Showing 1–19 of 19 results for author: Constantinou, P

Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO2 interface

Authors: Megan Cowie, Procopios C. Constantinou, Neil J. Curson, Taylor J. Z. Stock, Peter Grutter

Abstract: We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO$_2$ interface. Our measurements demonstrate that two-state fluctuations are localized at interfacial traps, with bias-dependent rates and amplitudes. These two-level systems lead to correlated carrier number and mobility fluctuations with a range of characteristic timescales; taken together as an ensemb… ▽ More We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO$_2$ interface. Our measurements demonstrate that two-state fluctuations are localized at interfacial traps, with bias-dependent rates and amplitudes. These two-level systems lead to correlated carrier number and mobility fluctuations with a range of characteristic timescales; taken together as an ensemble, they give rise to a $1/f$ power spectral trend. Such individual defect fluctuations at the Si/SiO$_2$ interface impair the performance and reliability of nanoscale semiconductor devices, and will be a significant source of noise in semiconductor-based quantum sensors and computers. The fluctuations measured here are associated with a four-fold competition of rates, including slow two-state switching on the order of seconds and, in one state, fast switching on the order of nanoseconds which is associated with energy loss. △ Less

Submitted 14 March, 2024; v1 submitted 11 March, 2024; originally announced March 2024.

Analytic regularity for a singularly perturbed fourth order reaction-diffusion boundary value problem

Authors: P. Constantinou, C. Xenophontos

Abstract: We consider a fourth order, reaction-diffusion type, singularly perturbed boundary value problem, and the regularity of its solution. Specifically, we provide estimates for arbitrary order derivatves, which are explicit in the singular perturbation parameter as well as the differentiation order. Such estimates are needed for the numerical analysis of high order methods, e.g.hp Finite Element Metho… ▽ More We consider a fourth order, reaction-diffusion type, singularly perturbed boundary value problem, and the regularity of its solution. Specifically, we provide estimates for arbitrary order derivatves, which are explicit in the singular perturbation parameter as well as the differentiation order. Such estimates are needed for the numerical analysis of high order methods, e.g.hp Finite Element Method (FEM). △ Less

Submitted 14 November, 2023; v1 submitted 12 November, 2023; originally announced November 2023.

Comments: arXiv admin note: text overlap with arXiv:1901.09397

MSC Class: 65L11

Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice Fabrication

Authors: Taylor J. Z. Stock, Oliver Warschkow, Procopios C. Constantinou, David R. Bowler, Steven R. Schofield, Neil J. Curson

Abstract: Artificial lattices constructed from individual dopant atoms within a semiconductor crystal hold promise to provide novel materials with tailored electronic, magnetic, and optical properties. These custom engineered lattices are anticipated to enable new, fundamental discoveries in condensed matter physics and lead to the creation of new semiconductor technologies including analog quantum simulato… ▽ More Artificial lattices constructed from individual dopant atoms within a semiconductor crystal hold promise to provide novel materials with tailored electronic, magnetic, and optical properties. These custom engineered lattices are anticipated to enable new, fundamental discoveries in condensed matter physics and lead to the creation of new semiconductor technologies including analog quantum simulators and universal solid-state quantum computers. In this work, we report precise and repeatable, substitutional incorporation of single arsenic atoms into a silicon lattice. We employ a combination of scanning tunnelling microscopy hydrogen resist lithography and a detailed statistical exploration of the chemistry of arsine on the hydrogen terminated silicon (001) surface, to show that single arsenic dopants can be deterministically placed within four silicon lattice sites and incorporated with 97$\pm$2% yield. These findings bring us closer to the ultimate frontier in semiconductor technology: the deterministic assembly of atomically precise dopant and qubit arrays at arbitrarily large scales. △ Less

Submitted 9 November, 2023; originally announced November 2023.

