Showing 1–18 of 18 results for author: Contarato, D

Studies of Vertex Tracking with SOI Pixel Sensors for Future Lepton Colliders

Authors: Marco Battaglia, Devis Contarato, Peter Denes, Dietrich Liko, Serena Mattiazzo, Devis Pantano

Abstract: This paper presents a study of vertex tracking with a beam hodoscope consisting of three layers of monolithic pixel sensors in SOI technology on high-resistivity substrate. We study the track extrapolation accuracy, two-track separation and vertex reconstruction accuracy in pion-Cu interactions with 150 and 300 GeV/c pions at the CERN SPS. Results are discussed in the context of vertex tracking at… ▽ More This paper presents a study of vertex tracking with a beam hodoscope consisting of three layers of monolithic pixel sensors in SOI technology on high-resistivity substrate. We study the track extrapolation accuracy, two-track separation and vertex reconstruction accuracy in pion-Cu interactions with 150 and 300 GeV/c pions at the CERN SPS. Results are discussed in the context of vertex tracking at future lepton colliders. △ Less

Submitted 13 April, 2012; originally announced April 2012.

Comments: 15 pages, 8 figures, submitted to Nuclear Instruments and Methods A

Characterisation of a Thin Fully Depleted SOI Pixel Sensor with High Momentum Charged Particles

Authors: Marco Battaglia, Dario Bisello, Devis Contarato, Peter Denes, Piero Giubilato, Serena Mattiazzo, Devis Pantano

Abstract: This paper presents the results of the characterisation of a thin, fully depleted pixel sensor manufactured in SOI technology on high-resistivity substrate with high momentum charged particles. The sensor is thinned to 70 $μ$m and a thin phosphor layer contact is implanted on the back-plane. Its response is compared to that of thick sensors of same design in terms of signal and noise, detection ef… ▽ More This paper presents the results of the characterisation of a thin, fully depleted pixel sensor manufactured in SOI technology on high-resistivity substrate with high momentum charged particles. The sensor is thinned to 70 $μ$m and a thin phosphor layer contact is implanted on the back-plane. Its response is compared to that of thick sensors of same design in terms of signal and noise, detection efficiency and single point resolution based on data collected with 300 GeV pions at the CERN SPS. We observe that the charge collected and the signal-to-noise ratio scale according to the estimated thickness of the sensitive volume and the efficiency and single point resolution of the thinned chip are comparable to those measured for the thick sensors. △ Less

Submitted 6 February, 2012; originally announced February 2012.

Comments: 8 pages, 3 figures, submitted to Nucl. Instr. and Meth., section A

Characterisation of a Thin Fully-Depleted SOI Pixel Sensor with Soft X-ray Radiation

Authors: Marco Battaglia, Dario Bisello, Richard Celestre, Devis Contarato, Peter Denes, Serena Mattiazzo, Craig Tindall

Abstract: This paper presents the results of the characterisation of a back-illuminated pixel sensor manufactured in Silicon-On-Insulator technology on a high-resistivity substrate with soft X-rays. The sensor is thinned and a thin Phosphor layer contact is implanted on the back-plane. The response to X-rays from 2.12 up to 8.6 keV is evaluated with fluorescence radiation at the LBNL Advanced Light Source. This paper presents the results of the characterisation of a back-illuminated pixel sensor manufactured in Silicon-On-Insulator technology on a high-resistivity substrate with soft X-rays. The sensor is thinned and a thin Phosphor layer contact is implanted on the back-plane. The response to X-rays from 2.12 up to 8.6 keV is evaluated with fluorescence radiation at the LBNL Advanced Light Source. △ Less

Submitted 9 November, 2011; originally announced November 2011.

Comments: 9 pages, 5 figures, submitted to Nuclear Instruments and Methods A

Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking

Authors: Marco Battaglia, Dario Bisello, Devis Contarato, Peter Denes, Piero Giubilato, Serena Mattiazzo, Devis Pantano, Sarah Zalusky

Abstract: This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 GeV pions. We report results on charge collection, particle detection efficiency and single poi… ▽ More This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 GeV pions. We report results on charge collection, particle detection efficiency and single point resolution. △ Less

Submitted 4 March, 2011; originally announced March 2011.

