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Visualising emergent phenomena at oxide interfaces
Authors:
Michael Oberaigner,
Manuel Ederer,
Sandeep Kumar Chaluvadi,
Pasquale Orgiani,
Regina Ciancio,
Stefan Löffler,
Gerald Kothleitner,
Daniel Knez
Abstract:
Knowledge of atomic-level details of structure, chemistry, and electronic states is paramount for a comprehensive understanding of emergent properties at oxide interfaces. We utilise a novel methodology based on atomic-scale electron energy loss spectroscopy (EELS) to spatially map the electronic states tied to the formation of a two-dimensional electron gas (2DEG) at the prototypical non-polar/po…
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Knowledge of atomic-level details of structure, chemistry, and electronic states is paramount for a comprehensive understanding of emergent properties at oxide interfaces. We utilise a novel methodology based on atomic-scale electron energy loss spectroscopy (EELS) to spatially map the electronic states tied to the formation of a two-dimensional electron gas (2DEG) at the prototypical non-polar/polar $TiO_2$/$LaAlO_3$ interface. Combined with differential phase contrast analysis we directly visualise the microscopic locations of ions and charge and find that 2DEG states and $Ti^{3+}$ defect states exhibit different spatial distributions. Supported by density functional theory (DFT) and inelastic scattering simulations we examine the role of oxygen vacancies in 2DEG formation. Our work presents a general pathway to directly image emergent phenomena at interfaces using this unique combination of arising microscopy techniques with machine learning assisted data analysis procedures.
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Submitted 5 October, 2023;
originally announced October 2023.
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Unveiling the electronic structure of pseudo-tetragonal WO$_3$ thin films
Authors:
F. Mazzola,
H. Hassani,
D. Amoroso,
S. K. Chaluvadi,
J. Fujii,
V. Polewczyk,
P. Rajak,
Max Koegler,
R. Ciancio,
B. Partoens,
G. Rossi,
I. Vobornik,
P. Ghosez,
P. Orgiani
Abstract:
WO$_3$ is a binary 5d compound which has attracted remarkable attention due to the vast array of structural transitions that it undergoes in its bulk form. In the bulk, a wide range of electronic properties has been demonstrated, including metal-insulator transitions and superconductivity upon do**. In this context, the synthesis of WO$_3$ thin films holds considerable promise for stabilizing ta…
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WO$_3$ is a binary 5d compound which has attracted remarkable attention due to the vast array of structural transitions that it undergoes in its bulk form. In the bulk, a wide range of electronic properties has been demonstrated, including metal-insulator transitions and superconductivity upon do**. In this context, the synthesis of WO$_3$ thin films holds considerable promise for stabilizing targeted electronic phase diagrams and embedding them in technological applications. However, to date, the electronic structure of WO$_3$ thin films is experimentally unexplored, and only characterized by numerical calculations. Underpinning such properties experimentally would be important to understand not only the collective behavior of electrons in this transition metal oxide, but also to explain and engineer both the observed optical responses to carriers' concentration and its prized catalytic activity. Here, by means of tensile strain, we stabilize WO$_3$ thin films into a stable phase, which we call pseudo-tetragonal, and we unveil its electronic structure by combining photoelectron spectroscopy and density functional theory calculations. This study constitutes the experimental demonstration of the electronic structure of WO$_3$ thin-films and allows us to pin down the first experimental benchmarks of the fermiology of this system.
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Submitted 20 April, 2023;
originally announced April 2023.
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Disentangling structural and electronic properties in V$_{2}$O$_{3}$ thin films: a genuine non-symmetry breaking Mott transition
Authors:
Federico Mazzola,
Sandeep Kumar Chaluvadi,
Vincent Polewczyk,
Debashis Mondal,
Jun Fujii,
Piu Rajak,
Mahabul Islam,
Regina Ciancio,
Luisa Barba,
Michele Fabrizio,
Giorgio Rossi,
Pasquale Orgiani,
Ivana Vobornik
Abstract:
Phase transitions are key in determining and controlling the quantum properties of correlated materials. Here, by using the powerful combination of precise material synthesis and angle resolved photoelectron spectroscopy, we show evidence for a genuine Mott transition undressed of any symmetry breaking side effects in the thin-films of V$_{2}$O$_{3}$. In particular, and in sharp contrast with the…
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Phase transitions are key in determining and controlling the quantum properties of correlated materials. Here, by using the powerful combination of precise material synthesis and angle resolved photoelectron spectroscopy, we show evidence for a genuine Mott transition undressed of any symmetry breaking side effects in the thin-films of V$_{2}$O$_{3}$. In particular, and in sharp contrast with the bulk V$_{2}$O$_{3}$ crystals, we unveil the purely electronic dynamics approaching the metal-insulator transition, disentangled from the structural transformation that is prevented by the residual substrate-induced strain. On approaching the transition, the spectral signal evolves surprisingly slowly over a wide temperature range, the Fermi wave-vector does not change, and the critical temperature appears to be much lower than the one reported for the bulk. Our findings are on one side fundamental in demonstrating the universal benchmarks of a genuine non-symmetry breaking Mott transition, extendable to a large array of correlated quantum systems and, on the other, given that the fatal structural breakdown is avoided, they hold promise of exploiting the metal-insulator transition by implementing V$_{2}$O$_{3}$ thin films in devices.