Direct observation of altermagnetic band splitting in CrSb thin films

Authors: Sonka Reimers, Lukas Odenbreit, Libor Smejkal, Vladimir N. Strocov, Procopios Constantinou, Anna Birk Hellenes, Rodrigo Jaeschke Ubiergo, Warlley H. Campos, Venkata K. Bharadwaj, Atasi Chakraborty, Thiboud Denneulin, Wen Shi, Rafal E. Dunin-Borkowski, Suvadip Das, Mathias Kläui, Jairo Sinova, Martin Jourdan

Abstract: Altermagnetism represents an emergent collinear magnetic phase with compensated order and an unconventional alternating even-parity wave spin order in the non-relativistic band structure. We investigate directly this unconventional band splitting near the Fermi energy through spinintegrated soft X-ray angular resolved photoemission spectroscopy. The experimentally obtained angle-dependent photoemi… ▽ More Altermagnetism represents an emergent collinear magnetic phase with compensated order and an unconventional alternating even-parity wave spin order in the non-relativistic band structure. We investigate directly this unconventional band splitting near the Fermi energy through spinintegrated soft X-ray angular resolved photoemission spectroscopy. The experimentally obtained angle-dependent photoemission intensity, acquired from epitaxial thin films of the predicted altermagnet CrSb, demonstrates robust agreement with the corresponding band structure calculations. In particular, we observe the distinctive splitting of an electronic band on a low-symmetry path in the Brilliouin zone that connects two points featuring symmetry-induced degeneracy. The measured large magnitude of the spin splitting of approximately 0.6 eV and the position of the band just below the Fermi energy underscores the signifcance of altermagnets for spintronics based on robust broken time reversal symmetry responses arising from exchange energy scales, akin to ferromagnets, while remaining insensitive to external magnetic fields and possessing THz dynamics, akin to antiferromagnets. △ Less

Submitted 20 February, 2024; v1 submitted 26 October, 2023; originally announced October 2023.

Comments: 13 pages, 9 figures (including supplementary information)

Journal ref: Nat Commun 15, 2116 (2024)

k-dependent proximity-induced modulation of spin-orbit interaction in MoSe2 interfaced with amorphous Pb

Authors: Fatima Alarab, Ján Minár, Procopios Constantinou, Dhani Nafday, Thorsten Schmitt, Xiaoqiang Wang, Vladimir N. Strocov

Abstract: The ability to modulate the spin-orbit (SO) interaction is crucial for engineering a wide range of spintronics-based quantum devices, extending from state-of-the-art data storage to materials for quantum computing. The use of proximity-induced effects for this purpose may become the mainstream approach, whereas their experimental verification using angle-resolved photoelectron spectroscopy (ARPES)… ▽ More The ability to modulate the spin-orbit (SO) interaction is crucial for engineering a wide range of spintronics-based quantum devices, extending from state-of-the-art data storage to materials for quantum computing. The use of proximity-induced effects for this purpose may become the mainstream approach, whereas their experimental verification using angle-resolved photoelectron spectroscopy (ARPES) has so far been elusive. Here, using the advantages of soft-X-ray ARPES on its probing depth and intrinsic resolution in three-dimensional momentum k, we identify a distinct modulation of the SO interaction in a van der Waals semiconductor (MoSe2) proximitized to a high-Z metal (Pb), and measure its variation through the k-space. The strong SO field from Pb boosts the SO splitting by up to 30% at the H-point of the bulk Brillouin zone, the spin-orbit hotspot of MoSe2. Tunability of the splitting via the Pb thickness allows its tailoring to particular applications in emerging quantum devices. △ Less

Submitted 17 October, 2023; originally announced October 2023.

