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Understanding Creep Suppression Mechanism in Polymer Nanocomposites through Machine Learning
Authors:
Entao Yang,
James F. Pressly,
Bharath Natarajan,
Robert Colby,
Karen I. Winey,
Robert A. Riggleman
Abstract:
While recent efforts have shown how local structure plays an essential role in the dynamic heterogeneity of homogeneous glass-forming materials, systems containing interfaces such as thin films or composite materials remain poorly understood. It is known that interfaces perturb the molecular packing nearby, however, numerous studies show the dynamics are modified over a much larger range. Here, we…
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While recent efforts have shown how local structure plays an essential role in the dynamic heterogeneity of homogeneous glass-forming materials, systems containing interfaces such as thin films or composite materials remain poorly understood. It is known that interfaces perturb the molecular packing nearby, however, numerous studies show the dynamics are modified over a much larger range. Here, we examine the dynamics in polymer nanocomposites (PNCs) using a combination of simulations and experiments and quantitatively separate the role of polymer packing from other effects on the dynamics, as a function of distance from the nanoparticle surfaces. After showing good qualitative agreement between the simulations and experiments in glassy structure and creep compliance, we use a recently developed machine learning technique to decompose polymer dynamics in our simulated PNCs into structure-dependent and structure-independent processes. With this decomposition, the free energy barrier for polymer rearrangement can be described as a combination of packing-dependent and packing-independent barriers. We find both barriers are higher near nanoparticles and decrease with applied stress, quantitatively demonstrating that the slow interfacial dynamics is not solely due to polymer packing differences, but also the change of structure-dynamics relationships. Finally, we present how this decomposition can be used to accurately predict strain-time creep curves for PNCs from their static configuration, providing additional insights into the effects of polymer-nanoparticle interfaces on creep suppression in PNCs.
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Submitted 25 April, 2022;
originally announced April 2022.
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Simulation of Heterogeneous Atom Probe Tip Shapes Evolution during Field Evaporation Using a Level Set Method and Different Evaporation Models
Authors:
Zhijie Xu,
Dongsheng Li,
Wei Xu,
Arun Devaraj,
Robert Colby,
Suntharampillai Thevuthasan,
B. P. Geiser,
D. J. Larson
Abstract:
In atom probe tomography (APT), accurate reconstruction of the spatial positions of field evaporated ions from measured detector patterns depends upon a correct understanding of the dynamic tip shape evolution and evaporation laws of component atoms. Artifacts in APT reconstructions of heterogeneous materials can be attributed to the assumption of homogeneous evaporation of all the elements in the…
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In atom probe tomography (APT), accurate reconstruction of the spatial positions of field evaporated ions from measured detector patterns depends upon a correct understanding of the dynamic tip shape evolution and evaporation laws of component atoms. Artifacts in APT reconstructions of heterogeneous materials can be attributed to the assumption of homogeneous evaporation of all the elements in the material in addition to the assumption of a steady state hemispherical dynamic tip shape evolution. A level set method based specimen shape evolution model is developed in this study to simulate the evaporation of synthetic layered-structured APT tips. The simulation results of the shape evolution by the level set model qualitatively agree with the finite element method and the literature data using the finite difference method. The asymmetric evolving shape predicted by the level set model demonstrates the complex evaporation behavior of heterogeneous tip and the interface curvature can potentially lead to the artifacts in the APT reconstruction of such materials. Compared with other APT simulation methods, the new method provides smoother interface representation with the aid of the intrinsic sub-grid accuracy. Two evaporation models (linear and exponential evaporation laws) are implemented in the level set simulations and the effect of evaporation laws on the tip shape evolution is also presented.
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Submitted 30 August, 2018;
originally announced August 2018.
