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Raman spectroscopy study of pressure-induced phase transitions in single crystal CuInP2S6
Authors:
R. Rao,
B. S. Conner,
J. Jiang,
R. Pachter,
M. A. Susner
Abstract:
Two dimensional ferroic materials exhibit a variety of functional properties that can be tuned by temperature and pressure. CuInP2S6 is a layered material that is ferrielectric at room temperature and whose properties are a result of the unique structural arrangement of ordered Cu and In cations within a P2S6 anion backbone. Here, we investigate the effect of hydrostatic pressure on the structure…
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Two dimensional ferroic materials exhibit a variety of functional properties that can be tuned by temperature and pressure. CuInP2S6 is a layered material that is ferrielectric at room temperature and whose properties are a result of the unique structural arrangement of ordered Cu and In cations within a P2S6 anion backbone. Here, we investigate the effect of hydrostatic pressure on the structure of CuInP2S6 single crystals through a detailed Raman spectroscopy study. Analysis of the peak frequencies, intensities and widths reveals four high pressure regimes. At 5 GPa the material undergoes a monoclinic-trigonal phase transition. At higher pressures (5 - 12 GPa) we see Raman peak sharpening, indicative of a change in the electronic structure, followed by an incommensurate phase between 12 - 17 GPa. Above 17 GPa we see evidence for metallization in the material. The original state of the material is fully recovered upon decompression, showing that hydrostatic pressure could be used to tune the electronic and ferrielectric properties of CuInP2S6.
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Submitted 13 June, 2023; v1 submitted 11 June, 2023;
originally announced June 2023.
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Investigating strain between phase-segregated domains in Cu-deficient CuInP2S6
Authors:
Rahul Rao,
Ryan Selhorst,
Jie Jiang,
Benjamin S. Conner,
Ryan Siebenaller,
Emmanuel Rowe,
Andrea Giordano,
Ruth Pachter,
Michael A. Susner
Abstract:
CuInP2S6 (CIPS) is an emerging layered ferroelectric material with a TC above room temperature. When synthesized with Cu deficiencies (i.e., Cu1-xIn1+x/3P2S6), the material segregates into CIPS and In4/3P2S6 (IPS) self-assembled heterostructures within the same single crystal. This segregation results in significant in-plane and out-of-plane strains between the CIPS and IPS phases as the volume fr…
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CuInP2S6 (CIPS) is an emerging layered ferroelectric material with a TC above room temperature. When synthesized with Cu deficiencies (i.e., Cu1-xIn1+x/3P2S6), the material segregates into CIPS and In4/3P2S6 (IPS) self-assembled heterostructures within the same single crystal. This segregation results in significant in-plane and out-of-plane strains between the CIPS and IPS phases as the volume fraction of CIPS (IPS) domains shrink (grow) with decreasing Cu fraction. Here, we synthesized CIPS with varying amounts of Cu (x = 0, 0.2, 0.3, 0.4, 0.5, 0.7, 0.8 and 1) and measured the strains between the CIPS and IPS phases through the evolution of the respective Raman, infrared, and optical reflectance spectra. Density functional theory calculations revealed vibrational modes unique to the CIPS and IPS phases, which can be used to distinguish between the two phases through two-dimensional Raman map**. A comparison of the composition-dependent frequencies and intensities of the CIPS and IPS Raman peaks showed interesting trends with decreasing CIPS phase fraction (i.e., Cu/In ratio). Our data reveal red- and blue-shifted Raman and infrared peak frequencies that we correlate to lattice strains arising from the segregation of the material into CIPS and IPS chemical domains. The strain is highest for a Cu/In ratio of 0.33 (Cu0.4In1.2P2S6), which we attribute to equal and opposite strains exerted by the CIPS and IPS phases on each other. In addition, bandgaps extracted from the optical reflectance spectra revealed a decrease in values, with the lowest value (~ 2.3 eV) for Cu0.4In1.2P2S6.
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Submitted 24 May, 2023;
originally announced May 2023.
