Transport effects of twist-angle disorder in mesoscopic twisted bilayer graphene
Authors:
Aleksander Sanjuan Ciepielewski,
Jakub Tworzydło,
Timo Hyart,
Alexander Lau
Abstract:
Magic-angle twisted bilayer graphene is a tunable material with remarkably flat energy bands near the Fermi level, leading to fascinating transport properties and correlated states at low temperatures. However, grown pristine samples of this material tend to break up into landscapes of twist-angle domains, strongly influencing the physical properties of each individual sample. This poses a signifi…
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Magic-angle twisted bilayer graphene is a tunable material with remarkably flat energy bands near the Fermi level, leading to fascinating transport properties and correlated states at low temperatures. However, grown pristine samples of this material tend to break up into landscapes of twist-angle domains, strongly influencing the physical properties of each individual sample. This poses a significant problem to the interpretation and comparison between measurements obtained from different samples. In this work, we study numerically the effects of twist-angle disorder on quantum electron transport in mesoscopic samples of magic-angle twisted bilayer graphene. We find a significant property of twist-angle disorder that distinguishes it from onsite-energy disorder: it leads to an asymmetric broadening of the energy-resolved conductance. The magnitude of the twist-angle variation has a strong effect on conductance, while the number of twist-angle domains is of much lesser significance. We further establish a relationship between the asymmetric broadening and the asymmetric density of states of twisted bilayer graphene at angles smaller than the first magic angle. Our results show that the qualitative differences between the types of disorder in the energy-resolved conductance of twisted bilayer graphene samples can be used to characterize them at temperatures above the critical temperatures of the correlated phases, enabling systematic experimental studies of the effects of the different types of disorders also on the other properties such as the competition of the different types of correlated states appearing at lower temperatures.
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Submitted 28 March, 2024;
originally announced March 2024.
Transport signatures of Van Hove singularities in mesoscopic twisted bilayer graphene
Authors:
Aleksander Sanjuan Ciepielewski,
Jakub Tworzydło,
Timo Hyart,
Alexander Lau
Abstract:
Magic-angle twisted bilayer graphene exhibits quasi-flat low-energy bands with Van Hove singularities close to the Fermi level. These singularities play an important role in the exotic phenomena observed in this material, such as superconductivity and magnetism, by amplifying electronic correlation effects. In this work, we study the correspondence of four-terminal conductance and the Fermi surfac…
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Magic-angle twisted bilayer graphene exhibits quasi-flat low-energy bands with Van Hove singularities close to the Fermi level. These singularities play an important role in the exotic phenomena observed in this material, such as superconductivity and magnetism, by amplifying electronic correlation effects. In this work, we study the correspondence of four-terminal conductance and the Fermi surface topology as a function of the twist angle, pressure, and energy in mesoscopic, ballistic samples of small-angle twisted bilayer graphene. We establish a correspondence between features in the wide-junction conductance and the presence of van Hove singularities in the density of states. Moreover, we identify additional transport features, such as a large, pressure-tunable minimal conductance, conductance peaks coinciding with non-singular band crossings, and unusually large conductance oscillations as a function of the system size. Our results suggest that twisted bilayer graphene close the magic angle is a unique system featuring simultaneously large conductance due to the quasi-flat bands, strong quantum nonlinearity due to the Van Hove singularities and high sensitivity to external parameters, which could be utilized in high-frequency device applications and sensitive detectors.
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Submitted 7 December, 2022; v1 submitted 17 August, 2022;
originally announced August 2022.