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Electroactuation with Single Charge Carrier Ionomers
Authors:
Alpha A. Lee,
Ralph H. Colby,
Alexei A. Kornyshev
Abstract:
A simple theory of electromechanical transduction for single-charge-carrier double-layer electroactuators is developed, in which the ion distribution and curvature are mutually coupled. The obtained expressions for the dependence of curvature and charge accumulation on the applied voltage, as well as the electroactuation dynamics, are compared with literature data. The mechanical- or sensor- perfo…
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A simple theory of electromechanical transduction for single-charge-carrier double-layer electroactuators is developed, in which the ion distribution and curvature are mutually coupled. The obtained expressions for the dependence of curvature and charge accumulation on the applied voltage, as well as the electroactuation dynamics, are compared with literature data. The mechanical- or sensor- performance of such electroactuators appears to be determined by just three cumulative parameters, with all of their constituents measurable, permitting a scaling approach to their design.
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Submitted 10 December, 2012;
originally announced December 2012.
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Cation nonstoichiometry and its impact on nucleation, structure and defect formation in complex oxide heteroepitaxy : LaCrO3 on SrTiO3(001)
Authors:
L. Qiao,
K. H. L. Zhang,
M. E. Bowden,
V. Shutthanandan,
R. Colby,
Y. Du,
B. Kabius,
P. V. Sushko,
S. A. Chambers
Abstract:
Our ability to design and fabricate electronic devices with reproducible properties using complex oxides is critically dependent on our ability to controllably synthesize these materials in thin-film form. Structure-property relationships are intimately tied to film and interface composition. Here we report on the effects of cation stoichiometry in LaCrO3 heteroepitaxial films prepared using molec…
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Our ability to design and fabricate electronic devices with reproducible properties using complex oxides is critically dependent on our ability to controllably synthesize these materials in thin-film form. Structure-property relationships are intimately tied to film and interface composition. Here we report on the effects of cation stoichiometry in LaCrO3 heteroepitaxial films prepared using molecular beam epitaxy. We show that LaCrO3 films grow pseudomorphically on SrTiO3(001) over a wide range of La-to-Cr atom ratios. However, the growth mode and structural quality are sensitive to the La-to-Cr ratio, with La-rich films being of considerably lower structural quality than Cr-rich films. Cation mixing occurs at the interface for all La-to-Cr ratios investigated, and is not quenched by deposition at ambient temperature. Indiffused La atoms occupy Sr sites in the substrate. The presence of defects in the SrTiO3 substrate is implicated in promoting La indiffusion by comparing the properties of LaCrO3/SrTiO3 with those of LaCrO3/Si, both prepared at ambient temperature. Additionally, pulsed laser deposition is shown to result in more extensive interfacial mixing than molecular beam epitaxy for deposition at ambient temperature on Si.
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Submitted 12 November, 2012;
originally announced November 2012.
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First Experimental Demonstration of Gate-all-around III-V MOSFET by Top-down Approach
Authors:
Jiangjiang Gu,
Yiqun Liu,
Yanqing Wu,
Robert Colby,
Roy G. Gordon,
Peide D. Ye
Abstract:
The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In0.53Ga0.47As channel and atomic-layer-deposited (ALD) Al2O3/WN gate stacks by a top-down approach. A well-controlled InGaAs nanowire release process and a novel ALD high-k/metal gate process has been developed to enable the fabrication of III-V GAA MOSFETs. Well-behaved on-state and…
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The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In0.53Ga0.47As channel and atomic-layer-deposited (ALD) Al2O3/WN gate stacks by a top-down approach. A well-controlled InGaAs nanowire release process and a novel ALD high-k/metal gate process has been developed to enable the fabrication of III-V GAA MOSFETs. Well-behaved on-state and off-state performance has been achieved with channel length (Lch) down to 50nm. A detailed scaling metrics study (S.S., DIBL, VT) with Lch of 50nm - 110nm and fin width (WFin) of 30nm - 50nm are carried out, showing the immunity to short channel effects with the advanced 3D structure. The GAA structure has provided a viable path towards ultimate scaling of III-V MOSFETs.
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Submitted 15 December, 2011;
originally announced December 2011.