Resistless EUV lithography: photon-induced oxide patterning on silicon

Authors: Li-Ting Tseng, Prajith Karadan, Dimitrios Kazazis, Procopios C. Constantinou, Taylor J. Z. Stock, Neil J. Curson, Steven R. Schofield, Matthias Muntwiler, Gabriel Aeppli, Yasin Ekinci

Abstract: In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated Si(100) surface in the absence of a photoresist. EUV lithography is the leading lithography technique in semiconductor manufacturing due to its high resolution and throughput, but future progress in resolution can be hampered because of the inherent limitations of the resists. We show that EUV photons ca… ▽ More In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated Si(100) surface in the absence of a photoresist. EUV lithography is the leading lithography technique in semiconductor manufacturing due to its high resolution and throughput, but future progress in resolution can be hampered because of the inherent limitations of the resists. We show that EUV photons can induce surface reactions on a partially H-terminated Si surface and assist the growth of an oxide layer, which serves as an etch mask. This mechanism is different from the H-desorption in scanning tunneling microscopy-based lithography. We achieve SiO2/Si gratings with 75 nm half-pitch and 31 nm height, demonstrating the efficacy of the method and the feasibility of patterning with EUV lithography without the use of a photoresist. Further development of the resistless EUV lithography method can be a viable approach to nm-scale lithography by overcoming the inherent resolution and roughness limitations of photoresist materials. △ Less

Submitted 2 October, 2023; originally announced October 2023.

Comments: 15 pages, 7 figures

Journal ref: L.-T. Tseng, Science Advances, Vol 9, eadf5997 (2023)

Momentum-space imaging of ultra-thin electron liquids in delta-doped silicon

Authors: Procopios Constantinou, Taylor J. Z. Stock, Eleanor Crane, Alexander Kölker, Marcel van Loon, Juerong Li, Sarah Fearn, Henric Bornemann, Nicolò D'Anna, Andrew J. Fisher, Vladimir N. Strocov, Gabriel Aeppli, Neil J. Curson, Steven R. Schofield

Abstract: Two-dimensional dopant layers ($δ$-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such as carrier densities, effective masses, and confinement thicknesses for 2DELs have traditionally been extracted from quantum magnetotransport. In principle, the parameters are immediately readable from the one-electron… ▽ More Two-dimensional dopant layers ($δ$-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such as carrier densities, effective masses, and confinement thicknesses for 2DELs have traditionally been extracted from quantum magnetotransport. In principle, the parameters are immediately readable from the one-electron spectral function that can be measured by angle-resolved photoemission spectroscopy (ARPES). Here, buried 2DEL $δ$-layers in silicon are measured with soft X-ray (SX) ARPES to obtain detailed information about their filled conduction bands and extract device-relevant properties. This study takes advantage of the larger probing depth and photon energy range of SX-ARPES relative to vacuum ultraviolet (VUV) ARPES to accurately measure the $δ$-layer electronic confinement. The measurements are made on ambient-exposed samples and yield extremely thin ($\approx 1$ $nm$) and dense ($\approx$ $10^{14}$ $cm^2$) 2DELs. Critically, this method is used to show that $δ$-layers of arsenic exhibit better electronic confinement than $δ$-layers of phosphorus fabricated under identical conditions. △ Less

Submitted 29 September, 2023; originally announced September 2023.

Comments: Published in Advanced Science as a Research Article

Altermagnetic lifting of Kramers spin degeneracy

Authors: J. Krempaský, L. Šmejkal, S. W. D'Souza, M. Hajlaoui, G. Springholz, K. Uhlířová, F. Alarab, P. C. Constantinou, V. Strokov, D. Usanov, W. R. Pudelko, R. González-Hernández, A. Birk Hellenes, Z. Jansa, H. Reichlová, Z. Šobáň, R. D. Gonzalez Betancourt, P. Wadley, J. Sinova, D. Kriegner, J. Minár, J. H. Dil, T. Jungwirth

