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Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layered graphene and nickel/gold films
Authors:
R. Aristegui,
P. Lefebvre,
C. Brimont,
T. Guillet,
M. Vladimirova,
I. Paradisanos,
C. Robert,
X. Marie,
B. Urbaszek,
S. Chenot,
Y. Cordier,
B. Damilano
Abstract:
Excitons hosted by GaN/(Al,Ga)N quantum wells (QWs) are spatially indirect due to the giant built-in electric field that separates electrons and holes along the growth direction. This electric field, and thus exciton energy, can be reduced by depositing metallic layers on the sample surface. Using spatially-resolved micro-photoluminescence spectroscopy we compare the effects of two different mater…
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Excitons hosted by GaN/(Al,Ga)N quantum wells (QWs) are spatially indirect due to the giant built-in electric field that separates electrons and holes along the growth direction. This electric field, and thus exciton energy, can be reduced by depositing metallic layers on the sample surface. Using spatially-resolved micro-photoluminescence spectroscopy we compare the effects of two different materials, Nickel/Gold (NiAu) and few-layered graphene (FLG), on the potential landscape experienced by the excitons. We are able to (i) determine the potential barriers imposed on QW excitons by deposition of FLG and NiAu to be $14$ and $82$~meV, respectively, and (ii) to evidence their impact on the exciton transport at appropriate densities. Optical losses and inhomogeneous broadening induced by deposition of NiAu and FLG layers are similar, and their joined implementation constitute a promising tool for electrostatic modulation of IX densities even in the absence of any applied electric bias.
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Submitted 7 June, 2023;
originally announced June 2023.
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Atomic resolution interface structure and vertical current injection in highly uniform $MoS_{2}$ heterojunctions with bulk GaN
Authors:
F. Giannazzo,
S. E. Panasci,
E. Schilirò,
G. Greco,
F. Roccaforte,
G. Sfuncia,
G. Nicotra,
M. Cannas,
S. Agnello,
E. Frayssinet,
Y. Cordier,
A. Michon,
A. Koos,
B. Pécz
Abstract:
The integration of two-dimensional $MoS_{2}$ with $GaN$ recently attracted significant interest for future electronic/optoelectronic applications. However, the reported studies have been mainly carried out using heteroepitaxial $GaN$ templates on sapphire substrates, whereas the growth of $MoS_{2}$ on low-dislocation-density bulk GaN can be strategic for the realization of truly vertical devices.…
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The integration of two-dimensional $MoS_{2}$ with $GaN$ recently attracted significant interest for future electronic/optoelectronic applications. However, the reported studies have been mainly carried out using heteroepitaxial $GaN$ templates on sapphire substrates, whereas the growth of $MoS_{2}$ on low-dislocation-density bulk GaN can be strategic for the realization of truly vertical devices. In this paper, we report the growth of ultrathin $MoS_{2}$ films, mostly composed by single-layers ($1L$), onto homoepitaxial $n-GaN$ on $n^{+}$ bulk substrates by sulfurization of a pre-deposited $MoO_{x}$ film. Highly uniform and conformal coverage of the $GaN$ surface was demonstrated by atomic force microscopy, while very low tensile strain (0.05%) and a significant $p^{+}$-type do** ($4.5 \times 10^{12} cm^{-2}$) of $1L-MoS_{2}$ was evaluated by Raman map**. Atomic resolution structural and compositional analyses by aberration-corrected electron microscopy revealed a nearly-ideal van der Waals interface between $MoS_{2}$ and the $Ga$-terminated $GaN$ crystal, where only the topmost $Ga$ atoms are affected by oxidation. Furthermore, the relevant lattice parameters of the $MoS_{2}/GaN$ heterojunction, such as the van der Waals gap, were measured with high precision. Finally, the vertical current injection across this 2D/3D heterojunction has been investigated by nanoscale current-voltage analyses performed by conductive atomic force microscopy, showing a rectifying behavior with an average turn-on voltage $V_{on}=1.7 V$ under forward bias, consistent with the expected band alignment at the interface between $p^{+}$ doped $1L-MoS_{2}$ and $n-GaN$.
