Showing 1–23 of 23 results for author: Corfdir, P

High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN

Authors: J. K. Zettler, C. Hauswald, P. Corfdir, M. Musolino, L. Geelhaar, H. Riechert, O. Brandt, S. Fernández-Garrido

Abstract: In molecular beam epitaxy, the spontaneous formation of GaN nanowires on Si(111) substrates at elevated temperatures is limited by the long incubation time that precedes nanowire nucleation. In this work, we present three unconventional growth approaches to minimize the incubation time and thus facilitate significantly higher growth temperatures (up to 875$^{\circ}$C). We achieve this by: (i) usin… ▽ More In molecular beam epitaxy, the spontaneous formation of GaN nanowires on Si(111) substrates at elevated temperatures is limited by the long incubation time that precedes nanowire nucleation. In this work, we present three unconventional growth approaches to minimize the incubation time and thus facilitate significantly higher growth temperatures (up to 875$^{\circ}$C). We achieve this by: (i) using III/V flux ratios larger than one to compensate for Ga desorption, (ii) introducing a two-step growth procedure, and (iii) using an AlN buffer layer to favor GaN nucleation. The GaN nanowire ensembles grown at so far unexplored substrate temperatures exhibit excitonic transitions with sub-meV linewidths and the low-temperature photoluminescence spectra are comparable to those of state-of-the-art free-standing GaN layers grown by hydride vapor phase epitaxy. △ Less

Submitted 30 January, 2024; originally announced February 2024.

Journal ref: Cryst. Growth Des. 2015, 15, 8, 4104

Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene

Authors: Sergio Fernández-Garrido, Manfred Ramsteiner, Guanhui Gao, Lauren A. Galves, Bharat Sharma, Pierre Corfdir, Gabriele Calabrese, Ziani de Souza Schiaber, Carsten Pfüller, Achim Trampert, João Marcelo J. Lopes, Oliver Brandt, Lutz Geelhaar

Abstract: We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial graphene layer structures synthesized on SiC. The different structures differ mainly in their total number of graphene layers. Because graphene is found to be etched under active N expos… ▽ More We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial graphene layer structures synthesized on SiC. The different structures differ mainly in their total number of graphene layers. Because graphene is found to be etched under active N exposure, the direct growth of GaN nanowires on graphene is only achieved on multilayer graphene structures. The analysis of the nanowire ensembles prepared on multilayer graphene by Raman spectroscopy and transmission electron microscopy reveals the presence of graphene underneath as well as in between nanowires, as desired for the use of this material as contact layer in nanowire-based devices. The nanowires nucleate preferentially at step edges, are vertical, well aligned, epitaxial, and of comparable structural quality as similar structures fabricated on conventional substrates. △ Less

Submitted 30 January, 2024; originally announced January 2024.

Journal ref: Nano Lett. 2017, 17, 9, 5213

Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature

Authors: Johannes K. Zettler, Pierre Corfdir, Christian Hauswald, Esperanza Luna, Uwe Jahn, Timur Flissikowski, Emanuel Schmidt, Carsten Ronning, Achim Trampert, Lutz Geelhaar, Holger T. Grahn, Oliver Brandt, Sergio Fernández-Garrido

Abstract: The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly been employed for enhancing excitonic effects in semiconductor heterostructures. Dielectric confinement, which is potentially much stronger, has proven to be more difficult to achieve because of the rapid nonradiative s… ▽ More The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly been employed for enhancing excitonic effects in semiconductor heterostructures. Dielectric confinement, which is potentially much stronger, has proven to be more difficult to achieve because of the rapid nonradiative surface/interface recombination in hybrid dielectric-semiconductor structures. Here, we demonstrate intense excitonic emission from bare GaN nanowires with diameters down to 6 nm. The large dielectric mismatch between the nanowires and vacuum greatly enhances the Coulomb interaction, with the thinnest nanowires showing the strongest dielectric confinement and the highest radiative efficiency at room temperature. In situ monitoring of the fabrication of these structures allows one to accurately control the degree of dielectric enhancement. These ultrathin nanowires may constitute the basis for the fabrication of advanced low-dimensional structures with an unprecedented degree of confinement. △ Less

Submitted 30 January, 2024; originally announced January 2024.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters, after peer review

Journal ref: Nano Letters 2016, 16, 2, 973

Drastic effect of sequential deposition resulting from flux directionality on the luminescence efficiency of nanowire shells

Authors: Hanno Küpers, Ryan B. Lewis, Pierre Corfdir, Michael Niehle, Timur Flissikowski, Holger T. Grahn, Achim Trampert, Oliver Brandt, Lutz Geelhaar