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Submitted 1 July, 2022;
originally announced July 2022.
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Metamorphic InAs/InGaAs QWs with electron mobilities exceeding $7\times10^5cm^2/Vs$
Authors:
A. Benali,
P. Rajak,
R. Ciancio,
J. R. Plaisier,
S. Heun,
G. Biasiol
Abstract:
We present a study on the influence of strain-relieving InAlAs buffer layers on metamorphic InAs/InGaAs quantum wells grown by molecular beam epitaxy on GaAs. Residual strain in the buffer layer, the InGaAs barrier and the InAs wells were assessed by X-ray diffraction and high-resolution transmission electron microscopy. By carefully choosing the composition profile and thicknesses of the buffer l…
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We present a study on the influence of strain-relieving InAlAs buffer layers on metamorphic InAs/InGaAs quantum wells grown by molecular beam epitaxy on GaAs. Residual strain in the buffer layer, the InGaAs barrier and the InAs wells were assessed by X-ray diffraction and high-resolution transmission electron microscopy. By carefully choosing the composition profile and thicknesses of the buffer layer, virtually unstrained InGaAs barriers embedding an InAs quantum well with thickness up to 7nm can be grown. This allows reaching low-temperature electron mobilities much higher than previously reported for samples obtained by metamorphic growth on GaAs, and comparable to the values achieved for samples grown on InP substrates.
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Submitted 23 June, 2022;
originally announced June 2022.
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All-optical spin injection in silicon revealed by element specific time-resolved Kerr effect
Authors:
Simone Laterza,
Antonio Caretta,
Richa Bhardwaj,
Roberto Flammini,
Paolo Moras,
MatteoJugovac,
Piu Rajak,
Mahabul Islam,
Regina Ciancio,
Valentina Bonanni,
Barbara Casarin,
Alberto Simoncig,
Marco Zangrando,
Primoz Rebernik Ribic,
Giuseppe Penco,
Giovanni De Ninno,
LucaGiannessi,
Alexander Demidovich,
Miltcho Danailov,
Fulvio Parmigiani,
Marco Malvestuto
Abstract:
Understanding how a spin current flows across metal-semiconductor interfaces at pico- and femtosecond timescales has implications for ultrafast spintronics, data processing and storage applications. However, the possibility to directly access the propagation of spin currents on such time scales has been hampered by the simultaneous lack of both ultrafast element specific magnetic sensitive probes…
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Understanding how a spin current flows across metal-semiconductor interfaces at pico- and femtosecond timescales has implications for ultrafast spintronics, data processing and storage applications. However, the possibility to directly access the propagation of spin currents on such time scales has been hampered by the simultaneous lack of both ultrafast element specific magnetic sensitive probes and tailored metal-semiconductor interfaces. Here, by means of free electron laser-based element sensitive Kerr spectroscopy, we report direct experimental evidence of spin currents across a Ni/Si interface in the form of different magnetodynamics at the Ni M2,3 and Si L2,3 absorption edges. This further allows us to calculate the propagation velocity of the spin current in silicon, which is on the order of 0.2 nm/fs.
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Submitted 4 October, 2021;
originally announced October 2021.
