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Probing the graphene/substrate interaction by electron tunneling decay
Authors:
Virginia Carnevali,
Alessandro Sala,
Pietro Biasin,
Mirco Panighel,
Giovanni Comelli,
Maria Peressi,
Cristina Africh
Abstract:
The electronic properties of graphene can be modified by the local interaction with a selected metal substrate. To probe this effect, Scanning Tunneling Microscopy is widely employed, particularly by means of local measurement via lock-in amplifier of the differential conductance and of the field emission resonance. In this article we propose an alternative, reliable method of probing the graphene…
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The electronic properties of graphene can be modified by the local interaction with a selected metal substrate. To probe this effect, Scanning Tunneling Microscopy is widely employed, particularly by means of local measurement via lock-in amplifier of the differential conductance and of the field emission resonance. In this article we propose an alternative, reliable method of probing the graphene/substrate interaction that is readily available to any STM apparatus. By testing the tunneling current as function of the tip/sample distance on nanostructured graphene on Ni(100), we demonstrate that I(z) spectroscopy can be quantitatively compared with Density Functional Theory calculations and can be used to assess the nature of the interaction between graphene and substrate. This method can expand the capabilities of standard STM systems to study graphene/substrate complexes, complementing standard topographic probing with spectroscopic information.
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Submitted 28 April, 2023; v1 submitted 27 April, 2023;
originally announced April 2023.
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Strain release at the graphene-Ni(100) interface investigated by in-situ and operando scanning tunnelling microscopy
Authors:
Zhiyu Zou,
Laerte L. Patera,
Giovanni Comelli,
Cristina Africh
Abstract:
Interface strain can significantly influence the mechanical, electronic and magnetic properties of low-dimensional materials. Here we investigated by scanning tunneling microscopy how the stress introduced by a mismatched interface affects the structure of a growing graphene (Gr) layer on a Ni(100) surface in real time during the process. Strain release appears to be the main factor governing morp…
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Interface strain can significantly influence the mechanical, electronic and magnetic properties of low-dimensional materials. Here we investigated by scanning tunneling microscopy how the stress introduced by a mismatched interface affects the structure of a growing graphene (Gr) layer on a Ni(100) surface in real time during the process. Strain release appears to be the main factor governing morphology, with the interplay of two simultaneous driving forces: on the one side the need to obtain two-dimensional best registry with the substrate, via formation of moiré patterns, on the other side the requirement of optimal one-dimensional in-plane matching with the transforming nickel carbide layer, achieved by local rotation of the growing Gr flake. Our work suggests the possibility of tuning the local properties of two-dimensional films at the nanoscale through exploitation of strain at a one-dimensional interface.
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Submitted 19 October, 2020; v1 submitted 8 October, 2020;
originally announced October 2020.
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"Inside Out" Growth Method for High-Quality Nitrogen-Doped Graphene
Authors:
Sara Fiori,
Daniele Perilli,
Mirco Panighel,
Cinzia Cepek,
Aldo Ugolotti,
Alessandro Sala,
Hongsheng Liu,
Giovanni Comelli,
Cristiana Di Valentin,
Cristina Africh
Abstract:
High-quality nitrogen-doped graphene on nickel is prepared by exploiting both the catalytic properties of nickel and the solubility of nitrogen atoms into its bulk. Following the standard chemical vapor deposition procedure, a previously nitrogen-doped nickel substrate is exposed to carbon-containing precursors so that nitrogen atoms, segregating to the surface, remain trapped in the growing graph…
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High-quality nitrogen-doped graphene on nickel is prepared by exploiting both the catalytic properties of nickel and the solubility of nitrogen atoms into its bulk. Following the standard chemical vapor deposition procedure, a previously nitrogen-doped nickel substrate is exposed to carbon-containing precursors so that nitrogen atoms, segregating to the surface, remain trapped in the growing graphene network. Morphological and chemical characterization by scanning tunneling microscopy and X-ray photoelectron spectroscopy demonstrates that the process yields a flat, wide, continuous nitrogen-doped graphene layer. Experimental results are combined with a thorough density functional theory investigation of possible structural models, to obtain a clear description at the atomic scale of the various configurations of the nitrogen atoms observed in the graphene mesh. This growth method is potentially scalable and suitable for the production of high-performance nano-devices with well-defined nitrogen centers, to be exploited as metal-free carbon-based catalysts in several applicative fields such as electrochemistry, energy storage, gas storage/sensing or wastewater treatment.