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Pressure-Induced Insulator-to-Metal Transition in van der Waals compound CoPS$_3$
Authors:
Takahiro Matsuoka,
Rahul Rao,
Michael A. Susner,
Benjamin S. Conner,
Dongzhou Zhang,
David Mandrus
Abstract:
We have studied the insulator-to-metal transition and crystal structure evolution under high pressure in the van der Waals compound CoPS$_3$ through $\textit{in-situ}$ electrical resistance, Hall resistance, magnetoresistance, X-ray diffraction, and Raman scattering measurements. CoPS$_3$ exhibits a $C2/m$ $\rightarrow$ $P\overline{3}$ structural transformation at 7 GPa accompanied by a 2.9$\%$ re…
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We have studied the insulator-to-metal transition and crystal structure evolution under high pressure in the van der Waals compound CoPS$_3$ through $\textit{in-situ}$ electrical resistance, Hall resistance, magnetoresistance, X-ray diffraction, and Raman scattering measurements. CoPS$_3$ exhibits a $C2/m$ $\rightarrow$ $P\overline{3}$ structural transformation at 7 GPa accompanied by a 2.9$\%$ reduction in the volume per formula unit. Concomitantly, the electrical resistance decreases significantly, and CoPS$_3$ becomes metallic. This metallic CoPS$_3$ is a hole-dominant conductor with multiple conduction bands. The linear magnetoresistance and the small volume collapse at the metallization suggest the incomplete high-spin $\rightarrow$ low-spin transition in the metallic phase. Thus, the metallic CoPS$_3$ possibly possesses an inhomogeneous magnetic moment distribution and short-range magnetic ordering. This report summarizes the comprehensive phase diagram of $M$PS$_3$ ($M$ = V, Mn, Fe, Co, Ni, and Cd) that metalize under pressures.
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Submitted 2 April, 2023; v1 submitted 15 November, 2022;
originally announced November 2022.
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Polarization-controlled volatile ferroelectric and capacitive switching in Sn$_2$P$_2$S$_6$
Authors:
Sabine M. Neumayer,
Anton V. Ievlev,
Alexander Tselev,
Sergey A. Basun,
Benjamin S. Conner,
Michael A. Susner,
Petro Maksymovych
Abstract:
Smart electronic circuits that support neuromorphic computing on the hardware level necessitate materials with memristive, memcapacitive, and neuromorphic-like functional properties; in short, the electronic response must depend on the voltage history, thus enabling learning algorithms. Here we demonstrate volatile ferroelectric switching of Sn$_2$P$_2$S$_6$ at room temperature and see that initia…
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Smart electronic circuits that support neuromorphic computing on the hardware level necessitate materials with memristive, memcapacitive, and neuromorphic-like functional properties; in short, the electronic response must depend on the voltage history, thus enabling learning algorithms. Here we demonstrate volatile ferroelectric switching of Sn$_2$P$_2$S$_6$ at room temperature and see that initial polarization orientation strongly determines the properties of polarization switching. In particular, polarization switching hysteresis is strongly imprinted by the original polarization state, shifting the regions of non-linearity toward zero-bias. As a corollary, polarization switching also enables effective capacitive switching, approaching the sought-after regime of memcapacitance. Landau-Ginzburg-Devonshire simulations demonstrate that one mechanism by which polarization can control the shape of the hysteresis loop is the existence of charged domain walls decorating the periphery of the repolarization nucleus. These walls oppose the growth of the switched domain and favor back-switching, thus creating a scenario of controlled volatile ferroelectric switching. Although the measurements were carried out with single crystals, prospectively volatile polarization switching can be tuned by tailoring sample thickness, domain wall mobility and electric fields, paving way to non-linear dielectric properties for smart electronic circuits.
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Submitted 26 August, 2022;
originally announced August 2022.
