGAD prototype integrated in a customised 110 nm CMOS process having a depleted active volume thickness of 48 $μ$m. This prototype is formed by a pixel array where each pixel has a total size of 100 $μ$m $\times$ 250 $μ$m and includes a high-speed front-end amplifier. After describing the sensor and the electronics architecture, both laboratory and in-beam measurements are reported and described. Optical characterisations performed with an IR pulsed laser setup have shown a sensor internal gain of about 2.5. With the same experimental setup, the electronic jitter was found to be between 50 ps and 150 ps, depending on the signal amplitude. Moreover, the analysis of a test beam performed at the Proton Synchrotron (PS) T10 facility of CERN with 10 GeV/c protons and pions indicated that the overall detector time resolution is in the range of 234 ps to 244 ps. Further TCAD investigations, based on the do** profile extracted from $C(V)$ measurements, confirmed the multiplication gain measured on the test devices. Finally, TCAD simulations were used to tune the future do** concentration of the gain layer implant, targeting sensors with a higher avalanche gain. This adjustment is expected to enhance the timing performance of the sensors of the future productions, in order to cope with the high event rate expected in most of the near future high-energy and high-luminosity physics experiments, where the time resolution will be essential to disentangle overlap** events and it will also be crucial for Particle IDentification (PID).
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Submitted 28 June, 2024;
originally announced June 2024.
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Fully Depleted Monolithic Active Microstrip Sensors: TCAD simulation study of an innovative design concept
Authors:
Lorenzo De Cilladi,
Thomas Corradino,
Gian-Franco Dalla Betta,
Coralie Neubüser,
Lucio Pancheri
Abstract:
The paper presents the simulation studies of 10 $μ$m pitch microstrips on a fully depleted monolithic active CMOS technology and describes their potential to provide a new and cost-effective solution for particle tracking and timing applications. The Fully Depleted Monolithic Active Microstrip Sensors (FD-MAMS) described in this work, which are developed within the framework of the ARCADIA project…
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The paper presents the simulation studies of 10 $μ$m pitch microstrips on a fully depleted monolithic active CMOS technology and describes their potential to provide a new and cost-effective solution for particle tracking and timing applications. The Fully Depleted Monolithic Active Microstrip Sensors (FD-MAMS) described in this work, which are developed within the framework of the ARCADIA project, are compliant with commercial CMOS fabrication processes. A TCAD simulation campaign was performed in the perspective of an upcoming engineering production run with the aim of designing FD-MAMS, studying their electrical characteristics and optimising the sensor layout for enhanced performance in terms of low capacitance, fast charge collection and low-power operation. A very fine pitch of 10 $μ$m was chosen to provide very high spatial resolution. This small pitch still allows readout electronics to be monolithically integrated in the inter-strip regions, enabling the segmentation of long strips and the implementation of distributed readout architectures. The effects of surface radiation damage expected for total ionising doses of the order of 10 to 10$^5$ krad were also modelled in the simulations. The results of the simulations exhibit promising performance in terms of timing and low power consumption and motivate R&D efforts to further develop FD-MAMS; the results will be experimentally verified through measurements on the test structures that will be available at the beginning of 2021.
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Submitted 22 January, 2021;
originally announced January 2021.
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Sensor design optimization of innovative low-power, large area MAPS for HEP and applied science
Authors:
Coralie Neubüser,
Thomas Corradino,
Gian-Franco Dalla Betta,
Lorenzo De Cilladi,
Lucio Pancheri
Abstract:
Fully Depleted Monolithic Active Pixels (FD-MAPS) represent a state-of-the-art detector technology and profit from a low material budget and cost for high energy physics experiments and other fields of research like medical imaging and astro-particle physics. Compared to the MAPS currently in use, fully depleted pixel sensors have the advantage of charge collection by drift, which enables a fast a…
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Fully Depleted Monolithic Active Pixels (FD-MAPS) represent a state-of-the-art detector technology and profit from a low material budget and cost for high energy physics experiments and other fields of research like medical imaging and astro-particle physics. Compared to the MAPS currently in use, fully depleted pixel sensors have the advantage of charge collection by drift, which enables a fast and uniform response overall the pixel matrix. The functionality of these devices has been shown in previous proof-of-concept productions. In this article we describe the optimization of the test pixel designs, that will be implemented in the first engineering run of the demonstrator chip of the ARCADIA project. These optimization procedures include radiation damage models, that have been employed in Technology Computer Aided Design simulations to predict the sensors behavior in different working environments.
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Submitted 18 August, 2021; v1 submitted 19 November, 2020;
originally announced November 2020.