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Amorphous interface layer in thin graphite films grown on the carbon face of SiC
Authors:
R. Colby,
M. L. Bolen,
M. A. Capano,
E. A. Stach
Abstract:
Cross-sectional transmission electron microscopy (TEM) is used to characterize an amorphous layer observed at the interface in graphite and graphene films grown via thermal decomposition of C-face 4H-SiC. The amorphous layer does not to cover the entire interface, but uniform contiguous regions span microns of cross-sectional interface. Annular dark field scanning transmission electron microscopy…
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Cross-sectional transmission electron microscopy (TEM) is used to characterize an amorphous layer observed at the interface in graphite and graphene films grown via thermal decomposition of C-face 4H-SiC. The amorphous layer does not to cover the entire interface, but uniform contiguous regions span microns of cross-sectional interface. Annular dark field scanning transmission electron microscopy (ADF-STEM) images and electron energy loss spectroscopy (EELS) demonstrate that the amorphous layer is a carbon-rich composition of Si/C. The amorphous layer is clearly observed in samples grown at 1600°C for a range of growth pressures in argon, but not at 1500°C, suggesting a temperature-dependent formation mechanism.
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Submitted 10 May, 2011;
originally announced May 2011.
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Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition
Authors:
Qingkai Yu,
Luis A. Jauregui,
Wei Wu,
Robert Colby,
Jifa Tian,
Zhihua Su,
Helin Cao,
Zhihong Liu,
Deepak Pandey,
Dongguang Wei,
Ting Fung Chung,
Peng Peng,
Nathan Guisinger,
Eric A. Stach,
Jiming Bao,
Shin-shem Pei,
Yong P. Chen
Abstract:
The strong interest in graphene has motivated the scalable production of high quality graphene and graphene devices. Since large-scale graphene films synthesized to date are typically polycrystalline, it is important to characterize and control grain boundaries, generally believed to degrade graphene quality. Here we study single-crystal graphene grains synthesized by ambient CVD on polycrystallin…
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The strong interest in graphene has motivated the scalable production of high quality graphene and graphene devices. Since large-scale graphene films synthesized to date are typically polycrystalline, it is important to characterize and control grain boundaries, generally believed to degrade graphene quality. Here we study single-crystal graphene grains synthesized by ambient CVD on polycrystalline Cu, and show how individual boundaries between coalescing grains affect graphene's electronic properties. The graphene grains show no definite epitaxial relationship with the Cu substrate, and can cross Cu grain boundaries. The edges of these grains are found to be predominantly parallel to zigzag directions. We show that grain boundaries give a significant Raman "D" peak, impede electrical transport, and induce prominent weak localization indicative of intervalley scattering in graphene. Finally, we demonstrate an approach using pre-patterned growth seeds to control graphene nucleation, opening a route towards scalable fabrication of single-crystal graphene devices without grain boundaries.
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Submitted 21 March, 2011; v1 submitted 21 November, 2010;
originally announced November 2010.
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Large-scale Graphitic Thin Films Synthesized on Ni and Transferred to Insulators: Structural and Electronic Properties
Authors:
Helin Cao,
Qingkai Yu,
Robert Colby,
Deepak Pandey,
C. S. Park,
Jie Lian,
Dmitry Zemlyanov,
Isaac Childres,
Vladimir Drachev,
Eric A. Stach,
Muhammad Hussain,
Hao Li,
Steven S. Pei,
Yong P. Chen
Abstract:
We present a comprehensive study of the structural and electronic properties of ultrathin films containing graphene layers synthesized by chemical vapor deposition (CVD) based surface segregation on polycrystalline Ni foils then transferred onto insulating SiO2/Si substrates. Films of size up to several mm's have been synthesized. Structural characterizations by atomic force microscopy (AFM), sc…
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We present a comprehensive study of the structural and electronic properties of ultrathin films containing graphene layers synthesized by chemical vapor deposition (CVD) based surface segregation on polycrystalline Ni foils then transferred onto insulating SiO2/Si substrates. Films of size up to several mm's have been synthesized. Structural characterizations by atomic force microscopy (AFM), scanning tunneling microscopy (STM), cross-sectional transmission electron microscopy (XTEM) and Raman spectroscopy confirm that such large scale graphitic thin films (GTF) contain both thick graphite regions and thin regions of few layer graphene. The films also contain many wrinkles, with sharply-bent tips and dislocations revealed by XTEM, yielding insights on the growth and buckling processes of the GTF. Measurements on mm-scale back-gated transistor devices fabricated from the transferred GTF show ambipolar field effect with resistance modulation ~50% and carrier mobilities reaching ~2000 cm^2/Vs. We also demonstrate quantum transport of carriers with phase coherence length over 0.2 $μ$m from the observation of 2D weak localization in low temperature magneto-transport measurements. Our results show that despite the non-uniformity and surface roughness, such large-scale, flexible thin films can have electronic properties promising for device applications.