Comments: 15 pages, 11 figures, submitted to Nuclear Instruments and Methods A

Journal ref: Nuclear Inst. and Methods in Physics Research, A 650 (2011), pp. 55-58

Characterisation of a CMOS Active Pixel Sensor for use in the TEAM Microscope

Authors: Marco Battaglia, Devis Contarato, Peter Denes, Dionisio Doering, Thomas Duden, Brad Krieger, Piero Giubilato, Dario Gnani, Velimir Radmilovic

Abstract: A 1M- and a 4M-pixel monolithic CMOS active pixel sensor with 9.5x9.5 micron^2 pixels have been developed for direct imaging in transmission electron microscopy as part of the TEAM project. We present the design and a full characterisation of the detector. Data collected with electron beams at various energies of interest in electron microscopy are used to determine the detector response. Data are… ▽ More A 1M- and a 4M-pixel monolithic CMOS active pixel sensor with 9.5x9.5 micron^2 pixels have been developed for direct imaging in transmission electron microscopy as part of the TEAM project. We present the design and a full characterisation of the detector. Data collected with electron beams at various energies of interest in electron microscopy are used to determine the detector response. Data are compared to predictions of simulation. The line spread function measured with 80 keV and 300 keV electrons is (12.1+/-0.7) micron and (7.4+/-0.6) micron, respectively, in good agreement with our simulation. We measure the detection quantum efficiency to be 0.78+/-0.04 at 80 keV and 0.74+/-0.03 at 300 keV. Using a new imaging technique, based on single electron reconstruction, the line spread function for 80 keV and 300 keV electrons becomes (6.7+/-0.3) micron and (2.4+/-0.2) micron, respectively. The radiation tolerance of the pixels has been tested up to 5 Mrad and the detector is still functional with a decrease of dynamic range by ~30%, corresponding to a reduction in full-well depth from ~39 to ~27 primary 300 keV electrons, due to leakage current increase, but identical line spread function performance. △ Less

Submitted 13 June, 2010; originally announced June 2010.

Comments: 19 pages, 14 figures, submitted to Nuclear Instruments and Methods A

Journal ref: Nucl.Instrum.Meth.A622:669-677,2010

Cluster Imaging with a Direct Detection CMOS Pixel Sensor in Transmission Electron Microscopy

Authors: Marco Battaglia, Devis Contarato, Peter Denes, Piero Giubilato

Abstract: A cluster imaging technique for Transmission Electron Microscopy with a direct detection CMOS pixel sensor is presented. Charge centre-of-gravity reconstruction for individual electron clusters improves the spatial resolution and thus the point spread function. Data collected with a CMOS sensor with 9.5 micron pixels show an improvement of a factor of two in point spread function to 2.7 micron a… ▽ More A cluster imaging technique for Transmission Electron Microscopy with a direct detection CMOS pixel sensor is presented. Charge centre-of-gravity reconstruction for individual electron clusters improves the spatial resolution and thus the point spread function. Data collected with a CMOS sensor with 9.5 micron pixels show an improvement of a factor of two in point spread function to 2.7 micron at 300 keV and of a factor of three in the image contrast, compared to traditional bright field illumination. △ Less

Submitted 22 July, 2009; originally announced July 2009.

Comments: 6 pages, 3 figures, submitted to Nucl. Instr. Meth. A

Journal ref: Nucl.Instrum.Meth.A608:363-365,2009

CMOS Pixel Sensor Response to Low Energy Electrons in Transmission Electron Microscopy

Authors: Marco Battaglia, Devis Contarato, Peter Denes, Dionisio Doering, Velimir Radmilovic

Abstract: This paper presents the results of a study of the response of a test CMOS sensor with a radiation tolerant pixel cell design to 80 keV and 100 keV electrons. The point spread function is measured to be (13.0+/- 1.7) microns at 100 keV and (12.1 +/- 1.6) microns at 80 keV, for 20 micron pixels. Results agree well with values predicted by a Geant-4 and dedicated charge collection simulation. This paper presents the results of a study of the response of a test CMOS sensor with a radiation tolerant pixel cell design to 80 keV and 100 keV electrons. The point spread function is measured to be (13.0+/- 1.7) microns at 100 keV and (12.1 +/- 1.6) microns at 80 keV, for 20 micron pixels. Results agree well with values predicted by a Geant-4 and dedicated charge collection simulation. △ Less

Submitted 3 April, 2009; originally announced April 2009.