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Submitted 3 October, 2020; v1 submitted 21 September, 2020;
originally announced September 2020.
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Molecular anchoring stabilizes low valence Ni(I)TPP on copper against thermally induced chemical changes
Authors:
Henning Maximilian Sturmeit,
Iulia Cojocariu,
Matteo Jugovac,
Albano Cossaro,
Alberto Verdini,
Luca Floreano,
Alessandro Sala,
Giovanni Comelli,
Stefania Moro,
Matus Stredansky,
Manuel Corva,
Erik Vesselli,
Peter Puschnig,
Claus Michael Schneider,
Vitaliy Feyer,
Giovanni Zamborlini,
Mirko Cinchetti
Abstract:
Many applications of molecular layers deposited on metal surfaces, ranging from single-atom catalysis to on-surface magnetochemistry and biosensing, rely on the use of thermal cycles to regenerate the pristine properties of the system. Thus, understanding the microscopic origin behind the thermal stability of organic/metal interfaces is fundamental for engineering reliable organic-based devices. H…
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Many applications of molecular layers deposited on metal surfaces, ranging from single-atom catalysis to on-surface magnetochemistry and biosensing, rely on the use of thermal cycles to regenerate the pristine properties of the system. Thus, understanding the microscopic origin behind the thermal stability of organic/metal interfaces is fundamental for engineering reliable organic-based devices. Here, we study nickel porphyrin molecules on a copper surface as an archetypal system containing a metal center whose oxidation state can be controlled through the interaction with the metal substrate. We demonstrate that the strong molecule-surface interaction, followed by charge transfer at the interface, plays a fundamental role in the thermal stability of the layer by rigidly anchoring the porphyrin to the substrate. Upon thermal treatment, the molecules undergo an irreversible transition at 420 K, which is associated with an increase of the charge transfer from the substrate, mostly localized on the phenyl substituents, and a downward tilting of the latters without any chemical modification
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Submitted 18 June, 2020;
originally announced June 2020.
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Operando atomic-scale study of graphene CVD growth at steps of polycrystalline nickel
Authors:
Zhiyu Zou,
Virginia Carnevali,
Laerte L. Patera,
Matteo Jugovac,
Cinzia Cepek,
Maria Peressi,
Giovanni Comelli,
Cristina Africh
Abstract:
An operando investigation of graphene growth on (100) grains of polycrystalline nickel (Ni) surfaces was performed by means of variable-temperature scanning tunneling microscopy complemented by density functional theory simulations. A clear description of the atomistic mechanisms ruling the graphene expansion process at the stepped regions of the substrate is provided, showing that different route…
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An operando investigation of graphene growth on (100) grains of polycrystalline nickel (Ni) surfaces was performed by means of variable-temperature scanning tunneling microscopy complemented by density functional theory simulations. A clear description of the atomistic mechanisms ruling the graphene expansion process at the stepped regions of the substrate is provided, showing that different routes can be followed, depending on the height of the steps to be crossed. When a growing graphene flake reaches a monoatomic step, it extends jointly with the underlying Ni layer; for higher Ni edges, a different process, involving step retraction and graphene landing, becomes active. At step bunches, the latter mechanism leads to a peculiar 'staircase formation' behavior, where terraces of equal width form under the overgrowing graphene, driven by a balance in the energy cost between C-Ni bond formation and stress accumulation in the carbon layer. Our results represent a step towards bridging the material gap in searching new strategies and methods for the optimization of chemical vapor deposition graphene production on polycrystalline metal surfaces.