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Submitted 19 May, 2023; v1 submitted 24 April, 2023;
originally announced April 2023.
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Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates
Authors:
Giuseppe Greco,
Patrick Fiorenza,
Emanuela Schilirò,
Corrado Bongiorno,
Salvatore Di Franco,
Pierre-Marie Coulon,
Eric Frayssinet,
Florian Bartoli,
Filippo Giannazzo,
Daniel Alquier,
Yvon Cordier,
Fabrizio Roccaforte
Abstract:
In this paper, the Ni Schottky barrier on GaN epilayer grown on free standing substrates has been characterized. First, transmission electrical microscopy (TEM) images and nanoscale electrical analysis by conductive atomic force microscopy (C-AFM) of the bare material allowed visualizing structural defects in the crystal, as well as local inhomogeneities of the current conduction. The forward curr…
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In this paper, the Ni Schottky barrier on GaN epilayer grown on free standing substrates has been characterized. First, transmission electrical microscopy (TEM) images and nanoscale electrical analysis by conductive atomic force microscopy (C-AFM) of the bare material allowed visualizing structural defects in the crystal, as well as local inhomogeneities of the current conduction. The forward current-voltage (I-V) characteristics of Ni/GaN vertical Schottky diodes fabricated on the epilayer gave average values of the Schottky barrier height of 0.79 eV and ideality factor of 1.14. A statistical analysis over a set of diodes, combined with temperature dependence measurements, confirmed the formation of an inhomogeneous Schottky barrier in this material. From a plot of FB versus n, an ideal homogeneous barrier close to 0.9 eV was estimated, similar to that extrapolated by capacitance-voltage (C-V) analysis. Local I-V curves, acquired by means of C-AFM, displayed the inhomogeneous distribution of the onset of current conduction, which in turn resembles the one observed in the macroscopic Schottky diodes. Finally, the reverse characteristic of the diodes fabricated in the defects-free region have been acquired at different temperature and its behaviour has been described by the thermionic field emission (TFE) model.
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Submitted 23 April, 2023;
originally announced April 2023.
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A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells
Authors:
Patrick Quach,
Arnaud Jollivet,
Andrey Babichev,
Nathalie Isac,
Martina Morassi,
Aristide Lemaitre,
Pavel Yunin,
Eric Frayssinet,
Philippe de Mierry,
Mathieu Jeannin,
Adel Bousseksou,
Raffaele Colombelli,
Maria Tchernycheva,
Yvon Cordier,
François Julien
Abstract:
We report on a GaN/AlGaN quantum cascade detector operating in the terahertz spectral range. The device was grown by metal organic chemical vapor deposition on a c-sapphire substrate and relies on polar GaN/AlGaN step quantum wells. The active region thickness is in micrometer range. The structural, electrical and optical investigations attest of high structural quality of the synthetized nitride…
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We report on a GaN/AlGaN quantum cascade detector operating in the terahertz spectral range. The device was grown by metal organic chemical vapor deposition on a c-sapphire substrate and relies on polar GaN/AlGaN step quantum wells. The active region thickness is in micrometer range. The structural, electrical and optical investigations attest of high structural quality of the synthetized nitride material. The detector exhibits a peak photocurrent at 5.7 THz (23.6 meV) with a responsivity of 0.1 mA/W at 10 K under surface normal irradiation through a 10 um period grating. The photocurrent persists up to 20 K.
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Submitted 14 April, 2022;
originally announced April 2022.
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Electrical control of excitons in GaN/(Al,Ga)N quantum wells
Authors:
R. Aristegui,
F. Chiaruttini,
B. Jouault,
P. Lefebvre,
C. Brimont,
T. Guillet,
M. Vladimirova,
S. Chenot,
Y. Cordier,
B. Damilano
Abstract:
A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant densities of indirect excitons can accumulate in electrostatic traps imprinted in the quantum well plane by a thin metal layer deposited on top of the heterostructure. By jointly measuring spatially-resolved photolumines…
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A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant densities of indirect excitons can accumulate in electrostatic traps imprinted in the quantum well plane by a thin metal layer deposited on top of the heterostructure. By jointly measuring spatially-resolved photoluminescence and photo-induced current, we demonstrate that exciton density in the trap can be controlled via an external electric bias, which is capable of altering the trap depth. Application of a negative bias deepens the trap** potential, but does not lead to any additional accumulation of excitons in the trap. This is due to exciton dissociation instigated by the lateral electric field at the electrode edges. The resulting carrier losses are detected as an increased photo-current and reduced photoluminescence intensity. By contrast, application of a positive bias washes out the electrode-induced trap** potential. Thus, excitons get released from the trap and recover free propagation in the plane that we reveal by spatially-resolved photoluminescence.