Comments: 5 pages, 2 figures, submitted to Nucl. Instr. and Meth. A

Journal ref: Nucl.Instrum.Meth.A605:350-352,2009

Monolithic Pixel Sensors in Deep-Submicron SOI Technology

Authors: Marco Battaglia, Dario Bisello, Devis Contarato, Peter Denes, Piero Giubilato, Lindsay Glesener, Serena Mattiazzo, Chinh Qu Vu

Abstract: Monolithic pixel sensors for charged particle detection and imaging applications have been designed and fabricated using commercially available, deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin layer of integrated full CMOS electronics from a high-resistivity substrate by means of a buried oxide. The substrate is contacted from the electronics layer through vias etched… ▽ More Monolithic pixel sensors for charged particle detection and imaging applications have been designed and fabricated using commercially available, deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin layer of integrated full CMOS electronics from a high-resistivity substrate by means of a buried oxide. The substrate is contacted from the electronics layer through vias etched in the buried oxide, allowing pixel implanting and reverse biasing. This paper summarizes the performances achieved with a first prototype manufactured in the OKI 0.15 micrometer FD-SOI process, featuring analog and digital pixels on a 10 micrometer pitch. The design and preliminary results on the analog section of a second prototype manufactured in the OKI 0.20 micrometer FD-SOI process are briefly discussed. △ Less

Submitted 18 March, 2009; originally announced March 2009.

Comments: Proceedings of the PIXEL 2008 International Workshop, FNAL, Batavia, IL, 23-26 September 2008. Submitted to JINST - Journal of Instrumentation

Journal ref: JINST 4:P04007,2009

Monolithic Pixel Sensors in Deep-Submicron SOI Technology with Analog and Digital Pixels

Authors: Marco Battaglia, Dario Bisello, Devis Contarato, Peter Denes, Piero Giubilato, Lindsay Glesener, Serena Mattiazzo, Chinh Vu

Abstract: This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics is insulated from a (high-resistivity) silicon substrate by a buried oxide. Vias etched through the oxide allow to contact the substrate from the electronics l… ▽ More This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics is insulated from a (high-resistivity) silicon substrate by a buried oxide. Vias etched through the oxide allow to contact the substrate from the electronics layer, so that pixel implants can be created and a reverse bias can be applied. The prototype chip, manufactured in OKI 0.15 micron SOI process, features both analog and digital pixels on a 10 micron pitch. Results of tests performed with infrared laser and 1.35 GeV electrons and a first assessment of the effect of ionising and non-ionising doses are discussed. △ Less

Submitted 27 November, 2008; originally announced November 2008.

Comments: 5 pages, 7 figures, submitted to Nuclear Instruments and Methods A

Journal ref: Nucl.Instrum.Meth.A604:380-384,2009

A Rad-hard CMOS Active Pixel Sensor for Electron Microscopy

Authors: Marco Battaglia, Devis Contarato, Peter Denes, Dionisio Doering, Piero Giubilato, Tae Sung Kim, Serena Mattiazzo, Velimir Radmilovic, Sarah Zalusky

Abstract: Monolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure able to withstand doses in excess of 1 MRad. Data collected with electron beams at various energies of interest in electron microscopy are compared to predictio… ▽ More Monolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure able to withstand doses in excess of 1 MRad. Data collected with electron beams at various energies of interest in electron microscopy are compared to predictions of simulation and to 1.5 GeV electron data to disentagle the effect of multiple scattering. The point spread function measured with 300 keV electrons is (8.1 +/- 1.6) micron for 10 micron pixel and (10.9 +/- 2.3) micron for 20 micron pixels, respectively, which agrees well with the values of 8.4 micron and 10.5 micron predicted by our simulation. △ Less

Submitted 17 November, 2008; originally announced November 2008.