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Ferrielectric-paraelectric phase transitions in layered CuInP2S6 and CuInP2S6- In4/3P2S6 heterostructures: A Raman spectroscopy and X-ray diffraction study
Authors:
Rahul Rao,
Ryan Selhorst,
Benjamin S. Conner,
Michael A. Susner
Abstract:
CuInP2S6 (CIPS) is an emerging layered material that exhibits ferrielectric ordering well above room temperature (Curie temperature TC ~ 315 K). When synthesized with Cu deficiencies, CIPS spontaneously segregates into CuInP2S6 and In4/3P2S6 domains (CIPS-IPS), which form self-assembled heterostructures within the individual lamellae. This re-structuring and resultant chemical pressure raises the…
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CuInP2S6 (CIPS) is an emerging layered material that exhibits ferrielectric ordering well above room temperature (Curie temperature TC ~ 315 K). When synthesized with Cu deficiencies, CIPS spontaneously segregates into CuInP2S6 and In4/3P2S6 domains (CIPS-IPS), which form self-assembled heterostructures within the individual lamellae. This re-structuring and resultant chemical pressure raises the Curie temperature and, depending on the Cu concentration, can be up to ~340 K for the highest Cu deficiency. In both CIPS and CIPS-IPS, the loss of polarization through the ferrielectric-paraelectric transition is driven by the movement of Cu ions within the lattice. Here we uncover the microscopic origins underpinning the phase transitions in pure CIPS and CIPS-IPS (Cu0.4In1.2P2S6) by performing a temperature-dependent Raman and XRD study. We measured the frequencies and linewidths of various cation and anion phonon modes and compared them to the extracted atomic positions from the refinement of XRD data. Our analysis shows that in addition to the Cu cation movement, the anion octahedral cages experience significant strains as they deform to accommodate the redistribution of Cu ions upon heating. This results in several discontinuities in peak frequencies and linewidths close to 315 K in CIPS. In the CIPS-IPS heterostructure, this process begins around 315 K and ends around 330 K.
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Submitted 31 October, 2021;
originally announced November 2021.
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Pressure-driven phase transformations and phase segregation in ferrielectric CuInP$_2$S$_6$-In$_{4/3}$P$_2$S$_6$ self-assembled heterostructures
Authors:
Rahul Rao,
Benjamin S. Conner,
Ryan Selhorst,
Michael A. Susner
Abstract:
Layered multi-ferroic materials exhibit a variety of functional properties that can be tuned by varying the temperature and pressure. As-synthesized CuInP$_2$S$_6$ is a layered material that displays ferrielectric behavior at room temperature. When synthesized with Cu deficiencies, CuInP$_2$S$_6$ spontaneously phase segregates to form ferrielectric CuInP$_2$S$_6$ (CIPS) and paraelectric In…
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Layered multi-ferroic materials exhibit a variety of functional properties that can be tuned by varying the temperature and pressure. As-synthesized CuInP$_2$S$_6$ is a layered material that displays ferrielectric behavior at room temperature. When synthesized with Cu deficiencies, CuInP$_2$S$_6$ spontaneously phase segregates to form ferrielectric CuInP$_2$S$_6$ (CIPS) and paraelectric In$_{4/3}$P$_2$S$_6$ (IPS) domains in a two-dimensional self-assembled heterostructure. Here, we study the effect of hydrostatic pressure on the structure of Cu-deficient CuInP$_2$S$_6$ by Raman spectroscopy measurements up to 20 GPa. Detailed analysis of the frequencies, intensities, and linewidths of the Raman peaks reveals four discontinuities in the spectra around 2, 10, 13 and 17 GPa. At ~2 GPa, we observe a structural transition initiated by the diffusion of IPS domains, which culminates in a drastic reduction of the number of peaks around 10 GPa. We attribute this to a possible monoclinic-trigonal phase transition at 10 GPa. At higher pressures (~ 13 GPa), significant increases in peak intensities and sharpening of the Raman peaks suggest a bandgap-lowering and an isostructural electronic transition, with a possible onset of metallization at pressures above 17 GPa. When the pressure is released, the structure again phase-separates into two distinct chemical domains within the same single crystalline framework -- however, these domains are much smaller in size than the as-synthesized material resulting in suppression of ferroelectricity through nanoconfinement. Hydrostatic pressure can thus be used to tune the electronic and ferrielectric properties of Cu-deficient layered CuInP$_2$S$_6$.
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Submitted 30 August, 2021;
originally announced August 2021.