Abstract: Core-shell nanowire heterostructures form the basis for many innovative devices. When compound nanowire shells are grown by directional deposition techniques, the azimuthal position of the sources for the different constituents in the growth reactor, substrate rotation, and nanowire self-shadowing inevitably lead to sequential deposition. Here, we uncover for In$_{0.15}$Ga$_{0.85}$As/GaAs shell qu… ▽ More Core-shell nanowire heterostructures form the basis for many innovative devices. When compound nanowire shells are grown by directional deposition techniques, the azimuthal position of the sources for the different constituents in the growth reactor, substrate rotation, and nanowire self-shadowing inevitably lead to sequential deposition. Here, we uncover for In$_{0.15}$Ga$_{0.85}$As/GaAs shell quantum wells grown by molecular beam epitaxy a drastic impact of this sequentiality on the luminescence efficiency. The photoluminescence intensity of shell quantum wells grown with a flux sequence corresponding to migration enhanced epitaxy, i. e. when As and the group-III metals essentially do not im**e at the same time, is more than two orders of magnitude higher than for shell quantum wells prepared with substantially overlap** fluxes. Transmission electron microscopy does not reveal any extended defects explaining this difference. Our analysis of photoluminescence transients shows that co-deposition has two detrimental microscopic effects. First, a higher density of electrically active point defects leads to internal electric fields reducing the electron-hole wave function overlap. Second, more point defects form that act as nonradiative recombination centers. Our study demonstrates that the source arrangement of the growth reactor, which is of mere technical relevance for planar structures, can have drastic consequences for the materials properties of nanowire shells. We expect that this finding holds also for other alloy nanowire shells. △ Less

Submitted 23 June, 2021; originally announced June 2021.

Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires

Authors: G. Calabrese, D. van Treeck, V. M. Kaganer, O. Konovalov, P. Corfdir, C. Sinito, L. Geelhaar, O. Brandt, S. Fernández-Garrido

Abstract: We investigate the strain state of ensembles of thin and nearly coalescence-free self-assembled GaN nanowires prepared by plasma-assisted molecular beam epitaxy on Ti/Al$_{2}$O$_{3}(0001)$ substrates. The shifts of Bragg peaks in high-resolution X-ray diffraction profiles reveal the presence of a homogeneous tensile strain in the out-of-plane direction. This strain is inversely proportional to the… ▽ More We investigate the strain state of ensembles of thin and nearly coalescence-free self-assembled GaN nanowires prepared by plasma-assisted molecular beam epitaxy on Ti/Al$_{2}$O$_{3}(0001)$ substrates. The shifts of Bragg peaks in high-resolution X-ray diffraction profiles reveal the presence of a homogeneous tensile strain in the out-of-plane direction. This strain is inversely proportional to the average nanowire radius and results from the surface stress acting on the nanowire sidewalls. The superposition of strain from nanowires with different radii in the same ensemble results in a broadening of the Bragg peaks that mimics an inhomogeneous strain on a macroscopic scale. The nanowire ensembles show a small blueshift of the bound-exciton transitions in photoluminescence spectra, reflecting the existence of a compensating in-plane compressive strain, as further supported by grazing incidence x-ray diffraction measurements carried out at a synchrotron. By combining X-ray diffraction and photoluminescence spectroscopy, the surface stress components $f_{x}$ and $f_{z}$ of the air-exposed GaN$\{1\bar100\}$ planes that constitute the nanowire sidewalls are determined experimentally to be 2.25 and $-0.7$~N/m, respectively. △ Less

Submitted 22 February, 2020; originally announced February 2020.

Comments: 22 pages, 8 figures

Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band

Authors: Jesús Herranz, Pierre Corfdir, Esperanza Luna, Uwe Jahn, Ryan B. Lewis, Lutz Schrottke, Jonas Lähnemann, Abbes Tahraoui, Achim Trampert, Oliver Brandt, Lutz Geelhaar

Abstract: Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optical connections. We introduce and fabricate a novel coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructure to reach spontaneous emission in the Si transparent region, which is crucial for applications in Si photonic… ▽ More Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optical connections. We introduce and fabricate a novel coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructure to reach spontaneous emission in the Si transparent region, which is crucial for applications in Si photonics. Specifically, we achieve room temperature emission at 1.27 $μ$m in the telecommunication O band. The presence of quantum dots in the heterostructure is evidenced by a structural analysis based on scanning transmission electron microscopy. The spontaneous emission of these nanowire structures is investigated by cathodoluminescence and photoluminescence spectroscopy. Thermal redistribution of charge carriers to larger quantum dots explains the long wavelength emission achieved at room temperature. Finally, in order to demonstrate the feasibility of the presented nanowire heterostructures as electrically driven light emitters monolithically integrated on Si, a light emitting diode is fabricated exhibiting room-temperature electroluminescence at 1.26 $μ$m. △ Less

Submitted 18 December, 2019; v1 submitted 27 August, 2019; originally announced August 2019.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in ACS Applied Nano Materials (2019), copyright (C) American Chemical Society after peer review. To access the final edited and published work see this https://doi.org/10.1021/acsanm.9b01866, the supporting information is available (free of charge) under the same link

Journal ref: ACS Applied Nano Materials 3, 165 (2020)

Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy

Authors: C. Sinito, P. Corfdir, C. Pfüller, G. Gao, J. Bartolomé Vílchez, S. Kölling, A. Rodil Doblado, U. Jahn, J. Lähnemann, T. Auzelle, J. K. Zettler, T. Flissikowski, P. Koenraad, H. T. Grahn, L. Geelhaar, S. Fernández-Garrido, O. Brandt

