Anisotropic positive linear and sub-linear magnetoresistivity in the cubic type-II Dirac metal Pd$_3$In$_7$
Authors:
Aikaterini Flessa Savvidou,
Andrzej Ptok,
G. Sharma,
Brian Casas,
Judith K. Clark,
Victoria M. Li,
Michael Shatruk,
Sumanta Tewari,
Luis Balicas
Abstract:
We report a transport study on Pd$_3$In$_7$ which displays multiple Dirac type-II nodes in its electronic dispersion. Pd$_3$In$_7$ is characterized by low residual resistivities and high mobilities, which are consistent with Dirac-like quasiparticles. For an applied magnetic field $(μ_{\text{0}} H)$ having a non-zero component along the electrical current, we find a large, positive, and linear in…
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We report a transport study on Pd$_3$In$_7$ which displays multiple Dirac type-II nodes in its electronic dispersion. Pd$_3$In$_7$ is characterized by low residual resistivities and high mobilities, which are consistent with Dirac-like quasiparticles. For an applied magnetic field $(μ_{\text{0}} H)$ having a non-zero component along the electrical current, we find a large, positive, and linear in $μ_{\text{0}} H$ longitudinal magnetoresistivity (LMR). The sign of the LMR and its linear dependence deviate from the behavior reported for the chiral-anomaly-driven LMR in Weyl semimetals. Interestingly, such anomalous LMR is consistent with predictions for the role of the anomaly in type-II Weyl semimetals. In contrast, the transverse or conventional magnetoresistivity (CMR for electric fields $\textbf{E} \bot μ_{\text{0}} \textbf{H}$) is large and positive, increasing by $10^3-10^4$ \% as a function of $μ_{\text{0}}H$ while following an anomalous, angle-dependent power law $ρ_{\text{xx}}\propto (μ_{\text{0}}H)^n$ with $n(θ) \leq 1$. The order of magnitude of the CMR, and its anomalous power-law, is explained in terms of uncompensated electron and hole-like Fermi surfaces characterized by anisotropic carrier scattering likely due to the lack of Lorentz invariance.
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Submitted 3 November, 2023;
originally announced November 2023.
Complex Dirac-like Electronic Structure in Atomic Site Ordered Rh3In3.4Ge3.6
Authors:
Aikaterini Flessa Savvidou,
Judith K. Clark,
Hua Wang,
Kaya Wei,
Eun Sang Choi,
Shirin Mozaffari,
Xiaofeng Qian,
Michael Shatruk,
Luis Balicas
Abstract:
We report the synthesis via an indium flux method of a novel single-crystalline compound Rh3In3.4Ge3.6 that belongs to the cubic Ir3Ge7 structure type. In Rh3In3.4Ge3.6, the In and Ge atoms choose to preferentially occupy, respectively, the 12d and 16f sites of the Im-3m space group, thus creating a colored version of the Ir3Ge7 structure. Like the other compounds of the Ir3Ge7 family, Rh3In3.4Ge3…
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We report the synthesis via an indium flux method of a novel single-crystalline compound Rh3In3.4Ge3.6 that belongs to the cubic Ir3Ge7 structure type. In Rh3In3.4Ge3.6, the In and Ge atoms choose to preferentially occupy, respectively, the 12d and 16f sites of the Im-3m space group, thus creating a colored version of the Ir3Ge7 structure. Like the other compounds of the Ir3Ge7 family, Rh3In3.4Ge3.6 shows potential as a thermoelectric displaying a relatively large power factor, PF ~ 2 mW/cmK2, at a temperature T ~ 225 K albeit showing a modest figure of merit, ZT = 8 x 10-4, due to the lack of a finite band gap. These figures might improve through a use of chemical substitution strategies to achieve band gap opening. Remarkably, electronic band structure calculations reveal that this compound displays a complex Dirac-like electronic structure relatively close to the Fermi level. The electronic structure is composed of several Dirac type-I and type-II nodes, and even Dirac type-III nodes that result from the touching between a flat band and a linearly dispersing band. This rich Dirac-like electronic dispersion offers the possibility to observe Dirac type-III nodes and study their role in the physical properties of Rh3In3.4Ge3.6 and related Ir3Ge7-type materials.
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Submitted 2 February, 2021;
originally announced February 2021.