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Evidence for negative thermal expansion in the superconducting precursor phase SmFeAsO
Authors:
H. D. Zhou,
P. M. Sarte,
B. S. Conner,
L. Balicas,
C. R. Wiebe,
X. H. Chen,
T. Wu,
G. Wu,
R. H. Liu,
H. Chen,
D. F. Fang
Abstract:
The fluorine-doped rare-earth iron oxypnictide series SmFeAsO$_{1-x}$F$_x$ (0 $\leq x \leq$ 0.10) was investigated with high resolution powder x-ray scattering. In agreement with previous studies, the parent compound SmFeAsO exhibits a tetragonal-to-orthorhombic structural distortion at T$\rm{_{S}}$~=~130~K which is rapidly suppressed by $x \simeq$ 0.10 deep within the superconducting dome. The ch…
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The fluorine-doped rare-earth iron oxypnictide series SmFeAsO$_{1-x}$F$_x$ (0 $\leq x \leq$ 0.10) was investigated with high resolution powder x-ray scattering. In agreement with previous studies, the parent compound SmFeAsO exhibits a tetragonal-to-orthorhombic structural distortion at T$\rm{_{S}}$~=~130~K which is rapidly suppressed by $x \simeq$ 0.10 deep within the superconducting dome. The change in unit cell symmetry is followed by a previously unreported magnetoelastic distortion at 120~K. The temperature dependence of the thermal expansion coefficient $α_{V}$ reveals a rich phase diagram for SmFeAsO: (i) a global minimum at 125 K corresponds to the opening of a spin-density wave instability as measured by pump-probe femtosecond spectroscopy whilst (ii) a global maximum at 110 K corresponds to magnetic ordering of the Sm and Fe sublattices as measured by magnetic x-ray scattering. At much lower temperatures than T$\rm{_{N}}$, SmFeAsO exhibits a significant negative thermal expansion on the order of -40~ppm~$\cdot$~K$^{-1}$ in contrast to the behavior of other rare-earth oxypnictides such as PrFeAsO and the actinide oxypnictide NpFeAsO where the onset of $α<$ 0 only appears in the vicinity of magnetic ordering. Correlating this feature with the temperature and do** dependence of the resistivity and the unit cell parameters, we interpret the negative thermal expansion as being indicative of the possible condensation of itinerant electrons accompanying the opening of a SDW gap, consistent with transport measurements.
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Submitted 23 February, 2018;
originally announced February 2018.
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Growth and Characterization of Ce- Substituted Nd2Fe14B Single Crystals
Authors:
M. A. Susner,
B. S. Conner,
B. I. Saparov,
M. A. McGuire,
E. J. Crumlin,
G. M. Veith,
H. B. Cao,
K. V. Shanavas,
D. S. Parker,
B. C. Chakoumakos,
B. C. Sales
Abstract:
Single crystals of (Nd1-xCex)2Fe14B are grown out of Fe-(Nd,Ce) flux. Chemical and structural analysis of the crystals indicates that (Nd1-xCex)2Fe14B forms a solid solution until at least x = 0.38 with a Vegard-like variation of the lattice constants with x. Refinements of single crystal neutron diffraction data indicate that Ce has a slight site preference (7:3) for the 4g rare earth site over t…
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Single crystals of (Nd1-xCex)2Fe14B are grown out of Fe-(Nd,Ce) flux. Chemical and structural analysis of the crystals indicates that (Nd1-xCex)2Fe14B forms a solid solution until at least x = 0.38 with a Vegard-like variation of the lattice constants with x. Refinements of single crystal neutron diffraction data indicate that Ce has a slight site preference (7:3) for the 4g rare earth site over the 4f site. Magnetization measurements show that for x = 0.38 the saturation magnetization at 400 K, a temperature important to applications, falls from 29.8 for the parent Nd2Fe14B to 27.6 (mu)B/f.u., the anisotropy field decreases from 5.5 T to 4.7 T, and the Curie temperature decreases from 586 to 543 K. First principles calculations carried out within density functional theory are used to explain the decrease in magnetic properties due to Ce substitution. Though the presence of the lower-cost and more abundant Ce slightly affects these important magnetic characteristics, this decrease is not large enough to affect a multitude of applications. Ce-substituted Nd2Fe14B is therefore a potential high-performance permanent magnet material with substantially reduced Nd content.