Abstract: Several of the key issues of planar (Al,Ga)N-based deep-ultraviolet light emitting diodes could potentially be overcome by utilizing nanowire heterostructures, exhibiting high structural perfection and improved light extraction. Here, we study the spontaneous emission of GaN/(Al,Ga)N nanowire ensembles grown on Si(111) by plasma-assisted molecular beam epitaxy. The nanowires contain single GaN qua… ▽ More Several of the key issues of planar (Al,Ga)N-based deep-ultraviolet light emitting diodes could potentially be overcome by utilizing nanowire heterostructures, exhibiting high structural perfection and improved light extraction. Here, we study the spontaneous emission of GaN/(Al,Ga)N nanowire ensembles grown on Si(111) by plasma-assisted molecular beam epitaxy. The nanowires contain single GaN quantum disks embedded in long (Al,Ga)N nanowire segments essential for efficient light extraction. These quantum disks are found to exhibit intense emission at unexpectedly high energies, namely, significantly above the GaN bandgap, and almost independent of the disk thickness. An in-depth investigation of the actual structure and composition of the nanowires reveals a spontaneously formed Al gradient both along and across the nanowire, resulting in a complex core/shell structure with an Al deficient core and an Al rich shell with continuously varying Al content along the entire length of the (Al,Ga)N segment. This compositional change along the nanowire growth axis induces a polarization do** of the shell that results in a degenerate electron gas in the disk, thus screening the built-in electric fields. The high carrier density not only results in the unexpectedly high transition energies, but also in radiative lifetimes depending only weakly on temperature, leading to a comparatively high internal quantum efficiency of the GaN quantum disks up to room temperature. △ Less

Submitted 8 August, 2019; v1 submitted 10 May, 2019; originally announced May 2019.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters (2019), copyright (C) American Chemical Society after peer review. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.9b01521, the supporting information is available (free of charge) under the same link

Journal ref: Nano Letters 19, 5938 (2019)

Fine structure of excitons in InAs quantum dots on GaAs(110) planar layers and nanowire facets

Authors: Pierre Corfdir, Ryan B. Lewis, Lutz Geelhaar, Oliver Brandt

Abstract: We investigate the optical properties of InAs quantum dots grown by molecular beam epitaxy on GaAs(110) using Bi as a surfactant. The quantum dots are synthesized on planar GaAs(110) substrates as well as on the {110} sidewall facets of GaAs nanowires. At 10 K, neutral excitons confined in these quantum dots give rise to photoluminescence lines between 1.1 and 1.4 eV. Magneto-photoluminescence spe… ▽ More We investigate the optical properties of InAs quantum dots grown by molecular beam epitaxy on GaAs(110) using Bi as a surfactant. The quantum dots are synthesized on planar GaAs(110) substrates as well as on the {110} sidewall facets of GaAs nanowires. At 10 K, neutral excitons confined in these quantum dots give rise to photoluminescence lines between 1.1 and 1.4 eV. Magneto-photoluminescence spectroscopy reveals that for small quantum dots emitting between 1.3 and 1.4 eV, the electron-hole coherence length in and perpendicular to the (110) plane is on the order of 5 and 2 nm, respectively. The quantum dot photoluminescence is linearly polarized, and both binding and antibinding biexcitons are observed, two findings that we associate with the strain in the (110) plane This strain leads to piezoelectric fields and to a strong mixing between heavy and light hole states, and offers the possibility to tune the degree of linear polarization of the exciton photoluminescence as well as the sign of the binding energy of biexcitons. △ Less

Submitted 27 April, 2017; originally announced April 2017.

Journal ref: Phys. Rev. B 96, 045435 (2017)

Modelling the electronic properties of GaAs polytype nanostructures: impact of strain on the conduction band character

Authors: Oliver Marquardt, Manfred Ramsteiner, Pierre Corfdir, Lutz Geelhaar, Oliver Brandt

Abstract: We study the electronic properties of GaAs nanowires composed of both the zincblende and wurtzite modifications using a ten-band k.p model. In the wurtzite phase, two energetically close conduction bands are of importance for the confinement and the energy levels of the electron ground state. These bands form two intersecting potential landscapes for electrons in zincblende/wurtzite nanostructures… ▽ More We study the electronic properties of GaAs nanowires composed of both the zincblende and wurtzite modifications using a ten-band k.p model. In the wurtzite phase, two energetically close conduction bands are of importance for the confinement and the energy levels of the electron ground state. These bands form two intersecting potential landscapes for electrons in zincblende/wurtzite nanostructures. The energy difference between the two bands depends sensitively on strain, such that even small strains can reverse the energy ordering of the two bands. This reversal may already be induced by the non-negligible lattice mismatch between the two crystal phases in polytype GaAs nanostructures, a fact that was ignored in previous studies of these structures. We present a systematic study of the influence of intrinsic and extrinsic strain on the electron ground state for both purely zincblende and wurtzite nanowires as well as for polytype superlattices. The coexistence of the two conduction bands and their opposite strain dependence results in complex electronic and optical properties of GaAs polytype nanostructures. In particular, both the energy and the polarization of the lowest intersubband transition depends on the relative fraction of the two crystal phases in the nanowire. △ Less

Submitted 27 April, 2017; originally announced April 2017.