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Submitted 23 February, 2010; v1 submitted 9 January, 2009;
originally announced January 2009.
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Enhanced cooperativity below the caging temperature of o-terphenyl
Authors:
B. M. Erwin,
S. Y. Kamath,
R H. Colby
Abstract:
The utility of a cooperative length scale for describing the dynamics of glass-forming liquids is shown using literature data on o-terphenyl. Molecular dynamics and Monte Carlo simulations reveal a distribution of cooperative fractal events below the caging temperature T_A. Guided by these results, we show how to extract the size of slow regions in any glass-forming liquid from probe rotation/di…
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The utility of a cooperative length scale for describing the dynamics of glass-forming liquids is shown using literature data on o-terphenyl. Molecular dynamics and Monte Carlo simulations reveal a distribution of cooperative fractal events below the caging temperature T_A. Guided by these results, we show how to extract the size of slow regions in any glass-forming liquid from probe rotation/diffusion measurements, which agrees quantitatively with 4-D NMR and grows steadily as temperature is lowered below T_A. We clarify why this length must also be the size of the largest cooperative events.
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Submitted 1 March, 2005;
originally announced March 2005.
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Enhanced Elasticity and Soft Glassy Rheology of a Smectic in a Random Porous Environment
Authors:
Ran**i Bandyopadhyay,
Dennis Liang,
Ralph H. Colby,
James L. Harden,
Robert L. Leheny
Abstract:
We report studies of the frequency dependent shear modulus, $G^*(ω)=G'(ω)+iG''(ω)$, of the liquid crystal octylcyanobiphenyl (8CB) confined in a colloidal aerosil gel. With the onset of smectic order, $G'$ grows approximately linearly with decreasing temperature, reaching values that exceed by more than three orders of magnitude the values for pure 8CB. The modulus at low temperatures possesses…
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We report studies of the frequency dependent shear modulus, $G^*(ω)=G'(ω)+iG''(ω)$, of the liquid crystal octylcyanobiphenyl (8CB) confined in a colloidal aerosil gel. With the onset of smectic order, $G'$ grows approximately linearly with decreasing temperature, reaching values that exceed by more than three orders of magnitude the values for pure 8CB. The modulus at low temperatures possesses a power-law component, $G^*(ω) \sim ω^α$, with exponent $α$ that approaches zero with increasing gel density. The amplitude of $G'$ and its variation with temperature and gel density indicate that the low temperature response is dominated by a dense population of defects in the smectic. In contrast, when the 8CB is isotropic or nematic, the modulus is controlled by the elastic behavior of the colloidal gel.
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Submitted 18 February, 2005;
originally announced February 2005.
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Enhanced cooperativity below the caging temperature of glass-forming liquids
Authors:
B. M. Erwin,
R. H. Colby,
S. Y. Kamath,
S. K. Kumar
Abstract:
The utility of a cooperative length scale for describing the dynamics of small molecule glass-formers is shown. Molecular Dynamics and Monte Carlo simulations reveal a distribution of cooperatively moving fractal events below the temperature Ta at which dynamics become caged. Guided by these results, four straightforward methods emerge to recognize Ta in experimental data and quantify the length…
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The utility of a cooperative length scale for describing the dynamics of small molecule glass-formers is shown. Molecular Dynamics and Monte Carlo simulations reveal a distribution of cooperatively moving fractal events below the temperature Ta at which dynamics become caged. Guided by these results, four straightforward methods emerge to recognize Ta in experimental data and quantify the length scale that grows on cooling below Ta. This length scale is consistent with 4-D NMR experiments which are sensitive to the slow moving population.
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Submitted 30 September, 2004;
originally announced September 2004.