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Selective control of localised vs. delocalised carriers in anatase TiO2 through reaction with O2
Authors:
Chiara Bigi,
Zhenkun Tang,
Gian Marco Pierantozzi,
Pasquale Orgiani,
Pranab Kumar Das,
Jun Fujii,
Ivana Vobornik,
Tommaso Pincelli,
Alessandro Troglia,
Tien-Lin Lee,
Regina Ciancio,
Goran Dražic,
Alberto Verdini,
Anna Regoutz,
Phil D. C. King,
Deepnarayan Biswas,
Giorgio Rossi,
Giancarlo Panaccione,
Annabella Selloni
Abstract:
Two-dimensional (2D) metallic states induced by oxygen vacancies at oxide surfaces and interfaces provide new opportunities for the development of advanced applications, but the ability to control the behavior of these states is still limited. We used Angle Resolved Photoelectron Spectroscopy combined with density functional theory to study the reactivity of states induced by the oxygen vacancies…
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Two-dimensional (2D) metallic states induced by oxygen vacancies at oxide surfaces and interfaces provide new opportunities for the development of advanced applications, but the ability to control the behavior of these states is still limited. We used Angle Resolved Photoelectron Spectroscopy combined with density functional theory to study the reactivity of states induced by the oxygen vacancies at the (001)-(1x4) surface of anatase TiO2, where both 2D metallic and deeper lying in-gap states (IGs) are observed. Remarkably, the two states exhibit very different evolution when the surface is exposed to molecular O2: while IGs are almost completely quenched, the metallic states are only weakly affected. The energy scale analysis for the vacancy migration and recombination resulting from the DFT calculations confirms indeed that only the IGs originate from and remain localized at the surface, whereas the metallic states originate from subsurface vacancies, whose migration and recombination at the surface is energetically less favorable rendering them therefore insensitive to oxygen dosing.
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Submitted 8 October, 2019;
originally announced October 2019.
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Untwinned YBa$_2$Cu$_3$O$_{7-δ}$ thin films on MgO substrates: a platform to study strain effects on the local orders in cuprates
Authors:
Riccardo Arpaia,
Eric Andersson,
Alexei Kalaboukhov,
Elsebeth Schröder,
Edoardo Trabaldo,
Regina Ciancio,
Goran Dražić,
Pasquale Orgiani,
Thilo Bauch,
Floriana Lombardi
Abstract:
We have grown untwinned YBa$_2$Cu$_3$O$_{7-δ}$ (YBCO) films on (110) MgO substrates that were pre-annealed at high temperature in oxygen atmosphere. The annealing results in surface reconstruction with shallow facets, which induce the suppression of the YBCO twinning domains, and the preferential alignment of the CuO chains along one of the in-plane directions of the substrate. Because of the larg…
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We have grown untwinned YBa$_2$Cu$_3$O$_{7-δ}$ (YBCO) films on (110) MgO substrates that were pre-annealed at high temperature in oxygen atmosphere. The annealing results in surface reconstruction with shallow facets, which induce the suppression of the YBCO twinning domains, and the preferential alignment of the CuO chains along one of the in-plane directions of the substrate. Because of the large mismatch between the in-plane lattice parameters of film and substrate, the strain induced by the MgO into the YBCO layer is strong and very peculiar. The YBCO film is compressed, with respect to the bulk, and presents a unidirectional buckling of the atomic planes, along the chains' direction, due to a deformation of the copper-oxygen octahedra. The YBCO films, which can be grown with thicknesses down to few unit cells and oxygen do** levels spanning most of the superconducting dome, are patterned into nanowires with dimensions down to 50 nm. The anisotropies due to the untwinning state are preserved in these structures; moreover, additional anisotropies appear, in ultrathin structures where strain effects become more pronounced. Such untwinned and compressively strained films can therefore be used as a platform to study the interplay between strain and the various local orders in the normal state of YBCO.
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Submitted 29 October, 2019; v1 submitted 7 August, 2019;
originally announced August 2019.
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Transport properties of ultrathin YBa$_2$Cu$_3$O$_{7-δ}$ nanowires: a route to single photon detection
Authors:
Riccardo Arpaia,
Dmitri Golubev,
Reza Baghdadi,
Regina Ciancio,
Goran Dražić,
Pasquale Orgiani,
Domenico Montemurro,
Thilo Bauch,
Floriana Lombardi
Abstract:
We report on the growth and characterization of ultrathin YBa$_2$Cu$_3$O$_{7-δ}$ (YBCO) films on MgO (110) substrates, which exhibit superconducting properties at thicknesses down to 3 nm. YBCO nanowires, with thicknesses down to 10 nm and widths down to 65 nm, have been also successfully fabricated. The nanowires protected by a Au cap** layer show superconducting properties close to the as-grow…
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We report on the growth and characterization of ultrathin YBa$_2$Cu$_3$O$_{7-δ}$ (YBCO) films on MgO (110) substrates, which exhibit superconducting properties at thicknesses down to 3 nm. YBCO nanowires, with thicknesses down to 10 nm and widths down to 65 nm, have been also successfully fabricated. The nanowires protected by a Au cap** layer show superconducting properties close to the as-grown films, and critical current densities, which are only limited by vortex dynamics. The 10 nm thick YBCO nanowires without the Au cap** present hysteretic current voltage characteristics, characterized by a voltage switch which drives the nanowires directly from the superconducting to the normal state. Such bistability is associated in NbN nanowires to the presence of localized normal domains within the superconductor. The presence of the voltage switch, in ultrathin nanostructures characterized by high sheet resistance values, though preserving high quality superconducting properties, make our nanowires very attractive devices to engineer single photon detectors.