Comments: 8 pages / 6 figures

Journal ref: Phys. Rev. B 95, 245309 (2017)

Self-assembly of InAs nanostructures on the sidewalls of GaAs nanowires directed by a Bi surfactant

Authors: Ryan B. Lewis, Pierre Corfdir, Jesús Herranz, Hanno Küpers, Uwe Jahn, Oliver Brandt, Lutz Geelhaar

Abstract: Surface energies play a dominant role in the self-assembly of three dimensional (3D) nanostructures. In this letter, we show that using surfactants to modify surface energies can provide a means to externally control nanostructure self-assembly, enabling the synthesis of novel hierarchical nanostructures. We explore Bi as a surfactant in the growth of InAs on the {1-10} sidewall facets of GaAs nan… ▽ More Surface energies play a dominant role in the self-assembly of three dimensional (3D) nanostructures. In this letter, we show that using surfactants to modify surface energies can provide a means to externally control nanostructure self-assembly, enabling the synthesis of novel hierarchical nanostructures. We explore Bi as a surfactant in the growth of InAs on the {1-10} sidewall facets of GaAs nanowires. The presence of surface Bi induces the formation of InAs 3D islands by a process resembling the Stranski-Krastanov mechanism, which does not occur in the absence of Bi on these surfaces. The InAs 3D islands nucleate at the corners of the {1-10} facets above a critical shell thickness and then elongate along <110> directions in the plane of the nanowire sidewalls. Exploiting this growth mechanism, we realize a series of novel hierarchical nanostructures, ranging from InAs quantum dots on single {1-10} nanowire facets to zig-zag shaped nanorings completely encircling nanowire cores. Photoluminescence spectroscopy and cathodoluminescence spectral line scans reveal that small surfactant-induced InAs 3D islands behave as optically active quantum dots. This work illustrates how surfactants can provide an unprecedented level of external control over nanostructure self-assembly. △ Less

Submitted 26 April, 2017; originally announced April 2017.

Comments: 12 pages, 4 figures

Journal ref: Nano Lett. 2017, 17, 4255-4260

Quantum dot self-assembly driven by a surfactant-induced morphological instability

Authors: Ryan B. Lewis, Pierre Corfdir, Hong Li, Jesús Herranz, Carsten Pfüller, Oliver Brandt, Lutz Geelhaar

Abstract: In strained heteroepitaxy, two-dimensional (2D) layers can exhibit a critical thickness at which three-dimensional (3D) islands self-assemble, relieving misfit strain at the cost of an increased surface area. Here we show that such a morphological phase transition can be induced on-demand using surfactants. We explore Bi as a surfactant in the growth of InAs on GaAs(110), and find that the presenc… ▽ More In strained heteroepitaxy, two-dimensional (2D) layers can exhibit a critical thickness at which three-dimensional (3D) islands self-assemble, relieving misfit strain at the cost of an increased surface area. Here we show that such a morphological phase transition can be induced on-demand using surfactants. We explore Bi as a surfactant in the growth of InAs on GaAs(110), and find that the presence of surface Bi induces Stranski-Krastanov growth of 3D islands, while growth without Bi always favors 2D layer formation. Exposing a static two monolayer thick InAs layer to Bi rapidly transforms the layer into 3D islands. Density functional theory calculations reveal that Bi reduces the energetic cost of 3D island formation by modifying surface energies. These 3D nanostructures behave as optically active quantum dots. This work illustrates how surfactants can enable quantum dot self-assembly where it otherwise would not occur. △ Less

Submitted 15 March, 2017; originally announced March 2017.

Journal ref: Phys. Rev. Lett. 119, 086101 (2017)

Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)

Authors: Carsten Pfüller, Pierre Corfdir, Christian Hauswald, Timur Flissikowski, Xiang Kong, Johannes K. Zettler, Sergio Fernández-Garrido, Pınar Doğan, Holger T. Grahn, Achim Trampert, Lutz Geelhaar, Oliver Brandt

