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Defects Evolution and Mg Segregation in Mg-implanted GaN with Ultra-High-Pressure Annealing
Authors:
Y. Wang,
K. Huynh,
M. E. Liao,
J. Tweedie,
P. Reddy,
M. H. Breckenridge,
R. Collazo,
Z. Sitar,
M. Bockowski,
X. Huang,
M. Wojcik,
M. S. Goorsky
Abstract:
Annealing Mg-implanted homoepitaxial GaN at temperatures at or above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects in the form of inversion domains contain electrically inactive Mg after post-implantation annealing at temperatures as high as 1300 °C (one GPa N2 overpressure), which results in a low dopant activation effic…
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Annealing Mg-implanted homoepitaxial GaN at temperatures at or above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects in the form of inversion domains contain electrically inactive Mg after post-implantation annealing at temperatures as high as 1300 °C (one GPa N2 overpressure), which results in a low dopant activation efficiency. Triple axis X-ray data show that the implant-induced strain is fully relieved after annealing at 1300 °C for 10 min, indicating that the strain-inducing point defects formed during implantation have reconfigured. However, annealing at temperatures of 1400 °C to 1500 °C (also one GPa N2 overpressure) eliminates the presence of the inversion domains. Annealing at these higher temperatures and for a longer time does not have any further impact on the strain state. While residual defects, such as dislocation loops, still exist after annealing at and above 1400 °C, chemical analysis at the dislocation loops shows no sign of Mg segregation. Meanwhile, an overall decreasing trend in the dislocation loop size and density is observed after annealing at higher temperatures and longer times. Earlier work [1] addressing electrical measurements of these types of samples showed that annealing at 1400 °C leads to a dopant activation efficiency that is an order of magnitude higher than that observed at 1300 °C. This work complements the earlier work by identifying the microscopic defects (inversion domains) which incorporate Mg, and points to the benefits, in terms of defect density and p-type dopant activation, of using higher temperatures annealing cycles to activate Mg in GaN.
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Submitted 21 April, 2022;
originally announced April 2022.
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Properties of an N Time-Slice Dynamic Chain Event Graph
Authors:
Rodrigo A. Collazo,
Jim Q. Smith
Abstract:
A Dynamic Chain Event Graph (DCEG) provides a rich tree-based framework for modelling a dynamic process with highly asymmetric developments. An N Time-Slice DCEG (NT-DCEG) is a useful subclass of the DCEG class that exhibits a specific type of periodicity in its supporting tree graph and embodies a time-homogeneity assumption. Here some desired properties of an NT-DCEG is explored. In particular,…
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A Dynamic Chain Event Graph (DCEG) provides a rich tree-based framework for modelling a dynamic process with highly asymmetric developments. An N Time-Slice DCEG (NT-DCEG) is a useful subclass of the DCEG class that exhibits a specific type of periodicity in its supporting tree graph and embodies a time-homogeneity assumption. Here some desired properties of an NT-DCEG is explored. In particular, we prove that the class of NT-DCEGs contains all discrete N time-slice Dynamic Bayesian Networks as special cases. We also develop a method to distributively construct an NT-DCEG model. By exploiting the topology of an NT-DCEG graph, we show how to construct intrinsic random variables which exhibit context-specific independences that can then be checked by domain experts. We also show how an NT-DCEG can be used to depict various structural and Granger causal hypotheses about a given process. Our methods are illustrated throughout using examples of dynamic multivariate processes describing inmate radicalisation in a prison.
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Submitted 22 October, 2018;
originally announced October 2018.