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Submitted 25 March, 2022;
originally announced March 2022.
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Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition
Authors:
F. Giannazzo,
R. Dagher,
E. Schilirò,
S. E. Panasci,
G. Greco,
G. Nicotra,
F. Roccaforte,
S. Agnello,
J. Brault,
Y. Cordier,
A. Michon
Abstract:
The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we demonstrated the direct growth of Gr on Al0.5Ga0.5N/sapphire templates by propane (C3H8) chemical vapor deposition (CVD) at temperature of 1350°C. After optimization of the C3H8 flow rate, a uniform and conformal Gr cover…
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The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we demonstrated the direct growth of Gr on Al0.5Ga0.5N/sapphire templates by propane (C3H8) chemical vapor deposition (CVD) at temperature of 1350°C. After optimization of the C3H8 flow rate, a uniform and conformal Gr coverage was achieved, which proved beneficial to prevent degradation of AlGaN morphology. X-ray photoemission spectroscopy (XPS) revealed Ga loss and partial oxidation of Al in the near-surface AlGaN region. Such chemical modification of a 2 nm thick AlGaN surface region was confirmed by cross-sectional scanning transmission electron microscopy (STEM) combined with electron energy loss spectroscopy (EELS), which also showed the presence of a bilayer of Gr with partial sp2/sp3 hybridization. Raman spectra indicated that the deposited Gr is nanocrystalline (with domain size 7 nm) and compressively strained. A Gr sheet resistance of 15.8 kOhm/sq was evaluated by four-point-probe measurements, consistently with the nanocrystalline nature of these films. Furthermore, nanoscale resolution current map** by conductive atomic force microscopy (C-AFM) indicated local variations of the Gr carrier density at a mesoscopic scale, which can be ascribed to changes in the charge transfer from the substrate due to local oxidation of AlGaN or to the presence of Gr wrinkles.
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Submitted 18 September, 2020;
originally announced September 2020.
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Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics
Authors:
F. Chiaruttini,
T. Guillet,
C. Brimont,
B. Jouault,
P. Lefebvre,
S. Chenot,
Y. Cordier,
B. Damilano,
M. Vladimirova
Abstract:
Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of dipolar excitons. We demonstrate the in-plane confinement and cooling of these excitons, when trapped in the electrostatic potential created by semitransparent electrodes of various shapes deposited on the…
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Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of dipolar excitons. We demonstrate the in-plane confinement and cooling of these excitons, when trapped in the electrostatic potential created by semitransparent electrodes of various shapes deposited on the sample surface. This result is a prerequisite for the electrical control of the exciton densities and fluxes, as well for studies of the complex phase diagram of these dipolar bosons at low temperature.
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Submitted 8 February, 2019;
originally announced February 2019.
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Highly resistive epitaxial Mg-doped GdN thin films
Authors:
C. -M. Lee,
H. Warring,
S. Vézian,
B. Damilano,
S. Granville,
M. Al Khalfioui,
Y. Cordier,
H. J. Trodahl,
B. J. Ruck,
F. Natali
Abstract:
We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional do** with magnesium. Mg-doped GdN layers with resistivities of 1000 Ω.cm and carrier concentrations of 10E16 cm-3 are obtained for films with Mg concentrations up to 5 x 10E19 atoms/cm3. X-ray diffraction rocking curves indicate that Mg-doped GdN films have crystalline quality very similar to undoped GdN fi…
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We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional do** with magnesium. Mg-doped GdN layers with resistivities of 1000 Ω.cm and carrier concentrations of 10E16 cm-3 are obtained for films with Mg concentrations up to 5 x 10E19 atoms/cm3. X-ray diffraction rocking curves indicate that Mg-doped GdN films have crystalline quality very similar to undoped GdN films, showing that the Mg do** did not affect the structural properties of the films. A decrease of the Curie temperature with decreasing the electron density is observed, supporting a recently suggested magnetic polaron scenario [F. Natali et al., Phys. Rev. B 87, 035202 (2013)].