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Submitted 31 August, 2015;
originally announced August 2015.
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Itinerant Antiferromagnetism in FeMnP0.8Si0.2 Single Crystals
Authors:
B. C. Sales,
M. A. Susner,
B. S. Conner,
J. Q. Yan,
A. F. May
Abstract:
Compounds based on the Fe2P structure have continued to attract interest because of the interplay between itinerant and localized magnetism in a non-centrosymmetric crystal structure, and because of the recent developments of these materials for magnetocaloric applications. Here we report the growth and characterization of mm size single crystals of FeMnP0.8Si0.2. Single crystal x-ray diffraction,…
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Compounds based on the Fe2P structure have continued to attract interest because of the interplay between itinerant and localized magnetism in a non-centrosymmetric crystal structure, and because of the recent developments of these materials for magnetocaloric applications. Here we report the growth and characterization of mm size single crystals of FeMnP0.8Si0.2. Single crystal x-ray diffraction, magnetization, resistivity, Hall and heat capacity data are reported. Surprisingly, the crystals exhibit itinerant antiferromagnetic order below 158 K with no hint of ferromagnetic behavior in the magnetization curves and with the spins ordered primarily in the ab plane. The room temperature resistivity is close to the Ioffe-Regel limit for a metal. Single crystal x-ray diffraction indicates a strong preference for Mn to occupy the larger pyramidal 3g site. The cation site preference in the as-grown crystals and the antiferromagnetism are not changed after high temperature anneals and a rapid quench to room temperature.
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Submitted 1 July, 2015;
originally announced July 2015.
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Vortex lock-in transition and evidence for transitions among commensurate kinked vortex configurations in single-layered Fe arsenides
Authors:
G. Li,
G. Grissonnanche,
B. S. Conner,
F. Wolff-Fabris,
C. Putzke,
N. D. Zhigadlo,
S. Katrych,
Z. Bukowski,
J. Karpinski,
L. Balicas
Abstract:
We report an angle-dependent study of the magnetic torque $τ(θ)$ within the vortex state of single-crystalline LaO$_{0.9}$F$_{0.1}$FeAs and SmO$_{0.9}$F$_{0.1}$FeAs as a function of both temperature $T$ and magnetic field $H$. Sharp peaks are observed at a critical angle $θ_c$ at either side of $θ=90^{\circ}$, where $θ$ is the angle between $H$ and the inter-planar \emph{c}-axis. $θ_c$ is interpre…
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We report an angle-dependent study of the magnetic torque $τ(θ)$ within the vortex state of single-crystalline LaO$_{0.9}$F$_{0.1}$FeAs and SmO$_{0.9}$F$_{0.1}$FeAs as a function of both temperature $T$ and magnetic field $H$. Sharp peaks are observed at a critical angle $θ_c$ at either side of $θ=90^{\circ}$, where $θ$ is the angle between $H$ and the inter-planar \emph{c}-axis. $θ_c$ is interpreted as the critical depinning angle where the vortex lattice, pinned and locked by the intrinsic planar structure, unlocks and acquires a component perpendicular to the planes. We observe a series of smaller replica peaks as a function of $θ$ and as $θ$ is swept away from the planar direction. These suggest commensurability effects between the period of the vortex lattice and the inter-planar distance leading to additional kinked vortex configurations.
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Submitted 11 March, 2013;
originally announced March 2013.