Abstract: We investigate the 3.45-eV luminescence band of spontaneously formed GaN nanowires on Si(111) by photoluminescence and cathodoluminescence spectroscopy. This band is found to be particularly prominent for samples synthesized at comparatively low temperatures. At the same time, these samples exhibit a peculiar morphology, namely, isolated long nanowires are interspersed within a dense matrix of sho… ▽ More We investigate the 3.45-eV luminescence band of spontaneously formed GaN nanowires on Si(111) by photoluminescence and cathodoluminescence spectroscopy. This band is found to be particularly prominent for samples synthesized at comparatively low temperatures. At the same time, these samples exhibit a peculiar morphology, namely, isolated long nanowires are interspersed within a dense matrix of short ones. Cathodoluminescence intensity maps reveal the 3.45-eV band to originate primarily from the long nanowires. Transmission electron microscopy shows that these long nanowires are either Ga polar and are joined by an inversion domain boundary with their short N-polar neighbors, or exhibit a Ga-polar core surrounded by a N-polar shell with a tubular inversion domain boundary at the core/shell interface. For samples grown at high temperatures, which exhibit a uniform nanowire morphology, the 3.45-eV band is also found to originate from particular nanowires in the ensemble and thus presumably from inversion domain boundaries stemming from the coexistence of N- and Ga-polar nanowires. For several of the investigated samples, the 3.45-eV band splits into a doublet. We demonstrate that the higher-energy component of this doublet arises from the recombination of two-dimensional excitons free to move in the plane of the inversion domain boundary. In contrast, the lower-energy component of the doublet originates from excitons localized in the plane of the inversion domain boundary. We propose that this in-plane localization is due to shallow donors in the vicinity of the inversion domain boundaries. △ Less

Submitted 19 October, 2016; v1 submitted 14 July, 2016; originally announced July 2016.

Comments: 24 pages, 12 figures, 1 table

Journal ref: Phys. Rev. B 94, 155308 (2016)

Exciton dynamics in GaAs/(Al,Ga)As core-shell nanowires with shell quantum dots

Authors: Pierre Corfdir, Hanno Küpers, Ryan B. Lewis, Timur Flissikowski, Holger T. Grahn, Lutz Geelhaar, Oliver Brandt

Abstract: We study the dynamics of excitons in GaAs/(Al,Ga)As core-shell nanowires by continuous-wave and time-resolved photoluminescence and photoluminescence excitation spectroscopy. Strong Al segregation in the shell of the nanowires leads to the formation of Ga-rich inclusions acting as quantum dots. At 10 K, intense light emission associated with these shell quantum dots is observed. The average radiat… ▽ More We study the dynamics of excitons in GaAs/(Al,Ga)As core-shell nanowires by continuous-wave and time-resolved photoluminescence and photoluminescence excitation spectroscopy. Strong Al segregation in the shell of the nanowires leads to the formation of Ga-rich inclusions acting as quantum dots. At 10 K, intense light emission associated with these shell quantum dots is observed. The average radiative lifetime of excitons confined in the shell quantum dots is 1.7 ns. We show that excitons may tunnel toward adjacent shell quantum dots and nonradiative point defects. We investigate the changes in the dynamics of charge carriers in the shell with increasing temperature, with particular emphasis on the transfer of carriers from the shell to the core of the nanowires. We finally discuss the implications of carrier localization in the (Al,Ga)As shell for fundamental studies and optoelectronic applications based on core-shell III-As nanowires. △ Less

Submitted 4 August, 2016; v1 submitted 3 March, 2016; originally announced March 2016.

Journal ref: Phys. Rev. B 94, 155413 (2016)

Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil

Authors: Gabriele Calabrese, Pierre Corfdir, Guanhui Gao, Carsten Pfüller, Achim Trampert, Oliver Brandt, Lutz Geelhaar, Sergio Fernández-Garrido

Abstract: We demonstrate the self-assembled growth of vertically aligned GaN nanowire ensembles on a flexible Ti foil by plasma-assisted molecular beam epitaxy. The analysis of single nanowires by transmission electron microscopy reveals that they are single crystalline. Low-temperature photoluminescence spectroscopy demonstrates that, in comparison to standard GaN nanowires grown on Si, the nanowires prepa… ▽ More We demonstrate the self-assembled growth of vertically aligned GaN nanowire ensembles on a flexible Ti foil by plasma-assisted molecular beam epitaxy. The analysis of single nanowires by transmission electron microscopy reveals that they are single crystalline. Low-temperature photoluminescence spectroscopy demonstrates that, in comparison to standard GaN nanowires grown on Si, the nanowires prepared on the Ti foil exhibit a equivalent crystalline perfection, a higher density of basal-plane stacking faults, but a reduced density of inversion domain boundaries. The room-temperature photoluminescence spectrum of the nanowire ensemble is not influenced or degraded by the bending of the substrate. The present results pave the way for the fabrication of flexible optoelectronic devices based on GaN nanowires on metal foils. △ Less

Submitted 19 February, 2016; originally announced February 2016.

Comments: 4 pages, 3 figures

Radial Stark effect in (In,Ga)N nanowires

Authors: Jonas Lähnemann, Pierre Corfdir, Felix Feix, Jumpei Kamimura, Timur Flissikowski, Holger T. Grahn, Lutz Geelhaar, and Oliver Brandt