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An N Time-Slice Dynamic Chain Event Graph
Authors:
Rodrigo A. Collazo,
Jim Q. Smith
Abstract:
The Dynamic Chain Event Graph (DCEG) is able to depict many classes of discrete random processes exhibiting asymmetries in their developments and context-specific conditional probabilities structures. However, paradoxically, this very generality has so far frustrated its wide application. So in this paper we develop an object-oriented method to fully analyse a particularly useful and feasibly impl…
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The Dynamic Chain Event Graph (DCEG) is able to depict many classes of discrete random processes exhibiting asymmetries in their developments and context-specific conditional probabilities structures. However, paradoxically, this very generality has so far frustrated its wide application. So in this paper we develop an object-oriented method to fully analyse a particularly useful and feasibly implementable new subclass of these graphical models called the N Time-Slice DCEG (NT-DCEG). After demonstrating a close relationship between an NT-DCEG and a specific class of Markov processes, we discuss how graphical modellers can exploit this connection to gain a deep understanding of their processes. We also show how to read from the topology of this graph context-specific independence statements that can then be checked by domain experts. Our methods are illustrated throughout using examples of dynamic multivariate processes describing inmate radicalisation in a prison.
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Submitted 29 November, 2018; v1 submitted 16 August, 2018;
originally announced August 2018.
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Structure of Native Two-dimensional Oxides on III--Nitride Surfaces
Authors:
J. Houston Dycus,
Kelsey J. Mirrielees,
Everett D. Grimley,
Ronny Kirste,
Seiji Mita,
Zlatko Sitar,
Ramon Collazo,
Douglas L. Irving,
James M. LeBeau
Abstract:
When pristine material surfaces are exposed to air, highly reactive broken bonds can promote the formation of surface oxides with structures and properties differing greatly from bulk. Determination of the oxide structure, however, is often elusive through the use of indirect diffraction methods or techniques that probe only the outer most layer. As a result, surface oxides forming on widely used…
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When pristine material surfaces are exposed to air, highly reactive broken bonds can promote the formation of surface oxides with structures and properties differing greatly from bulk. Determination of the oxide structure, however, is often elusive through the use of indirect diffraction methods or techniques that probe only the outer most layer. As a result, surface oxides forming on widely used materials, such as group III-nitrides, have not been unambiguously resolved, even though critical properties can depend sensitively on their presence. In this work, aberration corrected scanning transmission electron microscopy reveals directly, and with depth dependence, the structure of native two--dimensional oxides that form on AlN and GaN surfaces. Through atomic resolution imaging and spectroscopy, we show that the oxide layers are comprised of tetrahedra--octahedra cation--oxygen units, similar to bulk $θ$--Al$_2$O$_3$ and $β$--Ga$_2$O$_3$. By applying density functional theory, we show that the observed structures are more stable than previously proposed surface oxide models. We place the impact of these observations in the context of key III-nitride growth, device issues, and the recent discovery of two-dimnesional nitrides.
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Submitted 13 August, 2017;
originally announced August 2017.
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Probing collective oscillation of $d$-orbital electrons at the nanoscale
Authors:
Rohan Dhall,
Derek Vigil-Fowler,
J. Houston Dycus,
Ronny Kirste,
Seiji Mita,
Zlatko Sitar,
Ramon Collazo,
James M. LeBeau
Abstract:
Here we demonstrate that high energy electrons can be used to explore the collective oscillation of $s$, $p$, and $d$ orbital electrons at the nanometer length scale. Using epitaxial AlGaN/AlN quantum wells as a test system, we observe the emergence of additional features in the loss spectrum with increasing Ga content. A comparison of the observed spectra with ab--initio theory reveals the origin…
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Here we demonstrate that high energy electrons can be used to explore the collective oscillation of $s$, $p$, and $d$ orbital electrons at the nanometer length scale. Using epitaxial AlGaN/AlN quantum wells as a test system, we observe the emergence of additional features in the loss spectrum with increasing Ga content. A comparison of the observed spectra with ab--initio theory reveals the origin of these spectral features is attributed to 3$d$--electrons contributed by Ga. We find that these modes differ in energy from the valence electron plasmons in Al$_{1-x}$Ga$_x$N due to the different polarizability of the $d$ electrons. Finally, we study the dependence of observed plasmon modes on Ga content, lending insight into plasmon coupling with electron--hole excitations.
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Submitted 12 August, 2017;
originally announced August 2017.
