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Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures
Authors:
Babak Fallahazad,
Kayoung Lee,
Sangwoo Kang,
Jiamin Xue,
Stefano Larentis,
Christopher Corbet,
Kyounghwan Kim,
Hema C. P. Movva,
Takashi Taniguchi,
Kenji Watanabe,
Leonard F. Register,
Sanjay K. Banerjee,
Emanuel Tutuc
Abstract:
We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron-nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials…
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We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron-nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials indicates that the resonance occurs when the energy bands of the two bilayer graphene are aligned. We discuss the tunneling resistance dependence on the interlayer hBN thickness, as well as the resonance width dependence on mobility and rotational alignment.
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Submitted 9 December, 2014;
originally announced December 2014.
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Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions
Authors:
Hema C. P. Movva,
Michael E. Ramón,
Chris M. Corbet,
Sushant Sonde,
Sk. Fahad Chowdhury,
Gary Carpenter,
Emanuel Tutuc,
Sanjay K. Banerjee
Abstract:
We report a method of fabricating self-aligned, top-gated graphene field-effect transistors (GFETs) employing polyethyleneimine spin-on-doped source/drain access regions, resulting in a 2X reduction of access resistance and a 2.5X improvement in device electrical characteristics, over undoped devices. The GFETs on Si/SiO$_2$ substrates have high carrier mobilities of up to 6,300 cm$^2$/Vs. Self-al…
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We report a method of fabricating self-aligned, top-gated graphene field-effect transistors (GFETs) employing polyethyleneimine spin-on-doped source/drain access regions, resulting in a 2X reduction of access resistance and a 2.5X improvement in device electrical characteristics, over undoped devices. The GFETs on Si/SiO$_2$ substrates have high carrier mobilities of up to 6,300 cm$^2$/Vs. Self-aligned spin-on-do** is applicable to GFETs on arbitrary substrates, as demonstrated by a 3X enhancement in performance for GFETs on insulating quartz substrates, which are better suited for radio frequency applications.
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Submitted 6 November, 2012; v1 submitted 19 October, 2012;
originally announced October 2012.
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Raman spectroscopy and strain map** in individual Ge-SixGe1-x core-shell nanowires
Authors:
D. C. Dillen,
K. M. Varahramyan,
C. M. Corbet,
E. Tutuc
Abstract:
Core-shell Ge-SixGe1-x nanowires (NWs) are expected to contain large strain fields due to the lattice-mismatch at the core/shell interface. Here we report the measurement of core strain in a NW heterostructure using Raman spectroscopy. We compare the Raman spectra, and the frequency of the Ge-Ge mode measured in individual Ge-Si0.5Ge0.5 core-shell, and bare Ge NWs. We find that the Ge-Ge mode freq…
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Core-shell Ge-SixGe1-x nanowires (NWs) are expected to contain large strain fields due to the lattice-mismatch at the core/shell interface. Here we report the measurement of core strain in a NW heterostructure using Raman spectroscopy. We compare the Raman spectra, and the frequency of the Ge-Ge mode measured in individual Ge-Si0.5Ge0.5 core-shell, and bare Ge NWs. We find that the Ge-Ge mode frequency is diameter-independent in GeNWs with a value similar to that of bulk Ge, 300.5 cm-1. On the other hand, Ge-Si0.5Ge0.5 core-shell nanowires reveal a strain-induced blue shift of the Ge-Ge mode, dependent on the relative core and shell thicknesses. Using lattice dynamical theory we determine the strain in the Ge core, and show that the results are in good agreement with values calculated using a continuum elasticity model.
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Submitted 3 July, 2012;
originally announced July 2012.