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Submitted 15 August, 2017;
originally announced August 2017.
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Multiple double-exchange mechanism by Mn$^{2+}$-do** in manganite compounds
Authors:
P. Orgiani,
A. Galdi,
C. Aruta,
V. Cataudella,
G. De Filippis,
C. A. Perroni,
V. Marigliano Ramaglia,
R. Ciancio,
N. B. Brookes,
M. Moretti Sala,
G. Ghiringhelli,
L. Maritato
Abstract:
Double-exchange mechanisms in RE$_{1-x}$AE$_{x}$MnO$_{3}$ manganites (where RE is a trivalent rare-earth ion and AE is a divalent alkali-earth ion) relies on the strong exchange interaction between two Mn$^{3+}$ and Mn$^{4+}$ ions through interfiling oxygen 2p states. Nevertheless, the role of RE and AE ions has ever been considered "silent" with respect to the DE conducting mechanisms. Here we sh…
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Double-exchange mechanisms in RE$_{1-x}$AE$_{x}$MnO$_{3}$ manganites (where RE is a trivalent rare-earth ion and AE is a divalent alkali-earth ion) relies on the strong exchange interaction between two Mn$^{3+}$ and Mn$^{4+}$ ions through interfiling oxygen 2p states. Nevertheless, the role of RE and AE ions has ever been considered "silent" with respect to the DE conducting mechanisms. Here we show that a new path for DE-mechanism is indeed possible by partially replacing the RE-AE elements by Mn$^{2+}$-ions, in La-deficient La$_{x}$MnO$_{3-δ}$ thin films. X-ray absorption spectroscopy demonstrated the relevant presence of Mn$^{2+}$ ions, which is unambiguously proved to be substituted at La-site by Resonant Inelastic X-ray Scattering. Mn$^{2+}$ is proved to be directly correlated to the enhanced magneto-transport properties because of an additional hop** mechanism trough interfiling Mn$^{2+}$-ions, theoretically confirmed by calculations within the effective single band model. The very idea to use Mn$^{2+}$ both as a do** element and an ions electronically involved in the conduction mechanism, has never been foreseen, revealing a new phenomena in transport properties of manganites. More important, such a strategy might be also pursed in other strongly correlated materials.
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Submitted 2 November, 2010; v1 submitted 30 June, 2010;
originally announced June 2010.
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Superconductivity in Sr2RuO4-Sr3Ru2O7 eutectic crystals
Authors:
R. Fittipaldi,
A. Vecchione,
R. Ciancio,
S. Pace,
M. Cuoco,
D. Stornaiuolo,
D. Born,
F. Tafuri,
E. Olsson,
S. Kittaka,
H. Yaguchi,
Y. Maeno
Abstract:
Superconducting behavior has been observed in the Sr2RuO4-Sr3Ru2O7 eutectic system as grown by the flux-feeding floating zone technique. A supercurrent flows across a single interface between Sr2RuO4 and Sr3Ru2O7 areas at distances that are far beyond those expected in a conventional proximity scenario. The current-voltage characteristics within the Sr3Ru2O7 macrodomain, as extracted from the eu…
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Superconducting behavior has been observed in the Sr2RuO4-Sr3Ru2O7 eutectic system as grown by the flux-feeding floating zone technique. A supercurrent flows across a single interface between Sr2RuO4 and Sr3Ru2O7 areas at distances that are far beyond those expected in a conventional proximity scenario. The current-voltage characteristics within the Sr3Ru2O7 macrodomain, as extracted from the eutectic, exhibit signatures of superconductivity in the bilayered ruthenate. Detailed microstructural, morphological and compositional analyses address issues on the concentration and the size of Sr2RuO4 inclusions within the Sr3Ru2O7 matrix. We speculate on the possibility of inhomogeneous superconductivity in the eutectic Sr3Ru2O7 and exotic pairing induced by the Sr2RuO4 inclusions.
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Submitted 11 December, 2007;
originally announced December 2007.