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Submitted 29 October, 2014;
originally announced October 2014.
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Tuning the electromagnetic local density of states in graphene-covered systems via strong coupling with graphene plasmons
Authors:
Riccardo Messina,
Jean-Paul Hugonin,
Jean-Jacques Greffet,
François Marquier,
Yannick De Wilde,
Ali Belarouci,
Luc Frechette,
Yvon Cordier,
Philippe Ben-Abdallah
Abstract:
It is known that the near-field spectrum of the local density of states of the electromagnetic field above a SiC/air interface displays an intense narrow peak due to the presence of a surface polariton. It has been recently shown that this surface wave can be strongly coupled with the sheet plasmon of graphene in graphene-SiC heterosystems. Here, we explore the interplay between these two phenomen…
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It is known that the near-field spectrum of the local density of states of the electromagnetic field above a SiC/air interface displays an intense narrow peak due to the presence of a surface polariton. It has been recently shown that this surface wave can be strongly coupled with the sheet plasmon of graphene in graphene-SiC heterosystems. Here, we explore the interplay between these two phenomena and demonstrate that the spectrum of the electromagnetic local density of states in these systems presents two peaks whose position depends dramatically both on the distance to the interface and on the chemical potential of graphene. This paves the way towards the active control of the local density of states.
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Submitted 15 February, 2013; v1 submitted 13 November, 2012;
originally announced November 2012.
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The role of magnetic polarons in ferromagnetic GdN
Authors:
Franck Natali,
Ben Ruck,
Joe Trodahl,
Do Le Binh,
Stephane Vezian,
Benjamin Damilano,
Yvon Cordier,
Fabrice Semond,
Claire Meyer
Abstract:
We report an interplay between magnetism and charge transport in the ferromagnetic semiconductor GdN, pointing to the formation of magnetic polarons centred on nitrogen vacancies. The scenario goes some way to resolving a long-standing disagreement between the measured and predicted Curie temperature in GdN. It further constitutes an extension of concepts that relate closely to the behaviour of fe…
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We report an interplay between magnetism and charge transport in the ferromagnetic semiconductor GdN, pointing to the formation of magnetic polarons centred on nitrogen vacancies. The scenario goes some way to resolving a long-standing disagreement between the measured and predicted Curie temperature in GdN. It further constitutes an extension of concepts that relate closely to the behaviour of ferromagnetic semiconductors generally, and EuO in particular.
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Submitted 12 October, 2012;
originally announced October 2012.
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Voltage controlled terahertz transmission through GaN quantum wells
Authors:
T. Laurent,
R. Sharma,
J. Torres,
P. Nouvel,
S. Blin,
L. Varani,
Y. Cordier,
M. Chmielowska,
S. Chenot,
JP Faurie,
B. Beaumont,
P. Shiktorov,
E. Starikov,
V. Gruzinskis,
V. Korotyevyev,
V. Kochelap
Abstract:
We report measurements of radiation transmission in the 0.220--0.325 THz frequency domain through GaN quantum wells grown on sapphire substrates at room and low temperatures. A significant enhancement of the transmitted beam intensity with the applied voltage on the devices under test is found. For a deeper understanding of the physical phenomena involved, these results are compared with a phenome…
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We report measurements of radiation transmission in the 0.220--0.325 THz frequency domain through GaN quantum wells grown on sapphire substrates at room and low temperatures. A significant enhancement of the transmitted beam intensity with the applied voltage on the devices under test is found. For a deeper understanding of the physical phenomena involved, these results are compared with a phenomenological theory of light transmission under electric bias relating the transmission enhancement to changes in the differential mobility of the two-dimensional electron gas.
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Submitted 16 May, 2011;
originally announced May 2011.