Abstract: Lifted Kramers spin-degeneracy has been among the central topics of condensed-matter physics since the dawn of the band theory of solids. It underpins established practical applications as well as current frontier research, ranging from magnetic-memory technology to topological quantum matter. Traditionally, lifted Kramers spin-degeneracy has been considered to originate from two possible internal… ▽ More Lifted Kramers spin-degeneracy has been among the central topics of condensed-matter physics since the dawn of the band theory of solids. It underpins established practical applications as well as current frontier research, ranging from magnetic-memory technology to topological quantum matter. Traditionally, lifted Kramers spin-degeneracy has been considered to originate from two possible internal symmetry-breaking mechanisms. The first one refers to time-reversal symmetry breaking by magnetization of ferromagnets, and tends to be strong due to the non-relativistic exchange-coupling origin. The second mechanism applies to crystals with broken inversion symmetry, and tends to be comparatively weaker as it originates from the relativistic spin-orbit coupling. A recent theory work based on spin-symmetry classification has identified an unconventional magnetic phase, dubbed altermagnetic, that allows for lifting the Kramers spin degeneracy without net magnetization and inversion-symmetry breaking. Here we provide the confirmation using photoemission spectroscopy and ab initio calculations. We identify two distinct unconventional mechanisms of lifted Kramers spin degeneracy generated by the altermagnetic phase of centrosymmetric MnTe with vanishing net magnetization. Our observation of the altermagnetic lifting of the Kramers spin degeneracy can have broad consequences in magnetism. It motivates exploration and exploitation of the unconventional nature of this magnetic phase in an extended family of materials, ranging from insulators and semiconductors to metals and superconductors, that have been either identified recently or perceived for many decades as conventional antiferromagnets. △ Less

Submitted 21 August, 2023; originally announced August 2023.

Static disorder in soft X-ray angle-resolved photoemission spectroscopy: theory and application to ion-bombarded InAs(110)

Authors: Enrico Della Valle, Procopios Constantinou, Thorsten Schmitt, Gabriel Aeppli, Vladimir N. Strocov

Abstract: Angle-resolved photoemission spectroscopy (ARPES) is one of the most ubiquitous characterization techniques utilized in the field of condensed matter physics. The resulting spectral intensity consists of a coherent and incoherent part, whose relative contribution is governed by atomic disorder, where thermal contribution is expressed in terms of the Debye-Waller factor (DWF). In this work, we pres… ▽ More Angle-resolved photoemission spectroscopy (ARPES) is one of the most ubiquitous characterization techniques utilized in the field of condensed matter physics. The resulting spectral intensity consists of a coherent and incoherent part, whose relative contribution is governed by atomic disorder, where thermal contribution is expressed in terms of the Debye-Waller factor (DWF). In this work, we present a soft-X-ray study on the sputter-induced disorder of InAs(110) surface. We define a new quantity, referred to as the coherence factor FC, which is the analogue of the DWF, extended to static disorder. We show that FC alone can be used to quantify the depletion of coherent intensity with increasing disorder, and, in combination with the DWF, allows considerations of thermal and static disorder effects on the same footing. Our study also unveils an intriguing finding: as disorder increases, the ARPES intensity of quantum well states originating from the conduction band depletes more rapidly compared to the valence bands. This difference can be attributed to the predominance of quasi-elastic defect scattering and the difference in phase space available for such scattering for conduction-band (CB) and valence-band (VB) initial states. Specifically, the absence of empty states well below the Fermi energy (EF) hinders the quasi-elastic scattering of the VB states, while their abundance in vicinity of EF enhances the scattering rate of the CB states. Additionally, we observe no noticeable increase in broadening of the VB dispersions as the sputter-induced disorder increases. This observation aligns with the notion that valence initial states are less likely to experience the quasi-elastic defect scattering, which would shorten their lifetime, and with the random uncorrelated nature of the defects introduced by the ion sputtering. △ Less

Submitted 7 August, 2023; originally announced August 2023.