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Disorder-dependent superconducting phase-diagram at high magnetic fields in Fe$_{1 + y}$Se$_{x}$Te$_{1-x}$ ($x \sim 0.4$)
Authors:
T. Gebre,
G. Li,
J. B. Whalen,
B. S. Conner,
H. D. Zhou,
G. Grissonanche,
M. K. Kostov,
A. Gurevich,
T. Siegrist,
L. Balicas
Abstract:
We compare the superconducting phase-diagram under high magnetic fields (up to $H = 45$ T) of Fe$_{1+y}$Se$_{0.4}$Te$_{0.6}$ single crystals originally grown by the Bridgman-Stockbarger (BRST) technique, which were annealed to display narrow superconducting transitions and the optimal transition temperature $T_c \gtrsim 14$ K, with the diagram for samples of similar stoichiometry grown by the trav…
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We compare the superconducting phase-diagram under high magnetic fields (up to $H = 45$ T) of Fe$_{1+y}$Se$_{0.4}$Te$_{0.6}$ single crystals originally grown by the Bridgman-Stockbarger (BRST) technique, which were annealed to display narrow superconducting transitions and the optimal transition temperature $T_c \gtrsim 14$ K, with the diagram for samples of similar stoichiometry grown by the traveling-solvent floating-zone technique as well as with the phase-diagram reported for crystals grown by a self-flux method. We find that the so-annealed samples tend to display higher ratios $H_{c2}/T_c$, particularly for fields applied along the inter-planar direction, where the upper critical field $H_{c2}(T)$ exhibits a pronounced downward curvature followed by saturation at lower temperatures $T$. This last observation is consistent with previous studies indicating that this system is Pauli limited. An analysis of our $H_{c2}(T)$ data using a multiband theory suggests the emergence of the Farrel-Fulde-Larkin-Ovchnikov state at low temperatures. A detailed structural x-ray analysis, reveals no impurity phases but an appreciable degree of mosaicity in as-grown BRST single-crystals which remains unaffected by the annealing process. Energy-dispersive x-ray analysis showed that the annealed samples have a more homogeneous stoichiometric distribution of both Fe and Se with virtually the same content of interstitial Fe as the non-annealed ones. Thus, we conclude that stoichiometric disorder, in contrast to structural disorder, is detrimental to the superconducting phase diagram of this series under high magnetic fields. Finally, a scaling analysis of the fluctuation conductivity in the superconducting critical regime, suggests that the superconducting fluctuations have a two-dimensional character in this system.
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Submitted 4 November, 2011; v1 submitted 14 June, 2011;
originally announced June 2011.
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Fermi-surface of underdoped LaFeAsO1-xFx as determined by the Haas-van Alphen-effect
Authors:
G. Li,
B. S. Conner,
S. Weyeneth,
N. D. Zhigadlo,
S. Katrych,
Z. Bukowski,
J. Karpinski,
D. J. Singh,
M. D. Johannes,
L. Balicas
Abstract:
Here, we present a de Haas-van Alphen (dHvA) effect1 study on the newly discovered LaFeAsO1-xFx compounds2,3 in order to unveil the topography of the Fermi surface associated with their antiferromagnetic and superconducting phases, which is essential for understanding their magnetism, pairing symmetry and superconducting mechanism. Calculations 4 and surface-sensitive measurements 5,6,7 provided e…
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Here, we present a de Haas-van Alphen (dHvA) effect1 study on the newly discovered LaFeAsO1-xFx compounds2,3 in order to unveil the topography of the Fermi surface associated with their antiferromagnetic and superconducting phases, which is essential for understanding their magnetism, pairing symmetry and superconducting mechanism. Calculations 4 and surface-sensitive measurements 5,6,7 provided early guidance, but lead to contradictory results, generating a need for a direct experimental probe of their bulk Fermi surface. In antiferromagnetic LaFeAsO1-xFx 8,9 we observe a complex pattern in the Fourier spectrum of the oscillatory component superimposed onto the magnetic torque signal revealing a reconstructed Fermi surface, whose geometry is not fully described by band structure calculations. Surprisingly, several of the same frequencies, or Fermi surface cross-sectional areas, are also observed in superconducting LaFeAsO1-xFx (with a superconducting transition temperature Tc ~ 15 K). Although one could attribute this to inhomogeneous F do**, the corresponding effective masses are largely enhanced with respect to those of the antiferromagnetic compound. Instead, this implies the microscopic coexistence of superconductivity and antiferromagnetism on the same Fermi surface in the underdoped region of the phase diagram of the LaFeAsO1-xFx series. Thus, the dHvA-effect reveals a more complex Fermi surface topography than that predicted by band structure calculations4 upon which the currently proposed superconducting pairing scenarios10,11,12,13 are based, which could be at the origin of their higher Tcs when compared to their phosphide analogs.
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Submitted 7 September, 2010;
originally announced September 2010.