Comments: 16 pages, 9 figures, submitted to Nucl. Instr and Meth A

Journal ref: Nucl.Instrum.Meth.A598:642-649,2009

Development of CMOS monolithic pixel sensors with in-pixel correlated double sampling and fast readout

Authors: Marco Battaglia, Jean-Marie Bussat, Devis Contarato, Peter Denes, Piero Giubilato, Lindsay E. Glesener

Abstract: This paper presents the design and results of detailed tests of a CMOS active pixel chip for charged particle detection with in-pixel charge storage for correlated double sampling and readout in rolling shutter mode at frequencies up to 25 MHz. This detector is developed in the framework of R&D for the Vertex Tracker for a future e+e- Linear Collider. This paper presents the design and results of detailed tests of a CMOS active pixel chip for charged particle detection with in-pixel charge storage for correlated double sampling and readout in rolling shutter mode at frequencies up to 25 MHz. This detector is developed in the framework of R&D for the Vertex Tracker for a future e+e- Linear Collider. △ Less

Submitted 12 November, 2008; originally announced November 2008.

Comments: 5 pages, 6 figures, submitted to IEEE Trans. Nucl. Sci

Journal ref: IEEE Trans.Nucl.Sci.55:3746-3750,2008

A Sensor with Analog and Digital Pixels in 0.15 micron SOI Technology

Authors: Marco Battaglia, Dario Bisello, Devis Contarato, Peter Denes, Piero Giubilato, Lindsay E. Glesener, Serena Mattiazzo, Chinh Vu

Abstract: A monolithic pixel sensor in deep-submicron Silicon-On-Insulator (SOI) CMOS technology has been designed, manufactured and characterised. This technology is of significant interest for applications in particle tracking and imaging. The prototype chip features pixels of 10 micron pitch arrayed in two analog sections and one digital section with a comparator and a latch integrated in each pixel. T… ▽ More A monolithic pixel sensor in deep-submicron Silicon-On-Insulator (SOI) CMOS technology has been designed, manufactured and characterised. This technology is of significant interest for applications in particle tracking and imaging. The prototype chip features pixels of 10 micron pitch arrayed in two analog sections and one digital section with a comparator and a latch integrated in each pixel. The prototype response has been tested with infrared lasers and with the 1.35 GeV electron beam extracted from the injection booster at the LBNL Advanced Light Source. Results from irradiation tests with low energy protons and neutrons performed at the LBNL 88-inch Cyclotron are also presented. △ Less

Submitted 30 June, 2008; originally announced July 2008.

Comments: 5 pages, 11 figures, contributed to the SORMA 08 Conference, to appear on IEEE Transactions on Nuclear Physics

Tracking and Vertexing with a Thin CMOS Pixel Beam Telescope

Authors: Marco Battaglia, Dario Bisello, Gino Bolla, Daniela Bortoletto, Devis Contarato, Silvia Franchino, Piero Giubilato, Lindsay Glesener, Benjamin Hooberman, Devis Pantano

Abstract: We present results of a study of charged particle track and vertex reconstruction with a beam telescope made of four layers of 50 micron-thin CMOS monolithic pixel sensors using the 120 GeV protons at the FNAL Meson Test Beam Facility. We compare our results to the performance requirements of a future e+e- linear collider in terms of particle track extrapolation and vertex reconstruction accurac… ▽ More We present results of a study of charged particle track and vertex reconstruction with a beam telescope made of four layers of 50 micron-thin CMOS monolithic pixel sensors using the 120 GeV protons at the FNAL Meson Test Beam Facility. We compare our results to the performance requirements of a future e+e- linear collider in terms of particle track extrapolation and vertex reconstruction accuracies. △ Less

Submitted 10 May, 2008; originally announced May 2008.

Comments: 9 pages, 7 figures submitted to Nuclear Instruments and Methods A

Journal ref: Nucl.Instrum.Meth.A593:292-297,2008

Development of CMOS monolithic pixel sensors with in-pixel correlated double sampling and fast readout for the ILC

Authors: Marco Battaglia, Jean-Marie Bussat, Devis Contarato, Peter Denes, Piero Giubilato, Lindsay E. Glesener

Abstract: This paper presents the design and results of detailed tests of a CMOS active pixel chip for charged particle detection with in-pixel charge storage for correlated double sampling and readout in rolling shutter mode at frequencies up to 25 MHz. This detector is developed in the framework of R&D for the Vertex Tracker for the International Linear Collider. This paper presents the design and results of detailed tests of a CMOS active pixel chip for charged particle detection with in-pixel charge storage for correlated double sampling and readout in rolling shutter mode at frequencies up to 25 MHz. This detector is developed in the framework of R&D for the Vertex Tracker for the International Linear Collider. △ Less

Submitted 17 December, 2007; originally announced December 2007.