Spatially resolved dielectric loss at the Si/SiO$_2$ interface

Authors: Megan Cowie, Taylor J. Z. Stock, Procopios C. Constantinou, Neil Curson, Peter Grütter

Abstract: The Si/SiO$_2$ interface is populated by isolated trap states which modify its electronic properties. These traps are of critical interest for the development of semiconductor-based quantum sensors and computers, as well as nanoelectronic devices. Here, we study the electric susceptibility of the Si/SiO$_2$ interface with nm spatial resolution using frequency-modulated atomic force microscopy to m… ▽ More The Si/SiO$_2$ interface is populated by isolated trap states which modify its electronic properties. These traps are of critical interest for the development of semiconductor-based quantum sensors and computers, as well as nanoelectronic devices. Here, we study the electric susceptibility of the Si/SiO$_2$ interface with nm spatial resolution using frequency-modulated atomic force microscopy to measure a patterned dopant delta-layer buried 2 nm beneath the silicon native oxide interface. We show that surface charge organization timescales, which range from 1-150 ns, increase significantly around interfacial states. We conclude that dielectric loss under time-varying gate biases at MHz and sub-MHz frequencies in metal-insulator-semiconductor capacitor device architectures is highly spatially heterogeneous over nm length scales. Supplemental GIFs can be found at https://doi.org/10.6084/m9.figshare.25546687 △ Less

Submitted 4 April, 2024; v1 submitted 23 June, 2023; originally announced June 2023.

Are high-energy photoemission final states free-electron-like?

Authors: V. N. Strocov, L. L. Lev, F. Alarab, P. Constantinou, T. Schmitt, T. J. Z. Stock, L. Nicolaï, J. Očenášek, J. Minár

Abstract: Three-dimensional (3D) electronic band structure is fundamental for understanding a vast diversity of physical phenomena in solid-state systems, including topological phases, interlayer interactions in van der Waals materials, dimensionality-driven phase transitions, etc. Interpretation of ARPES data in terms of 3D electron dispersions is commonly based on the free-electron approximation for the p… ▽ More Three-dimensional (3D) electronic band structure is fundamental for understanding a vast diversity of physical phenomena in solid-state systems, including topological phases, interlayer interactions in van der Waals materials, dimensionality-driven phase transitions, etc. Interpretation of ARPES data in terms of 3D electron dispersions is commonly based on the free-electron approximation for the photoemission final states. Our soft-X-ray ARPES data on Ag metal reveals, however, that even at high excitation energies the final states can be a way more complex, incorporating several Bloch waves with different out-of-plane momenta. Such multiband final states manifest themselves as a complex structure and excessive broadening of the spectral peaks from 3D electron states. We analyse the origins of this phenomenon, and trace it to other materials such as Si and GaN. Our findings are essential for accurate determination of the 3D band structure over a wide range of materials and excitation energies in the ARPES experiment. △ Less

Submitted 30 December, 2022; originally announced January 2023.

Non-destructive X-ray imaging of patterned delta-layer devices in silicon

Authors: Nicolò D'Anna, Dario Ferreira Sanchez, Guy Matmon, Jamie Bragg, Procopios C. Constantinou, Taylor J. Z. Stock, Sarah Fearn, Steven R. Schofield, Neil J. Curson, Marek Bartkowiak, Y. Soh, Daniel Grolimund, Simon Gerber, Gabriel Aeppli