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Submitted 24 January, 2020; v1 submitted 21 January, 2020;
originally announced January 2020.
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The new FAST module: a portable and transparent add-on module for time-resolved investigations with commercial scanning probe microscopes
Authors:
Carlo Dri,
Mirco Panighel,
Daniel Tiemann,
Laerte L. Patera,
Giulia Troiano,
Yves Fukamori,
Fabian Knoller,
Barbara A. J. Lechner,
Giuseppe Cautero,
Dario Giuressi,
Giovanni Comelli,
Jordi Fraxedas,
Cristina Africh,
Friedrich Esch
Abstract:
Time resolution is one of the most severe limitations of scanning probe microscopies (SPMs), since the typical image acquisition times are in the order of several seconds or even few minutes. As a consequence, the characterization of dynamical processes occurring at surfaces (e.g. surface diffusion, film growth, self-assembly and chemical reactions) cannot be thoroughly addressed by conventional S…
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Time resolution is one of the most severe limitations of scanning probe microscopies (SPMs), since the typical image acquisition times are in the order of several seconds or even few minutes. As a consequence, the characterization of dynamical processes occurring at surfaces (e.g. surface diffusion, film growth, self-assembly and chemical reactions) cannot be thoroughly addressed by conventional SPMs. To overcome this limitation, several years ago we developed a first prototype of the FAST module, an add-on instrument capable of driving a commercial scanning tunneling microscope (STM) at and beyond video rate frequencies. Here we report on a fully redesigned version of the FAST module, featuring improved performance and user experience, which can be used both with STMs and atomic force microscopes (AFMs), and offers additional capabilities such as an atom tracking mode. All the new features of the FAST module, including portability between different commercial instruments, are described in detail and practically demonstrated.
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Submitted 21 June, 2019; v1 submitted 20 June, 2019;
originally announced June 2019.
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The order-disorder character of the (3x3) to (sqrt3 x sqrt3)R30° phase transition of Sn on Ge(111)
Authors:
L. Petaccia,
L. Floreano,
A. Goldoni,
D. Cvetko,
A. Morgante,
L. Grill,
A. Verdini,
G. Comelli,
G. Paolucci,
S. Modesti
Abstract:
Growing attention has been drawn in the past years to the α-phase
(1/3 monolayer) of Sn on Ge(111), which undergoes a transition from the low temperature (3x3) phase to the room temperature (\sqrt3 x \sqrt3)R30° one. On the basis of scanning tunnelling microscopy experiments, this transition was claimed to be the manifestation of a surface charge density wave (SCDW), i.e. a periodic redist…
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Growing attention has been drawn in the past years to the α-phase
(1/3 monolayer) of Sn on Ge(111), which undergoes a transition from the low temperature (3x3) phase to the room temperature (\sqrt3 x \sqrt3)R30° one. On the basis of scanning tunnelling microscopy experiments, this transition was claimed to be the manifestation of a surface charge density wave (SCDW), i.e. a periodic redistribution of charge, possibly accompanied by a periodic lattice distortion, which determines a change of the surface symmetry.
Recent He diffraction studies of the (3x3) long range order have shown the transition to be of the order-disorder type with a critical temperature Tc=220 K and belonging to the 3-state Potts' universality class. These findings clearly exclude an SCDW driven mechanism at 220 K, but they cannot exclude the occurence of a displacive transition at higher temperature. Here we present photoelectron diffraction data taken at 300 K and photoemission data taken up to 500 K (which is the maximum temperature where the (\sqrt3 x \sqrt3)R30° is stable) . From our analysis it is shown that the atomic structure of the Sn overlayer does not change throughout the transition up to 500 K. As a consequence the displacive hypothesis must be discarded in favour of a genuine order-disorder model.
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Submitted 19 October, 2001; v1 submitted 16 March, 2001;
originally announced March 2001.
