Comparison of 35 and 50 μm thin HPK UFSD after neutron irradiation up to 6*10^15 neq/cm^2
Authors:
Y. Zhao,
N. Cartiglia,
E. Estrada,
Z. Galloway,
C. Gee,
A. Goto,
Z. Luce,
S. M. Mazza,
F. McKinney-Martinez,
R. Rodriguez,
H. F. -W. Sadrozinski,
A. Seiden V. Cindro,
G. Kramberger,
I. Mandić,
M. Mikuž,
M. Zavrtanik
Abstract:
We report results from the testing of 35 μm thick Ultra-Fast Silicon Detectors (UFSD produced by Hamamatsu Photonics (HPK), Japan and the comparison of these new results to data reported before on 50 μm thick UFSD produced by HPK. The 35 μm thick sensors were irradiated with neutrons to fluences of 0, 1*10^14, 1*10^15, 3*10^15, 6*10^15 neq/cm^2. The sensors were tested pre-irradiation and post-irr…
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We report results from the testing of 35 μm thick Ultra-Fast Silicon Detectors (UFSD produced by Hamamatsu Photonics (HPK), Japan and the comparison of these new results to data reported before on 50 μm thick UFSD produced by HPK. The 35 μm thick sensors were irradiated with neutrons to fluences of 0, 1*10^14, 1*10^15, 3*10^15, 6*10^15 neq/cm^2. The sensors were tested pre-irradiation and post-irradiation with minimum ionizing particles (MIPs) from a 90Sr \b{eta}-source. The leakage current, capacitance, internal gain and the timing resolution were measured as a function of bias voltage at -20C and -27C. The timing resolution was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction method for both. Within the fluence range measured, the advantage of the 35 μm thick UFSD in timing accuracy, bias voltage and power can be established.
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Submitted 5 March, 2018;
originally announced March 2018.