Abstract: We study the luminescence of unintentionally doped and Si-doped In$_x$Ga$_{1-x}$N nanowires with a low In content (x<0.2) grown by molecular beam epitaxy on Si substrates. The emission band observed at 300 K from the unintentionally doped samples is centered at much lower energies (800 meV) than expected from the In content measured by x-ray diffractometry and energy dispersive x-ray spectroscopy.… ▽ More We study the luminescence of unintentionally doped and Si-doped In$_x$Ga$_{1-x}$N nanowires with a low In content (x<0.2) grown by molecular beam epitaxy on Si substrates. The emission band observed at 300 K from the unintentionally doped samples is centered at much lower energies (800 meV) than expected from the In content measured by x-ray diffractometry and energy dispersive x-ray spectroscopy. This discrepancy arises from the pinning of the Fermi level at the sidewalls of the nanowires, which gives rise to strong radial built-in electric fields. The combination of the built-in electric fields with the compositional fluctuations inherent to (In,Ga)N alloys induces a competition between spatially direct and indirect recombination channels. At elevated temperatures, electrons at the core of the nanowire recombine with holes close to the surface, and the emission from unintentionally doped nanowires exhibits a Stark shift of several hundreds of meV. The competition between spatially direct and indirect transitions is analyzed as a function of temperature for samples with various Si concentrations. We propose that the radial Stark effect is responsible for the broadband absorption of (In,Ga)N nanowires across the entire visible range, which makes these nanostructures a promising platform for solar energy applications. △ Less

Submitted 21 June, 2017; v1 submitted 26 January, 2016; originally announced January 2016.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters (2016), copyright (C) American Chemical Society after peer review. To access the final edited and published work see http://dx.doi.org/10.1021/acs.nanolett.5b03748

Journal ref: Nano Letters 16, 917 (2016)

Crystal-phase quantum dots in GaN quantum wires

Authors: P. Corfdir, C. Hauswald, O. Marquardt, T. Flissikowski, J. K. Zettler, S. Fernández-Garrido, L. Geelhaar, H. T. Grahn, O. Brandt

Abstract: We study the nature of excitons bound to I1 basal plane stacking faults in ensembles of ultrathin GaN nanowires by continuous-wave and time-resolved photoluminescence spectroscopy. These ultrathin nanowires, obtained by the thermal decomposition of spontaneously formed GaN nanowire ensembles, are tapered and have tip diameters down to 6 nm. With decreasing nanowire diameter, we observe a strong bl… ▽ More We study the nature of excitons bound to I1 basal plane stacking faults in ensembles of ultrathin GaN nanowires by continuous-wave and time-resolved photoluminescence spectroscopy. These ultrathin nanowires, obtained by the thermal decomposition of spontaneously formed GaN nanowire ensembles, are tapered and have tip diameters down to 6 nm. With decreasing nanowire diameter, we observe a strong blue shift of the transition originating from the radiative decay of stacking fault-bound excitons. Moreover, the radiative lifetime of this transition in the ultrathin nanowires is independent of temperature up to 60 K and significantly longer than that of the corresponding transition in as-grown nanowires. These findings reveal a zero-dimensional character of the confined exciton state and thus demonstrate that I1 stacking faults in ultrathin nanowires act as genuine quantum dots. △ Less

Submitted 17 February, 2016; v1 submitted 6 January, 2016; originally announced January 2016.

Journal ref: Phys. Rev. B 93, 115305 (2016)

Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process

Authors: Johannes K. Zettler, Pierre Corfdir, Lutz Geelhaar, Henning Riechert, Oliver Brandt, Sergio Fernández-Garrido

Abstract: We investigate the influence of modified growth conditions during the spontaneous formation of GaN nanowires on Si(111) in plasma-assisted molecular beam epitaxy. We find that a two-step growth approach, where the substrate temperature is increased during the nucleation stage, is an efficient method to gain control over the area coverage, average diameter, and coalescence degree of GaN nanowire en… ▽ More We investigate the influence of modified growth conditions during the spontaneous formation of GaN nanowires on Si(111) in plasma-assisted molecular beam epitaxy. We find that a two-step growth approach, where the substrate temperature is increased during the nucleation stage, is an efficient method to gain control over the area coverage, average diameter, and coalescence degree of GaN nanowire ensembles. Furthermore, we also demonstrate that the growth conditions employed during the incubation time that precedes nanowire nucleation do not influence the properties of the final nanowire ensemble. Therefore, when growing GaN nanowires at elevated temperatures or with low Ga/N ratios, the total growth time can be reduced significantly by using more favorable growth conditions for nanowire nucleation during the incubation time. △ Less

Submitted 25 August, 2015; originally announced August 2015.

Stacking faults as quantum wells in nanowires: Density of states, oscillator strength and radiative efficiency

Authors: P. Corfdir, C. Hauswald, J. K. Zettler, T. Flissikowski, J. Lähnemann, S. Fernández-Garrido, L. Geelhaar, H. T. Grahn, O. Brandt