Abstract: The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as phosphorous and arsenic. However, the ability to non-destructively obtain atomic-species-specific images of the final structure, which would be an indispensable tool for b… ▽ More The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as phosphorous and arsenic. However, the ability to non-destructively obtain atomic-species-specific images of the final structure, which would be an indispensable tool for building more complex nano-scale devices, such as quantum co-processors, remains an unresolved challenge. Here we exploit X-ray fluorescence to create an element-specific image of As dopants in silicon, with dopant densities in absolute units and a resolution limited by the beam focal size (here $\sim1~μ$m), without affecting the device's low temperature electronic properties. The As densities provided by the X-ray data are compared to those derived from Hall effect measurements as well as the standard non-repeatable, scanning tunnelling microscopy and secondary ion mass spectroscopy, techniques. Before and after the X-ray experiments, we also measured the magneto-conductance, dominated by weak localisation, a quantum interference effect extremely sensitive to sample dimensions and disorder. Notwithstanding the $1.5\times10^{10}$ Sv ($1.5\times10^{16}$ Rad/cm$^{-2}$) exposure of the device to X-rays, all transport data were unchanged to within experimental errors, corresponding to upper bounds of 0.2 Angstroms for the radiation-induced motion of the typical As atom and 3$\%$ for the loss of activated, carrier-contributing dopants. With next generation synchrotron radiation sources and more advanced optics, we foresee that it will be possible to obtain X-ray images of single dopant atoms within resolved radii of 5 nm. △ Less

Submitted 14 April, 2023; v1 submitted 19 August, 2022; originally announced August 2022.

Journal ref: Adv. Electron. Mater. 2023, 2201212

Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy

Authors: Taylor J. Z. Stock, Oliver Warschkow, Procopios C. Constantinou, Juerong Li, Sarah Fearn, Eleanor Crane, Emily V. S. Hofmann, Alexander Kölker, David R. McKenzie, Steven R. Schofield, Neil J. Curson

Abstract: Over the last two decades, prototype devices for future classical and quantum computing technologies have been fabricated, by using scanning tunneling microscopy and hydrogen resist lithography to position phosphorus atoms in silicon with atomic-scale precision. Despite these successes, phosphine remains the only donor precursor molecule to have been demonstrated as compatible with the hydrogen re… ▽ More Over the last two decades, prototype devices for future classical and quantum computing technologies have been fabricated, by using scanning tunneling microscopy and hydrogen resist lithography to position phosphorus atoms in silicon with atomic-scale precision. Despite these successes, phosphine remains the only donor precursor molecule to have been demonstrated as compatible with the hydrogen resist lithography technique. The potential benefits of atomic-scale placement of alternative dopant species have, until now, remained unexplored. In this work, we demonstrate successful fabrication of atomic-scale structures of arsenic-in-silicon. Using a scanning tunneling microscope tip, we pattern a monolayer hydrogen mask to selectively place arsenic atoms on the Si(001) surface using arsine as the precursor molecule. We fully elucidate the surface chemistry and reaction pathways of arsine on Si(001), revealing significant differences to phosphine. We explain how these differences result in enhanced surface immobilization and in-plane confinement of arsenic compared to phosphorus, and a dose-rate independent arsenic saturation density of $0.24{\pm}0.04$ ML. We demonstrate the successful encapsulation of arsenic delta-layers using silicon molecular beam epitaxy, and find electrical characteristics that are competitive with equivalent structures fabricated with phosphorus. Arsenic delta-layers are also found to offer improvement in out-of-plane confinement compared to similarly prepared phosphorus layers, while still retaining >80% carrier activation and sheet resistances of $<2 kΩ/{\square}$. These excellent characteristics of arsenic represent opportunities to enhance existing capabilities of atomic-scale fabrication of dopant structures in silicon, and are particularly important for three-dimensional devices, where vertical control of the position of device components is critical. △ Less

Submitted 15 October, 2019; originally announced October 2019.

Testing Separability of Functional Time Series

Authors: Panayiotis Constantinou, Piotr Kokoszka, Matthew Reimherr

Abstract: We derive and study a significance test for determining if a panel of functional time series is separable. In the context of this paper, separability means that the covariance structure factors into the product of two functions, one depending only on time and the other depending only on the coordinates of the panel. Separability is a property which can dramatically improve computational efficiency… ▽ More We derive and study a significance test for determining if a panel of functional time series is separable. In the context of this paper, separability means that the covariance structure factors into the product of two functions, one depending only on time and the other depending only on the coordinates of the panel. Separability is a property which can dramatically improve computational efficiency by substantially reducing model complexity. It is especially useful for functional data as it implies that the functional principal components are the same for each member of the panel. However such an assumption must be verified before proceeding with further inference. Our approach is based on functional norm differences and provides a test with well controlled size and high power. We establish our procedure quite generally, allowing one to test separability of autocovariances as well. In addition to an asymptotic justification, our methodology is validated by a simulation study. It is applied to functional panels of particulate pollution and stock market data. △ Less

Submitted 16 January, 2018; originally announced January 2018.