Comments: 3 pages, 4 figures, to appear on the Conference Record of the 2007 IEEE Nuclear Science Symposium, Honolulu, HI, October 2007

Monolithic Pixels R&D at LBNL

Authors: Devis Contarato, Marco Battaglia, Jean-Marie Bussat, Peter Denes, Piero Giubilato, Lindsay Glesener, Benjamin Hooberman, Chinh Qu Vu

Abstract: This paper reports recent results from the ongoing R&D on monolithic pixels for the ILC Vertex Tracker at LBNL. This paper reports recent results from the ongoing R&D on monolithic pixels for the ILC Vertex Tracker at LBNL. △ Less

Submitted 1 October, 2007; originally announced October 2007.

Comments: To appear in the Proceedings of the LCWS International Linear Collider Workshop 2007, Hamburg, Germany

Journal ref: ECONF C0705302:TRK12,2007

Particle Tracking with a Thin Pixel Telescope

Authors: Marco Battaglia, Devis Contarato, Piero Giubilato, Lindsay Glesener, Leo Greiner, Benjamin Hooberman

Abstract: We report results on a tracking performance study performed using a beam telescope made of 50 micron-thick CMOS pixel sensors on the 1.5 GeV electron beam at the LBNL ALS. We report results on a tracking performance study performed using a beam telescope made of 50 micron-thick CMOS pixel sensors on the 1.5 GeV electron beam at the LBNL ALS. △ Less

Submitted 28 September, 2007; originally announced October 2007.

Comments: 4 pages, 2 figures, to appear in the Proceedings of the 2007 International Linear Collider Workshop, LCWS07, DESY, Hamburg, May-June 2007

Journal ref: ECONF C0705302:TRK13,2007

A Monolithic Pixel Sensor in 0.15 micron Fully Depleted SOI Technology

Authors: Marco Battaglia, Dario Bisello, Devis Contarato, Peter Denes, Piero Giubilato, Lindsay Glesener, Chinh Vu

Abstract: This letter presents the design of a monolithic pixel sensor with 10x10 micron^2 pixels in OKI 0.15 micron fully depleted SOI technology and first results of its characterisation. The response of the chip to charged particles has been studied on the 1.35 GeV electron beam at the LBNL ALS. This letter presents the design of a monolithic pixel sensor with 10x10 micron^2 pixels in OKI 0.15 micron fully depleted SOI technology and first results of its characterisation. The response of the chip to charged particles has been studied on the 1.35 GeV electron beam at the LBNL ALS. △ Less

Submitted 26 September, 2007; originally announced September 2007.

Comments: 4 pages, 5 figures, submitted to Nuclear Instruments and Methods A

Journal ref: Nucl.Instrum.Meth.A583:526-528,2007

A Study of Monolithic CMOS Pixel Sensors Back-thinning and their Application for a Pixel Beam Telescope

Authors: Marco Battaglia, Devis Contarato, Piero Giubilato, Leo Greiner, Lindsay Glesener, Benjamin Hooberman

Abstract: This paper reports results on a detailed study of charge collection and signal-to-noise performance of CMOS monolithic pixel sensors before and after back-thinning and their application in a pixel beam telescope for the ALS 1.5 GeV $e^-$ beam test facility. This paper reports results on a detailed study of charge collection and signal-to-noise performance of CMOS monolithic pixel sensors before and after back-thinning and their application in a pixel beam telescope for the ALS 1.5 GeV $e^-$ beam test facility. △ Less

Submitted 8 November, 2006; originally announced November 2006.

Comments: 6 pages, one figure, to appear on the proceedings of the the Sixth International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Carmel, CA, September, 2006

Journal ref: Nucl.Instrum.Meth.A579:675-679,2007