Abstract: We investigate the nature of excitons bound to I1 basal-plane stacking faults [(I1;X)] in GaN nanowire ensembles by continuous-wave and time-resolved photoluminescence spectroscopy. Based on the linear increase of the radiative lifetime of these excitons with temperature, they are demonstrated to exhibit a two-dimensional density of states, i. e., a basal-plane stacking fault acts as a quantum wel… ▽ More We investigate the nature of excitons bound to I1 basal-plane stacking faults [(I1;X)] in GaN nanowire ensembles by continuous-wave and time-resolved photoluminescence spectroscopy. Based on the linear increase of the radiative lifetime of these excitons with temperature, they are demonstrated to exhibit a two-dimensional density of states, i. e., a basal-plane stacking fault acts as a quantum well. From the slope of the linear increase, we determine the oscillator strength of the (I1;X) and show that the value obtained reflects the presence of large internal electrostatic fields across the stacking fault. While the recombination of donor-bound and free excitons in the GaN nanowire ensemble is dominated by nonradiative phenonema already at 10 K, we observe that the (I1;X) recombines purely radiatively up to 60 K. This finding provides important insight into the nonradiative recombination processes in GaN nanowires. First, the radiative lifetime of about 6 ns measured at 60 K sets an upper limit for the surface recombination velocity of 450 cm/s considering the nanowires mean diameter of 105 nm. Second, the density of nonradiative centers responsible for the fast decay of donor-bound and free excitons cannot be higher than 2x10^16 cm^-3. As a consequence, the nonradiative decay of donor-bound excitons in these GaN nanowire ensembles has to occur indirectly via the free exciton state. △ Less

Submitted 22 August, 2014; originally announced August 2014.

Journal ref: Phys. Rev. B 90, 195309 (2014)

Investigating the origin of the nonradiative decay of bound excitons in GaN nanowires

Authors: Christian Hauswald, Pierre Corfdir, Johannes K. Zettler, Vladimir M. Kaganer, Karl K. Sabelfeld, Sergio Fernández-Garrido, Timur Flissikowski, Vincent Consonni, Tobias Gotschke, Holger T. Grahn, Lutz Geelhaar, Oliver Brandt

Abstract: We investigate the origin of the fast recombination dynamics of bound and free excitons in GaN nanowire ensembles by temperature-dependent photoluminescence spectroscopy using both continuous-wave and pulsed excitation. The exciton recombination in the present GaN nanowires is dominated by a nonradiative channel between 10 and 300 K. Furthermore, bound and free excitons in GaN NWs are strongly cou… ▽ More We investigate the origin of the fast recombination dynamics of bound and free excitons in GaN nanowire ensembles by temperature-dependent photoluminescence spectroscopy using both continuous-wave and pulsed excitation. The exciton recombination in the present GaN nanowires is dominated by a nonradiative channel between 10 and 300 K. Furthermore, bound and free excitons in GaN NWs are strongly coupled even at low temperatures resulting in a common lifetime of these states. By solving the rate equations for a coupled two-level system, we show that one cannot, in practice, distinguish whether the nonradiative decay occurs directly via the bound or indirectly via the free state. The nanowire surface and coalescence-induced dislocations appear to be the most obvious candidates for nonradiative defects, and we thus compare the exciton decay times measured for a variety of GaN nanowire ensembles with different surface-to-volume ratio and coalescence degrees. The data are found to exhibit no correlation with either of these parameters, i. e., the dominating nonradiative channel in the GaN nanowires under investigation is neither related to the nanowire surface, nor to coalescence-induced defects for the present samples. Hence, we conclude that nonradiative point defects are the origin of the fast recombination dynamics of excitons in GaN nanowires. △ Less

Submitted 6 August, 2014; originally announced August 2014.

Comments: 10 pages, 5 figures

Journal ref: Phys. Rev. B 90, 165304 (2014)

Sub-meV linewidth in GaN nanowire ensembles: absence of surface excitons due to the field-ionization of donors

Authors: Pierre Corfdir, Johannes K. Zettler, Christian Hauswald, Sergio Fernandez-Garrido, Oliver Brandt, Pierre Lefebvre

Abstract: We observe unusually narrow donor-bound exciton transitions (0.4 meV) in the photoluminescence spectra of GaN nanowire ensembles grown on Si(111) substrates at very high (> 850 degrees Celsius) temperatures. The spectra of these samples reveal a prominent transition of excitons bound to neutral Si impurities which is not observed for samples grown under standard conditions. Motivated by these expe… ▽ More We observe unusually narrow donor-bound exciton transitions (0.4 meV) in the photoluminescence spectra of GaN nanowire ensembles grown on Si(111) substrates at very high (> 850 degrees Celsius) temperatures. The spectra of these samples reveal a prominent transition of excitons bound to neutral Si impurities which is not observed for samples grown under standard conditions. Motivated by these experimental results, we investigate theoretically the impact of surface-induced internal electric fields on the binding energy of donors by a combined Monte Carlo and envelope function approach. We obtain the ranges of do** and diameter for which the potential is well described using the Poisson equation, where one assumes a spatially homogeneous distribution of dopants. Our calculations also show that surface donors in nanowires with a diameter smaller than 100 nm are ionized when the surface electric field is larger than about 10 kV/cm, corresponding to a do** level higher than 2 x 10^16 cm^-3. This result explains the experimental observation: since the (D+,X) complex is not stable in GaN, surface-donor-bound excitons do not contribute to the photoluminescence spectra of GaN nanowires above a certain do** level, and the linewidth reflects the actual structural perfection of the nanowire ensemble. △ Less

Submitted 16 July, 2014; originally announced July 2014.