Regression Discontinuity Designs: A Decision Theoretic Approach

Authors: Panayiota Constantinou, Aidan G. O'Keeffe

Abstract: The regression discontinuity design (RDD) is a quasi-experimental design that can be used to identify and estimate the causal effect of a treatment using observational data. In an RDD, a pre-specified rule is used for treatment assignment, whereby a subject is assigned to the treatment (control) group whenever their observed value of a specific continuous variable is greater than or equal to (is l… ▽ More The regression discontinuity design (RDD) is a quasi-experimental design that can be used to identify and estimate the causal effect of a treatment using observational data. In an RDD, a pre-specified rule is used for treatment assignment, whereby a subject is assigned to the treatment (control) group whenever their observed value of a specific continuous variable is greater than or equal to (is less than) a fixed threshold. Sharp RDDs occur when guidelines are strictly adhered to and fuzzy RDDs occur when the guidelines or not strictly adhered to. In this paper, we take a rigorous decision theoretic approach to formally study causal effect identification and estimation in both sharp and fuzzy RDDs. We use the language and calculus of conditional independence to express and explore in a clear and precise manner the conditions implied by each RDD and investigate additional assumptions under which the identification of the average causal effect at the threshold can be achieved. We apply the methodology in an example concerning the relationship between statins (a class of cholesterol-lowering drugs) and low density lipoprotein (LDL) cholesterol using a real set of primary care data. △ Less

Submitted 4 January, 2016; originally announced January 2016.

Comments: 20 pages, 4 figures

Extended Conditional Independence and Applications in Causal Inference

Authors: Panayiota Constantinou, A. Philip Dawid

Abstract: The goal of this paper is to integrate the notions of stochastic conditional independence and variation conditional independence under a more general notion of extended conditional independence. We show that under appropriate assumptions the calculus that applies for the two cases separately (axioms of a separoid) still applies for the extended case. These results provide a rigorous basis for a wi… ▽ More The goal of this paper is to integrate the notions of stochastic conditional independence and variation conditional independence under a more general notion of extended conditional independence. We show that under appropriate assumptions the calculus that applies for the two cases separately (axioms of a separoid) still applies for the extended case. These results provide a rigorous basis for a wide range of statistical concepts, including ancillarity and sufficiency, and, in particular, the Decision Theoretic framework for statistical causality, which uses the language and calculus of conditional independence in order to express causal properties and make causal inferences. △ Less

Submitted 1 December, 2015; originally announced December 2015.

Journal ref: Annals of Statistics 45 (2017), 2618-2653

Testing separability of space--time functional processes

Authors: Panayiotis Constantinou, Piotr Kokoszka, Matthew Reimherr

Abstract: We present a new methodology and accompanying theory to test for separability of spatio-temporal functional data. In spatio-temporal statistics, separability is a common simplifying assumption concerning the covariance structure which, if true, can greatly increase estimation accuracy and inferential power. While our focus is on testing for the separation of space and time in spatio-temporal data,… ▽ More We present a new methodology and accompanying theory to test for separability of spatio-temporal functional data. In spatio-temporal statistics, separability is a common simplifying assumption concerning the covariance structure which, if true, can greatly increase estimation accuracy and inferential power. While our focus is on testing for the separation of space and time in spatio-temporal data, our methods can be applied to any area where separability is useful, including biomedical imaging. We present three tests, one being a functional extension of the Monte Carlo likelihood method of Mitchell et. al. (2005), while the other two are based on quadratic forms. Our tests are based on asymptotic distributions of maximum likelihood estimators, and do not require Monte Carlo or bootstrap replications. The specification of the joint asymptotic distribution of these estimators is the main theoretical contribution of this paper. It can be used to derive many other tests. The main methodological finding is that one of the quadratic form methods, which we call a norm approach, emerges as a clear winner in terms of finite sample performance in nearly every setting we considered. The norm approach focuses directly on the Frobenius distance between the spatio-temporal covariance function and its separable approximation. We demonstrate the efficacy of our methods via simulations and an application to Irish wind data. △ Less

