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Pathway to the PiezoElectronic Transduction Logic Device
Authors:
P. M. Solomon,
B. A. Bryce,
M. A. Kuroda,
R. Keech,
S. Shett,
T. M. Shaw,
M. Copel,
L. -W. Hung,
A. G. Schrott,
C. Armstrong,
M. S. Gordon,
K. B. Reuter,
T. N. Theis,
W. Haensch,
S. M. Rossnagel,
H. Miyazoe,
B. G. Elmegreen,
X. -H. Liu,
S. Trolier-McKinstry,
G. J Martyna,
D. M. Newns
Abstract:
The information age challenges computer technology to process an exponentially increasing computational load on a limited energy budget - a requirement that demands an exponential reduction in energy per operation. In digital logic circuits, the switching energy of present FET devices is intimately connected with the switching voltage, and can no longer be lowered sufficiently, limiting the abilit…
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The information age challenges computer technology to process an exponentially increasing computational load on a limited energy budget - a requirement that demands an exponential reduction in energy per operation. In digital logic circuits, the switching energy of present FET devices is intimately connected with the switching voltage, and can no longer be lowered sufficiently, limiting the ability of current technology to address the challenge. Quantum computing offers a leap forward in capability, but a clear advantage requires algorithms presently developed for only a small set of applications. Therefore, a new, general purpose, classical technology based on a different paradigm is needed to meet the ever increasing demand for data processing.
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Submitted 25 March, 2015;
originally announced March 2015.
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Determination of the graphene growth mode on SiC(0001) and SiC(000-1)
Authors:
J. B. Hannon,
M. Copel,
R. M. Tromp
Abstract:
We have determined the growth mode of graphene on SiC(0001) and SiC(000-1) using ultra-thin, isotopically-labeled Si13C `marker layers' grown epitaxially on the Si12C surfaces. Few-layer graphene overlayers were formed via thermal decomposition at elevated temperature. For both surface terminations (Si-face and C-face), we find that the 13C is located mainly in the outermost graphene layers, indic…
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We have determined the growth mode of graphene on SiC(0001) and SiC(000-1) using ultra-thin, isotopically-labeled Si13C `marker layers' grown epitaxially on the Si12C surfaces. Few-layer graphene overlayers were formed via thermal decomposition at elevated temperature. For both surface terminations (Si-face and C-face), we find that the 13C is located mainly in the outermost graphene layers, indicating that, during decomposition, new graphene layers form underneath existing ones.
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Submitted 12 August, 2011;
originally announced August 2011.
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Medium Energy Ion Scattering of Gr on SiC(0001) and Si(100)
Authors:
M. Copel,
S. Oida,
A. Kasry,
A. A. Bol,
J. B. Hannon,
R. M. Tromp
Abstract:
Depth profiling of graphene with high-resolution ion beam analysis is a practical method for analysis of monolayer thicknesses of graphene. Not only is the energy resolution sufficient to resolve graphene from underlying SiC, but by use of isotope labeling it is possible to tag graphene generated from reacted ethylene. Furthermore, we are able to analyze graphene supported by oxidized Si(100) subs…
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Depth profiling of graphene with high-resolution ion beam analysis is a practical method for analysis of monolayer thicknesses of graphene. Not only is the energy resolution sufficient to resolve graphene from underlying SiC, but by use of isotope labeling it is possible to tag graphene generated from reacted ethylene. Furthermore, we are able to analyze graphene supported by oxidized Si(100) substrates, allowing the study of graphene films grown by chemical vapor deposition on metal and transfered to silicon. This introduces a powerful method to explore the fundamentals of graphene formation.
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Submitted 3 February, 2011;
originally announced February 2011.
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Decoupling Graphene from SiC(0001) via Oxidation
Authors:
S. Oida,
F. R. McFeely,
J. B. Hannon,
R. M. Tromp,
M. Copel,
Z. Chen,
Y. Sun,
D. B. Farmer,
J. Yurkas
Abstract:
When epitaxial graphene layers are formed on SiC(0001), the first carbon layer (known as the "buffer layer"), while relatively easy to synthesize, does not have the desirable electrical properties of graphene. The conductivity is poor due to a disruption of the graphene pi-bands by covalent bonding to the SiC substrate. Here we show that it is possible to restore the graphene pi-bands by inserting…
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When epitaxial graphene layers are formed on SiC(0001), the first carbon layer (known as the "buffer layer"), while relatively easy to synthesize, does not have the desirable electrical properties of graphene. The conductivity is poor due to a disruption of the graphene pi-bands by covalent bonding to the SiC substrate. Here we show that it is possible to restore the graphene pi-bands by inserting a thin oxide layer between the buffer layer and SiC substrate using a low temperature, CMOS-compatible process that does not damage the graphene layer.
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Submitted 29 March, 2010;
originally announced March 2010.