Journal ref: Phys. Rev. B 90, 205301 (2014)

Complex optical signatures from quantum dot nanostructures and behavior in inverted pyramidal recesses

Authors: G. Juska, V. Dimastrodonato, L. O. Mereni, T. H. Chung, A. Gocalinska, E. Pelucchi, B. Van Hattem, M. Ediger, P. Corfdir

Abstract: A study of previously overlooked structural and optical properties of InGaAs heterostructures grown on (111)B oriented GaAs substrates patterned with inverted 7.5 um pitch pyramidal recesses is presented. First, the composition of the confinement barrier material (GaAs in this work) and its growth temperature are shown as some of the key parameters that determine the main quantum dot properties, i… ▽ More A study of previously overlooked structural and optical properties of InGaAs heterostructures grown on (111)B oriented GaAs substrates patterned with inverted 7.5 um pitch pyramidal recesses is presented. First, the composition of the confinement barrier material (GaAs in this work) and its growth temperature are shown as some of the key parameters that determine the main quantum dot properties, including nontrivial emission energy dependence, excitonic pattern and unusual photoluminescence energetic ordering of the InGaAs ensemble nanostructures. Secondly, the formation of a formerly unidentified type of InGaAs nanostructures - three corner quantum dots - is demonstrated in our structures next to the well-known ones (a quantum dot and three lateral quantum wires and quantum wells). The findings show the complexity of the pyramidal quantum dot system which strongly depends on the sample design and which should be considered when selecting highly symmetric (central) quantum dots in newly designed experimental projects. △ Less

Submitted 2 July, 2014; originally announced July 2014.

Exciton Footprint of Self-assembled AlGaAs Quantum Dots in Core-Shell Nanowires

Authors: Yannik Fontana, Pierre Corfdir, Barbara Van Hattem, Eleonora Russo-Averchi, Martin Heiss, Samuel Sonderegger, Cesar Magen, Jordi Arbiol, Richard T. Phillips, Anna Fontcuberta i Morral

Abstract: Quantum-dot-in-nanowire systems constitute building blocks for advanced photonics and sensing applications. The electronic symmetry of the emitters impacts their function capabilities. Here, we study the fine structure of gallium-rich quantum dots nested in the shell of GaAs-AlGaAs core-shell nanowires. We used optical spectroscopy to resolve the splitting resulting from the exchange terms and ext… ▽ More Quantum-dot-in-nanowire systems constitute building blocks for advanced photonics and sensing applications. The electronic symmetry of the emitters impacts their function capabilities. Here, we study the fine structure of gallium-rich quantum dots nested in the shell of GaAs-AlGaAs core-shell nanowires. We used optical spectroscopy to resolve the splitting resulting from the exchange terms and extract the main parameters of the emitters. Our results indicate that the quantum dots can host neutral as well as charges excitonic complexes and that the excitons exhibit a slightly elongated footprint, with the main axis tilted with respect to the growth axis. GaAs-AlGaAs emitters in a nanowire are particularly promising for overcoming the limitations set by strain in other systems, with the benefit of being integrated in a versatile photonic structure. △ Less

Submitted 23 July, 2014; v1 submitted 1 June, 2014; originally announced June 2014.

Journal ref: Phys. Rev. B, 90 (2014) 075307

From the artificial atom to the Kondo-Anderson model: orientation dependent magneto-photoluminescence of charged excitons in InAs quantum dots

Authors: B. Van Hattem, P. Corfdir, P. Brereton, P. Pearce, A. M. Graham, M. J. Stanley, M. Hugues, M. Hopkinson, R. T. Phillips

Abstract: We present a magneto-photoluminescence study on neutral and charged excitons confined to InAs/GaAs quantum dots. Our investigation relies on a confocal microscope that allows arbitrary tuning of the angle between the applied magnetic field and the sample growth axis. First, from experiments on neutral excitons and trions, we extract the in-plane and on-axis components of the Landé tensor for elect… ▽ More We present a magneto-photoluminescence study on neutral and charged excitons confined to InAs/GaAs quantum dots. Our investigation relies on a confocal microscope that allows arbitrary tuning of the angle between the applied magnetic field and the sample growth axis. First, from experiments on neutral excitons and trions, we extract the in-plane and on-axis components of the Landé tensor for electrons and holes in the s-shell. Then, based on the doubly negatively charged exciton magneto-photoluminescence we show that the p-electron wave function spreads significantly into the GaAs barriers. We also demonstrate that the p-electron g-factor depends on the presence of a hole in the s-shell. The magnetic field dependence of triply negatively charged excitons photoluminescence exhibits several anticrossings, as a result of coupling between the quantum dot electronic states and the wetting layer. Finally, we discuss how the system evolves from a Kondo-Anderson exciton description to the artificial atom model when the orientation of the magnetic field goes from Faraday to Voigt geometry. △ Less

Submitted 24 May, 2013; v1 submitted 26 February, 2013; originally announced February 2013.

Journal ref: Phys. Rev. B 87, 205308 (2013)