Submitted 23 September, 2015; originally announced September 2015.

A Formal Treatment of Sequential Ignorability

Authors: A. Philip Dawid, Panayiota Constantinou

Abstract: Taking a rigorous formal approach, we consider sequential decision problems involving observable variables, unobservable variables, and action variables. We can typically assume the property of extended stability, which allows identification (by means of G-computation) of the consequence of a specified treatment strategy if the unobserved variables are, in fact, observed - but not generally otherw… ▽ More Taking a rigorous formal approach, we consider sequential decision problems involving observable variables, unobservable variables, and action variables. We can typically assume the property of extended stability, which allows identification (by means of G-computation) of the consequence of a specified treatment strategy if the unobserved variables are, in fact, observed - but not generally otherwise. However, under certain additional special conditions we can infer simple stability (or sequential ignorability), which supports G-computation based on the observed variables alone. One such additional condition is sequential randomization, where the unobserved variables essentially behave as random noise in their effects on the actions. Another is sequential irrelevance, where the unobserved variables do not influence future observed variables. In the latter case, to deduce sequential ignorability in full generality requires additional positivity conditions. We show here that these positivity conditions are not required when all variables are discrete. △ Less

Submitted 3 July, 2013; originally announced July 2013.

Comments: 25 pages, 5 figures, 1 table

Journal ref: Statistics in Biosciences 6 (2014), 166-188

Radio Resource Allocation Algorithms for Multi-Service OFDMA Networks: The Uniform Power Loading Scenario

Authors: Antonis G. Gotsis, Dimitris I. Komnakos, Demosthenes D. Vouyioukas, Philip Constantinou

Abstract: Adaptive Radio Resource Allocation is essential for guaranteeing high bandwidth and power utilization as well as satisfying heterogeneous Quality-of-Service requests regarding next generation broadband multicarrier wireless access networks like LTE and Mobile WiMAX. A downlink OFDMA single-cell scenario is considered where heterogeneous Constant-Bit-Rate and Best-Effort QoS profiles coexist and th… ▽ More Adaptive Radio Resource Allocation is essential for guaranteeing high bandwidth and power utilization as well as satisfying heterogeneous Quality-of-Service requests regarding next generation broadband multicarrier wireless access networks like LTE and Mobile WiMAX. A downlink OFDMA single-cell scenario is considered where heterogeneous Constant-Bit-Rate and Best-Effort QoS profiles coexist and the power is uniformly spread over the system bandwidth utilizing a Uniform Power Loading (UPL) scenario. We express this particular QoS provision scenario in mathematical terms, as a variation of the well-known generalized assignment problem answered in the combinatorial optimization field. Based on this concept, we propose two heuristic search algorithms for dynamically allocating subchannels to the competing QoS classes and users which are executed under polynomially-bounded cost. We also propose an Integer Linear Programming model for optimally solving and acquiring a performance upper bound for the same problem at reasonable yet high execution times. Through extensive simulation results we show that the proposed algorithms exhibit high close-to-optimal performance, thus comprising attractive candidates for implementation in modern OFDMA-based systems. △ Less

Submitted 15 November, 2012; originally announced November 2012.

Comments: accepted for publication at the Springer Telecommunication Systems Journal (TSMJ)